Film stress control for plasma enhanced chemical vapor deposition

Abstract

Various embodiments of the present disclosure include methods and apparatus for depositing multiple layers on large-area substrates. In one embodiment, a processing chamber for plasma deposition is provided. The processing chamber includes a showerhead and a substrate support assembly. The showerhead is coupled to a radio frequency power source and grounded, and includes a plurality of perforated gas diffusion members. A plurality of plasma applicators are disposed within the showerhead, wherein one plasma applicator in the plurality of plasma applicators corresponds to one of the plurality of perforated gas diffusion members. Furthermore, a DC bias power supply is coupled to the substrate support assembly.

Description

[0001] This application is a divisional application of the invention patent application with the application date of November 26, 2019, application number 201980082054.8, and name “Film Stress Control for Plasma Enhanced Chemical Vapor Deposition”. background Technical Field

[0003] Various embodiments of the present disclosure generally relate to methods and apparatus for processing large area substrates. More particularly, various embodiments of the present disclosure relate to chemical vapor deposition systems and methods thereof for device fabrication. Background Art

[0005] In the manufacture of displays, a number of processes are used to deposit thin films onto substrates, such as liquid crystal display (LCD) and / or organic light emitting diode (OLED) substrates, to form electronic devices on the substrates. Generally, deposition is accomplished by introducing precursor gases into a vacuum chamber having a substrate disposed on a temperature-controlled substrate support. The precursor gases are typically directed through a gas distribution plate located near the top of the vacuum chamber. The precursor gases in the vacuum chamber can be excited into a plasma by applying radio frequency (RF) power from one or more RF sources coupled to the chamber to a conductive showerhead disposed in the chamber. The excited gases react to form a layer of material on the surface of the substrate disposed on the temperature-controlled substrate support.

[0006] Traditionally, plasmas are formed in conventional chambers used for deposition on large-area substrates using capacitively coupled electrode arrangements. Recently, interest has been explored in multi-coil inductively coupled plasma (ICP) arrangements, historically used for deposition on round substrates or wafers, for use in these large-area substrate deposition processes. In such ICP arrangements, used in large-area high-density plasma chemical vapor deposition (HDP-CVD) processes, RF power may be applied beneath the substrate to modulate the intrinsic film stress of various film layers in the fabricated semiconductor device. Lower intrinsic film stress is desirable for the finished device to reduce film damage (e.g., cracking and delamination). However, conventional inductively coupled arrangements utilize dielectric materials that enable the RF power applied beneath the substrate to penetrate the plasma processing region and couple to the conductive showerhead frame positioned above. The RF power penetrating the processing region results in different stress characteristics between the region of the film deposited directly beneath the showerhead coil and the region of the film deposited directly beneath the showerhead frame.

[0007] Therefore, what is needed in the art are improved methods and apparatus for regulating film stress during large area high density plasma vapor deposition. Summary of the Invention

[0008] Various embodiments of the present disclosure relate to methods and apparatus for processing large area substrates. More particularly, various embodiments of the present disclosure relate to chemical vapor deposition systems and methods thereof for device fabrication.

[0009] In one embodiment, a plasma deposition chamber is provided. The plasma deposition chamber includes a showerhead, a plurality of dielectric plates, a plurality of induction coils, and a substrate support assembly. The showerhead includes a plurality of perforated members, each of which is coupled to one or more of the plurality of support members. The support members provide a precursor gas to a space between the induction coils and the perforated members. The substrate support assembly includes an electrostatic chuck assembly, an insulating layer, and a substrate bias plate. The substrate bias plate is coupled to a DC power source and a low pass filter.

[0010] In one embodiment, a method for depositing a film on a substrate is provided. The method includes flowing a precursor gas to a plurality of gas spaces of a showerhead; varying the flow of the precursor gas into each of the plurality of gas spaces; applying radio frequency power to an induction coil of the showerhead to energize the precursor gas; flowing the energized precursor gas into a processing region of a processing chamber; and applying a DC bias power to a bias plate within a substrate support to regulate film deposition on the substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] In order that the above features of the present disclosure may be understood in more detail, the present disclosure may be described in more detail with reference to a number of embodiments, some of which are illustrated in the accompanying drawings. However, it should be noted that the accompanying drawings illustrate only exemplary embodiments of the present disclosure and are therefore not to be construed as limiting the scope of the present disclosure, and the present disclosure may admit of other equally effective embodiments.

[0012] Figure 1 A cross-sectional view of a processing chamber according to one embodiment of the present disclosure is shown.

[0013] Figure 2A Shown Figure 1 An enlarged view of a portion of the cover assembly.

[0014] Figure 2B A top plan view of one embodiment of a coil is shown.

[0015] Figure 3 A bottom plan view of a faceplate of a showerhead according to one embodiment of the present disclosure is shown, the faceplate having a superimposed profile of a substrate associated with the showerhead.

[0016] Figure 4 A cross-sectional view of a processing chamber according to one embodiment of the present disclosure is shown.

[0017] Figure 5 Shown Figure 4 Flowchart of operations performed when forming a deposited film.

[0018] To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements and features disclosed in one embodiment may be beneficially utilized on other embodiments without further recitation. DETAILED DESCRIPTION

[0019] Various embodiments of the present disclosure include methods and apparatus for depositing multiple layers on a large area substrate. In one embodiment, a processing chamber for plasma deposition is provided. The processing chamber includes a showerhead and a substrate support assembly. The showerhead is coupled to a radio frequency power source and is grounded, and the showerhead includes a plurality of perforated gas diffusion members. A plurality of plasma applicators are disposed within the showerhead, wherein one plasma applicator in the plurality of plasma applicators corresponds to one perforated gas diffusion member in the plurality of perforated gas diffusion members. Further, a DC bias power source is coupled to the substrate support assembly.

[0020] As used herein, a large area substrate is a substrate having a surface area that is typically about 1 square meter or greater. However, the substrate is not limited to any particular size or shape. In one aspect, the term "substrate" refers to any polygonal, square, rectangular, curved, or other non-circular workpiece, such as a glass or polymer substrate used in the manufacture of a flat panel display.

[0021] Herein, the showerhead is configured to flow gas through the showerhead and to flow gas into the processing space of the chamber in many independently controlled zones in order to improve the processing uniformity of the surface of the large-area substrate exposed to the gas in the processing zone. In addition, each zone is configured with a plenum, one or more perforated members between the plenum and the processing space of the chamber, and a coil or a portion of a coil dedicated to a zone or a single perforated plate. The plenum is formed between a dielectric window, a perforated member, and a surrounding frame structure. Each plenum is configured to allow the processing gas to flow through the plenum and be distributed, thereby causing a relatively uniform flow rate, or in some cases a tailored flow rate, of the gas flowing through the perforated member and entering the processing space. The plenum has a thickness less than twice the thickness of the dark space of the plasma formed under pressure by the processing gas in the plenum. An inductive coupler, preferably in the shape of a coil, is located behind the dielectric window and inductively couples energy through the dielectric window, the plenum, and the perforated member to strike and maintain the plasma in the processing space. The flow of process gas in each zone is controlled to obtain a uniform or regulated gas flow to achieve desired processing results on large area substrates.

[0022] Various embodiments of the present disclosure include high density plasma chemical vapor deposition (HDP-CVD) process chambers operable to form one or more layers or films on a substrate, including a large area substrate. A process chamber as disclosed herein may be suitable for delivering energized species of a precursor gas generated in a plasma. The plasma may be generated by inductively coupling energy into a gas under vacuum. Various embodiments of the present disclosure may be suitable for use in a chamber available from AKT America, Inc., a subsidiary of Applied Materials, Inc., Santa Clara, California. It should be understood that various embodiments described herein may also be implemented in chambers available from other manufacturers.

[0023] Figure 1 A cross-sectional view of an exemplary processing chamber 100 is shown in accordance with one embodiment of the present disclosure. A substrate 102 is disposed within a chamber body 104 on a substrate receiving surface 120 of a pedestal or substrate support assembly 108. The substrate support assembly 108 is coupled to a shaft 110 that extends through the chamber body 104. The shaft 110 is coupled to an actuator 112 that moves the substrate support assembly 108 vertically (in the Z direction) within the chamber body 104. For example, in the processing position shown Figure 1 The substrate support assembly 108 of the processing chamber 100 is shown. However, the substrate support assembly 108 can be lowered in the Z direction to a position adjacent to the transfer port 114. In this position, an end effector or a robot blade (not shown) is inserted through the transfer port 114 and between the substrate 102 and the substrate receiving surface 120 to transfer the substrate 102 out of the chamber body 104.

[0024] The processing chamber 100 also includes a lid assembly 106 disposed above a substrate support assembly 108. The lid assembly 106 can include a backing plate 122 that rests against the chamber body 104. The lid assembly 106 includes a gas distribution assembly or showerhead assembly 124 that is configured to deliver a process gas from a gas source to a processing region 126 between the showerhead assembly 124 and the substrate 102. The showerhead assembly 124 can also be coupled to a cleaning gas source that provides a cleaning gas, such as a fluorine-containing gas, to the processing region 126.

[0025] The showerhead assembly 124 can also serve as a plasma source 128. The showerhead assembly 124 includes one or more inductively coupled plasma generating components or coils 130. Each of the one or more coils 130 can be a single coil 130, two coils 130, or more than two coils 130 operating together, and are described below simply as coils 130. Each of the one or more coils 130 is coupled to a power supply 148 and a ground 133. In some embodiments, the power supply 148 is an inductively coupled radio frequency (RF) power source. The power supply 148 is configured to provide a power signal at any suitable frequency and power level to generate a plasma through the showerhead assembly 124. The first power supply may include matching circuitry or tuning capabilities for adjusting the electrical characteristics of the coils 130.

[0026] The showerhead assembly 124 further includes a panel 132 having a plurality of gas flow diffusers 134. Each of the plurality of gas flow diffusers 134 is supported by a plurality of support members 136 in a grid-like configuration and includes a plurality of openings 220 ( Figure 2A Each of the plurality of coils 130 , or portions of one or more coils 130 , is disposed on or above a corresponding dielectric plate 138 . Figure 2A More clearly shown is an example of a coil 130 disposed above a dielectric plate 138 within the lid assembly 106. A plurality of gas spaces 140 are defined by the dielectric plate 138, the gas flow diffuser 134, and the surface of the support member 136. Each of the one or more coils 130 is configured to receive a radio frequency signal from a power source 148 and create an electromagnetic field that excites the process gas into a plasma in the gas space 140. The excited process gas in the gas space 140 flows through the gas flow diffuser 134 and into the processing region 126, and toward the substrate 102.

[0027] Process gas from a gas source is provided to each of the plurality of gas spaces 140 via conduits 200, 205 in the support member 136. The volume or flow of gas entering and leaving the showerhead assembly 124 is controlled in different zones of the showerhead assembly 124. The flow of gas to each of the plurality of gas spaces 140 can be controlled by a plurality of flow controllers, such as flow controllers 142, 143, and 144, as shown. Figure 1As shown. For example, the flow rate of gas flowing to the outer area or edge area of ​​the showerhead assembly 124 can be controlled by flow controllers 142 and 143, while the flow rate of gas flowing to the inner area or central area of ​​the showerhead assembly can be controlled by flow controller 144. When performing chamber cleaning, cleaning gas from a cleaning gas source can flow to each of the plurality of gas spaces 140 and into the processing space 140, where the cleaning gas is excited into ions, radicals, or both. The excited cleaning gas can flow through the gas flow diffuser 134 and into the processing area 126 to clean the chamber components.

[0028] Figure 2A yes Figure 1 1. As previously described, the precursor gas from the gas source flows to the gas space 140 through the first conduit 200 formed in the backing plate 122. Each of the plurality of first conduits 200 is coupled to a second conduit 205 formed through the showerhead frame 136. The second conduits 205 provide the precursor gas to the gas space 140 at the opening 210. In some embodiments, some of the second conduits 205 may provide gas to two adjacent gas spaces 140 (one of these second conduits 205 may be connected to the other). Figure 2A ). In some embodiments, the second conduit 205 can include a flow restrictor 215 to control the flow of gas to the gas space 140. The size of the flow restrictor 215 can be varied to control the flow of gas therethrough. For example, each of the plurality of flow restrictors 215 can include an orifice of a specific size (e.g., diameter) for controlling the flow of gas. Furthermore, each of the plurality of flow restrictors 215 can be varied as needed to provide a larger orifice size or a smaller orifice size as needed to control the flow of gas therethrough.

[0029] like Figure 2A As shown, the gas flow diffuser 134 is disposed at the lower end of the gas space 140 and includes a plurality of openings 220 extending through the gas flow diffuser 134. Due to the diameter of the plurality of openings 220 extending between the gas space 140 and the processing region 126, each of the plurality of openings 220 allows gas energized by the coil 130 to flow from the gas space 140 into the processing region 126 in the form of plasma at a desired flow rate. The openings 220 and / or rows and columns of openings 220 may have different sizes and / or spacings to equalize the gas flow through each of the plurality of openings 220 in one or more gas flow diffusers 134. Alternatively, the gas flow from each of the plurality of openings 220 may be non-uniform, depending on the desired gas flow characteristics.

[0030] The support member 136 is coupled to the back plate 122 by fasteners 240, such as bolts or screws. Each of the plurality of support members 136 physically supports and separates a single gas flow diffuser 134 at an interface portion 245. Each of the plurality of interface portions 245 can be a ledge or shelf that supports the perimeter or edge of the gas flow diffuser 134. In some embodiments, the interface portion 245 includes a removable piece 250. The removable piece 250 is fastened to the support member 136 by fasteners (not shown), such as bolts or screws. A portion of the interface portion 245 is L-shaped, while another portion of the interface portion 245 is T-shaped. One or more seals 265 are used to seal the gas space 140. For example, the seal 265 is an elastic material, such as an O-ring seal or a polytetrafluoroethylene (PTFE) joint sealant material. One or more seals 265 may be provided between the support member 136 and the gas flow diffusers 134. The removable plate 250 is used to support the gas flow diffusers 134 on the support member 136. If necessary, the removable plate 250 can be removed to replace each gas flow diffuser 134 individually.

[0031] Additionally, each of the plurality of support members 136 supports a dielectric plate 138 (e.g., a dielectric plate 138) using a shelf 270 extending therefrom. Figure 2A (as shown). In various embodiments of the showerhead assembly 124 / plasma source 128, the lateral surface area (in the XY plane) of the dielectric plates 138 is smaller than the surface area of ​​the entire showerhead assembly 124 / plasma source 128. A rack 270 is utilized to support the dielectric plates 138. The reduced lateral surface area of ​​the plurality of dielectric plates 138 enables the dielectric material to be used as a physical barrier between the vacuum environment and plasma in the gas space 140 and processing region 126 and the atmospheric environment, where the adjacent coils 130 are typically located, without imposing significant stress therein due to the large area supporting atmospheric pressure loads.

[0032] During processing, seal 265 is used to seal space 275 (at or near atmospheric pressure) from gas space 140 (at sub-atmospheric pressure in the millitorr range or lower). Interface member 280 is shown extending from support member 136, and fasteners 285 are used to secure (i.e., push) dielectric plate 138 against seal 265 and frame 270. Seal 265 can also be used to seal the space between the outer perimeter of gas flow diffuser 134 and support member 136.

[0033] The material used for the showerhead assembly 124 / plasma source 128 is selected based on one or more of electrical properties, strength, and chemical stability. The coil 130 is made of a conductive material. The backing plate 122 and the support member 136 are made of a material capable of supporting the weight of the supported component and the atmospheric pressure load, which may include metal or other similar materials. The backing plate 122 and the support member 136 can be made of a non-magnetic material (e.g., a non-paramagnetic or non-ferromagnetic material), such as an aluminum material. The removable plate 250 is also formed of a non-magnetic material (such as a metal material, such as aluminum) or a ceramic material (such as alumina (Al2O3) or sapphire (Al2O3)). The gas flow diffuser 134 is made of a ceramic material, such as quartz, alumina, or other similar materials. The dielectric plate 138 is made of quartz, alumina, or sapphire material.

[0034] In some embodiments, the showerhead frame 136 includes one or more coolant channels 255 in the frame. The one or more coolant channels 255 are fluidly coupled to a fluid source 260 configured to provide a coolant medium to the coolant channels 255.

[0035] Figure 2B A top plan view of one embodiment of a coil 130 positioned on a dielectric plate 138 in a lid assembly 106 is shown. In one embodiment, a Figure 2B The coil 130 shown is constructed so that the coil configuration shown is formed on each of the plurality of dielectric plates 138, so that each planar coil is connected in series with adjacently positioned coils 130 in a desired pattern throughout the showerhead assembly 124. The coil 130 includes a conductor pattern 290 having a rectangular spiral shape. However, other configurations of the conductor pattern are also contemplated. The electrical connection includes an electrical input terminal 295A and an electrical output terminal 295B. Each of the one or more coils 130 of the showerhead assembly 124 is connected in series and / or in parallel.

[0036] Figure 3A bottom plan view of one embodiment of the faceplate 132 of the spray head assembly 124 is shown. According to one embodiment of the present disclosure, Figure 3 The figure includes an overlaid profile of the position of the substrate 102 on the substrate receiving surface 120 relative to the showerhead assembly 124 during processing within the processing chamber 100. As described above, the showerhead assembly 124 is constructed to include one or more gas flow diffusers 134 supported and separated by a plurality of support members 136 arranged in a grid-like frame. Gas flows from the gas space 140 into the processing region 126 above the substrate 102 through a plurality of openings 220 passing through each gas flow diffuser 134. The number of coils 130, gas spaces 140, and gas flow diffusers 134 within the showerhead assembly 124 depends on the total area of ​​the substrate 102 used for film deposition.

[0037] Figure 4 is a cross-sectional view illustrating a processing chamber 400 according to one embodiment of the present disclosure. In addition to the features of the processing chamber 100 described above, the processing chamber 400 also includes a substrate support assembly 108 having an electrostatic chuck assembly 158, a substrate biasing plate 160, and an insulating layer 162.

[0038] In one embodiment, the electrostatic chuck assembly 158 is positioned at the uppermost position of the substrate support assembly 108 such that the substrate receiving surface 120 corresponds to the upper surface of the electrostatic chuck assembly 158. The electrostatic chuck assembly 158 is coupled to an electrostatic chuck power supply 152 disposed externally to the chamber body 104. The electrostatic chuck power supply can be any suitable power supply configured to provide a desired voltage for electrostatic attraction of the substrate 102 during processing. Furthermore, the electrostatic chuck assembly 158 can include two or more electrodes, which can be configured in any suitable arrangement for attraction of a particular substrate arrangement. For example, the electrostatic chuck assembly 158 can include two electrodes arranged in a rectangular spiral, with one electrode surrounding the other. In another example, the electrostatic chuck assembly 158 can include two interleaved electrodes forming a circular shape. Each electrode in the electrostatic chuck assembly 158 can be powered separately by the electrostatic chuck power supply 158, thereby enabling the electrodes to be charged with different polarities.

[0039] An insulating layer 162 is disposed at the bottommost portion of the substrate support assembly 108. The insulating layer 162 can be formed of a dielectric material such as silicon dioxide (SiO2). The insulating layer 162 shields the electric field generated by the substrate bias plate 160 from the line of sight of the chamber body 104, thereby minimizing the possibility of arcing between the substrate bias plate 160 and the chamber body 104.

[0040] The substrate bias plate 160 is disposed between the electrostatic chuck assembly 158 and the insulating layer 162. The substrate bias plate is further coupled to the substrate bias power supply 156 and the low pass filter 154, which are arranged in a linear connection. Figure 4 As shown, the substrate bias power supply 156 and the low-pass filter 154 can be disposed externally to the chamber body 104. The substrate bias plate 162 and the substrate bias power supply 156 are configured to provide an electrical bias beneath the substrate 102 to extract ions from the plasma in the processing region 126 toward a desired region of the substrate 102 on the substrate support assembly 108. When used during processing, the extraction of plasma ions toward the desired region of the substrate 102 regulates film deposition so that film properties (e.g., film thickness and film stress) can be controlled. For example, the amount (e.g., density) of ions extracted from the plasma can be adjusted by adjusting the substrate bias power supplied to certain regions of the substrate surface, thereby controlling the tensile stress and compressive stress properties of a film deposited on the substrate 102.

[0041] The substrate bias power supply 156 is a direct current (DC) power source that supplies a DC voltage of positive or negative polarity. In one embodiment, the substrate bias power supply 156 is configured to supply a constant DC bias. In another embodiment, the substrate bias power supply 156 is configured to supply a pulsed DC bias. The low-pass filter 154 can be configured to prevent RF signals from the power supply 148 from coupling with the substrate support assembly 108 and being passed to the substrate bias power supply 156.

[0042] Figure 5 is a flow chart showing the use of Figure 4 A method 500 for controlling intrinsic film stress during large area film deposition in a process chamber 400 of a process chamber 400 is provided. In operation 510, a substrate 102 is transferred onto a substrate receiving surface 120 of a substrate support assembly 108. The substrate 102 may be transferred into the process chamber 100 and onto the substrate support assembly 108 by any suitable method, such as by a robotic blade through a transfer port 114 located in a sidewall of the chamber body 104. The substrate support assembly 108 may then be adjusted to a processing position by an actuator 112, such as Figure 1 shown.

[0043] In operation 520, precursor gas from a gas source is provided to the gas spaces 140 via conduits 200, 205 disposed within the support member 136. The flow of the precursor gas can be controlled by a plurality of flow controllers 142, 143, which control the amount and rate of gas provided to each gas space 140.

[0044] In operation 530, the power supply 148 supplies RF power to the inductively coupled coil 130 within the lid assembly 106. The RF power can be supplied at any suitable frequency or power level to generate a plasma. For example, 56 kilowatts (kW) of RF power and a signal frequency of 13.56 megahertz (MHz) can be applied. In another example, 56 kilowatts of power and a 2 megahertz (MHz) frequency RF signal can be applied. Each of the plurality of coils 130 receives the RF power supplied by the power supply 148 and creates an electromagnetic field that excites the precursor gas within the gas space 140. The excited precursor gas then flows through the plurality of openings 220 and into the processing region 126 toward the substrate 102, and these openings 220 are arranged to pass through the gas flow diffuser 134.

[0045] In operation 540, as the energized process gas flows into the processing region 126, a DC bias is applied to the substrate bias plate 160. The DC bias is supplied by the substrate bias power supply 156 and filtered by the low-pass filter 154. The DC bias output can be pulsed or constant, with a positive potential or a negative potential. The DC bias can be supplied to the substrate bias plate 160 at any suitable pulse rate or power level. For example, a pulsed DC bias can be supplied having a pulse rate of about 50 kHz to about 500 kHz (e.g., about 100 kHz to about 400 kHz). For example, a pulsed DC bias can be supplied having a pulse rate of about 250 kHz to about 300 kHz. The pulsed or constant DC bias can be provided at a power level ranging from about 50 watts (W) to about 1000 watts (e.g., about 250 watts to about 750 watts). For example, the DC bias power is supplied at a power level of about 400 watts to about 600 watts.

[0046] By creating a local capacitively coupled electric field, applying DC power across the substrate bias plate 160 biases the plasma toward the substrate 102, thereby increasing ion bombardment on the substrate surface and enabling formation of a film layer with modulated intrinsic film stress in operation 550. The use of a DC substrate bias in operation 540 enables modification of intrinsic film stress properties during large-area high-density plasma chemical vapor deposition (HDP-CVD) using a multi-coil inductively coupled plasma (IPC) system. In particular, the DC bias enables formation of large-area substrate films with reduced and uniform film stress levels throughout the deposited film layer.

[0047] Other methods of film stress control do not involve substrate biasing, or involve applying RF substrate bias power to modulate ion impact on the substrate surface. However, when implemented in a high-density plasma chamber with a multi-coil inductively coupled plasma system, these methods can result in deposited films with undesirable film stress characteristics. For example, when no substrate bias is applied, deposited films tend to exhibit undesirably high tensile filmstress levels.

[0048] Alternatively, when an RF substrate bias is applied, the deposited film tends to exhibit non-uniform film stress levels. In particular, the film stress in the region of the substrate directly below the coils of a multi-coil inductively coupled plasma system tends to be modulated by the RF bias power, while the region of the substrate below the showerhead structural frame is largely unaffected. This non-uniformity is a result of the RF bias power penetrating the plasma and coupling to the grounded showerhead structural frame disposed above. Therefore, when an RF substrate bias is applied, the film stress is position dependent.

[0049] In contrast, when a DC substrate bias is applied, film stress is modulated independently of position. Specifically, because the DC bias power is not coupled to the grounded showerhead structure frame above, the resulting film exhibits uniform film stress properties. Consequently, the plasma sheath is affected by the DC bias power, and the area below the showerhead structure frame and the area below the coils of the multi-coil inductively coupled plasma system are modulated substantially equally.

[0050] Embodiments of the present disclosure include methods and apparatus capable of forming one or more films on large area substrates. Plasma uniformity and gas (or precursor) flow are controlled by a combination of configurations of a single gas flow diffuser 134, coil 130, and / or flow controllers 142, 143, and 144. Film stress uniformity is controlled by applying a DC substrate bias to a substrate bias station 160 within the substrate support assembly 108.

[0051] In one example, a plasma deposition chamber is provided. The plasma deposition chamber includes a showerhead having a plurality of perforated members, an inductive coupler corresponding to one or more of the plurality of perforated members, a plurality of support members for supporting each perforated member, and a substrate support assembly. The one or more support members provide a precursor gas to a space between the inductive coupler and the perforated member. The substrate support assembly includes an electrostatic chuck assembly, an insulating layer, and a substrate bias plate. The substrate bias plate is coupled to a DC power supply and a low-pass filter.

[0052] In the example, the low pass filter selectively prevents the radio frequency power provided to the induction coil from coupling with the DC power source.

[0053] In the described examples, the DC power supply is optionally configured to provide a constant DC bias to the bias plate in either positive or negative polarity.

[0054] In the described examples, the DC power supply is optionally configured to provide a pulsed DC bias to the bias plate in either positive or negative polarity.

[0055] In the described examples, each of the plurality of perforated members and the plurality of support members optionally includes an interface portion, and each interface portion includes one or more removable tabs.

[0056] While the foregoing is directed to several embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope, and the scope is determined by the claims that follow.

Claims

1. A plasma deposition chamber, comprising: a spray head having a plurality of perforated members, each of the perforated members being supported by an adjacent support member of a plurality of support members; a plurality of dielectric plates disposed above the plurality of perforated members, each dielectric plate being supported by adjacent support members, a back plate disposed above the plurality of dielectric plates, the back plate being coupled to the plurality of dielectric plates by the plurality of support members, wherein The respective perforated member, the respective dielectric plate and the adjacent support member define a gas space that is in fluid communication with the adjacent support member, and The respective dielectric plates, the back plates and the adjacent support members define a coil space; a plurality of induction coils, each induction coil being supported by a respective dielectric plate in a respective coil space; and A substrate support assembly is provided, wherein the substrate support assembly includes a substrate bias plate coupled to a power supply and a low pass filter disposed between the substrate bias plate and the power supply.

2. The chamber of claim 1, wherein the support member comprises a conduit formed therein for flowing a precursor gas. 3 . The chamber of claim 2 , wherein the support member further comprises a coolant channel formed therein for flowing a coolant. 4 . The chamber of claim 1 , wherein the power supply is a DC power supply configured to provide a constant DC bias voltage to the substrate bias plate in a positive polarity or a negative polarity.

5. The chamber of claim 4, wherein the constant DC bias is provided at a power level of from about 50 W to about 1000 W. 6 . The chamber of claim 1 , wherein the power supply is a DC power supply configured to provide a pulsed DC bias to the substrate bias plate in a positive polarity or a negative polarity.

7. The chamber of claim 6, wherein the pulsed DC bias is pulsed at a frequency from about 50 kHz to about 500 kHz.

8. The chamber of claim 1, wherein the low pass filter prevents radio frequency power provided to the plurality of inductive coils from coupling to a power source. 9 . The chamber of claim 1 , wherein a top surface of each dielectric plate is in contact with each induction coil in the coil space.

10. The chamber of claim 1, wherein the plurality of support members are arranged in a grid configuration to separate the plurality of perforated members, the dielectric plate, and each of the induction coils.

11. The chamber of claim 1 , wherein each of the plurality of induction coils is coupled to a radio frequency power source.

12. A method comprising the steps of: placing a substrate on a substrate support disposed in a processing region of a chamber body; providing a precursor gas from a gas source to a plurality of gas spaces of the showerhead, each gas space being defined by a respective perforated member, a respective dielectric plate disposed above the respective perforated member, and an adjacent support member, providing the precursor gas to the plurality of gas spaces comprising flowing the precursor gas through a conduit disposed in each adjacent support member; supplying radio frequency power to each respective dielectric plate to form energized precursor gas in the plurality of gas spaces; flowing the energized precursor gas through each respective perforated member into the processing region of the chamber body; and applying a DC bias voltage to a substrate bias plate disposed in the substrate support to bias the excited precursor gas toward the substrate, wherein a backing plate is disposed above each respective dielectric plate, the backing plate being coupled to each respective dielectric plate by adjacent support members, wherein the respective dielectric plates, the back plate and the adjacent support members define a coil space, and Each of the plurality of inductive couplers is supported by a respective dielectric plate in the coil space.

13. The method of claim 12, wherein the DC bias is a constant DC bias provided to the substrate bias plate.

14. The method of claim 13, wherein the DC bias is provided at a power level of from about 50 W to about 1000 W.

15. The method of claim 12, wherein the DC bias is a pulsed DC bias provided to the substrate bias plate, the pulsed DC bias being pulsed at a frequency of from about 50 kHz to about 500 kHz.

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