A method for preparing a transparent conductive layer in a perovskite solar cell and its application

Abstract

The present invention provides a preparation method and application of a transparent conductive layer in a perovskite solar cell. The preparation method comprises the following steps: using a radio frequency sputtering method to deposit a layer of oxygen-rich transparent conductive seed layer on the surface of a battery substrate, and then using a direct current sputtering method to deposit a layer of transparent conductive thickening layer on the oxygen-rich transparent conductive seed layer to obtain a transparent conductive layer. The present invention makes the crystal orientation of the entire transparent conductive layer more regular. This regular crystal orientation is beneficial to improving the quality of the crystal, reducing grain boundaries and defects, and making the transmission of electrons in the crystal smoother; in addition, the oxygen-rich transparent conductive seed layer can enhance the adhesion between the transparent conductive layer and the battery substrate, so that the crystals of the transparent conductive layer are better combined with the surface of the battery substrate; in addition, the oxygen-rich transparent conductive seed layer can not only better resist the erosion of external chemicals, but also prevent ion migration, which is very important for improving the reliability and service life of the device.

Description

Technical Field

[0001] The present invention belongs to the technical field of solar cells, and in particular relates to a preparation method and application of a transparent conductive layer in a perovskite solar cell. Background Art

[0002] Organic-inorganic hybrid perovskite solar cells have attracted extensive attention from academia and industry due to their many advantages such as adjustable band gap and low cost. They are mainly composed of the following parts: bottom electrode, hole transport layer, perovskite layer, electron transport layer and back electrode. The back electrode is an indispensable part, which mainly collects the charges / holes transmitted from the perovskite absorption layer. The commonly used back electrodes are divided into metal electrodes, metal oxide electrodes and carbon electrodes. At present, the industry commonly uses a composite electrode of metal oxide + metal electrode (such as a combination of ITO + Cu), which takes into account the high stability of metal oxides and the conductivity of metal electrodes.

[0003] In the preparation process of metal oxides (such as ITO), the oxygen content in the process gas is an important parameter and has many effects on battery performance. Appropriate oxygen content can provide a suitable carrier concentration, so that the metal oxide (such as ITO) has good conductivity. If the oxygen content is too high, too many oxygen vacancy defects will be generated, which may capture electrons and reduce electron mobility, thereby reducing the conductivity of the metal oxide (such as ITO). For example, when the oxygen vacancy concentration increases, electrons will be more scattered when transmitted in the metal oxide (such as ITO) film, resulting in increased resistance. On the contrary, when the oxygen content is too low, it may not provide enough carriers, which will also affect its conductivity. In addition, how to improve the growth and orientation of metal oxide (such as ITO) crystals also greatly affects the overall electrical properties.

[0004] At present, DC sputtering is the most commonly used method in the industry to prepare metal oxide (such as ITO) layers, but the metal oxide (such as ITO) films prepared by DC sputtering may be slightly inferior in terms of crystallinity and density. Since the energy of ion bombardment of the target material during DC sputtering is relatively concentrated, it may cause more defects and vacancies in the film, affecting the crystal quality and electrical properties of the film.

[0005] Therefore, how to make the crystal orientation of the metal oxide layer more regular, thereby improving the crystal quality, reducing grain boundaries and defects, and improving the transmission rate of electrons in the crystal is a technical problem that needs to be solved urgently. Summary of the invention

[0006] In view of the deficiencies of the prior art, the purpose of the present invention is to provide a method for preparing a transparent conductive layer in a perovskite solar cell and its application. The present invention uses an oxygen-rich transparent conductive seed layer to make the crystal orientation of the entire transparent conductive layer more regular, which is beneficial to improving the quality of the crystal, reducing grain boundaries and defects, and making the transmission of electrons in the crystal smoother; in addition, the adhesion between the transparent conductive layer and the battery substrate can be enhanced, so that the crystals of the transparent conductive layer are better combined with the surface of the battery substrate; in addition, because the oxygen-rich transparent conductive seed layer makes the crystals in the transparent conductive layer grow more densely and orderly, it can not only better resist the erosion of external chemical substances, but also prevent ion migration to a certain extent, which is very important for improving the reliability and service life of the device.

[0007] In order to achieve the purpose of the invention, the present invention adopts the following technical solutions:

[0008] In a first aspect, the present invention provides a method for preparing a transparent conductive layer in a perovskite solar cell, the preparation method comprising the following steps:

[0009] A layer of oxygen-rich transparent conductive seed layer is deposited on the surface of the battery substrate by radio frequency sputtering, and then a layer of transparent conductive thickening layer is deposited on the oxygen-rich transparent conductive seed layer by direct current sputtering to obtain the transparent conductive layer.

[0010] The present invention first obtains an oxygen-rich transparent conductive seed layer with low resistivity, good density and high cleanliness by radio frequency sputtering, and then uses direct current sputtering to perform epitaxial growth along the lattice direction of the seed layer on the basis of the oxygen-rich transparent conductive seed layer to obtain a transparent conductive thickening layer, so that the crystal orientation of the entire transparent conductive layer is more regular. This regular crystal orientation is beneficial to improving the quality of the crystal, reducing grain boundaries and defects, and making the transmission of electrons in the crystal smoother; in addition, the oxygen-rich transparent conductive seed layer can enhance the adhesion between the transparent conductive layer and the battery substrate, so that the crystals of the transparent conductive layer are better combined with the surface of the battery substrate, and the transparent conductive layer is prevented from peeling off or stratification during subsequent processing or use; in addition, because the oxygen-rich transparent conductive seed layer makes the crystals in the transparent conductive layer grow more densely and orderly, it can not only better resist the erosion of external chemical substances, but also prevent ion migration to a certain extent, which is very important for improving the reliability and service life of the device.

[0011] The preparation method provided by the invention does not require complicated operations and has a simple process.

[0012] Preferably, the battery substrate comprises a conductive substrate, a first carrier transport layer, a perovskite absorption layer and a second carrier transport layer stacked in sequence, and the oxygen-rich transparent conductive seed layer is close to the second carrier transport layer.

[0013] Preferably, the conductive substrate includes any one of ITO (indium tin oxide) conductive glass, FTO (fluorine-doped tin oxide) conductive glass or IZO (indium zinc oxide) conductive glass.

[0014] Preferably, the first carrier transport layer and the second carrier transport layer transport charges of opposite electrical properties.

[0015] Preferably, the first carrier transport layer is a hole transport layer, and the second carrier transport layer is an electron transport layer. For example, the hole transport layer may be a nickel oxide layer, and the electron transport layer may be a C 60 layer and / or SnO 2 Layers, etc.

[0016] Preferably, the chemical formula of the perovskite absorber layer is ABX 3 , wherein A is any one of formamidinium ion, methylamine ion or cesium ion or a combination of at least two thereof, B is lead ion and / or tin ion, and X is a halogen ion.

[0017] Preferably, the specific parameters of the radio frequency sputtering method include:

[0018] The RF power is 100-300W, for example, it can be 100W, 150W, 200W, 250W or 300W, etc. The pressure of the sputtering gas is 0.1-10Pa, for example, it can be 0.1Pa, 1Pa, 3Pa, 5Pa, 7Pa or 9Pa, etc. The volume proportion of oxygen in the sputtering gas is 10-15%, for example, it can be 10%, 11%, 12%, 13%, 14% or 15%, etc.

[0019] In the present invention, radio frequency sputtering can obtain an oxygen-rich transparent conductive seed layer with lower resistivity, better compactness and higher cleanliness, and radio frequency sputtering can reduce damage to the battery substrate.

[0020] In the present invention, the sputtering gas of RF sputtering includes inert gas and oxygen. The oxygen content with a suitable volume ratio helps the metal atoms in the oxygen-rich transparent conductive seed layer to be better arranged to form a cubic phase structure with good crystal orientation. This structure helps to improve the electrical and optical properties of the film, and also provides support and positive guidance for the crystal growth of the DC sputtered transparent conductive thickening layer.

[0021] Preferably, the specific parameters of the DC sputtering method include:

[0022] The DC voltage is 300-2000V, for example, it can be 300V, 500V, 1000V, 1500V or 2000V, etc. The sputtering current is 0.01-1A, for example, it can be 0.01A, 0.1A, 0.3A, 0.5A, 0.7A, 0.9A or 1A, etc. The pressure of the sputtering gas is 0.1-10Pa, for example, it can be 0.1Pa, 1Pa, 3Pa, 5Pa, 7Pa or 9Pa, etc. The volume proportion of oxygen in the sputtering gas is less than 5%, for example, it can be 4.5%, 4%, 3.5%, 3% or 2%, etc.

[0023] In the present invention, DC sputtering can achieve a higher deposition rate, and cooperates with RF sputtering to make the deposited film more uniform and dense, and can better control the growth process of the film to obtain a film with higher crystallinity and more consistent crystal orientation.

[0024] In the present invention, the sputtering gas of DC sputtering includes an inert gas and oxygen. The oxygen content with a suitable volume ratio helps to balance the oxygen vacancy concentration in the transparent conductive layer. Oxygen vacancies are one of the main sources of carriers in the transparent conductive layer. An appropriate amount of oxygen vacancies can provide sufficient carriers (electrons) to make the transparent conductive layer have good conductivity.

[0025] Preferably, the thickness of the oxygen-rich transparent conductive seed layer is 4-12 nm, for example, 4 nm, 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, 11 nm or 12 nm.

[0026] In the present invention, an oxygen-rich transparent conductive seed layer of appropriate thickness helps to avoid damage caused by the deposition process of the transparent conductive thickening layer, and improves the crystal quality and electrical properties of the transparent conductive layer. If the thickness of the oxygen-rich transparent conductive seed layer is too thin, it is difficult for itself to form a suitable crystal orientation and it is difficult to guide the transparent conductive thickening layer. At the same time, if the seed layer is too thin, its conductivity is poor, resulting in the open circuit voltage and fill factor of the perovskite solar cell not being significantly improved; if the thickness of the oxygen-rich transparent conductive seed layer is too thick, it will seriously hinder the transmission of carriers, resulting in a sharp attenuation of the current of the perovskite solar cell and a decrease in efficiency.

[0027] Preferably, the thickness ratio of the oxygen-rich transparent conductive seed layer to the transparent conductive thickening layer is 1:(10-25), for example, it can be 1:10, 1:11, 1:12, 1:13, 1:15, 1:17, 1:20, 1:22 or 1:25, etc.

[0028] In the present invention, the oxygen-rich transparent conductive seed layer and the transparent conductive thickening layer with a suitable thickness ratio can effectively improve the overall conductivity of the electrode. The oxygen-rich transparent conductive seed layer with lower energy reduces the damage to the substrate and obtains a film layer with lower resistivity, better density and higher crystallinity. It can also effectively guide the crystal growth of the transparent conductive thickening layer. The thickening layer will grow epitaxially along the lattice direction of the seed layer, thereby making the crystal orientation of the entire transparent conductive layer more regular, which is beneficial to improving the overall crystallization quality and reducing grain boundaries and defects.

[0029] Preferably, the oxygen-rich transparent conductive seed layer and the transparent conductive thickening layer are made of the same material.

[0030] Preferably, the oxygen-rich transparent conductive seed layer and the transparent conductive thickening layer are both made of transparent conductive metal oxide.

[0031] Preferably, the transparent conductive metal oxide includes any one of ITO (indium tin oxide), IZO (zinc-doped indium oxide) or IGO (gallium-doped indium oxide).

[0032] In a second aspect, the present invention provides an application of the preparation method described in the first aspect in a perovskite solar cell.

[0033] Preferably, the perovskite solar cell comprises a conductive substrate, a first carrier transport layer, a perovskite absorption layer, a second carrier transport layer, a transparent conductive layer prepared by the preparation method described in the first aspect, and a metal electrode, which are stacked in sequence.

[0034] Preferably, the material of the metal electrode includes any one of Ag, Au or Cu, or a combination of at least two of them.

[0035] Preferably, the thickness of the transparent conductive layer is 50-400 nm, for example, it may be 50 nm, 60 nm, 70 nm, 80 nm, 90 nm, 100 nm, 110 nm, 120 nm, 150 nm, 200 nm, 250 nm, 300 nm, 350 nm or 400 nm.

[0036] The numerical range described in the present invention not only includes the point values ​​listed above, but also includes any point values ​​between the above numerical ranges that are not listed. Due to space limitations and for the sake of simplicity, the present invention no longer exhaustively lists the specific point values ​​included in the range.

[0037] Compared with the prior art, the present invention has the following beneficial effects:

[0038] (1) The present invention first obtains an oxygen-rich transparent conductive seed layer with low resistivity, good density and high cleanliness by radio frequency sputtering, and then uses direct current sputtering to perform epitaxial growth along the lattice direction of the seed layer on the basis of the oxygen-rich transparent conductive seed layer to obtain a transparent conductive thickening layer, thereby making the crystal orientation of the entire transparent conductive layer more regular. This regular crystal orientation is beneficial to improving the quality of the crystal, reducing grain boundaries and defects, and making the transmission of electrons in the crystal smoother; in addition, the oxygen-rich transparent conductive seed layer can enhance the adhesion between the transparent conductive layer and the battery substrate, so that the crystals of the transparent conductive layer are better combined with the surface of the battery substrate, preventing the transparent conductive layer from peeling off or stratification during subsequent processing or use; in addition, because the oxygen-rich transparent conductive seed layer makes the crystals in the transparent conductive layer grow more densely and orderly, it can not only better resist the erosion of external chemical substances, but also prevent ion migration to a certain extent, which is very important for improving the reliability and service life of the device.

[0039] (2) The preparation method provided by the present invention does not require complicated operations and has a simple process. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] Figure 1 This is a schematic diagram of the structure of a perovskite solar cell provided in Application Example 1 of the present invention.

[0041] Among them, 1-ITO conductive glass; 2-nickel oxide layer; 3-perovskite absorption layer; 4-C 60 Layer; 5-SnO 2 layer; 6-transparent conductive layer; 61-oxygen-rich transparent conductive seed layer; 62-transparent conductive thickening layer; 7-Cu electrode. DETAILED DESCRIPTION

[0042] The technical solution of the present invention is further described below by specific implementation methods. It should be understood by those skilled in the art that the embodiments are only to help understand the present invention and should not be regarded as specific limitations of the present invention.

[0043] Example 1

[0044] This embodiment provides a method for preparing a transparent conductive layer in a perovskite solar cell, the preparation method comprising the following steps:

[0045] (1) A 6 nm thick oxygen-rich transparent conductive seed layer is deposited on the surface of the battery substrate by radio frequency sputtering.

[0046] Among them, the specific parameters of the RF sputtering method include:

[0047] The target material is ITO, the RF power is 200W, the pressure of the sputtering gas is 5Pa, and the volume proportion of oxygen in the sputtering gas is 12%.

[0048] (2) A transparent conductive thickening layer with a thickness of 120 nm is deposited on the oxygen-rich transparent conductive seed layer by a direct current sputtering method, and the thickness ratio of the oxygen-rich transparent conductive seed layer to the transparent conductive thickening layer is 1:20, thereby obtaining a transparent conductive layer.

[0049] Among them, the specific parameters of the DC sputtering method include:

[0050] The target material is ITO, the DC voltage is 1000V, the sputtering current is 0.5A, the pressure of the sputtering gas is 5Pa, and the volume proportion of oxygen in the sputtering gas is 2%.

[0051] Example 2

[0052] This embodiment provides a method for preparing a transparent conductive layer in a perovskite solar cell, the preparation method comprising the following steps:

[0053] (1) A 4 nm thick oxygen-rich transparent conductive seed layer is deposited on the surface of the battery substrate by radio frequency sputtering.

[0054] Among them, the specific parameters of the RF sputtering method include:

[0055] The target material is ITO, the RF power is 100W, the pressure of the sputtering gas is 10Pa, and the volume proportion of oxygen in the sputtering gas is 15%.

[0056] (2) A transparent conductive thickening layer with a thickness of 100 nm is deposited on the oxygen-rich transparent conductive seed layer by a direct current sputtering method, and the thickness ratio of the oxygen-rich transparent conductive seed layer to the transparent conductive thickening layer is 1:25, thereby obtaining a transparent conductive layer.

[0057] Among them, the specific parameters of the DC sputtering method include:

[0058] The target material is ITO, the DC voltage is 300V, the sputtering current is 0.1A, the pressure of the sputtering gas is 10Pa, and the volume proportion of oxygen in the sputtering gas is 4.5%.

[0059] Example 3

[0060] This embodiment provides a method for preparing a transparent conductive layer in a perovskite solar cell, the preparation method comprising the following steps:

[0061] (1) A 10 nm thick oxygen-rich transparent conductive seed layer is deposited on the surface of the battery substrate by radio frequency sputtering.

[0062] Among them, the specific parameters of the RF sputtering method include:

[0063] The target material is FTO, the RF power is 300W, the pressure of the sputtering gas is 1Pa, and the volume proportion of oxygen in the sputtering gas is 10%.

[0064] (2) A transparent conductive thickening layer with a thickness of 150 is deposited on the oxygen-rich transparent conductive seed layer by a direct current sputtering method, and the thickness ratio of the oxygen-rich transparent conductive seed layer to the transparent conductive thickening layer is 1:15, thereby obtaining a transparent conductive layer.

[0065] Among them, the specific parameters of the DC sputtering method include:

[0066] The target material is FTO, the DC voltage is 2000V, the sputtering current is 1A, the pressure of the sputtering gas is 1Pa, and the volume proportion of oxygen in the sputtering gas is 1%.

[0067] Example 4

[0068] The difference between this embodiment and the first embodiment is that the sputtering time of the radio frequency sputtering method is adjusted so that the thickness of the oxygen-rich transparent conductive seed layer is 9 nm.

[0069] The rest of the preparation methods and parameters were the same as those in Example 1.

[0070] Example 5

[0071] The difference between this embodiment and embodiment 1 is that the sputtering time of the radio frequency sputtering method is adjusted so that the thickness of the oxygen-rich transparent conductive seed layer is 3 nm.

[0072] The rest of the preparation methods and parameters were the same as those in Example 1.

[0073] Example 6

[0074] The difference between this embodiment and embodiment 1 is that the sputtering time of the radio frequency sputtering method is adjusted so that the thickness of the oxygen-rich transparent conductive seed layer is 12 nm.

[0075] The rest of the preparation methods and parameters were the same as those in Example 1.

[0076] Example 7

[0077] The difference between this embodiment and the first embodiment is that the volume proportion of oxygen in the sputtering gas of the radio frequency sputtering method is 8%.

[0078] The rest of the preparation methods and parameters were the same as those in Example 1.

[0079] Example 8

[0080] The difference between this embodiment and the first embodiment is that the volume proportion of oxygen in the sputtering gas of the radio frequency sputtering method is 20%.

[0081] The rest of the preparation methods and parameters were the same as those in Example 1.

[0082] Example 9

[0083] The difference between this embodiment and the first embodiment is that the volume proportion of oxygen in the sputtering gas of the DC sputtering method is 5%.

[0084] The rest of the preparation methods and parameters were the same as those in Example 1.

[0085] Comparative Example 1

[0086] The difference between this comparative example and Example 1 is that no oxygen-rich transparent conductive seed layer is provided, that is, step (1) is not performed, and the thickness of the transparent conductive thickening layer is adjusted to 126 nm.

[0087] The rest of the preparation methods and parameters were the same as those in Example 1.

[0088] Application Example 1

[0089] This application example provides a perovskite solar cell, and its structural schematic diagram is as follows Figure 1 As shown, it includes an ITO conductive glass 1, a nickel oxide layer 2 (thickness 12nm), a perovskite absorption layer 3 (thickness 400nm), and a C 60 Layer (thickness 20nm) 4, SnO 2 layer (thickness: 20 nm) 5, transparent conductive layer 6 and Cu electrode (thickness: 100 nm) 7.

[0090] The transparent conductive layer 6 includes an oxygen-rich transparent conductive seed layer 61 and a transparent conductive thickening layer 62 which are stacked, and the transparent conductive thickening layer 62 is close to the Cu electrode 7 .

[0091] This application example also provides a method for preparing the above-mentioned perovskite solar cell, comprising the following steps:

[0092] (1) A nickel oxide layer was prepared on the ITO conductive glass by magnetron sputtering.

[0093] (2) A perovskite absorption layer with the chemical formula of Cs is prepared on the nickel oxide layer by solution spin coating. 0.05 FA 0.8 MA 0.15 PbI 0.85 Br 0.15 .

[0094] (3) Using thermal evaporation method, C is prepared on the perovskite absorption layer in sequence. 60 Layer and SnO 2 layer.

[0095] (4) Using the preparation method described in Example 1, SnO 2An oxygen-rich transparent conductive seed layer and a transparent conductive thickening layer are sequentially prepared on the layer.

[0096] (5) A Cu electrode is prepared on the transparent conductive thickened layer by thermal evaporation.

[0097] Application Example 2-9

[0098] The difference between Application Example 2-9 and Application Example 1 is that in SnO 2 The methods for sequentially preparing the oxygen-rich transparent conductive seed layer and the transparent conductive thickening layer on the layers are respectively the preparation methods described in Examples 2-9.

[0099] The preparation method and parameters are consistent with those of Application Example 1.

[0100] Application Comparative Example 1

[0101] The difference between this comparative example and application example 1 is that in SnO 2 The method for sequentially preparing the oxygen-rich transparent conductive seed layer and the transparent conductive thickening layer on the layer adopts the preparation method described in Comparative Example 1.

[0102] The preparation method and parameters are consistent with those of Application Example 1.

[0103] Performance Testing

[0104] 1. Perform photoelectric testing on the perovskite solar cells provided in the above application examples and comparative application examples.

[0105] Test conditions include: AM1.5, 1000W / m 2 , 25±2℃.

[0106] The test results are shown in Table 1.

[0107] Table 1

[0108]

[0109]

[0110] 2. Perform stability tests on the perovskite solar cells provided in the above-mentioned Application Example 1, Application Examples 4-9 and Application Comparative Example 1.

[0111] The test conditions include: unpackaged batteries, placed in a temperature and humidity controlled environment (25°C, 40% RH) for 30 days.

[0112] The test results are shown in Table 2.

[0113] Table 2

[0114]

[0115] Note: The batteries used for stability testing and efficiency testing are not all from the same batch.

[0116] analyze:

[0117] As can be seen from Table 1 and Table 2, the present invention utilizes the oxygen-rich transparent conductive seed layer and the transparent conductive thickening layer to cooperate with each other, so that the crystal orientation of the entire transparent conductive layer is more regular, and this regular crystal orientation is conducive to improving the quality of the crystal, reducing grain boundaries and defects, and making the transmission of electrons in the crystal smoother; in addition, since the oxygen-rich transparent conductive seed layer makes the crystals in the transparent conductive layer grow more dense and orderly, it can not only better resist the erosion of external chemicals, but also prevent ion migration to a certain extent, which is very important for improving the reliability and service life of the device. The perovskite solar cell prepared based on this shows excellent photoelectric conversion rate and stability.

[0118] It can be seen from Application Examples 1 and 4-6 that an appropriate thickness of the oxygen-rich transparent conductive seed layer helps to obtain a perovskite solar cell with excellent overall properties. If the thickness is too thin, the open circuit voltage and fill factor of the perovskite solar cell will not be significantly improved; if the thickness is thicker, it will seriously hinder the transmission of carriers, causing the current of the perovskite solar cell to decay sharply and the efficiency to decrease.

[0119] It can be seen from Application Examples 1 and 7-8 that if the volume proportion of oxygen in the sputtering gas of the RF sputtering method is too small, the crystallinity itself is insufficient and it is difficult to assist the crystal growth of the thickened layer, resulting in a decrease in overall performance; if the volume proportion of oxygen in the sputtering gas of the RF sputtering method is too large, the interface work function does not match, resulting in a greater opening voltage loss.

[0120] It can be seen from Application Examples 1 and 9 that if the volume proportion of oxygen in the sputtering gas of the DC sputtering method is too large, the work function of the entire transparent conductive layer is difficult to match that of SnO 2 layer, resulting in opening pressure loss and decreased filling factor.

[0121] It can be seen from Application Example 1 and Comparative Example 1 that if an oxygen-rich transparent conductive seed layer is not provided, DC sputtering will damage the lower interface, resulting in attenuation of the current and fill factor. In addition, the decrease in its crystallinity causes interface mismatch, leading to a significant attenuation of various parameters.

[0122] The applicant declares that the present invention illustrates the process method of the present invention through the above-mentioned embodiments, but the present invention is not limited to the above-mentioned process steps, that is, it does not mean that the present invention must rely on the above-mentioned process steps to be implemented. Those skilled in the art should understand that any improvement of the present invention, equivalent replacement of the raw materials selected by the present invention, addition of auxiliary components, selection of specific methods, etc., all fall within the protection scope and disclosure scope of the present invention.

Claims

1. A method for preparing a transparent conductive layer in a perovskite solar cell, characterized in that: The preparation method comprises the following steps: A layer of oxygen-rich transparent conductive seed layer is deposited on the surface of the battery substrate by radio frequency sputtering, and then a layer of transparent conductive thickening layer is deposited on the oxygen-rich transparent conductive seed layer by direct current sputtering to obtain the transparent conductive layer.

2. The preparation method according to claim 1, characterized in that: The battery substrate comprises a conductive substrate, a first carrier transport layer, a perovskite absorption layer and a second carrier transport layer which are stacked in sequence, and the oxygen-rich transparent conductive seed layer is close to the second carrier transport layer; Preferably, the first carrier transport layer and the second carrier transport layer transport charges of opposite electrical properties.

3. The preparation method according to claim 1 or 2, characterized in that: The specific parameters of the radio frequency sputtering method include: The radio frequency power is 100-300W, the pressure of the sputtering gas is 0.1-10Pa, and the volume proportion of oxygen in the sputtering gas is 10-15%.

4. The preparation method according to any one of claims 1 to 3, characterized in that The specific parameters of the DC sputtering method include: The DC voltage is 300-2000V, the sputtering current is 0.01-1A, the pressure of the sputtering gas is 0.1-10Pa, and the volume proportion of oxygen in the sputtering gas is less than 5%.

5. The preparation method according to any one of claims 1 to 4, characterized in that: The thickness of the oxygen-rich transparent conductive seed layer is 4-12 nm.

6. The preparation method according to any one of claims 1 to 5, characterized in that: The thickness ratio of the oxygen-rich transparent conductive seed layer to the transparent conductive thickening layer is 1:(10-25).

7. The preparation method according to any one of claims 1 to 6, characterized in that: The oxygen-rich transparent conductive seed layer and the transparent conductive thickening layer are made of the same material; Preferably, the materials of the oxygen-rich transparent conductive seed layer and the transparent conductive thickening layer are both transparent conductive metal oxides; Preferably, the transparent conductive metal oxide includes any one of ITO, IZO or IGO.

8. Application of the preparation method according to any one of claims 1 to 7 in perovskite solar cells.

9. The use according to claim 8, characterized in that: The perovskite solar cell comprises a conductive substrate, a first carrier transport layer, a perovskite absorption layer, a second carrier transport layer, a transparent conductive layer prepared by the preparation method according to any one of claims 1 to 7, and a metal electrode which are stacked in sequence.

10. The use according to claim 9, characterized in that: The thickness of the transparent conductive layer is 50-400 nm.

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