A 5G ceramic dielectric filter material and its preparation method

Abstract

The application provides a preparation method of a 5G ceramic dielectric filter material, and the method comprises the following steps: S1, performing sand blasting or polishing treatment on the surface of a ceramic base, then immersing the treated ceramic base into an organic solvent for ultrasonic cleaning, and drying the cleaned ceramic base; S2, by means of high-energy pulse ion implantation, using a first metal target, implanting first metal ions onto the surface of the ceramic base treated in step S1 to form a transition layer; S3, by means of magnetic filter cathode vacuum arc deposition, using a second metal target, depositing a second metal on the transition layer prepared in step S2 to form a connecting layer; S4, by means of multi-arc ion plating, using a third metal target, depositing a third metal on the connecting layer prepared in step S3 to form a surface metal layer, and obtaining a filter film layer material. The preparation method of the film layer material obtains a high-metalized silver layer with high compactness, low roughness and uniform thickness, so that the bonding force between the base ceramic layer and the metal film silver layer is good, and the insertion loss is low.

Description

Technical Field

[0001] This invention belongs to the field of ceramic material preparation technology, specifically relating to a 5G ceramic dielectric filter film material and its preparation method. Background Technology

[0002] Base station filters, as an important component of radio frequency devices, primarily operate by allowing specific frequency components of transmitted and received signals to pass through while significantly attenuating other frequency components. In the 5G era, constrained by the requirements of Massive MIMO for large-scale antenna integration, filters are becoming increasingly miniaturized and integrated. Compared to metal cavity filters, ceramic filters, with their advantages of small size, high Q value, high stability, and low cost, are gradually becoming the market mainstream.

[0003] 5G ceramic dielectric filters are made of metal oxides such as calcium, magnesium, and titanium. These ceramic materials are formed into sheets, with silver coating on both sides as electrodes. After being polarized by a DC high voltage, they exhibit piezoelectric effect. They function as filters, exhibiting stability and good anti-interference performance, and are widely used as radio frequency components in various electronic products such as 5G base stations, televisions, VCRs, and radios. They offer advantages such as stable performance, no adjustment required, and low cost, replacing traditional LC filter networks.

[0004] Currently, the main method for metallizing the substrate of ceramic dielectric filters with silver is the conductive silver paste impregnation process. However, this traditional process results in uneven and rough silver layer thickness, low effective conductivity, and negatively impacts the filter's insertion loss performance.

[0005] While existing technologies address these issues, certain limitations remain. For instance, patent CN 112779494A discloses a surface metallization process for dielectric ceramic filters. This process uses high-energy pulsed ion implantation to inject metal ions such as silver, copper, Ti, and lithium onto the surface of the dielectric ceramic filter workpiece. This process fills pores and provides a base point for bonding with the surface conductive metal layer, acting as a buffer for the bonding between the substrate and the surface metal layer, significantly improving adhesion. However, this process still suffers from poor uniformity and high insertion loss in the ceramic filter.

[0006] Therefore, providing a method for preparing 5G ceramic filter materials with good uniformity and low insertion loss is one of the research directions in this field. Summary of the Invention

[0007] To address the aforementioned technical problems, the present invention provides 5G ceramic dielectric filter materials and their preparation method, aiming to solve the technical problems of poor uniformity and high insertion loss of ceramic filter film materials in the prior art.

[0008] To achieve the above objectives, a first aspect of the present invention provides a method for preparing a 5G ceramic dielectric filter film material, the method comprising the following steps:

[0009] S1. The surface of the ceramic substrate is sandblasted or polished, and then the treated ceramic substrate is immersed in an organic solvent for ultrasonic cleaning. The cleaned ceramic substrate is then dried and set aside for later use.

[0010] S2. Using a high-energy pulsed ion implantation method, a first metal target is used to implant first metal ions into the surface of the ceramic substrate after step S1 to form a transition layer.

[0011] S3. A second metal is deposited on the transition layer prepared in step S2 by magnetically filtered cathode vacuum arc deposition using a second metal target to form a connecting layer.

[0012] S4. Using a multi-arc ion plating method and a third metal target, a third metal is deposited on the connection layer prepared in step S3 to form a surface metal layer, thereby obtaining the 5G ceramic dielectric filter film material.

[0013] Furthermore, the first metal is nickel, the second metal is copper, and the third metal is silver.

[0014] In the preparation method provided by the present invention, the high-energy pulsed ion implantation method in step S2 can make the nickel pinning effect penetrate into the substrate for priming, the magnetically filtered cathode vacuum arc deposition in step S3 makes the bonding force between copper and nickel better, and the multi-arc ion plating method in step S4 can plate a silver layer to meet the requirements of silver quality, and the copper layer will reduce the amount of silver used, which can save costs and meet performance requirements.

[0015] In this invention, silver layers are coated on a ceramic substrate using different ion sputtering methods at each step. The main process involves injecting nickel particles with a high-energy particle beam as a transition layer between the metal and the ceramic, forming the main interface with high adhesion between the outer silver layer and the substrate ceramic. A copper layer is deposited on the underlying nickel layer using magnetic filtering technology. Magnetic filtering technology can provide a highly dense copper layer, which can reduce the insertion loss of the ceramic filter and also provide a uniform and stable interface for the subsequent multi-arc deposition of the silver layer. The multi-arc ion beam deposition of the silver layer is fast, saves deposition time, and the deposited silver layer is evenly distributed. The roughness of the multi-arc deposition can be controlled within Ra0.8, and its thickness uniformity can reach 10%. This results in good bonding and high adhesion between the substrate ceramic layer and the metal film silver layer, and meets the surface smoothness requirements of the ceramic filter.

[0016] In this invention, nickel is chosen as the first metal and copper as the second metal because nickel has a better implantation effect, while copper has a poor implantation effect, which affects the adhesion between the outer silver layer and the substrate ceramic.

[0017] Furthermore, in step S1, the surface of the ceramic substrate is sandblasted or polished using 2000-4000 mesh fine sand.

[0018] Furthermore, the organic solvent in step S1 is ethanol, and the ultrasonic cleaning time is 20-30 minutes to remove residual abrasive and stains from the ceramic substrate surface.

[0019] Furthermore, in step S1, the drying temperature is 150–300°C and the drying time is 10–15 min.

[0020] Furthermore, during high-energy pulsed ion implantation in step S2, the rotational speed of the ceramic substrate is 5-10 r / min, the triggering frequency of the first metal source is 1-10 Hz, the implantation voltage is 6-8 KV, the arc voltage is 60-90 V, the beam current is 5-8 mA, and the implantation time is 20-40 min.

[0021] Furthermore, in step S3, during the magnetically filtered cathode vacuum arc deposition, the rotation speed of the ceramic substrate is 5-10 r / min, the bias voltage is 100V-800V, the duty cycle is 10%-80%, the arc current is 80-120A, the current of the magnetically filtered magnetic field is 1-2A, and the deposition time is 20-30 min.

[0022] Furthermore, during the multi-arc ion beam deposition in step S3, the rotational speed of the ceramic substrate is 5-10 r / min, and the vacuum degree of the vacuum chamber is 1-9 × 10⁻⁶. -2 Pa, arc current of 80-120A, coil pulse magnetic field of 1-5A, bias voltage of 0V, deposition time of 1-5h.

[0023] In this invention, by precisely controlling the parameters of the metal layer injected by different methods, the effect of material deposition is guaranteed, and the performance requirements of 5G ceramic dielectric filter film material are met.

[0024] A second aspect of the present invention provides a 5G ceramic dielectric filter film material prepared by the above method, wherein the film material is a four-layer composite structure, comprising, from the inside out, a ceramic substrate, a transition layer, a connecting layer and a surface metal layer.

[0025] Furthermore, the deposition thickness of the transition layer is 10-100 nm; the deposition thickness of the connecting layer is 100-300 nm; and the deposition thickness of the surface metal layer is 1-20 μm, preferably 6-10 μm.

[0026] In this invention, the film material prepared by the above method can save costs and meet the bonding requirements of use by controlling the thickness of the transition layer and the connecting layer.

[0027] Compared with the prior art, the present invention has the following beneficial effects:

[0028] (1) The method for preparing ceramic dielectric filter film material provided by the present invention performs multiple metal implantation deposition on the ceramic substrate through different ion beam sputtering processes in each step, forming a highly dense, low roughness, and uniform thickness highly metallized silver layer, which makes the bonding force between the substrate ceramic layer and the metal film silver layer good and the silver layer adhesion strong.

[0029] (2) The method for preparing ceramic dielectric filter film material provided by the present invention deposits a copper interconnect layer on the transition layer through magnetic filtering technology, thereby providing a high-density copper layer. The high-density copper layer can reduce the insertion loss of the ceramic filter and also provide a uniform and stable interface for subsequent multi-arc silver deposition.

[0030] (3) The method for preparing ceramic dielectric filter film material provided by the present invention is to deposit silver layer by multi-arc ion beam. The multi-arc deposition speed is fast, the deposited silver layer is uniformly distributed, the multi-arc deposition roughness can be controlled within Ra0.8, the uniformity of ultrathin silver layer thickness can be controlled within 10%, the ceramic filter has low insertion loss, the silver layer has high adhesion, and the surface of the ceramic filter is smooth. Attached Figure Description

[0031] Figure 1 These are the silver layer adhesion test diagrams for Examples 1-3 and Comparative Examples 1-5. Detailed Implementation

[0032] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the technical solutions of the present invention will be described in detail below with specific embodiments.

[0033] Example 1

[0034] This embodiment provides a method for preparing a 5G ceramic dielectric filter film material, the method comprising the following steps:

[0035] S1. Polish the surface of the ceramic substrate with 4000-mesh fine sand, then ultrasonically clean it with anhydrous ethanol for 20 minutes to remove residual abrasive and stains. Dry the cleaned ceramic substrate at 150℃ for 10 minutes for later use.

[0036] S2. Place the dried ceramic substrate from step S1 onto the workpiece disk. Move the workpiece disk to the position corresponding to the high-energy pulsed ion source and start its rotation at 5 r / min. High-energy nickel particles are injected to form a transition layer on the surface of the ceramic substrate. The thickness of the transition layer is 10 nm. The trigger frequency of the nickel injection source is 5 Hz; the high voltage is 6 kV; the arc voltage is 60 V; the beam current is 5 mA; and the injection time is 20 min.

[0037] S3. The workpiece disk rotates to the copper plating position and starts its rotation at 5 r / min. The initial bias voltage of the workpiece disk is set to 800V, with an 80% duty cycle. The arc current is set to 80A, and the magnetic filtering magnetic field is set to 1A. After 60 seconds, the bias power supply is set to 600V and held for 60 seconds. Then, the bias power supply is set to 400V and held for 60 seconds. Finally, the voltage is adjusted to 100V, and the duty cycle is adjusted to 10%. A copper layer is deposited on the transition layer for 20 minutes using the magnetic filtering cathode plasma deposition method to obtain the connection layer, which has a copper layer thickness of approximately 200nm.

[0038] S4: The workpiece is rotated to the silver plating position, and silver is deposited by multi-arc ion plating to obtain a surface metallic silver layer. The rotation is started at a speed of 5-10 r / min, argon gas is introduced into the vacuum chamber at 50 sccm, the arc current is 80A, the coil pulse magnetic field is 1A, the bias voltage is 0V, the deposition time is 1h, and the silver layer thickness is about 2μm, thus obtaining the 5G ceramic dielectric filter film material a1.

[0039] Example 2

[0040] This embodiment provides a method for preparing a 5G ceramic dielectric filter film material, the method comprising the following steps:

[0041] S1. Polish the surface of the ceramic substrate with 4000-mesh fine sand, then perform ultrasonic cleaning with alcohol for 25 minutes to remove residual abrasive and stains. Dry the cleaned ceramic substrate at 200℃ for 12 minutes for later use.

[0042] S2. Place the dried ceramic substrate from step S1 onto the workpiece disk. Move the workpiece disk to the position corresponding to the high-energy pulsed ion source and start its rotation at 8 r / min. High-energy nickel particles are injected to form a transition layer on the surface of the ceramic substrate. The thickness of the transition layer is 50 nm. The trigger frequency of the nickel injection source is 8 Hz; the high voltage is 7 kV; the arc voltage is 75 V; the beam current is 7 mA; and the injection time is 30 min.

[0043] S3. The workpiece disk rotates to the copper plating position and starts its rotation at 10 r / min. The initial bias voltage of the workpiece disk is set to 800V, with an 80% duty cycle. The arc current is set to 100A, and the magnetic filtering magnetic field is set to 2A. After 60 seconds, the bias voltage is set to 600V and held for 60 seconds. Then, the bias voltage is set to 400V and held for 60 seconds. Finally, the voltage is adjusted to 100V, and the duty cycle is adjusted to 10%. A copper layer is deposited on the transition layer for 20 minutes using magnetic filtering cathode plasma deposition to obtain the bonding layer, which has a copper layer thickness of approximately 200nm.

[0044] S4: The workpiece is rotated to the silver plating position, where multi-arc ion plating is performed to deposit silver and obtain a surface metallic silver layer. The specific steps are as follows: Start the rotation at a speed of 5-10 r / min, and introduce argon gas at 150 sccm into the vacuum chamber to achieve a vacuum level of 5 × 10⁻⁶. -2 Pa, arc current of 100A, coil pulse magnetic field of 3A, bias voltage of 0V, deposition time of 3h, resulting in a silver layer thickness of 6μm, which is the 5G ceramic dielectric filter film material a2.

[0045] Example 3

[0046] This embodiment provides a method for preparing a 5G ceramic dielectric filter film material, the method comprising the following steps:

[0047] S1. Polish the surface of the ceramic substrate with 4000-mesh fine sand, then ultrasonically clean it with anhydrous ethanol for 30 minutes to remove residual abrasive and stains. Dry the cleaned ceramic substrate at 300℃ for 12 minutes for later use.

[0048] S2. Place the dried ceramic substrate from step S1 onto the workpiece disk. Move the workpiece disk to the position corresponding to the high-energy pulsed ion source and start its rotation at 10 r / min. High-energy nickel particles are injected to form a transition layer on the surface of the ceramic substrate. The thickness of the transition layer is 100 nm. The trigger frequency of the nickel injection source is 10 Hz; the high voltage is 8 kV; the arc voltage is 90 V; the beam current is 8 mA; and the injection time is 40 min.

[0049] S3. The workpiece disk rotates to the copper plating position and starts its rotation at 10 r / min. The initial bias voltage of the workpiece disk is set to 800V, with an 80% duty cycle. The arc current is set to 120A, and the magnetic filtering magnetic field is set to 5A. After 60 seconds, the bias voltage is set to 600V and held for 60 seconds. Then, the bias voltage is set to 400V and held for 60 seconds. Finally, the voltage is adjusted to 100V, and the duty cycle is adjusted to 10%. A copper layer is deposited on the transition layer for 20 minutes using the magnetic filtering cathode plasma deposition method to obtain the bonding layer, which has a copper layer thickness of approximately 200nm.

[0050] S4: The workpiece is rotated to the silver plating position, and silver is deposited by multi-arc ion plating to obtain a surface metallic silver layer. The specific steps are as follows: start the rotation, the speed is 5-10 r / min, argon gas is introduced into the vacuum chamber at 300 sccm, the arc current is 120A, the coil pulse magnetic field is 5A, the bias voltage is 0V, the deposition time is 5h, and the silver layer thickness is 8μm, which is the 5G ceramic dielectric filter film material a3.

[0051] Comparative Example 1

[0052] This comparative example provides a method for preparing a 5G ceramic dielectric filter film material, the method comprising the following steps:

[0053] S1. Polish the surface of the ceramic substrate with 4000-mesh fine sand, then ultrasonically clean it with anhydrous ethanol for 25 minutes to remove residual abrasive and stains. Dry the cleaned ceramic substrate at 200℃ for 12 minutes for later use.

[0054] S2. Place the dried ceramic substrate from step S1 onto the workpiece disk. Move the workpiece disk to the position corresponding to the high-energy pulsed ion source and start its rotation at 8 r / min. High-energy nickel particles are injected to form a transition layer on the surface of the ceramic substrate. The trigger frequency of the nickel injection source is 8 Hz; the high voltage is 7 kV; the arc voltage is 75 V; the beam current is 7 mA; and the injection time is 30 min.

[0055] S3. The workpiece is rotated to the copper plating position. Magnetron sputtering is then used with a copper target to prepare a copper layer on the ion implantation transition layer surface. The copper target used has a purity of 99.99%, and the vacuum degree is 6 × 10⁻⁶. -4 The gas introduced was argon, the working pressure was 0.1 Pa, the sputtering power was 2100 W, the copper layer deposition time was 20 min, and the thickness of the copper layer obtained was 2 μm.

[0056] S4: The workpiece is rotated to the silver plating position for multi-arc ion plating to deposit a silver layer on the surface. The specific steps are as follows: start the rotation, with a speed of 5 r / min, introduce argon gas into the vacuum chamber at 150 sccm, set the arc current to 100 A, the coil pulse magnetic field to 3 A, the bias voltage to 0 V, and the deposition time to 3 h. The resulting silver layer thickness is 6 μm, which is the 5G ceramic dielectric filter film material b1.

[0057] Comparative Example 2

[0058] This comparative example provides a method for preparing a 5G ceramic dielectric filter film material, the method comprising the following steps:

[0059] S1. Polish the surface of the ceramic substrate with 4000-mesh fine sand, then ultrasonically clean it with anhydrous ethanol for 25 minutes to remove residual abrasive and stains. Dry the cleaned ceramic substrate at 200℃ for 12 minutes for later use.

[0060] S2. Place the dried ceramic substrate from step S1 onto the workpiece disk. Move the workpiece disk to the position corresponding to the high-energy pulsed ion source and start its rotation at 8 r / min. High-energy nickel particles are injected to form a transition layer on the surface of the ceramic substrate. The trigger frequency of the nickel injection source is 8 Hz; the high voltage is 7 kV; the arc voltage is 75 V; the beam current is 7 mA; and the injection time is 30 min.

[0061] S3. The workpiece disk rotates to the copper plating position and starts its rotation at 10 r / min. The initial bias voltage of the workpiece disk is set to 800V, with an 80% duty cycle. The arc current is set to 100A, and the magnetic filtering magnetic field is set to 2A. After 60 seconds, the bias power supply is set to 600V and held for 60 seconds. Then, the bias power supply is set to 400V and held for 60 seconds. Finally, the voltage is adjusted to 100V, and the duty cycle is adjusted to 10%. A copper layer is deposited on the transition layer for 20 minutes using the magnetic filtering cathode plasma deposition method to obtain the connection layer, which has a copper layer thickness of approximately 200nm.

[0062] S4. The workpiece is rotated to the silver plating position. Under the conditions of pulse bias voltage of 30kV and arc current of 60A, silver is deposited on the connection layer using high-power pulse bias voltage technology to obtain a surface metal silver layer with a thickness of 6μm and a time of 10h, which is the 5G ceramic dielectric filter film material b2.

[0063] Comparative Example 3

[0064] Referring to Example 2, unlike Example 2, in step S2 of this comparative example, copper particles are injected using a high-energy pulsed ion source to obtain a transition layer. The other steps are the same as in Example 2, resulting in the 5G ceramic dielectric filter film material b3.

[0065] Comparative Example 4

[0066] Referring to Example 3, unlike Example 2, in step S3 of this comparative example, silver is deposited on the transition layer using a magnetic filter cathode vacuum arc to obtain a connecting layer. The other steps are the same as in Example 2, resulting in 5G ceramic dielectric filter film material b4.

[0067] Comparative Example 5

[0068] Referring to Example 2, unlike Example 2, in step S2 of this comparative example, copper particles were implanted using a high-energy pulsed ion source to obtain a transition layer. In step S3 of this comparative example, magnetron sputtering was initially used with a copper target to prepare a copper layer on the surface of the ion-implanted transition layer. The purity of the copper target used was 99.99%, and the vacuum degree was 6 × 10⁻⁶. -4 Pa, the gas introduced is argon, the working gas pressure is 0.1 Pa, the sputtering power is 2100 W, the copper layer deposition time is 20 min, the thickness of the copper layer is 2 μm, the rest is the same as in Example 2, and the 5G ceramic dielectric filter film material b5 is obtained.

[0069] Test case

[0070] The ceramic filter film materials prepared in Examples 1-3 and the film materials in Comparative Examples 1-5 were subjected to the following tests. The 5G ceramic filter film materials prepared in Examples 1 and 4 underwent two tests to assess the adhesion of the silver layer, while the other film materials underwent one test to assess the adhesion of the silver layer. The specific experimental results are as follows. Figure 1 As shown in Table 1:

[0071] Table 1

[0072]

[0073]

[0074] As shown in Table 1, the 5G ceramic filter film material prepared in Examples 1-3 is formed by depositing various metals into the ceramic substrate through different ion beam sputtering processes in each step, resulting in a highly dense, low-roughness, and uniformly thick high-metallized silver layer. The insertion loss of the film material results in good bonding between the substrate ceramic layer and the metal silver layer, high silver layer adhesion, and the silver layer adhesion increases with the increase of the silver layer thickness.

[0075] From Table 1 and Figure 1 The results show that the adhesion of the silver layer in Examples 1-3 and Comparative Examples 2 and 4 is not significantly different. However, comparing the data of Examples 2, 3, and 5, it can be seen that the adhesion of the silver layer in Comparative Examples 3 and 5 is much smaller than that in Example 3. This may be because the transition layer in Comparative Example 3 is a copper layer, resulting in a large roughness in the outer layer, thus leading to low adhesion between the outer silver layer and the ceramic substrate. In Comparative Example 5, the transition layer is a copper layer, and the connecting layer is obtained by magnetron sputtering, which prevents the formation of a dense copper layer. The copper layer is thin, therefore, the adhesion of the silver layer in Comparative Example 5 is the smallest.

[0076] Comparing the data of Example 2 and Comparative Example 1, it can be seen that step S3 in Example 2 uses magnetic filtering cathode plasma deposition, which can provide a high-density copper layer on the transition layer. The high-density copper layer can reduce the insertion loss of the ceramic filter. However, the magnetron sputtering method used in step S3 of Comparative Example 1 cannot form a high-density copper layer. Therefore, the insertion loss of the ceramic filter prepared in Comparative Example 1 is much larger than that in Example 2.

[0077] Comparing the data of Example 2 and Comparative Example 2, it can be seen that step S4 of Example 2 uses multi-arc ion plating to deposit silver, which can make the deposited silver layer uniformly distributed, and the roughness of multi-arc deposition can be controlled within Ra0.8. The uniformity of the ultrathin silver layer thickness can be controlled within 10%, and its 5G ceramic filter has low insertion loss. In contrast, the power pulse bias technology used in step S4 of Comparative Example 2 results in a large roughness of the silver layer and low uniformity of the silver layer thickness, which leads to a much larger insertion loss of the 5G ceramic filter than that of Example 2.

[0078] Comparing the data of Example 2 and Comparative Examples 3 and 4, it can be seen that although the material film obtained in Comparative Examples 3 and 4 has the same thickness as that in Example 2 because the transition layer of Comparative Example 3 is a copper layer and the connecting layer of Comparative Example 4 is a silver layer, the surface metal layer obtained in Comparative Examples 3 and 4 has a large roughness and large particles. As a result, the dielectric loss of the final product is much greater than that of Example 2.

[0079] This invention ensures the quality of the material deposition by precisely controlling the parameters of the metal layers injected using different methods at each step, as well as the amount of metal deposited in each layer, thus meeting the performance requirements of 5G ceramic dielectric filter film materials.

[0080] The embodiments provided by the present invention have been described in detail above. Specific examples have been used to illustrate the principles and implementation methods of the present invention, and the descriptions of the embodiments above are only for the purpose of helping to understand the core ideas of the present invention. It should be noted that those skilled in the art can make several improvements and modifications to the present invention without departing from the principles of the present invention, and these improvements and modifications also fall within the protection scope of the claims of the present invention.

Claims

1. A method of making a 5G ceramic dielectric filter material, characterized by, The method comprises the following steps: S1, sandblasting or polishing treatment is performed on the surface of the ceramic substrate, then the treated ceramic substrate is immersed in an organic solvent for ultrasonic cleaning, and the cleaned ceramic substrate is dried for standby; S2, first metal ions are injected onto the surface of the ceramic substrate treated in step S1 by high-energy pulse ion implantation method using a first metal target to form a transition layer; S3, a second metal is deposited on the transition layer prepared in step S2 by magnetic filter cathode vacuum arc deposition using a second metal target to form a connecting layer; S4, a third metal is deposited on the connecting layer prepared in step S3 by multi-arc ion plating method using a third metal target to form a surface metal layer, thereby obtaining the 5G ceramic dielectric filter material; The first metal is nickel, the second metal is copper, and the third metal is silver, In the high-energy pulse ion implantation in step S2, the rotation speed of the ceramic substrate is 5-10 r / min, the trigger frequency of the first metal source is 1-10 hz, the injection voltage is 6-8 KV, the arc voltage is 60-90 V, the beam current is 5-8 mA, and the injection time is 20-40 min, In the magnetic filter cathode vacuum arc deposition in step S3, the rotation speed of the ceramic substrate is 5-10 r / min, the bias voltage is 100-800 V, the duty cycle is 10%-80%, the arc current is 80-120 A, the current of the magnetic filter magnetic field is 1-2 A, and the deposition time is 20-30 min, The step S4 is carried out by multi-arc ion plating method, wherein the rotation speed of the ceramic substrate is 5-10 r / min, the vacuum degree of the vacuum chamber is 1-9×10 -2 Pa, the arc current is 80-120 A, the coil pulse magnetic field is 1-5 A, the bias voltage is 0 V, and the deposition time is 1-5 h.

2. The method of making a 5G ceramic dielectric filter material of claim 1, wherein, The organic solvent in step S1 is ethanol, and the ultrasonic cleaning time is 20-30 min.

3. The method of making a 5G ceramic dielectric filter material of claim 1, wherein, The drying temperature in step S1 is 150-300 DEG C, and the time is 10-15 min.

4. A 5G ceramic dielectric filter material prepared according to the method of any one of claims 1 to 3, characterized in that, The 5G ceramic dielectric filter material is a four-layer composite structure, which comprises, from inside to outside, a ceramic substrate, a transition layer, a connecting layer, and a surface metal layer.

5. The 5G ceramic dielectric filter material of claim 4, wherein, The deposition thickness of the transition layer is 10-100 nm, the deposition thickness of the connecting layer is 100-300 nm, and the deposition thickness of the surface metal layer is 1-20 μm.

6. The 5G ceramic dielectric filter material of claim 5, wherein, The deposition thickness of the surface metal layer is 6-10 μm.

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