Response speed testing device and method of marine natural potential sensor

Abstract

The invention relates to the technical field of marine science, and provides a response speed testing device and method for a marine natural potential sensor, and the device comprises a box body which is located at the top of an installation space; the potential switching module is positioned below the ocean natural potential sensor; the voltage measurement module is connected with the marine natural potential sensor, and the voltage measurement module is used for collecting potential transition signals of the marine natural potential sensor and outputting response parameters of the marine natural potential sensor; the potential switching module comprises a power supply unit, a conductor array and a charge processing unit. The conductor array is adopted as a response source, and the reliability of response speed measurement of the marine natural potential sensor is effectively improved. The boron-doped diamond film with low background current and low adsorption is adopted, so that smaller capacitance and charge quantity are obtained, and the influence of charging and discharging on the potential change and the response speed measurement of the potential sensor is reduced.

Description

Technical Field

[0001] The invention relates to the technical field of marine science, and in particular to a response speed testing device and method for a marine spontaneous potential sensor. Background Art

[0002] As a common physical phenomenon in the ocean, natural potential is widely used in the fields of geology and marine science, and is used to study marine geological structures, seabed mineral resources and other fields. Marine natural potential sensors are widely used in the geological exploration industry. However, during the exploration process, due to the complex geological conditions in the natural environment, the uneven distribution of materials in the same horizontal direction, and the different sizes of natural potentials generated by different materials, it is necessary to quickly analyze the composition of the material. This requires the natural potential sensor to have a high response speed, be able to quickly collect and analyze the potentials of different materials, and judge the composition of the material according to the different potential sizes.

[0003] However, the response speed test of the potential sensor requires a relatively strict test environment and test conditions; the test effect of the existing potential sensor is poor; therefore, it is necessary to design a response speed test device and method for a marine natural potential sensor to solve the above problems. Summary of the invention

[0004] The present invention provides a response speed test device and method for an ocean natural potential sensor, which solves the technical problems that there are many influencing factors in the test environment of the existing potential sensor and the potential of the test point is difficult to obtain.

[0005] In order to achieve the purpose of solving the above technical problems, the present invention adopts the following technical solutions: A response speed testing device for an ocean spontaneous potential sensor, comprising: A box body, in which an installation space is formed, and the ocean natural potential sensor is located at the top of the installation space; A potential switching module, which is located below the ocean natural potential sensor; the potential switching module is used to provide standard potential change data; A voltage measurement module connected to the ocean natural potential sensor, the voltage measurement module is used to collect the potential transition signal of the ocean natural potential sensor and output the response parameter of the ocean natural potential sensor; The potential switching module includes: a power supply unit, a conductor array and a charge processing unit; the power supply unit is connected to the conductor array through a potential conversion switch; the conductor array is used to generate potential transition changes; the charge processing unit is connected to the conductor array and is used to process the accumulation of charges on the conductor surface after the step is generated.

[0006] In some embodiments of the present invention, the conductor array is made of boron-doped diamond film, the array monomer has a diameter of 0.025-0.05 mm, a height of 0.5-3 μm, a spacing of 0.05-2 mm, and a cone angle of the nanostructure of 0-20°.

[0007] In some embodiments of the present invention, the boron doping concentration in the boron doped diamond film ranges from 10000 to 30000 ppm, and the thickness of the boron doped diamond film ranges from 0.8 to 3 μm; the surface of the boron doped diamond film is treated with a 1:2-1:3.5 sulfuric acid-nitric acid mixed solution to remove impurities.

[0008] In some embodiments of the present invention, the charge processing unit includes a charge rapid transfer unit, a voltage amplification and triggering unit, and a rapid discharge unit; the charge rapid transfer unit includes a resistor and a capacitor connected in series; the voltage amplification and triggering unit uses a high-frequency transformer and an avalanche diode; and the rapid discharge unit uses a gallium nitride field effect transistor.

[0009] In some embodiments of the present invention, the capacitor in the charge rapid transfer unit adopts a plurality of low-inductance ceramic capacitors connected in parallel; one end of the low-inductance ceramic capacitor is connected to a conductor, and the other end is connected to the inductor and then to the ground, and each low-inductance ceramic capacitor is connected in parallel with a voltage-equalizing resistor; the primary winding of the high-frequency transformer is connected to the common end of the low-inductance ceramic capacitor, the secondary winding is connected to the anode of the avalanche diode, and the cathode of the diode is connected to the energy storage resistor and then to the ground; the gate of the gallium nitride field effect transistor is connected to the energy storage capacitor, the source is grounded, the drain is connected to the discharge resistor and then connected to the common end of the low-inductance capacitor, and a voltage-stabilizing diode is connected between the gate and the source.

[0010] In some embodiments of the present invention, the power supply unit includes an excitation power supply and a power supply filter unit, and the power supply filter unit is used to remove low-frequency AC noise.

[0011] In some embodiments of the present invention, the voltage measurement module includes a voltage continuous measurement unit and a potential filtering unit, wherein the voltage continuous measurement unit includes a high-speed comparator, a digital potentiometer and a multiplexer; the voltage continuous measurement unit includes a serial measurement mode and a parallel measurement mode.

[0012] In some embodiments of the present invention, in the series measurement mode, the voltage continuity module includes a high-speed comparator, a digital potentiometer, and a multiplexer; In the parallel measurement mode, the voltage continuity module includes a plurality of high-speed comparators and a plurality of digital potentiometers.

[0013] In some embodiments of the present invention, the potential filtering unit includes hardware filtering and software filtering. The hardware filtering processes the signal through an RC high-pass passive filtering circuit and an active notch filter. The software filtering includes adaptive algorithm filtering and fast tracking filtering.

[0014] In some embodiments of the present invention, a method for testing the response speed of an ocean spontaneous potential sensor is provided, which specifically comprises the following steps: S1: Place the natural potential sensor on the top of the box space through a fixed bracket, keep a certain distance from the metal electrode, and ensure that the electrode is placed horizontally above the conductor array; S2: Measure the potential of the conductor array when no voltage is applied, and when the voltage fluctuates within the range of ±0.1mv, record the initial potential of the natural potential sensor; S3: Set the excitation voltage to a fixed value, close the potential conversion switch, power on the conductor array, start measuring, and when the voltage fluctuates within the range of ±0.1mv, close the potential conversion switch to achieve a step change in the potential of the metal conductor; and store the collected voltage signal in the storage module; S4: Utilize the collected voltage signal to obtain the response parameters of the natural potential sensor.

[0015] The technical solution of the present invention has the following technical effects compared with the prior art: The present invention proposes a response speed testing device and method for an ocean spontaneous potential sensor, which adopts a conductor array as a response source and can effectively improve the reliability of the response speed measurement of the ocean spontaneous potential sensor.

[0016] In addition, a boron-doped diamond film with low background current and low adsorption is used as a potential generating electrode for charge storage to obtain a smaller capacitance and charge amount, thereby reducing the impact of charging and discharging on the potential change and the response speed measurement of the potential sensor. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other accompanying drawings can be obtained based on these accompanying drawings without paying creative work.

[0018] Figure 1 It is a structural principle diagram of a response speed testing device of an ocean spontaneous potential sensor shown in an embodiment of the present invention.

[0019] Figure 2 The structure of a response speed test device of an ocean spontaneous potential sensor shown in an embodiment of the present invention is schematically shown. Figure 1 .

[0020] Figure 3 The structure of a response speed test device of an ocean spontaneous potential sensor shown in an embodiment of the present invention is schematically shown. Figure 2 .

[0021] Figure 4 It is a schematic diagram of voltage transition shown in an embodiment of the present invention.

[0022] Figure numerals: 100, housing; 110, fixing bracket; 210, power supply unit; 220, power supply filter unit; 230, potential conversion switch; 240, conductor array; 250, charge processing unit; 310, voltage continuous measurement unit; 320, potential filter unit; 400, natural potential sensor. DETAILED DESCRIPTION

[0023] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0024] In the description of the present application, it should be understood that the terms "center", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0025] The terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of this application, unless otherwise specified, "plurality" means two or more.

[0026] In the description of this application, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0027] In the present invention, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may include that the first and second features are in direct contact, or may include that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, a first feature being "above", "above" and "above" a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is higher in level than the second feature. A first feature being "below", "below" and "below" a second feature includes that the first feature is directly below and obliquely below the second feature, or simply indicates that the first feature is lower in level than the second feature.

[0028] The disclosure below provides many different embodiments or examples to realize different structures of the present invention. In order to simplify the disclosure of the present invention, the parts and settings of specific examples are described below. Of course, they are only examples, and the purpose is not to limit the present invention. In addition, the present invention can repeat reference numbers and / or reference letters in different examples, and this repetition is for the purpose of simplicity and clarity, which itself does not indicate the relationship between the various embodiments and / or settings discussed. In addition, the present invention provides various specific examples of processes and materials, but those of ordinary skill in the art can be aware of the application of other processes and / or the use of other materials.

[0029] Example 1, reference Figure 1-Figure 3 As shown, a response speed testing device of an ocean spontaneous potential sensor 400 includes: The box 100 has an installation space formed therein, and the ocean natural potential sensor 400 is located at the top of the installation space; A potential switching module, which is located below the ocean natural potential sensor 400; the potential switching module is used to provide standard potential change data; A voltage measurement module, which is connected to the ocean natural potential sensor 400, and is used to collect the potential transition signal of the ocean natural potential sensor 400 and output the response parameters of the ocean natural potential sensor 400; The potential switching module includes: a power supply unit 210, a conductor array 240 and a charge processing unit 250; the power supply unit 210 is connected to the conductor array 240 through a potential conversion switch 230; the conductor array 240 is used to generate a potential transition change; the charge processing unit 250 is connected to the conductor array 240 and is used to process the accumulation of charges on the conductor surface after the step is generated.

[0030] The measurement principle of the natural potential sensor 400 is that when there are charged objects around the natural potential sensor 400, due to the uneven distribution of the charge of the charged body, charge accumulation will occur on the surface of the conductor, and this accumulation will generate an electrostatic field. Due to the existence of the electrostatic field, the natural potential sensor 400 can sense the corresponding potential of the electrostatic field.

[0031] The response time of the natural potential sensor 400 refers to the time required for the voltage difference at the measuring end of the natural potential sensor 400 to jump from the starting voltage to 63.2% of the step value when the current flowing through the surface of the measured conductor jumps from one potential to another. The potential difference response time is represented by T.

[0032] Accurately measuring the response speed of the natural potential sensor 400 requires ensuring that the surface charge of the metal conductor is stable; secondly, ensuring that the surface charge of the conductor is quickly discharged after the switch is disconnected. Then, ensuring the sensitivity of the potential conversion switch 230, the switch closing and opening time should be small. Finally, the shielding box ensures shielding of external electromagnetic interference to reduce the error of the response time.

[0033] The box 100 structure used in this embodiment forms an installation space inside, and the conductor array 240 and the natural potential sensor 400 are both located in the installation space. The box 100 can effectively shield external electromagnetic interference and avoid the influence of external electromagnetic interference on the response time.

[0034] A fixing bracket 110 is disposed in the box 100 , and the natural potential sensor 400 is disposed directly above the conductor array 240 through the fixing bracket 110 , so that the natural potential sensor 400 is at a constant potential inside the electric field generated by the conductor array 240 .

[0035] In some embodiments of the present invention, the fixing bracket 110 is provided with a groove, and the natural potential sensor 400 is fixed in the groove; the natural potential sensor 400 is separated from the conductor array 240 by a certain distance; Figure 2 and Figure 3 As shown, the natural potential sensor 400 is located at the top of the box 100 , and the conductor array 240 is located at the bottom of the box 100 .

[0036] In some embodiments of the present invention, a knob is provided on the outside of the box 100, and the knob serves as the potential conversion switch 230. The knob is used to connect the power supply and the conductor array 240. The conductor array 240 is powered on by rotating the knob, so that the conductor array 240 produces a potential change.

[0037] In some embodiments of the present invention, the test of the response speed of the natural potential sensor 400 requires accurate acquisition of the amplitude and change speed of the potential change of the test environment and the test point.

[0038] The relationship between the voltage and current of a capacitor can be described by the definition of capacitance: C = dQ / dV, where C is the capacitance value, dQ is the small change in charge, and dV is the small change in voltage. This formula shows that a change in potential will inevitably lead to a change in charge, that is, there is a charging or discharging current; by differentially transforming the formula, the relationship between current (I) and voltage (V) and time (t) can be obtained: I = C * dV / dt, and the speed of voltage change is essentially not an instantaneous value that can be ignored. Under the same current change, smaller capacitance and charge will lead to a higher voltage change rate; it can also be understood that smaller capacitance and charge will help reduce the impact of the amount of time caused by voltage changes. Therefore, in the embodiment, a boron-doped diamond film with low background current and low adsorption is used as a potential generating electrode for charge storage to obtain a smaller capacitance and charge, and reduce the impact of charging and discharging on the potential change and the response speed measurement of the potential sensor.

[0039] In some embodiments of the present invention, the array monomers of the conductor array 240 have a diameter of 0.025-0.05 mm, a height of 0.5-3 μm, a spacing of 0.05-2 mm, and a cone angle of the nanostructure of 0-20°.

[0040] In some embodiments of the present invention, the boron-doped diamond film is obtained by doping, modifying and purifying the diamond film. The specific processing process is as follows: The metal substrate in the form of a microstructure array is prepared by laser processing using complete niobium metal. The laser power is 200 Å. The processed array monomer has a diameter of 0.025-0.05 mm, a height of 0.5-3 μm, a spacing of 0.05-2 mm, and a cone angle of the nanostructure of 0-20 degrees. After the electrode substrate is processed, it is filled with a silicon oxide coating. After complete filling, a mechanical grinding method is used to make the surface flat and expose the metal substrate. A chemical vapor deposition technology method is used to grow boron-doped diamond on the surface of the metal substrate in the form of an array. The boron doping concentration is 10000-30000 ppm and the thickness is 0.8-3 μm. The surface is treated with a 1:2-1:3.5 sulfuric acid-nitric acid mixed solution for impurity removal. The solution temperature is 230-260°C and the processing time is 30 minutes to increase the charge injection and release rate of the electrode surface.

[0041] In some embodiments of the present invention, the array monomer used in the conductor array 240 has a diameter of 0.025-0.05mm, a height of 0.5-3μm, a spacing of 0.05-2mm, and a cone angle of the nanostructure of 0-20°; as a small-volume array structure, it helps to form a physical form of multiple quasi-point charge arrays in parallel, and through the potential distribution of the point charge position in space: V = k * (q / r), the initial value of the potential of the multiple charge arrays at the measured position of the potential sensor can be obtained, and its change time can be deducted as the background error, which can effectively improve the reliability of the response speed measurement of the ocean natural potential sensor 400.

[0042] In some embodiments of the present invention, continue to refer to Figure 1 As shown, the power supply unit 210 adopts a constant voltage positive excitation source, which provides a stable potential signal to the conductor array 240 after being connected to the power supply filter unit 220; the power supply filter unit 220 is used to optimize the constant voltage excitation source voltage signal and remove low-frequency AC noise.

[0043] In some embodiments of the present invention, the charge processing unit 250 includes a charge fast transfer unit, a voltage amplification and triggering unit, and a fast discharge unit; the charge fast transfer unit includes a resistor and a capacitor connected in series; and the fast discharge unit uses a gallium nitride field effect transistor.

[0044] In some embodiments of the present invention, a plurality of low-inductance ceramic capacitors connected in parallel are used for the rapid charge transfer unit; one end of the low-inductance ceramic capacitor is connected to a conductor, and the other end is connected to an inductor and then to ground, and a voltage-equalizing resistor is connected in parallel to each low-inductance ceramic capacitor.

[0045] Specifically, the charge rapid transfer unit is used to connect with the conductor array 240 to process the accumulation of charges on the conductor surface after the step is generated.

[0046] In some embodiments of the present invention, the voltage amplification and triggering unit includes a high-frequency transformer, an avalanche diode and an energy storage resistor; wherein the primary winding of the high-frequency transformer is connected to the common end of the low-inductance ceramic capacitor, the secondary winding is connected to the anode of the avalanche diode, and the cathode of the diode is connected to the energy storage resistor and then grounded. It is used to quickly meet the working threshold of the fast discharge module and accurately trigger the fast discharge.

[0047] In some embodiments of the present invention, the fast discharge unit is mainly composed of a GaN field effect transistor, wherein the gate of the GaN field effect transistor is connected to the energy storage capacitor, the source is grounded, the drain is connected to the discharge resistor and then connected to the common end of the low-inductance capacitor, and a voltage regulator diode is connected between the gate and the source, for fast discharge of charge.

[0048] After the charge processing unit 250 is powered off, the charges accumulated on the surface of the conductor are quickly released, thereby eliminating the electrostatic field generated by the conductor and reducing the impact on sensor measurement.

[0049] In some embodiments of the present invention, the voltage measurement module includes a voltage continuous measurement unit 310 and a potential filtering unit 320, wherein the voltage continuous measurement unit 310 includes a high-speed comparator, a digital potentiometer and a multiplexer; the voltage continuous measurement unit 310 includes a serial measurement mode and a parallel measurement mode.

[0050] In some embodiments of the present invention, in the series measurement mode, the voltage continuity module includes a high-speed comparator, a digital potentiometer, and a multiplexer; the multiplexer inputs the first output signal to the high-speed comparator, and the digital potentiometer controls the signal to be amplified or reduced according to the signal change, and transmits it to the subsequent circuit, and then switches to the next electrode through the multiplexer.

[0051] In the parallel measurement mode, the voltage continuity module includes multiple high-speed comparators and multiple digital potentiometers. Each electrode inputs its own potential signal into its own high-speed comparator, and according to the signal change, each digital potentiometer controls the signal to amplify or reduce it, and transmits it to the subsequent circuit.

[0052] In some embodiments of the present invention, the potential filtering unit 320 includes hardware filtering and software filtering. The hardware filtering processes the signal through an RC high-pass passive filtering circuit and an active notch filter. The software filtering includes adaptive algorithm filtering and fast tracking filtering.

[0053] Among them, the hardware filtering processes the signal through the RC high-pass passive filter circuit and the active notch filter to remove high-frequency noise and 50Hz power frequency noise.

[0054] Software filtering includes adaptive algorithm filtering and fast tracking filtering, which aims to remove and suppress interference signals, optimize signal quality, accurately capture step signals, and reduce signal distortion and delay.

[0055] The technical solution of the present invention has the following technical effects compared with the prior art: The present invention proposes a response speed testing device and method for an ocean spontaneous potential sensor 400 , which uses a conductor array 240 as a response source, and can effectively improve the reliability of the response speed measurement of the ocean spontaneous potential sensor 400 .

[0056] In addition, a boron-doped diamond film with low background current and low adsorption is used as a potential generating electrode for charge storage to obtain a smaller capacitance and charge amount, thereby reducing the impact of charging and discharging on the potential change and the response speed measurement of the potential sensor.

[0057] Embodiment 2 provides a method for testing the response speed of an ocean spontaneous potential sensor 400, which specifically includes the following steps: S1: Place the natural potential sensor 400 on the top of the installation space of the box 100 through the fixing bracket 110, so that it maintains a certain distance from the conductor array 240, and ensure that the natural potential sensor 400 is horizontally placed directly above the conductor array 240; S2: Set the excitation voltage to a fixed value, close the potential conversion switch 230, energize the conductor array 240, and start measuring; when the voltage fluctuates within the range of ±0.1mv, record the voltage as V0; refer to Figure 4 As shown, S3: close the potential conversion switch 230 to realize the step change of the potential of the metal conductor; start the measurement; when the voltage fluctuates within the range of ±0.1mv, record the voltage as V1; S4: Obtaining the response parameters of the spontaneous potential sensor 400 using the collected voltage signal.

[0058] Continue to refer to Figure 4 As shown, the voltage V2 in the figure is the voltage reaching 63.2% of the step value detected by the probe when the potential conversion switch 230 changes from the closed state to the open state; △V= V0- V2; △V is the change amount reaching 63.2% of the step value detected by the probe when the potential conversion switch 230 changes from the closed state to the open state.

[0059] Δt is the time required for the voltage to change ΔV, ie, the response time constant of the spontaneous potential sensor 400 .

[0060] The technical solution of the present invention has the following technical effects compared with the prior art: The present invention proposes a response speed testing device and method for an ocean spontaneous potential sensor 400 , which uses a conductor array 240 as a response source, and can effectively improve the reliability of the response speed measurement of the ocean spontaneous potential sensor 400 .

[0061] In addition, a boron-doped diamond film with low background current and low adsorption is used as a potential generating electrode for charge storage to obtain a smaller capacitance and charge amount, thereby reducing the impact of charging and discharging on the potential change and the response speed measurement of the potential sensor.

[0062] The above are only specific embodiments of the present invention, but the protection scope of the present invention is not limited thereto. Any changes or substitutions that can be easily thought of by a person skilled in the art within the technical scope disclosed by the present invention should be included in the protection scope of the present invention. Therefore, the protection scope of the present invention should be based on the protection scope of the claims.

Claims

1. A response speed test device for an ocean spontaneous potential sensor, characterized in that: The following steps are involved: A box body, wherein an installation space is formed therein, and the ocean natural potential sensor is located at the top of the installation space; A potential switching module is located below the ocean natural potential sensor; the potential switching module is used to provide standard potential change data; a voltage measurement module connected to the ocean natural potential sensor, the voltage measurement module being used to collect a potential transition signal of the ocean natural potential sensor and output a response parameter of the ocean natural potential sensor; The potential switching module includes: a power supply unit, a conductor array and a charge processing unit; the power supply unit is connected to the conductor array through a potential conversion switch; the conductor array is used to generate potential jump changes; the charge processing unit is connected to the conductor array and is used to process the accumulation of charge on the conductor surface after the step is generated.

2. The response speed test device of a marine spontaneous potential sensor according to claim 1, characterized in that: The conductor array adopts boron-doped diamond film, the array monomer has a diameter of 0.025-0.05 mm, a height of 0.5-3 μm, a spacing of 0.05-2 mm, and a cone angle of the nanostructure of 0-20 degrees.

3. The device and method for testing the response speed of an ocean spontaneous potential sensor according to claim 2, characterized in that: The boron doping concentration of the boron-doped diamond film is in the range of 10,000-30,000 ppm, and the thickness of the boron-doped diamond film is in the range of 0.8-3 μm. The surface of the boron-doped diamond film is treated with a sulfuric acid-nitric acid mixed solution with a ratio of 1:2-1:3.5 to remove impurities.

4. The response speed test device of the ocean spontaneous potential sensor according to claim 3, characterized in that: The charge processing unit includes a charge rapid transfer unit, a voltage amplification and triggering unit, and a rapid discharge unit; the charge rapid transfer unit includes a resistor and a capacitor connected in series; the voltage amplification and triggering unit uses a high-frequency transformer and an avalanche diode; and the rapid discharge unit uses a gallium nitride field-effect transistor.

5. The response speed testing device of a marine spontaneous potential sensor according to claim 1, characterized in that: The capacitors in the rapid charge transfer unit are multiple low-inductance ceramic capacitors connected in parallel; one end of the low-inductance ceramic capacitor is connected to a conductor, the other end is connected to an inductor, and then to ground, and each low-inductance ceramic capacitor is connected in parallel with a voltage-equalizing resistor; the primary winding of the high-frequency transformer is connected to the common end of the low-inductance ceramic capacitors, the secondary winding is connected to the anode of the avalanche diode, and the cathode of the diode is connected to the energy storage resistor and then to ground; the gate of the gallium nitride field-effect transistor is connected to the energy storage capacitor, the source is grounded, the drain is connected to a bleeder resistor and then to the common end of the low-inductance capacitor, and a voltage-stabilizing diode is connected between the gate and the source.

6. The response speed test device of a marine spontaneous potential sensor according to claim 1, characterized in that: The power supply unit includes an excitation power supply and a power supply filter unit, and the power supply filter unit is used to remove low-frequency AC noise.

7. The response speed test device of the ocean spontaneous potential sensor according to claim 6, characterized in that: The voltage measurement module includes a voltage continuous measurement unit and a potential filtering unit, wherein the voltage continuous measurement unit includes a high-speed comparator, a digital potentiometer and a multiplexer; the voltage continuous measurement unit includes a serial measurement mode and a parallel measurement mode.

8. The response speed testing device of a marine spontaneous potential sensor according to claim 1, characterized in that: In the series measurement mode, the voltage continuous module includes a high-speed comparator, a digital potentiometer, and a multiplexer; In the parallel measurement mode, the voltage continuity module includes multiple high-speed comparators and multiple digital potentiometers.

9. The response speed testing device of a marine spontaneous potential sensor according to claim 1, characterized in that: The potential filtering unit includes hardware filtering and software filtering. The hardware filtering processes the signal through an RC high-pass passive filtering circuit and an active notch filter. The software filtering includes adaptive algorithm filtering and fast tracking filtering.

10. The method for testing the response speed of an ocean spontaneous potential sensor according to claim 1, wherein: The specific steps include: S1: Place the natural potential sensor on the top of the box space through the fixing bracket, ensuring that it is placed horizontally above the conductor array; S2: Measure the potential of the conductor array when no voltage is applied. When the voltage fluctuation is within the range of ±0.1mV, record the initial potential of the natural potential sensor. S3: Set the excitation voltage to a fixed value, close the potential conversion switch, energize the conductor array, and start measurement. When the voltage fluctuation is within the range of ±0.1mV, close the potential conversion switch to achieve a step change in the metal conductor potential; and store the collected voltage signal in the storage module; S4: Utilize the collected voltage signal to obtain the response parameters of the natural potential sensor.

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