power module

Abstract

The application discloses a power module, comprising: a plurality of low-side transistors, a plurality of high-side transistors, a first gate drive chip and a second gate drive chip, the first gate drive chip drives the plurality of low-side transistors, the second gate drive chip drives the plurality of high-side transistors, the plurality of low-side transistors, the plurality of high-side transistors, the first gate drive chip and the second gate drive chip are mounted on a plurality of base islands of the power module; a lead frame, the lead frame has a plurality of pins; a plastic package, comprising opposite first and second side edges and opposite third and fourth side edges, the plastic package covers the lead frame, the plurality of low-side transistors, the plurality of high-side transistors, the first gate drive chip and the second gate drive chip; the plurality of pins of the lead frame respectively extend from the first, second, third and fourth side edges of the plastic package to the outside of the plastic package. The power module greatly reduces the overall volume of the module and significantly reduces the cost.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and in particular to a power module. Background Technology

[0002] An Intelligent Power Module (IPM) is a new type of high-power power electronic device.

[0003] Existing power modules all use the method of extending pins along two parallel sides of the plastic package. While meeting electrical spacing requirements, this method results in a large length of the corresponding two parallel sides. The connection between the base island and the lead-out port occupies a large area of ​​the lead frame, which is not efficient in utilizing the space within the plastic package. This makes the power module larger in size and more expensive, further limiting its application scenarios.

[0004] Furthermore, the bootstrap diode is not integrated inside the chip, resulting in a large area occupied by the lead frame. The power module and power factor correction module used for motor control are separate, resulting in low overall integration, insufficient space utilization, and high overall cost.

[0005] Therefore, how to design a highly integrated power module that makes full use of internal space and reduces size is an urgent problem to be solved at this stage. Summary of the Invention

[0006] In view of the above problems, the purpose of this application is to provide a new type of intelligent power module, which adopts a pin arrangement on all four sides and makes full use of the internal space of the power module to reduce its size and cost and meet user needs.

[0007] This invention provides a power module, comprising: a plurality of low-side transistors, a plurality of high-side transistors, a first gate driver chip and a second gate driver chip, wherein the first gate driver chip drives the plurality of low-side transistors and the second gate driver chip drives the plurality of high-side transistors; the plurality of low-side transistors, the plurality of high-side transistors, the first gate driver chip and the second gate driver chip are mounted on a plurality of base islands of the power module; a lead frame having a plurality of pins; a molding compound including opposing first and second sides and opposing third and fourth sides, the molding compound covering the lead frame, the plurality of low-side transistors, the plurality of high-side transistors, the first gate driver chip and the second gate driver chip; the plurality of pins of the lead frame extending from the first, second, third and fourth sides of the molding compound to the outside of the molding compound.

[0008] Optionally, the first gate driver chip is located near a first side of the molded package, the second gate driver chip is located near a second side of the molded package, and the plurality of low-side transistors and the plurality of high-side transistors are located between the first gate driver chip and the second gate driver chip.

[0009] Optionally, the plurality of low-side transistors are adjacent to the first gate driver chip, and the plurality of high-side transistors are adjacent to the second gate driver chip.

[0010] Optionally, the pins of the first gate driver chip are not led out from the second side of the molding compound; the pins of the second gate driver chip are not led out from the first side of the molding compound.

[0011] Optionally, at least some or all of the pins of the first gate driver chip are led out from the first side.

[0012] Optionally, at least some or all of the pins of the second gate driver chip are led out from the second side.

[0013] Optionally, in the three-phase drive circuit, the high-side drive floating power supply terminal and the high-side drive floating power supply ground terminal of the power module corresponding to at least one phase drive circuit are located on the second side.

[0014] Optionally, in the three-phase drive circuit, the high-side drive floating power supply terminal and the high-side drive floating power supply ground terminal of the power module corresponding to two phase drive circuits are located on the second side.

[0015] Optionally, only low-pressure pins are distributed on the first side of the encapsulation.

[0016] Optionally, low-pressure pins and high-pressure pins are distributed on the second, third, and fourth sides of the encapsulation body.

[0017] Optionally, the high-voltage pins of the power module include: a DC power supply positive terminal, a first phase output terminal, a second phase output terminal, a third phase output terminal, a first phase high-side drive floating power supply terminal, a first phase high-side drive floating power supply ground terminal, a second phase high-side drive floating power supply terminal, a second phase high-side drive floating power supply ground terminal, a third phase high-side drive floating power supply terminal, and a third phase high-side drive floating power supply ground terminal.

[0018] Optionally, the low-voltage pins of the power module include: a first-phase DC power supply negative terminal, a second-phase DC power supply negative terminal, a third-phase DC power supply negative terminal, a temperature signal output terminal, a low-side ground terminal, an overcurrent detection input terminal, a fault alarm signal output terminal, a low-side power supply terminal, a third-phase low-side signal input terminal, a second-phase low-side signal input terminal, a first-phase low-side signal input terminal, a high-side ground terminal, a high-side power supply terminal, a third-phase high-side signal input terminal, a second-phase high-side signal input terminal, and a first-phase high-side signal input terminal.

[0019] Optionally, the plurality of base islands includes a first base island, a second base island, a third base island, a fourth base island, a fifth base island, and a sixth base island; the plurality of low-side transistors includes a first low-side transistor, a second low-side transistor, and a third low-side transistor, with the first low-side transistor mounted on the first base island, the second low-side transistor mounted on the second base island, and the third low-side transistor mounted on the third base island; the plurality of high-side transistors includes a first high-side transistor, a second high-side transistor, and a third high-side transistor, all of which are mounted on the fourth base island; the first gate driver chip is mounted on the fifth base island, and the second gate driver chip is mounted on the sixth base island.

[0020] Optionally, the first base island, the second base island, the third base island, and the fourth base island are base islands on the lead frame.

[0021] Optionally, the first base island, the second base island, and the third base island respectively extend to the first phase output terminal, the second phase output terminal, and the third phase output terminal of the power module; the lead frame extends to the first phase DC power supply negative terminal, the second phase DC power supply negative terminal, and the third DC power supply negative terminal of the power module.

[0022] Optionally, the fourth base island extends a DC power supply positive terminal to the third and / or fourth side of the molding compound.

[0023] Optionally, the power module further includes a heat dissipation substrate, wherein the first base island, the second base island, the third base island, and the fourth base island are all located on the heat dissipation substrate.

[0024] Optionally, the heat dissipation substrate is a DBC ceramic substrate, an aluminum substrate, or a copper substrate.

[0025] Optionally, the lead frame extends to the first phase DC power supply negative terminal, the second phase DC power supply negative terminal, the third DC power supply negative terminal, the first phase output terminal, the second phase output terminal, and the third phase output terminal of the power module; the first phase output terminal, the second phase output terminal, and the third phase output terminal are respectively connected to the first base island, the second base island, and the third base island on the heat dissipation substrate.

[0026] Optionally, the lead frame extends to the third and / or fourth side of the molding compound to form the positive DC power supply terminal of the power module, and the positive DC power supply terminal is connected to the fourth base island on the heat dissipation substrate.

[0027] Optionally, one of the first phase output terminal, the second phase output terminal, and the third phase output terminal of the power module is located on a different side of the encapsulation from the other two.

[0028] Optionally, one of the first phase DC power supply negative terminal, the second phase DC power supply negative terminal, and the third phase DC power supply negative terminal of the power module is located on a different side of the encapsulation from the other two.

[0029] Optionally, the phase output terminals of any two phase drive circuits in the three-phase drive circuit are on the same side as the DC power supply negative terminal of any one phase drive circuit in the three-phase drive circuit, while the phase output terminals of the remaining one phase drive circuit and the DC power supply negative terminals of the remaining two phase drive circuits in the three-phase drive circuit are on opposite sides.

[0030] Optionally, the first gate driver chip is connected to the third phase low-side signal input terminal, the second phase low-side signal input terminal, and the first phase low-side signal input terminal of the power module, and the third phase low-side signal input terminal, the second phase low-side signal input terminal, and the first phase signal input terminal are arranged adjacent to each other in sequence.

[0031] Optionally, the second gate driver chip is connected to the third phase high-side signal input terminal, the second phase high-side signal input terminal, and the first phase high-side signal input terminal of the power module, and the third phase high-side signal input terminal, the second phase high-side signal input terminal, and the first phase high-side signal input terminal are arranged adjacent to each other in sequence.

[0032] Optionally, the encapsulation body is rectangular, with the first side and the second side being the wide side of the encapsulation body, and the third side and the fourth side being the long side of the encapsulation body.

[0033] Optionally, the encapsulated body is square.

[0034] Optionally, it also includes a fixing hole located in the middle region of the molding compound, the fixing hole penetrating the top and bottom surfaces of the molding compound.

[0035] Optionally, the first base island, the second base island, and the third base island are located on one side of the fixing hole, and the fourth base island is located on the other side of the fixing hole.

[0036] Optionally, the first gate driver chip and the second gate driver chip are located in a first plane, and the plurality of low-side transistors and the plurality of high-side transistors are located in a second plane, wherein the first plane and the second plane are not on the same plane.

[0037] Optionally, the DC power supply positive terminal, the first phase output terminal, the second phase output terminal, and the third phase output terminal of the power module are bent and led out to the outside of the plastic package.

[0038] Optionally, the power module is a surface-mount package or a through-hole package.

[0039] Optionally, it may also include a power factor correction unit, which includes a PFC transistor, a PFC diode, and a PFC driver chip.

[0040] Optionally, the PFC transistor is located near the plurality of high-side transistors.

[0041] Optionally, the PFC diode and the plurality of high-side transistors are located on the same base island.

[0042] Optionally, the PFC driver chip and the second gate driver chip are located on the same base island.

[0043] Optionally, the power module further includes: a PFC negative terminal, a PFC positive terminal, and a power factor correction signal input terminal; the PFC negative terminal is located on the fourth or third side of the molding compound, and the PFC positive terminal is located on the fourth or third side of the molding compound; the PFC transistor is electrically connected to the PFC negative terminal and the PFC positive terminal.

[0044] Optionally, the power factor correction signal input terminal is located on the fourth or second side of the molding compound, and the PFC driver chip is electrically connected to the power factor correction signal input terminal.

[0045] Optionally, the side length of the encapsulated body is 12mm to 22mm.

[0046] Optionally, the long side of the molding compound is 19mm~29mm, and the short side of the molding compound is 19mm~29mm.

[0047] The power module provided by the present invention adopts a method of setting pins around the plastic package, and positions multiple low-side transistors and multiple high-side transistors between the low-side gate driver chip and the high-side gate driver chip. The low-side transistors and the low-side gate control chip are located on the same side, and the high-side transistors and the high-side gate control chip are located on the other side. This solution makes full use of the internal space of the module while taking into account the electrical spacing. It not only reduces the difficulty of setting bonding wires internally, but also greatly reduces the overall volume of the module, reduces the space it occupies, and significantly reduces the cost.

[0048] Furthermore, the power module can be fitted with a through hole in the middle for bolts to pass through for fixation, and the bootstrap diode is integrated into the high-side gate driver chip, further reducing the overall size. A heat dissipation substrate is added, and the high-side and low-side transistors are placed on the heat dissipation substrate, further enhancing the heat dissipation performance of the power module. A power factor correction unit can also be integrated into the power module, further improving the integration of the power module and reducing the overall size and cost. Attached Figure Description

[0049] The above and other objects, features and advantages of this application will become clearer from the following description of embodiments with reference to the accompanying drawings:

[0050] Figure 1a A schematic diagram of the packaging of a power module according to a first embodiment of the present invention is shown;

[0051] Figure 1b A perspective view of a power module according to a first embodiment of the present invention is shown;

[0052] Figure 2 A schematic diagram of the packaging of a power module according to a second embodiment of the present invention is shown;

[0053] Figure 3 A schematic diagram of the packaging of a power module according to a third embodiment of the present invention is shown;

[0054] Figure 4 A schematic diagram of the packaging of a power module according to a fourth embodiment of the present invention is shown;

[0055] Figure 5 A schematic diagram of the packaging of a power module according to a fifth embodiment of the present invention is shown;

[0056] Figure 6 A schematic diagram of the packaging of a power module according to a sixth embodiment of the present invention is shown;

[0057] Figure 7A schematic diagram of the packaging of a power module according to a seventh embodiment of the present invention is shown;

[0058] Figure 8 A cross-sectional schematic diagram of a power module according to a seventh embodiment of the present invention is shown;

[0059] Figure 9 A schematic diagram of the circuit structure of the power module according to the first embodiment of the present invention is shown;

[0060] Figure 10 A schematic diagram of the packaging of a power module according to an eighth embodiment of the present invention is shown;

[0061] Figure 11 A schematic diagram of the packaging of a power module according to a ninth embodiment of the present invention is shown;

[0062] Figure 12 A schematic diagram of the packaging of a power module according to the tenth embodiment of the present invention is shown;

[0063] Figure 13 A schematic diagram of the circuit structure of the power module according to the eighth embodiment of the present invention is shown. Detailed Implementation

[0064] In the following figures, the same elements are represented by similar reference numerals. For clarity, the parts in the figures are not drawn to scale. Furthermore, some well-known parts may not be shown. For simplicity, a semiconductor structure obtained after several steps can be depicted in a single figure.

[0065] When describing the structure of a device, when referring to a layer or region as being "above" or "on top of" another layer or region, it can mean that it is directly above another layer or region, or that it contains other layers or regions between it and another layer or region. Furthermore, if the device is flipped, the layer or region will be located "below" or "under" another layer or region.

[0066] To describe a situation where it is located directly on another layer or another area, this article will use the expressions "directly on top of" or "on and adjacent to".

[0067] Figure 1aThe diagram shows a power module package according to a first embodiment of the present invention. The power module of the first embodiment includes a lead frame, a plastic package 10, a plurality of low-side transistors, a plurality of high-side transistors, a first gate driver chip A2, and a second gate driver chip A1. The lead frame includes multiple base islands and multiple pins. Specifically, the molding compound 10 is, for example, a square with a side length L of, for example, 12mm to 22mm. The molding compound 10 includes opposing first side 11 and second side 12, as well as opposing third side 13 and fourth side 14. The third side 13 and fourth side 14 are perpendicular to the first side 11 and second side 12. Multiple pins of the lead frame are led out from the four sides of the molding compound 10. The lead frame also includes a first base island 1, a second base island 2, a third base island 3, a fourth base island 4, a fifth base island 5, and a sixth base island 6. There are three low-side transistors Q21-Q23 and three high-side transistors Q11-Q13. The low-side transistors and high-side transistors include any one of three types: MOS devices, RC-IGBT devices, IGBT devices, and fast recovery diodes. The MOS devices include Si MOS devices, SiC MOS devices, or GaN MOS devices.

[0068] Extending along the first side is called the first direction, and extending along the third side is called the second direction. The first low-side transistor Q23 is located on the first base island 1, the second low-side transistor Q22 is located on the second base island 2, and the third low-side transistor Q21 is located on the third base island 3. The first to third base islands are arranged along the first direction. The three high-side transistors Q11-Q13 are located together on the fourth base island 4. The three high-side transistors Q11-Q13 are also arranged along the first side direction.

[0069] The first gate driver chip A2 is located near the first side 11 of the molding compound 10. The first gate driver chip A2 is located on the fifth base island 5. The first gate driver chip A2 is, for example, a low-side driver chip. The low-side transistors are arranged adjacent to the first gate driver chip A2. The second gate driver chip A1 is located near the second side 12 of the molding compound 10. The second gate driver chip A1 is located on the sixth base island 6. The second gate driver chip A1 is, for example, a high-side driver chip. The high-side transistors are arranged adjacent to the second gate driver chip A1. The low-side transistors Q21-Q23 and the high-side transistors Q11-Q13 are located between the first gate driver chip A2 and the second gate driver chip A1.

[0070] This power module is used, for example, in a three-phase drive circuit. The U-phase half-bridge includes a low-side transistor Q23 and a high-side transistor Q13; the V-phase half-bridge includes a low-side transistor Q22 and a high-side transistor Q12; and the W-phase half-bridge includes a low-side transistor Q21 and a high-side transistor Q11. The first base island 1 extends to the third side to produce the U-phase output terminal; the second base island 2 extends to the fourth side to produce the V-phase output terminal; the third base island 3 extends to the fourth side to produce the W-phase output terminal; the fourth base island 4 extends to the third side to produce the DC power supply positive terminal P; the fifth base island 5 extends to the first side to produce the low-side ground terminal COM2; and the sixth base island 6 extends to the fourth side to produce the high-side ground terminal COM1.

[0071] To better distinguish the different bond lines in the molding compound 10, some bond lines are depicted in red, while others are depicted in bold black. Specifically, the red bond lines are signal lines, and the bold black bond lines are power lines. The U-phase low-side signal output terminal of the first gate driver chip A2 is connected to the control terminal of the low-side transistor Q23; the V-phase low-side signal output terminal of the first gate driver chip A2 is connected to the control terminal of the low-side transistor Q22; and the W-phase low-side signal output terminal of the first gate driver chip A2 is connected to the control terminal of the low-side transistor Q21. The U-phase high-side signal output terminal of the second gate driver chip A1 is connected to the control terminal of the high-side transistor Q13; the V-phase high-side signal output terminal of the second gate driver chip A1 is connected to the control terminal of the high-side transistor Q12; and the W-phase high-side signal output terminal of the second gate driver chip A1 is connected to the control terminal of the high-side transistor Q11.

[0072] In this first embodiment, the first side 11 has only low-voltage pins, while the second side 12, the third side 13, and the fourth side 14 all have both high-voltage and low-voltage pins. Specifically, the high-voltage pins include P, U, V, W, VBU, VSU, VBV, VSV, VBW, and VSW, and the remaining pins are low-voltage pins. The pin distribution is uneven. Specifically, the interval between the high-voltage pins and the low-voltage pins is, for example, greater than the interval between the low-voltage pins.

[0073] Table 1. Pin names and descriptions of power modules

[0074] Pin name describe COM1 High lateral end VBU U-phase high-side drive floating power supply terminal VSU U-phase high-side drive floating power supply ground terminal VBV V-phase high-side drive floating power supply terminal VSV V-phase high-side drive floating power supply ground terminal VBW W-phase high-side drive floating power supply terminal VSW W-phase high-side drive floating power supply ground terminal INUH U-phase high-side signal input terminal INVH V-phase high-side signal input terminal INWH W-phase high-side signal input terminal VCCH High-side power supply terminal INUL U-phase low-side signal input terminal INVL V-phase low-side signal input terminal INWL W-phase low-side signal input terminal VCCL Low-side power supply terminal VFO Fault alarm signal output terminal CSC Overcurrent detection input terminal COM2 Low-side ground end VOT Temperature signal output terminal NU U-phase DC power supply negative terminal NV V-phase DC power supply negative terminal NW W-phase DC power supply negative terminal U U-phase output terminal V V-phase output terminal W W-phase output terminal P DC power supply positive terminal

[0075] Table 2. Chip Names and Descriptions for Power Modules

[0076] Chip Name describe Q11 High-side W-phase transistor Q12 High-side V-phase transistor Q13 High-side U-phase transistor A1 Second gate driver chip (HVIC high side) Q21 Low-side W-phase transistor Q22 Low-side V-phase transistor Q23 Low-side U-phase transistor A2 First gate driver chip (LVIC low side)

[0077] Tables 1 and 2 above show the pin names and descriptions, as well as the chip name and description.

[0078] Figure 1b A perspective view of a power module according to a first embodiment of the present invention is shown; Figure 1a From Figure 1b The rear view was obtained by perspective analysis of the molding compound 10. Figure 1b As can be seen, the power module is, for example, square, with the side length of its plastic package 10 being, for example, 12mm to 22mm. The pins of the power module are led out from the four sides of the plastic package 10. Specifically, the phase output terminals corresponding to any two phase drive circuits in the three-phase drive circuit are on the same side as the DC power supply negative terminal corresponding to any one phase drive circuit in the three-phase drive circuit, while the phase output terminal corresponding to the remaining one phase drive circuit in the three-phase drive circuit and the DC power supply negative terminals corresponding to the remaining two phase drive circuits in the three-phase drive circuit are on the opposite side.

[0079] Figure 2 and Figure 3 The following are schematic diagrams of the power module packaging according to the second and third embodiments of the present invention. These second and third embodiments are similar to the first embodiment, and their identical parts will not be described again. The differences lie only in the layout inside the molding compound 10 and the pin arrangement. Specifically, Figure 2 The power module of the second embodiment shown is obtained by mirroring the power module of the first embodiment from left to right. Figure 3 The power module of the third embodiment shown is obtained by mirroring the power module of the first embodiment vertically.

[0080] Figure 4 The diagram shows a power module package according to a fourth embodiment of the present invention. This fourth embodiment is similar to the first embodiment, and the same parts will not be described again. The difference is that the power module also includes a heat dissipation substrate 20, which is still square. The heat dissipation substrate 20 is, for example, a DBC ceramic substrate, an aluminum substrate, or a copper substrate. The first base island 1 to the fourth base island 4 are all located on the heat dissipation substrate 20, and the pins U, V, W, and P are respectively connected to the corresponding base islands on the heat dissipation substrate 20 by soldering.

[0081] Figure 5This diagram illustrates the packaging of a power module according to a fifth embodiment of the present invention. The power module of this fifth embodiment is similar to that of the first embodiment, except that the molding compound 10 of the power module in this fifth embodiment is rectangular, with the first side 11 and the second side 12 being wide, and the third side 13 and the fourth side 14 being long. The power module also includes a heat dissipation substrate 20, which is, for example, a ceramic substrate. The first to fourth base islands are all located on the heat dissipation substrate 20, i.e., the low-side transistors Q21-Q23 and the high-side transistors Q11-Q13 are all located on the heat dissipation substrate 20. The first gate driver chip A2 and the second gate driver chip A1 are located on the left and right sides of the heat dissipation substrate 20, respectively. Furthermore, the heat dissipation substrate 20 also has a gap in the middle. The distance between adjacent pins of the first phase output terminal, the DC power supply positive terminal, the second phase output terminal, and the third phase output terminal is greater than the distance between adjacent low-voltage pins; the distance between adjacent high-voltage pins and low-voltage pins is greater than the distance between adjacent low-voltage pins.

[0082] Figure 6 This diagram illustrates the packaging of a power module according to a sixth embodiment of the present invention; the power module of this sixth embodiment is similar to that of the fifth embodiment, as shown below. Figure 6 As shown, a through hole 30 is provided in the middle area of ​​the power module, at the midpoint between it and the heat sink substrate 20, penetrating the power module vertically. The through hole 30 allows bolts to pass through for fixing; the dotted circle in the figure represents, for example, the outer contour of the bolt nut. Furthermore, the inner wall of the through hole 30 may also be threaded. By passing bolts through the heat sink substrate 20, the power module can be fixed to the heat sink for better heat dissipation; simultaneously, the bolts can also secure the power module. The distance between adjacent pins of the first phase output terminal, the DC power supply positive terminal, the second phase output terminal, and the third phase output terminal is greater than the distance between adjacent low-voltage pins; the distance between adjacent high-voltage pins and low-voltage pins is greater than the distance between adjacent low-voltage pins.

[0083] Figure 7 The diagram shows a packaged schematic of a power module according to a seventh embodiment of the present invention. The power module of this seventh embodiment is similar to that of the fifth embodiment, except that the two pins of the low-side ground terminal COM2 and the temperature signal output terminal VOT corresponding to the first gate driver chip A2 are instead led out from the third side 13.

[0084] Figure 8 The power module shown in the seventh embodiment of the present invention is along Figure 7 A schematic diagram of the cross-section intercepted by the cross-section line shown by the dashed line; from Figure 8As can be seen, the heat dissipation substrate 20 of the power module is located at the bottom of the molding compound 10, and the lower surface of the heat dissipation substrate 20 can be exposed from the molding compound 10 to achieve better heat dissipation. The second gate driver chip A1 is not on the same plane as the high-side transistors Q11-Q13, specifically, the second gate driver chip A1 is located above the high-side transistors Q11-Q13, that is, the sixth base island is set higher than the fourth base island. Similarly, the low-side transistors Q21-Q23 and the first gate driver chip A2 can also adopt a similar height difference design, so that the transistors are closer to the surface of the molding compound with the heat sink, the better the heat dissipation; at the same time, the pins have a certain height difference from the transistors, so that the pins are a certain distance from the surface of the molding compound with the heat sink, which meets the insulation withstand voltage requirements.

[0085] Specifically, the power module can be, for example, an SOP (Small Out-Line Package) surface mount package or a through-hole package, and the length and width of its plastic package 10 are, for example, 19mm to 29mm.

[0086] Figure 9 The circuit structure diagram of the power module according to the first embodiment of the present invention is shown; the U-phase low-side signal output terminal OUTUL of the first gate driver chip A2 is connected to the control terminal of the low-side transistor Q23, the V-phase low-side signal output terminal OUTVL of the first gate driver chip A2 is connected to the control terminal of the second low-side transistor Q22, and the W-phase low-side signal output terminal OUTWL of the first gate driver chip A2 is connected to the control terminal of the low-side transistor Q21.

[0087] The U-phase high-side signal output terminal OUTUH of the second gate driver chip A1 is connected to the control terminal of the high-side transistor Q13, the V-phase high-side signal output terminal OUTUVH of the second gate driver chip A1 is connected to the control terminal of the high-side transistor Q12, and the W-phase high-side signal output terminal OUTWH of the second gate driver chip A1 is connected to the control terminal of the high-side transistor Q11.

[0088] The power module also includes: a bootstrap diode D3 connected between the U-phase high-side drive floating power supply terminal VBU and the high-side power supply terminal VCCH of the second gate driver chip A1; a bootstrap diode D2 connected between the V-phase high-side drive floating power supply terminal VBV and the high-side power supply terminal VCCH of the second gate driver chip A1; and a bootstrap diode D1 connected between the W-phase high-side drive floating power supply terminal VBW and the high-side power supply terminal VCCH of the second gate driver chip A1. Of course, each of the above bootstrap diodes can be integrated into the second gate driver chip A1.

[0089] In this embodiment, the high-side transistor and the low-side transistor are one of the following: MOS (Metal-Oxide-Semiconductor Field-Effect Transistor), RC-IGBT (Reverse-Conducting Insulated-Gate Bipolar Transistor), IGBT (Insulated-Gate Bipolar Transistor), and fast recovery diode.

[0090] When the transistor is a MOS device, the first terminal of the transistor is the drain, the second terminal is the source, and the control terminal is the gate; when the transistor is an IGBT device, the first terminal is the collector, the second terminal is the emitter, and the control terminal is the base.

[0091] Specifically, the first terminal of high-side transistor Q11 is connected to the first terminals of high-side transistors Q12 and Q13, and is also connected to the positive DC power supply terminal P of the power module. The intermediate node between the second terminal of high-side transistor Q13 and the first terminal of low-side transistor Q23 is connected to the U-phase high-side drive floating power supply ground terminal UVS of the second gate driver chip A1, serving as the U-phase output terminal U of the power module. The intermediate node between the second terminal of high-side transistor Q12 and the first terminal of low-side transistor Q22 is connected to the V-phase high-side drive floating power supply ground terminal VVS of the second gate driver chip A1, serving as the V-phase output terminal V of the power module. The intermediate node between the second terminal of high-side transistor Q11 and the first terminal of low-side transistor Q21 is connected to the W-phase high-side drive floating power supply ground terminal WVS of the second gate driver chip A1, serving as the W-phase output terminal W of the power module.

[0092] The second terminal of low-side transistor Q23 is connected to the negative terminal NU of the U-phase DC power supply of the power module. The second terminal of low-side transistor Q22 is connected to the negative terminal NV of the V-phase DC power supply of the power module. The second terminal of low-side transistor Q21 is connected to the negative terminal NW of the W-phase DC power supply of the power module.

[0093] The temperature signal output terminal VOT of the first gate driver chip A2 is connected to the temperature signal output terminal VOT of the power module. The common ground terminal COM of the first gate driver chip A2 is connected to the low-side ground terminal COM2 of the power module. The overcurrent detection input terminal CSC of the first gate driver chip A2 is connected to the overcurrent detection input terminal CSC of the power module. The fault alarm signal output terminal VFO of the first gate driver chip A2 is connected to the fault alarm signal output terminal VFO of the power module. The low-side power supply terminal VCCL of the first gate driver chip A2 is connected to the low-side power supply terminal VCCL of the power module. The W-phase low-side signal input terminal INWL of the first gate driver chip A2 is connected to the W-phase low-side signal input terminal INWL of the power module. The V-phase low-side signal input terminal INVL of the first gate driver chip A2 is connected to the V-phase low-side signal input terminal INVL of the power module. The U-phase low-side signal input terminal INUL of the first gate driver chip A2 is connected to the U-phase low-side signal input terminal INUL of the power module. The common ground terminal COM of the second gate driver chip A1 is connected to the high-side ground terminal COM1 of the power module. Furthermore, the low-side ground terminal COM2 of the power module is internally connected to the high-side ground terminal COM1.

[0094] The high-side power supply terminal VCCH of the second gate driver chip A1 is connected to the first high-side power supply terminal VCCH of the power module. The W-phase high-side signal input terminal INWH of the second gate driver chip A1 is connected to the W-phase high-side signal input terminal INWH of the power module. The V-phase high-side signal input terminal INVH of the second gate driver chip A1 is connected to the V-phase high-side signal input terminal INVH of the power module. The U-phase high-side signal input terminal INUH of the second gate driver chip A1 is connected to the U-phase high-side signal input terminal INUH of the power module. The W-phase high-side drive floating power supply terminal WVB of the second gate driver chip A1 is connected to the W-phase high-side drive floating power supply terminal VBW of the power module. The W-phase high-side drive floating power supply ground terminal WVS of the second gate driver chip A1 is connected to the W-phase high-side drive floating power supply ground terminal VSW of the power module. The V-phase high-side drive floating power supply terminal VVB of the second gate driver chip A1 is connected to the V-phase high-side drive floating power supply terminal VBV of the power module. The V-phase high-side drive floating power supply ground terminal VVS of the second gate driver chip A1 is connected to the V-phase high-side drive floating power supply ground terminal VSV of the power module. The U-phase high-side drive floating power supply terminal UVB of the second gate driver chip A1 is connected to the U-phase high-side drive floating power supply terminal VBU of the power module. The U-phase high-side drive floating power supply ground terminal UVS of the second gate driver chip A1 is connected to the U-phase high-side drive floating power supply ground terminal VSU of the power module.

[0095] Figure 10The diagram shows a packaged schematic of a power module according to an eighth embodiment of the present invention. The power module of the eighth embodiment is similar to that of the fifth embodiment. The power module is based on the fifth embodiment, but with the addition of a power factor correction unit. The power factor correction unit includes, for example, a PFC transistor Q31, a PFC driver chip A3, and a PFC diode D31.

[0096] For example, the PFC driver chip A3 is located on the sixth base island 6, and the second gate driver chip A1 is also located on the sixth base island 6. The power factor correction signal input terminal of the PFC driver chip A3 is led out from the fourth side 14 of the plastic package through the pin INPFC. Furthermore, the pin INPFC can also be led out from the second side 12 of the plastic package.

[0097] For example, PFC transistor Q31 is located on the seventh base island 7. The control terminal of PFC transistor Q31 is electrically connected to PFC driver chip A3. The second terminal of PFC transistor Q31 is connected to the negative terminal pin NX of PFC and leads out from the fourth side 14. The first terminal of PFC transistor Q31 is connected to the seventh base island, which extends to the fourth or third side, leading out the positive terminal pin X of PFC. The seventh base island 7 is located near the fourth base island 4, and the PFC transistor is located near the high-side transistors Q11-Q13. PFC diode D31 and high-side transistors Q11-Q13 are both located on the fourth base island 4, and PFC diode D31 is electrically connected to the seventh base island 7. The negative terminal pin NX of PFC can also lead out from the third side 13 of the molding compound.

[0098] Figure 11 The diagram shows a packaged schematic of a power module according to a ninth embodiment of the present invention. The power module of the ninth embodiment is similar to that of the eighth embodiment, except that the power module of the ninth embodiment further includes a heat dissipation substrate 20, and the low-side transistors Q21-Q23, the high-side transistors Q11-Q13, the PFC diode D31 and the PFC transistor Q31 are all located on the heat dissipation substrate 20.

[0099] Figure 12 This diagram illustrates the packaging of a power module according to a tenth embodiment of the present invention. The power module of this tenth embodiment is similar to that of the ninth embodiment, except that a through-hole 30 is provided in the middle region of the power module, at the midpoint between it and the heat sink substrate 20. The through-hole 30 can be used for fixing, for example, by a bolt. The dotted circle in the diagram represents, for example, the outer contour of the bolt's nut. Furthermore, the inner wall of the through-hole 30 may also be threaded. By passing a bolt through the heat sink substrate 20, the power module can be fixed to the heat sink to better dissipate internal heat and achieve better heat dissipation; simultaneously, the bolt can also secure the power module.

[0100] Figure 13 A schematic diagram of the circuit structure of a power module according to an eighth embodiment of the present invention is shown. The circuit structure of the power module in this eighth embodiment is similar to... Figure 9 The circuit structure of the power module in the first embodiment shown is similar, except that a PFC driver chip A3, a PFC transistor Q31, and a PFC diode D31 are added. Specifically, the VCCH terminal of the PFC driver chip A3 is connected to the VCCH terminal of the second gate driver chip A1; the INPFC terminal of the PFC driver chip A3 serves as the power factor correction signal input terminal and is led out from the plastic package of the power module as the INPFC pin; the COM terminal of the PFC driver chip A3 is connected to the COM terminal of the second gate driver chip A1. The control terminal of the PFC transistor Q31 is electrically connected to the PFC driver chip A3, the second terminal of the PFC transistor Q31 is connected to the PFC negative terminal pin NX, the first terminal of the PFC transistor Q31 is connected to the PFC positive terminal pin X and connected to the anode of the PFC diode D31, and the cathode of the PFC diode D31 is electrically connected to the first terminal of the high-side transistors Q11-Q13. Among them, PFC diode D31 can be a Si FRD device or a SiC FRD device; Q31 can be a Si MOS device, a SiC MOS device, a GaNMOS device, an RC-IGBT device, or an IGBT device.

[0101] According to the power module provided by the present invention, pins are provided around the plastic package, and the low-side transistor and the low-side gate control chip are located on the same side, while the high-side transistor and the high-side gate control chip are located on the other side. This solution makes full use of the internal space of the module while taking into account the electrical spacing. It not only reduces the difficulty of setting bonding wires inside, but also greatly reduces the overall volume of the module, reduces the space it occupies, and significantly reduces the cost.

[0102] Furthermore, the power module can be fitted with a through hole in the middle for bolts to pass through for fixation, and the self-aligning diode is integrated into the high-side gate driver chip, further reducing the overall size. A heat dissipation substrate is added, and the high-side and low-side transistors are placed on the heat dissipation substrate, further enhancing the heat dissipation performance of the power module. A power factor correction unit can also be integrated into the power module, further improving the integration level of the power module and reducing the overall size and cost.

[0103] The above description does not provide detailed explanations of technical aspects such as the packaging steps. However, those skilled in the art should understand that various technical means can be used to form the desired shape and layout. Furthermore, to form the same structure, those skilled in the art can also design methods that are not entirely identical to those described above. Although various embodiments have been described above, this does not mean that the measures in the various embodiments cannot be used advantageously in combination.

[0104] The embodiments of the present invention have been described above. However, these embodiments are merely illustrative and not intended to limit the scope of the invention. The scope of the invention is defined by the appended claims and their equivalents. Various substitutions and modifications can be made by those skilled in the art without departing from the scope of the invention, and all such substitutions and modifications should fall within the scope of the invention.

Claims

1. A power module, characterized in that, include: A plurality of low-side transistors, a plurality of high-side transistors, a first gate driver chip and a second gate driver chip, wherein the first gate driver chip drives the plurality of low-side transistors and the second gate driver chip drives the plurality of high-side transistors, and the plurality of low-side transistors, the plurality of high-side transistors, the first gate driver chip and the second gate driver chip are mounted on a plurality of base islands of the power module; A lead frame having multiple pins; The molding compound includes opposing first and second sides and opposing third and fourth sides, the molding compound covering the lead frame, the plurality of low-side transistors, the plurality of high-side transistors, the first gate driver chip and the second gate driver chip; The lead frame has multiple pins that extend from the first, second, third, and fourth sides of the molding compound to the outside of the molding compound, respectively. The first gate driver chip is located near the first side of the molding compound, the second gate driver chip is located near the second side of the molding compound, and the plurality of low-side transistors and the plurality of high-side transistors are located between the first gate driver chip and the second gate driver chip. The plurality of low-side transistors are adjacent to the first gate driving chip, and the plurality of high-side transistors are adjacent to the second gate driving chip; The plurality of base islands includes a first base island, a second base island, a third base island, a fourth base island, a fifth base island, and a sixth base island. The plurality of low-side transistors include a first low-side transistor, a second low-side transistor, and a third low-side transistor, wherein the first low-side transistor is mounted on the first base island, the second low-side transistor is mounted on the second base island, and the third low-side transistor is mounted on the third base island. The plurality of high-side transistors include a first high-side transistor, a second high-side transistor, and a third high-side transistor, all of which are mounted on the fourth base island; The first gate driver chip is mounted on the fifth base island, and the second gate driver chip is mounted on the sixth base island; One of the first phase output terminal, the second phase output terminal, and the third phase output terminal of the power module is located on a different side of the encapsulation compared to the other two.

2. The power module according to claim 1, characterized in that, The pins of the first gate driver chip are not led out from the second side of the molding compound; the pins of the second gate driver chip are not led out from the first side of the molding compound.

3. The power module according to claim 2, characterized in that, At least some or all of the pins connected to the first gate driver chip are led out from the first side.

4. The power module according to claim 2, characterized in that, At least some or all of the pins connected to the second gate driver chip are led out from the second side.

5. The power module according to claim 4, characterized in that, In the three-phase drive circuit, the high-side drive floating power supply terminal and the high-side drive floating power supply ground terminal of the power module corresponding to at least one phase drive circuit are located on the second side.

6. The power module according to claim 4, characterized in that, In the three-phase drive circuit, the high-side drive floating power supply terminal and the high-side drive floating power supply ground terminal of the power module corresponding to the two-phase drive circuit are located on the second side.

7. The power module according to claim 2, characterized in that, The first side of the encapsulation body has only low-pressure pins.

8. The power module according to claim 2, characterized in that, Low-pressure pins and high-pressure pins are distributed on the second, third, and fourth sides of the encapsulated body.

9. The power module according to claim 2, characterized in that, The power module has high-voltage pins, which include: a DC power supply positive terminal, a first phase output terminal, a second phase output terminal, a third phase output terminal, a first phase high-side drive floating power supply terminal, a first phase high-side drive floating power supply ground terminal, a second phase high-side drive floating power supply terminal, a second phase high-side drive floating power supply ground terminal, a third phase high-side drive floating power supply terminal, and a third phase high-side drive floating power supply ground terminal.

10. The power module according to claim 2, characterized in that, The power module has low-voltage pins, which include: a first-phase DC power supply negative terminal, a second-phase DC power supply negative terminal, a third-phase DC power supply negative terminal, a temperature signal output terminal, a low-side ground terminal, an overcurrent detection input terminal, a fault alarm signal output terminal, a low-side power supply terminal, a third-phase low-side signal input terminal, a second-phase low-side signal input terminal, a first-phase low-side signal input terminal, a high-side ground terminal, a high-side power supply terminal, a third-phase high-side signal input terminal, a second-phase high-side signal input terminal, and a first-phase high-side signal input terminal.

11. The power module according to claim 1, characterized in that, The first base island, the second base island, the third base island, and the fourth base island are base islands on the lead frame.

12. The power module according to claim 11, characterized in that, The first base island, the second base island, and the third base island respectively extend to the first phase output terminal, the second phase output terminal, and the third phase output terminal of the power module; the lead frame extends to the first phase DC power supply negative terminal, the second phase DC power supply negative terminal, and the third DC power supply negative terminal of the power module.

13. The power module according to claim 11, characterized in that, The fourth base island extends the DC power supply positive terminal of the power module to the third and / or fourth side of the molding compound.

14. The power module according to claim 1, characterized in that, The power module further includes a heat dissipation substrate, and the first base island, the second base island, the third base island and the fourth base island are all located on the heat dissipation substrate.

15. The power module according to claim 14, characterized in that, The heat dissipation substrate is a DBC ceramic substrate, an aluminum substrate, or a copper substrate.

16. The power module according to claim 14, characterized in that, The lead frame extends to the first phase DC power supply negative terminal, the second phase DC power supply negative terminal, the third DC power supply negative terminal, the first phase output terminal, the second phase output terminal, and the third phase output terminal of the power module; the first phase output terminal, the second phase output terminal, and the third phase output terminal are respectively connected to the first base island, the second base island, and the third base island on the heat dissipation substrate.

17. The power module according to claim 14, characterized in that, The lead frame extends to the third and / or fourth side of the encapsulation to form the positive DC power supply terminal of the power module, and the positive DC power supply terminal is connected to the fourth base island on the heat dissipation substrate.

18. The power module according to claim 1, characterized in that, One of the first phase DC power supply negative terminal, the second phase DC power supply negative terminal, and the third phase DC power supply negative terminal of the power module is located on a different side of the encapsulation body from the other two.

19. The power module according to claim 1, characterized in that, In a three-phase drive circuit, the phase output terminals of any two phase drive circuits are on the same side as the DC power supply negative terminal of any one phase drive circuit, while the phase output terminals of the remaining one phase drive circuit and the DC power supply negative terminals of the remaining two phase drive circuits are on opposite sides.

20. The power module according to claim 10, characterized in that, The first gate driver chip is connected to the third phase low-side signal input terminal, the second phase low-side signal input terminal and the first phase low-side signal input terminal of the power module, and the third phase low-side signal input terminal, the second phase low-side signal input terminal and the first phase low-side signal input terminal are arranged adjacent to each other in sequence.

21. The power module according to claim 10, characterized in that, The second gate driver chip is connected to the third phase high-side signal input terminal, the second phase high-side signal input terminal and the first phase high-side signal input terminal of the power module, and the third phase high-side signal input terminal, the second phase high-side signal input terminal and the first phase high-side signal input terminal are arranged adjacent to each other in sequence.

22. The power module according to claim 1, characterized in that, The encapsulation body is rectangular, with the first and second sides being the wide sides of the encapsulation body, and the third and fourth sides being the long sides of the encapsulation body.

23. The power module according to claim 1, characterized in that, The encapsulated body is square.

24. The power module according to claim 22, characterized in that, It also includes a fixing hole, which is located in the middle region of the molding compound and penetrates the top and bottom surfaces of the molding compound.

25. The power module according to claim 24, characterized in that, The first base island, the second base island, and the third base island are located on one side of the fixing hole, and the fourth base island is located on the other side of the fixing hole.

26. The power module according to claim 1, characterized in that, The first gate driver chip and the second gate driver chip are located in a first plane, and the plurality of low-side transistors and the plurality of high-side transistors are located in a second plane. The first plane and the second plane are not on the same plane.

27. The power module according to claim 26, characterized in that, The DC power supply positive terminal, the first phase output terminal, the second phase output terminal, and the third phase output terminal of the power module are bent and led out to the outside of the plastic package.

28. The power module according to claim 1, characterized in that, The power module is in a surface-mount or through-hole package.

29. The power module according to claim 1, characterized in that, It also includes a power factor correction unit, which comprises a PFC transistor, a PFC diode, and a PFC driver chip.

30. The power module according to claim 29, characterized in that, The PFC transistor is located near the plurality of high-side transistors.

31. The power module according to claim 29, characterized in that, The PFC diode and the plurality of high-side transistors are located on the same base island.

32. The power module according to claim 29, characterized in that, The PFC driver chip and the second gate driver chip are located on the same base island.

33. The power module according to claim 29, characterized in that, The power module further includes: a PFC negative terminal, a PFC positive terminal, and a power factor correction signal input terminal; the PFC negative terminal is located on the fourth or third side of the molding compound, and the PFC positive terminal is located on the fourth or third side of the molding compound; the PFC transistor is electrically connected to the PFC negative terminal and the PFC positive terminal.

34. The power module according to claim 33, characterized in that, The power factor correction signal input terminal is located on the fourth or second side of the molding compound, and the PFC driver chip is electrically connected to the power factor correction signal input terminal.

35. The power module according to claim 23, characterized in that, The side length of the encapsulated body is 12mm~22mm.

36. The power module according to claim 22, characterized in that, The long side of the encapsulated body is 19mm~29mm, and the short side of the encapsulated body is 19mm~29mm.

37. The power module according to claim 8, characterized in that, The distance between adjacent high-voltage pins in the power module is greater than the distance between adjacent low-voltage pins in the power module.

38. The power module according to claim 37, characterized in that, The distance between adjacent high-voltage pins and low-voltage pins in the power module is greater than the distance between adjacent low-voltage pins in the power module.

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