A system-level double-sided fan-out packaging structure processing method using an aluminum substrate

Through the system-level double-sided fan-out packaging structure of aluminum substrate, the chip alignment, heat dissipation and warping problems in Fan-Out packages are solved by using selective anodization and anisotropic etching technology, and high-precision and low-cost packaging effects are achieved.

CN115547859BActive Publication Date: 2025-08-19SHANGHAI SPACEFLIGHT ELECTRONICS & COMM EQUIP RES INST
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Patent Information

Application Number
CN202211366827.5
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2022-11-01
Publication Date
2025-08-19
Estimated Expiration
2042-11-01

AI Technical Summary

Technical Problem

The prior art has problems such as chip bump alignment, heat dissipation and warping in Fan-Out packages, especially high I/O density and poor heat dissipation performance of high-performance chips, which leads to difficulties in packaging integration.

Method used

The system-level double-sided fan-out package is used to use aluminum substrates. Through selective anodization and anisotropic etching, an integrated structural and functional carrier plate is produced, including a thermally conductive metal aluminum layer, a vertical interconnecting column and a double-sided cavity, to achieve high-precision embedding and signal transmission of the chip.

Benefits of technology

It improves the accuracy, density and heat dissipation capabilities of the chip package, improves warping problems, enhances signal transmission integrity, and reduces costs.

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Abstract

The present invention provides a method for processing a system-level double-sided fan-out packaging structure using an aluminum substrate, comprising: using an aluminum alloy substrate as a bottom plate; making a double-sided cavity mask on the aluminum alloy substrate and performing a non-penetrating anodization on the substrate; making a structural and functional integrated carrier by selectively penetrating aluminum anodization and the anisotropic etching characteristics of anodized aluminum; mounting chips in the cavity of the structural and functional integrated carrier and wiring on the surface of the carrier; making a redistribution layer on the surface of the carrier; completely encapsulating one side of the carrier with epoxy plastic encapsulant and planting balls on the other side to form a system-level double-sided fan-out packaging structure. The method of the present invention uses an aluminum anodized structural and functional integrated carrier, has the characteristics of simple process flow, low cost, high precision of the anisotropic etching processing cavity, good thermal conductivity, etc., and can improve the precision, density, support strength, heat dissipation capacity and signal transmission integrity of the chip double-sided fan-out packaging.
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