Atomic gas chamber preparation equipment and method and atomic gas chamber

Abstract

The invention relates to the technical field of atomic gas chamber preparation, and discloses atomic gas chamber preparation equipment and method and an atomic gas chamber. The equipment comprises a vacuum box, a wafer bonding machine and an alkali metal injection device, the alkali metal injection device comprises a vacuum pump, an injection valve body, a heating piece, a vacuum firing pin and a vacuum probe row, the alkali metal injection and bonding process is carried out in a vacuum environment, and the situation that oxygen in the atmospheric environment oxidizes alkali metal and influences the quality of an atomic gas chamber can be effectively avoided; and meanwhile, external particulate matters are prevented from contaminating between the gas chamber component and the gas chamber sealing plate to influence the bonding effect and sealing performance, and the leakage rate of the atomic gas chamber can be effectively reduced, that is, the atomic gas chamber prepared by the atomic gas chamber preparation equipment is relatively high in yield and preparation efficiency.

Description

Technical Field

[0001] The present invention relates to the technical field of atomic gas chamber preparation, and in particular to an atomic gas chamber preparation device, method and atomic gas chamber. Background Art

[0002] Chip-type atomic clocks and gyroscopes play an important role in positioning and navigation, and their core components are MEMS atomic gas chambers; this type of atomic gas chamber has the advantages of small size and mass production. At present, the widely used method for the preparation of MEMS atomic gas chambers is to use compounds to react, produce alkali metals, and collect or encapsulate the produced alkali metals in MEMS microstructures. For example, alkali metals are directly injected into the MEMS structure and then encapsulated, but because alkali metals are extremely easy to oxidize, the yield rate is low and the quality of the finished product is poor; or two chambers are used, one chamber is used to produce and prepare alkali metals, and the other chamber is used for light and alkali metals to interact, so as to separate the residues after the preparation of alkali metals and improve the intensity of the interaction between light and alkali metals, but not only there is the problem of low efficiency, but also because of the use of two chambers, the bonding yield is low and the volume of the MEMS gas chamber product is large. That is, in the prior art, whether the alkali metal is directly injected into the MEMS microstructure to reduce impurities, or the reaction residues are separated by using a double chamber, there are problems of low quality and yield of the finished product. Summary of the invention

[0003] Based on the above, the purpose of the present invention is to provide an atomic gas chamber preparation device, method and atomic gas chamber to solve the technical problem of easy oxidation of alkali metals in the prior art, with a high degree of automation, better quality of the prepared atomic gas chamber and lower leakage rate.

[0004] To achieve the above object, the present invention adopts the following technical solutions:

[0005] An atomic gas chamber preparation device, wherein the prepared atomic gas chamber comprises a gas chamber sealing plate and a gas chamber component, one side of the gas chamber component has a plurality of spaced accommodation grooves, and the gas chamber sealing plate is sealed on the side of the gas chamber component having the accommodation grooves, characterized in that the atomic gas chamber preparation device comprises a vacuum box, a wafer bonding machine and an alkali metal injection device, the vacuum degree in the vacuum box is adjustable, and the alkali metal injection device comprises a vacuum pump, an injection valve body, a heating element, a vacuum striker and a vacuum probe row;

[0006] The injection valve body is arranged outside the vacuum box, and a placement cavity is provided in the injection valve body, and the placement cavity is used to place glass bubbles containing alkali metals, and the injection valve body has a vacuum port and an injection port connected to the placement cavity, and the vacuum pump is connected to the vacuum port;

[0007] The vacuum probe row is arranged in the vacuum box and is connected to or not connected to the injection port;

[0008] The vacuum striker is movably disposed in the placement cavity and is used to strike the glass bulb;

[0009] The heating element is attached to the injection valve body to generate heat to liquefy the alkali metal. When the vacuum probe is connected to the injection port, the liquefied alkali metal is injected into each of the containing tanks via the injection port and the vacuum probe row.

[0010] The wafer bonding machine is arranged in the vacuum box and is used for bonding the gas chamber sealing plate and the gas chamber component.

[0011] As a preferred solution for atomic gas chamber preparation equipment, a mounting hole is provided on the vacuum box, the vacuum probe row is connected to the inner end of the mounting hole, the injection port is connected to the outer end of the mounting hole, and a valve is provided at the mounting hole, and the valve is used to control the opening and closing of the mounting hole.

[0012] As a preferred solution for an atomic gas chamber preparation device, the vacuum probe row includes a joint plate and a plurality of vacuum probes arranged in an array on the joint plate, the plurality of vacuum probes can be inserted one by one into the plurality of accommodating grooves, the joint plate has an inner cavity and an interface communicating with the inner cavity, the interface is sealed and connected to the mounting hole, and the plurality of vacuum probes are communicated with the inner cavity.

[0013] As a preferred solution for atomic gas chamber preparation equipment, the alkali metal injection device also includes a driving source and a bellows. The bellows is arranged in the placement cavity, one end of the bellows is sealed and connected to the inner wall of the placement cavity, the vacuum striker is sleeved in the bellows and partially seals and extends out of the other end of the bellows, and the driving source can drive the vacuum striker to move.

[0014] As a preferred solution for an atomic gas chamber preparation device, the alkali metal injection device also includes a sealing blind plate, the injection valve body also has a placement port communicating with the placement cavity, the sealing blind plate is detachably and sealingly connected to the placement port, and the glass bubble can enter the placement cavity from the placement port.

[0015] As a preferred solution of an atomic gas chamber preparation device, the alkali metal injection device also includes a gas cylinder, and the injection valve body also has a charging port communicating with the placement cavity, and the gas cylinder is connected to the charging port for charging pressurized gas.

[0016] As a preferred solution for atomic gas chamber preparation equipment, it also includes a vacuum manipulator and a gas chamber sealing plate placement table arranged in the vacuum box, the gas chamber sealing plate is placed on the gas chamber sealing plate placement table, the vacuum manipulator is used to move the gas chamber component to align with the vacuum probe and place it in the wafer bonding machine, and is also used to move the gas chamber sealing plate and place it on the gas chamber component.

[0017] A method for preparing an atomic gas chamber, comprising:

[0018] Placing a glass bubble containing an alkali metal in the placement cavity, wherein the injection port and the vacuum probe are disconnected;

[0019] Turning on the vacuum pump to evacuate the placement chamber to a first preset vacuum degree, and adjusting the vacuum degree in the vacuum box to a second preset vacuum degree;

[0020] Aligning the receiving groove of the air chamber component with the vacuum probe row;

[0021] Moving the vacuum striker until the glass bulb is broken, and turning on the heating element to liquefy the alkali metal;

[0022] The injection port is connected to the vacuum probe, and the liquefied alkali metal is injected into the containing tank through the vacuum probe row;

[0023] placing the gas chamber component containing the alkali metal and the gas chamber sealing plate into the wafer bonding machine;

[0024] The wafer bonding machine is turned on to bond the gas chamber component and the gas chamber sealing plate to form the atomic gas chamber.

[0025] As a preferred solution of the atomic gas chamber preparation method, the atomic gas chamber preparation device further includes a gas cylinder, the injection valve body further includes a gas charging port communicating with the placement cavity, the gas cylinder is connected to the gas charging port, and after the injection port is connected to the vacuum probe, the atomic gas chamber preparation method further includes:

[0026] The control valve of the gas cylinder is opened, and the pressurized gas in the gas cylinder enters the placement cavity and delivers the liquefied alkali metal to the vacuum probe.

[0027] An atomic gas chamber is prepared by the atomic gas chamber preparation method described above.

[0028] The beneficial effects of the present invention are:

[0029] The present invention provides an atomic gas chamber preparation device, wherein the injection and bonding processes of alkali metals are carried out in a vacuum environment, which can effectively prevent the oxygen in the atmospheric environment from causing oxidation of the alkali metals to affect the quality of the atomic gas chamber, and at the same time prevent foreign particles from being contaminated between the gas chamber components and the gas chamber sealing plate to affect the bonding effect and sealing, and can effectively reduce the leakage rate of the atomic gas chamber, that is, the atomic gas chamber prepared by the atomic gas chamber preparation device has a higher yield and a higher preparation efficiency.

[0030] The present invention also provides an atomic gas chamber preparation method. Based on the above-mentioned atomic gas chamber preparation equipment, the method is simple to operate and has high preparation efficiency. The prepared atomic gas chamber has better quality and lower leakage rate.

[0031] The present invention also provides an atomic gas chamber, which has the advantages of better quality and lower leakage rate. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments of the present invention. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on the contents of the embodiments of the present invention and these drawings without paying any creative work.

[0033] Figure 1 is a schematic structural diagram of an atomic gas chamber preparation device provided in an embodiment of the present invention;

[0034] Figure 2 is a cross-sectional view of an alkali metal injection device provided by an embodiment of the present invention;

[0035] Figure 3 is a cross-sectional view of an injection valve body provided by an embodiment of the present invention;

[0036] Figure 4 is a cross-sectional view of an air chamber component provided by an embodiment of the present invention;

[0037] Figure 5 is a cross-sectional view of an atomic gas chamber provided by an embodiment of the present invention;

[0038] Figure 6 It is a flow chart of the atomic gas chamber preparation method provided in an embodiment of the present invention.

[0039] In the figure:

[0040] 1. Vacuum box;

[0041] 2. Wafer bonding machine; 21. Processing table; 22. Pressure and temperature control panel; 23. High-voltage discharge needle;

[0042] 3. Alkali metal injection device; 31. Injection valve body; 32. Heating element; 33. Vacuum striker; 34. Vacuum probe row; 341. Connector plate; 342. Vacuum probe; 35. Bellows; 36. Blocking screen;

[0043] 4. Vacuum manipulator; 5. Air chamber sealing plate placement table;

[0044] 10. Placement cavity; 20. Vacuuming port; 30. Injection port; 40. Mounting hole; 50. Inflating port;

[0045] 100. Air chamber components; 200. Air chamber sealing plate; 300. Glass bulb; 400. Alkali metal. DETAILED DESCRIPTION

[0046] The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It is to be understood that the specific embodiments described herein are only used to explain the present invention, rather than to limit the present invention. It should also be noted that, for ease of description, only parts related to the present invention, rather than all structures, are shown in the accompanying drawings.

[0047] In the description of the present invention, unless otherwise clearly specified and limited, the terms "connected", "connected", and "fixed" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0048] In the present invention, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may include that the first and second features are in direct contact, or may include that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, a first feature being "above", "above" and "above" a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is higher in level than the second feature. A first feature being "below", "below" and "below" a second feature includes that the first feature is directly below and obliquely below the second feature, or simply indicates that the first feature is lower in level than the second feature.

[0049] In the description of the present embodiment, the terms "upper", "lower", "left", "right" and other directions or positional relationships are based on the directions or positional relationships shown in the accompanying drawings, and are only for the convenience of description and simplification of operation, rather than indicating or implying that the device or element referred to must have a specific direction, be constructed and operated in a specific direction, and therefore cannot be understood as a limitation of the present invention. In the description of the present invention, unless otherwise specified, the meaning of "plurality" is two or more. In addition, the terms "first" and "second" are only used to distinguish in the description and have no special meaning.

[0050] like Figures 1 to 5 As shown, this embodiment provides an atomic gas chamber preparation device, which is used to prepare a MEMS alkali metal 400 atomic gas chamber. The prepared atomic gas chamber includes a gas chamber sealing plate 200 and a gas chamber component 100. One side of the gas chamber component 100 has a plurality of spaced-apart receiving grooves, and the gas chamber sealing plate 200 is enclosed on the side of the gas chamber component 100 having the receiving grooves.

[0051] Specifically, the atomic gas chamber preparation equipment includes a vacuum box 1, a wafer bonding machine 2 and an alkali metal 400 injection device 3. The vacuum degree in the vacuum box 1 is adjustable. The alkali metal 400 injection device 3 is used to inject liquid alkali metal 400 into the gas chamber component 100 under a vacuum environment. The wafer bonding machine 2 is used to bond and seal the gas chamber component 100 and the gas chamber sealing plate 200 under a vacuum environment to obtain an atomic gas chamber. The injection of alkali metal 400 and the bonding process are both carried out under a vacuum environment, which can effectively prevent the oxygen in the atmospheric environment from oxidizing the alkali metal 400 and affecting the quality of the atomic gas chamber. At the same time, it can prevent foreign particles from being contaminated between the gas chamber component 100 and the gas chamber sealing plate 200 to affect the bonding effect and sealing, and can effectively reduce the leakage rate of the atomic gas chamber, that is, the atomic gas chamber prepared by the atomic gas chamber preparation equipment has a high yield and a high preparation efficiency.

[0052] The atomic gas chamber preparation device further includes a vacuum pumping device, which is connected to the vacuum box 1, and the vacuum box 1 is evacuated by the vacuum pumping device to adjust the vacuum degree in the vacuum box 1. Exemplarily, the vacuum degree in the vacuum box 1 is E-3Pa, which is set according to actual needs.

[0053] More specifically, the alkali metal 400 injection device 3 includes a vacuum pump, an injection valve body 31, a heating element 32, a vacuum striker 33 and a vacuum probe row 34. The injection valve body 31 is arranged outside the vacuum box 1. The injection valve body 31 has a placement cavity 10. The placement cavity 10 is used to place the glass bubble 300 containing the alkali metal 400. The injection valve body 31 has a vacuum port 20 and an injection port 30 connected to the placement cavity 10. The vacuum pump is connected to the vacuum port 20. The injection valve body 31 is evacuated by the vacuum pump so that the placement cavity 10 The vacuum degree reaches a preset value to avoid oxidation during the subsequent injection of the alkali metal 400; the vacuum probe row 34 is arranged in the vacuum box 1 and is connected or not connected to the injection port 30, the vacuum striker 33 is movably arranged in the placement cavity 10, and is used to break the glass bulb 300, and the heating element 32 is attached to the outside of the injection valve body 31, and is used to generate heat to liquefy the alkali metal 400. When the vacuum probe 342 is connected to the injection port 30, the liquefied alkali metal 400 is injected into each containing groove via the injection port 30 and the vacuum probe row 34. The alkali metal 400 is wrapped by a glass bulb 300 to isolate the alkali metal 400 from oxygen in the atmospheric environment, and then the placement chamber 10 is made to reach a vacuum environment by evacuation, so that the alkali metal 400 is still in the vacuum environment after the vacuum striker 33 breaks the glass bulb 300, thereby avoiding oxidation; then, the alkali metal 400 is heated by the heating element 32 to liquefy the alkali metal 400 so that it can be smoothly injected into the gas chamber component 100 in the vacuum environment along the vacuum probe row 34, thereby completing the injection of the alkali metal 400 in an environment without contact with oxygen throughout the process, thereby ensuring the quality of the obtained atomic gas chamber; finally, the gas chamber sealing plate 200 and the gas chamber component 100 are bonded by the wafer bonding machine 2 to obtain an atomic gas chamber with a lower leakage rate and better quality.

[0054] Preferably, a blocking mesh plate 36 is provided in the internal space of the injection valve body 31, and the blocking mesh plate 36 divides the internal space of the injection valve body 31 into a placement chamber 10 and a flow chamber. The blocking mesh plate 36 is used to block the broken fragments of the glass bubble 300, and block the glass bubble 300 fragments in the placement chamber 10. At the same time, the liquid alkali metal 400 passes through the blocking mesh plate 36 smoothly and flows to the injection port 30, so as to prevent the glass bubble 300 fragments from blocking the injection port 30 or the vacuum probe row 34, and at the same time facilitate the cleaning of the glass bubble 300 fragments in the placement chamber 10.

[0055] Among them, the vacuum pump and the vacuum extraction device can be the same structure, that is, one vacuum pump is used to evacuate the vacuum box 1 and the placement chamber 10 respectively. The vacuum pump and the vacuum extraction device can also be different structures, that is, two vacuum pumps are used to evacuate the vacuum box 1 and the placement chamber 10 respectively. The specific setting is based on actual needs.

[0056] Optionally, the heating element 32 is a heating wire, which is wound around the injection valve body 31, and the heating wire is connected to a power source, which is powered by the power source, and the heating wire generates heat, which has a simple structure and low cost. Preferably, a spiral installation groove is provided outside the injection valve body 31, and the heating wire is embedded in the installation groove, so as to improve the appearance and compactness of the alkali metal 400 injection device 3. Of course, in other embodiments, the heating element 32 can also be other, for example, the heating element 32 is a semiconductor heating plate, and the semiconductor heating plate is attached to the outside of the injection valve body 31.

[0057] Specifically, the alkali metal 400 injection device 3 further includes a sealing blind plate, and the injection valve body 31 also has a placement port communicating with the placement chamber 10. The sealing blind plate is detachably and sealingly connected to the placement port, and the glass bubble 300 can enter the placement chamber 10 from the placement port. When preparing the atomic gas chamber, the sealing blind plate is opened, the glass bubble 300 encapsulating the alkali metal 400 is placed in the placement chamber 10, the sealing blind plate is closed, and then subsequent operations are performed.

[0058] In this embodiment, a vacuum manipulator 4 and a gas chamber sealing plate placement table 5 are further provided in the vacuum box 1 . The vacuum manipulator 4 is used to transfer the gas chamber component 100 and the gas chamber sealing plate 200 . Before starting to prepare the atomic gas chamber, open the door of the vacuum box 1, place the clean gas chamber sealing plate 200 on the gas chamber sealing plate placement table 5, and place the clean gas chamber component 100 on the vacuum manipulator 4, then close the door of the vacuum box 1, start the vacuum pumping device to evacuate the vacuum box 1; turn on the vacuum manipulator 4, and the vacuum manipulator 4 moves the gas chamber component 100 to align with the vacuum probe row 34 according to the first preset program; after injecting the liquefied alkali metal 400 into the gas chamber component 100 through the alkali metal 400 injection device 3, start the vacuum manipulator 4 again, and the vacuum manipulator 4 moves the gas chamber component 100 containing the alkali metal 400 to the wafer bonding machine 2 according to the second preset program, and then move the gas chamber sealing plate 200 on the gas chamber sealing plate placement table 5 to the upper end of the gas chamber component 100 according to the third preset program; finally, the gas chamber component 100 and the gas chamber sealing plate 200 are bonded and sealed by the wafer bonding machine 2. By adopting the vacuum manipulator 4, the preparation efficiency can be effectively improved, the preparation process can be carried out in a vacuum environment throughout the whole process, and the yield of the atomic gas chamber finally obtained can be improved.

[0059] Preferably, the alkali metal 400 injection device 3 also includes a gas cylinder, and the injection valve body 31 also has a gas filling port 50 connected to the placement chamber 10, and the gas cylinder is connected to the gas filling port 50 for filling with pressurized gas. Among them, the gas cylinder is preferably provided with a control valve, or the gas cylinder is connected to the gas filling port 50 through a gas filling pipe, and the gas filling pipe is provided with a control valve. The gas cylinder is filled with high-purity gas, that is, pressurized gas. After the alkali metal 400 is liquefied, the control valve is opened, and the high-purity gas in the gas cylinder is rushed into the placement chamber 10, and then the liquid alkali metal 400 is rushed into the vacuum probe row 34 and then injected into the receiving tank to realize automatic liquid injection. Among them, the high-purity gas can be nitrogen, argon or helium, with a purity of 99.999% and a pressure of 50 to 300 Tor, for example, a pressure of 50 Tor, 100 Tor, 150 Tor, 200 Tor, 250 Tor or 300 Tor, etc.

[0060] Furthermore, a mounting hole 40 is provided on the vacuum box 1, the vacuum probe row 34 is connected to the inner end of the mounting hole 40, the injection port 30 is connected to the outer end of the mounting hole 40, and a valve is provided at the mounting hole 40, and the valve is used to control the opening and closing of the mounting hole 40. When the alkali metal 400 is liquefied, the valve is opened so that the mounting hole 40 is opened, that is, the injection port 30 is connected to the vacuum probe row 34, and the liquefied alkali metal 400 flows from the injection port 30 into the vacuum probe row 34, and is injected into each containing groove by the vacuum probe row 34; after the injection is completed, the valve is closed so that the mounting hole 40 is closed, that is, the connection between the injection port 30 and the vacuum probe row 34 is disconnected, so as to ensure the vacuum environment in the vacuum box 1.

[0061] Preferably, the valve is a blind plate valve, and the injection valve body 31 is connected to the mounting hole 40 of the vacuum box 1 through the blind plate valve. By operating the opening and closing of the blind plate valve, the injection port 30 and the mounting hole 40 can be connected and disconnected.

[0062] Specifically, the vacuum probe row 34 includes a joint plate 341 and a plurality of vacuum probes 342 arranged in an array on the joint plate 341, and the plurality of vacuum probes 342 can be inserted into a plurality of receiving grooves one by one, and the joint plate 341 has an inner cavity and an interface communicating with the inner cavity, and the interface is sealed and connected to the mounting hole 40, and the plurality of vacuum probes 342 are communicated with the inner cavity. Exemplarily, the interface is sealed and connected to the inner wall of the vacuum box 1 by bolts, and is directly opposite to the connecting mounting hole 40, and a sealing gasket is preferably provided at the connection between the joint plate 341 and the inner wall of the vacuum box 1. A plurality of vacuum probes 342 are installed through the joint plate 341, and the connection with the mounting hole 40 is realized, and at the same time, the liquefied alkali metal 400 enters the inner cavity and then flows into each vacuum probe 342, which is conducive to ensuring the uniformity of the injection amount of the liquid alkali metal 400 of each vacuum probe 342, and improving the quality of the atomic gas chamber finally obtained. It should be noted that the number of vacuum probes 342 is equal to the number of receiving slots of the air chamber component 100 to be injected with the alkali metal 400, and the distribution is also thought out to ensure that each vacuum probe 342 can be inserted into a corresponding receiving slot. In this embodiment, a plurality of vacuum probe rows 34 are provided, each with different specifications to match the air chamber components 100 to be injected with the alkali metal 400 of different specifications. Preferably, the joint plate 341 is detachably connected to the inner wall of the vacuum box 1, for example, by bolts, so as to replace vacuum probe rows 34 of different specifications.

[0063] The cross-sectional area of ​​each vacuum probe 342 is one third or one half of the cross-sectional area of ​​each receiving groove, etc., to ensure that each vacuum probe 342 can be smoothly inserted into the receiving groove while ensuring the injection rate of the alkali metal 400.

[0064] Furthermore, the alkali metal 400 injection device 3 also includes a driving source and a bellows 35. The bellows 35 is arranged in the placement chamber 10. One end of the bellows 35 is sealed and connected to the inner wall of the placement chamber 10. The vacuum striker 33 is sleeved in the bellows 35 and partially seals and extends out of the other end of the bellows 35. The driving source can drive the vacuum striker 33 to move. Among them, a movable hole is opened on the injection valve body 31. One end of the vacuum striker 33 extends from the bellows 35, and the other end is movably inserted through the movable hole and extends to the outside of the injection valve body 31 to connect to the output end of the driving source. Preferably, the vacuum striker 33 is sealed and inserted into the movable hole. For example, a sealing ring is embedded in the movable hole, and the vacuum striker 33 is sealed and inserted into the sealing ring. The vacuum environment of the placement chamber 10 is isolated by the bellows 35, so that the vacuum striker 33 can move smoothly under the action of the driving source. When the vacuum striker 33 moves, the bellows 35 expands and contracts accordingly, so that the vacuum striker 33 moves smoothly and the bellows 35 and the vacuum striker 33 have better sealing.

[0065] Exemplarily, the driving source is a driving cylinder, which is arranged outside the injection valve body 31. The driving cylinder drives the vacuum striker 33 to reciprocate in one direction, and preferably drives the vacuum striker 33 to reciprocate along its own axis. The axis of the vacuum striker 33 preferably coincides with the axis of the bellows 35.

[0066] The structure of the injection valve body 31 is described below with reference to a specific example:

[0067] The injection valve body 31 includes two "cross" intersecting pipes, one end of one pipe is a vacuum port 20, and the other end is an injection port 30, and one end of the other pipe is an air filling port 50, and the other end is provided with a movable hole, and the pipe is also provided with a storage port, a blocking mesh plate 36 is provided inside the pipe, and heating wires are wound around the outside of the two pipes. The above structure is simple and the appearance is relatively neat and beautiful.

[0068] Of course, in other embodiments, the structure of the injection valve body 31 may be other and is not limited to the above-mentioned example structure.

[0069] After the alkali metal 400 is injected into the receiving groove of the gas chamber component 100 , the gas chamber component 100 is transferred to the wafer bonding machine 2 by the vacuum robot 4 , and then the gas chamber sealing plate 200 is transferred onto the gas chamber component 100 . Specifically, the wafer bonding machine 2 includes a processing table 21, a pressure and temperature control disk 22 and a high-voltage discharge needle 23. The vacuum manipulator 4 transfers the gas chamber component 100 to the processing table 21 for fixing. A limiting device is preferably provided on the processing table 21. The limiting device is used to clamp or loosen the gas chamber component 100 to ensure the position stability of the gas chamber component 100; the pressure and temperature control disk 22 is movable in the height direction and is arranged above the processing table 21 so that it can be pressed on the gas chamber sealing plate 200 or away from the gas chamber sealing plate 200. The pressure and temperature control disk 22 is used to provide pressure and the temperature required for bonding; the high-voltage discharge needle 23 is arranged on one side of the processing table 21 and is aligned with the bonding surface of the gas chamber component 100 and the gas chamber sealing plate 200, so as to apply the voltage and weak current required for bonding.

[0070] The limiting device, for example, includes at least two clamping members spaced apart on the processing table 21, each clamping member includes a driving cylinder and a limiting plate connected to the output end of the driving cylinder, and the driving cylinder drives the limiting plate to move radially along the air chamber component 100, so as to achieve the clamping, limiting or loosening of the air chamber component 100 by at least two limiting plates. The limiting plate is preferably arc-shaped to improve the limiting ability of the air chamber component 100; a protective flexible pad is provided on the side of the limiting plate contacting the air chamber component 100 to avoid damage to the air chamber component 100.

[0071] Specifically, the bonding machine also includes a driving device, which drives the pressure temperature control disk 22 to drive the pressure temperature control disk 22 to move in the height direction. The driving device can be selected but not limited to a cylinder. The pressure temperature control disk 22 includes a disk body, and a bonding heating wire is arranged in the disk body. The bonding heating wire is connected to an external power supply, and the bonding heating wire is powered by the power supply, so that the bonding heating wire generates heat. The pressure temperature control disk 22 is driven to move by the driving device, so that the pressure temperature control disk 22 approaches the air chamber sealing plate 200, and is finally pressed on the air chamber sealing plate 200 with a preset pressure; at the same time, the bonding heating wire is heated to a preset bonding temperature, and the air chamber sealing plate 200 and the air chamber are bonded to form a closed integrated structure under the pressure, temperature, current and voltage conditions required for bonding. Exemplarily, when the air chamber component 100 and the air chamber sealing plate 200 are bonded, the driving device drives the pressure and temperature control disk 22 to apply a pressure of 5kN to 10kN on the air chamber sealing plate 200, for example, 5kN, 7kN, 9kN or 10kN, etc. The pressure and temperature control disk 22 is heated to 350 to 450°C, for example, heated to 350°C, 380°C, 400°C, 420°C or 450°C, etc. The voltage generated by the high-voltage discharge needle 23 is 400 to 1000V, for example, the voltage is 400V, 500V, 600V, 700V, 800V, 900V or 1000V, etc., and the current is 0.5 to 5mA, for example, the current is 0.5mA, 1mA, 2mA, 3mA, 4mA or 5mA, etc.

[0072] like Figures 1 to 6 As shown, this embodiment also provides an atomic gas chamber preparation method, which is implemented based on the above-mentioned atomic gas chamber preparation device. Specifically, the atomic gas chamber preparation method includes the following steps:

[0073] S1: placing the glass bulb 300 containing the alkali metal 400 in the placement chamber 10, at which time the injection port 30 and the vacuum probe 342 are disconnected;

[0074] It should be noted that the preparation method of the glass bulb 300 containing the alkali metal 400 can be prepared by using existing mature technology, which will not be described in detail here.

[0075] When preparing the atomic gas chamber, after confirming that the blind plate valve is in a closed state, the sealing blind plate is opened, the glass bulb 300 is placed in the placement cavity 10, and then the sealing blind plate is closed to ensure that the placement cavity 10 remains a closed space.

[0076] S2: Turn on the vacuum pump to evacuate the placement chamber 10 to a first preset vacuum degree, and adjust the vacuum degree in the vacuum box 1 to a second preset vacuum degree;

[0077] Before starting the vacuuming, the clean air chamber sealing plate 200 is placed on the air chamber sealing plate placing table 5 , and the clean air chamber component 100 is placed on the vacuum manipulator 4 .

[0078] Exemplarily, the first preset vacuum degree is 1E-2Pa to 1E-3Pa, and the second preset vacuum degree is 1E-3Pa to 1E-4Pa. The first preset vacuum degree and the second preset vacuum degree may be the same.

[0079] S3: Align the receiving groove of the air chamber component 100 with the vacuum probe row 34;

[0080] Specifically, the air chamber member 100 is moved by the vacuum robot 4 so that each vacuum probe 342 is inserted into a receiving groove.

[0081] It should be noted that before preparing the atomic gas cell, a vacuum probe row 34 of corresponding specifications is assembled according to the specifications of the atomic gas cell to be prepared. For details, refer to the description of the atomic gas cell preparation equipment mentioned above.

[0082] It should be noted that there is no particular order for step S3 and step S2.

[0083] S4: moving the vacuum striker 33 to break the glass bulb 300, turning on the heating element 32, so that the alkali metal 400 is liquefied;

[0084] The driving source is turned on, and the driving source drives the vacuum striker 33 to move to break the glass bulb 300, and the alkali metal 400 is directly placed in the placement cavity 10; the alkali metal 400 is heated by the heating element 32, and is liquefied, so that it is convenient to be injected into the receiving tank later.

[0085] The heating temperature of the heating element 32 is 30-50° C., for example, the heating temperature is 30° C., 40° C. or 50° C., etc.

[0086] S5: connecting the injection port 30 with the vacuum probe 342, and injecting the liquefied alkali metal 400 into the containing tank through the vacuum probe row 34;

[0087] Specifically, the blind plate valve is opened, which may be electrically controlled or manually controlled, so that the injection port 30 is connected to the vacuum probe row 34 , so that the liquid alkali metal 400 can flow into the vacuum probe row 34 through the injection port 30 .

[0088] Preferably, after the injection port 30 is connected to the vacuum probe 342, the control valve on the gas cylinder or the gas charging tube is opened, and the pressurized gas in the gas cylinder enters the placement chamber 10, and the liquefied alkali metal 400 is sent to the vacuum probe 342. By charging the gas cylinder with pressurized gas, the alkali metal 400 can be smoothly flushed into the vacuum probe row 34, and the automatic injection of the liquid alkali metal 400 is completed, which improves the smoothness and reliability of the atomic gas chamber preparation process and is conducive to improving the preparation efficiency.

[0089] S6: placing the gas chamber component 100 containing the alkali metal 400 and the gas chamber sealing plate 200 into the wafer bonding machine 2;

[0090] The vacuum robot 4 is used to first place the gas chamber component 100 on the processing table 21 of the wafer bonding machine 2, and then the vacuum robot 4 is used to place the gas chamber sealing plate 200 on the gas chamber component 100. The alignment accuracy is high, which is conducive to improving the bonding yield.

[0091] Preferably, before transferring the gas chamber component 100, a preset amount of buffer gas is first injected into the vacuum box 1, and then the vacuum manipulator 2 is started to move the gas chamber component 100 to the wafer bonding machine 2. The role of the buffer gas is to adjust the gas ratio and composition in the atomic gas chamber after bonding, and to improve the performance of the atomic gas chamber after bonding. Exemplarily, the buffer gas is nitrogen or argon, and the filling level is 50 Torr to 300 Torr.

[0092] S7: Turn on the wafer bonding machine 2, and the wafer bonding machine 2 bonds the gas chamber component 100 and the gas chamber sealing plate 200 to form an atomic gas chamber.

[0093] The specific structure and working principle of the wafer bonding machine 2 refer to the description of the above-mentioned atomic gas chamber preparation equipment, which will not be repeated here.

[0094] This embodiment also provides an atomic gas chamber, which is manufactured by the above-mentioned atomic gas chamber manufacturing method. The manufactured atomic gas chamber has better quality and lower leakage rate.

[0095] Note that the above are only preferred embodiments of the present invention and the technical principles used. Those skilled in the art will understand that the present invention is not limited to the specific embodiments described herein, and that various obvious changes, readjustments and substitutions can be made by those skilled in the art without departing from the scope of protection of the present invention. Therefore, although the present invention has been described in more detail through the above embodiments, the present invention is not limited to the above embodiments, and may include more other equivalent embodiments without departing from the concept of the present invention, and the scope of the present invention is determined by the scope of the appended claims.

Claims

1. An atomic gas chamber preparation device, wherein the prepared atomic gas chamber comprises a gas chamber sealing plate and a gas chamber component, one side of the gas chamber component has a plurality of spaced accommodation grooves, the gas chamber sealing plate is sealed on the side of the gas chamber component having the accommodation grooves, characterized in that: The atomic gas chamber preparation equipment comprises a vacuum box, a wafer bonding machine and an alkali metal injection device, the vacuum degree in the vacuum box is adjustable, and the alkali metal injection device comprises a vacuum pump, an injection valve body, a heating element, a vacuum striker and a vacuum probe row; The injection valve body is arranged outside the vacuum box, and a placement cavity is provided in the injection valve body, and the placement cavity is used to place glass bubbles containing alkali metals, and the injection valve body has a vacuum port and an injection port connected to the placement cavity, and the vacuum pump is connected to the vacuum port; The vacuum probe row is arranged in the vacuum box and is connected to or not connected to the injection port; The vacuum striker is movably disposed in the placement cavity and is used to strike the glass bulb; The heating element is attached to the injection valve body to generate heat to liquefy the alkali metal. When the vacuum probe is connected to the injection port, the liquefied alkali metal is injected into each of the containing tanks via the injection port and the vacuum probe row. The wafer bonding machine is arranged in the vacuum box and is used for bonding the gas chamber sealing plate and the gas chamber component.

2. The atomic gas chamber preparation device according to claim 1, characterized in that: The vacuum box is provided with a mounting hole, the vacuum probe row is connected with the inner end of the mounting hole, the injection port is connected with the outer end of the mounting hole, and a valve is provided at the mounting hole for controlling the opening and closing of the mounting hole.

3. The atomic gas chamber preparation device according to claim 2, characterized in that: The vacuum probe row includes a joint tray and a plurality of vacuum probes arranged in an array on the joint tray. The plurality of vacuum probes can be inserted into the plurality of accommodating grooves one by one. The joint tray has an inner cavity and an interface communicating with the inner cavity. The interface is sealed and connected to the mounting hole. The plurality of vacuum probes are communicated with the inner cavity.

4. The atomic gas chamber preparation device according to claim 1, characterized in that: The alkali metal injection device also includes a driving source and a bellows. The bellows is arranged in the placement cavity. One end of the bellows is sealed and connected to the inner wall of the placement cavity. The vacuum striker is sleeved in the bellows and partially seals and extends out of the other end of the bellows. The driving source can drive the vacuum striker to move.

5. The atomic gas chamber preparation device according to claim 1, characterized in that: The alkali metal injection device also includes a sealing blind plate, and the injection valve body also has a placement port communicating with the placement cavity. The sealing blind plate is detachably and sealingly connected to the placement port, and the glass bulb can enter the placement cavity from the placement port.

6. The atomic gas chamber preparation device according to claim 1, characterized in that: The alkali metal injection device also includes a gas cylinder, and the injection valve body also has a gas filling port communicated with the placement cavity, and the gas cylinder is connected to the gas filling port for filling with pressurized gas.

7. The atomic gas chamber preparation device according to claim 1, characterized in that: It also includes a vacuum manipulator and an air chamber sealing plate placement table arranged in the vacuum box, the air chamber sealing plate is placed on the air chamber sealing plate placement table, the vacuum manipulator is used to move the air chamber component to align with the vacuum probe and place it in the wafer bonding machine, and is also used to move the air chamber sealing plate and place it on the air chamber component.

8. A method for preparing an atomic gas chamber, based on the atomic gas chamber preparation device according to any one of claims 1 to 7, characterized in that: The atomic gas chamber preparation method comprises: Placing a glass bubble containing an alkali metal in the placement cavity, wherein the injection port and the vacuum probe are disconnected; Turning on the vacuum pump to evacuate the placement chamber to a first preset vacuum degree, and adjusting the vacuum degree in the vacuum box to a second preset vacuum degree; Aligning the receiving groove of the air chamber component with the vacuum probe row; Moving the vacuum striker until the glass bulb is broken, and turning on the heating element to liquefy the alkali metal; The injection port is connected to the vacuum probe, and the liquefied alkali metal is injected into the containing tank through the vacuum probe row; placing the gas chamber component containing the alkali metal and the gas chamber sealing plate into the wafer bonding machine; The wafer bonding machine is turned on to bond the gas chamber component and the gas chamber sealing plate to form the atomic gas chamber.

9. The method for preparing an atomic gas chamber according to claim 8, characterized in that: The atomic gas chamber preparation device further includes a gas cylinder, the injection valve body further includes a gas charging port communicating with the placement cavity, the gas cylinder is connected to the gas charging port, and after the injection port is connected to the vacuum probe, the atomic gas chamber preparation method further includes: The control valve of the gas cylinder is opened, and the pressurized gas in the gas cylinder enters the placement cavity and delivers the liquefied alkali metal to the vacuum probe.

10. An atomic gas chamber, characterized in that: The atomic gas chamber is prepared by the atomic gas chamber preparation method according to claim 8 or 9.

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