Bulk phase passivation perovskite solar cell and preparation method and application thereof

Abstract

The invention discloses a bulk phase passivation perovskite solar cell and a preparation method and application thereof, and belongs to the field of new energy. The perovskite solar cell comprises a conductive substrate, a hole transport layer, a dielectric layer, a perovskite light absorption layer, an electron transport layer and a top electrode layer which are stacked in sequence, materials of the perovskite light absorption layer comprise (FA < 0.95 > MA < 0.05 >) < 0.95 > Cs < 0.05 > Pb < (I < 0.95 > Br < 0.05 >) < 3 > and guanidyl chloride. According to the perovskite solar cell provided by the invention, a bulk phase passivation technology is adopted, guanidyl chloride is used as a passivator, defect recombination in a perovskite material can be reduced, collection and migration of charge carriers can be enhanced, and the overall performance of the cell, especially the photoelectric conversion efficiency, can be improved.

Description

Technical Field

[0001] The present invention relates to the field of new energy technology, and in particular to a bulk passivated perovskite solar cell and a preparation method and application thereof. Background Art

[0002] Since it was first proposed, perovskite solar cells have quickly become an important research direction in the field of solar cells due to their excellent photoelectric conversion efficiency, low cost, and easy preparation. Perovskite materials have excellent light absorption properties and high carrier mobility, which makes them far surpass other types of organic solar cells in photoelectric conversion efficiency. In recent years, the efficiency of perovskite solar cells has continued to increase and has approached the level of traditional silicon solar cells. This breakthrough makes perovskite solar cells an important candidate material that may replace silicon cells, especially in reducing production costs and improving production efficiency.

[0003] However, although the efficiency of perovskite solar cells has made significant progress in just over a decade, there are still some constraints, mainly reflected in the stability and efficiency improvement of the battery. In particular, the efficiency improvement of perovskite solar cells is affected by multiple factors, one of the important limiting factors is the low electron transfer efficiency between the functional layers in the battery. Specifically, there are often large electron transfer barriers at the interface between the perovskite material and other functional layers in the battery (such as electrodes, electron transport layers, and hole transport layers), which leads to the recombination of photogenerated carriers during migration. This recombination phenomenon greatly reduces the overall performance of the battery. The recombination of photogenerated carriers not only reduces the current output of the battery, but also affects the effective collection of photocurrent, thereby limiting the further improvement of battery efficiency. Therefore, how to improve the efficiency of perovskite solar cells is a hot research direction. Summary of the invention

[0004] The present invention aims to solve the problem of low cell efficiency in the prior art of preparing perovskite solar cells. The present invention provides a bulk passivated perovskite solar cell and a preparation method and application thereof.

[0005] In order to achieve the above object, the present invention provides the following technical solutions: The present invention provides a bulk passivated perovskite solar cell, comprising a conductive substrate, a hole transport layer, a dielectric layer, a perovskite light absorbing layer, an electron transport layer and a top electrode layer stacked in sequence; the material of the perovskite light absorbing layer comprises (FA 0.95 MA 0.05 ) 0.95 Cs 0.05 Pb(I 0.95 Br 0.05 )3 and guanidino chloride.

[0006] The concentration of the guanidine chloride is 0.3-0.5 mg / mL.

[0007] The material of the hole transport layer is one or more of MeO-2PACz, 2PACz, Me-4PACz or 4PACz.

[0008] The material of the dielectric layer is Al2O3 nanoparticles.

[0009] The material of the electron transport layer includes TiO2, SnO2 or one of fullerene and fullerene derivatives.

[0010] The material of the top electrode layer is one of gold, silver, copper, graphite or amorphous carbon.

[0011] The conductive substrate is made of indium tin oxide. The thickness of the conductive substrate is 200~400nm; the thickness of the hole transport layer is 1~5n nm; the thickness of the dielectric layer is 30~60nm; the thickness of the perovskite light absorption layer is 300~700nm; the thickness of the electron transport layer is 10~100nm; and the thickness of the top electrode layer is 50~500nm.

[0012] The present invention also provides a method for preparing a bulk passivated perovskite solar cell, comprising: Spin coating a solution including hole transport layer material on a conductive substrate, and annealing after spin coating to obtain a hole transport layer; Spin coating a solution including a dielectric layer material on the hole transport layer, and annealing after spin coating to obtain a dielectric layer; Spin coating on dielectric layer includes (FA 0.95 MA 0.05 ) 0.95 Cs 0.05 Pb(I 0.95 Br 0.05 )3 and guanidine chloride perovskite precursor solution, perform two-stage spin coating at different rotation speeds, add chlorobenzene to the perovskite precursor solution before the end of spin coating, and anneal after spin coating to obtain a perovskite light absorbing layer; The electron transport material and the top electrode material are sequentially deposited on the perovskite light-absorbing layer by vacuum evaporation to form an electron transport layer and a top electrode layer, respectively, to constitute a bulk passivated perovskite solar cell.

[0013] The present invention also provides a photovoltaic device, comprising the above-mentioned bulk passivated perovskite solar cell.

[0014] Compared with the prior art, the present invention has the following beneficial effects: The perovskite solar cell provided by the present invention adds guanidine chloride as a bulk passivator of the perovskite in the perovskite light-absorbing layer. Guanidine chloride can effectively passivate defect sites in the perovskite crystal, especially lattice defects and interface defects, which usually lead to recombination of carriers, thereby damaging the efficiency of the battery; through the passivation effect, the electron and hole recombination caused by the defects is reduced, which helps to improve the effective migration and collection efficiency of carriers, thereby improving the photoelectric conversion efficiency of the battery; the perovskite light-absorbing layer provided by the present invention and the other layer structures of the battery work together to improve the overall performance of the perovskite solar cell. The perovskite solar cell provided by the present invention adopts bulk passivation technology and uses guanidine chloride as a passivator, which helps to reduce defect recombination in the perovskite material, enhance the collection and migration of charge carriers, and improve the overall performance of the battery, especially in photoelectric conversion efficiency.

[0015] Furthermore, the concentration range of guanidine chloride is 0.3~0.5 mg / mL. Too high a concentration of guanidine chloride may cause excessive deposition of additives in the material, thereby affecting the light absorption characteristics of the perovskite or forming new interface problems, which in turn reduces efficiency. Too low a concentration of guanidine chloride may fail to fully passivate defects in the perovskite crystal, resulting in little effect and difficulty in significantly improving efficiency.

[0016] Furthermore, the provided hole transport layer material has excellent hole conductivity, can effectively transport photogenerated holes, reduce recombination losses, and improve battery performance.

[0017] Furthermore, the dielectric layer uses Al2O3 nanoparticles, which can effectively prevent the non-radiative recombination of electrons and holes and increase the open circuit voltage of the battery.

[0018] Furthermore, the provided electron transport material has good electronic conductivity and can effectively reduce the recombination of charge carriers, thereby helping to improve the electron transport efficiency.

[0019] The bulk passivated perovskite solar cell preparation method of the present invention improves the photoelectric conversion efficiency, enhances the stability of the cell, and optimizes the migration and separation process of carriers by effectively passivating the defects in the perovskite material. Combined with an excellent preparation process, it can improve the performance of the perovskite solar cell as a whole. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] In order to more clearly illustrate the technical solution of the embodiment of the present invention, the following is a brief introduction to the drawings required for use in the present invention: Figure 1 is a schematic diagram of a perovskite solar cell of the present invention; In the figure, 1. conductive substrate; 2. hole transport layer; 3. dielectric layer; 4. perovskite light absorption layer; 5. electron transport layer; 6. top electrode layer. DETAILED DESCRIPTION

[0021] The present invention will be further described below in conjunction with the accompanying drawings: In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, rather than all of the embodiments. The components of the embodiments of the present invention described and shown in the drawings here can usually be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of the present invention provided in the drawings is not intended to limit the scope of the claimed invention, but merely represents selected embodiments of the present invention. Based on the embodiments in the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention.

[0022] Bulk passivation refers to improving the performance of perovskite materials by introducing additives into the perovskite light-absorbing layer. Perovskite materials themselves have good photoelectric properties, but due to the presence of crystal defects and surface defects, these defects often lead to carrier recombination, thereby reducing the efficiency of solar cells. By performing bulk passivation on perovskite materials, the defects inside the crystal and surface defects can be effectively reduced, thereby reducing the recombination of carriers, improving the mobility and collection efficiency of carriers, and effectively improving the photocurrent and overall efficiency of the battery.

[0023] like Figure 1 As shown, a bulk passivated perovskite solar cell provided by the present invention includes a conductive substrate 1, a hole transport layer 2, a dielectric layer 3, a perovskite light absorption layer 4, an electron transport layer 5 and a top electrode layer 6 which are stacked in sequence.

[0024] The material of the hole transport layer is one or more of [2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl]phosphonic acid (MeO-2PACz), (2-(9H-carbazole-9-yl)ethyl)phosphonic acid (2PACz), (4-(3,6-dimethyl-9H-carbazole-9-yl)butyl)phosphonic acid (Me-4PACz) or [4-(9H-carbazole-9-yl)butyl]phosphonic acid (4PACz). Preferably, the material of the self-assembled monolayer is MeO-2PACz.

[0025] The material of the dielectric layer is Al2O3 nanoparticles.

[0026] The material of the perovskite light absorbing layer includes (FA 0.95 MA 0.05 ) 0.95 Cs 0.05 Pb(I 0.95 Br0.05 ) 3 and an additive, wherein the additive is guanidine chloride, and the concentration of guanidine chloride is 0.3-0.5 mg / mL. Preferably, the concentration of the guanidine chloride is 0.3-0.4 mg / mL.

[0027] The material of the electron transport layer is titanium dioxide (TiO2), tin oxide (SnO2) or fullerene (C 60 ) and a fullerene derivative. Preferably, the material of the electron transport layer is C 60 .

[0028] The material of the top electrode layer is one of gold, silver, copper, graphite or amorphous carbon. Preferably, the material of the top electrode layer is gold.

[0029] The conductive substrate is transparent conductive glass, and the transparent conductive glass is indium tin oxide (FTO).

[0030] In an embodiment of the present invention, the thickness of the conductive substrate is 200-400nm, preferably 250-350nm; specifically 290nm, 300nm, 310nm, 320nm, etc. The thickness of the hole transport layer is 1-5nm, preferably 1-3nm, and more preferably 1-2nm. The thickness of the dielectric layer is 30-60nm. The thickness of the perovskite light absorption layer is 300-700nm, preferably 300-500nm, and more preferably 400-500nm. The thickness of the electron transport layer is 10-100nm, preferably 20-80nm, more preferably 30-60nm, and most preferably 40-50nm. The thickness of the top electrode is 50-500nm, preferably 100-400nm, and more preferably 100-200nm.

[0031] In the following examples, unless otherwise specified, all materials used can be obtained through common channels; and the test methods adopted are conventional methods in the art.

[0032] Embodiment 1: The method for preparing the perovskite solar cell of this embodiment includes: S1, wash the FTO glass substrate with acetone, isopropanol and deionized water in sequence, blow dry and set aside; S2, spin coating MeO-2PACz solution (solvent is isopropanol, MeO-2PACz solution concentration is 0.6 mg / mL) on FTO glass substrate at 3000 rpm for 30 s, followed by annealing at 100 °C for 10 min to form a hole transport layer; the thickness of the hole transport layer is about 2 nm; S3, spin coating an Al2O3 nanoparticle solution (the solvent is isopropanol, the particle size of the Al2O3 nanoparticles is 30 nm, and the concentration of the Al2O3 nanoparticle solution is 1 mg / mL) on the hole transport layer at a rotation speed of 5000 rpm for 30 seconds, and then annealing in an environment of 100°C for 10 minutes to form a dielectric layer with a thickness of about 40 nm; S4, prepared according to stoichiometric ratio (FA 0.95 MA 0.05 ) 0.95 Cs 0.05 Pb(I 0.95 Br 0.05 )3 and guanidine chloride perovskite precursor solution (FA 0.95 MA 0.05 ) 0.95 Cs 0.05 Pb(I 0.95 Br 0.05 )3 concentration is 1.5mol / L, solvent is DMF:DMSO=4:1, guanidine chloride concentration is 0.3mg / mL) for 30s, take 100 microliters of perovskite precursor solution and spin coat it on the dielectric layer, the first stage spin coating speed is 2000rpm, spin coating for 10s, the second stage spin coating speed is 5000, spin coating for 40s, 15s before the end of spin coating, quickly add 200 microliters of chlorobenzene as anti-solvent, then anneal on a hot stage at 100°C for 30 minutes to form a perovskite light absorbing layer, the thickness of the perovskite light absorbing layer is about 400nm; S5, using vacuum evaporation method to deposit C on the perovskite light absorbing layer 60 , forming an electron transport layer, the thickness of the electron transport layer is about 40nm; S6, depositing gold on the electron transport layer by vacuum evaporation to form a top electrode layer, the thickness of the top electrode layer is about 100 nm; the perovskite solar cell of this embodiment is manufactured through the above steps.

[0033] Embodiment 2: The method for preparing the perovskite solar cell of this embodiment includes: S1, wash the FTO glass substrate with acetone, isopropanol and deionized water in sequence, blow dry and set aside; S2, spin coating Me-4PACz solution (solvent is isopropanol, Me-4PACz solution concentration is 0.6 mg / mL) on FTO glass substrate at 3000 rpm for 30 s, followed by annealing at 100 °C for 10 min to form a hole transport layer; the thickness of the hole transport layer is about 5 nm; S3, spin coating an Al2O3 nanoparticle solution (the solvent is isopropanol, the particle size of the Al2O3 nanoparticles is 30 nm, and the concentration of the Al2O3 nanoparticle solution is 1 mg / mL) on the hole transport layer at a rotation speed of 5000 rpm for 30 seconds, and then annealing in an environment of 100°C for 10 minutes to form a dielectric layer with a thickness of about 50 nm; S4, prepared according to stoichiometric ratio (FA 0.95 MA 0.05 ) 0.95 Cs 0.05 Pb(I 0.95 Br 0.05 )3 and guanidine chloride perovskite precursor solution (FA 0.95 MA 0.05 ) 0.95 Cs 0.05 Pb(I 0.95 Br 0.05 )3 concentration is 1.5mol / L, solvent is DMF:DMSO=4:1, guanidine chloride concentration is 0.4mg / mL) for 30s, take 100 microliters of perovskite precursor solution and spin coat it on the dielectric layer, the first stage spin coating speed is 2000rpm, spin coating for 10s, the second stage spin coating speed is 5000, spin coating for 40s, 15s before the end of spin coating, quickly add 200 microliters of chlorobenzene as anti-solvent, then anneal on a hot stage at 100°C for 30 minutes to form a perovskite light absorbing layer, the thickness of the perovskite light absorbing layer is about 400nm; S5, using vacuum evaporation method to deposit C on the perovskite light absorbing layer 60 , forming an electron transport layer, the thickness of the electron transport layer is about 40nm; S6, depositing gold on the electron transport layer by vacuum evaporation to form a top electrode layer, the thickness of the top electrode layer is about 100 nm; the perovskite solar cell of this embodiment is manufactured through the above steps.

[0034] Embodiment 3: The method for preparing the perovskite solar cell of this embodiment includes: S1, wash the FTO glass substrate with acetone, isopropanol and deionized water in sequence, blow dry and set aside; S2, spin coating MeO-2PACz solution (solvent is isopropanol, MeO-2PACz solution concentration is 0.6 mg / mL) on FTO glass substrate at 3000 rpm for 30 s, followed by annealing at 100 °C for 10 min to form a hole transport layer; the thickness of the hole transport layer is about 3 nm; S3, spin coating an Al2O3 nanoparticle solution (the solvent is isopropanol, the particle size of the Al2O3 nanoparticles is 30 nm, and the concentration of the Al2O3 nanoparticle solution is 1 mg / mL) on the hole transport layer at a rotation speed of 5000 rpm for 30 seconds, and then annealing in an environment of 100°C for 10 minutes to form a dielectric layer with a thickness of about 30 nm; S4, prepared according to stoichiometric ratio (FA 0.95 MA 0.05 ) 0.95 Cs 0.05 Pb(I 0.95 Br 0.05 )3 and guanidine chloride perovskite precursor solution (FA 0.95 MA 0.05 ) 0.95 Cs 0.05 Pb(I 0.95 Br 0.05 )3 concentration is 1.5mol / L, solvent is DMF:DMSO=4:1, guanidine chloride concentration is 0.5mg / mL) for 30s, take 100 microliters of perovskite precursor solution and spin coat it on the dielectric layer, the first stage spin coating speed is 2000rpm, spin coating for 10s, the second stage spin coating speed is 5000, spin coating for 40s, 15s before the end of spin coating, quickly add 200 microliters of chlorobenzene as anti-solvent, then anneal on a hot stage at 100°C for 30 minutes to form a perovskite light absorbing layer, the thickness of the perovskite light absorbing layer is about 400nm; S5, using a vacuum evaporation method to deposit SnO2 on the perovskite light-absorbing layer to form an electron transport layer, the thickness of the electron transport layer is about 50nm; S6, depositing gold on the electron transport layer by vacuum evaporation to form a top electrode layer, the thickness of the top electrode layer is about 200 nm; the perovskite solar cell of this embodiment is manufactured through the above steps.

[0035] Embodiment 4: The method for preparing the perovskite solar cell of this embodiment includes: S1, wash the FTO glass substrate with acetone, isopropanol and deionized water in sequence, blow dry and set aside; S2, spin coating MeO-2PACz solution (solvent is isopropanol, MeO-2PACz solution concentration is 0.6 mg / mL) on FTO glass substrate at 3000 rpm for 30 s, followed by annealing at 100 °C for 10 min to form a hole transport layer; the thickness of the hole transport layer is about 5 nm; S3, spin coating an Al2O3 nanoparticle solution (the solvent is isopropanol, the Al2O3 nanoparticle size is 30 nm, and the concentration of the Al2O3 nanoparticle solution is 1 mg / mL) on the hole transport layer at a rotation speed of 5000 rpm for 30 seconds, and then annealing in an environment of 100°C for 10 minutes to form a dielectric layer with a thickness of about 60 nm; S4, prepared according to stoichiometric ratio (FA 0.95 MA 0.05 ) 0.95 Cs 0.05 Pb(I 0.95 Br 0.05 )3 and guanidine chloride perovskite precursor solution (FA 0.95 MA 0.05 ) 0.95 Cs 0.05 Pb(I 0.95 Br 0.05 )3 concentration is 1.5mol / L, solvent is DMF:DMSO=4:1, guanidine chloride concentration is 0.3mg / mL) for 30s, take 100 microliters of perovskite precursor solution and spin coat it on the dielectric layer, the first stage spin coating speed is 2000rpm, spin coating for 10s, the second stage spin coating speed is 5000, spin coating for 40s, 15s before the end of spin coating, quickly add 200 microliters of chlorobenzene as anti-solvent, then anneal on a hot stage at 100°C for 30 minutes to form a perovskite light absorbing layer, the thickness of the perovskite light absorbing layer is about 400nm; S5, depositing TiO2 on the perovskite light-absorbing layer by vacuum evaporation to form an electron transport layer, the thickness of the electron transport layer is about 60 nm; S6, depositing graphite on the electron transport layer by vacuum evaporation to form a top electrode layer, the thickness of the top electrode layer is about 150 nm; the perovskite solar cell of this embodiment is manufactured through the above steps.

[0036] Comparative Example 1: The preparation method of the perovskite solar cell of this comparative example comprises: S1, wash the FTO glass substrate with acetone, isopropanol and deionized water in sequence, blow dry and set aside; S2, spin coating MeO-2PACz solution (solvent is isopropanol, MeO-2PACz solution concentration is 0.6 mg / mL) on FTO glass substrate at 3000 rpm for 30 s, followed by annealing at 100 °C for 10 min to form a hole transport layer; the thickness of the hole transport layer is about 30 nm; S3, spin coating an Al2O3 nanoparticle solution (the solvent is isopropanol, the particle size of the Al2O3 nanoparticles is 30 nm, and the concentration of the Al2O3 nanoparticle solution is 1 mg / mL) on the hole transport layer at a rotation speed of 5000 rpm for 30 seconds, and then annealing in an environment of 100°C for 10 minutes to form a dielectric layer with a thickness of about 2 nm; S4, prepared according to stoichiometric ratio (FA 0.95 MA 0.05 ) 0.95 Cs 0.05 Pb(I 0.95 Br 0.05 )3 perovskite precursor solution (FA 0.95 MA 0.05 ) 0.95 Cs 0.05 Pb(I 0.95 Br 0.05 )3 concentration is 1.5mol / L, the solvent is DMF:DMSO=4:1, )30s, take 100 microliters of perovskite precursor solution and spin coat it on the dielectric layer, the first stage spin coating speed is 2000rpm, spin coating 10s, the second stage spin coating speed is 5000, spin coating 40s, 15s before the end of spin coating, quickly add 200 microliters of chlorobenzene as anti-solvent, then anneal on a hot stage at 100°C for 30 minutes to form a perovskite light absorbing layer, the thickness of the perovskite light absorbing layer is about 400nm; S5, using vacuum evaporation method to deposit C on the perovskite light absorbing layer 60 , forming an electron transport layer, the thickness of the electron transport layer is about 40nm; S6, depositing gold on the electron transport layer by vacuum evaporation to form a top electrode layer, the thickness of the top electrode layer is about 100 nm; the perovskite solar cell of this comparative example is manufactured through the above steps.

[0037] Battery performance test: The performance of the perovskite solar cells prepared in the examples and comparative examples was tested under room temperature using a 3A solar simulator at 100 mW / cm 2 The photoelectric conversion efficiency of the cells prepared in the embodiment and the comparative example was tested under the light intensity of 0.084 cm 2 The test results are shown in Table 1: Table 1

[0038] As can be seen from Table 1, the photoelectric conversion efficiency of Example 1 is 1.7% higher than that of Comparative Example 1, which significantly improves the photoelectric conversion efficiency of the perovskite solar cell. In the present invention, guanidine chloride is added to the material of the perovskite light-absorbing layer as a passivation material for bulk passivation, which can effectively passivate the defects in the perovskite crystal and reduce the recombination phenomenon of carriers, thereby improving the photoelectric conversion efficiency of the battery; after guanidine chloride passivation, the defects in the crystal are repaired, the effective migration and collection efficiency of electrons and holes are improved, and the overall performance of the battery is enhanced.

[0039] The endpoints and any values ​​of the scope disclosed in the present invention are not limited to the precise scope or value, and these scopes or values ​​should be understood to include values ​​close to these scopes or values. For numerical ranges, the endpoint values ​​of each scope, the endpoint values ​​of each scope and the individual point values, and the individual point values ​​can be combined with each other to obtain one or more new numerical ranges, which should be regarded as specifically disclosed in this article. Hereinafter, in principle, each technical solution can be combined with each other to obtain a new technical solution, which should also be regarded as specifically disclosed in this article.

[0040] The above embodiments are only used to illustrate the technical solutions of the present invention rather than to limit the same. Although the present invention has been described in detail with reference to the above embodiments, a person skilled in the art can still modify or make equivalent substitutions to the specific implementations of the present invention. Any modifications or equivalent substitutions that do not depart from the spirit and scope of the present invention are within the scope of protection of the claims of the present invention to be approved.

Claims

1. A bulk passivated perovskite solar cell, characterized in that: It includes a conductive substrate, a hole transport layer, a dielectric layer, a perovskite light absorption layer, an electron transport layer and a top electrode layer which are stacked in sequence; The material of the perovskite light absorbing layer includes (FA 0.95 MA 0.05 ) 0.95 Cs 0.05 Pb(I 0.95 Br 0.05 )3 and guanidino chloride.

2. A bulk passivated perovskite solar cell according to claim 1, characterized in that: The concentration of the guanidine chloride is 0.3-0.5 mg / mL.

3. The bulk passivated perovskite solar cell according to claim 1, characterized in that: The material of the hole transport layer is one or more of MeO-2PACz, 2PACz, Me-4PACz or 4PACz.

4. The bulk passivated perovskite solar cell according to claim 1, characterized in that: The material of the dielectric layer is Al2O3 nanoparticles.

5. The bulk passivated perovskite solar cell according to claim 1, characterized in that: The material of the electron transport layer includes TiO2, SnO2 or one of fullerene and fullerene derivatives.

6. The bulk passivated perovskite solar cell according to claim 1, characterized in that: The material of the top electrode layer is one of gold, silver, copper, graphite or amorphous carbon.

7. The bulk passivated perovskite solar cell according to claim 1, characterized in that: The conductive substrate is made of indium tin oxide.

8. The bulk passivated perovskite solar cell according to claim 1, characterized in that: The thickness of the conductive substrate is 200~400nm; the thickness of the hole transport layer is 1~5n nm; the thickness of the dielectric layer is 30~60nm; the thickness of the perovskite light absorption layer is 300~700nm; the thickness of the electron transport layer is 10~100nm; and the thickness of the top electrode layer is 50~500nm.

9. A method for preparing a bulk passivated perovskite solar cell, characterized in that: include: Spin coating a solution including hole transport layer material on a conductive substrate, and annealing after spin coating to obtain a hole transport layer; Spin coating a solution including a dielectric layer material on the hole transport layer, and annealing after spin coating to obtain a dielectric layer; Spin coating on dielectric layer includes (FA 0.95 MA 0.05 ) 0.95 Cs 0.05 Pb(I 0.95 Br 0.05 )3 and guanidine chloride perovskite precursor solution, perform two-stage spin coating at different rotation speeds, add chlorobenzene to the perovskite precursor solution before the end of spin coating, and anneal after spin coating to obtain a perovskite light absorbing layer; The electron transport material and the top electrode material are sequentially deposited on the perovskite light-absorbing layer by vacuum evaporation to form an electron transport layer and a top electrode layer, respectively, to constitute a bulk passivated perovskite solar cell.

10. A photovoltaic device, characterized in that: A bulk passivated perovskite solar cell comprising the method described in any one of claims 1 to 8.

Images