Light emitting diode capable of improving current expansion capability and preparation method thereof

Abstract

The embodiment of the invention provides a light emitting diode capable of improving current expansion capability and a preparation method thereof, and belongs to the technical field of semiconductors. The light-emitting diode comprises a light-emitting structure, a first passivation layer, a connecting electrode layer, a second passivation layer and a bonding pad electrode layer, and the connecting electrode layer comprises a plurality of strip-shaped first connecting electrodes and a plurality of strip-shaped second connecting electrodes which are alternately arranged at intervals in the first direction. The length directions of the first connecting electrode and the second connecting electrode are second directions, and the first direction and the second direction are intersected; each first connecting electrode is electrically connected with the first semiconductor layer in the plurality of grooves through a plurality of first through holes penetrating through the first passivation layer, and each second connecting electrode is electrically connected with the second semiconductor layer through a plurality of second through holes penetrating through the first passivation layer. According to the embodiment of the invention, the luminous efficiency and reliability of the LED can be improved, and the driving voltage of the LED is reduced.

Description

Technical Field

[0001] The present disclosure relates to the field of semiconductor technology, and in particular to a light emitting diode with improved current expansion capability and a preparation method thereof. Background Art

[0002] Light Emitting Diode (LED) has been widely used in various light source fields such as backlight, lighting, and landscaping due to its small size, long service life, rich colors, and low energy consumption.

[0003] In the related art, an LED includes a light-emitting structure and a connecting electrode layer. The light-emitting structure includes a first semiconductor layer, a light-emitting layer, and a second semiconductor layer stacked in sequence, and the light-emitting structure has a groove extending from the surface of the second semiconductor layer away from the light-emitting layer to the first semiconductor layer. The connecting electrode layer includes a first connecting electrode and a second connecting electrode, the first connecting electrode is located in the groove and connected to the first semiconductor layer, the second connecting electrode is located on the surface of the second semiconductor layer and connected to the second semiconductor layer, and the first connecting electrode and the second connecting electrode each include a plurality of connected strip electrodes.

[0004] However, when the current is conducted to the light-emitting structure through the first connecting electrode and the second connecting electrode, the current may gather in the interconnected area of ​​the strip electrodes, affecting the lateral expansion capability of the current in the connecting electrode layer. The current conduction in different areas of the connecting electrode layer is uneven, which makes the current unevenly distributed in the light-emitting structure, thereby causing non-radiative recombination of carriers and affecting the luminous efficiency of the LED. In addition, the current crowding caused by the uneven current distribution will also cause the driving voltage of the LED to increase, and cause the LED to fail by breakdown, thus affecting the reliability of the LED. Summary of the invention

[0005] The embodiment of the present disclosure provides a light emitting diode with improved current expansion capability and a method for manufacturing the same, which can improve the light emitting efficiency and reliability of the LED and reduce the driving voltage of the LED. The technical solution is as follows:

[0006] On the one hand, a light-emitting diode is provided, comprising a light-emitting structure, a first passivation layer, a connecting electrode layer, a second passivation layer and a pad electrode layer, wherein the light-emitting structure comprises a first semiconductor layer, a light-emitting layer and a second semiconductor layer stacked in sequence, and the light-emitting structure has a plurality of grooves extending from a surface of the second semiconductor layer away from the light-emitting layer to the first semiconductor layer; the first passivation layer covers a surface of the second semiconductor layer away from the light-emitting layer; the connecting electrode layer comprises a plurality of first connecting electrodes in strips and a plurality of second connecting electrodes in strips arranged alternately in a first direction, the length directions of the first connecting electrodes and the second connecting electrodes are both in a second direction, and the first direction and the second direction intersect; each The first connecting electrodes are electrically connected to the first semiconductor layers in the plurality of grooves through a plurality of first through holes penetrating the first passivation layer, and each of the second connecting electrodes is electrically connected to the second semiconductor layer through a plurality of second through holes penetrating the first passivation layer; the second passivation layer covers the surface of the connecting electrode layer away from the light-emitting structure; the pad electrode layer is located on the surface of the second passivation layer away from the connecting electrode layer, the pad electrode layer includes a first pad electrode and a second pad electrode arranged at intervals in the second direction, the first pad electrode penetrates the second passivation layer and is connected to the plurality of first connecting electrodes, and the second pad electrode penetrates the second passivation layer and is connected to the plurality of second connecting electrodes.

[0007] Optionally, a distance between two adjacent first connecting electrodes in the first direction is equal to a distance between two adjacent second connecting electrodes in the first direction.

[0008] Optionally, a distance between two adjacent first connection electrodes in the first direction and a distance between two adjacent second connection electrodes in the first direction are both 90 μm to 110 μm.

[0009] Optionally, a distance between adjacent first connecting electrodes and second connecting electrodes in the first direction is 35 μm to 85 μm.

[0010] Optionally, the light-emitting diode also includes a first electrode layer, the first electrode layer includes a plurality of first electrode groups and a plurality of second electrode groups, the plurality of first electrode groups and the plurality of second electrode groups are alternately arranged in the first direction; each of the first electrode groups includes a plurality of first electrodes arranged in the second direction, each of the first electrodes is located in one of the grooves and connected to the first semiconductor layer, and each of the first connecting electrodes is connected to a first electrode in the first electrode group through a plurality of the first through holes; each of the second electrode groups includes a plurality of second electrodes arranged in the second direction, the second electrodes are located on a surface of the second semiconductor layer away from the light-emitting layer and connected to the second semiconductor layer, and each of the second connecting electrodes is connected to a second electrode in the second electrode group through a plurality of the second through holes.

[0011] Optionally, a ratio of a maximum width of an orthographic projection of the first electrode on the first semiconductor layer to a maximum width of an orthographic projection of the groove on the first semiconductor layer is greater than 0.5 and less than or equal to 0.95.

[0012] Optionally, a distance between two adjacent first electrodes in the first direction is equal to a distance between two adjacent first electrodes in the second direction.

[0013] Optionally, a spacing between adjacent first electrodes and second electrodes in the first direction is equal to a spacing between adjacent first electrodes and second electrodes in the second direction.

[0014] Optionally, the first semiconductor layer is a P-type semiconductor layer, and the second semiconductor layer is an N-type semiconductor layer.

[0015] On the other hand, a method for preparing a light-emitting diode is provided, comprising: providing a light-emitting structure, the light-emitting structure comprising a first semiconductor layer, a light-emitting layer, and a second semiconductor layer stacked in sequence, the light-emitting structure having a plurality of grooves extending from a surface of the second semiconductor layer away from the light-emitting layer toward the first semiconductor layer; forming a first passivation layer on the light-emitting structure, the first passivation layer covering a surface of the second semiconductor layer away from the light-emitting layer; forming a connecting electrode layer on the first passivation layer, the connecting electrode layer comprising a plurality of first connecting electrodes in the form of strips and a plurality of second connecting electrodes in the form of strips alternately arranged in a first direction, the length directions of the first connecting electrodes and the second connecting electrodes both being in a second direction, and the length directions of the first direction and the second direction being in a second direction. The two directions intersect; each of the first connecting electrodes is electrically connected to the first semiconductor layer in the plurality of grooves through a plurality of first through holes penetrating the first passivation layer, and each of the second connecting electrodes is electrically connected to the second semiconductor layer through a plurality of second through holes penetrating the first passivation layer; a second passivation layer is formed on the connecting electrode layer, and the second passivation layer covers the surface of the connecting electrode layer away from the light-emitting structure; a pad electrode layer is formed on the second passivation layer, and the pad electrode layer includes a first pad electrode and a second pad electrode arranged at intervals in the second direction, the first pad electrode penetrates the second passivation layer and is connected to the plurality of first connecting electrodes, and the second pad electrode penetrates the second passivation layer and is connected to the plurality of second connecting electrodes.

[0016] The technical solution provided by the embodiments of the present disclosure has the following beneficial effects:

[0017] In the embodiment of the present disclosure, the connection electrode layer includes a plurality of first connection electrodes and a plurality of second connection electrodes in a strip shape alternately arranged in a first direction, the length directions of the first connection electrodes and the second connection electrodes are both in the second direction, and the first direction and the second direction intersect. Each first connection electrode is electrically connected to the first semiconductor layer in the plurality of grooves through a plurality of first through holes penetrating the first passivation layer, and each second connection electrode is electrically connected to the second semiconductor layer through a plurality of second through holes penetrating the first passivation layer. The first pad electrode penetrates the second passivation layer and is connected to the plurality of first connection electrodes, and the second pad electrode penetrates the second passivation layer and is connected to the plurality of second connection electrodes. In this way, when the surface area of ​​the light-emitting structure remains unchanged, the plurality of first connection electrodes and the plurality of second connection electrodes can be more evenly spaced and distributed above the surface of the light-emitting structure. When the current is conducted through the pad electrode layer to the plurality of first connection electrodes and the plurality of second connection electrodes in a strip shape alternately arranged in a strip shape, the probability of the current gathering in a partial area of ​​the connection electrode layer can be reduced, thereby improving the lateral expansion capability of the current in the connection electrode layer. In the connection electrode layer, the current passes through the first connection electrode, the first through holes and the grooves, and the second connection electrode and the second through holes to more uniformly expand laterally to the first semiconductor layer and the second semiconductor layer in each area of ​​the light-emitting structure, so as to improve the radiation recombination efficiency of the carriers, thereby improving the luminous efficiency of the LED. In addition, the lateral expansion capability of the current is improved, which can reduce the driving voltage of the LED and reduce the probability of breakdown failure of the LED due to current crowding, thereby improving the reliability of the LED. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present disclosure. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0019] Figure 1 is a top view of an LED provided by an embodiment of the present disclosure;

[0020] Figure 2 yes Figure 1 Schematic diagram of the cross-section structure at the AA line;

[0021] Figure 3 is a top view of another LED provided by an embodiment of the present disclosure;

[0022] Figure 4 is a flow chart of a method for preparing an LED provided by an embodiment of the present disclosure;

[0023] Figure 5is a flow chart of another method for preparing an LED provided by an embodiment of the present disclosure;

[0024] Figure 6 is a top view of an LED manufacturing process provided by an embodiment of the present disclosure;

[0025] Figure 7 is a top view of an LED manufacturing process provided by an embodiment of the present disclosure;

[0026] Figure 8 1 is a top view of an LED in a control group provided in an embodiment of the present disclosure.

[0027] Reference numerals:

[0028] x: first direction; y: second direction; 10: light-emitting structure; 11: first semiconductor layer; 12: light-emitting layer; 13: second semiconductor layer; 14: groove; 21: first electrode; 22: second electrode; 30: first passivation layer; 31: first through hole; 32: second through hole; 41: first connecting electrode; 42: second connecting electrode; 50: second passivation layer; 51: third through hole; 52: fourth through hole; 61: first pad electrode; 62: second pad electrode; 63: notch; 70: substrate. DETAILED DESCRIPTION

[0029] In order to make the objectives, technical solutions and advantages of the present disclosure more clear, the embodiments of the present disclosure will be further described in detail below with reference to the accompanying drawings.

[0030] Unless otherwise defined, the technical terms or scientific terms used herein shall have the usual meanings understood by persons with ordinary skills in the field to which the present disclosure belongs. The words "first", "second", "third" and similar words used in the patent application specification and claims of the present disclosure do not indicate any order, quantity or importance, but are only used to distinguish different components. Similarly, words such as "one" or "one" do not indicate a quantity limitation, but indicate that there is at least one. Words such as "include" and similar words mean that the elements or objects appearing before "include" include the elements or objects listed after "include" and their equivalents, and do not exclude other elements or objects. Words such as "connect" and similar words are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "Up", "down", "left", "right", "top", "bottom" and the like are only used to indicate relative positional relationships. When the absolute position of the described object changes, the relative positional relationship may also change accordingly.

[0031] Figure 1 1 is a top view of an LED provided in an embodiment of the present disclosure. Figure 2 yes Figure 1Schematic diagram of the cross-section structure at the AA line. Figure 1 and Figure 2 The LED includes a light emitting structure 10, a first passivation layer 30, a connection electrode layer, a second passivation layer 50 and a pad electrode layer. The light emitting structure 10 includes a first semiconductor layer 11, a light emitting layer 12 and a second semiconductor layer 13 stacked in sequence, and the light emitting structure 10 has a plurality of grooves 14 extending from a surface of the second semiconductor layer 13 away from the light emitting layer 12 to the first semiconductor layer 11.

[0032] The first passivation layer 30 covers the surface of the second semiconductor layer 13 away from the light emitting layer 12. The connection electrode layer includes a plurality of first connection electrodes 41 and a plurality of second connection electrodes 42 in strip shape alternately arranged in a first direction x, the length directions of the first connection electrodes 41 and the second connection electrodes 42 are both in the second direction y, and the first direction x and the second direction y intersect.

[0033] Each first connection electrode 41 is electrically connected to the first semiconductor layer 11 in the plurality of grooves 14 through a plurality of first through holes 31 penetrating the first passivation layer 30 , and each second connection electrode 42 is electrically connected to the second semiconductor layer 13 through a plurality of second through holes 32 penetrating the first passivation layer 30 .

[0034] The second passivation layer 50 covers the surface of the connection electrode layer away from the light emitting structure 10. The pad electrode layer is located on the surface of the second passivation layer 50 away from the connection electrode layer, and the pad electrode layer includes a first pad electrode 61 and a second pad electrode 62 arranged at intervals in the second direction y, the first pad electrode 61 penetrates the second passivation layer 50 and is connected to the plurality of first connection electrodes 41, and the second pad electrode 62 penetrates the second passivation layer 50 and is connected to the plurality of second connection electrodes 42.

[0035] In the embodiment of the present disclosure, when the surface area of ​​the light emitting structure 10 remains unchanged, the plurality of first connection electrodes 41 and the plurality of second connection electrodes 42 can be more evenly spaced and distributed above the surface of the light emitting structure 10. When the current is conducted through the pad electrode layer to the plurality of first connection electrodes 41 and the plurality of second connection electrodes 42 arranged alternately and spaced, the probability of the current gathering in a part of the connection electrode layer can be reduced, thereby improving the lateral expansion capability of the current in the connection electrode layer. In the connection electrode layer, the current passes through the first connection electrode 41, the plurality of first through holes 31 and the plurality of grooves 14, and the second connection electrode 42 and the plurality of second through holes 32, and can be more evenly expanded laterally to the first semiconductor layer 11 and the second semiconductor layer 13 of each region of the light emitting structure 10, so as to improve the radiation recombination efficiency of the carriers, thereby improving the luminous efficiency of the LED. In addition, the lateral expansion capability of the current is improved, which can reduce the driving voltage of the LED, and can also reduce the probability of the LED producing breakdown failure due to current crowding, thereby improving the reliability of the LED.

[0036] Optionally, the first direction x and the second direction y are perpendicular to each other.

[0037] Exemplarily, the first direction x is a row direction, and the second direction y is a column direction.

[0038] Optionally, the spacing D1 between two adjacent first connection electrodes 41 in the first direction x is equal to the spacing D2 between two adjacent second connection electrodes 42 in the first direction x. Here, the spacing refers to the distance between the center lines of the two adjacent first connection electrodes 41 in the length direction, and the distance between the center lines of the two adjacent second connection electrodes 42 in the length direction. In this way, the plurality of first connection electrodes 41 and the plurality of second connection electrodes 42 can be more evenly spaced and distributed above the surface of the light emitting structure 10, which is conducive to improving the lateral expansion capability of the current in the first connection electrodes 41 and the second connection electrodes 42.

[0039] Optionally, the interval D1 between two adjacent first connection electrodes 41 in the first direction x and the interval D2 between two adjacent second connection electrodes 42 in the first direction x are both 90 μm to 110 μm. In this way, D1 and D2 are both relatively large, which can reduce the probability of current crowding, thereby reducing the probability of breakdown failure of the LED and improving the reliability of the LED.

[0040] For example, the interval D1 between two adjacent first connection electrodes 41 in the first direction x and the interval D2 between two adjacent second connection electrodes 42 in the first direction x may both be 90 μm, 100 μm, or 110 μm.

[0041] Optionally, the spacing D3 between the adjacent first connection electrodes 41 and the second connection electrodes 42 in the first direction x is 35 μm to 85 μm. If D3 is too small, the area of ​​the region where the carriers generate radiation recombination may be small, affecting the light-emitting area of ​​the LED; if D3 is too large, the current distribution may be too sparse, affecting the radiation recombination efficiency of the carriers. When D3 is within this range, it can ensure that the area of ​​the region where the carriers generate radiation recombination is large, and the light-emitting area of ​​the LED is large, while effectively improving the radiation recombination efficiency of the carriers, thereby improving the light-emitting efficiency of the LED.

[0042] For example, the interval D3 between adjacent first connection electrodes 41 and second connection electrodes 42 in the first direction x may be 55 μm, 65 μm, 75 μm, or the like.

[0043] Optionally, the LED further comprises a substrate 70, and the substrate 70 is located on a surface of the light emitting structure 10 away from the connecting electrode layer. The substrate 70 can provide support for the light emitting structure 10, and ensure good reliability of the LED.

[0044] Optionally, the substrate 70 may be a sapphire substrate. The sapphire substrate is a transparent substrate with good light transmittance, and the sapphire substrate has high mechanical strength and is easy to handle and clean. In other embodiments, the substrate 70 may also be a Si substrate, a SiC substrate or a SiO2 substrate, which is not limited in the present disclosure.

[0045] Exemplarily, the substrate 70 may be a rectangular substrate, and the surface of the substrate 70 may be a rectangular surface or a square surface.

[0046] Optionally, the LED may be a red-yellow flip-chip LED.

[0047] Exemplarily, when the LED is a red-yellow LED, the substrate 70 and the light emitting structure 10 are bonded to each other.

[0048] Optionally, the first semiconductor layer 11 is a P-type semiconductor layer, and the second semiconductor layer 13 is an N-type semiconductor layer. Since the N-type semiconductor layer has good current expansion performance, in the embodiment of the present disclosure, no transparent conductive layer and current blocking layer are provided between the second semiconductor layer 13 and the second connection electrode, which can also make the current have good lateral expansion capability, and is conducive to reducing production costs and improving production efficiency.

[0049] Exemplarily, the first semiconductor layer 11 may be a P-type AlInP layer, and the second semiconductor layer 13 may be an N-type AlInP layer. For example, the first semiconductor layer 11 is a Mg-doped AlInP layer, and the second semiconductor layer 13 is a Si-doped AlInP layer.

[0050] Optionally, the light emitting layer 12 may be an undoped AlGaInP layer.

[0051] In other embodiments, different materials may be selected for the first semiconductor layer 11, the light-emitting layer 12, and the second semiconductor layer 13 according to different light-emitting wavelength ranges of the LED. For example, in a blue-green LED, the first semiconductor layer 11 may be an N-type GaN layer, the second semiconductor layer 13 may be a P-type GaN layer, and the light-emitting layer 12 may be a plurality of pairs of InGaN layers and GaN layers stacked alternately, which is not limited in the present disclosure.

[0052] It should be noted that the materials of the film layers of the first semiconductor layer 11 and the second semiconductor layer 13 in the above-mentioned light emitting structure 10 are only used as an example. In other embodiments, the materials can be selected according to actual needs.

[0053] Exemplarily, the orthographic projection of the groove 14 on the first semiconductor layer 11 is a circle.

[0054] Exemplarily, the diameter W0 of the groove 14 on the first semiconductor layer 11 is 30 μm.

[0055] like Figure 1 and Figure 2 As shown, the LED further includes a first electrode layer, the first electrode layer includes a plurality of first electrode groups and a plurality of second electrode groups, and the plurality of first electrode groups and the plurality of second electrode groups are alternately arranged in a first direction x.

[0056] Exemplarily, each first electrode group includes a plurality of first electrodes 21 arranged at intervals in the second direction y, each first electrode 21 is located in a groove 14 and connected to the first semiconductor layer 11, and each first connecting electrode 41 is connected to a first electrode 21 in a first electrode group through a plurality of first through holes 31.

[0057] Exemplarily, each second electrode group includes a plurality of second electrodes 22 arranged at intervals in the second direction y, the second electrodes 22 are located on a surface of the second semiconductor layer 13 away from the light-emitting layer 12 and are connected to the second semiconductor layer 13, and each second connecting electrode 42 is connected to a second electrode 22 in a second electrode group through a plurality of second through holes 32.

[0058] In this way, the connecting electrode layer can form a reliable electrical connection with the light-emitting structure 10 through the first electrode layer, and when the surface area of ​​the light-emitting structure 10 remains unchanged, the multiple first electrodes 21 and the multiple second electrodes 22 can be more evenly distributed on the surface of the light-emitting structure 10, and the current passing through the first electrode 21 and the second electrode 22 can be more evenly expanded laterally to various regions of the light-emitting structure 10, so as to improve the radiation recombination efficiency of the carriers and reduce the driving voltage of the LED.

[0059] Exemplarily, the orthographic projection of each first electrode group on the first semiconductor layer 11 is located inside the orthographic projection of a first connecting electrode 41 on the first semiconductor layer 11, and each first connecting electrode 41 is connected to the first electrode group through a plurality of first through holes 31. And the center line of the first electrode group in the second direction y coincides with the center line of the corresponding first connecting electrode 41 in the length direction.

[0060] Exemplarily, the orthographic projection of each second electrode group on the second semiconductor layer 13 is located inside the orthographic projection of a second connecting electrode 42 on the second semiconductor layer 13, and each second connecting electrode 42 is connected to the second electrode group through a plurality of second through holes 32. And the center line of the second electrode group in the second direction y coincides with the center line of the corresponding second connecting electrode 42 in the length direction.

[0061] Optionally, the ratio of the maximum width W1 of the orthographic projection of the first electrode 21 on the first semiconductor layer 11 to the maximum width W0 of the orthographic projection of the groove 14 on the first semiconductor layer 11 is greater than 0.5 and less than or equal to 0.95. Here, the maximum width refers to the maximum value of the width in the direction parallel to the surface of the substrate 70. In this way, the first electrode 21 can form a good ohmic contact with the first semiconductor layer 11, and the injection efficiency of carriers can be improved when the current is conducted to the light emitting structure 10 through the plurality of first electrodes 21, thereby improving the radiation recombination efficiency of carriers.

[0062] For example, the ratio of the maximum width W1 of the orthographic projection of the first electrode 21 on the first semiconductor layer 11 to the maximum width W0 of the orthographic projection of the groove 14 on the first semiconductor layer 11 may be 0.6, 0.7, 0.8 or the like.

[0063] Exemplarily, the maximum width W1 of the orthographic projection of the first electrode 21 on the first semiconductor layer 11 is greater than 15 μm and less than or equal to 30 μm. If W1 is too small, the first electrode 21 may not be able to form a good ohmic contact with the first semiconductor layer 11, affecting the carrier injection efficiency; if W1 is too large, the first electrode 21 may be connected to the second semiconductor layer 13, causing the LED to short-circuit and fail. When W1 is within this range, the first electrode 21 can form a good ohmic contact with the first semiconductor layer 11, and the injection efficiency of carriers can be improved when the current is conducted to the light-emitting structure 10 through multiple first electrodes 21, thereby improving the radiation recombination efficiency of carriers, and reducing the probability of the LED short-circuiting and failing due to the contact between the first electrode 21 and the second semiconductor layer 13, thereby ensuring the reliability of the LED.

[0064] By way of example, the maximum width W1 of the orthographic projection of the first electrode 21 on the first semiconductor layer 11 may be 17 μm, 22 μm, or 27 μm.

[0065] In the disclosed embodiment, the orthographic projection of the first electrode 21 on the first semiconductor layer 11 is circular, that is, the first electrode 21 is cylindrical, and the maximum width W1 is the diameter of the orthographic projection of the first electrode 21 on the first semiconductor layer 11 .

[0066] Exemplarily, the first electrodes 21 correspond to the grooves 14 one by one and are arranged concentrically.

[0067] In other embodiments, the orthographic projection of the first electrode 21 on the first semiconductor 11 may be a triangle, a rectangle, a hexagon, etc., that is, the first electrode 21 may be in the shape of a triangular prism, a cuboid, or a hexagonal prism, etc., and the present disclosure does not limit this.

[0068] Optionally, the spacing between two adjacent first electrodes 21 in the first direction x is equal to the spacing D4 between two adjacent first electrodes 21 in the second direction y. Since the center line of the first electrode group coincides with the center line of the corresponding first connection electrode 41 in the length direction, the spacing between two adjacent first electrodes 21 in the first direction x is equal to the spacing D1 between two adjacent first connection electrodes 41 in the first direction x, and D1 is equal to D4.

[0069] That is, the orthographic projections of the plurality of first electrodes 21 on the first semiconductor layer 11 are arranged in an array with equal spacing. In this way, the current is conducted to the first semiconductor layer 11 through the plurality of first electrodes 21, which can effectively improve the lateral expansion capability of the current and improve the uniformity of the current distribution.

[0070] Optionally, the distance between two adjacent first electrodes 21 in the first direction x and the distance D4 between two adjacent first electrodes 21 in the second direction y are both 90 to 110 μm, so that there is enough space between two adjacent first electrodes 21 to arrange the second electrode 22, thereby effectively improving the lateral expansion capability of the current.

[0071] In other embodiments, the distance between two adjacent first electrodes 21 in the first direction x may also be greater than or less than the distance D4 between two adjacent first electrodes 21 in the second direction y, and the present disclosure does not impose any limitation on this.

[0072] Optionally, the maximum width W2 of the orthographic projection of the second electrode 22 on the second semiconductor layer 13 is greater than 15 μm and less than or equal to 30 μm. In this way, the second electrode 22 can form a good ohmic contact with the second semiconductor layer 13, and when the current is conducted to the light emitting structure 10 through the plurality of second electrodes 22, the injection efficiency of the carriers can be improved, thereby improving the radiation recombination efficiency of the carriers.

[0073] For example, the maximum width W2 of the orthographic projection of the second electrode 22 on the second semiconductor layer 13 may be 17 μm, 22 μm, or 27 μm.

[0074] Exemplarily, the orthographic projection of the second electrode 22 on the second semiconductor layer 13 is a circle, and the second electrode 22 is cylindrical.

[0075] In other embodiments, the orthographic projection of the second electrode 22 on the second semiconductor 13 may be a triangle, a rectangle, a hexagon, etc., that is, the first electrode 22 may be a triangular prism, a cuboid, or a hexagonal prism, etc., and the present disclosure does not limit this.

[0076] Optionally, the spacing between adjacent first electrodes 21 and second electrodes 22 in the first direction x is equal to the spacing D5 between adjacent first electrodes 21 and second electrodes 22 in the second direction y. Since the center line of the first electrode group coincides with the center line of the corresponding first connection electrode 41 in the length direction, and the center line of the second electrode group coincides with the center line of the corresponding second connection electrode 42 in the length direction, the spacing between adjacent first electrodes 21 and second electrodes 22 in the first direction x is equal to the spacing D3 between adjacent first connection electrodes 41 and second connection electrodes 42 in the first direction x, and D3 is equal to D5.

[0077] That is, the plurality of first electrodes 21 and the plurality of second electrodes 22 can be arranged in an array with equal spacing, which is conducive to evenly distributing the current through the first electrodes 21 and the second electrodes 22 to various regions of the light emitting structure 10, thereby improving the radiation recombination efficiency of carriers.

[0078] Optionally, the spacing between the adjacent first electrodes 21 and the second electrodes 22 in the first direction x and the spacing D5 between the adjacent first electrodes 21 and the second electrodes 22 in the second direction y are both 35 μm to 85 μm. In this way, the area of ​​the region where the carrier radiation recombination occurs can be ensured to be larger, and the light-emitting area of ​​the LED can be larger, while the lateral expansion capability of the current is effectively improved, and the probability of current crowding is reduced, thereby improving the luminous efficiency of the LED, reducing the driving voltage of the LED, and improving the reliability of the LED.

[0079] In other embodiments, the interval between adjacent first electrodes 21 and second electrodes 22 in the first direction x may also be greater than or less than the interval D5 between adjacent first electrodes 21 and second electrodes 22 in the second direction y, and the present disclosure does not limit this.

[0080] Optionally, the material of the first electrode layer includes at least one of Cr, Al, TI, Ni, Pt, Au, AuGeNi alloy and AuBe alloy.

[0081] Exemplarily, the first passivation layer 30 also covers the sidewalls of the light emitting structure 10 .

[0082] like Figure 2 As shown, the surface of the first passivation layer 30 away from the light emitting structure 10 is highly flush. That is, the distance between the surface of the first passivation layer 30 away from the light emitting structure 10 and the surface of the substrate 70 are the same. This is conducive to improving the flatness of the surface where the LED pad electrode layer is located, so that the LED can be placed more stably during the die bonding process, reducing the probability of the LED being skewed and flipped. It can also reduce the probability of a gap between the solder paste and the first passivation layer 30 during die bonding, thereby improving the reliability of LED die bonding.

[0083] like Figure 1 and Figure 2 As shown, the first passivation layer 30 has a plurality of first through holes 31 exposing the first electrodes 21 and a plurality of second through holes 32 exposing the second electrodes 22 .

[0084] Optionally, the first passivation layer 30 may be at least one of a SiO2 layer, an Al2O3 layer, a SiN layer or a SiON layer. These materials have good protection and can better protect the LED, and these materials have good light transmittance and can reduce light absorption and improve the light extraction efficiency of the LED.

[0085] In other embodiments, the first passivation layer 30 may be a distributed Bragg reflection (DBR) layer, which not only plays a passivation role, but also can reflect the light emitted from the light emitting structure 10 to the first passivation layer 30 back to the light emitting structure 10, thereby improving the light extraction efficiency of the LED.

[0086] Exemplarily, the DBR layer includes a plurality of SiO2 layers and a plurality of TiO2 layers that are periodically alternately stacked. And the number of periods of the DBR layer may be 20 to 50. For example, the DBR layer may include 30 SiO2 layers and 30 TiO2 layers that are periodically alternately stacked.

[0087] Exemplarily, each first connection electrode 41 is connected to the first electrode group through a plurality of first through holes 31 , and each second connection electrode 42 is connected to the second electrode group through a plurality of second through holes 32 .

[0088] Optionally, the material of the connection electrode layer includes at least one of Cr, Al, TI, Ni, Pt and Au.

[0089] Exemplarily, the second passivation layer 50 also covers the side wall of the connecting electrode layer. The second passivation layer 50 can prevent the first pad electrode 61 and the second connecting electrode 42, the second pad electrode 62 and the first connecting electrode 41 from short-circuiting and failing, thereby ensuring good reliability of the LED. The first pad electrode 61 and the second pad electrode 62 are advantageous for connection with an external pad, and the current can be conducted to the first connecting electrode 41 through the first pad electrode 61, and to the second connecting electrode 42 through the second pad electrode 62. The pad electrode layer, the connecting electrode layer and the first electrode layer cooperate to ensure that the current can be well extended laterally to various regions of the light-emitting structure 10.

[0090] like Figure 1 and Figure 2As shown, the second passivation layer 50 has a plurality of third through holes 51 exposing the first connecting electrode 41 and a plurality of fourth through holes 52 exposing the second connecting electrode 42, the orthographic projection of each third through hole 51 on the first semiconductor layer 11 is located inside the orthographic projection of a first connecting electrode 41 on the first semiconductor layer 11, and the orthographic projection of each fourth through hole 52 on the second semiconductor layer 13 is located inside the orthographic projection of a second connecting electrode 42 on the second semiconductor layer 13.

[0091] Optionally, the second passivation layer 50 may be at least one of a SiO 2 layer, an Al 2 O 3 layer, a SiN layer or a SiON layer.

[0092] In other embodiments, the second passivation layer 50 may be a DBR layer. For example, the second passivation layer 50 may include a plurality of SiO 2 layers and a plurality of TiO 2 layers that are periodically and alternately stacked.

[0093] Optionally, the first pad electrode 61 is connected to the first connection electrode 41 through a plurality of third through holes 51. The orthographic projection of each third through hole 51 on the first semiconductor layer 11 is located between the orthographic projections of two first electrodes 21 closest to the first pad electrode 61 in one first electrode group on the first semiconductor layer 11.

[0094] Optionally, the second pad electrode 62 is connected to the second connection electrode 42 through a plurality of fourth through holes 52 , and the orthographic projection of each fourth through hole 52 on the second semiconductor layer 13 is located between the orthographic projections of two second electrodes 22 in a second electrode group closest to the second pad electrode 62 on the second semiconductor layer 13 .

[0095] Optionally, the material of the pad electrode layer includes at least one of Cr, Al, TI, Ni, Pt, Au and Sn.

[0096] like Figure 1 As shown, the second pad electrode 62 has a notch 63 at its edge. The notch 63 can effectively distinguish the second pad electrode 62 from the first pad electrode 61.

[0097] Exemplarily, the first pad electrode 61 is close to the lower side of the LED, and the second pad electrode 62 is close to the upper side of the LED.

[0098] In the embodiment of the present disclosure, each first electrode group includes five first electrodes 21, each second electrode group includes four second electrodes 22, and the edges closest to the LED are all first electrodes 21. The connection electrode layer is provided with six strip-shaped first connection electrodes 41 and five strip-shaped second connection electrodes 42, and the length of the first connection electrode 41 is greater than the length of the second connection electrode 42.

[0099] In other embodiments, the first electrode 21 , the second electrode 22 , the first connection electrode 41 , the second connection electrode 42 , the first pad electrode 61 and the second pad electrode 62 may be arranged according to the size of the LED.

[0100] Figure 3 is a top view of another LED provided in an embodiment of the present disclosure. Figure 3 and Figure 1 The difference is that Figure 3 Each first electrode group includes four first electrodes 21, each second electrode group includes five second electrodes 22, and the second electrodes 22 are arranged closest to the edge of the LED. The connecting electrode layer is provided with five strip-shaped first connecting electrodes 41 and six strip-shaped second connecting electrodes 42, and the length of the first connecting electrode 41 is less than the length of the second connecting electrode 42. And Figure 3 The first pad electrode 61 is close to the upper side of the LED, the second pad electrode 62 is close to the lower side of the LED, and a notch 63 is provided at the edge of the first pad electrode 61 .

[0101] Figure 4 FIG. 1 is a flow chart of a method for preparing an LED provided by an embodiment of the present disclosure. Figure 4 As shown, the preparation method comprises:

[0102] In step S1001 , a light-emitting structure is provided.

[0103] The light emitting structure includes a first semiconductor layer, a light emitting layer and a second semiconductor layer stacked in sequence, and the light emitting structure has a plurality of grooves extending from a surface of the second semiconductor layer away from the light emitting layer toward the first semiconductor layer.

[0104] In step S1002 , a first passivation layer is formed on the light emitting structure.

[0105] The first passivation layer covers a surface of the second semiconductor layer away from the light emitting layer.

[0106] In step S1003 , a connection electrode layer is formed on the first passivation layer.

[0107] The connecting electrode layer includes a plurality of first connecting electrodes in strips and a plurality of second connecting electrodes in strips that are alternately arranged in a first direction, the length directions of the first connecting electrodes and the second connecting electrodes are both in the second direction, and the first direction and the second direction intersect; each first connecting electrode is electrically connected to the first semiconductor layer in the plurality of grooves through a plurality of first through holes penetrating the first passivation layer, and each second connecting electrode is electrically connected to the second semiconductor layer through a plurality of second through holes penetrating the first passivation layer.

[0108] In step S1004, a second passivation layer is formed on the connection electrode layer.

[0109] The second passivation layer covers the surface of the connection electrode layer away from the light emitting structure.

[0110] In step S1005 , a pad electrode layer is formed on the second passivation layer.

[0111] The pad electrode layer includes first pad electrodes and second pad electrodes spaced apart in the second direction. The first pad electrodes penetrate the second passivation layer and are connected to the first connection electrodes. The second pad electrodes penetrate the second passivation layer and are connected to the second connection electrodes.

[0112] In the embodiment of the present disclosure, when the surface area of ​​the light-emitting structure remains unchanged, multiple first connection electrodes and multiple second connection electrodes can be more evenly spaced and distributed above the surface of the light-emitting structure. When the current is conducted through the pad electrode layer to the multiple first connection electrodes and multiple second connection electrodes arranged alternately and spaced, the probability of current gathering in a partial area of ​​the connection electrode layer can be reduced, thereby improving the lateral expansion capability of the current in the connection electrode layer. In the connection electrode layer, the current can then pass through the first connection electrode, multiple first through holes and multiple grooves, and the second connection electrode and multiple second through holes to more evenly expand laterally to the first semiconductor layer and the second semiconductor layer in each area of ​​the light-emitting structure, so as to improve the radiation recombination efficiency of the carriers, thereby improving the luminous efficiency of the LED. In addition, the lateral expansion capability of the current is improved, which can reduce the driving voltage of the LED, and can also reduce the probability of breakdown failure of the LED due to current crowding, thereby improving the reliability of the LED.

[0113] Figure 5 FIG. 1 is a flow chart of another method for preparing an LED provided by an embodiment of the present disclosure. Figure 5 As shown, the preparation method comprises:

[0114] In step S2001, a light emitting structure is formed on a substrate.

[0115] Optionally, the substrate may be a sapphire substrate.

[0116] For example, the sapphire substrate may be pretreated first, the sapphire substrate may be placed in a metal-organic chemical vapor deposition (MOCVD) reaction chamber, and the sapphire substrate may be baked for 12 to 18 minutes to clean the sapphire substrate.

[0117] Figure 6 FIG. 1 is a top view of an LED manufacturing process provided by an embodiment of the present disclosure. Figure 6As shown, the light emitting structure 10 includes a first semiconductor layer 11 , a light emitting layer 12 and a second semiconductor layer 13 stacked in sequence, and the light emitting structure 10 has a plurality of grooves 14 extending from a surface of the second semiconductor layer 13 away from the light emitting layer 12 toward the first semiconductor layer 11 .

[0118] Illustratively, a photoresist structure can be obtained on the surface of the second semiconductor layer away from the light-emitting layer through processes such as photoresist coating, exposure, and development, and the surface of the second semiconductor layer away from the light-emitting layer can be etched using the photoresist structure as a mask through methods such as inductively coupled plasma (ICP) etching, and the etching depth extends from the surface of the second semiconductor layer away from the light-emitting layer to the first semiconductor layer, and after removing the photoresist structure, a plurality of grooves exposing the first semiconductor layer are formed.

[0119] In step S2002, a first electrode layer is formed on the light emitting structure.

[0120] Figure 7 FIG. 1 is a top view of an LED manufacturing process provided by an embodiment of the present disclosure. Figure 7 As shown, the first electrode layer includes a plurality of first electrode groups and a plurality of second electrode groups, and the plurality of first electrode groups and the plurality of second electrode groups are alternately arranged in a first direction x. Each first electrode group includes a plurality of first electrodes 21 arranged in a second direction y, each first electrode 21 is located in a groove 14 and connected to the first semiconductor layer 11. Each second electrode group includes a plurality of second electrodes 22 arranged in a second direction y, and the second electrodes 22 are located on a surface of the second semiconductor layer 13 away from the light emitting layer 12 and connected to the second semiconductor layer 13. The first direction x and the second direction y intersect.

[0121] For example, a photoresist structure may be obtained on the surface of the light emitting structure 10 away from the substrate 70 by photoresist coating, exposure, development and other processes, and the first electrode layer may be formed by electron beam evaporation and stripping processes using the photoresist structure as a mask.

[0122] In other embodiments, the first electrode and the second electrode may be manufactured by different patterning processes respectively.

[0123] In step S2003 , a first passivation layer is formed on the first electrode layer.

[0124] Exemplarily, a physical vapor deposition technique or an electron beam evaporation technique can be used to deposit an initial first passivation layer on the entire surface of the first electrode layer, a photoresist structure is obtained on the initial first passivation layer by processes such as photoresist coating, exposure, and development, and the initial first passivation layer is etched using the photoresist structure as a mask by methods such as ICP etching, and the first passivation layer is formed after removing the photoresist structure. The first passivation layer covers the surface of the first electrode layer away from the light-emitting structure and the side walls of the first electrode layer, and also covers the surface of the light-emitting structure and the side walls of the light-emitting structure. The first passivation layer has a plurality of first through holes exposing the first electrode and a plurality of second through holes exposing the second electrode.

[0125] Optionally, before forming the first passivation layer, deep etching (Isolation, ISO) photolithography may be performed on the light emitting structure to form a cutting path exposing the substrate.

[0126] In step S2004, a connection electrode layer is formed on the first passivation layer.

[0127] Exemplarily, a photoresist structure can be obtained on the surface of the first passivation layer through processes such as photoresist coating, exposure, and development, and a connecting electrode layer is formed by using the photoresist structure as a mask through an electron beam evaporation process and a stripping and degumming process. The connecting electrode layer includes a plurality of first connecting electrodes in strips and a plurality of second connecting electrodes in strips that are alternately arranged in a first direction, and the length directions of the first connecting electrodes and the second connecting electrodes are both in the second direction. Each first connecting electrode is connected to the first electrode group through a plurality of first through holes, and each second connecting electrode is connected to the second electrode group through a plurality of second through holes.

[0128] In step S2005 , a second passivation layer is formed on the connection electrode layer.

[0129] Exemplarily, a physical vapor deposition technique or an electron beam evaporation technique can be used to deposit an initial second passivation layer on the entire surface of the connecting electrode layer, and a photoresist structure is obtained on the initial second passivation layer by processes such as photoresist coating, exposure, and development. The initial second passivation layer is etched using the photoresist structure as a mask by methods such as ICP etching. After removing the photoresist structure, a second passivation layer is formed. The second passivation layer covers the surface of the connecting electrode layer away from the light-emitting structure and the side walls of the connecting electrode layer. The second passivation layer has a plurality of third through holes exposing the first connecting electrode and a plurality of fourth through holes exposing the second connecting electrode.

[0130] In step S2006 , a pad electrode layer is formed on the second passivation layer.

[0131] Exemplarily, a photoresist structure can be obtained on the surface of the second passivation layer by photoresist coating, exposure, development and other processes, and a pad electrode layer is formed by an electron beam evaporation process and a stripping process using the photoresist structure as a mask. The pad electrode layer includes a first pad electrode and a second pad electrode arranged at intervals in the second direction, the first pad electrode is connected to the first connecting electrode through a plurality of third through holes, and the second pad electrode is connected to the second connecting electrode through a plurality of fourth through holes.

[0132] Optionally, after completing step S2006, the substrate may be scratched along the cutting path by a scratching process to obtain an LED.

[0133] Optionally, the structure, shape, width, material, number of cycles and quantity of each layer can be found in Figures 1 to 3 The detailed description of the related embodiments is omitted here.

[0134] Figure 8 FIG. 1 is a top view of an LED in a control group provided by an embodiment of the present disclosure. Figure 8 As shown, the LED comprises a substrate 70', a light emitting structure 10', a connecting electrode layer, a second passivation layer 50' and a pad electrode layer stacked in sequence. The light emitting structure 10' comprises a first semiconductor layer 11', a light emitting layer 12' and a second semiconductor layer 13' stacked in sequence, and the light emitting structure 10' has a groove 14' extending from a surface of the second semiconductor layer 13' away from the light emitting layer 12' to the first semiconductor layer 11'.

[0135] The connection electrode layer includes a first connection electrode 41' and a second connection electrode 42'. The first connection electrode 41' is located in the groove 14' and connected to the first semiconductor layer 11'. The second connection electrode 42' is located on the surface of the second semiconductor layer 13' and connected to the second semiconductor layer 13'. The first connection electrode 41' and the second connection electrode 42' are both composed of a strip electrode extending in the first direction x' and a plurality of strip electrodes extending in the second direction y'.

[0136] The second passivation layer 50 ′ has a plurality of third through holes 51 ′ exposing the first connection electrodes 41 ′ and a plurality of fourth through holes 52 ′ exposing the second connection electrodes 42 ′.

[0137] The pad electrode layer includes first and second pad electrodes 61' and 62' spaced apart in the second direction y'. The first pad electrode 61' is connected to the first connection electrode 41' through a plurality of third through holes 51'. The second pad electrode 62' is connected to the second connection electrode 42' through a plurality of fourth through holes 52'.

[0138] The voltage, brightness and electrostatic breakdown voltage of the LED provided by the embodiment of the present disclosure are exemplarily described below. Figure 1 The LED in the relevant embodiment, the experimental group two fingers Figure 3 In the relevant embodiment, the control group refers to Figure 8 The difference between the control group and the experimental group in the LED of the related embodiment is that the LED of the control group is not provided with the first electrode layer, and the shape of the connecting electrode layer is the same as that of the LED of the experimental group. Figure 1 , Figure 3 different.

[0139] Multiple control groups and multiple experimental groups with the same emission wavelength and photoluminescence value were tested. The voltage and brightness of the LED were tested under 200mA current, and the electrostatic breakdown voltage of the LED was obtained by electrostatic discharge simulator testing. Table 1 shows the test results of the control group and the experimental group.

[0140] Table 1 Test results

[0141]

[0142] After testing, it was found that under the condition of 200mA current, the voltage of the control group was 3.24V, and the voltage of the experimental group 1 was 2.60V, which was 0.64V lower than that of the control group, and the voltage was reduced by about 19.7%. The voltage of the experimental group 2 was 2.62V, which was also lower than that of the control group. That is, the driving voltage of the LED in the embodiment of the present disclosure was reduced.

[0143] The luminous flux of the control group was 23.64lm and the luminous intensity was 6974.68mcd. The luminous flux of the experimental group one was 27.99lm and the luminous intensity was 8237.25mcd, which was 4.35lm higher than that of the control group, and the luminous flux was increased by about 18.4%. The luminous flux of the experimental group two was 29.49lm and the luminous intensity was 8691.78mcd, which was higher than that of the control group.

[0144] The electrostatic breakdown voltage of the control group was 6500V, the electrostatic breakdown voltage of the experimental group one was 9500V, and the electrostatic breakdown voltage of the experimental group two was 9000V. The electrostatic breakdown voltages of the two experimental groups were higher than that of the control group.

[0145] Therefore, the LED provided by the embodiment of the present disclosure can improve the luminous efficiency and reliability of the LED and reduce the driving voltage of the LED.

[0146] The above description does not limit the present disclosure in any form. Although the present disclosure has been disclosed as above through the embodiments, it is not used to limit the present disclosure. Any technician familiar with the profession can make some changes or modifications to equivalent embodiments of equivalent changes using the technical contents disclosed above without departing from the scope of the technical solution of the present disclosure. However, any simple modification, equivalent change and modification made to the above embodiments based on the technical essence of the present disclosure without departing from the content of the technical solution of the present disclosure still falls within the scope of the technical solution of the present disclosure.

Claims

1. A light emitting diode, characterized in that: The invention comprises a light emitting structure (10), a first passivation layer (30), a connecting electrode layer, a second passivation layer (50) and a pad electrode layer, The light emitting structure (10) comprises a first semiconductor layer (11), a light emitting layer (12) and a second semiconductor layer (13) which are stacked in sequence, and the light emitting structure (10) has a plurality of grooves (14) extending from a surface of the second semiconductor layer (13) away from the light emitting layer (12) toward the first semiconductor layer (11); The first passivation layer (30) covers a surface of the second semiconductor layer (13) away from the light-emitting layer (12); The connecting electrode layer comprises a plurality of first connecting electrodes (41) and a plurality of second connecting electrodes (42) in the form of strips which are alternately arranged in a first direction, the length directions of the first connecting electrodes (41) and the second connecting electrodes (42) are both in the second direction, and the first direction and the second direction intersect; Each of the first connecting electrodes (41) is electrically connected to the first semiconductor layer (11) in the plurality of grooves (14) through a plurality of first through holes (31) penetrating the first passivation layer (30), and each of the second connecting electrodes (42) is electrically connected to the second semiconductor layer (13) through a plurality of second through holes (32) penetrating the first passivation layer (30); The second passivation layer (50) covers the surface of the connecting electrode layer away from the light emitting structure (10); The pad electrode layer is located on a surface of the second passivation layer (50) away from the connecting electrode layer, and the pad electrode layer includes a first pad electrode (61) and a second pad electrode (62) arranged at intervals in the second direction, the first pad electrode (61) passes through the second passivation layer (50) and is connected to the plurality of first connecting electrodes (41), and the second pad electrode (62) passes through the second passivation layer (50) and is connected to the plurality of second connecting electrodes (42).

2. The light emitting diode according to claim 1, characterized in that: The distance between two adjacent first connecting electrodes (41) in the first direction is equal to the distance between two adjacent second connecting electrodes (42) in the first direction.

3. The light emitting diode according to claim 2, characterized in that: The distance between two adjacent first connecting electrodes (41) in the first direction and the distance between two adjacent second connecting electrodes (42) in the first direction are both 90 μm to 110 μm.

4. The light emitting diode according to any one of claims 1 to 3, characterized in that: The distance between adjacent first connecting electrodes (41) and second connecting electrodes (42) in the first direction is 35 μm to 85 μm.

5. The light emitting diode according to any one of claims 1 to 3, characterized in that: The light emitting diode further comprises a first electrode layer, the first electrode layer comprises a plurality of first electrode groups and a plurality of second electrode groups, the plurality of first electrode groups and the plurality of second electrode groups are alternately arranged in the first direction; Each of the first electrode groups comprises a plurality of first electrodes (21) arranged at intervals in the second direction, each of the first electrodes (21) is located in one of the grooves (14) and connected to the first semiconductor layer (11), and each of the first connecting electrodes (41) is connected to a first electrode (21) in the first electrode group through a plurality of the first through holes (31); Each of the second electrode groups comprises a plurality of second electrodes (22) arranged at intervals in the second direction, the second electrodes (22) being located on a surface of the second semiconductor layer (13) away from the light-emitting layer (12) and connected to the second semiconductor layer (13), and each of the second connecting electrodes (42) is connected to a second electrode (22) in the second electrode group via a plurality of the second through holes (32).

6. The light emitting diode according to claim 5, characterized in that: The ratio of the maximum width of the orthographic projection of the first electrode (21) on the first semiconductor layer (11) to the maximum width of the orthographic projection of the groove (14) on the first semiconductor layer (11) is greater than 0.5 and less than or equal to 0.

95.

7. The light emitting diode according to claim 5, characterized in that: The distance between two adjacent first electrodes (21) in the first direction is equal to the distance between two adjacent first electrodes (21) in the second direction.

8. The light emitting diode according to claim 5, characterized in that: The spacing between adjacent first electrodes (21) and second electrodes (22) in the first direction is equal to the spacing between adjacent first electrodes (21) and second electrodes (22) in the second direction.

9. The light emitting diode according to any one of claims 1 to 3 and claims 6 to 8, characterized in that: The first semiconductor layer (11) is a P-type semiconductor layer, and the second semiconductor layer (13) is an N-type semiconductor layer.

10. A method for preparing a light emitting diode, characterized in that: include: A light-emitting structure (10) is provided, the light-emitting structure (10) comprising a first semiconductor layer (11), a light-emitting layer (12) and a second semiconductor layer (13) stacked in sequence, the light-emitting structure (10) having a plurality of grooves (14) extending from a surface of the second semiconductor layer (13) away from the light-emitting layer (12) toward the first semiconductor layer (11); forming a first passivation layer (30) on the light emitting structure (10), wherein the first passivation layer (30) covers a surface of the second semiconductor layer (13) away from the light emitting layer (12); A connection electrode layer is formed on the first passivation layer (30), the connection electrode layer comprising a plurality of first connection electrodes (41) in strip shape and a plurality of second connection electrodes (42) in strip shape which are alternately arranged in a first direction, the length directions of the first connection electrodes (41) and the second connection electrodes (42) are both in a second direction, and the first direction and the second direction intersect; each of the first connection electrodes (41) is electrically connected to the first semiconductor layer (11) in the plurality of grooves (14) through a plurality of first through holes (31) penetrating the first passivation layer (30), and each of the second connection electrodes (42) is electrically connected to the second semiconductor layer (13) through a plurality of second through holes (32) penetrating the first passivation layer (30); forming a second passivation layer (50) on the connecting electrode layer, wherein the second passivation layer (50) covers a surface of the connecting electrode layer away from the light emitting structure (10); A pad electrode layer is formed on the second passivation layer (50), the pad electrode layer comprising a first pad electrode (61) and a second pad electrode (62) arranged at intervals in the second direction, the first pad electrode (61) penetrating the second passivation layer (50) and connected to the plurality of first connection electrodes (41), and the second pad electrode (62) penetrating the second passivation layer (50) and connected to the plurality of second connection electrodes (42).

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