Wide-bandgap perovskite solar cells, perovskite / crystalline silicon tandem cells, and electrical devices

Abstract

The present application relates to a wide-bandgap perovskite solar cell, a perovskite / silicon heterojunction tandem solar cell, and an electrical device. The wide-bandgap perovskite solar cell includes a first electrode layer, an electron transport layer, a passivation layer, a perovskite light-absorbing layer, a hole transport layer, a buffer layer, and a second electrode layer stacked in sequence; the material of the passivation layer includes a self-assembled monolayer material and an additive, and the additive includes an organic ammonium salt containing a C6-C10 aromatic ring or a 5-10 membered heteroaromatic ring. The wide-bandgap perovskite solar cell has high cell efficiency and can reduce device hysteresis at the same time.

Description

Technical Field

[0001] The present application relates to the technical field of solar cells, and particularly to a wide-bandgap perovskite solar cell, a perovskite / silicon tandem cell, and an electrical device. Background Art

[0002] At present, the efficiency of crystalline silicon cells can reach up to 27.2%, which is close to its theoretical limit (29%). In order to further improve the efficiency of the cells, more and more attention has been focused on the research and development of perovskite / silicon tandem cells. Currently, the highest efficiency that can be achieved is 33.9%, which is a feasible solution to break through the theoretical limit of the efficiency of single-junction crystalline silicon cells.

[0003] The perovskite / silicon tandem cell requires a wide-bandgap perovskite solar cell with a bandgap of 1.65 eV to 1.75 eV, and the device structure can be divided into PIN type and NIP type according to the different structures of the wide-bandgap perovskite solar cell. High-efficiency NIP-type perovskite / silicon tandem cells usually use silicon with a textured surface structure as the bottom cell, and the wide-bandgap perovskite light-absorbing layer is deposited on the electron transport layer. Traditional solution-processed electron transport layers (such as titanium dioxide or tin dioxide, etc.) are difficult to be uniformly deposited on the silicon bottom cell with a textured surface structure. Although niobium oxide deposited by magnetron sputtering can be used as an electron transport layer to uniformly cover the textured silicon, the interfacial conductivity of niobium oxide is poor. Usually, a self-assembled monolayer (such as fullerene or its derivatives) is required as an interfacial layer between the niobium oxide electron transport layer and the perovskite light-absorbing layer to improve the interfacial electron extraction of niobium oxide and reduce the carrier recombination at the interface. However, there is also relatively serious non-radiative recombination at the interface between the self-assembled monolayer represented by fullerene or its derivatives and the perovskite light-absorbing layer, which has been widely reported in PIN-type perovskite solar cells. In PIN-type perovskite solar cells, by passivating the interface contact between fullerene or its derivatives and perovskite, the device efficiency can be significantly improved. However, in NIP-type perovskite solar cells, the self-assembled monolayer of fullerene or its derivatives is arranged at the buried bottom interface of the perovskite light-absorbing layer, and it is difficult to passivate it by the passivation method of PIN-type perovskite solar cells. The energy loss at the contact interface between fullerene or its derivatives and perovskite is large, the battery efficiency is low, and at the same time, it is easy to cause a large hysteresis. Summary of the Invention

[0004] Based on this, the present application provides a wide-bandgap perovskite solar cell with high battery efficiency and at the same time can reduce the device hysteresis, as well as a perovskite / silicon tandem cell and an electrical device.

[0005] The first aspect of the present application provides a wide-bandgap perovskite solar cell, including a first electrode layer, an electron transport layer, a passivation layer, a perovskite light-absorbing layer, a hole transport layer, a buffer layer, and a second electrode layer stacked in sequence;

[0006] The material of the passivation layer includes self-assembled monolayer material and an additive, and the additive includes an organic ammonium salt containing a C6-C10 aromatic ring or a 5-10 membered heteroaromatic ring.

[0007] In some embodiments, the additive includes one or more of phenethylamine hydrohalide, phenethylamine hydrosulfonate, phenethylamine formate, phenethylamine tetrafluoroborate, imidazole hydrohalide, imidazole hydrosulfonate, imidazole formate, imidazole tetrafluoroborate, 2-(4-fluorophenyl)ethylamine hydrohalide, 2-(4-fluorophenyl)ethylamine hydrosulfonate, 2-(4-fluorophenyl)ethylamine formate, and 2-(4-fluorophenyl)ethylamine tetrafluoroborate.

[0008] In some embodiments, the self-assembled monolayer material includes one or more of fullerene or its derivatives, anthraquinone or its derivatives, and naphthalenediimide or its derivatives.

[0009] In some embodiments, the mass percentage of the additive in the self-assembled monolayer material is 5% - 20%.

[0010] In some embodiments, the material of the electron transport layer includes niobium oxide.

[0011] In some embodiments, the wide-bandgap perovskite solar cell has one or more of the following characteristics:

[0012] (1) The perovskite light-absorbing layer includes a wide-bandgap perovskite material, and the general formula of the wide-bandgap perovskite material is AB(X n Y 1-n ) 3 , where A is a monovalent cation, B is a divalent metal ion, X and Y are each independently a halogen anion, and 0 ≤ n ≤ 1;

[0013] (2) The hole transport layer material includes one or both of PTAA and Spiro-TTB;

[0014] (3) The material of the buffer layer includes one or both of tungsten oxide and ALD V 2 O 5 .

[0015] In a second aspect of the present application, a perovskite / silicon heterojunction solar cell is provided, including a silicon heterojunction cell and a wide-bandgap perovskite cell arranged in a stack. The silicon heterojunction cell is an NIP type silicon heterojunction cell, including a metal electrode on the n-type side and a composite layer on the p-type side; the wide-bandgap perovskite cell includes an electron transport layer, a passivation layer, a perovskite light-absorbing layer, a hole transport layer, a buffer layer, a transparent electrode layer, a metal grid line, and an antireflection layer stacked in sequence on the surface of the composite layer;

[0016] The material of the passivation layer includes self-assembled monolayer material and additives, and the additives include organic ammonium salts containing C6-C10 aromatic rings or 5-10 membered heteroaromatic rings.

[0017] In some embodiments, the passivation layer has one or more of the following characteristics:

[0018] (1) The additives include one or more of phenethylamine hydrohalide, phenethylamine hydrosulfonate, phenethylamine formate, phenethylamine tetrafluoroborate, imidazole hydrohalide, imidazole hydrosulfonate, imidazole formate, imidazole tetrafluoroborate, 2-(4-fluorophenyl)ethylamine hydrohalide, 2-(4-fluorophenyl)ethylamine hydrosulfonate, 2-(4-fluorophenyl)ethylamine formate, and 2-(4-fluorophenyl)ethylamine tetrafluoroborate;

[0019] (2) The self-assembled monolayer material includes one or more of fullerenes or their derivatives, anthraquinones or their derivatives, and naphthalenediimides or their derivatives;

[0020] (3) The mass percentage of the additives in the self-assembled monolayer material is 5% - 20%.

[0021] In some embodiments, the perovskite / crystalline silicon tandem solar cell has one or more of the following characteristics:

[0022] (1) A textured silicon substrate is provided on the p-type side of the crystalline silicon cell;

[0023] (2) The material of the electron transport layer includes niobium oxide;

[0024] (3) The perovskite light-absorbing layer includes a wide-bandgap perovskite material, and the general formula of the wide-bandgap perovskite material is AB(X n Y 1-n ) 3 , where A is a monovalent cation, B is a divalent metal ion, X and Y are each independently a halogen anion, and 0 ≤ n ≤ 1;

[0025] (4) The material of the composite layer includes one or more of tunneling junctions, IZO, ITO, IWO, and IZrO;

[0026] (5) The hole transport layer material includes one or both of PTAA and Spiro-TTB;

[0027] (6) The material of the buffer layer includes one or both of tungsten oxide and ALD V 2 O 5 ;

[0028] (7) The material of the transparent electrode layer includes one or more of ITO, IZO, IWO, and IZrO;

[0029] (8) The material of the antireflection layer includes one or more of MgF 2 , LiF, and SiO 2 ;

[0030] (9) The material of the metal grid line includes one or more of Ag, Au, and Cu.

[0031] In the third aspect of the present application, an electrical device is provided, including the wide-bandgap perovskite solar cell described in the first aspect or the perovskite / silicon heterojunction solar cell described in the second aspect.

[0032] In the above-mentioned wide-bandgap perovskite solar cell, a bulky organic ammonium salt containing a C6-C10 aromatic ring or a 5-10 membered heteroaromatic ring is added as an additive to the self-assembled monolayer passivation layer between the electron transport layer and the perovskite light-absorbing layer, which can improve the conductivity and electron extraction ability of the electron transport layer, especially the niobium oxide electron transport layer, while reducing the non-radiative recombination at the interface between the self-assembled monolayer passivation layer and the perovskite light-absorbing layer, improving the interface contact, thereby effectively improving the cell efficiency and reducing the device hysteresis. Specific Embodiments

[0033] The wide-bandgap perovskite solar cell, the perovskite / silicon heterojunction solar cell, and the electrical device of the present application are further described in detail below with reference to specific embodiments. The present application can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, these embodiments are provided to make the understanding of the disclosed content of the present application more thorough and comprehensive.

[0034] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those skilled in the technical field to which this application belongs. The terms used in the description of the present application herein are only for the purpose of describing specific embodiments and are not intended to limit the present application.

[0035] As used herein, "one or more" means any one, any two, or any two or more of the listed items.

[0036] In the present application, "the first aspect", "the second aspect", "the third aspect", etc. are only for descriptive purposes and should not be construed as indicating or implying relative importance or quantity, nor should they be construed as implicitly indicating the importance or quantity of the indicated technical features. Moreover, "the first", "the second", "the third", etc. only serve the purpose of non-exhaustive enumeration and description and should be understood not to constitute a closed limitation on quantity.

[0037] In this application, among the technical features described in an open-ended manner, it includes a closed technical solution composed of the listed features, and also includes an open technical solution containing the listed features.

[0038] In this application, when it comes to numerical ranges, unless otherwise specified, the above numerical ranges are considered continuous, and include the minimum and maximum values of the range, as well as each value between such minimum and maximum values. Further, when the range refers to integers, it includes each integer between the minimum and maximum values of the range. In addition, when multiple ranges are provided to describe features or characteristics, these ranges can be combined. In other words, unless otherwise specified, all ranges disclosed herein should be understood to include any and all sub-ranges subsumed therein.

[0039] In this application, for the percentage content involved, unless otherwise specified, for solid-liquid mixtures and solid-solid mixtures, it refers to the mass percentage, and for liquid-liquid mixtures, it refers to the volume percentage.

[0040] In this application, for the percentage concentration involved, unless otherwise specified, it refers to the final concentration. The final concentration refers to the proportion of the added component in the system after adding this component.

[0041] In this application, for the temperature parameter, unless otherwise specified, it allows both constant temperature treatment and treatment within a certain temperature range. The constant temperature treatment allows the temperature to fluctuate within the accuracy range controlled by the instrument.

[0042] In this application, room temperature generally refers to 4°C to 30°C, and preferably refers to 20 ± 5°C.

[0043] In this application, the term "aromatic ring" refers to an aromatic hydrocarbon group derived by removing one hydrogen atom from an aromatic ring compound, which can be a monocyclic aryl group, or a fused-ring aryl group, or a polycyclic aryl group. For polycyclic ring species, at least one is an aromatic ring system. For example, "C6 - C10 aromatic ring" refers to an aryl group containing 6 to 10 carbon atoms, and each occurrence can independently be a C6 aryl group, a C7 aryl group, a C8 aryl group, a C9 aryl group, or a C10 aryl group. Suitable examples include but are not limited to: benzene, biphenyl, naphthalene, anthracene, phenanthrene, pyrene, triphenylene, and their derivatives.

[0044] In the present application, the term "heteroaromatic ring" means that at least one carbon atom in the aryl group is replaced by a non-carbon atom, and the non-carbon atom can be an N atom, an O atom, an S atom, etc. For example, "5- to 10-membered heteroaromatic ring" means a heteroaromatic ring containing 5 to 10 ring atoms, and each time it appears, it can independently be a 5-membered heteroaromatic ring, a 6-membered heteroaromatic ring, a 7-membered heteroaromatic ring, an 8-membered heteroaromatic ring, a 9-membered heteroaromatic ring, or a 10-membered heteroaromatic ring. Suitable examples include, but are not limited to: furyl, benzofuryl, thienyl, benzothienyl, pyrrolyl, pyrazolyl, triazolyl, imidazolyl, oxazolyl, oxadiazolyl, thiazolyl, tetrazolyl, indolyl, carbazolyl, pyrroloimidazolyl, pyrrolopyrrolyl, thiophenopyrrolyl, thiophenothiophenyl, furanopyrrolyl, furanofuryl, thiophenofuryl, benzoisoxazolyl, benzoisothiazolyl, benzimidazolyl, pyridyl, pyrazinyl, pyridazinyl, pyrimidinyl, triazinyl, quinolinyl, isoquinolinyl, phthalazinyl, quinoxalinyl, phenanthridinyl, peridinyl, quinazolinyl, and quinazolinone group.

[0045] In some examples of the present application, a wide-bandgap perovskite solar cell is provided, which includes a first electrode layer, an electron transport layer, a passivation layer, a perovskite light-absorbing layer, a hole transport layer, a buffer layer, and a second electrode layer stacked in sequence; the material of the passivation layer includes a self-assembled monolayer material and an additive, and the additive includes an organic ammonium salt containing a C6-C10 aromatic ring or a 5- to 10-membered heteroaromatic ring.

[0046] Without limitation, the wide-bandgap perovskite solar cell can be of the NIP type or the PIN type. At the same time, the above passivation layer solution is particularly suitable for the NIP-type wide-bandgap perovskite solar cell.

[0047] In some of these examples, the additive includes one or more of phenethylamine hydrohalide, phenethylamine hydrosulfonate, phenethylamine formate, phenethylamine tetrafluoroborate, imidazole hydrohalide, imidazole hydrosulfonate, imidazole formate, imidazole tetrafluoroborate, 2-(4-fluorophenyl)ethylamine hydrohalide, 2-(4-fluorophenyl)ethylamine hydrosulfonate, 2-(4-fluorophenyl)ethylamine formate, and 2-(4-fluorophenyl)ethylamine tetrafluoroborate.

[0048] In some of these examples, the self-assembled monolayer material includes one or more of fullerene or its derivatives, anthraquinone or its derivatives, and naphthalenediimide or its derivatives.

[0049] In some of these examples, the mass percentage of the additive in the self-assembled monolayer material is 5% to 20%. Specifically, the mass percentage of the additive in the self-assembled monolayer material includes, but is not limited to, 5%, 8%, 10%, 12%, 15%, 20%, or the range between any two of the foregoing. Further, the mass percentage of the additive in the self-assembled monolayer material is 8% to 12%.

[0050] In some of these examples, the material of the electron transport layer includes niobium oxide. When niobium oxide is used as the material of the electron transport layer, in combination with the above passivation layer scheme, the electron transport performance can be effectively improved and the battery efficiency can be enhanced.

[0051] In some of these examples, the perovskite light-absorbing layer includes a wide-bandgap perovskite material, and the general formula of the wide-bandgap perovskite material is AB(X n Y 1-n ) 3 , where A is a monovalent cation, B is a divalent metal ion, X and Y are each independently a halogen anion, and 0 ≤ n ≤ 1. Without limitation, the wide-bandgap perovskite material includes Cs 0.05 FA 0.8 MA 0.15 Pb(I 0.75 Br 0.25 ) 3 , Cs 0.25 FA 0.75 Pb(I 0.75 Br 0.25 ) 3 , Cs 0.15 FA 0.65 MA 0.2 Pb(I 0.8 Br 0.2 ) 3 and Cs 0.05 (FA 0.77 MA 0.23 ) 0.95 Pb(I 0.77 Br 0.23 ) 3 or more of them. It can be understood that the perovskite light-absorbing layer generally formulates the precursors of each element according to the ratio of the general formula, and the deposition method can be solution processing such as spin coating, blade coating, or slot die coating. Without limitation, the thickness of the perovskite light-absorbing layer can be 0.5 μm to 3 μm.

[0052] In some of these examples, the wide-bandgap perovskite solar cell includes, in sequence, a first electrode layer (transparent electrode layer, such as transparent conductive glass, ITO or FTO glass), an electron transport layer (niobium oxide), a passivation layer, a perovskite light-absorbing layer, a hole transport layer, a buffer layer, and a second electrode layer (metal electrode layer). Without limitation, the material of the hole transport layer includes one or both of PTAA and Spiro-TTB, and a dopant, such as F4TCNQ, can be appropriately added. The buffer layer material includes one or both of tungsten oxide and ALD V 2 O 5 one or both of them.

[0053] Some other examples of the present application provide a perovskite / silicon heterojunction solar cell, including a silicon heterojunction cell and a wide-bandgap perovskite cell arranged in a stack. The silicon heterojunction cell is an NIP-type silicon heterojunction cell, including a metal electrode on the n-type side and a composite layer on the p-type side; the wide-bandgap perovskite cell includes, in sequence, an electron transport layer, a passivation layer, a perovskite light-absorbing layer, a hole transport layer, a buffer layer, a transparent electrode layer, a metal grid line, and an antireflection layer laminated on the surface of the composite layer; the material of the passivation layer includes a self-assembled monolayer material and an additive, and the additive includes an organic ammonium salt containing a C6-C10 aromatic ring or a 5-10 membered heteroaromatic ring.

[0054] Without limitation, the perovskite / silicon heterojunction solar cell can be of the NIP type or the PIN type. Meanwhile, the above passivation layer solution is particularly applicable to the NIP-type perovskite / silicon heterojunction solar cell.

[0055] Without limitation, the silicon heterojunction cell is an HJT silicon heterojunction cell.

[0056] It can be understood that the electron transport layer, passivation layer, perovskite light-absorbing layer, hole transport layer, and buffer layer in the perovskite / silicon heterojunction solar cell are similar to those in the above wide-bandgap perovskite solar cell. The transparent electrode layer uses a magnetron sputtered transparent conductive electrode such as ITO, IZO, IZrO, IWO, etc., which will not be elaborated here.

[0057] Without limitation, the material of the metal grid line can be, for example, one or more of Ag, Au, and Cu.

[0058] In some of these examples, a textured silicon substrate is provided on the p-type side of the silicon heterojunction cell. For a silicon heterojunction cell provided with a textured silicon substrate, it is usually necessary to provide a magnetron sputtered deposited niobium oxide as the electron transport layer to achieve uniform coverage. On this basis, combined with the above passivation layer solution, the electron transport performance can be effectively improved and the cell efficiency can be enhanced.

[0059] Without limitation, the material of the composite layer includes one or more of a tunneling junction, IZO, ITO, IWO, and IZrO.

[0060] Without limitation, the material of the buffer layer includes tungsten oxide and ALD V 2 O 5 one or both of them.

[0061] Without limitation, the material of the transparent electrode layer includes one or more of ITO, IZO, IWO, and IZrO.

[0062] Without limitation, the material of the antireflection layer includes MgF 2 , LiF, and SiO 2 one or more of them.

[0063] Some other examples of the present application further provide an electrical device, including the wide-bandgap perovskite solar cell as described above or the perovskite / silicon heterojunction tandem solar cell as described above.

[0064] For the experimental parameters not specified in the following specific examples, priority should be given to the guidance provided in the present application document. It is also possible to refer to the experimental manuals in the art or other experimental methods known in the art, or the experimental conditions recommended by the manufacturers.

[0065] The raw materials and reagents involved in the following specific examples can be obtained commercially, or those skilled in the art can prepare them according to known means.

[0066] Example 1-1

[0067] This example is a wide-bandgap perovskite solar cell, and its preparation method is as follows:

[0068] (1) Dissolve the phenethylammonium bromide additive in isopropanol at a concentration of 20 mg / mL to prepare an additive solution; mix self-assembled C60 and chlorobenzene at a concentration of 1 mg / mL, heat and stir at 70 °C for 8 hours and then filter to prepare a self-assembled molecular layer solution. Take 5 μL of the additive solution and add it to 1 mL of the self-assembled molecular layer solution so that the mass percentage of phenethylammonium hydrobromide additive in self-assembled C60 is 10% to prepare a self-assembled molecular precursor solution;

[0069] (2) Magnetron sputter deposit a niobium oxide electron transport layer on ITO glass with a sheet resistance lower than 15 Ω, with a thickness of 40 nm;

[0070] The surface of the niobium oxide electron transport layer was treated with ozone for 15 minutes. The obtained substrate was transferred into a glove box, and the self-assembled molecular precursor solution prepared in step (1) was deposited. Static spin coating was used, with a spin coating speed of 3000 rpm and a time of 30 s. After that, annealing was carried out at 100 °C for 10 minutes to prepare a passivation layer with a thickness of 2 nm;

[0071] After cooling, Cs was deposited 0.05 MA 0.15 FA 0.8 PbI 0.75 Br 0.25 For the perovskite layer, a perovskite precursor solution was prepared according to the structural formula, with a concentration of 1.7 mol / L. 100 μL of the precursor solution was first spin-coated at 2000 rpm for 50 s, and then at 7000 rpm for 10 s. 150 μL of chlorobenzene was added dropwise in the last 8 s before the end. After that, heating was carried out at 100 °C for 20 minutes to prepare a perovskite light-absorbing layer with a thickness of 1000 nm;

[0072] On the surface of the perovskite light-absorbing layer, a hole transport layer of Spiro-TTB and a dopant F4TCNQ were thermally evaporated. The stable evaporation rates of Spiro-TTB and F4TCNQ were 0.8 Å / s and 0.2 Å / s respectively, with a thickness of 25 nm;

[0073] 8 nm of tungsten oxide and 100 nm of silver were thermally evaporated to complete the device preparation.

[0074] Examples 1-2

[0075] This example is a wide-bandgap perovskite solar cell, and its preparation method is the same as that of Example 1. The main difference is that imidazole hydroiodide is used to replace phenethylamine hydrobromide.

[0076] Examples 1-3

[0077] This example is a wide-bandgap perovskite solar cell, and its preparation method is the same as that of Example 1. The main difference is that 2-(4-fluorophenyl)ethylamine tetrafluoroborate is used to replace phenethylamine hydrobromide.

[0078] Examples 1-4

[0079] This example is a wide-bandgap perovskite solar cell, and its preparation method is the same as that of Example 1. The main difference is that during the preparation of the self-assembled molecular precursor solution, the mass percentage of phenethylamine hydrobromide additive in the self-assembled C60 is 5%.

[0080] Examples 1-5

[0081] This embodiment is a wide-bandgap perovskite solar cell, and its preparation method is the same as that of Embodiment 1. The main difference is that during the preparation of the self-assembled molecular precursor solution, the mass percentage of the phenethylamine hydrobromide additive in the self-assembled C60 is 20%.

[0082] Comparative Example 1-1

[0083] This comparative example is a wide-bandgap perovskite solar cell, and its preparation method is the same as that of Embodiment 1. The main difference is that no additive is added.

[0084] Comparative Example 1-2

[0085] This comparative example is a wide-bandgap perovskite solar cell, and its preparation method is the same as that of Embodiment 1. The main difference is that guanidine hydrobromide is used to replace phenethylamine hydrobromide.

[0086] Test Example 1

[0087] Test method: Test in a glove box with the glove box temperature at 25 °C, the water and oxygen content both less than 0.01 ppm. The J-V curve of the battery device is tested by a Keithley 2400 source meter, with the light source AM1.5G, 100 mW / cm 2 , and the light source intensity is calibrated by a standard silicon cell. The voltage test range is -0.1V - 1.3V, and the delay time is 50 ms.

[0088] Hysteresis index = (reverse scan efficiency - forward scan efficiency) / reverse scan efficiency. The larger the hysteresis index, the greater the forward and reverse scan hysteresis of the device.

[0089] The test results are shown in Table 1 below:

[0090] Table 1

[0091]

[0092] Embodiment 2-1

[0093] This embodiment is a perovskite / silicon heterojunction tandem solar cell, where the silicon heterojunction cell is an HJT silicon heterojunction cell, and the preparation method is as follows:

[0094] (1) Prepare the self-assembled molecular precursor solution in the same way as in Embodiment 1-1;

[0095] (2) Deposit 5 nm of transparent conductive oxide IZO on the p-type side of the HJT silicon heterojunction cell as a composite layer, screen-print a 5 μm thick silver electrode on the back side. According to the preparation process of the wide-bandgap perovskite solar cell in Embodiment 1-1, replace the ITO glass with the HJT silicon heterojunction cell deposited with the composite layer, and prepare an electron transport layer, a passivation layer, a perovskite light-absorbing layer, and a hole transport layer on it, and then prepare 10 nm of ALD V 2 O 5Buffer layer, 40nm transparent conductive electrode IZO, 200nm Ag grid line, and 100nm antireflection layer MgF 2 , the device fabrication is completed.

[0096] Comparative Example 2-1

[0097] This comparative example is a perovskite / silicon heterojunction solar cell. Its preparation method is the same as that of Example 2-1, with the main difference being that no additive is added.

[0098] Test Example 2

[0099] Test method: Test in a glove box at a temperature of 25°C with the water and oxygen content both less than 0.01 ppm. Test using a Keithley 2400 source meter with a light source of AM1.5G and 100mW / cm 2 , and the light source intensity is calibrated by a standard silicon cell. The voltage test range is -0.1V - 2.1V with a delay time of 50ms.

[0100] Hysteresis index = (reverse scan efficiency - forward scan efficiency) / reverse scan efficiency. The larger the hysteresis index, the greater the hysteresis of the device during forward and reverse scans.

[0101] The test results are shown in Table 2 below:

[0102] Table 2

[0103]

[0104] The technical features of the above-described embodiments can be combined arbitrarily. For the sake of brevity of description, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, it should be considered as falling within the scope described in this specification.

[0105] The above-described embodiments merely represent several implementation manners of the present application, which are convenient for understanding the technical solutions of the present application specifically and in detail. However, it should not be construed as a limitation to the scope of patent protection of the application. It should be noted that for those of ordinary skill in the art, without departing from the concept of the present application, several modifications and improvements can be made, and these all belong to the protection scope of the present application. It should be understood that the technical solutions obtained by those skilled in the art through logical analysis, reasoning, or limited experiments based on the technical solutions provided in the present application are all within the protection scope of the appended claims of the present application. Therefore, the protection scope of the patent of the present application should be subject to the content of the appended claims, and the specification can be used to explain the content of the claims.

Claims

1. A wide bandgap perovskite solar cell, characterized in that: It includes a first electrode layer, an electron transport layer, a passivation layer, a perovskite light absorption layer, a hole transport layer, a buffer layer and a second electrode layer stacked in sequence; The material of the passivation layer includes a self-assembled monolayer material and an additive; The additive is phenethylammonium bromide, imidazole hydroiodide or 2-(4-fluorophenyl)ethylamine hydrogen tetrafluoroborate; The self-assembled monolayer material is C60; The mass percentage of the additive in the self-assembled monolayer material is 10%; The material of the electron transport layer is niobium oxide; The material of the perovskite light absorbing layer is Cs 0.05 MA 0.15 FA 0.8 PbI 0.75 Br 0.25 ; The material of the hole transport layer includes Spiro-TTB and dopant F4TCNQ; The material of the buffer layer is tungsten oxide.

2. A perovskite / crystalline silicon tandem solar cell, characterized in that: It comprises a stacked crystalline silicon cell and a wide bandgap perovskite cell, wherein the crystalline silicon cell is a NIP type crystalline silicon cell, comprising a metal electrode on the n-type side and a composite layer on the p-type side; the wide bandgap perovskite cell comprises an electron transport layer, a passivation layer, a perovskite light absorption layer, a hole transport layer, a buffer layer, a transparent electrode layer, a metal grid line and an anti-reflection layer stacked in sequence on the surface of the composite layer; The material of the passivation layer includes a self-assembled monolayer material and an additive; The additive is phenethylammonium bromide, imidazole hydroiodide or 2-(4-fluorophenyl)ethylamine hydrogen tetrafluoroborate; The self-assembled monolayer material is C60; The mass percentage of the additive in the self-assembled monolayer material is 10%; The material of the electron transport layer is niobium oxide; The material of the perovskite light absorbing layer is Cs 0.05 MA 0.15 FA 0.8 PbI 0.75 Br 0.25 ; The material of the hole transport layer includes Spiro-TTB and dopant F4TCNQ; The material of the buffer layer is tungsten oxide.

3. The perovskite / crystalline silicon tandem solar cell according to claim 2, characterized in that: A textured silicon substrate is provided on the p-type side of the crystalline silicon cell.

4. The perovskite / crystalline silicon tandem solar cell according to claim 2, characterized in that: The material of the composite layer includes one or more of a tunnel junction, IZO, ITO, IWO and IZrO.

5. The perovskite / crystalline silicon tandem solar cell according to claim 2, characterized in that: The material of the transparent electrode layer includes one or more of ITO, IZO, IWO and IZrO.

6. The perovskite / crystalline silicon tandem solar cell according to claim 2, characterized in that: The material of the anti-reflection layer includes one or more of MgF2, LiF and SiO2.

7. The perovskite / crystalline silicon tandem solar cell according to claim 2, characterized in that: The material of the metal gate line includes one or more of Ag, Au and Cu.

8. An electrical device, characterized in that: It comprises the wide bandgap perovskite solar cell according to claim 1 or the perovskite / crystalline silicon tandem solar cell according to any one of claims 2 to 7.

Images