Method for measuring performance of multi-stage semiconductor cooler

Abstract

The invention provides a method for measuring the performance of a multi-stage semiconductor cooler. The method comprises the following steps: determining a calculation equation of the performance of the multi-stage semiconductor cooler; when the geometrical parameters of the multistage TEC and the material characteristic parameters of the used gradient bismuth telluride are known, the electric performance parameters of the multistage semiconductor cooler are obtained through the equation; and when the electrical performance parameters of the multistage TEC are known, the geometric parameters of the multistage semiconductor cooler and the material characteristic parameters of the used gradient bismuth telluride are obtained through reverse inference by using the equation. The method has the beneficial effects that according to the calculated electrical performance parameters of the multistage TEC, an optimized multistage TEC use scheme for the load needing temperature control can be formed; the most appropriate bismuth telluride material is selected through guidance of a calculation result, so that the purposes of effectively reducing the material cost and meeting the high-standard temperature control requirement are achieved; a rapid design method is provided, through simulation calculation and a cyclic exhaustion method, a design scheme meeting performance requirements can be found in a short time, and trial and error time and cost in traditional design are reduced.

Description

Technical Field

[0001] The invention belongs to the technical field of heat transfer analysis of temperature control systems, and in particular relates to a method for measuring the performance of a multi-stage semiconductor refrigerator. Background Art

[0002] When current passes through a loop composed of different conductors, in addition to generating irreversible Joule heat, heat absorption and heat release will also occur at the joints of different conductors. This phenomenon is a type of thermoelectric effect, called the Peltier effect. Thermoelectric Cooler (TEC) is a device that uses the Peltier effect of semiconductors for cooling. It has the advantages of no noise, no vibration, small size, light weight, high reliability, large cooling capacity, and precise temperature control.

[0003] The main body of TEC is composed of a ceramic substrate (usually aluminum nitride), a guide plate (usually copper) and thermoelectric particles (usually bismuth telluride). The guide plate is electroplated on the ceramic substrate, and the thermoelectric particles are welded to form a current path; the thermoelectric particles are divided into P-type and N-type according to the difference in the proportion of each component, so under the applied voltage, the Peltier effect occurs between the two particles, and heat is released at one end of the device and absorbed at the other end to achieve cooling. For bismuth telluride-based thermoelectric particles, the maximum cooling temperature difference of a single-stage TEC can reach about 70K. As the cooling temperature difference increases, the cooling efficiency decreases rapidly and the performance decreases. Multi-stage TEC is composed of a single-stage TEC cascade stack, and each cold end is in contact with the hot end of the next stage, so as to increase the cooling temperature difference and improve the performance of the device. The application scenario of the multi-stage TEC design program is to design an unknown multi-stage TEC for a given performance requirement, or to reversely infer the electrical performance parameters of the multi-stage TEC based on the multi-stage TEC geometric parameters required and the material properties of the gradient bismuth telluride used, eliminating the steps of making and measuring multi-stage TEC. Summary of the invention

[0004] In order to solve the above technical problems, the present invention provides a method for measuring the performance of a multi-stage semiconductor refrigerator, which is particularly suitable for calculating TEC geometric parameters and material characteristic parameters of the gradient bismuth telluride used under the premise of given TEC performance requirements.

[0005] The technical solution adopted by the present invention is: in the first aspect, a method for measuring the performance of a multi-stage semiconductor refrigerator is provided, comprising:

[0006] The calculation equations for determining the performance of multi-stage semiconductor refrigerators are:

[0007]

[0008] V=IR+α pn (T h -T c ) (2)

[0009]

[0010]

[0011]

[0012] Among them, COP is the cooling efficiency of the multi-stage semiconductor refrigerator, T h is the hot end temperature of the multi-stage semiconductor cooler, T c is the cold end temperature of the multi-stage semiconductor refrigerator, Q c is the heat load of the multi-stage semiconductor cooler, V is the operating voltage of the multi-stage semiconductor cooler, T cw is the maximum cold end temperature of the multi-stage semiconductor cooler, P in is the maximum input power of the multi-stage semiconductor refrigerator, I is the current passing through the multi-stage semiconductor refrigerator, K is the sum of the thermal conductance of a single pair of N-type and P-type elements of a single-stage semiconductor refrigerator at the rated operating temperature, R is the sum of the resistance of a single pair of N-type and P-type elements of a single-stage semiconductor refrigerator at the rated operating temperature, a pn Q is the sum of the absolute values ​​of the Seebeck coefficients of a single pair of N-type and P-type elements of a single-stage semiconductor refrigerator at rated operating temperature. i,h and Q i,c are the heating power of the hot end and the cooling power of the cold end of the i-th stage, N i is the number of PN pairs at level i, a i is the sum of the absolute values ​​of the Seebeck coefficients of a single pair of N-type and P-type components at the rated operating temperature of the i-th level, that is, a i =|a P |+|a N |, T i is the temperature of the hot-end ceramic substrate of the i-th level and also the temperature of the cold-end ceramic substrate of the i+1-th level, K i is the sum of the thermal conductivities of a single pair of N-type and P-type components at the rated operating temperature at level i, R i It is the sum of the resistance of a single pair of N-type and P-type components at the rated operating temperature of the i-th level, λi=λ(T m,i ) is the rated operating temperature T m Thermal conductivity of a single pair of N-type and P-type components under i =ρ(T m,i ) is the rated operating temperature T m The resistivity of a single pair of N-type and P-type components under i and S i are the height and cross-sectional area of ​​a thermoelectric element, respectively;

[0013] When the geometric parameters of the multi-stage semiconductor refrigerator and the material characteristic parameters of the gradient bismuth telluride used are known, the electrical performance parameters of the multi-stage semiconductor refrigerator are obtained by using equations (1)-(9);

[0014] When the electrical performance parameters of the multi-stage semiconductor refrigerator are known, the geometric parameters of the multi-stage semiconductor refrigerator and the material characteristic parameters of the gradient bismuth telluride used can be inversely deduced using equations (1)-(9).

[0015] Furthermore, the value range of the current I in the calculation equation is determined by the working point. The current I is set to start from 0 and gradually increase. The voltage is calculated by the calculation equation until the voltage reaches the working voltage, and then the working point is found.

[0016] Furthermore, the operating point needs to comply with the input power less than the maximum input power P in and the cold end temperature is less than the maximum cold end temperature T cw .

[0017] In a second aspect, an electronic device is provided, comprising: at least one processor; and a memory communicatively connected to the at least one processor; wherein the memory stores instructions executable by the at least one processor, and the instructions are executed by the at least one processor so that the at least one processor can execute the method for measuring the performance of a multi-stage semiconductor refrigerator provided in the present disclosure.

[0018] In a third aspect, a non-transitory computer-readable storage medium storing computer instructions is provided, wherein the computer instructions are used to enable a computer to execute the method for measuring the performance of a multi-stage semiconductor refrigerator provided in the present disclosure.

[0019] In a fourth aspect, a computer program product is provided, comprising a computer program / instruction, which, when executed by a processor, implements the method for measuring the performance of a multi-stage semiconductor refrigerator provided in the present disclosure.

[0020] The advantages and positive effects of the present invention are as follows: due to the adoption of the above technical solution, a multi-stage TEC usage solution optimized for loads requiring temperature control can be formed according to the calculated electrical performance parameters of the multi-stage TEC, achieving the goals of low cost, sufficient temperature control capability and high reliability; the most suitable bismuth telluride material is selected to effectively reduce material costs and meet high-standard temperature control requirements through the calculation results; a fast design method is provided, which can find a design solution that meets performance requirements in a relatively short time through simulation calculation and cyclic exhaustive method, reducing the trial and error time and cost in traditional design methods; through detailed control equations and optimization algorithms, it is ensured that the designed multi-stage TEC can achieve the expected performance indicators in actual operation, thereby improving the accuracy and reliability of the design. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 Schematic diagram of a measurement method according to an embodiment of the present invention

[0022] Figure 2 This is a structural diagram of a two-stage semiconductor refrigerator according to an embodiment of the present invention. DETAILED DESCRIPTION

[0023] The present disclosure is described more fully below with reference to the accompanying drawings, in which exemplary embodiments of the present disclosure are described. The technical solutions in the embodiments of the present disclosure will be clearly and completely described below in conjunction with the drawings in the embodiments of the present disclosure. Obviously, the described embodiments are only part of the embodiments of the present disclosure, not all of the embodiments. Based on the embodiments in the present disclosure, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present disclosure.

[0024] like Figure 1-2 As shown, the present invention provides a method for measuring the performance of a multi-stage semiconductor refrigerator, comprising:

[0025] S100, calculation equation for determining the performance of a multi-stage semiconductor refrigerator,

[0026]

[0027] For a single-stage TEC with N PN pairs, the control equation is the same as that for a single PN pair, where K, R, and a are pn is the corresponding material parameter of N pairs and PN pairs, which is related to temperature, size of thermoelectric particles and access method. Equation (1) can be used to obtain the fixed hot end temperature T h With heat load Q c .

[0028] V=IR+α pn (T h -T c ) (2)

[0029]

[0030] Taking the current I as the independent variable, the extreme point can be simply found in equation (1) by taking the derivative. Then, the explicit expressions between the performance indicators and material parameters such as the maximum cooling temperature difference, maximum temperature difference current, maximum cooling power, maximum temperature difference voltage and cooling efficiency of the single-stage TEC can be obtained through equations (1) to (3), thus completing the design of the single-stage TEC.

[0031]

[0032] The level where the n-level TEC cold end 401 is located is the first level, the level where the hot end 402 is located is the n-th level, and the rest of the levels are arranged in sequence. For each level, the material qualitative temperature is taken as the average temperature of the hot end 402 and the cold end 401 of the level. The hot end of the i-th level and the cold end of the i+1-th level are in contact and share the same ceramic substrate 403.

[0033]

[0034] Q i,h =Q i+1,c =Q i (6)

[0035]

[0036] Note the cold end temperature T of the multi-stage TEC c =T0, cold end heat absorption (multi-stage TEC heat load) Q c =Q0; hot end temperature T h =T n , the heat released by the hot end is Q h =Q n .

[0037]

[0038] Among them, COP is the cooling efficiency of the multi-stage semiconductor refrigerator, T h is the hot end temperature of the multi-stage semiconductor cooler, T c is the cold end temperature of the multi-stage semiconductor refrigerator, Q c is the heat load of the multi-stage semiconductor cooler, V is the operating voltage of the multi-stage semiconductor cooler, T cw is the maximum cold end temperature of the multi-stage semiconductor cooler, P in is the maximum input power of the multi-stage semiconductor refrigerator, I is the current passing through the multi-stage semiconductor refrigerator, K is the sum of the thermal conductance of a single pair of N-type and P-type elements of a single-stage semiconductor refrigerator at the rated operating temperature, R is the sum of the resistance of a single pair of N-type and P-type elements of a single-stage semiconductor refrigerator at the rated operating temperature, a pn Q is the sum of the absolute values ​​of the Seebeck coefficients of a single pair of N-type and P-type elements of a single-stage semiconductor refrigerator at rated operating temperature. i,h and Q i,c are the heating power of the hot end and the cooling power of the cold end of the i-th stage, N i is the number of PN pairs at level i, a i is the sum of the absolute values ​​of the Seebeck coefficients of a single pair of N-type and P-type components at the rated operating temperature of the i-th level, that is, a i =|a P |+|a N |, T iis the temperature of the hot-end ceramic substrate of the i-th level and also the temperature of the cold-end ceramic substrate of the i+1-th level, K i is the sum of the thermal conductivities of a single pair of N-type and P-type components at the rated operating temperature at level i, R i It is the sum of the resistance of a single pair of N-type and P-type components at the rated operating temperature of the i-th level, λi=λ(T m,i ) is the rated operating temperature T m Thermal conductivity of a single pair of N-type and P-type components under i =ρ(T m,i ) is the rated operating temperature T m The resistivity of a single pair of N-type and P-type components under i and S i are the height and cross-sectional area of ​​a thermoelectric element, respectively;

[0039] S200, when the geometric parameters of the multi-stage semiconductor refrigerator and the material characteristic parameters of the gradient bismuth telluride used are known, the electrical performance parameters of the multi-stage semiconductor refrigerator are obtained by using equations (1)-(9);

[0040] S300, when the electrical performance parameters of the multi-stage semiconductor refrigerator are known, the geometric parameters of the multi-stage semiconductor refrigerator and the material characteristic parameters of the gradient bismuth telluride used are obtained by reverse calculation using equations (1)-(9).

[0041] In one embodiment, the value range of the current I in the calculation equation is determined by the operating point. The current I is set to start from 0 and gradually increase. The voltage is calculated by the calculation equation until the voltage reaches the operating voltage, and then the operating point is found.

[0042] By conducting experiments on different multi-stage TECs and outputting performance curves through the calibration program, the properties of other variables can be summarized when the current is within a suitable range. When the current changes within a suitable range, the voltage increases monotonically with the current; the cooling temperature difference increases first and then decreases with the current, reaching a maximum value; the cooling power increases first and then decreases with the current, reaching a maximum value; and the heat load decreases monotonically with the cooling temperature difference. According to the law that the voltage increases monotonically with the current, let the current I start from 0 and gradually increase, calculate the voltage until the voltage reaches the working voltage and stop, that is, the working point is found.

[0043] In one embodiment, the operating point needs to comply with the input power being less than the maximum input power P in and the cold end temperature is less than the maximum cold end temperature T cw .

[0044] Based on the embodiments of the present disclosure, the present disclosure also provides an electronic device, a readable storage medium and a computer program product.

[0045] An electronic device includes at least one processor; and a memory connected to the at least one processor in communication; wherein the memory stores instructions that can be executed by the at least one processor, and the instructions are executed by the at least one processor so that the at least one processor can execute the method for measuring the performance of a multi-stage semiconductor refrigerator provided by the present disclosure.

[0046] Electronic devices are intended to represent various forms of digital computers, such as laptop computers, desktop computers, workstations, personal digital assistants, servers, blade servers, mainframes, and other suitable computers. Electronic devices may also represent various forms of mobile devices, such as personal digital processing, cellular phones, smart phones, wearable devices, and other similar computing devices. The components shown herein, their connections and relationships, and their functions are merely examples and are not intended to limit the implementation of the present disclosure described and / or claimed herein.

[0047] A non-transitory computer-readable storage medium storing computer instructions, wherein the computer instructions are used to enable a computer to execute the method for measuring the performance of a multi-stage semiconductor refrigerator provided by the present disclosure.

[0048] Various embodiments of the present disclosure may be implemented in digital electronic circuit systems, integrated circuit systems, field programmable gate arrays (FPGAs), application specific integrated circuits (ASICs), application specific standard products (ASSPs), systems on chips (SOCs), complex programmable logic devices (CPLDs), computer hardware, firmware, software, and / or combinations thereof. These various embodiments may include: being implemented in one or more computer programs that can be executed and / or interpreted on a programmable system including at least one programmable processor, which may be a dedicated or general programmable processor that can receive data and instructions from a storage system, at least one input device, and at least one output device, and transmit data and instructions to the storage system, the at least one input device, and the at least one output device.

[0049] A computer program product includes a computer program / instruction. When the computer program / instruction is executed by a processor, the method for measuring the performance of a multi-stage semiconductor refrigerator provided in the present disclosure is implemented.

[0050] The program code for implementing the method of the present disclosure may be written in any combination of one or more programming languages. These program codes may be provided to a processor or controller of a general-purpose computer, a special-purpose computer, or other programmable data processing device, so that the program code, when executed by the processor or controller, implements the functions / operations specified in the flow chart and / or block diagram. The program code may be executed entirely on the machine, partially on the machine, partially on the machine and partially on a remote machine as a stand-alone software package, or entirely on a remote machine or server.

[0051] In the context of the present disclosure, a machine-readable medium may be a tangible medium that may contain or store a program for use by or in conjunction with an instruction execution system, device, or equipment. A machine-readable medium may be a machine-readable signal medium or a machine-readable storage medium. A machine-readable medium may include, but is not limited to, an electronic, magnetic, optical, electromagnetic, infrared, or semiconductor system, device, or equipment, or any suitable combination of the foregoing. A more specific example of a machine-readable storage medium may include an electrical connection based on one or more lines, a portable computer disk, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a portable compact disk read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the foregoing.

[0052] The embodiments of the present invention are described in detail above, but the contents described are only preferred embodiments of the present invention and cannot be considered to limit the scope of implementation of the present invention. All equivalent changes and improvements made within the scope of the present invention should still fall within the scope of the patent coverage of the present invention.

Claims

1. A method for measuring the performance of a multi-stage semiconductor refrigerator, characterized in that: include: The calculation equations for determining the performance of multi-stage semiconductor refrigerators are: V=IR+α pn (T h -T c ) (2) Q i，h =Q i+1，c =Q i (6) Among them, COP is the cooling efficiency of the multi-stage semiconductor refrigerator, T h is the hot end temperature of the multi-stage semiconductor cooler, T c is the cold end temperature of the multi-stage semiconductor refrigerator, Q c is the heat load of the multi-stage semiconductor cooler, V is the operating voltage of the multi-stage semiconductor cooler, T cw is the maximum cold end temperature of the multi-stage semiconductor cooler, P in is the maximum input power of the multi-stage semiconductor refrigerator, I is the current passing through the multi-stage semiconductor refrigerator, K is the sum of the thermal conductance of a single pair of N-type and P-type elements of a single-stage semiconductor refrigerator at the rated operating temperature, R is the sum of the resistance of a single pair of N-type and P-type elements of a single-stage semiconductor refrigerator at the rated operating temperature, a pn Q is the sum of the absolute values ​​of the Seebeck coefficients of a single pair of N-type and P-type elements of a single-stage semiconductor refrigerator at rated operating temperature. i,h and Q i,c are the heating power of the hot end and the cooling power of the cold end of the i-th stage, N i is the number of PN pairs at level i, a i is the sum of the absolute values ​​of the Seebeck coefficients of a single pair of N-type and P-type components at the rated operating temperature of the i-th level, that is, a i =|a P |+|a N |, T i is the temperature of the hot-end ceramic substrate of the i-th level and also the temperature of the cold-end ceramic substrate of the i+1-th level, K i is the sum of the thermal conductivities of a single pair of N-type and P-type components at the rated operating temperature at level i, R i It is the sum of the resistance of a single pair of N-type and P-type components at the rated operating temperature of the i-th level, λi=λ(T m,i ) is the rated operating temperature T m Thermal conductivity of a single pair of N-type and P-type components under i =ρ(T m,i ) is the rated operating temperature T m The resistivity of a single pair of N-type and P-type components under i and S i are the height and cross-sectional area of ​​a thermoelectric element, respectively; When the geometric parameters of the multi-stage semiconductor refrigerator and the material characteristic parameters of the gradient bismuth telluride used are known, the electrical performance parameters of the multi-stage semiconductor refrigerator are obtained by using equations (1)-(9); When the electrical performance parameters of the multi-stage semiconductor refrigerator are known, the geometric parameters of the multi-stage semiconductor refrigerator and the material characteristic parameters of the gradient bismuth telluride used can be inversely deduced using equations (1)-(9).

2. The measuring method according to claim 1, characterized in that: The value range of the current I in the calculation equation is determined by the operating point. The current I is set to start from 0 and gradually increase. The voltage is calculated by the calculation equation until the voltage reaches the operating voltage, and then the operating point is found.

3. The measuring method according to claim 2, characterized in that: The operating point needs to comply with the input power less than the maximum input power P in and the cold end temperature is less than the maximum cold end temperature T cw .

4. An electronic device comprising: at least one processor; as well as a memory communicatively connected to at least one processor; wherein, The memory stores instructions that can be executed by at least one processor. The instructions are executed by at least one processor so that the at least one processor can execute the method according to any one of claims 1 to 3.

5. A non-transitory computer-readable storage medium storing computer instructions, wherein: The computer instructions are used to make a computer execute the method according to any one of claims 1 to 3.

6. A computer program product comprising a computer program / instructions, which, when executed by a processor, implement the steps of the method according to any one of claims 1 to 3.

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