Sensor TCAD and Geant4 coupling modeling method for device single event effect simulation and related device

Abstract

The invention discloses a Sensor TCAD and Geant4 coupling modeling method for device single event effect simulation and a related device, and the method comprises the steps: carrying out the modeling through the Sensor TCAD, and generating a bnd file; reading device structure information in the generated bnd file and obtaining a plurality of vectors; disassembling the plurality of vectors to obtain a plurality of vertex coordinates, and constructing a plurality of triangular patches by using the plurality of vertex coordinates; extracting a plurality of vertex coordinates in the triangular patch, and calculating normal vector information of the triangular patch by using the extracted vertex coordinates; writing vertex coordinates and normal vector information of each triangular patch into an stl file according to an ASCII STL format to obtain an stl file of the semiconductor device model; and through CADmesh, importing the obtained stl file of the semiconductor device model into Geant4, and generating a device single event effect simulation model. According to the method, the device structure information in the Sensor TCAD is accurately imported into the Geant4, so that the simulation model can be ensured to be highly consistent with the actual device structure, and the simulation precision is improved.

Description

Technical Field

[0001] The present invention belongs to the technical field of semiconductor device modeling and simulation, and particularly relates to a Sentaurus TCAD and Geant4 coupled modeling method for device single event effect simulation and related devices. Background Art

[0002] With the development and progress of semiconductor technology, after the feature size of aerospace semiconductor devices is reduced to the nanometer level, the single event effect in space radiation effects seriously affects the reliability of semiconductor devices. At present, the single event effect of devices is mainly studied through ground experiment simulation and numerical simulation; among them, the commonly used software for numerical simulation is TCAD and Geant4. Among them, Sentaurus TCAD is widely used in device physics modeling and performance analysis, but it cannot accurately simulate the charge radial distribution generated by incident particles in semiconductor devices. Geant4 has comprehensive physical and material models and is commonly used to simulate the interaction between particles and matter. It can provide accurate particle trajectories and energy deposition and other information, and can further study the radiation response characteristics of materials, but it cannot calculate the electrical performance of semiconductor devices. Therefore, in order to accurately simulate the single event effect of devices, it is necessary to couple and simulate Geant4 and Sentaurus TCAD, that is, after establishing a semiconductor device in Sentaurus TCAD, import the structure into Geant4 to simulate the transport process of radiation particles in the semiconductor device, obtain an accurate charge density distribution, and finally add the charge density distribution to Sentaurus TCAD for further simulation of the electrical response of the semiconductor device. Among them, converting the TCAD device modeling structure into a structure format recognizable by Geant4 is the most critical step. However, in the prior art, there is a lack of an efficient, convenient and accurate method to directly convert the device structure file generated by Sentaurus TCAD into the STL format recognizable by Geant4 for modeling. Therefore, how to efficiently and accurately convert the device structure file generated by Sentaurus TCAD into a geometric input file recognizable by Geant4 to achieve the precise conversion of the device model between the two has become an urgent technical problem to be solved. Summary of the Invention

[0003] The present invention provides a Sentaurus TCAD and Geant4 coupled modeling method for device single event effect simulation and related devices, so as to solve the technical defect in the prior art that there is a lack of an efficient, convenient and accurate method to directly convert the device structure file generated by Sentaurus TCAD into the STL format recognizable by Geant4 for modeling.

[0004] To achieve the above object, the present invention is implemented by the following technical solutions: In a first aspect, a coupled modeling method of Sentaurus TCAD and Geant4 for device single event effect simulation is provided, including: Model through Sentaurus TCAD to generate a bnd file; Read the device structure information in the generated bnd file and obtain multiple vectors; Decompose the multiple vectors to obtain multiple vertex coordinates, and use the multiple vertex coordinates to construct multiple triangular patches; Extract the multiple vertex coordinates in the triangular patches, and use the extracted multiple vertex coordinates to calculate the normal vector information of the triangular patches; Write the vertex coordinates and the normal vector information of each triangular patch into an stl file in ASCII STL format to obtain the stl file of the semiconductor device model; Through CADmesh, import the stl file of the obtained semiconductor device model into Geant4 to generate a device single event effect simulation model.

[0005] Further, reading the device structure information in the generated bnd file and obtaining multiple vectors specifically includes: The device structure information in the bnd file includes multiple vertices, multiple edges, multiple faces, and multiple cells; Among them, according to the multiple cells, the geometric body is divided into multiple independent geometric bodies, each geometric body is composed of the multiple faces, each face is composed of boundaries, and the vector is the boundary.

[0006] Further, the vector represents the positions of points on the face.

[0007] Further, decomposing the multiple vectors to obtain multiple vertex coordinates, and using the multiple vertex coordinates to construct multiple triangular patches specifically includes: Decompose multiple vectors, where each vector has the vertex coordinates required to form a face, so as to ensure that the three vertex coordinates required for each face can form a triangle, and use the obtained multiple vertex coordinates to construct multiple triangular patches.

[0008] Further, extracting the multiple vertex coordinates in the triangular patches, and using the extracted multiple vertex coordinates to calculate the normal vector information of the triangular patches specifically includes: Extract the multiple vertex coordinates in the triangular patches, where the number of the multiple vertex coordinates is three, and use the three vertex coordinates to calculate the normal vector information of the triangular patches; The normal vector information is used to determine the orientation of the triangular facets, ensuring that the geometric properties of the triangular facets and the physical interactions meet the requirements.

[0009] Further, the vertex coordinates of each triangular facet and the normal vector information are written into an stl file in ASCII STL format to obtain the stl file of the semiconductor device model, which specifically includes: The vertex coordinates and normal vector information of each triangle are written into an stl file in ASCII STL format to obtain the stl file of the semiconductor device model; Among them, all the triangular facets written into the stl file are combined together so that the three-dimensional device model of the stl file of the semiconductor device model is exactly the same as the three-dimensional device model in Sentaurus TCAD.

[0010] Further, before obtaining the bnd file, it further includes: Through the sprocess module in Sentaurus TCAD, process modeling is performed to obtain the device simulation model structure and generate the corresponding bnd file.

[0011] In a second aspect, a computer device is provided, including: a memory, a processor, and a computer program stored on the memory and executable on the processor. The processor executes the computer program to implement the steps of the Sentaurus TCAD and Geant4 coupled modeling method for device single-event effect simulation as described above.

[0012] In a third aspect, a computer-readable storage medium is provided, on which a computer program is stored. When the computer program is executed by a processor, it implements the steps of the Sentaurus TCAD and Geant4 coupled modeling method for device single-event effect simulation as described above.

[0013] In a fourth aspect, a computer program product is provided, including a computer program. When the computer program is executed by a processor, it implements the steps of the Sentaurus TCAD and Geant4 coupled modeling method for device single-event effect simulation as described above.

[0014] Compared with the prior art, the present invention has the following beneficial effects: 1. By accurately importing the device structure information in Sentaurus TCAD into Geant4, it is possible to ensure a high degree of consistency between the simulation model and the actual device structure, thereby improving the simulation accuracy. At the same time, the simulation capabilities of Geant4 can be fully utilized to conduct in-depth research on the performance of the device in a particle radiation environment. This method significantly reduces the time for re-modeling in Geant4 and improves work efficiency. Users only need to perform one-click operation to complete the conversion from the bnd file to the stl file, and Geant4 can directly read the geometric information, greatly simplifying the work process, saving time, and solving the technical defect in the existing technology that there is a lack of an efficient, convenient, and accurate method to directly convert the device structure file generated by Sentaurus TCAD into the STL format recognizable by Geant4 for modeling.

[0015] 2. By carefully reading and parsing the device structure information in the bnd file and accurately extracting vectors, a simulation model highly consistent with the actual device structure can be constructed, which helps to improve the accuracy and reliability of the simulation. Secondly, dividing the geometry into multiple independent units facilitates modular processing and analysis of different parts of the device, contributing to simplifying complex device structures.

[0016] 3. By using vectors to represent the positions of points on the surface, the geometric shape of the device structure can be very accurately described, ensuring a high degree of consistency between the simulation results and the actual situation.

[0017] 4. Using vertex coordinates to directly construct triangular facets can ensure the accuracy of the model, making the model closer to the actual device structure.

[0018] 5. In physical simulation, normal vectors are used to calculate interactions such as collisions and sliding between particles or objects and triangular facets. Accurate normal vector information can ensure that the simulation results of physical interactions are more realistic and reliable.

[0019] 6. By accurately writing the vertex coordinates and normal vector information of each triangular facet into the STL file and verifying the consistency with the original model, it can be ensured that no deformation or distortion occurs during the model conversion process. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] To more clearly illustrate the technical solutions of the embodiments of the present invention, the following will briefly introduce the drawings required for use in the embodiments. It should be understood that the following drawings only show some embodiments of the present invention, and therefore should not be regarded as limiting the scope. For those of ordinary skill in the art, without creative efforts, other related drawings can also be obtained based on these drawings.

[0021] Figure 1Flow chart of the Sentaurus TCAD and Geant4 coupled modeling method for device single event effect simulation provided by the present invention; Figure 2 Schematic diagram of the conversion of the device structure format in the Sentaurus TCAD and Geant4 coupled modeling method for device single event effect simulation provided by the present invention; Figure 3 Schematic diagram of the bnd file format generated by Sentaurus TCAD in the Sentaurus TCAD and Geant4 coupled modeling method for device single event effect simulation provided by the present invention; Figures 4 - 5 Schematic diagram of the stl file format obtained after conversion in the Sentaurus TCAD and Geant4 coupled modeling method for device single event effect simulation provided by the present invention; Figure 6 Schematic diagram of the device model imported into Geant4 in the Sentaurus TCAD and Geant4 coupled modeling method for device single event effect simulation provided by the present invention. Detailed implementation manners

[0022] To make the objectives, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are some but not all of the embodiments of the present invention. Generally, the components of the embodiments of the present invention described and illustrated herein can be arranged and designed in various different configurations.

[0023] Therefore, the following detailed description of the embodiments of the present invention provided in the drawings is not intended to limit the scope of the claimed present invention, but merely represents selected embodiments of the present invention. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention.

[0024] It should be noted that: like reference numerals and letters denote like items in the following drawings. Therefore, once an item is defined in one drawing, it does not need to be further defined and explained in subsequent drawings.

[0025] With the development and progress of semiconductor technology, after the feature size of aerospace semiconductor devices has been reduced to the nanometer scale, the single-event effect in space radiation effects seriously affects the reliability of semiconductor devices. At present, the single-event effect of devices is mainly studied through ground experiment simulation and numerical simulation. Among them, the commonly used software for numerical simulation are TCAD and Geant4. Among them, Sentaurus TCAD is widely used in device physics modeling and performance analysis, but it cannot accurately simulate the radial charge distribution generated by incident particles in semiconductor devices. Geant4 has comprehensive physical and material models and is often used to simulate the interaction between particles and matter. It can provide accurate information such as particle trajectories and energy deposition, and can further study the radiation response characteristics of materials, but it cannot calculate the electrical performance of semiconductor devices. Therefore, in order to accurately simulate the single-event effect of devices, it is necessary to couple and simulate Geant4 and Sentaurus TCAD. That is, after establishing a semiconductor device in Sentaurus TCAD, the structure is imported into Geant4 to simulate the transport process of radiation particles in the semiconductor device, and an accurate charge density distribution is obtained. Finally, the charge density distribution is added to Sentaurus TCAD for further simulation of the electrical response of the semiconductor device. Among them, converting the TCAD device modeling structure into a structure format recognizable by Geant4 is the most critical step. However, in the prior art, there is a lack of an efficient, convenient and accurate method to directly convert the device structure file generated by Sentaurus TCAD into the STL format recognizable by Geant4 for modeling. Therefore, how to efficiently and accurately convert the device structure file generated by Sentaurus TCAD into a geometric input file recognizable by Geant4 to achieve an accurate conversion of the device model between the two has become an urgent technical problem to be solved.

[0026] In order to solve the above technical deficiencies, the inventor provides a Sentaurus TCAD and Geant4 coupled modeling method for simulating the single-event effect of devices and related devices.

[0027] In a first aspect, an embodiment of the present invention provides a Sentaurus TCAD and Geant4 coupled modeling method for simulating the single-event effect of devices, which is applicable to different types of devices. Hereinafter, a 14nm FinFET device is taken as an example for illustration. As Figures 1 - 6 shown, it includes: S101. Generate a bnd file through Sentaurus TCAD modeling. Exemplarily, through the sprocess module in Sentaurus TCAD, process modeling is performed to obtain the simulation model structure of the FinFET device and generate a 14nm_FinFET.bnd file. As Figure 4As shown in the figure; among them, the process flow is provided by Sentaurus TCAD software, and the device parameters are extracted from a 14nm FinFET device. The simulation model structure of the FinFET device obtained by modeling is as Figure 3 shown.

[0028] S102. Read the device structure information in the generated bnd file and obtain multiple vectors; Exemplarily, the bnd file is mainly composed of vertices, edges, faces, elements, and regions, and each part plays an important role in the whole geometric description. Among them, the vertices part contains the coordinate information of all points that make up the geometric body; each vertex is represented in the form of three-dimensional coordinates (x, y, z) and is assigned a unique number for quickly defining the information of the edges. An edge is formed by connecting two vertices, and each edge is assigned a unique number for quickly defining the information of the faces. A face is a planar region enclosed by three edges. In the bnd file, each face is defined by the numbers of the edges it contains, and each face is also assigned a unique number for defining a three-dimensional space region. An element is a three-dimensional space region composed of multiple faces. Each element can be composed of different types of faces, and the element is also assigned a unique number for further defining the geometric region. Regions are usually associated with physical properties or material characteristics. Through the above analysis, the device geometric structure information generated by Sentaurus TCAD can be obtained, and the compositions of vertices, edges, faces, elements, and regions are clarified. After clarifying the meanings represented by vertices, edges, faces, and elements in the bnd file, according to the number of elements, the device structure in the 14nm_FinFET.bnd file is split into corresponding multiple independent geometric units, and each unit can correspond to a set of face, edge, and vertex information through the number.

[0029] Among them, the device structure information in the 14nm FinFET.bnd file includes multiple vertices, multiple edges, multiple faces, and multiple elements. According to the multiple elements, the geometric body is divided into multiple independent geometric bodies. Each of the geometric bodies is composed of the multiple faces, each face is composed of boundaries, and the vector is the boundary. Specifically, the number of vertices is 930, the number of edges is 3343, the number of faces is 2430, and the number of elements is 16. During operation, first extract the face information, traverse each element, and obtain all the faces included in the element through the face numbers included in the element. Among them, each face is composed of multiple edges. Through the edge numbers included in the face, it can be confirmed that these edges can be represented as vectors, and these vectors represent the relative positions of points on the face, and there are multiple vectors.

[0030] S103. Decompose the multiple vectors to obtain multiple vertex coordinates, and use the multiple vertex coordinates to construct multiple triangular patches; Exemplarily, decompose the multiple vectors, where each vector has the vertex coordinates required to form a face, so as to ensure that the three vertex coordinates required for each face can form a triangle, and use the obtained multiple vertex coordinates to construct multiple triangular patches.

[0031] S104. Extract the multiple vertex coordinates in the triangular patches, and use the extracted multiple vertex coordinates to calculate the normal vector information of the triangular patch; Exemplarily, extract the multiple vertex coordinates in the triangular patch. Among them, the number of multiple vertex coordinates is three, and use the three vertex coordinates to calculate the normal vector information of the triangular patch; The normal vector information is used to determine the orientation of the triangular patch to ensure that the geometric properties and physical interactions of the triangular patch meet the requirements. Specifically, by obtaining the three vertices P1(x1, y1, z1), P2(x2, y2, z3), P3(x3, y3, z3) of the triangular patch, calculate the two side vectors of the current triangle through the vertex coordinates: 1 = P2 - P1 2 = P3 - P1 Among them, 1 is the vector from the first vertex to the second vertex, 2 is the vector from the first vertex to the third vertex. Calculate the cross product of these two vectors to obtain the normal vector of the triangular patch, and ensure that when generating the stl file, the geometric properties and physical interactions of the triangular patch meet the requirements. This structure not only accurately describes the surface geometry of the three-dimensional model, but also forms complex geometric bodies through the combination of triangles, which is the basic building unit of the geometric body.

[0032] S105. Write the vertex coordinates and the normal vector information of each triangular patch into an stl file in ASCII STL format to obtain the stl file of the semiconductor device model, as Figure 5 shown; Exemplarily, repeat the above process, traverse all cell information, convert it into triangular patches, write the vertex coordinates and normal vector information of each triangular patch into a file in ASCII STL format, generate an stl file, and combine all triangular patches together to form a three-dimensional model that is exactly the same as the device structure established by Sentaurus TCAD, as Figure 6 shown.

[0033] S106. Through CADmesh, import the obtained stl file of the semiconductor device model into Geant4 to generate a device single-event effect simulation model. Exemplarily, CADmesh is a library for importing CAD data (such as stl files) into Geant4. It allows users to convert CAD models into geometries recognizable by Geant4. In Geant4, add the CADmesh data interface, read the converted stl file of the semiconductor device model for modeling, complete the coupled modeling of Sentaurus TCAD and Geant4, and finally generate a device single-event effect simulation model.

[0034] Through the above high-precision parsing and conversion algorithm, the accurate transmission of geometric information is ensured, ensuring that the device structure in Geant4 is consistent with the design in Sentaurus TCAD, while reducing the learning cost of users. Even users who are not very familiar with Geant4 modeling can quickly get started.

[0035] In a second aspect, a computer device is provided, including: a memory, a processor, and a computer program stored on the memory and executable on the processor. The processor executes the computer program to implement the steps of the Sentaurus TCAD and Geant4 coupled modeling method for device single-event effect simulation as described above.

[0036] In a third aspect, a computer-readable storage medium is provided, on which a computer program is stored. When the computer program is executed by a processor, the steps of the Sentaurus TCAD and Geant4 coupled modeling method for device single-event effect simulation as described above are implemented.

[0037] In a fourth aspect, a computer program product is provided, including a computer program. When the computer program is executed by a processor, the steps of the Sentaurus TCAD and Geant4 coupled modeling method for device single-event effect simulation as described above are implemented.

[0038] The above embodiments are preferred embodiments of the present invention, but the embodiments of the present invention are not limited to the above embodiments. Any other changes, modifications, substitutions, combinations, and simplifications made without departing from the spirit and principle of the present invention shall be equivalent replacement methods and are all included in the protection scope of the present invention.

[0039] Those skilled in the art should understand that the embodiments of the present invention can be provided as methods, systems, or computer program products. Therefore, the present invention can take the form of a complete hardware embodiment, a complete software embodiment, or an embodiment combining software and hardware aspects. Moreover, the present invention can take the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to disk memories, CD-ROMs, optical memories, etc.) containing computer-usable program code.

[0040] The present invention is described with reference to the flowcharts and / or block diagrams of methods, apparatuses (systems), and computer program products according to the embodiments of the present invention. It should be understood that each flow and / or block in the flowchart and / or block diagram, as well as the combination of flows and / or blocks in the flowchart and / or block diagram, can be realized by computer program instructions. These computer program instructions can be provided to the processors of general-purpose computers, special-purpose computers, embedded processors, or other programmable data processing devices to generate a machine, so that the instructions executed by the processors of the computer or other programmable data processing devices generate means for realizing the functions specified in one Figure 1 one flow or multiple flows and / or blocks Figure 1 one block or multiple blocks.

[0041] These computer program instructions can also be stored in a computer-readable memory that can direct a computer or other programmable data processing device to work in a specific manner, so that the instructions stored in the computer-readable memory generate a manufactured article including instruction means, and the instruction means realizes the functions specified in one Figure 1 one flow or multiple flows and / or blocks Figure 1 one block or multiple blocks.

[0042] These computer program instructions can also be loaded onto a computer or other programmable data processing device, so that a series of operation steps are executed on the computer or other programmable device to generate a computer-implemented process. Thus, the instructions executed on the computer or other programmable device provide steps for realizing the functions specified in one Figure 1 one flow or multiple flows and / or blocks Figure 1 one block or multiple blocks.

[0043] The above are only the preferred embodiments of the present invention and are not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and changes. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included within the protection scope of the present invention.

Claims

1. A Sentaurus TCAD and Geant4 coupling modeling method for device single-particle effect simulation, characterized in that: include: Generate bnd file through Sentaurus TCAD modeling; Read the device structure information in the generated bnd file and obtain multiple vectors; Decomposing the multiple vectors to obtain multiple vertex coordinates, and constructing multiple triangular facets using the multiple vertex coordinates; Extracting multiple vertex coordinates from the triangular face patch, and calculating normal vector information of the triangular face patch using the extracted multiple vertex coordinates; Writing the vertex coordinates and the normal vector information of each triangular face into an stl file in ASCII STL format to obtain an stl file of a semiconductor device model; The obtained stl file of the semiconductor device model is imported into Geant4 through CADmesh to generate a device single particle effect simulation model.

2. The Sentaurus TCAD and Geant4 coupled modeling method for device single-particle effect simulation according to claim 1, characterized in that: The device structure information in the generated bnd file is read and multiple vectors are obtained, including: The device structure information in the bnd file includes multiple vertices, multiple edges, multiple faces and multiple units; Wherein, according to the multiple units, the geometric body is divided into multiple independent geometric bodies, each of the geometric bodies is composed of the multiple faces, each face is composed of boundaries, and the vector is the boundary.

3. The Sentaurus TCAD and Geant4 coupled modeling method for device single-particle effect simulation according to claim 2, characterized in that: The vectors represent the positions of points on the surface.

4. The Sentaurus TCAD and Geant4 coupled modeling method for device single-particle effect simulation according to claim 1, characterized in that: Decomposing the multiple vectors to obtain multiple vertex coordinates, and using the multiple vertex coordinates to construct multiple triangular facets, specifically includes: Decompose multiple vectors, where each vector contains the vertex coordinates required to form a face, to ensure that the three vertex coordinates required for each face can form a triangle, and construct multiple triangular face patches using the obtained multiple vertex coordinates.

5. The Sentaurus TCAD and Geant4 coupled modeling method for device single-particle effect simulation according to claim 1, characterized in that: Extracting multiple vertex coordinates in the triangular patch, and calculating normal vector information of the triangular patch using the extracted multiple vertex coordinates, specifically includes: Extracting a plurality of vertex coordinates from the triangular face patch, wherein the number of the plurality of vertex coordinates is three, and calculating normal vector information of the triangular face patch using the three vertex coordinates; The normal vector information is used to determine the orientation of the triangle patch, ensuring that the geometric properties of the triangle patch meet the requirements of physical interaction.

6. The Sentaurus TCAD and Geant4 coupled modeling method for device single-particle effect simulation according to claim 1, characterized in that: The vertex coordinates and the normal vector information of each triangular face are written into the stl file in ASCII STL format to obtain the stl file of the semiconductor device model, which specifically includes: Write the vertex coordinates and normal vector information of each triangle into the stl file in ASCII STL format to obtain the stl file of the semiconductor device model; Wherein, all the triangular facets written into the stl file are combined together so that the device three-dimensional model of the stl file of the semiconductor device model is completely consistent with the device three-dimensional model in the Sentaurus TCAD.

7. The Sentaurus TCAD and Geant4 coupled modeling method for device single-particle effect simulation according to claim 1, characterized in that: Before getting the bnd file, also include: Through the sprocess module in Sentaurus TCAD, process modeling is performed to obtain the device model structure and generate the corresponding bnd file.

8. A computer device comprising: A memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor executes the computer program to implement the steps of the Sentaurus TCAD and Geant4 coupling modeling method for device single particle effect simulation according to any one of claims 1 to 7.

9. A computer-readable storage medium having a computer program stored thereon, characterized in that: When the computer program is executed by a processor, the steps of the Sentaurus TCAD and Geant4 coupling modeling method for device single particle effect simulation described in any one of claims 1 to 7 are implemented.

10. A computer program product, comprising a computer program, characterized in that When the computer program is executed by a processor, the steps of the Sentaurus TCAD and Geant4 coupling modeling method for device single particle effect simulation described in any one of claims 1 to 7 are implemented.

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