Organic light-emitting transistor, preparation method, display panel and display device

Abstract

The invention provides an organic light-emitting transistor and a preparation method thereof, a display panel and a display device. The organic light-emitting transistor comprises a substrate; the auxiliary grid electrode is positioned on one side of the substrate; the first gate insulating layer is positioned on one side, far away from the substrate, of the auxiliary gate electrode; the source electrode and the drain electrode are located on the side, away from the substrate, of the first gate insulating layer; the organic semiconductor layer is positioned on one side, far away from the substrate, of the first gate insulating layer; the second gate insulating layer is positioned on one side, far away from the substrate, of the organic semiconductor layer; the control gate is located on one side, far away from the substrate, of the second gate insulating layer; wherein the auxiliary grid electrode is used for regulating and controlling the electrical property of the organic light-emitting transistor. According to the organic light-emitting transistor provided by the invention, electrons in the organic semiconductor layer can be prevented from being captured by an interface between the first gate insulating layer and the organic semiconductor layer, the current stability in the working process of a device is ensured, and the brightness fluctuation condition is avoided.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to an organic light-emitting transistor and a preparation method thereof, a display panel, and a display device. Background Art

[0002] Organic Light-Emitting Transistor (OLET) is a new type of multifunctional optoelectronic device that combines the electrical switching function of field-effect transistor (FET) with the luminous characteristics of light-emitting diode (LED). This device is expected to become a strong competitor for the next generation of flat-panel display technology due to its simple process and potential low cost.

[0003] However, the performance of current organic light-emitting transistor display products needs to be improved. Summary of the invention

[0004] In view of this, the purpose of the present application is to propose an organic light-emitting transistor, which is beneficial to improving the current stability during the operation of the device, reducing brightness fluctuations, and improving device performance.

[0005] Based on the above purpose, the present application provides an organic light-emitting transistor, which includes:

[0006] substrate;

[0007] An auxiliary gate, wherein the auxiliary gate is located on one side of the substrate;

[0008] a first gate insulating layer, wherein the first gate insulating layer is located on a side of the auxiliary gate away from the substrate;

[0009] a source electrode and a drain electrode, wherein the source electrode and the drain electrode are located on a side of the first gate insulating layer away from the substrate;

[0010] an organic semiconductor layer, wherein the organic semiconductor layer is located on a side of the first gate insulating layer away from the substrate;

[0011] a second gate insulating layer, wherein the second gate insulating layer is located on a side of the organic semiconductor layer away from the substrate;

[0012] a control gate, the control gate being located on a side of the second gate insulating layer away from the substrate;

[0013] Wherein, the auxiliary gate is used to regulate the electrical properties of the organic light emitting transistor.

[0014] In one embodiment, the auxiliary gate is used to receive a control voltage, and the control voltage is used to control the distribution of electrons and holes in the channel to control the electrical properties of the organic light emitting transistor;

[0015] In one embodiment, the regulation voltage is greater than the gate voltage of the control gate;

[0016] In one embodiment, the regulation voltage is a constant value.

[0017] In one embodiment, the source electrode and the drain electrode are spaced apart and partially cover a side of the first gate insulating layer away from the substrate, a portion of the organic semiconductor layer covers a side of the source electrode and the drain electrode away from the substrate, and a portion of the organic semiconductor layer covers an area of ​​the first gate insulating layer not covered by the source electrode and the drain electrode.

[0018] In one embodiment, the material of the auxiliary gate includes at least one of aluminum, molybdenum, copper or ITO;

[0019] In one embodiment, the material of the source electrode includes at least one of aluminum, molybdenum, copper or ITO; the material of the drain electrode includes at least one of aluminum, molybdenum, copper or ITO.

[0020] In one embodiment, the material of the first gate insulating layer includes at least one of silicon oxide and hafnium dioxide;

[0021] In one embodiment, the material of the second gate insulating layer includes hafnium dioxide;

[0022] In one embodiment, a material of the second gate insulating layer is different from a material of the first gate insulating layer.

[0023] In one embodiment, the control gate comprises a transparent conductive material;

[0024] In one embodiment, the transparent conductive material includes indium tin oxide;

[0025] In one embodiment, the organic semiconductor layer includes an organic light-emitting material;

[0026] In one embodiment, the organic light-emitting material includes at least one of Alq3 and C8-BTBT.

[0027] Based on the same inventive concept, the present application also discloses a method for preparing an organic light-emitting transistor, which comprises:

[0028] Providing a substrate, and forming an auxiliary gate on one side of the substrate; wherein the auxiliary gate is used to regulate the electrical properties of the organic light-emitting transistor;

[0029] forming a first gate insulating layer on a side of the auxiliary gate away from the substrate;

[0030] forming a source electrode and a drain electrode on a side of the first gate insulating layer away from the substrate;

[0031] forming an organic semiconductor layer on a side of the first gate insulating layer away from the substrate;

[0032] forming a second gate insulating layer on a side of the organic semiconductor layer away from the substrate;

[0033] A control gate is formed on a side of the second gate insulating layer away from the substrate.

[0034] In one embodiment, the auxiliary gate is used to regulate the electrical properties of the organic light emitting transistor, including:

[0035] The auxiliary gate is used to receive a control voltage, and the control voltage is used to control the distribution of electrons and holes in the channel to control the electrical properties of the organic light emitting transistor;

[0036] In one embodiment, the regulation voltage is greater than the gate voltage of the control gate;

[0037] In one embodiment, the regulation voltage is a constant value.

[0038] Based on the same inventive concept, the present application also discloses a display panel, which includes any of the organic light-emitting transistors described above.

[0039] Based on the same inventive concept, the present application also discloses a display device, which includes the above-mentioned display panel.

[0040] Compared with the prior art, the organic light-emitting transistor provided in the present application, by setting an auxiliary gate on the side of the organic semiconductor layer away from the control gate, regulates the electrical properties of the organic light-emitting transistor through the auxiliary gate, prevents electrons in the organic semiconductor layer from being captured by the interface between the first gate insulating layer and the organic semiconductor layer, ensures the current stability during the operation of the device, avoids brightness fluctuations, and thus effectively improves the display performance of the device. BRIEF DESCRIPTION OF THE DRAWINGS

[0041] In order to more clearly illustrate the technical solutions in the present application or related technologies, the drawings required for use in the embodiments or related technical descriptions are briefly introduced below. Obviously, the drawings described below are only embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0042] Figure 1 is a schematic diagram of a layer structure of a related organic light-emitting transistor;

[0043] Figure 2 A schematic diagram of the layer structure of an organic light-emitting transistor provided in one embodiment of the present application;

[0044] Figure 3 A schematic diagram of the layer structure of an organic light-emitting transistor provided in another embodiment of the present application;

[0045] Figure 4 A flow chart of a method for preparing an organic light-emitting transistor provided in another embodiment of the present application;

[0046] Figure 5 A schematic diagram of a method for preparing an organic light-emitting transistor according to another embodiment of the present invention Figure 1 ;

[0047] Figure 6 A schematic diagram of a method for preparing an organic light-emitting transistor according to another embodiment of the present invention Figure 2 ;

[0048] Figure 7 A schematic diagram of a method for preparing an organic light-emitting transistor according to another embodiment of the present invention Figure 3 ;

[0049] Figure 8 A schematic diagram of a method for preparing an organic light-emitting transistor according to another embodiment of the present invention Figure 4 ;

[0050] Fig. 9 A schematic diagram of a method for preparing an organic light-emitting transistor according to another embodiment of the present invention Figure 5 ;

[0051] Fig.10 A schematic diagram of a method for preparing an organic light-emitting transistor according to another embodiment of the present invention Figure 6 ;

[0052] Fig.11 A schematic diagram of a method for preparing an organic light-emitting transistor according to another embodiment of the present invention Figure 7 .

[0053] Marking Description:

[0054] 100, organic light-emitting transistor; 101, electron; 102, hole;

[0055] 1. substrate; 11. first conductive layer; 2. auxiliary gate; 21. second conductive layer; 3. first gate insulating layer; 4. source electrode; 5. drain electrode; 6. organic semiconductor layer; 7. second gate insulating layer; 8. control gate. DETAILED DESCRIPTION

[0056] In order to make the objectives, technical solutions and advantages of the present application more clearly understood, the present application is further described in detail below in combination with specific embodiments and with reference to the accompanying drawings.

[0057] It should be noted that, unless otherwise defined, the technical terms or scientific terms used in the embodiments of the present application should be the usual meanings understood by people with ordinary skills in the field to which the present application belongs. The "first", "second" and similar words used in the embodiments of the present application do not represent any order, quantity or importance, but are only used to distinguish different components. "Including" or "comprising" and similar words mean that the elements or objects appearing in front of the word cover the elements or objects listed after the word and their equivalents, without excluding other elements or objects. "Connect" or "connected" and similar words are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. "Up", "down", "left", "right" and the like are only used to indicate relative positional relationships. When the absolute position of the described object changes, the relative positional relationship may also change accordingly.

[0058] Reference Figure 1 As shown, a related organic light-emitting transistor 100 includes an organic semiconductor layer 6, a first gate insulating layer 3 is arranged on one side of the organic semiconductor layer 6, a control gate 8 is arranged on the side of the first gate insulating layer 3 away from the organic semiconductor layer 6, and a source electrode 4 and a drain electrode 5 are arranged on the side of the organic semiconductor layer 6 away from the first gate insulating layer 3.

[0059] During operation, under the action of the gate voltage and the source-drain voltage, holes 102 and electrons 101 are injected from the source electrode 4 and the drain electrode 5 into the organic semiconductor layer 6, respectively, and the diffused carriers in the organic semiconductor material meet to form excitons. Subsequently, part of the formed excitons are recombined and radiate light in the channel of the device. By adjusting the gate voltage of the control gate 8, the luminous intensity and current density of the device can be changed.

[0060] After long-term research, the inventors found that the current organic light-emitting transistor 100 has a problem of poor stability, and is prone to changes in operating current due to threshold voltage (Vth) offset, resulting in brightness fluctuations, making it impossible to achieve large-scale mass production.

[0061] Specifically, since the display image changes dynamically when the device is working, the gate voltage of the control gate 8 changes dynamically, causing some electrons in the organic semiconductor layer 6 to be captured by the interface between the first gate insulating layer 3 and the organic semiconductor layer 6, thereby affecting the luminescence stability of the organic light-emitting transistor 100.

[0062] Based on this, the present application provides an organic light-emitting transistor solution to solve the above problems.

[0063] Please refer to Figure 2 As shown, an organic light-emitting transistor 100 is provided for an embodiment of the present application, which includes a substrate 1, an auxiliary gate 2, a first gate insulating layer 3, a source electrode 4, a drain electrode 5, an organic semiconductor layer 6, a second gate insulating layer 7 and a control gate 8.

[0064] The auxiliary gate 2 is located on one side of the substrate 1, the first gate insulating layer 3 is located on the side of the auxiliary gate 2 away from the substrate 1, the source 4 and the drain 5 are located on the side of the first gate insulating layer 3 away from the substrate 1, the organic semiconductor layer 6 is located on the side of the first gate insulating layer 3 away from the substrate 1, the second gate insulating layer 7 is located on the side of the organic semiconductor layer 6 away from the substrate 1, and the control gate 8 is located on the side of the second gate insulating layer 7 away from the substrate 1; wherein the auxiliary gate 2 is used to regulate the electrical properties of the organic light-emitting transistor 100.

[0065] Among them, the control gate 8 mainly has the following functions: first, it controls the charge distribution and current size in the channel by applying the gate voltage, thereby effectively controlling the conductive performance of the device. Second, it can affect the injection and transmission efficiency of carriers (electrons and holes), and then indirectly regulate the formation and recombination process of excitons in the organic semiconductor layer 6 to achieve the regulation and control of luminous properties such as luminous intensity and luminous efficiency. Third, it determines the switching characteristics of the device to a certain extent, so that the organic light-emitting transistor 100 can be switched between the on or off state as needed to meet different application requirements.

[0066] The organic light-emitting transistor 100 provided in this embodiment is provided with an auxiliary gate 2 on a side of the organic semiconductor layer 6 away from the control gate 8. The electrical properties of the organic light-emitting transistor 100 are regulated by the auxiliary gate 2 to prevent electrons in the organic semiconductor layer 6 from being captured by the interface between the first gate insulating layer 3 and the organic semiconductor layer 6, thereby ensuring the current stability of the device during operation and avoiding brightness fluctuations, thereby effectively improving the display performance of the device.

[0067] In one embodiment, the auxiliary gate 2 is used to receive a control voltage, and the control voltage is used to control the distribution of electrons 101 and holes 102 in the channel to control the electrical properties of the organic light-emitting transistor 100. The control voltage can suppress the influence of the dynamic change of the gate voltage on the electrons in the organic semiconductor layer 6, thereby preventing the electrons in the organic semiconductor layer 6 from being captured by the interface between the first gate insulating layer 3 and the organic semiconductor layer 6.

[0068] Preferably, the control voltage is a constant value, and the constant control voltage can better suppress the influence of the dynamic change of the gate voltage on the electrons in the organic semiconductor layer 6. Preferably, the control voltage is greater than the gate voltage of the control gate 8, which can further enhance the suppression effect. Among them, the gate voltage is dynamically changing, and the control voltage is greater than the maximum value of the gate voltage, thereby better suppressing the influence of the dynamic change of the gate voltage on the electrons in the organic semiconductor layer 6.

[0069] Please continue to refer to Figure 2 As shown, in one embodiment, the source electrode 4 and the drain electrode 5 are spaced apart and partially cover the side of the first gate insulating layer 3 away from the substrate 1, and part of the organic semiconductor layer 6 covers the side of the source electrode 4 and the drain electrode 5 away from the substrate 1, and part of the organic semiconductor layer 6 covers the area of ​​the first gate insulating layer 3 not covered by the source electrode 4 and the drain electrode 5, which is conducive to ensuring the flatness of the side of the organic semiconductor layer 6 away from the substrate 1, and is convenient for preparing the second gate insulating layer 7. Please refer to Figure 3 As shown, in another embodiment, the organic semiconductor layer 6 covers the side of the source electrode 4 and the drain electrode 5 away from the substrate 1 , and the second gate insulating layer 7 covers the side of the organic semiconductor layer 6 , the source electrode 4 and the drain electrode 5 away from the substrate 1 .

[0070] In one embodiment, the auxiliary gate 2 is made of a metal oxide such as aluminum, molybdenum, copper or ITO to ensure good conductivity, thereby ensuring the performance of the organic light emitting transistor 100 .

[0071] In one embodiment, the source electrode 4 is made of aluminum, molybdenum, copper or metal oxide such as ITO, and the drain electrode 5 is made of aluminum, molybdenum, copper or metal oxide such as ITO to ensure good conductivity and thus the performance of the organic light emitting transistor 100 .

[0072] In one embodiment, the material of the first gate insulating layer 3 is a conventional insulating material such as silicon oxide, or a material with a high dielectric constant such as hafnium dioxide.

[0073] In one embodiment, the material of the second gate insulating layer 7 is hafnium dioxide, preferably a material with a high dielectric constant to ensure the performance of the organic light emitting transistor 100. The material of the second gate insulating layer 7 and the material of the first gate insulating layer 3 may be the same or different.

[0074] In one embodiment, the control gate 8 includes a transparent conductive material, which ensures the conductive performance while avoiding affecting the light emission, so that the organic light emitting transistor 100 emits light from the side of the control gate 8 away from the substrate 1. Preferably, the transparent conductive material is indium tin oxide or the like.

[0075] Preferably, the organic semiconductor layer 6 includes an organic light-emitting material, and the organic light-emitting material is Alq3, C8-BTBT or the like.

[0076] Reference Figure 4 As shown, another embodiment of the present application discloses a method for preparing an organic light-emitting transistor, and the method for preparing an organic light-emitting transistor comprises the following steps:

[0077] Step S10, providing a substrate 1, and forming an auxiliary gate 2 on one side of the substrate 1; wherein the auxiliary gate 2 is used to regulate the electrical properties of the organic light emitting transistor 100;

[0078] Specifically, step S10 includes: first forming a first conductive layer 11 on one side of the substrate 1, referring to Figure 5 Then the first conductive layer 11 is patterned to form an auxiliary gate 2, referring to Figure 6 .

[0079] Preferably, the material of the first conductive layer 11 is a metal oxide such as aluminum, molybdenum, copper or ITO, so as to ensure good conductivity of the auxiliary gate 2 and thus ensure the performance of the organic light emitting transistor 100 .

[0080] Step S20: forming a first gate insulating layer 3 on the side of the auxiliary gate 2 away from the substrate 1, referring to Figure 7 .

[0081] Preferably, the material of the first gate insulating layer 3 is a conventional insulating material such as silicon oxide, or may be a material with a high dielectric constant such as hafnium dioxide.

[0082] Step S30, forming a source electrode 4 and a drain electrode 5 on a side of the first gate insulating layer 3 away from the substrate 1;

[0083] Specifically, step S30 includes: firstly forming a second conductive layer 21 on a side of the first gate insulating layer 3 away from the substrate 1, referring to Figure 8 Then the second conductive layer 21 is patterned to form a source electrode 4 and a drain electrode 5, referring to Fig. 9 .

[0084] Preferably, the material of the second conductive layer 21 is a metal oxide such as aluminum, molybdenum, copper or ITO to ensure good conductivity of the source electrode 4 and the drain electrode 5 , thereby ensuring the performance of the organic light emitting transistor 100 .

[0085] Step S40: forming an organic semiconductor layer 6 on the side of the first gate insulating layer 3 away from the substrate 1, referring to Fig.10 .

[0086] Preferably, the organic semiconductor layer 6 includes an organic light-emitting material, and the organic light-emitting material is Alq3, C8-BTBT or the like.

[0087] Step S50: forming a second gate insulating layer 7 on the side of the organic semiconductor layer 6 away from the substrate 1, referring to Fig.11 .

[0088] Preferably, the material of the second gate insulating layer 7 is hafnium dioxide, preferably a material with a high dielectric constant, to ensure the performance of the organic light emitting transistor 100. The material of the second gate insulating layer 7 and the material of the first gate insulating layer 3 may be the same or different.

[0089] Step S60: forming a control gate 8 on the side of the second gate insulating layer 7 away from the substrate 1, referring to Figure 2 .

[0090] Preferably, the control gate 8 comprises a transparent conductive material, which ensures the conductive performance while avoiding affecting the light emission, so that the organic light emitting transistor 100 emits light from the side of the control gate 8 away from the substrate 1. Preferably, the transparent conductive material is indium tin oxide or the like.

[0091] The method for preparing an organic light-emitting transistor provided in this embodiment provides an auxiliary gate 2 on a side of the organic semiconductor layer 6 away from the control gate 8, and regulates the electrical properties of the organic light-emitting transistor 100 through the auxiliary gate 2, thereby preventing electrons in the organic semiconductor layer 6 from being captured by the interface between the first gate insulating layer 3 and the organic semiconductor layer 6, ensuring the current stability during the operation of the device, avoiding brightness fluctuations, and effectively improving the display performance of the device.

[0092] In one embodiment, in step S10, the auxiliary gate 2 is used to regulate the electrical properties of the organic light-emitting transistor 100, including: the auxiliary gate 2 is used to receive a regulation voltage, and the regulation voltage is used to regulate the distribution of electrons 101 and holes 102 in the channel to regulate the electrical properties of the organic light-emitting transistor 100. The regulation voltage can suppress the influence of the dynamic change of the gate voltage on the electrons in the organic semiconductor layer 6, thereby preventing the electrons in the organic semiconductor layer 6 from being captured by the interface between the first gate insulating layer 3 and the organic semiconductor layer 6.

[0093] Preferably, the control voltage is a constant value, and the constant control voltage can better suppress the influence of the dynamic change of the gate voltage on the electrons in the organic semiconductor layer 6. Preferably, the control voltage is greater than the gate voltage of the control gate 8, which can further enhance the suppression effect. Among them, the gate voltage is dynamically changing, and the control voltage is greater than the maximum value of the gate voltage, thereby better suppressing the influence of the dynamic change of the gate voltage on the electrons in the organic semiconductor layer 6.

[0094] Another embodiment of the present application provides a display panel, which includes the above-mentioned organic light emitting transistor 100 .

[0095] In the display panel provided in this embodiment, the organic light-emitting transistor 100 is provided with an auxiliary gate 2 on a side of the organic semiconductor layer 6 away from the control gate 8. The electrical properties of the organic light-emitting transistor 100 are regulated by the auxiliary gate 2 to prevent electrons in the organic semiconductor layer 6 from being captured by the interface between the first gate insulating layer 3 and the organic semiconductor layer 6, thereby ensuring the current stability during the operation of the device and avoiding brightness fluctuations, thereby effectively improving the display performance of the display panel.

[0096] Another embodiment of the present application provides a display device, which includes the display panel of the above embodiment. Furthermore, the display device includes a mobile phone, a VR device, a computer, a television, a car-mounted display device, etc.

[0097] The display device provided in this embodiment has a display panel including an organic light-emitting transistor 100. The organic light-emitting transistor 100 is provided with an auxiliary gate 2 on a side of the organic semiconductor layer 6 away from the control gate 8. The electrical properties of the organic light-emitting transistor 100 are regulated by the auxiliary gate 2 to prevent electrons in the organic semiconductor layer 6 from being captured by the interface between the first gate insulating layer 3 and the organic semiconductor layer 6, thereby ensuring the current stability during the operation of the device and avoiding brightness fluctuations, thereby effectively improving the display performance of the display device.

[0098] Although the present application has been described in conjunction with specific embodiments thereof, many alternatives, modifications and variations of these embodiments will be apparent to those skilled in the art in light of the foregoing description.

[0099] It should be noted that the above describes some embodiments of the present application. Other embodiments are within the scope of the appended claims. In some cases, the actions or steps recorded in the claims can be performed in an order different from that in the above embodiments and still achieve the desired results. In addition, the processes depicted in the accompanying drawings do not necessarily require the specific order or continuous order shown to achieve the desired results. In some embodiments, multitasking and parallel processing are also possible or may be advantageous.

[0100] The embodiments of the present application are intended to cover all such substitutions, modifications and variations that fall within the broad scope of the appended claims. Therefore, any omissions, modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the embodiments of the present application should be included in the scope of protection of the present application.

Claims

1. An organic light emitting transistor, characterized in that: include: substrate; An auxiliary gate, wherein the auxiliary gate is located on one side of the substrate; a first gate insulating layer, wherein the first gate insulating layer is located on a side of the auxiliary gate away from the substrate; a source electrode and a drain electrode, wherein the source electrode and the drain electrode are located on a side of the first gate insulating layer away from the substrate; an organic semiconductor layer, wherein the organic semiconductor layer is located on a side of the first gate insulating layer away from the substrate; a second gate insulating layer, wherein the second gate insulating layer is located on a side of the organic semiconductor layer away from the substrate; a control gate, the control gate being located on a side of the second gate insulating layer away from the substrate; Wherein, the auxiliary gate is used to regulate the electrical properties of the organic light emitting transistor.

2. The organic light emitting transistor according to claim 1, characterized in that: The auxiliary gate is used to receive a control voltage, and the control voltage is used to control the distribution of electrons and holes in the channel to control the electrical properties of the organic light emitting transistor; Preferably, the regulation voltage is a constant value; Preferably, the regulation voltage is greater than the gate voltage of the control gate.

3. The organic light emitting transistor according to claim 1, characterized in that: The source electrode and the drain electrode are spaced apart and partially cover a side of the first gate insulating layer away from the substrate, a portion of the organic semiconductor layer covers a side of the source electrode and the drain electrode away from the substrate, and a portion of the organic semiconductor layer covers an area of ​​the first gate insulating layer not covered by the source electrode and the drain electrode.

4. The organic light emitting transistor according to claim 1, characterized in that: The material of the auxiliary gate includes at least one of aluminum, molybdenum, copper or ITO; Preferably, the material of the source electrode includes at least one of aluminum, molybdenum, copper or ITO; the material of the drain electrode includes at least one of aluminum, molybdenum, copper or ITO.

5. The organic light emitting transistor according to claim 1, characterized in that: The material of the first gate insulating layer includes at least one of silicon oxide and hafnium dioxide; Preferably, the material of the second gate insulating layer includes hafnium dioxide; Preferably, a material of the second gate insulating layer is different from a material of the first gate insulating layer.

6. The organic light emitting transistor according to claim 1, characterized in that: The control grid comprises a transparent conductive material; Preferably, the transparent conductive material comprises indium tin oxide; Preferably, the organic semiconductor layer comprises an organic light-emitting material; Preferably, the organic light-emitting material includes at least one of Alq3 and C8-BTBT.

7. A method for preparing an organic light-emitting transistor, characterized in that: include: Providing a substrate, and forming an auxiliary gate on one side of the substrate; wherein the auxiliary gate is used to regulate the electrical properties of the organic light-emitting transistor; forming a first gate insulating layer on a side of the auxiliary gate away from the substrate; forming a source electrode and a drain electrode on a side of the first gate insulating layer away from the substrate; forming an organic semiconductor layer on a side of the first gate insulating layer away from the substrate; forming a second gate insulating layer on a side of the organic semiconductor layer away from the substrate; A control gate is formed on a side of the second gate insulating layer away from the substrate.

8. The method for preparing an organic light-emitting transistor according to claim 7, characterized in that: The auxiliary gate is used to regulate the electrical properties of the organic light emitting transistor, including: The auxiliary gate is used to receive a control voltage, and the control voltage is used to control the distribution of electrons and holes in the channel to control the electrical properties of the organic light emitting transistor; Preferably, the regulation voltage is a constant value; Preferably, the regulation voltage is greater than the gate voltage of the control gate.

9. A display panel, characterized in that: Comprising the organic light-emitting transistor as described in any one of claims 1 to 6.

10. A display device, characterized in that: Comprising the display panel as claimed in claim 9.

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