Sensing device

Abstract

A sensing device includes a first substrate, a first sensing element, a first light-shielding layer, a second light-shielding layer, and an insulating layer. The first sensing element is located on the first substrate. The first light-shielding layer is located on the first sensing element and has a first opening, wherein the first opening completely overlaps the first sensing element. The second light-shielding layer is located on the first light-shielding layer and includes an upper light-shielding portion and a side light-shielding portion, wherein the upper light-shielding portion overlaps the first light-shielding layer and has a second opening, and the side light-shielding portion is separate from the upper light-shielding portion. The insulating layer is located between the first light-shielding layer and the second light-shielding layer, and the side light-shielding portion covers the sidewall of the insulating layer.

Description

Technical Field

[0001] This invention relates to an optoelectronic device, and more particularly to a sensing device. Background Technology

[0002] To provide the information needed to build a smart living environment, various sensors are widely used in daily life. For example, fingerprint sensors, due to their ability to recognize human fingerprints, are widely used for unlocking personal electronic products and for customs identification. By detecting the varying intensities of reflected light generated by the contours of a fingerprint, the sensing element can generate different amounts of current to obtain a fingerprint image for identification.

[0003] Since sensors can be paired with different light sources (such as visible light and infrared light) to perform various sensing operations, how to make the optomechanical structure of the sensor compatible with various light sources and integrate various sensors, so as to provide functions such as fingerprint recognition and vein anti-counterfeiting at the same time, remains one of the challenges that the industry urgently needs to overcome. Summary of the Invention

[0004] The purpose of this invention is to provide a sensing device with an improved optomechanical structure.

[0005] An embodiment of the present invention provides a sensing device, comprising: a first substrate; a first sensing element located on the first substrate; a first light-shielding layer located on the first sensing element and having a first opening, wherein the first opening completely overlaps the first sensing element; a second light-shielding layer located on the first light-shielding layer and including an upper light-shielding portion and a side light-shielding portion, wherein the upper light-shielding portion overlaps the first light-shielding layer and has a second opening, and the side light-shielding portion is separate from the upper light-shielding portion; and an insulating layer located between the first light-shielding layer and the second light-shielding layer, wherein the side light-shielding portion covers the sidewall of the insulating layer.

[0006] In one embodiment of the present invention, the aforementioned side light-shielding portion is electrically connected to the first light-shielding layer.

[0007] In one embodiment of the present invention, the angle between the aforementioned side light-shielding portion and the first light-shielding layer is 30 degrees to 85 degrees.

[0008] In one embodiment of the present invention, the second opening overlaps the first opening.

[0009] In one embodiment of the present invention, the second opening does not overlap with the first opening.

[0010] In one embodiment of the present invention, the aforementioned side light-shielding portion surrounds the upper light-shielding portion.

[0011] In one embodiment of the present invention, the sensing device further includes a light-emitting element located on the second light-shielding layer, wherein the first electrode of the light-emitting element is electrically connected to the upper light-shielding portion, and the second electrode of the light-emitting element is electrically connected to the side light-shielding portion.

[0012] In one embodiment of the present invention, the light-emitting element partially overlaps with the first sensing element.

[0013] In one embodiment of the present invention, the light-emitting element includes a first light-emitting element and a second light-emitting element, and the light wavelength range of the first light-emitting element is different from the light wavelength range of the second light-emitting element.

[0014] In one embodiment of the present invention, the sensing device further includes a second sensing element located between the first sensing element and the second light-shielding layer, and the first light-shielding layer is the first electrode of the second sensing element.

[0015] In one embodiment of the present invention, the above-mentioned upper light-shielding portion is electrically connected to the second electrode of the second sensing element.

[0016] In one embodiment of the present invention, the gap between the upper light-shielding portion and the side light-shielding portion overlaps the second sensing element.

[0017] In one embodiment of the present invention, the sensing device further includes a second substrate and a third sensing element, wherein the second substrate is located on the second light-shielding layer, and the third sensing element is located between the second substrate and the second light-shielding layer.

[0018] Another embodiment of the present invention provides a sensing device, comprising: a first substrate; a first sensing element located on the first substrate and including: a first electrode; a second electrode located on the first electrode; and a sensing layer located between the first electrode and the second electrode; a first light-shielding layer located on the first sensing element and having a first opening, wherein the first opening overlaps the first electrode, the sensing layer and the second electrode; a second light-shielding layer located on the first light-shielding layer and having a light-receiving area and a light-receiving edge adjacent to the light-receiving area; and an insulating layer located between the first light-shielding layer and the second light-shielding layer, wherein the ratio of the distance between the side of the first opening projected onto the second light-shielding layer furthest from the light-receiving edge and the light-receiving edge to the maximum distance between the second light-shielding layer and the sensing layer is 0.3 to 1.8.

[0019] In one embodiment of the present invention, the ratio of the light-receiving distance of the light-receiving area to the maximum distance between the second light-shielding layer and the sensing layer is greater than or equal to the ratio of the distance from the second light-shielding layer to the upper surface of the sensing device to the distance from the sensing layer to the upper surface of the sensing device.

[0020] In one embodiment of the present invention, the ratio of the light-receiving distance of the light-receiving area to the height difference between the upper surface of the first light-shielding layer and the first opening is greater than or equal to the ratio of the distance from the second light-shielding layer to the upper surface of the sensing device to the distance from the sensing layer to the upper surface of the sensing device.

[0021] In one embodiment of the present invention, the sensing device further includes a signal line, and the distance between the orthographic projection of the first opening on the upper surface of the first light-shielding layer and the end of the first light-shielding layer near the signal line is greater than or equal to the distance between the orthographic projection of the signal line on the first light-shielding layer and the first light-shielding layer.

[0022] In one embodiment of the present invention, the above-mentioned signal line is adjacent to the first light-shielding layer in the orthogonal projection of the first light-shielding layer.

[0023] In one embodiment of the present invention, the smaller of the distance between the orthographic projection of the signal line onto the first light-shielding layer and the distance between the orthographic projection of the signal line onto the second ... centers of adjacent first openings is less than or equal to half the distance between the centers of adjacent first openings.

[0024] In one embodiment of the present invention, the sensing device further includes a first sensing unit and a second sensing unit, wherein the first sensing unit includes a first sensing element, a first light-shielding layer and a second light-shielding layer, and the second sensing unit includes a first sensing element, a second light-shielding layer and a third light-shielding layer. The position of the third light-shielding layer in the second sensing unit relative to the first sensing element and the second light-shielding layer is the same as the position of the first light-shielding layer in the first sensing unit relative to the first sensing element and the second light-shielding layer, and the third light-shielding layer has no opening.

[0025] The beneficial effects of this invention are that the sensing device of this invention, through the optomechanical structure formed by the first and second light-shielding layers, can flexibly control the light-gathering angle and light-gathering amount of the sensing element, thereby effectively improving the signal-to-noise ratio of the sensing element. Furthermore, the sensing device of this invention can utilize the first and second light-shielding layers as signal lines for the light-emitting element, thereby simplifying the integration structure of the sensing element and the light-emitting element. In addition, the sensing device of this invention can flexibly determine the placement position of the light-emitting element, making the application fields of the sensing device wider.

[0026] To make the above features and advantages of the present invention more apparent and understandable, specific embodiments are described below in conjunction with the accompanying drawings. Attached Figure Description

[0027] Figure 1A This is a partial top view of a sensing device 10 according to an embodiment of the present invention.

[0028] Figure 1B It is along Figure 1AA schematic diagram of the cross section line A-A'.

[0029] Figure 2A This is a partial top view of a sensing device 20 according to an embodiment of the present invention.

[0030] Figure 2B It is along Figure 2A A schematic diagram of the cross section drawn by section line B-B'.

[0031] Figure 3 This is a partial top view of a sensing device 30 according to an embodiment of the present invention.

[0032] Figure 4 This is a partial top view of a sensing device 40 according to an embodiment of the present invention.

[0033] Figure 5 This is a partial cross-sectional schematic diagram of a sensing device 50 according to an embodiment of the present invention.

[0034] Figure 6A This is a partial top view of a sensing device 60 according to an embodiment of the present invention.

[0035] Figure 6B It is along Figure 6A A schematic diagram of the cross section line C-C'.

[0036] Figure 7 This is a partial cross-sectional schematic diagram of a sensing device 70 according to an embodiment of the present invention.

[0037] Figure 8A This is a partial top view of a sensing device 80 according to an embodiment of the present invention.

[0038] Figure 8B It is along Figure 8A A schematic diagram of the cross section line D-D'.

[0039] Figure 9A This is a partial top view of a sensing device 90 according to an embodiment of the present invention.

[0040] Figure 9B It is along Figure 9A A schematic diagram of the cross section drawn by section line E-E'.

[0041] Figure 10A This is a partial top view of a sensing device 100 according to an embodiment of the present invention.

[0042] Figure 10B It is along Figure 10A A schematic diagram of the cross section drawn by the section line F-F'.

[0043] Figure 10C yes Figure 10A The simulation diagram of the light collection distribution of the sensing device 100 at different light collection angle positions corresponding to different light incident angles.

[0044] Figure 11A This is a partial top view of a sensing device 100V according to an embodiment of the present invention.

[0045] Figure 11B It is along Figure 11A A schematic diagram of the cross section line G-G'.

[0046] Figure 11C yes Figure 11A The simulation diagram shows the light distribution of the 100V sensing device at different light-receiving angle positions corresponding to different light incident angles.

[0047] The attached figures are labeled as follows:

[0048] 10~90, 100, 100V: Sensing device

[0049] 110: First substrate

[0050] 120: First sensing element

[0051] 130: First light-shielding layer

[0052] 140, 240, 340, 440: Second light-shielding layer

[0053] 141,241,341,441: Upper light shielding part

[0054] 241a: Extension

[0055] 142,242,342,442: Side shading section

[0056] 150: Insulation layer

[0057] 620: Second sensing element

[0058] 810: Second substrate

[0059] 820: Third sensing element

[0060] A-A',B-B',C-C',D-D',E-E',F-F',G-G': Profile lines

[0061] B1, B2: Buffer layers

[0062] CV: Cover plate

[0063] D: Light receiving distance

[0064] D1: Minimum Spacing

[0065] D2: Maximum Spacing

[0066] D3, D6, D7: Spacing

[0067] D4, D5: Distance

[0068] E11, E12, E2, E21, E22: Electrodes

[0069] EA: First electrode

[0070] EB: Second electrode

[0071] EL: Light-emitting body

[0072] EP: Encapsulation layer

[0073] ET: Electron Transport Layer

[0074] FG: Finger

[0075] FR: Ridge

[0076] FV: Vegetarian

[0077] GP: gap

[0078] H: Height difference

[0079] HT: Hole Transport Layer

[0080] I1~I9: Insulation layer

[0081] L: Length

[0082] LD, LD1, LD2: Light-emitting elements

[0083] LR1~LR8: Beams

[0084] LS: Light Source

[0085] MA: Opaque area

[0086] ML, ML1, ML2: Microlens structures

[0087] O1: First opening

[0088] O2: Second opening

[0089] O3: Opening

[0090] OP: Open

[0091] P1, P2: Orthographic projection

[0092] P6, P7: Flattening layer

[0093] PT: Photosensitive layer

[0094] RA: Light receiving area

[0095] RE: Edge finishing

[0096] S: Width

[0097] SL, SL1, SL2, SL3: Signal lines

[0098] SR1, SR2: Sensing layer

[0099] SR min Minimum light collection range

[0100] SU, SU1~SU6, SUa, SUb, SUc, SUd: Sensing units

[0101] SW: Switching element

[0102] TA: Translucent Area

[0103] TR: Trench

[0104] UA: Corner

[0105] W1, W2, W3, W4: Sidewalls

[0106] θ: included angle Detailed Implementation

[0107] In the accompanying drawings, the thicknesses of layers, films, panels, regions, etc., are enlarged for clarity. Throughout the specification, the same reference numerals denote the same elements. It should be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "connected" to another element, it may be directly on or connected to the other element, or intermediate elements may also be present. Conversely, when an element is referred to as being "directly on" or "directly connected" to another element, no intermediate elements are present. As used herein, "connection" can refer to a physical and / or electrical connection. Furthermore, "electrical connection" or "coupling" may mean that other elements exist between the two elements.

[0108] It should be understood that although the terms “first,” “second,” “third,” etc., may be used herein to describe various elements, components, regions, layers, and / or parts, these elements, components, regions, layers, and / or parts should not be limited by these terms. These terms are used only to distinguish one element, component, region, layer, or part from another. Therefore, the first “element,” “component,” “region,” “layer,” or “part” discussed below may be referred to as a second element, component, region, layer, or part without departing from the teachings of this document.

[0109] The terminology used herein is for the purpose of describing particular embodiments only and is not restrictive. As used herein, unless the content clearly indicates otherwise, the singular forms “a,” “an,” and “the” are intended to include the plural forms, including “at least one” or denoteing “and / or.” As used herein, the term “and / or” includes any and all combinations of one or more of the associated listed items. It should also be understood that, when used in this specification, the terms “comprising” and / or “including” specify the presence of the stated features, areas, integrals, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, areas, integrals, steps, operations, elements, components, and / or combinations thereof.

[0110] Furthermore, relative terms such as “down” or “bottom” and “up” or “top” may be used herein to describe the relationship between one element and another, as illustrated in the figures. It should be understood that relative terms are intended to include different orientations of the device beyond those shown in the figures. For example, if a device in one figure is flipped, an element described as being “down” to other elements will be oriented “up” to other elements. Thus, the exemplary term “down” can include both “down” and “up” orientations, depending on the specific orientation of the figure. Similarly, if a device in one figure is flipped, an element described as being “down” or “below” to other elements will be oriented “above” to other elements. Thus, the exemplary terms “down” or “below” can include both “up” and “down” orientations.

[0111] Unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. It will be further understood that terms such as those defined in commonly used dictionaries should be interpreted as having meanings consistent with their meanings in the context of the relevant technology and this invention, and will not be interpreted as having idealized or overly formal meanings unless expressly defined herein.

[0112] This document describes exemplary embodiments with reference to cross-sectional views, which are schematic diagrams of idealized embodiments. Therefore, variations in shape as a result of, for example, manufacturing techniques and / or tolerances, are expected in the illustrations. Consequently, the embodiments described herein should not be construed as limited to the specific shapes of the regions shown herein, but rather include, for example, shape deviations caused by manufacturing processes. For example, regions shown or described as flat may generally have rough and / or non-linear characteristics. Furthermore, the acute angles shown may be rounded. Therefore, the regions shown in the figures are schematic in nature, and their shapes are not intended to show the precise shapes of the regions, nor are they intended to limit the scope of the claims.

[0113] Figure 1A This is a partial top view of a sensing device 10 according to an embodiment of the present invention. Figure 1B It is along Figure 1A A schematic cross-sectional view along section line A-A'. To make the accompanying drawing more concise, Figure 1A The first substrate 110, the first light-shielding layer 130 and the second light-shielding layer 140 are schematically shown, and other components and films are omitted.

[0114] Please refer to Figures 1A to 1B The sensing device 10 includes: a first substrate 110; a first sensing element 120 located on the first substrate 110; a first light-shielding layer 130 located on the first sensing element 120 and having a first opening O1, wherein the first opening O1 completely overlaps the first sensing element 120; a second light-shielding layer 140 located on the first light-shielding layer 130 and including an upper light-shielding portion 141 and a side light-shielding portion 142, wherein the upper light-shielding portion 141 overlaps the first light-shielding layer 130 and has a second opening O2, and the side light-shielding portion 142 is separated from the upper light-shielding portion 141; and an insulating layer 150 located between the first light-shielding layer 130 and the second light-shielding layer 140, wherein the side light-shielding portion 142 covers the sidewall W1 of the insulating layer 150.

[0115] In a sensing device 10 according to an embodiment of the present invention, the optomechanical structure formed by the first light-shielding layer 130 and the second light-shielding layer 140 can flexibly adjust the light-gathering angle, light-gathering range, and light-gathering amount of the first sensing element 120, and can also facilitate the subsequent setting of light-emitting elements and other sensing elements. Hereinafter, in conjunction with... Figures 1A to 1B The embodiments of the various components of the sensing device 10 will be described further, but the present invention is not limited thereto.

[0116] In this embodiment, the first substrate 110 can be a transparent substrate or an opaque substrate, and its material can be a ceramic substrate, a quartz substrate, a glass substrate, a polymer substrate, or other suitable materials, but is not limited thereto. Various film layers for forming the first sensing element 120, the first light-shielding layer 130, the second light-shielding layer 140, the insulating layer 150, and other signal lines, switching elements, storage capacitors, etc. can be disposed on the first substrate 110.

[0117] The first sensing element 120 may be a visible light sensing element, such as a fingerprint sensing element that senses visible light, but is not limited thereto. For example, the first sensing element 120 may include an electrode E11, a sensing layer SR1, and an electrode E12, wherein the electrode E11 may be located between the first substrate 110 and the sensing layer SR1, and the sensing layer SR1 may be located between the electrode E11 and the electrode E12. In some embodiments, the first sensing element 120 may be an invisible light sensing element, such as a fingerprint sensing element that senses infrared light (IR).

[0118] For example, electrode E11 can be made of molybdenum, aluminum, titanium, copper, gold, silver, or other conductive materials, or alloys or stacks of two or more of the above materials. Sensing layer SR1 can be made of silicon-rich oxide (SRO), germanium-doped silicon-rich oxide, organic photodiodes, or other suitable materials. Electrode E12 is preferably made of a transparent conductive material, such as indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, indium gallium zinc oxide, or other suitable oxides, or a stack of at least two of the above.

[0119] In some embodiments, the sensing device 10 may further include an insulating layer I3, which may be disposed between the electrode E11 of the first sensing element 120 and the sensing layer SR1 and the electrode E12. The material of the insulating layer I3 may include organic materials, such as acrylic, siloxane, polyimide, epoxy, or a stack of the above materials, but the present invention is not limited thereto.

[0120] In some embodiments, the sensing device 10 may further include a switching element SW located between the first sensing element 120 and the first substrate 110. The switching element SW may be electrically connected to the electrode E11 of the first sensing element 120 and the signal line SL. When the switching element SW is turned on, a signal from the signal line SL may be transmitted to the electrode E11 of the first sensing element 120. In some embodiments, the sensing device 10 may further include a buffer layer B1, which may be disposed between the switching element SW and the first substrate 110 to prevent impurities in the first substrate 110 from migrating into the switching element SW.

[0121] In some embodiments, the sensing device 10 may further include insulating layers I1 and I2, which may be disposed between the switching element SW and the electrode E11 of the first sensing element 120, and between the switching element SW and the signal line SL, to avoid unnecessary electrical connections. The materials of the insulating layers I1 and I2 may include transparent insulating materials, such as silicon oxide, silicon nitride, silicon oxynitride, a stack of the above materials, or other suitable materials, but the present invention is not limited thereto.

[0122] The first light-shielding layer 130 can be disposed on the first sensing element 120. The first light-shielding layer 130 has a first opening O1, and the orthographic projection of the first opening O1 onto the first substrate 110 can completely overlap the orthographic projection of the sensing layer SR1 onto the first substrate 110, thereby controlling the light-gathering range and light-gathering amount of the sensing layer SR1.

[0123] In some embodiments, the sensing device 10 may further include an insulating layer I4, which may be disposed between the electrode E12 of the first sensing element 120 and the first light-shielding layer 130 to avoid unnecessary electrical connections. The insulating layer I4 may be made of a transparent insulating material such as silicon oxide, silicon nitride, or silicon oxynitride.

[0124] In this embodiment, the upper light-shielding portion 141 and the side light-shielding portion 142 of the second light-shielding layer 140 can completely overlap the first light-shielding layer 130, but the present invention is not limited thereto. In other embodiments, the upper light-shielding portion 141 or the side light-shielding portion 142 can partially overlap the first light-shielding layer 130. For ease of subsequent explanation, the first sensing element 120, the first light-shielding layer 130 overlapping the first sensing element 120, and the upper light-shielding portion 141 and the side light-shielding portion 142 overlapping the first light-shielding layer 130 are referred to herein as a sensing unit SU.

[0125] In this embodiment, the orthographic projection of the first opening O1 of the first light-shielding layer 130 onto the first substrate 110 can completely overlap the orthographic projection of the second opening O2 of the light-shielding portion 141 onto the first substrate 110, so that the light-receiving range of the sensing layer SR1 mainly comes from directly above the first sensing element 120. However, the present invention is not limited to this. In other embodiments, the first opening O1 of the first light-shielding layer 130 may partially overlap or not overlap the second opening O2 of the light-shielding portion 141.

[0126] An insulating layer 150 may be sandwiched between the upper light-shielding portion 141 of the second light-shielding layer 140 and the first light-shielding layer 130. In this embodiment, the upper light-shielding portion 141 may be completely located on the insulating layer 150, but the present invention is not limited thereto. In other embodiments, the upper light-shielding portion 141 may also extend toward the first light-shielding layer 130, and the upper light-shielding portion 141 and the first light-shielding layer 130 remain electrically separated.

[0127] In this embodiment, the insulating layer 150 may have a trench TR, and the sidewalls W1 and W2 of the insulating layer 150 may be two opposing sidewalls constituting the trench TR. The side light-shielding portion 142 may be located on the side of the sidewall W1 and disposed along the sidewall W1, that is, the side light-shielding portion 142 may cover the sidewall W1. The upper light-shielding portion 141 may be located on the side of the sidewall W2, such that the side light-shielding portion 142 and the upper light-shielding portion 141 are kept separate by the trench TR. In some embodiments, the sensing device 10 may further include an insulating layer I5, and the insulating layer I5 may be disposed between the upper light-shielding portion 141 and the insulating layer 150 and between the side light-shielding portion 142 and the insulating layer 150.

[0128] In some embodiments, the trench TR of the insulating layer 150 can overlap the first light-shielding layer 130, and the side light-shielding portion 142 can extend along the sidewall W1 toward the first light-shielding layer 130 to block light from the side of the side light-shielding portion 142 away from the first sensing element 120, especially strong light from a distance. In addition, the first opening O1 of the first light-shielding layer 130 can also be used in conjunction with the gap GP between the side light-shielding portion 142 and the upper light-shielding portion 141 to adjust the light-receiving angle of the sensing layer SR1, so that another light-receiving range of the sensing layer SR1 can come from the upper left of the first sensing element 120.

[0129] In some embodiments, the side light-shielding portion 142 may be electrically connected to the first light-shielding layer 130. In some embodiments, the side light-shielding portion 142 may extend along the sidewall W1 to the first light-shielding layer 130, such that the side light-shielding portion 142 can be physically connected to the first light-shielding layer 130. In this way, when the first light-shielding layer 130 is electrically connected to the system voltage, the first light-shielding layer 130 can also serve as a signal line of the sensing device 10, such as a common electrode line or a power line, and the side light-shielding portion 142 can serve as a pad for electrical connection, such as a light-emitting element. Similarly, the upper light-shielding portion 141 can also be electrically connected to the system voltage and serve as a signal line or pad of the sensing device 10. In some embodiments, the angle θ between the side light-shielding portion 142 and the first light-shielding layer 130 may be 30 degrees to 85 degrees, for example, 40 degrees, 60 degrees, or 80 degrees.

[0130] For example, the materials of the first light-shielding layer 130 and the second light-shielding layer 140 may include conductive light-shielding materials, such as a stack of metal and metal oxide, metal nitride, black resin, or graphite, but are not limited thereto. In some embodiments, the material of the insulating layer 150 may include organic materials, such as acrylic, siloxane, polyimide, epoxy, or a stack of the above materials.

[0131] The following uses Figure 2A Further embodiments of the present invention will be described up to Figure 8, and will continue to be used... Figures 1A to 1B The component designations and related content of the embodiments are as follows: the same designations are used to represent the same or similar components, and descriptions of identical technical content are omitted. For explanations of the omitted parts, please refer to... Figures 1A to 1B The embodiments described below will not be repeated.

[0132] Figure 2A This is a partial top view of a sensing device 20 according to an embodiment of the present invention. Figure 2B It is along Figure 2AA cross-sectional view along section line B-B' is shown. In this embodiment, the sensing device 20 may include: a first substrate 110, a first sensing element 120, a first light-shielding layer 130, a second light-shielding layer 240, and an insulating layer 150. For the sake of brevity, the accompanying drawings are provided. Figure 2A The first light-shielding layer 130 was omitted.

[0133] With Figures 1A to 1B Compared to the sensing device 10 shown, Figures 2A to 2B The main difference of the sensing device 20 shown is that the side shading portion 242 of the second light-shielding layer 240 of the sensing device 20 has a U-shaped top view profile, and the sensing device 20 may also include a light-emitting element LD.

[0134] For example, please refer to Figure 2A In this embodiment, the second light-shielding layer 240 may include an upper light-shielding portion 241 and a side light-shielding portion 242, and the side light-shielding portion 242 may surround one end of the light-emitting element LD non-electrically connected to the upper light-shielding portion 241 on three sides, thus presenting a U-shaped outline.

[0135] Please refer to Figure 2B , Figure 2B The display sensing device 20 has two sensing units SU1 and SU2, and the two electrodes of the light-emitting element LD can be electrically connected to the upper light-shielding part 241 and the side light-shielding part 242, respectively. For example, in this embodiment, the light-emitting element LD may include a light-emitting body EL, a first electrode EA, and a second electrode EB, wherein the first electrode EA of the light-emitting element LD can be electrically connected to the upper light-shielding part 241 of the sensing unit SU1, and the second electrode EB of the light-emitting element LD can be electrically connected to the side light-shielding part 242 of the sensing unit SU2. In other words, the light-emitting element LD can be connected across the two sensing units.

[0136] In some embodiments, the first electrode EA of the light-emitting element LD can be electrically connected to the upper light-shielding portion 241 of the sensing unit SU1, and the second electrode EB of the light-emitting element LD can be electrically connected to the side light-shielding portion 242 of the sensing unit SU1. That is, in some cases, the light-emitting element LD can also be electrically connected to both the upper light-shielding portion 241 and the side light-shielding portion 242 of the same sensing unit SU1.

[0137] In some embodiments, the sensing device 20 may further include signal lines SL1 and SL2, which may be independently shared electrode lines, power lines, scan lines, or data lines. For example, the upper light-shielding portion 241 may be electrically connected to the signal line SL1, and the side light-shielding portion 242 may be electrically connected to the signal line SL2. In this way, the first electrode EA and the second electrode EB of the light-emitting element LD may be electrically connected to the signal lines SL1 and SL2 through the upper light-shielding portion 241 and the side light-shielding portion 242, respectively.

[0138] In this embodiment, the light-emitting element (LD) is disposed above the first sensing element 120, and the orthographic projection of the LD onto the first substrate 110 is outside the orthographic projection of the sensing layer SR1 of the first sensing element 120 onto the first substrate 110. In other words, the LD does not overlap the sensing layer SR1 of the first sensing element 120, so as not to affect the sensing layer SR1 from receiving light from directly above. In addition, since the LD, as a light source, is not disposed on the same film layer as the first sensing element 120, no space needs to be reserved between the first sensing elements 120 for the LD. Furthermore, since the LD is not disposed below the first sensing element 120, no opening area needs to be reserved between the first sensing elements 120 for the LD's optical path, thus increasing the density of the first sensing elements 120.

[0139] In this embodiment, the first electrode EA and the second electrode EB of the light-emitting element LD are disposed on the same side of the light-emitting body EL. In other words, the light-emitting element LD can be a horizontal micro-light-emitting diode, but is not limited thereto. In some embodiments, the light-emitting element LD can be a vertical micro-light-emitting diode. The light-emitting element LD can be fabricated on a growth substrate and then transferred onto a first substrate 110 by a mass transfer process. The first electrode EA can act as or be electrically connected to the anode of the light-emitting element LD, and the second electrode EB can act as or be electrically connected to the cathode of the light-emitting element LD. The light-emitting body EL can, for example, include a stack of doped and undoped semiconductor materials. The materials of the first electrode EA and the second electrode EB can include molybdenum, aluminum, titanium, copper, gold, silver or other conductive materials, or alloy combinations or stacked layers of two or more of the above materials, or other suitable materials.

[0140] The arrangement of the light-emitting elements (LDs) can depend on the amount of light required by the first sensing element 120. For example, in this embodiment, the LDs can be arrayed on the first substrate 110, and the LDs can emit visible light (e.g., red, green, or blue light) or invisible light (e.g., infrared light). When the LDs emit visible light, the first sensing element 120 can be a visible light sensing element, such as a fingerprint sensing element capable of sensing visible light. When the LDs emit invisible light, the first sensing element 120 can be an invisible light sensing element, such as a fingerprint sensing element capable of sensing infrared light. In some embodiments, the first sensing element 120 can be an organic photodiode.

[0141] In some embodiments, the sensing device 20 may further include a cover plate CV and an insulating layer I6, wherein the cover plate CV may be disposed on the light-emitting element LD, the insulating layer I6 may be located between the cover plate CV and the insulating layer 150, and the insulating layer I6 may be filled in the groove TR. When the finger FG approaches the cover plate CV, the light beam LR1 emitted by the light-emitting element LD may be reflected by the finger FG and enter the sensing layer SR1 of the first sensing element 120 through the second opening O2 and the first opening O1, and the light beam LR2 emitted by the light-emitting element LD may be reflected by the finger FG and enter the sensing layer SR1 of the first sensing element 120 through the gap GP and the first opening O1, so that the first sensing element 120 can mainly perform sensing by receiving the reflected light of the light beams LR1 and LR2 reflected by the finger FG. It is worth noting that since the side light-shielding portion 242 surrounds one end of the upper light-shielding portion 241 on three sides, the side light-shielding portion 242 can block the lateral light rays from the three sides away from the first sensing element 120 from the side light-shielding portion 142, especially strong light from a distance. This prevents the reflected light from the light beams LR1 and LR2 after being reflected by the finger FG from mixing with the strong light from a distance, thereby improving the signal-to-noise ratio of the first sensing element 120. In addition, the U-shaped contour of the gap GP can also adjust the light-receiving angle of the sensing layer SR1 for the reflected light of the light beam LR2 after being reflected by the finger FG to a specific angle on the three sides.

[0142] Figure 3 This is a partial top view schematic diagram of a sensing device 30 according to an embodiment of the present invention. The sensing device 30 may include: a first substrate 110, a second light-shielding layer 240, a light-emitting element LD, and signal lines SL1 and SL2. Figures 2A to 2B Compared to the sensing device 20 shown, Figure 3 The main difference of the sensing device 30 shown is that the light-emitting elements LD of the sensing device 30 can be arranged obliquely.

[0143] For example, in this embodiment, the sensing device 30 may include sensing units SUa to SUd, wherein a light-emitting element LD may be disposed between sensing units SUb and SUc, and one electrode of the light-emitting element LD may be electrically connected to the upper light-shielding portion 241 of sensing unit SUb, and the other electrode of the light-emitting element LD may be electrically connected to the side light-shielding portion 242 of sensing unit SUc. In this way, the light-emitting elements LD can be arranged in an oblique azimuth array on multiple sensing units according to the light-gathering angle and light-gathering amount required by the sensing elements, thereby increasing the flexibility of the arrangement of the light-emitting elements LD.

[0144] Figure 4This is a partial top view schematic diagram of a sensing device 40 according to an embodiment of the present invention. The sensing device 40 may include: a first substrate 110, a second light-shielding layer 240, a light-emitting element LD, and signal lines SL1 and SL2. Figures 2A to 2B Compared to the sensing device 20 shown, Figure 4 The main difference of the sensing device 40 shown is that the light-emitting element LD of the sensing device 40 can be connected across four sensing units.

[0145] For example, in this embodiment, the light-emitting element LD of the sensing device 40 can be connected across the sensing units SUa to SUd. One electrode of the light-emitting element LD can be electrically connected to the upper light-shielding portion 241 of sensing units SUa and SUb, and the other electrode of the light-emitting element LD can be electrically connected to the side light-shielding portion 242 of sensing units SUc and SUd. In this way, the light-emitting element LD can be arrayed across multiple sensing units in a manner that spans four sensing units, depending on the light-gathering angle and amount required by the sensing element. In some embodiments, the sensing device 40 can also be partially configured as follows: Figure 2A or Figure 3 The light-emitting elements (LDs) arranged in the manner shown provide different sensing effects in different areas.

[0146] Figure 5 This is a partial cross-sectional schematic diagram of a sensing device 50 according to an embodiment of the present invention. In this embodiment, the sensing device 50 may include: a first substrate 110, a first sensing element 120, a first light-shielding layer 130, a second light-shielding layer 240, an insulating layer 150, a light-emitting element LD, and a cover plate CV. Figures 2A to 2B Compared to the sensing device 20 shown, Figure 5 The main difference of the sensing device 50 shown is that the light-emitting element LD of the sensing device 50 can partially overlap the first sensing element 120.

[0147] For example, in this embodiment, the second opening O2 of the upper light-shielding portion 241 of the second light-shielding layer 240 can be laterally offset without overlapping the first opening O1 of the first light-shielding layer 130, allowing the light-emitting element LD to be offset to a position that partially overlaps the sensing layer SR1 of the first sensing element 120. This reduces the projected area of ​​the sensing unit SU and the light-emitting element LD on the first substrate 110, i.e., the area occupied by the sensing unit SU and the light-emitting element LD on the first substrate 110, allowing for a greater number of sensing units SU and light-emitting elements LD to be disposed on the first substrate 110, thereby improving sensing resolution. In this case, the light beam LR3 reflected by the finger FG and passing through the second opening O2 and the first opening O1 can still obliquely enter the sensing layer SR1 of the first sensing element 120.

[0148] In some embodiments, the gap GP between the upper light-shielding portion 241 and the side light-shielding portion 242 of the second light-shielding layer 240 can be further reduced, thereby further reducing the overall layout area of ​​the sensing unit SU and the light-emitting element LD. In this case, the first sensing element 120 may not receive light through the gap GP, and the size of the gap GP only needs to be sufficient to maintain electrical separation between the upper light-shielding portion 241 and the side light-shielding portion 242.

[0149] Figure 6A This is a partial top view of a sensing device 60 according to an embodiment of the present invention. Figure 6B It is along Figure 6A A cross-sectional view along section line C-C' is shown. In this embodiment, the sensing device 60 may include: a first substrate 110, a first sensing element 120, a first light-shielding layer 130, a second light-shielding layer 240, an insulating layer 150, a light-emitting element LD, and a cover plate CV. (The last sentence appears to be incomplete and possibly refers to a different embodiment.) Figure 5 Compared to the sensing device 50 shown, Figures 6A to 6B The main difference of the sensing device 60 shown is that the sensing device 60 may also include a second sensing element 620.

[0150] For example, in this embodiment, the second sensing element 620 may be located between the first light-shielding layer 130 and the insulating layer 150, and the second sensing element 620 may include the first light-shielding layer 130, the sensing layer SR2 and the electrode E2. The first light-shielding layer 130 may serve as the lower electrode of the second sensing element 620, the electrode E2 may serve as the upper electrode of the second sensing element 620, the sensing layer SR2 may be located between the first light-shielding layer 130 and the electrode E2, and the electrode E2 may be electrically connected to the upper light-shielding portion 241 of the second light-shielding layer 240.

[0151] In some embodiments, the upper light-shielding portion 241 may further include an extension portion 241a, and the extension portion 241a may extend along the sidewall W3 of the insulating layer 150 to the electrode E2, so that the electrode E2 can be physically connected to the upper light-shielding portion 241. In some embodiments, the orthographic projection of the gap GP between the upper light-shielding portion 241 and the side light-shielding portion 242 of the second light-shielding layer 240 onto the first substrate 110 may partially overlap the orthographic projection of the sensing layer SR2 of the second sensing element 620 onto the first substrate 110. In some embodiments, the orthographic projection of the gap GP onto the first substrate 110 may not overlap the orthographic projection of the sensing layer SR2 onto the first substrate 110.

[0152] In some embodiments, the second sensing element 620 primarily receives the light beam LR4 reflected by the finger FG and passing through the gap GP. Since the extension 241a of the upper light-shielding portion 241 extends toward the second sensing element 620 and connects to the electrode E2, the extension 241a also prevents the light beam LR4 passing through the gap GP from entering the first sensing element 120, so that the first sensing element 120 only receives the light beam LR3 reflected by the finger FG and passing through the second opening O2 and the first opening O1. In other words, the extension 241a can block lateral light from the side of the extension 241a away from the first sensing element 120, and the extension 241a and the side light-shielding portion 242 can block lateral light from all sides of the second sensing element 620, so that substantially only the light beam LR4 from above the second sensing element 620 and passing through the gap GP can enter the sensing layer SR2 of the second sensing element 620.

[0153] In this embodiment, the sensing layer SR2 can be made of germanium-doped silicon-rich oxide or other suitable materials such as organic photodiodes. The electrode E2 is preferably made of a transparent conductive material, such as indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, indium gallium zinc oxide, or other suitable oxides, or a stacked layer of at least two of the above.

[0154] In some embodiments, the light-emitting element LD of the sensing device 60 may include light-emitting elements LD1 and LD2, and the wavelength range of the light emitted by light-emitting element LD1 may be different from the wavelength range of the light emitted by light-emitting element LD2. For example, light-emitting element LD1 may emit visible light, such as red, green, or blue light, and light-emitting element LD2 may emit invisible light, such as infrared light. The arrangement of light-emitting elements LD1 and LD2 is not particularly limited and can be determined based on the light source and light intensity required by the first sensing element 120 and the second sensing element 620. For example, when the first sensing element 120 is a visible light sensing element and the second sensing element 620 is an invisible light sensing element, light-emitting elements LD1 and LD2 may be arranged alternately on the first sensing element 120 and the second sensing element 620. Therefore, please refer to... Figure 6BFor the first sensing element 120 and the second sensing element 620 located on the lower right side of the light-emitting element LD1, the light beam LR3 emitted by the light-emitting element LD1 and reflected by the finger FG can be sensed by the first sensing element 120, while the light beam LR4 emitted by the light-emitting element LD1 and reflected by the finger FG cannot be sensed by the second sensing element 620. Similarly, for the first sensing element 120 and the second sensing element 620 located on the lower right side of the light-emitting element LD2, the light beam emitted by the light-emitting element LD2 and reflected by the finger FG and passing through the second opening O2 and the first opening O1 cannot be sensed by the first sensing element 120, while the light beam emitted by the light-emitting element LD2 and reflected by the finger FG and passing through the gap GP can be sensed by the second sensing element 620.

[0155] Figure 7 This is a partial cross-sectional schematic diagram of a sensing device 70 according to an embodiment of the present invention. In this embodiment, the sensing device 70 may include: a first substrate 110, a first sensing element 120, a second sensing element 620, a first light-shielding layer 130, a second light-shielding layer 240, an insulating layer 150, light-emitting elements LD1 and LD2, and a cover plate CV.

[0156] With Figures 6A to 6B Compared to the sensing device 60 shown, Figure 7 The main difference of the sensing device 70 shown is that it may also include microlens structures ML1 and ML2. For example, in this embodiment, microlens structure ML1 may be disposed in the second opening O2, and microlens structure ML2 may be disposed in the gap GP. Microlens structures ML1 and ML2 may be lens structures with a center thickness greater than the edge thickness, such as symmetrical biconvex lenses, asymmetrical biconvex lenses, plano-convex lenses, or concave-convex lenses. Microlens structures ML1 and ML2 can improve the optical focal point and light collection angle, while reducing light leakage and light mixing problems caused by scattered or refracted light, thereby reducing light loss and improving the signal-to-noise ratio of the first sensing element 120 and the second sensing element 620.

[0157] In this embodiment, unlike Figure 6BAs shown, the extension 241a of the upper light-shielding portion 241 can extend along the sidewall W2 of the trench TR of the insulating layer 150 to the electrode E2, so that the electrode E2 is physically connected to the upper light-shielding portion 241, and the extension 241a remains electrically separated from the side light-shielding portion 242. In some embodiments, the second sensing element 620 can be partially located within the trench TR. In this way, the second sensing element 620 can primarily receive the light beam LR6 reflected by the finger FG and passing through the microlens structure ML2 and the gap GP. Since the extension 241a of the upper light-shielding portion 241 extends toward the second sensing element 620 and connects to the electrode E2, the extension 241a can prevent the light beam LR6 passing through the gap GP from entering the first sensing element 120, so that the first sensing element 120 only receives the light beam LR5 reflected by the finger FG and passing through the microlens structure ML1, the second opening O2, and the first opening O1. In other words, the extension 241a can block the side light from the side away from the first sensing element 120 from the extension 241a, and the extension 241a and the side light blocking part 242 can block the side light from all sides from the second sensing element 620, so that only the light beam LR6 passing through the gap GP can enter the sensing layer SR2.

[0158] Figure 8A This is a partial top view of a sensing device 80 according to an embodiment of the present invention. Figure 8B It is along Figure 8A A cross-sectional view along section line D-D' is shown. In this embodiment, the sensing device 80 may include: a first substrate 110, a first sensing element 120, a first light-shielding layer 130, a second light-shielding layer 240, an insulating layer 150, and a light-emitting element LD.

[0159] With Figure 5 Compared to the sensing device 50 shown, the main difference between the sensing device 80 shown in FIG8 is that the sensing device 80 further includes a second substrate 810 and a third sensing element 820. The second substrate 810 is located on the light-emitting element LD, the first sensing element 120, the light-emitting element LD and the third sensing element 820 are located between the first substrate 110 and the second substrate 810, and the third sensing element 820 is located between the second substrate 810 and the second light-shielding layer 240.

[0160] In this embodiment, the third sensing element 820 can be located between the second substrate 810 and the light-emitting element LD, and the first sensing element 120 and the third sensing element 820 can be located on different sides or opposite sides of the light-emitting element LD, respectively. The sensing device 80 can be fabricated by assembling the first substrate 110, on which the first sensing element 120 and the light-emitting element LD are disposed, with the second substrate 810, on which the third sensing element 820 is disposed. The dual-substrate design of the sensing device 80 helps to prevent moisture and enhance structural stability, thereby improving the reliability of the sensing device 80.

[0161] In this embodiment, the third sensing element 820 can be an invisible light sensing element, such as an organic photodiode (OPD), for sensing blood oxygen concentration or heart rate, extracting vein images for liveness detection, or extracting fingerprint images. For example, the third sensing element 820 may include an electrode E21, a hole transport layer HT, a photosensitive layer PT, an electron transport layer ET, and an electrode E22, wherein the electron transport layer ET, the photosensitive layer PT, and the hole transport layer HT are located between electrodes E21 and E22, and the electron transport layer ET may be located between the photosensitive layer PT and the second substrate 810, but is not limited thereto. In some embodiments, the hole transport layer HT may be located between the photosensitive layer PT and the second substrate 810. Furthermore, in some embodiments, both the first sensing element 120 and the third sensing element 820 may be invisible light sensing elements, and the sensing wavelength ranges of the first sensing element 120 and the third sensing element 820 may be different.

[0162] For example, electrode E21 can be an opaque conductive material, such as a silver layer or an aluminum layer. The hole transport layer HT can include PEDOT:PSS (poly(3,4-ethylene-dioxythiophene:polystyrene sulfonate)) or a high work function metal oxide, such as MoO3. The photosensitive layer PT can include a photosensitive polymer that absorbs in the infrared and / or near-infrared (NIR) regions, such as P3HT:PCBM (poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester) or PDPP3T-PCBM (poly-(diketopyrrole-terthiophene):[6,6]-phenyl-C61-butyric acid methyl ester). The electron transport layer ET can include zinc oxide (ZnO) or aluminum zinc oxide (AZO), and electrode E22 can be made of a transparent conductive material, such as indium tin oxide (ITO).

[0163] In some embodiments, the sensing device 80 may further include planarization layers P6 and P7 and an insulating layer I9, wherein the hole transport layer HT may be located in the opening O3 of the insulating layer I9, the planarization layer P6 may be located between the hole transport layer HT and the insulating layer I9 and the second substrate 810, and the planarization layer P7 may be located between the electrode E21 and the insulating layer I9 and the light-emitting element LD.

[0164] In some embodiments, the sensing device 80 may further include a microlens structure ML, which may cover the second opening O2. In some embodiments, the sensing device 80 may further include a signal line SL3 located between the third sensing element 820 and the second substrate 810. The signal line SL3 may be electrically connected to the electrode E22 of the third sensing element 820, and the signal line SL3 may contain, for example, a metal material with low resistance. When the electrode E22, which contains a transparent conductive material, has a high resistance, the signal line SL3 helps to improve the signal transmission rate to the electrode E22.

[0165] In some embodiments, the sensing device 80 may further include a buffer layer B2, which may be disposed between the signal line SL3 and the second substrate 810. In some embodiments, the sensing device 80 may further include insulating layers I7 and I8, which may be disposed between the signal line SL3 and the electrode E22 of the third sensing element 820 to avoid unnecessary electrical connections.

[0166] In this embodiment, the light-emitting element LD of the sensing device 80 may include light-emitting elements LD1 and LD2, and light-emitting element LD1 may emit visible light, while light-emitting element LD2 may emit invisible light, but is not limited thereto. In some embodiments, light-emitting elements LD1 and LD2 may emit visible light of different colors, such as red light, green light, blue light, or white light. In some embodiments, light-emitting elements LD1 and LD2 may emit invisible light of different wavelengths.

[0167] The arrangement of the light-emitting elements LD1 and LD2 can depend on the amount of light required by the first sensing element 120 and the third sensing element 820. For example, the light-emitting elements LD1 and LD2 can be arranged alternately. When a user touches the second substrate 810 with their finger FG to perform sensing such as fingerprint, vein image, blood oxygen concentration, blood pressure, and heart rate, the visible light LR7 emitted by the light-emitting element LD1 can be reflected by the finger FG and then enter the first sensing element 120 through the microlens structure ML, the second opening O2, and the first opening O1. The invisible light LR8 emitted by the light-emitting element LD2 can be reflected by the finger FG to the third sensing element 820, so that the third sensing element 820 can work with the light-emitting element LD2 to provide functions such as fingerprint recognition, liveness detection, or blood oxygen concentration sensing locally. Since the third sensing element 820 is very close to the finger FG, the third sensing element 820 does not need to be equipped with a light collimation structure, but the present invention is not limited thereto.

[0168] Figure 9A This is a partial top view of a sensing device 90 according to an embodiment of the present invention. Figure 9B It is along Figure 9A A cross-sectional view along section line E-E' is shown. In this embodiment, the sensing device 90 may include: a first substrate 110, a first sensing element 120, a first light-shielding layer 130, a second light-shielding layer 340, an insulating layer 150, a light source LS, and signal lines SL1 and SL2. The first sensing element 120 is located on the first substrate 110 and includes: a first electrode E11; a second electrode E12 located on the first electrode E11; and a sensing layer SR1 located between the first electrode E11 and the second electrode E12. The first light-shielding layer 130 is located on the first sensing element 120, and the second light-shielding layer 340 is located on the first light-shielding layer 130, and has a light-receiving area RA and a light-receiving edge RE adjacent to the light-receiving area RA. The insulating layer 150 is located between the first light-shielding layer 130 and the second light-shielding layer 340. The light source LS is located on the side of the first substrate 110 away from the first sensing element 120. The signal lines SL1 and SL2 may provide gate signals or serve as data lines, for example.

[0169] In this embodiment, the sensing device 90 may include a plurality of sensing units SU3, wherein the sensing unit SU3 includes a first sensing element 120, a first light-shielding layer 130 and a second light-shielding layer 340. The first light-shielding layer 130 in the sensing unit SU3 has a first opening O1, and the first opening O1 overlaps the first electrode E11, the sensing layer SR1 and the second electrode E12. In some embodiments, the sensing device 90 may further include a reference sensing unit SU4, which includes a first sensing element 120, a second light-shielding layer 340 and a third light-shielding layer 330. The position of the third light-shielding layer 330 in the reference sensing unit SU4 relative to the first sensing element 120 and the second light-shielding layer 340 is the same as the position of the first light-shielding layer 130 in the sensing unit SU3 relative to the first sensing element 120 and the second light-shielding layer 340. The third light-shielding layer 330 in the reference sensing unit SU4 does not have a first opening O1. Therefore, the reference sensing unit SU4 can be used to sense background stray light. In this way, the detection signal of the reference sensing unit SU4 can be subtracted from the detection signal of the sensing unit SU3 by an algorithm to reduce the error caused by background noise.

[0170] In this embodiment, the second light-shielding layer 340 may include an upper light-shielding portion 341 and a side light-shielding portion 342, wherein there is a gap GP between the upper light-shielding portion 341 and the side light-shielding portion 342, and the side light-shielding portion 342 may be connected to the upper light-shielding portion 341. The upper light-shielding portion 341 may have a second opening O2. Since the second opening O2 can be combined with the first opening O1 to serve as the light collimation structure of the first sensing element 120, the second opening O2 may also be defined as the light-receiving area RA of the second light-shielding layer 340, and the edge of the upper light-shielding portion 341 adjacent to the second opening O2 may be defined as the light-receiving edge RE of the second light-shielding layer 340. In other words, the light-receiving edge RE may be adjacent to the second opening O2.

[0171] In this embodiment, the ratio of the minimum distance D1 between the first opening O1 and the orthographic projection P1 of the second light-shielding layer 340 and the light-receiving edge RE to the maximum distance D2 between the second light-shielding layer 340 and the sensing layer SR1 can be from 0.3 to 0.85, that is, 0.3 ≤ D1 / D2 ≤ 0.85. For example, D1 / D2 can be 0.4, 0.6, or 0.8. In this way, the amount of light from the light source LS that enters the sensing layer SR1 after being reflected by the fingerprint ridge FV of the finger FG can be reduced, thereby increasing the ratio of the amount of reflected light from the fingerprint ridge FR of the finger FG to the amount of reflected light from the fingerprint ridge FV, thus improving the contrast of the fingerprint sensing image of the sensing device 90.

[0172] In some embodiments, the ratio (D3 / D2) between the side of the first opening O1 that is furthest from the light-receiving edge RE on the orthographic projection P1 of the second light-shielding layer 340 and the light-receiving edge RE, relative to the maximum distance D2 between the second light-shielding layer 340 and the sensing layer SR1, can be from 0.3 to 1.8. For example, D3 / D2 can be 0.5, 1.0, or 1.5. This reduces the proportion of reflected light from the fingerprint valley FV in the light entering the sensing layer SR1, thereby increasing the ratio of the amount of reflected light from the fingerprint ridge FR of the finger FG to the amount of reflected light from the fingerprint valley FV, thereby improving the contrast of the fingerprint sensing image of the sensing device 90.

[0173] In some embodiments, the minimum spacing D1 can be greater than 0 μm and less than 8 μm, for example, 2 μm, 4 μm, or 6 μm. In some embodiments, the maximum spacing D2 can be greater than 2 μm and less than 22 μm, for example, 5 μm, 10 μm, or 20 μm. In some embodiments, the spacing D3 can be greater than 0 μm and less than 24 μm, for example, 8 μm, 12 μm, or 22 μm.

[0174] In some embodiments, the sensing device 90 may further include a cover plate CV and an encapsulation layer EP, wherein the encapsulation layer EP may be located between the cover plate CV and the second light-shielding layer 340, and the encapsulation layer EP may, for example, block moisture from the second light-shielding layer 340, and the cover plate CV may form the upper surface of the sensing device 90.

[0175] In some embodiments, the second light-shielding layer 340 may have a distance D4 to the upper surface of the sensing device 90, the sensing layer SR1 may have a distance D5 to the upper surface of the sensing device 90, and the light-receiving area RA (or the second opening O2) of the second light-shielding layer 340 may have a light-receiving distance D. To avoid signal crosstalk between the light-receiving areas of adjacent sensing units, the minimum light-receiving range SR of the sensing unit SU3 is... min Ideally, the distance should not be less than D4. Therefore, the following relationship can be obtained:

[0176] SR min =D5(tanθ2-tanθ1)=D5[(D1+D) / D2-D1 / D2]=D5(D / D2)≥D4

[0177] Therefore, D / D2 ≥ D4 / D5. In other words, the ratio of the light-receiving distance D of the light-receiving area RA (or the second opening O2) to the maximum distance D2 between the second light-shielding layer 340 and the sensing layer SR1 is preferably greater than or equal to the ratio of the distance D4 from the second light-shielding layer 340 to the upper surface of the sensing device 90 to the distance D5 from the sensing layer SR1 to the upper surface of the sensing device 90.

[0178] In some embodiments, the distance D4 can be greater than 0 μm and less than 125 μm, for example, 30 μm, 70 μm or 110 μm. In some embodiments, the distance D5 can be greater than 2 μm and less than 150 μm, for example, 40 μm, 80 μm or 120 μm.

[0179] In some embodiments, the sensing unit SU3 may have an opaque area MA and a transparent area TA. The opaque area MA can be the region where the first light-shielding layer 130, the second light-shielding layer 340, and the signal line SL2 are present, while the region where the first light-shielding layer 130, the second light-shielding layer 340, and the signal line SL2 are absent is the transparent area TA. Additionally, the sensing unit SU3 may have a length L along the direction of the signal line SL1, and the length L may be the distance between the centers of two adjacent first openings O1. The transparent area TA may have a width S along the direction of the signal line SL1; in other words, the width S is the smaller of the distance between the orthographic projection of the signal line SL2 onto the first light-shielding layer 130 and the distance between the orthographic projection of the signal line SL2 onto the second light-shielding layer 340 and the second light-shielding layer 340. In some embodiments, the width S is preferably greater than or equal to zero and less than or equal to half the length L, that is, 0 ≤ S ≤ 1 / 2L.

[0180] In some embodiments, in the sensing unit SU3, the distance D6 between the orthographic projection of the first opening O1 onto the upper surface of the first light-shielding layer 130 and the end of the first light-shielding layer 130 near the signal line SL2 can be greater than or equal to the distance D7 between the orthographic projection of the signal line SL2 onto the first light-shielding layer 130 and the first light-shielding layer 130, in order to facilitate the reception of fingerprint reflected light signals at large angles. In some embodiments, the orthographic projection of the signal line SL2 onto the first light-shielding layer 130 can be adjacent to the first light-shielding layer 130; in other words, the distance D7 can be zero, in order to minimize stray light at small angles.

[0181] Figure 10A This is a partial top view of a sensing device 100 according to an embodiment of the present invention. Figure 10B It is along Figure 10A A schematic diagram of the cross section drawn by the section line F-F'. Figure 10C yes Figure 10A The simulation diagram of the light collection distribution of the sensing device 100 at different light collection angle positions corresponding to different light incident angles.

[0182] Please refer to the following at the same time Figure 10A and Figure 10BThe sensing device 100 may include: a first substrate 110, a first sensing element 120, a first light-shielding layer 130, a second light-shielding layer 440, an insulating layer 150, a light source LS, and signal lines SL1 and SL2. The first sensing element 120 is located on the first substrate 110 and includes: a first electrode E11; a second electrode E12 located on the first electrode E11; and a sensing layer SR1 located between the first electrode E11 and the second electrode E12. The first light-shielding layer 130 is located on the first sensing element 120, and the second light-shielding layer 440 is located on the first light-shielding layer 130, and has a light-receiving area RA and a light-receiving edge RE adjacent to the light-receiving area RA. The insulating layer 150 is located between the first light-shielding layer 130 and the second light-shielding layer 440. The light source LS is located on the side of the first substrate 110 away from the first sensing element 120.

[0183] In this embodiment, the sensing device 100 may include a plurality of sensing units SU5, wherein the first light-shielding layer 130 in the sensing unit SU5 has a first opening O1, and the first opening O1 overlaps the first electrode E11, the sensing layer SR1, and the second electrode E12. In some embodiments, the sensing device 100 may further include a reference sensing unit SU6, and the first light-shielding layer 130 in the reference sensing unit SU6 does not have the first opening O1. Therefore, the reference sensing unit SU6 can be used to sense background stray light. In this way, an algorithm can subtract the detection signal of the reference sensing unit SU6 from the detection signal of the sensing unit SU5 to reduce the error caused by background noise.

[0184] In this embodiment, the second light-shielding layer 440 may include an upper light-shielding portion 441 and a side light-shielding portion 442. The upper light-shielding portion 441 is located on the insulating layer 150, and the side light-shielding portion 442 can be connected to the upper light-shielding portion 441. The side light-shielding portion 442 can extend along the sidewall W4 of the insulating layer 150 toward the first sensing element 120, so that the second light-shielding layer 440 can block light rays that are directly above the first sensing element 120 and incident at a small angle. The light rays reflected by the finger FG can only enter the sensing layer SR1 of the first sensing element 120 through the lateral light-transmitting opening OP in the insulating layer 150 between the second light-shielding layer 440 and the first light-shielding layer 130. In this way, only light rays that are incident at a large angle can enter the sensing layer SR1 through the opening OP and the first opening O1. Therefore, the opening OP can also be defined as the light-receiving area RA of the second light-shielding layer 340, and the edge of the upper light-shielding part 441 adjacent to the opening OP can be defined as the light-receiving edge RE of the second light-shielding layer 440.

[0185] In this embodiment, the ratio of the minimum distance D1 between the first opening O1 and the orthographic projection P2 of the second light-shielding layer 440 and the light-receiving edge RE to the maximum distance D2 between the second light-shielding layer 440 and the sensing layer SR1 can be from 0.3 to 0.85, that is, 0.3 ≤ D1 / D2 ≤ 0.85. For example, D1 / D2 can be 0.4, 0.6, or 0.8. In this way, increasing D1 can reduce the amount of light from the light source LS that enters the sensing layer SR1 after being reflected by the fingerprint ridge FV of the finger FG, thereby increasing the ratio of the amount of reflected light from the fingerprint ridge FR of the finger FG to the amount of reflected light from the fingerprint ridge FV, thereby improving the contrast of the fingerprint sensing image of the sensing device 100.

[0186] In some embodiments, the ratio (D3 / D2) between the side of the first opening O1 at the farthest point of the projection P2 of the second light-shielding layer 440 from the light-receiving edge RE and the light-receiving edge RE, relative to the maximum distance D2 between the second light-shielding layer 440 and the sensing layer SR1, can be from 0.3 to 1.8, with the optimum being from 0.85 to 1.8. For example, D3 / D2 can be 0.5, 1.0, or 1.5, thereby reducing the proportion of reflected light from the fingerprint valley FV in the light entering the sensing layer SR1, thereby increasing the ratio of the amount of reflected light from the fingerprint ridge FR of the finger FG to the amount of reflected light from the fingerprint valley FV, thereby improving the contrast of the fingerprint sensing image of the sensing device 100.

[0187] In some embodiments, the sensing device 100 may further include a cover plate CV and an encapsulation layer EP, wherein the encapsulation layer EP may be located between the cover plate CV and the second light-shielding layer 440, and the encapsulation layer EP may, for example, block moisture from the second light-shielding layer 440, and the cover plate CV may form the upper surface of the sensing device 100.

[0188] In some embodiments, the second light-shielding layer 440 may have a distance D4 to the upper surface of the sensing device 100, the sensing layer SR1 may have a distance D5 to the upper surface of the sensing device 100, the upper surface of the first light-shielding layer 130 and the first opening O1 may have a height difference H, and the light-receiving area RA of the second light-shielding layer 440 may have a light-receiving distance D, which may be the distance between the orthographic projection of the corner UA of the first light-shielding layer 130 onto the second light-shielding layer 440 and the light-receiving edge RE. To avoid signal crosstalk between the light-receiving areas of adjacent sensing units, the minimum light-receiving range SR of the sensing unit SU5 is... min Ideally, the distance should not be less than D4. Therefore, the following relationship can be obtained:

[0189] SR min =D5(tanθ4-tanθ3)=D5[(D1+D) / H-D1 / H]=D5(D / H)≥D4

[0190] Therefore, D / H ≥ D4 / D5. In other words, the ratio of the light-receiving distance D of the light-receiving area RA to the height difference H between the upper surface of the first light-shielding layer 130 and the first opening O1 is preferably greater than or equal to the ratio of the distance D4 from the second light-shielding layer 440 to the upper surface of the sensing device 100 to the distance D5 from the sensing layer SR1 to the upper surface of the sensing device 100.

[0191] In some embodiments, the sensing unit SU5 may have an opaque area MA and a transparent area TA. The opaque area MA may be the region where the first light-shielding layer 130, the second light-shielding layer 440, and the signal line SL2 are present, while the region where the first light-shielding layer 130, the second light-shielding layer 440, and the signal line SL2 are absent is the transparent area TA. In some embodiments, the sensing unit SU5 may have a length L along the direction of the signal line SL1, and the transparent area TA may have a width S along the direction of the signal line SL1, and the width S may be equal to half the length L, that is, S = 1 / 2L.

[0192] In this embodiment, in the sensing unit SU5, the distance D6 between the orthographic projection of the first opening O1 onto the upper surface of the first light-shielding layer 130 and the end of the first light-shielding layer 130 near the signal line SL2 can be greater than or equal to the distance D7 between the orthographic projection of the signal line SL2 onto the first light-shielding layer 130 and the first light-shielding layer 130, and the distance D7 is close to zero, for example, the distance D7 is approximately 0.3 μm. Figure 10C The simulated light distribution diagram shows that the amount of stray light at small angles is significantly reduced.

[0193] Figure 11A This is a partial top view of a sensing device 100V according to an embodiment of the present invention. Figure 11B It is along Figure 11A A schematic diagram of the cross section line G-G'. Figure 11C yes Figure 11A The simulation diagram shows the light distribution of the 100V sensing device at different light-receiving angle positions corresponding to different light incident angles.

[0194] Please refer to the following at the same time Figure 11A and Figure 11B The sensing device 100V may include: a first substrate 110, a first sensing element 120, a first light-shielding layer 130, a second light-shielding layer 440, an insulating layer 150, a light source LS, and signal lines SL1 and SL2.

[0195] With Figures 10A to 10B Compared to the sensing device 100 shown, Figures 11A to 11BThe main difference between the shown sensing device 100V and the sensing device 100 is that the spacing D7 of the sensing device 100V is larger than that of the sensing device 100; for example, the spacing D7 of the sensing device 100V is approximately 1 / 4L or approximately 10μm. Figure 11C The simulated light distribution diagram shows that the amount of stray light at small angles from the 100V sensor is significantly greater than that from the sensor itself. Figure 10C The small-angle stray light quantity of the sensing device 100 shown. This confirms that shortening the spacing D7 can indeed effectively avoid small-angle stray light.

[0196] In summary, the sensing device of the present invention, through the optomechanical structure formed by the first and second light-shielding layers, can flexibly control the light-gathering angle and light-gathering amount of the sensing element, thereby effectively improving the signal-to-noise ratio of the sensing element. Furthermore, the sensing device of the present invention can utilize the first and second light-shielding layers as signal lines for the light-emitting element, thereby simplifying the integration structure of the sensing element and the light-emitting element. In addition, the sensing device of the present invention can flexibly determine the placement position of the light-emitting element, thus broadening the application range of the sensing device.

[0197] Although the present invention has been disclosed above with reference to embodiments, it is not intended to limit the present invention. Those skilled in the art can make some modifications and refinements without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention shall be determined by the appended claims.

Claims

1. A sensing device, comprising: a first substrate; a first sensing element on the first substrate; a first light shielding layer on the first sensing element, and having a first opening, wherein the first opening completely overlaps the first sensing element; a second light shielding layer on the first light shielding layer, and comprising an upper light shielding portion and a side light shielding portion, wherein the upper light shielding portion overlaps the first light shielding layer and has a second opening, and the side light shielding portion is separated from the upper light shielding portion; and an insulating layer between the first light shielding layer and the second light shielding layer, and the side light shielding portion covers a sidewall of the insulating layer. 2.The sensing device of claim 1, wherein the side light shielding portion is electrically connected to the first light shielding layer. 3.The sensing device of claim 1, wherein an included angle between the side light shielding portion and the first light shielding layer is 30 degrees to 85 degrees. 4.The sensing device of claim 1, wherein the second opening overlaps the first opening. 5.The sensing device of claim 1, wherein the second opening does not overlap the first opening. 6.The sensing device of claim 1, wherein the side light shielding portion surrounds the upper light shielding portion. 7.The sensing device of claim 1, further comprising a light emitting element on the second light shielding layer, and a first electrode of the light emitting element is electrically connected to the upper light shielding portion, and a second electrode of the light emitting element is electrically connected to the side light shielding portion. 8.The sensing device of claim 7, wherein the light emitting element partially overlaps the first sensing element. 9.The sensing device of claim 7, wherein the light emitting element comprises a first light emitting element and a second light emitting element, and a light wavelength range of the first light emitting element is different from a light wavelength range of the second light emitting element. 10.The sensing device of claim 1, further comprising a second sensing element between the first sensing element and the second light shielding layer, and the first light shielding layer is a first electrode of the second sensing element. 11.The sensing device of claim 10, wherein the upper light shielding portion is electrically connected to a second electrode of the second sensing element. 12.The sensing device of claim 10, wherein a gap between the upper light shielding portion and the side light shielding portion overlaps the second sensing element. 13.The sensing device of claim 1, further comprising a second substrate and a third sensing element, wherein the second substrate is on the second light shielding layer, and the third sensing element is between the second substrate and the second light shielding layer. 14.A sensing device, comprising: a first substrate; a first sensing element on the first substrate, and comprising: a first electrode; a second electrode on the first electrode; and a sensing layer between the first electrode and the second electrode; a first light shielding layer on the first sensing element, and having a plurality of first openings, wherein the first openings overlap the first electrode, the sensing layer and the second electrode; a second light shielding layer on the first light shielding layer, and having a light receiving area and a light receiving edge adjacent to the light receiving area; and ​ an insulating layer between the first light-shielding layer and the second light-shielding layer, wherein a ratio of a distance between a side of a footprint of the second light-shielding layer farthest from the light-receiving edge and the light-receiving edge with respect to a maximum distance between the second light-shielding layer and the sensing layer is 0.3 to 1.

8.

15. The sensing device according to claim 14, wherein a ratio of a light-receiving distance of the light-receiving region with respect to a maximum distance between the second light-shielding layer and the sensing layer is greater than or equal to a ratio of a distance from the second light-shielding layer to an upper surface of the sensing device with respect to a distance from the sensing layer to the upper surface of the sensing device.

16. The sensing device according to claim 14, wherein a ratio of a light-receiving distance of the light-receiving region with respect to a height difference between an upper surface of the first light-shielding layer and the first opening is greater than or equal to a ratio of a distance from the second light-shielding layer to an upper surface of the sensing device with respect to a distance from the sensing layer to the upper surface of the sensing device.

17. The sensing device according to claim 14, further comprising a signal line, and a distance between a footprint of the first light-shielding layer and the first light-shielding layer near an end of the signal line is greater than or equal to a distance between the signal line and the footprint of the first light-shielding layer.

18. The sensing device according to claim 17, wherein the footprint of the signal line is adjacent to the first light-shielding layer.

19. The sensing device according to claim 17, wherein a smaller one of a distance between the footprint of the signal line and the first light-shielding layer and a distance between the footprint of the signal line and the second light-shielding layer is less than or equal to half of a distance between centers of adjacent first openings.

20. The sensing device according to claim 17, further comprising a first sensing unit and a second sensing unit, wherein the first sensing unit includes the first sensing element, the first light-shielding layer, and the second light-shielding layer, the second sensing unit includes the first sensing element, the second light-shielding layer, and a third light-shielding layer, a position of the third light-shielding layer with respect to the first sensing element and the second light-shielding layer in the second sensing unit is the same as a position of the first light-shielding layer with respect to the first sensing element and the second light-shielding layer in the first sensing unit, and the third light-shielding layer does not have an opening.

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