A laser annealing device for perovskite photovoltaics and its use method

Abstract

The present application provides a laser annealing device for perovskite photovoltaic samples and a method for using the same. The laser annealing device includes: a visible light laser for laser ranging and laser annealing, a galvanometer for laser beam shaping, an infrared temperature sensor for temperature monitoring, a camera for monitoring the sample, a filter placed in front of the camera for filtering out the laser wavelength, a rack for placing the sample, a guide rail for moving in a horizontal plane, a motor for driving the guide rail, and a control circuit for controlling the movement or operation of components such as the laser, temperature detector, camera, and motor. During the laser annealing process, the temperature and color changes on the surface of the perovskite photovoltaic sample during the laser annealing process are monitored in real time by the temperature sensor and camera, so that the perovskite photovoltaic obtained by the laser annealing device of the present application has a higher photoelectric conversion efficiency than the existing annealing device.

Description

Technical Field

[0001] The present application relates to the technical field of photovoltaic material production, and in particular to a laser annealing device for perovskite photovoltaic samples and a method for using the same. Background Art

[0002] Annealing is a heat treatment process for materials. It involves heating the material to a certain temperature, holding it for a sufficient time, and then cooling it at an appropriate rate. Annealing can improve the material's crystallinity, reduce defect density, eliminate residual stress, and minimize deformation.

[0003] Photovoltaic materials are typically annealed at high temperatures. Annealing temperatures for silicon-based photovoltaics can reach several hundred degrees Celsius. However, perovskite materials are temperature-sensitive, and high temperatures can easily cause performance degradation and reduce photovoltaic efficiency. Therefore, the annealing temperature for perovskite photovoltaic devices generally does not exceed 150°C.

[0004] Laser annealing allows for the annealing of perovskite photovoltaic devices at lower temperatures. Compared to the commonly used high-temperature annealing process for perovskite photovoltaics, laser annealing operates at lower temperatures, for example, 40°C to 120°C, and in a shorter timeframe, from the traditional tens or even dozens of minutes to just tens of seconds. Therefore, laser annealing can effectively address the issues of high-temperature-induced perovskite material performance degradation and reduced photovoltaic efficiency, while also improving annealing efficiency.

[0005] However, existing laser annealing equipment mainly uses ultraviolet lasers and infrared lasers as working lasers. Ultraviolet lasers are generally used to process materials with larger band gaps. For example, the band gap of silicon carbide is about 3.4eV, corresponding to a spectral wavelength of 365nm. Therefore, an excimer laser with a wavelength of 308nm is commonly used as the working laser. Infrared lasers are generally used to process materials with smaller band gaps. For example, the band gap of single-crystal silicon is about 1.12eV, corresponding to a spectral wavelength of 1100nm. Therefore, an yttrium aluminum garnet (YAG) laser with a wavelength of 1064nm is commonly used as the working laser. The narrow band gap perovskite materials used in photovoltaics are generally about 1.8eV, corresponding to a spectral wavelength of about 700nm. When ultraviolet lasers are used for perovskite photovoltaic laser annealing, laser ablation occurs, causing the perovskite material to convert to an amorphous state. At the same time, because the perovskite layer has a larger thermal expansion coefficient, while the thermal expansion coefficient of the substrate layer is smaller, using infrared lasers for perovskite laser annealing can cause the perovskite layer to peel off from the substrate layer. Therefore, neither ultraviolet lasers nor infrared lasers are suitable for working lasers in perovskite photovoltaic laser annealing.

[0006] Furthermore, perovskite materials are sensitive to light, and the laser annealing time required for perovskite photovoltaic devices is very short. Under inappropriate laser irradiation, perovskite materials are prone to a variety of complex photophysical phenomena such as photodecomposition, photophase separation, photoion segregation, and photolattice expansion, resulting in the fabricated perovskite photovoltaic photoelectric conversion efficiency not reaching the ideal level.

[0007] In summary, how to ensure high photoelectric conversion efficiency while performing efficient laser annealing of perovskite photovoltaics is an important research topic in this field.

[0008] Application Contents

[0009] The purpose of this application is to provide a laser annealing device for perovskite photovoltaic samples and a method for using the same, so that the perovskite material undergoes annealing and recrystallization after absorbing laser energy, and ultimately can ensure high photoelectric conversion efficiency.

[0010] The present application provides a laser annealing device for perovskite photovoltaic samples and a method for using the same.

[0011] The laser annealing device for perovskite photovoltaics provided in this application includes the following components: a visible light laser (Laser) for laser ranging and laser annealing, a galvanometer (Lens) for laser beam shaping, an infrared temperature sensor (T-Sensor) for temperature monitoring, a camera (CCD) for monitoring samples, a filter (Filters) placed in front of the camera for filtering out laser wavelengths, a rack (Rack) for placing samples, a guide rail (Track) for moving in a horizontal plane, a motor (Motor) for driving the guide rail, and a control circuit for controlling the movement or operation of components such as the laser, temperature detector, camera, and motor.

[0012] The laser of the laser annealing device of the present application can emit laser light of a visible light wavelength used for laser annealing and ranging, and then the laser beam is shaped by the galvanometer placed in front of the laser.

[0013] Laser ranging or laser annealing can be accomplished by adjusting the laser's operating mode, and the laser power density irradiated onto the surface of the perovskite photovoltaic sample can be adjusted by adjusting the laser and / or galvanometer.

[0014] During the laser annealing process, the temperature of the surface of the perovskite photovoltaic sample is monitored in real time by a temperature sensor.

[0015] A filter is provided in front of the camera, which can filter out light of a specific wavelength, so that the camera can monitor the color change of the perovskite photovoltaic sample during the laser annealing process in real time.

[0016] In addition, the present application also provides a method for using an annealing device for a perovskite photovoltaic sample, the method for using the annealing device comprising the following steps:

[0017] S1: Place the perovskite photovoltaic sample to be processed on the rack.

[0018] S2: The laser of this application uses low-power, pulsed working mode; control the guide rail and motor to align the laser spot output by the laser with the perovskite photovoltaic surface to be processed near the white circle on the upper surface of the shelf corresponding to the non-adjustable support leg C (or D) of the shelf; measure the distance L1 between the laser output and the white circle corresponding to the shelf C (or D).

[0019] S3: By adjusting the laser and / or the galvanometer, the distance L1 can be changed. Changing the distance L1 can adjust the laser power density irradiated on the surface of the perovskite photovoltaic sample. When the distance L1 and the focal length L0 of the galvanometer are equal, the laser power density irradiated on the perovskite photovoltaic surface to be processed is the highest.

[0020] S4: Control the guide rail and the motor to align the laser spot output by the laser with the white circle on the upper surface of the rack corresponding to the adjustable leg A of the rack; measure the distance L2 between the laser output and the white circle corresponding to the rack A, and adjust the height of the leg A so that L1 = L2.

[0021] S5: Control the guide rail and the motor to align the laser spot output by the laser with the white circle on the upper surface of the rack corresponding to the adjustable leg B of the rack; measure the distance L3 between the laser output and the white circle corresponding to the rack B, and adjust the height of the leg A so that L1=L2=L3; this can ensure that the perovskite photovoltaic surface to be processed is parallel to the focal plane of the galvanometer, thereby ensuring that the laser power density of the perovskite photovoltaic surface to be processed is the same.

[0022] S6: The laser operates in high power mode.

[0023] S7: Read the temperature of the surface of the perovskite photovoltaic sample to be processed through a temperature sensor, and monitor the temperature change of the surface of the perovskite photovoltaic sample to be processed in real time.

[0024] S8: Check the color of the surface of the perovskite photovoltaic sample to be processed through the camera and display screen, and monitor the color changes of the surface of the perovskite photovoltaic sample to be processed in real time.

[0025] S9: Control the guide rails and motors to make the laser output laser spots successively irradiate the perovskite photovoltaic samples to complete the laser annealing of all samples; in this process, the scanning speed can be adjusted by controlling the guide rails and motors, thereby adjusting the effective time of the laser spot irradiating each position on the perovskite photovoltaic sample.

[0026] S10: Complete perovskite photovoltaic laser annealing; stop the laser output.

[0027] The laser annealing device for perovskite photovoltaics and the method for using the annealing device of the present application have the following advantages over existing laser annealing devices and methods for using the same:

[0028] 1. This application can ensure that the perovskite photovoltaic panel completes annealing at a lower temperature and at a faster speed, which can effectively avoid the performance degradation of the perovskite material caused by high temperature.

[0029] 2. Current photovoltaic panels often have bad pixels due to the use of high-temperature annealing. Bad pixels in photovoltaic panels are mainly caused by excessive material defect density at that location. During long-term use, the bad pixel location generates more heat, forming a "hot spot" in the photovoltaic panel, which can easily cause damage to the photovoltaic device. The laser annealed perovskite photovoltaic panel of this application can effectively reduce the defect density of the perovskite material, repair the bad pixels of the perovskite photovoltaic panel, and thus improve the uniformity of the perovskite photovoltaic panel; at the same time, it avoids the occurrence of "hot spots" during the use of the perovskite photovoltaic, can improve the stability of the perovskite photovoltaic, and extend the service life of the perovskite photovoltaic.

[0030] 3. The laser annealing device of the present application monitors the temperature and color changes of the surface of the perovskite photovoltaic sample in real time during the laser annealing process through a temperature sensor and a camera. The processed perovskite photovoltaic has a higher photoelectric conversion efficiency than the perovskite photovoltaic processed by the existing annealing device. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] In order to more clearly illustrate the embodiments of the present application or the technical solutions of the prior art, the following is a brief introduction to the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0032] Figure 1 is a side view of the laser annealing device architecture of a specific embodiment of the present application;

[0033] Figure 2 It is a top view of the laser annealing device architecture of a specific embodiment of the present application.

[0034] Figure 3 This is a first schematic diagram of adjusting the focal plane of the laser annealing device of the present application;

[0035] Figure 4 is a schematic diagram of the laser annealing device of the present application adjusting the laser power density on the sample surface;

[0036] Figure 5A second schematic diagram of adjusting the focal plane of the laser annealing device of the present application;

[0037] Figure 6 This is a third schematic diagram of adjusting the focal plane of the laser annealing device of the present application.

[0038] Reference numerals: 1. laser, 2. galvanometer, 3. temperature sensor, 4. camera, 5. filter, 6. rack, 7. guide rail, 8. motor, 9. tray. DETAILED DESCRIPTION

[0039] In order to enable those skilled in the art to better understand the present application, the present application is further described in detail below in conjunction with the accompanying drawings and specific embodiments. Obviously, the embodiments described are only a part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without making any creative efforts are within the scope of protection of the present application.

[0040] In order to achieve a shorter annealing and recrystallization time for the perovskite material after absorbing laser energy, and ultimately ensure the photoelectric conversion efficiency of the perovskite photovoltaic, the present application provides a laser annealing device for perovskite photovoltaic samples and a method for using the same.

[0041] like Figure 1-2 As shown, Figure 1 A side view of a laser annealing device for perovskite photovoltaics provided in this application, Figure 2 A top view of a laser annealing device for perovskite photovoltaics provided for this application. The laser annealing device for perovskite photovoltaics includes: a visible light laser 1 for laser ranging and laser annealing, a galvanometer 2 placed in front of the laser 1 for laser beam shaping, a temperature sensor 3 for temperature monitoring, a camera 4 for monitoring sample color changes, a filter 5 placed in front of the camera for filtering out interfering light waves, a rack 6 for placing samples, the rack 6 being placed below the laser 1, galvanometer 2, camera 4, and filter 5; a guide rail 7 for moving in a horizontal plane, a motor 8 for driving the guide rail, a control circuit (not shown in the figure) for controlling the movement of components such as the laser 1, galvanometer 2, camera 4, filter 5, and motor 8, or the operation of the entire machine. The control circuit is connected to the laser 1, galvanometer 2, temperature sensor 3, camera 4, and rack 6, respectively, to receive data information from the temperature sensor 3 and camera 4.

[0042] Furthermore, the laser 1 includes a ranging laser light source mode for detecting the distance of the light spot on the perovskite photovoltaic sample and an annealing laser light source mode for annealing the perovskite photovoltaic sample; the output laser wavelength range of the laser 1 covers the visible light 400nm~700nm, and one or more narrowband bands in the 400nm~700nm band can be selected as the laser light source.

[0043] In a preferred embodiment, the visible light laser output by the laser 1 is a narrow-band laser with a central wavelength of 532+ / -2 nm and a half-peak bandwidth of 5 nm to 10 nm.

[0044] In a preferred embodiment, the visible light laser output by the laser 1 has a central wavelength of 450+ / -2nm, 532+ / -2nm, 633+ / -2nm, and a multi-wavelength narrow-band laser with a half-peak bandwidth of 5nm to 10nm.

[0045] Furthermore, the laser power of the laser 1 is adjustable and can operate in multiple modes, including pulsed and continuous. In low-power, pulsed mode, it is used to detect the distance of the light spot on the perovskite photovoltaic sample with a detection accuracy of less than 1mm; high-power, continuous mode is used for laser annealing operations on perovskite photovoltaic samples.

[0046] Furthermore, the galvanometer 2 performs beam shaping on the output laser, and can adjust the beam into various shapes such as a dot shape, a line shape, a rectangle, etc. according to the requirements of annealing of the perovskite photovoltaic sample.

[0047] Furthermore, the laser 1 and galvanometer 2 can be raised and lowered vertically to ensure that the perovskite photovoltaic sample to be processed is near the focal length of the laser beam, at which point the laser power density is highest. By adjusting the vertical raising and lowering of the laser 1 and / or galvanometer 2, the laser power density irradiated on the surface of the perovskite photovoltaic sample can be adjusted to achieve different annealing effects.

[0048] Furthermore, the temperature sensor 3 can be a non-contact, high-precision infrared temperature sensor 3. Since the surface temperature of the perovskite photovoltaic sample is too high, it is easy to trigger thermal degradation of the perovskite material. If the surface temperature of the perovskite photovoltaic sample is too low, it is impossible to achieve the ideal annealing effect. Therefore, the temperature sensor 3 must be used to monitor the surface temperature of the perovskite photovoltaic sample in real time during the laser annealing process. The annealing temperature is 40 to 120 degrees Celsius.

[0049] Furthermore, the camera 4 is a color high-definition camera 4. Since the laser annealing time of the perovskite photovoltaic sample is very short, generally 5 to 100 seconds, the present application uses the camera 4 to monitor the color change of the perovskite photovoltaic sample during the laser annealing process in real time. At the same time, the unannealed perovskite photovoltaic sample is orange-yellow or brown-green, and the annealed perovskite photovoltaic sample is black. Monitoring the color change of the perovskite photovoltaic sample is one of the effective methods for monitoring laser annealing.

[0050] Furthermore, since laser annealing requires a relatively high laser power, and the perovskite material itself emits a strong red fluorescence under laser excitation, this will cause the intensity of light received by the camera 4 to exceed its normal operating range, resulting in a large area of ​​white or red noise on the monitoring screen, making it impossible to monitor the laser annealing process normally. The perovskite material is sensitive to light, and the laser annealing time requirement for the perovskite photovoltaic device is very short. If the annealing time exceeds the necessary annealing time, a variety of complex photophysical phenomena such as photodecomposition, photophase separation, photoion segregation, and photolattice expansion are very likely to occur, which reduces the photoelectric conversion efficiency of the perovskite photovoltaic device. In order to enable the camera 4 to normally monitor the color change of the perovskite photovoltaic sample during the laser annealing process, the filter 5 is placed between the camera 4 and the sample to filter out the fluorescence emitted by the working laser and the perovskite material under laser excitation. The wavelength of the fluorescence is in the 650nm to 750nm band, and the filter 5 at least filters out the fluorescence in this band.

[0051] Since the perovskite photovoltaic samples of the present application are generally orange-yellow or brown-green and are not in the 650nm-750nm band, when filtering out fluorescence, the filter 5 will not affect the accuracy of the camera 4 in monitoring the perovskite photovoltaic sample, that is, it will not filter out the light from the perovskite photovoltaic sample itself entering the camera 4. By filtering out fluorescence, the normal operation of the camera 4 can be effectively guaranteed. At the same time, after the perovskite photovoltaic sample turns black, the laser 1 will immediately stop outputting laser light, and no photophysical phenomenon that reduces the photoelectric conversion efficiency will occur.

[0052] Furthermore, the rack 6 may have four legs, A, B, C, and D. Legs C and D are fixed and cannot be adjusted, while legs A and B can be raised and lowered vertically. Adjusting legs A and B ensures that the perovskite photovoltaic sample to be processed is in the focal plane of the laser beam, with an adjustment accuracy of 1 mm. Legs A, B, C, and D are marked with white circles at the corresponding positions on the top surface of the rack 6 for alignment of the laser spot.

[0053] In an optional embodiment, a tray 9 is placed on the rack 6, and the perovskite photovoltaic sample to be processed is placed in the tray 9, so that the perovskite photovoltaic sample to be processed can be easily taken out of and placed into the laser annealing device.

[0054] Furthermore, the laser annealing device also includes a shell (not shown in the figure), which is used to protect the normal operation of the entire laser annealing device. At the same time, a sample entry and exit door is left on it to facilitate the removal or placement of the tray 9 containing the perovskite photovoltaic sample to be processed.

[0055] Furthermore, driven by the motor 8, the guide rail 7 can control the tray 9 on the rack 6 carrying the perovskite photovoltaic sample to be processed to move on the horizontal plane along the X and Y vertical directions within the focal plane of the laser beam, ensuring that laser annealing is completed at every position on the perovskite photovoltaic sample to be processed, thereby improving the annealing efficiency and achieving uniformity in the annealing processing of various parts of the sample.

[0056] Furthermore, the laser annealing device also includes a display, which is a touch screen display connected to the laser 1 and the motor 8, and completes corresponding operations by touching the display screen; at the same time, it is connected to the camera 4 and the temperature sensor 3 for real-time monitoring of the laser annealing process.

[0057] In addition, the present application also provides a method for using an annealing device for a perovskite photovoltaic sample, the method for using the annealing device comprising the following steps:

[0058] S1: Place the perovskite photovoltaic sample to be processed on the rack 6.

[0059] S2: Figure 3 This is the first schematic diagram of adjusting the focal plane of the laser annealing device of the present application. The laser 1 of the present application uses a low-power, pulsed working mode; the guide rail 7 and the motor 8 are controlled to align the laser spot output by the laser 1 with the perovskite photovoltaic surface to be processed near the white circle at the position on the upper surface of the rack 6 corresponding to the non-adjustable foot C (or D) of the rack 6; the distance L1 between the laser output and the white circle corresponding to the foot C (or D) of the rack 6 is measured.

[0060] S3: If Figure 4 As shown, Figure 4 Schematic diagram of the laser annealing apparatus of this application for adjusting the laser power density on the sample surface. By adjusting the height of the laser 1 and / or the galvanometer 2, the distance L1 can be changed. Changing the distance L1 can adjust the laser power density irradiated on the surface of the perovskite photovoltaic sample. When the distance L1 and the focal length L0 of the galvanometer 2 are equal, the laser power density irradiated on the perovskite photovoltaic surface to be processed is the highest.

[0061] S4: As Figure 5 As shown, Figure 5This is a second schematic diagram of adjusting the focal plane of the laser annealing apparatus of this application. Guide rail 7 and motor 8 are controlled to align the laser spot output by laser 1 with the white circle on the upper surface of rack 6, corresponding to the position of adjustable leg A of rack 6. The distance L2 between the laser output and the white circle corresponding to leg A of rack 6 is measured, and the height of leg A is adjusted so that L1 = L2.

[0062] S5: If Figure 6 As shown, Figure 6 This is a third schematic diagram illustrating adjusting the focal plane of the laser annealing apparatus of the present application. Guide rail 7 and motor 8 are controlled to align the laser spot output by laser 1 with the white circle on the upper surface of rack 6, corresponding to the position of adjustable leg B of rack 6. The distance L3 between the laser output and the white circle corresponding to leg B of rack 6 is measured, and the height of leg A is adjusted so that L1 = L2 = L3. This ensures that the perovskite photovoltaic surface to be processed is parallel to the focal plane of galvanometer 2, thereby ensuring that the laser power density on the perovskite photovoltaic surface to be processed is the same.

[0063] S6: Laser 1 uses high-power operation mode.

[0064] S7: Read the temperature of the surface of the perovskite photovoltaic sample to be processed through the temperature sensor 3, and monitor the temperature change of the surface of the perovskite photovoltaic sample to be processed in real time.

[0065] S8: View the color of the surface of the perovskite photovoltaic sample to be processed through the camera 4 and the display screen, and monitor the color change of the surface of the perovskite photovoltaic sample to be processed in real time.

[0066] S9: Control the guide rail 7 and the motor 8 so that the laser 1 outputs a laser spot to successively irradiate the perovskite photovoltaic samples to complete the laser annealing of all samples; during this process, the scanning speed can be adjusted by controlling the guide rail 7 and the motor 8, thereby adjusting the effective time of the laser spot irradiating each position on the perovskite photovoltaic sample.

[0067] S10: Complete the perovskite photovoltaic laser annealing; stop the laser 1 from outputting the laser.

[0068] In an optional embodiment, the laser annealing device further comprises a tray 9 and a housing, and step S1 comprises first placing the perovskite photovoltaic sample to be processed on the tray 9, then opening the door of the housing, and finally placing the tray 9 on the rack 6. Step S10 comprises, after stopping the laser 1 from outputting laser light, opening the door of the housing and removing the tray 9 and the perovskite photovoltaic sample to be processed.

[0069] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply the existence of any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that the process, method, article or device comprising a series of elements are inherent to the elements. In the absence of further restrictions, the elements defined by the sentence "comprise one..." do not exclude the presence of other identical elements in the process, method, article or device comprising the elements. In addition, the above-mentioned technical solutions provided in the embodiments of the present application are not described in detail in accordance with the corresponding technical solutions in the prior art to achieve the same principle, so as to avoid excessive elaboration.

[0070] Specific examples are used herein to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only intended to help understand the method and core ideas of the present application. It should be noted that, for those skilled in the art, without departing from the principles of the present application, various improvements and modifications may be made to the present application, as well as combinations of the various embodiments in the present application. Such improvements, modifications, and combinations also fall within the scope of protection of the claims of the present application.

Claims

1. A method for using a laser annealing device for perovskite photovoltaics, characterized in that: The steps include: S1: placing the perovskite photovoltaic sample to be processed on the rack (6); S2: The laser (1) is selected to work in low power and pulse mode; the guide rail (7) and the motor (8) are controlled to align the laser spot output by the laser (1) with the perovskite photovoltaic surface to be processed near the white circle on the upper surface of the rack (6) corresponding to the non-adjustable support C (or D) of the rack (6); the distance L1 between the laser output and the white circle corresponding to the rack (6) C (or D) is measured; S3: By adjusting the raising and lowering of the laser (1) and / or the galvanometer (2), the value of the distance L1 can be changed. By changing the value of the distance L1, the laser power density irradiated to the surface of the perovskite photovoltaic sample can be adjusted. When the distance L1 and the focal length L0 of the galvanometer (2) are equal, the laser power density irradiated to the surface of the perovskite photovoltaic to be processed is the largest. S4: By controlling the guide rail (7) and the motor (8), the laser spot output by the laser (1) is aligned with the white circle at the position on the upper surface of the rack (6) corresponding to the adjustable leg A of the rack (6); the distance L2 between the laser output and the white circle corresponding to the leg A of the rack (6) is measured, and the height of the leg A is adjusted so that L1=L2; S5: By controlling the guide rail (7) and the motor (8), the laser spot output by the laser (1) is aligned with the white circle at the position of the upper surface of the rack (6) corresponding to the adjustable leg B of the rack (6); the distance L3 between the laser output and the white circle corresponding to the rack (6) B is measured, and the height of the leg A is adjusted so that L1=L2=L3; this ensures that the perovskite photovoltaic surface to be processed is parallel to the focal plane of the galvanometer (2), thereby ensuring that the laser power density of the perovskite photovoltaic surface to be processed is the same; S6: Laser (1) uses high power and continuous operation mode; S7: reading the temperature of the surface of the perovskite photovoltaic sample to be processed through the temperature sensor (3), and monitoring the temperature change of the surface of the perovskite photovoltaic sample to be processed in real time; S8: Viewing the color of the surface of the perovskite photovoltaic sample to be processed through the camera (4) and the display screen, and monitoring the color change of the surface of the perovskite photovoltaic sample to be processed in real time; S9: by controlling the guide rail (7) and the motor (8), the laser (1) outputs a laser spot to irradiate the perovskite photovoltaic sample one by one, thereby completing the laser annealing of all samples; in this process, the scanning speed is adjusted by controlling the guide rail (7) and the motor (8), thereby adjusting the effective time of the laser spot irradiating each position on the perovskite photovoltaic sample; S10: Complete the perovskite photovoltaic laser annealing; stop the laser (1) from outputting laser light; The laser annealing device for perovskite photovoltaics comprises: a laser (1) emitting visible light for laser ranging and laser annealing, wherein the visible light laser output by the laser (1) has a central wavelength of 532±2 nm and a narrow-band laser with a half-peak bandwidth of 5 nm to 10 nm; a galvanometer (2) placed in front of the laser (1) for laser beam shaping; Temperature sensors for temperature monitoring (3); A camera (4) to monitor the color change of the sample; A filter (5) placed in front of the camera (4) for filtering out interfering light waves; A rack (6) for placing samples, wherein the rack (6) is placed below the laser (1), the galvanometer (2), the camera (4), and the filter (5); A guide rail (7) for movement in a horizontal plane; a motor (8) for driving the guide rail (7); Control circuit for the whole machine operation; The filter (5) at least filters out fluorescence with a wavelength in the range of 650nm-750nm.

2. The method for using the laser annealing device for perovskite photovoltaics according to claim 1, wherein: The laser annealing temperature is 40 to 120 degrees Celsius, and the laser annealing time is 5 to 100 seconds.

3. The method for using the laser annealing device for perovskite photovoltaics according to claim 1, wherein: The galvanometer (2) and / or the laser (1) can be raised and lowered in a vertical direction, and are used to adjust the shape, size and power density of the light spot irradiated onto the surface of the perovskite photovoltaic sample.

4. The method for using the laser annealing device for perovskite photovoltaics according to claim 1, wherein: The storage rack (6) has four legs, namely A, B, C, and D. Legs C and D are fixed and cannot be adjusted, while legs A and B can be raised and lowered in the vertical direction.

5. The method for using the laser annealing device for perovskite photovoltaics according to claim 1, wherein: The rack (6) comprises a guide rail (7) and a motor (8). Driven by the motor (8), the motor (8) cooperates with the guide rail (7) to control the perovskite photovoltaic sample to be processed on the rack (6) to move along two perpendicular directions, X and Y, within the focal plane of the laser beam.

6. The method for using the laser annealing device for perovskite photovoltaics according to claim 1, wherein: It also includes a tray, which is placed on the storage rack (6) and is used to place the perovskite photovoltaic sample to be processed.

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