Titanium negative plate preparation device for acid etching liquid and use method of titanium negative plate preparation device
By designing a titanium cathode plate preparation device containing a gradient pore-size nanoporous ceramic diaphragm and a steep rising edge pulse DC power supply, the problems of low cathode current efficiency and uneven surface coarsing are solved, and efficient metal deposition and long-life titanium cathode plate are achieved.
Patent Information
- Application Number
- CN202510391976.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-03-31
- Publication Date
- 2025-06-27
AI Technical Summary
The existing titanium cathode plate preparation devices have problems such as low cathode current efficiency, uneven surface coarseness, uneven target distribution and inability to debug, which affects the uniformity of the electrolysis process and product quality.
A titanium cathode plate preparation device including a processing box, a titanium substrate pretreatment unit, anodizing treatment module, a composite conductive layer deposition system, a post-treatment unit and a central control system are designed. The device forms a through-channel oxide layer through the synergistic effect of the gradient pore-size nanoporous ceramic diaphragm and the steep rising pulse DC power supply, thereby improving the cathode current efficiency. At the same time, through the synergy between the sandblasting unit and the acid etching unit, a uniform rough structure is constructed, and a high-quality conductive layer is generated through magnetron sputtering and plasma-enhanced chemical vapor deposition chamber. The central control system realizes closed-loop control of the entire process through the industrial bus.
It significantly improves the cathode current efficiency, reduces the cathode polarization potential, improves the metal deposition rate and service life, and ensures that the pore size and porosity of the surface oxide layer of the titanium cathode plate meet the design requirements, and improves the electrochemical performance and service life in the acid etching liquid.
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Figure CN120210910A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the technical field of electrolytic refining of metals, and specifically to a preparation device for a titanium cathode plate for an acidic etching solution and a use method thereof. Background Technique
[0002] In the technical field of electrolytic refining of metals, acidic etching solutions are widely used. During the electrolysis of acidic etching solutions, there are many problems with commonly used cathode plate materials. Traditional cathode plate materials have obvious limitations, and traditional preparation processes often struggle to ensure the flatness and smoothness of the cathode plate surface. This can lead to uneven current distribution during electrolysis, with local current densities being too large or too small, thereby affecting the uniformity of electrolysis and product quality.
[0003] The defects of existing titanium cathode plate preparation devices are as follows: 1. Patent document US20080248430A1 discloses a method for preparing a field emission cathode plate for nano-carbon materials. However, the diaphragm in the above document only has a basic isolation function and cannot cooperate with a steep rising edge pulsed DC power supply like a gradient diaphragm to form a through-hole oxide layer. It is difficult to reduce the cathode polarization potential and increase the metal deposition rate, and there is a technical problem of being unable to effectively improve the cathode current efficiency; 2. Patent document US3847603A discloses a method for preparing a sintered iron cathode plate for alkaline storage batteries. However, in the method of the sintered iron cathode plate in the above document, there are technical problems that the roughening effect on the surface of the preparation substrate is inconsistent and unstable, affecting subsequent preparation processes; 3. Patent document US09194051B2 discloses a method and device for preparing a mother plate for a permanent cathode for electrolytic treatment. However, the device in the above document has a technical problem that the target material distribution method is a planar distribution or a simple linear distribution, and it is impossible to ensure the sputtering uniformity of each target material; 4. Patent document CN107287625A discloses a clamping strip, a cathode plate using the same, and a preparation method of the cathode plate. However, in the device in the above document, the distances between various components are fixed, and there is a technical problem that the distance cannot be adjusted within a range and cannot be flexibly adjusted according to different deposition requirements. Summary of the Invention
[0004] The purpose of the present invention is to provide a preparation device for a titanium cathode plate for an acidic etching solution and a use method thereof to solve the technical problems raised in the above background technique.
[0005] To achieve the above object, the present invention provides the following technical solution: A device for preparing a titanium cathode plate for an acidic etching solution, comprising a processing box body, a titanium substrate pretreatment unit, an anodic oxidation treatment module, a composite conductive layer deposition system, a post-treatment unit and a central control system. A transmission assembly and a clamping assembly are arranged inside the processing box body. The transmission assembly is used for clamping and adjusting the titanium substrate to be transferred between the titanium substrate pretreatment unit, the anodic oxidation treatment module, the composite conductive layer deposition system and the post-treatment unit along a preset path; The titanium substrate pretreatment unit includes an ultrasonic cleaning tank and a surface roughening treatment mechanism. The anodic oxidation treatment module includes an electrolytic cell, a pulsed DC power supply and an electrolyte circulation system. A cathode area and an anode area are arranged inside the electrolytic cell. A titanium substrate cathode plate fixing frame is arranged inside the cathode area. A platinum-iridium alloy anode plate is arranged inside the anode area. A nano-porous ceramic diaphragm is arranged between the cathode area and the anode area. The pore size distribution of the nano-porous ceramic diaphragm is 50-80 nm at the inlet, 100-150 nm in the middle layer, and 180-200 nm at the outlet layer. The porosity is 40-60%, and the surface is modified by a silane coupling agent with a contact angle ≤ 15°. The pulsed DC power supply outputs a pulsed signal with a pulse width of 0.5-2 ms and a frequency of 500-1500 Hz, and the pulse rising edge slope ≥ 10^6 A / s; The electrolyte circulation system includes a temperature controller, a pH monitor and a fluorine-containing ion exchange membrane, and is used to maintain the electrolyte temperature at 30-40 °C and the pH value at 1.0-3.0. The electrolyte composition is 4-5 mol / L hydrochloric acid, 15-25 mol / L sulfuric acid, and 0.8-1.5 g / L sodium dodecyl sulfonate; The composite conductive layer deposition system is integrated with a magnetron sputtering target group and a plasma-enhanced chemical vapor deposition chamber, and is used to deposit a platinum nanoparticle layer through the magnetron sputtering target group, and then generate a nitrogen-doped carbon coating layer through the plasma-enhanced chemical vapor deposition chamber. The post-treatment unit includes a heat treatment furnace and an electrochemical passivation tank. The passivation solution is an ethylene glycol solution containing 0.1-0.3 mol / L citric acid. The central control system is used to respectively connect the actuators and sensors of each unit through an industrial bus for closed-loop control of process parameters. The pore size of the surface oxide layer of the obtained titanium cathode plate is 50-200 nm, and the porosity is 30-50%.
[0006] Preferably, the surface roughening treatment mechanism includes a sandblasting unit, an acid etching unit, a three-dimensional motion platform, and an infrared drying module. The sandblasting unit is driven by compressed air at 0.6 - 0.8 MPa to drive silicon carbide abrasives with a particle size of 80 - 120 μm. The acid etching unit is equipped with a circulating system of a mixed solution of hydrofluoric acid (5 - 15 vol%) and nitric acid (10 - 30 vol%). The temperature of the acid solution is maintained at 25 - 40 °C, and the treatment time is 30 - 180 s. The infrared drying module is arranged between the sandblasting unit and the acid etching unit, with a drying temperature of 80 - 120 °C and a time of 30 - 60 s; The three-dimensional motion platform is integrated with a vision positioning system. The vision positioning system includes a high-resolution CCD camera and an image processing module. When the detected surface Sa value deviation exceeds ±0.3 μm, the air pressure parameters of the sandblasting unit are dynamically adjusted through the PID algorithm, and the adjustment rate is 5 - 10 kPa / s.
[0007] Preferably, the magnetron sputtering target group includes a first palladium target with a purity ≥ 99.95%, a second iridium target with a purity ≥ 99.9%, and a third ruthenium target with a purity ≥ 99.9%. Each target is annularly distributed at 120°, and is equipped with an independent radio frequency power supply. The working air pressure of the magnetron sputtering target group is 0.3 - 0.6 Pa, and the power density of the first palladium target is 2.5 - 3.5 W / cm², the power density of the second iridium target is 1.8 - 2.8 W / cm², the power density of the third ruthenium target is 1.2 - 2.0 W / cm², and the substrate bias voltage is adjustable from -50 V to -150 V.
[0008] Preferably, the plasma-enhanced chemical vapor deposition chamber includes a double-layer plasma confinement ring and a gas distributor. The gas distributor includes four independent gas paths. The four independent gas paths are provided with ultrasonic atomization mixers, and the atomization particle size ≤ 5 μm. The adjustable range of the spacing of the plasma-enhanced chemical vapor deposition chamber is 5 - 20 mm. The four independent gas paths are used to respectively introduce ethylene (10 - 30 sccm), nitrogen (50 - 100 sccm), argon (200 - 400 sccm), and tetramethylsilane (5 - 15 sccm). The plasma power density is 0.8 - 1.5 W / cm2, and the deposition pressure is 80 - 120 Pa.
[0009] Preferably, the central control system includes a machine learning module. The machine learning module trains a bidirectional LSTM model with an attention mechanism by fusing the voltage fluctuation characteristic spectrum in the electrolytic cell and the plasma emission spectrum data in the plasma-enhanced chemical vapor deposition chamber, and real-time optimizes the pulse duty cycle (35 - 65%) in the anodizing stage and the target power ratio in the composite deposition stage.
[0010] Preferably, the mixed liquid circulation system is equipped with an on-line conductivity monitor and an automatic liquid replenishment unit. When the conductivity changes by more than ±5%, start to replenish hydrofluoric acid or nitric acid solution, and the acid concentration fluctuation is ≤±0.3 vol% through a fuzzy PID controller.
[0011] Preferably, the silane coupling agent of the nano-porous ceramic diaphragm arranged between the cathode area and the anode area of the electrolytic cell is γ-aminopropyltriethoxysilane, and the surface hydroxyl density after modification treatment is ≤5 groups / nm².
[0012] Preferably, the transmission assembly includes a set of belt conveyors and several robotic arms. The belt conveyors are respectively installed on the front and back of the processing box body, and the bases of the robotic arms are fixed to the inner wall of the processing box body.
[0013] Preferably, the working steps of the device for preparing a titanium cathode plate using the acidic etching solution are as follows: S1. The titanium substrate is fed into the titanium substrate pretreatment unit in the processing box body. After preliminary cleaning in the ultrasonic cleaning tank, it is subjected to sandblasting and acid etching treatment through the surface roughening treatment mechanism to enhance the surface roughness and improve the adhesion of subsequent treatment. S2. The pretreated titanium substrate is transferred to the anodizing treatment module by the transmission assembly and subjected to anodizing treatment in the electrolytic cell. The electrolytic cell is provided with a cathode area and an anode area, separated by a nano-porous ceramic diaphragm to ensure the stability and efficiency of the electrolysis process. The pulsed DC power supply outputs pulsed signals with specific parameters to promote the uniform growth of the oxide layer. At the same time, the electrolyte circulation system maintains the temperature and pH value of the electrolyte within the optimal range to ensure the quality of the oxide layer. S3. The titanium substrate enters the composite conductive layer deposition system, deposits a platinum nanoparticle layer through the magnetron sputtering target group, and then generates a nitrogen-doped carbon coating layer in the plasma-enhanced chemical vapor deposition chamber to form a composite conductive layer with excellent conductivity and corrosion resistance. S4. The titanium substrate is fed into the post-treatment unit for heat treatment and electrochemical passivation treatment to further improve its performance. The heat treatment furnace is used to eliminate internal stress and improve the stability of the material, and the electrochemical passivation tank uses an ethylene glycol solution containing citric acid for passivation treatment to enhance the surface corrosion resistance. S5. During the whole preparation process, the central control system connects the actuators and sensors of each unit through the industrial bus to realize the closed-loop control of process parameters, and ensure that the key indexes such as the pore diameter and porosity of the surface oxide layer of the prepared titanium cathode plate meet the design requirements.
[0014] Preferably, the following steps are further included in the S1: S11. The sandblasting unit uses silicon carbide abrasive with specific pressure and particle size, while the acid etching unit uses a mixed solution of hydrofluoric acid and nitric acid for precise etching. The three-dimensional motion platform integrates a vision positioning system to ensure the uniformity and consistency of the processing process.
[0015] Compared with the prior art, the beneficial effects of the present invention are as follows: 1. Through the synergistic effect of the gradient pore size nanoporous ceramic diaphragm and the steep rising edge pulsed DC power supply, the present invention can achieve significant optimization in the electrolytic metal production or refining. Its gradient diaphragm structure intercepts metal impurities through the inlet layer, accelerates the H+ transmission through the middle layer, and inhibits the anodic oxygen evolution side reaction through the outlet layer, achieving the function of improving the cathode current efficiency. Combined with the composite electrolyte and steep pulse regulation, the formed through-hole oxide layer can reduce the cathode polarization potential and increase the metal deposition rate. The deposited platinum nanoparticle layer and nitrogen-doped carbon coating layer have the effect of improving the service life. The central control system realizes full-process closed-loop control based on the industrial bus, and finally obtains a titanium cathode plate surface oxide layer with a pore diameter of 50 - 200 nm and a porosity of 30 - 50%, achieving the improvement of the electrochemical performance and service life in the acidic etching solution. 2. Through the synergistic effect of the sandblasting unit and the acid etching unit, combined with the setting of the infrared drying module, a uniform rough structure is constructed on the surface of the titanium substrate, which is beneficial to improving the bonding strength of the oxide layer. Then, the high-resolution CCD camera of the three-dimensional motion platform is integrated to monitor the surface morphology of the titanium substrate in real time. When the Sa value deviation exceeds ±0.3 μm, the air pressure parameters of the sandblasting unit are dynamically adjusted through the PID algorithm, and the adjustment rate is 5 - 10 kPa / s, realizing the real-time precise control of the sandblasting roughening process, ensuring the consistency and stability of the roughening effect of the titanium substrate surface, and further improving the quality and reliability of the subsequent preparation process. 3. The magnetron sputtering target group of the present invention uses high-purity targets, and each target is annularly distributed at 120° and equipped with an independent radio frequency power supply. This layout and independent power supply method can ensure the uniformity and independence of sputtering of each target. The working pressure is controlled at 0.3 - 0.6 Pa, and appropriate power density ranges (2.5 - 3.5 W / cm², 1.8 - 2.8 W / cm², 1.2 - 2.0 W / cm²) are set for the first palladium target, the second iridium target, and the third ruthenium target respectively. The substrate bias voltage can be adjusted from -50 V to -150 V, which can precisely control the sputtering process, so that the sputtered metal particles are evenly deposited on the substrate to form a high-quality platinum nanoparticle layer. 4. The present invention can effectively confine the plasma through a double-layer plasma confinement ring, improving the deposition uniformity and stability. An ultrasonic atomization mixer is set with four independent gas paths, and the atomization particle size is ≤5 μm, which can fully mix the gases evenly and ensure the uniformity of the reaction gases. The adjustable range of the spacing is 5 - 20 mm, which can be flexibly adjusted according to different deposition requirements to optimize the deposition effect. The gas distributor precisely introduces ethylene, nitrogen, argon, and tetramethylsilane through four independent gas paths respectively. The plasma power density is 0.8 - 1.5 W / cm², and the deposition pressure is 80 - 120 Pa, which helps to generate a high-quality nitrogen-doped carbon coating layer, thereby enhancing the performance of the titanium cathode plate. BRIEF DESCRIPTION OF THE DRAWINGS
[0016] Figure 1 is a schematic diagram of the overall process structure of the present invention; Figure 2 is a schematic diagram of the electrolytic cell process structure of the present invention; Figure 3 is a schematic diagram of the surface roughening treatment mechanism process structure of the present invention; Figure 4 is a schematic diagram of the plasma enhanced chemical vapor deposition chamber process structure of the present invention; Figure 5 is a schematic diagram of the processing box structure of the present invention; Figure 6 is a schematic diagram of the overall sectional structure of the present invention; Figure 7 of the present invention Figure 6 schematic diagram of the structure at A in; Figure 8 is a schematic diagram of the double-layer plasma confinement ring structure of the present invention; Figure 9 is a schematic diagram of the working process of the present invention.
[0017] In the figure: 1. Processing box body; 2. Titanium substrate pretreatment unit; 3. Anodic oxidation treatment module; 4. Composite conductive layer deposition system; 5. Post-treatment unit; 6. Central control system; 7. Ultrasonic cleaning tank; 8. Surface roughening treatment mechanism; 9. Electrolytic cell; 10. Pulse DC power supply; 11. Electrolyte circulation system; 12. Titanium substrate cathode plate fixing rack; 13. Platinum-iridium alloy anode plate; 14. Nanoporous ceramic diaphragm; 15. Temperature controller; 16. pH monitor; 17. Fluoride ion exchange membrane; 18. Magnetron sputtering target group; 19. Plasma enhanced chemical vapor deposition chamber; 20. Heat treatment furnace; 21. Electrochemical passivation tank; 22. Sandblasting unit; 23. Acid etching unit; 24. Three-dimensional motion platform; 25. Mixed liquid circulation system; 26. Visual positioning system; 27. High-resolution CCD camera; 28. Image processing module; 29. First palladium target; 30. Second iridium target; 31. Third ruthenium target; 32. Double-layer plasma confinement ring; 33. Gas distributor; 34. Machine learning module; 35. Online conductivity monitor; 36. Automatic liquid replenishment unit; 37. Infrared drying module; 38. Belt conveyor; 39. Robot arm; 40. Ultrasonic atomization mixer; 41. Four independent gas paths; 42. Independent RF power supply. Detailed implementation manners
[0018] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.
[0019] In the description of the present invention, it should be noted that the orientation or positional relationship indicated by the terms "upper", "lower", "inner", "outer", "front end", "rear end", "both ends", "one end", "the other end", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus cannot be construed as a limitation of the present invention. In addition, the terms "first" and "second" are only used for descriptive purposes and cannot be construed as indicating or implying relative importance.
[0020] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, terms such as "installation", "provided with", "connection", etc. should be understood in a broad sense. For example, "connection" can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be directly connected or indirectly connected through an intermediate medium, and it can be the communication inside two components. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.
[0021] Example 1: Please refer to Figure 1 , Figure 2 , Figure 5 and Figure 6 , an embodiment provided by the present invention: a preparation device for a titanium cathode plate for an acidic etching solution, including a processing box body 1, a titanium substrate pretreatment unit 2, an anodic oxidation treatment module 3, a composite conductive layer deposition system 4, a post-treatment unit 5 and a central control system 6. A transmission component and a clamping component are arranged inside the processing box body 1. The transmission component is used for clamping and adjusting the transfer of the titanium substrate between the titanium substrate pretreatment unit 2, the anodic oxidation treatment module 3, the composite conductive layer deposition system 4 and the post-treatment unit 5 along a preset path; The titanium substrate pretreatment unit 2 includes an ultrasonic cleaning tank 7 and a surface roughening treatment mechanism 8. The anodic oxidation treatment module 3 includes an electrolytic cell 9, a pulsed DC power supply 10 and an electrolyte circulation system 11. A cathode area and an anode area are arranged inside the electrolytic cell 9. A titanium substrate cathode plate fixing frame 12 is arranged inside the cathode area, and a platinum-iridium alloy anode plate 13 is arranged inside the anode area. A nano-porous ceramic diaphragm 14 is arranged between the cathode area and the anode area. The pore size distribution of the nano-porous ceramic diaphragm 14 is 50 - 80 nm at the inlet, 100 - 150 nm in the middle layer, and 180 - 200 nm at the outlet layer. The porosity is 40 - 60%, and the surface is modified by a silane coupling agent with a contact angle ≤ 15°. The pulsed DC power supply 10 outputs a pulsed signal with a pulse width of 0.5 - 2 ms and a frequency of 500 - 1500 Hz, and the pulse rising edge slope ≥ 10^6 A / s; The electrolyte circulation system 11 includes a temperature controller 15, a pH monitor 16 and a fluoride ion exchange membrane 17, and is used to maintain the electrolyte temperature at 30 - 40 °C and the pH value at 1.0 - 3.0. The electrolyte composition is 4 - 5 mol / L hydrochloric acid, 15 - 25 mol / L sulfuric acid, and 0.8 - 1.5 g / L sodium dodecyl sulfate; The composite conductive layer deposition system 4 is integrated with a magnetron sputtering target group 18 and a plasma enhanced chemical vapor deposition chamber 19, and is used to deposit a platinum nanoparticle layer through the magnetron sputtering target group 18, and then generate a nitrogen-doped carbon coating layer through the plasma enhanced chemical vapor deposition chamber 19. The post-treatment unit 5 includes a heat treatment furnace 20 and an electrochemical passivation tank 21. The passivation solution is an ethylene glycol solution containing 0.1 - 0.3 mol / L citric acid. The central control system 6 is used to respectively connect the actuators and sensors of each unit through an industrial bus for closed-loop control of process parameters. The pore diameter of the oxide layer on the surface of the titanium cathode plate obtained is 50 - 200 nm, and the porosity is 30 - 50%. Furthermore, through the synergistic effect of the gradient pore diameter nanoporous ceramic diaphragm 14 and the steep rising edge pulsed DC power supply 10, significant optimization can be achieved in the electrolytic metal production or refining. Its gradient diaphragm structure intercepts metal impurities through the inlet layer, accelerates the H+ transmission through the middle layer, and inhibits the anodic oxygen evolution side reaction through the outlet layer, achieving the function of improving the cathode current efficiency. With the cooperation of the composite electrolyte and steep pulse regulation, the formed through-hole oxide layer can reduce the cathode polarization potential and increase the metal deposition rate. The deposited platinum nanoparticle layer and nitrogen-doped carbon coating layer have the effect of improving the service life. The central control system 6 realizes full-process closed-loop control based on the industrial bus, and finally obtains an oxide layer on the surface of the titanium cathode plate with a pore diameter of 50 - 200 nm and a porosity of 30 - 50%, achieving the improvement of the electrochemical performance and service life in the acidic etching solution.
[0022] Example 2: Please refer to Figure 3 and Figure 6 , an embodiment provided by the present invention: The surface roughening treatment mechanism 8 includes a sandblasting unit 22, an acid etching unit 23, a three-dimensional motion platform 24, and an infrared drying module 37. The sandblasting unit 22 is driven by 0.6 - 0.8 MPa compressed air to drive silicon carbide abrasives with a particle size of 80 - 120 μm. The acid etching unit 23 is equipped with a circulating system 25 of a mixed solution of hydrofluoric acid (5 - 15 vol%) and nitric acid (10 - 30 vol%). The temperature of the acid solution is maintained at 25 - 40 °C, and the treatment time is 30 - 180 s. The infrared drying module 37 is arranged between the sandblasting unit 22 and the acid etching unit 23, with a drying temperature of 80 - 120 °C and a time of 30 - 60 s; The three-dimensional motion platform 24 is integrated with a visual positioning system 26. The visual positioning system 26 includes a high-resolution CCD camera 27 and an image processing module 28. When it is detected that the deviation of the surface Sa value exceeds ±0.3 μm, the air pressure parameters of the sandblasting unit 22 are dynamically adjusted through the PID algorithm, and the adjustment rate is 5 - 10 kPa / s; Furthermore, through the synergistic effect of the sandblasting unit 22 and the acid etching unit 23, combined with the setting of the infrared drying module 37, a uniform rough structure is constructed on the surface of the titanium substrate, which is beneficial to improving the bonding strength of the oxide layer. Then, the high-resolution CCD camera 27 of the three-dimensional motion platform 24 is integrated to real-time monitor the surface topography of the titanium substrate. When the deviation of the Sa value exceeds ±0.3 μm, the air pressure parameter of the sandblasting unit 22 is dynamically adjusted through the PID algorithm, and the adjustment rate is 5-10 kPa / s, realizing the real-time and precise control of the sandblasting roughening process, ensuring the consistency and stability of the roughening effect of the titanium substrate surface, and further improving the quality and reliability of the subsequent preparation process.
[0023] Example 3: Please refer to Figure 3 、 Figure 6 and Figure 7 , an embodiment provided by the present invention: The magnetron sputtering target group 18 includes a first palladium target 29 with a purity of ≥99.95%, a second iridium target 30 with a purity of ≥99.9%, and a third ruthenium target 31 with a purity of ≥99.9%. Each target is annularly distributed at 120°, and is equipped with an independent radio frequency power supply 42. The working air pressure of the magnetron sputtering target group 18 is 0.3-0.6 Pa, and the power density of the first palladium target 29 is 2.5-3.5 W / cm², the power density of the second iridium target 30 is 1.8-2.8 W / cm², the power density of the third ruthenium target 31 is 1.2-2.0 W / cm², and the substrate bias voltage is adjustable from -50 V to -150 V; Furthermore, by using high-purity targets (the purity of the first palladium target 29 is ≥99.95%, the purity of the second iridium target 30 is ≥99.9%, and the purity of the third ruthenium target 31 is ≥99.9%) in the magnetron sputtering target group 18, and each target is annularly distributed at 120° and equipped with an independent radio frequency power supply 42, this layout and independent power supply method can ensure the uniformity and independence of sputtering of each target. The working air pressure is controlled at 0.3-0.6 Pa, and appropriate power density ranges (2.5-3.5 W / cm², 1.8-2.8 W / cm², 1.2-2.0 W / cm²) are set for the first palladium target 29, the second iridium target 30, and the third ruthenium target 31 respectively. The substrate bias voltage can be adjusted from -50 V to -150 V, which can precisely control the sputtering process, make the sputtered metal particles uniformly deposited on the substrate, and form a high-quality platinum nanoparticle layer, laying a foundation for the subsequent preparation of a titanium cathode plate with excellent performance.
[0024] Example 4: Please refer to Figure 4 、 Figure 6 、 Figure 7 and Figure 8, an embodiment provided by the present invention: The plasma-enhanced chemical vapor deposition chamber 19 includes a double-layer plasma confinement ring 32 and a gas distributor 33. The gas distributor 33 includes four independent gas paths 41. The four independent gas paths 41 are provided with ultrasonic atomization mixers 40, and the atomization particle size is ≤5 μm. The adjustable range of the spacing of the plasma-enhanced chemical vapor deposition chamber 19 is 5-20 mm. The four independent gas paths 41 are used to respectively introduce ethylene (10-30 sccm), nitrogen (50-100 sccm), argon (200-400 sccm), and tetramethylsilane (5-15 sccm). The plasma power density is 0.8-1.5 W / cm2, and the deposition pressure is 80-120 Pa; Furthermore, through the double-layer plasma confinement ring 32, the plasma can be effectively confined, improving the deposition uniformity and stability. The four independent gas paths 41 are provided with ultrasonic atomization mixers 40, and the atomization particle size is ≤5 μm, which can make the gases fully mixed evenly, ensuring the uniformity of the reaction gases. The adjustable range of the spacing is 5-20 mm, which can be flexibly adjusted according to different deposition requirements to optimize the deposition effect. The gas distributor 33 accurately introduces ethylene, nitrogen, argon, and tetramethylsilane respectively through the four independent gas paths 41. The plasma power density is 0.8-1.5 W / cm², and the deposition pressure is 80-120 Pa, which helps to generate a high-quality nitrogen-doped carbon coating, thereby improving the performance of the titanium cathode plate.
[0025] Example 5: Please refer to Figure 1 and Figure 5 , an embodiment provided by the present invention: The central control system 6 includes a machine learning module 34. The machine learning module 34 trains a bidirectional LSTM model with an attention mechanism by fusing the voltage fluctuation characteristic spectrum in the electrolytic cell 9 and the plasma emission spectrum data in the plasma-enhanced chemical vapor deposition chamber 19, and real-time optimizes the pulse duty ratio (35-65%) in the anodizing stage and the target power ratio in the composite deposition stage; Furthermore, the central control system 6 realizes the intelligent control of the electrolytic cell 9 and the plasma-enhanced chemical vapor deposition chamber 19 by integrating the machine learning module 34. This module trains a bidirectional LSTM model with an attention mechanism by fusing the voltage fluctuation characteristic spectrum in the electrolytic cell 9 and the plasma emission spectrum data in the deposition chamber. This model can real-time optimize the pulse duty ratio (35-65%) in the anodizing stage and the target power ratio in the composite deposition stage, thereby significantly improving the stability and efficiency of the processing process and ensuring the consistency and superiority of the product quality.
[0026] Example 6: Please refer to Figure 3 and Figure 6, an embodiment provided by the present invention: the mixed liquid circulation system 25 is equipped with an online conductivity monitor 35 and an automatic liquid replenishing unit 36. When the conductivity changes by more than ±5%, the hydrofluoric acid or nitric acid solution is added, and the acid concentration fluctuation is ≤±0.3vol% through the fuzzy PID controller; Furthermore, the mixed liquid circulation system 25 is equipped with an online conductivity monitor 35 and an automatic liquid replenishment unit 36 to achieve precise control of the acid concentration. When the conductivity changes by more than ±5%, the system can quickly start replenishing hydrofluoric acid or nitric acid solution, and accurately adjust the replenishment amount through the fuzzy PID controller, thereby effectively controlling the acid concentration fluctuation within the range of ≤±0.3vol%. This design significantly improves the stability and consistency of the acid etching treatment, ensures the reliability and repeatability of the treatment effect, and reduces the treatment quality problems and resource waste caused by acid concentration fluctuations.
[0027] Example 7: Please refer to Figure 2 , an embodiment provided by the present invention: the silane coupling agent of the nanoporous ceramic diaphragm 14 disposed between the cathode region and the anode region of the electrolytic cell 9 is γ-aminopropyltriethoxysilane, and the surface hydroxyl density after modification is ≤5 groups / nm²; Furthermore, after modification with γ-aminopropyltriethoxysilane, the silane coupling agent forms a dense covering layer on the surface of the nanoporous ceramic diaphragm 14, effectively preventing the aggregation of nanomaterials due to surface chemical activity, thereby improving the dispersion and stability of the diaphragm. Secondly, the modification treatment enhances the interfacial bonding strength between the diaphragm and the electrolyte, which helps to improve the overall performance of the electrolytic cell 9, including conductivity, mechanical strength and electrochemical stability.
[0028] Example 8: Please refer to Figure 1 , Figure 5 and Figure 6 , an embodiment provided by the present invention: the transmission assembly includes a group of belt conveyors 38 and a plurality of mechanical arms 39, and the belt conveyors 38 are respectively installed on the front and back of the processing box 1, and the base of the mechanical arm 39 is fixed to the inner wall of the processing box 1; Furthermore, by reasonably configuring a set of belt conveyors 38 and several robotic arms 39 through the transmission assembly, the automation and efficiency of the processing process are significantly improved. The belt conveyors 38 are respectively installed on the front and back of the processing box 1, realizing the rapid and continuous transportation of materials or workpieces, effectively shortening the processing cycle. At the same time, the base of the robotic arm 39 is fixed to the inner wall of the processing box 1, ensuring the stability and accuracy of the robotic arm 39 during operation, and enabling it to flexibly perform various grasping, handling, and positioning tasks. This layout not only optimizes space utilization but also realizes the seamless connection of the processing process through the collaborative operation of the belt conveyor 38 and the robotic arm 39, greatly improving production efficiency and processing quality.
[0029] Example 9: Please refer to Figure 9 , an embodiment provided by the present invention: The working steps of the titanium cathode plate preparation device for the acidic etching solution are as follows: S1. The titanium substrate is first fed into the titanium substrate pretreatment unit 2 in the processing box 1. In the ultrasonic cleaning tank 7, the titanium substrate is ultrasonically cleaned to remove surface oil stains and impurities. The titanium substrate enters the surface roughening treatment mechanism 8 and undergoes silicon carbide abrasive sandblasting treatment by the sandblasting unit 22 to enhance the surface roughness. In the acid etching unit 23, the titanium substrate is corroded by a mixed solution of hydrofluoric acid and nitric acid to further roughen the surface. The infrared drying module 37 dries the treated titanium substrate to ensure that there is no moisture residue on the surface. The three-dimensional motion platform 24 is integrated with a vision positioning system 26 to real-time monitor and adjust the surface roughness of the titanium substrate to ensure the consistency of the treatment effect; S2. The pretreated titanium substrate is transferred to the anodic oxidation treatment module 3 by the transmission assembly. In the electrolytic cell 9, the titanium substrate serves as the cathode and is placed opposite to the platinum-iridium alloy anode plate 13 in the anode region, separated by a nanoporous ceramic diaphragm 14 in the middle. The pulsed DC power supply 10 outputs pulsed signals with specific parameters to promote the uniform growth of the oxide layer on the surface of the titanium substrate. The electrolyte circulation system 11 maintains the temperature and pH value of the electrolyte within the optimal range to ensure the quality of the oxide layer. The pore size distribution and porosity design of the nanoporous ceramic diaphragm 14, as well as the surface silane coupling agent modification treatment, effectively improve the separation performance and stability of the diaphragm; S3. The titanium substrate after oxidation treatment enters the composite conductive layer deposition system 4. In the magnetron sputtering target group 18, a platinum nanoparticle layer is deposited by sputtering the first palladium target 29, the second iridium target 30, and the third ruthenium target 31. The titanium substrate enters the plasma-enhanced chemical vapor deposition chamber 19, and a nitrogen-doped carbon coating layer is formed through the reaction of gases such as ethylene, nitrogen, argon, and tetramethylsilane. The design of the double-layer plasma confinement ring 32 and the gas distributor 33, as well as the use of the ultrasonic atomization mixer 40, ensure the uniformity and quality of the deposited layer; S4. The titanium substrate after deposition treatment is sent into the post-treatment unit 5. In the heat treatment furnace 20, the titanium substrate undergoes heat treatment to eliminate internal stress and improve the stability of the material. In the electrochemical passivation tank 21, the titanium substrate is passivated by an ethylene glycol solution containing citric acid to enhance the surface corrosion resistance. S5. The central control system 6 is connected to the actuators and sensors of each unit through an industrial bus to collect and process data in real time. The machine learning module 34 trains the model by fusing the voltage fluctuation characteristic spectrum in the electrolytic cell 9 and the plasma emission spectrum data in the plasma-enhanced chemical vapor deposition chamber 19, and optimizes the pulse duty ratio in the anodizing stage and the target power ratio in the composite deposition stage in real time. The mixed liquid circulation system 25 is equipped with an online conductivity monitor 35 and an automatic liquid replenishment unit 36 to ensure the stability of the acid concentration.
[0030] The following steps are also included in S1: S11. The sandblasting unit 22 uses silicon carbide abrasives with a specific pressure and particle size, while the acid etching unit 23 uses a mixed solution of hydrofluoric acid and nitric acid for precise etching. The three-dimensional motion platform 24 integrates a vision positioning system 26 to ensure the uniformity and consistency of the treatment process.
[0031] Working principle: Through the synergistic effect of the gradient-aperture nanoporous ceramic diaphragm 14 and the steep-rising-edge pulsed DC power supply 10, significant optimization can be achieved in the electrolytic metal production or refining. Its gradient diaphragm structure intercepts metal impurities through the inlet layer, accelerates the H⁺ transport through the middle layer, and inhibits the anodic oxygen evolution side reaction through the outlet layer, achieving the function of improving the cathode current efficiency. Combined with the composite electrolyte and steep pulse regulation, the formed through-hole oxide layer can reduce the cathode polarization potential and increase the metal deposition rate. The deposited platinum nanoparticle layer and nitrogen-doped carbon coating layer have the effect of improving the service life. The central control system 6 realizes full-process closed-loop control based on the industrial bus. Finally, the pore diameter of the oxide layer on the surface of the titanium cathode plate is 50 - 200 nm, and the porosity is 30 - 50%, achieving the improvement of the electrochemical performance and service life in the acidic etching solution. Through the synergistic effect of the sandblasting unit 22 and the acid etching unit 23, combined with the setting of the infrared drying module 37, a uniform rough structure is constructed on the surface of the titanium substrate, which is beneficial to improving the bonding strength of the oxide layer. Then, the high-resolution CCD camera 27 of the three-dimensional motion platform 24 is integrated to monitor the surface morphology of the titanium substrate in real time. When the deviation of the Sa value exceeds ±0.3 μm, the air pressure parameters of the sandblasting unit 22 are dynamically adjusted through the PID algorithm, and the adjustment rate is 5 - 10 kPa / s, realizing the real-time and precise control of the sandblasting roughening process, ensuring the consistency and stability of the roughening effect of the titanium substrate surface, and further improving the quality and reliability of the subsequent preparation process. The magnetron sputtering target group 18 uses high-purity targets (the purity of the first palladium target 29 is ≥99.95%, the purity of the second iridium target 30 is ≥99.9%, and the purity of the third ruthenium target 31 is ≥99.9%). Each target is distributed in a 120° ring and is equipped with an independent radio frequency power supply 42. This layout and independent power supply method can ensure the uniformity and independence of sputtering of each target. The working pressure is controlled at 0.3 - 0.6 Pa, and appropriate power density ranges (2.5 - 3.5 W / cm², 1.8 - 2.8 W / cm², 1.2 - 2.0 W / cm²) are set for the first palladium target 29, the second iridium target 30, and the third ruthenium target 31 respectively. The substrate bias voltage can be adjusted from -50 V to -150 V, which can precisely control the sputtering process, enabling the sputtered metal particles to be uniformly deposited on the substrate, forming a high-quality platinum nanoparticle layer, laying a foundation for the subsequent preparation of high-performance titanium cathode plates. Through the double-layer plasma confinement ring 32, the plasma can be effectively confined, improving the deposition uniformity and stability. The four-way independent gas path 41 is provided with an ultrasonic atomization mixer 40, and the atomization particle size ≤5 μm, which can make the gas fully mixed evenly, ensuring the uniformity of the reaction gas. The adjustable range of the spacing is 5 - 20 mm, which can be flexibly adjusted according to different deposition requirements to optimize the deposition effect. The gas distributor 33 precisely introduces ethylene, nitrogen, argon, and tetramethylsilane through the four-way independent gas path 41 respectively, and the plasma power density is 0.8 - 1.5 W / cm², the deposition pressure is 80 - 120 Pa, which helps to generate a high-quality nitrogen-doped carbon coating layer, thereby improving the performance of the titanium cathode plate. The central control system 6 realizes the intelligent control of the electrolytic cell 9 and the plasma-enhanced chemical vapor deposition chamber 19 by integrating the machine learning module 34. This module trains a bidirectional LSTM model with an attention mechanism by fusing the voltage fluctuation characteristic spectrum in the electrolytic cell 9 and the plasma emission spectrum data in the deposition chamber. This model can real-time optimize the pulse duty cycle (35 - 65%) in the anodic oxidation stage and the target power ratio in the composite deposition stage, thus significantly improving the stability and efficiency of the processing process, ensuring the consistency and superiority of product quality. The mixed liquid circulation system 25 realizes the precise control of the acid concentration by equipping an online conductivity monitor 35 and an automatic liquid replenishment unit 36. When the conductivity changes by more than ±5%, the system can quickly start to add hydrofluoric acid or nitric acid solution and precisely adjust the liquid replenishment volume through a fuzzy PID controller, thereby effectively controlling the acid concentration fluctuation within the range of ≤±0.3 vol%. This design significantly improves the stability and consistency of the acid etching process, ensures the reliability and repeatability of the processing effect, and at the same time reduces the processing quality problems and resource waste caused by acid concentration fluctuations. After the modification treatment with γ-aminopropyltriethoxysilane, a dense coating layer is formed on the surface of the nanoporous ceramic diaphragm 14 by the silane coupling agent, effectively preventing the aggregation of nanomaterials due to surface chemical activity, thereby improving the dispersibility and stability of the diaphragm. Secondly, the modification treatment enhances the interfacial bonding strength between the diaphragm and the electrolyte, which helps to improve the overall performance of the electrolytic cell 9, including conductivity, mechanical strength, and electrochemical stability. The transmission component significantly improves the automation and efficiency of the processing process by reasonably configuring a group of belt conveyors 38 and several robotic arms 39. The belt conveyors 38 are respectively installed on the front and back of the processing box 1, realizing the rapid and continuous transportation of materials or workpieces, effectively shortening the processing cycle. At the same time, the base of the robotic arm 39 is fixed on the inner wall of the processing box 1, ensuring the stability and accuracy of the robotic arm 39 during operation, and it can flexibly perform various grasping, handling, and positioning tasks. This layout not only optimizes the space utilization but also realizes the seamless connection of the processing process through the coordinated operation of the belt conveyor 38 and the robotic arm 39, greatly improving the production efficiency and processing quality.
[0032] It is obvious to those skilled in the art that the present invention is not limited to the details of the above-described exemplary embodiments, and that the present invention can be implemented in other specific forms without departing from the spirit or essential characteristics of the present invention. Therefore, in any respect, the embodiments should be regarded as exemplary and non-limiting. The scope of the present invention is defined by the appended claims rather than the above description. Thus, all changes that fall within the meaning and scope of the equivalent elements of the claims are intended to be embraced within the present invention. Any reference signs in the claims should not be construed as limiting the claims involved.
Claims
1. A device for preparing a titanium cathode plate for an acidic etching solution, comprising a processing box (1), a titanium substrate pretreatment unit (2), an anodic oxidation treatment module (3), a composite conductive layer deposition system (4), a post-treatment unit (5) and a central control system (6), characterized in that: A transmission component and a clamping component are arranged inside the processing box (1), and the transmission component is used to clamp and adjust the titanium substrate to be transferred along a preset path between the titanium substrate pre-treatment unit (2), the anodizing treatment module (3), the composite conductive layer deposition system (4) and the post-treatment unit (5); The titanium substrate pretreatment unit (2) comprises an ultrasonic cleaning tank (7) and a surface roughening treatment mechanism (8), and the anodizing treatment module (3) comprises an electrolytic tank (9), a pulsed DC power supply (10) and an electrolyte circulation system (11), wherein a cathode region and an anode region are arranged inside the electrolytic tank (9), a titanium substrate cathode plate fixing frame (12) is arranged inside the cathode region, and a platinum-iridium alloy anode plate (13) is arranged inside the anode region, and a nanoporous ceramic diaphragm (14) is arranged between the cathode region and the anode region, wherein the pore size distribution of the nanoporous ceramic diaphragm (14) is 50-80 nm at the inlet, 100-150 nm at the middle layer, and 180-200 nm at the outlet layer, and the porosity is 40-60%, and the surface is modified by a silane coupling agent, and the contact angle is ≤15°, and the pulsed DC power supply (10) outputs a pulse signal with a pulse width of 0.5-2 ms and a frequency of 500-1500 Hz, and a pulse rising edge slope of ≥10^6 A / s; The electrolyte circulation system (11) comprises a temperature controller (15), a pH monitor (16) and a fluorine-containing ion exchange membrane (17), and is used to maintain an electrolyte temperature of 30-40° C. and a pH value of 1.0-3.
0. The electrolyte composition comprises 4-5 mol / L hydrochloric acid, 15-25 mol / L sulfuric acid, and 0.8-1.5 g / L sodium dodecyl sulfate; The composite conductive layer deposition system (4) is integrated with a magnetron sputtering target group (18) and a plasma enhanced chemical vapor deposition chamber (19), and is used to deposit a platinum nanoparticle layer through the magnetron sputtering target group (18), and then generate a nitrogen-doped carbon coating layer through the plasma enhanced chemical vapor deposition chamber (19). The post-processing unit (5) comprises a heat treatment furnace (20) and an electrochemical passivation tank (21), and the passivation solution is an ethylene glycol solution containing 0.1-0.3 mol / L citric acid. The central control system (6) is used to connect the actuators and sensors of each unit respectively through an industrial bus to perform closed-loop control of process parameters, and the pore size of the oxide layer on the surface of the titanium cathode plate obtained is 50-200 nm and the porosity is 30-50%.
2. The device for preparing a titanium cathode plate for an acidic etching solution according to claim 1, characterized in that: The surface roughening treatment mechanism (8) comprises a sandblasting unit (22), an acid etching unit (23), a three-dimensional motion platform (24) and an infrared drying module (37), wherein the sandblasting unit (22) uses 0.6-0.8 MPa compressed air to drive silicon carbide abrasive with a particle size of 80-120 μm, the acid etching unit (23) is equipped with a hydrofluoric acid (5-15 vol%) and nitric acid (10-30 vol%) mixed liquid circulation system (25), the acid liquid temperature is maintained at 25-40° C., and the treatment time is 30-180 s, and the infrared drying module (37) is arranged between the sandblasting unit (22) and the acid etching unit (23), and the drying temperature is 80-120° C. and the treatment time is 30-60 s; The three-dimensional motion platform (24) is integrated with a visual positioning system (26), and the visual positioning system (26) includes a high-resolution CCD camera (27) and an image processing module (28). When it is detected that the surface Sa value deviation exceeds ±0.3 μm, the air pressure parameters of the sandblasting unit (22) are dynamically adjusted through a PID algorithm, and the adjustment rate is 5-10 kPa / s.
3. The device for preparing a titanium cathode plate for an acidic etching solution according to claim 1, characterized in that: The magnetron sputtering target group (18) includes a first palladium target (29) with a purity of ≥99.95%, a second iridium target (30) with a purity of ≥99.9%, and a third ruthenium target (31) with a purity of ≥99.9%. Each target is distributed in a 120° ring shape and is equipped with an independent radio frequency power supply (42). The working gas pressure of the magnetron sputtering target group (18) is 0.3-0.6 Pa, and the power density of the first palladium target (29) is 2.5-3.5 W / cm², the power density of the second iridium target (30) is 1.8-2.8 W / cm², and the power density of the third ruthenium target (31) is 1.2-2.0 W / cm². The substrate bias voltage is adjustable from -50 V to -150 V.
4. The device for preparing a titanium cathode plate for an acidic etching solution according to claim 1, characterized in that: The plasma enhanced chemical vapor deposition chamber (19) comprises a double-layer plasma confinement ring (32) and a gas distributor (33). The gas distributor (33) comprises four independent gas paths (41). The four independent gas paths (41) are provided with an ultrasonic atomization mixer (40). The atomization particle size is ≤5 μm. The adjustable spacing of the plasma enhanced chemical vapor deposition chamber (19) is within a range of 5-20 mm. The four independent gas paths (41) are used to respectively introduce ethylene (10-30 sccm), nitrogen (50-100 sccm), argon (200-400 sccm) and tetramethylsilane (5-15 sccm). The plasma power density is 0.8-1.5 W / cm2 and the deposition pressure is 80-120 Pa.
5. The device for preparing a titanium cathode plate for an acidic etching solution according to claim 1, characterized in that: The central control system (6) includes a machine learning module (34), which trains a bidirectional LSTM model with an attention mechanism by fusing the voltage fluctuation characteristic spectrum in the electrolytic cell (9) and the plasma emission spectrum data in the plasma enhanced chemical vapor deposition chamber (19), thereby optimizing the pulse duty cycle (35-65%) in the anodization stage and the target power ratio in the composite deposition stage in real time.
6. The device for preparing a titanium cathode plate for an acidic etching solution according to claim 2, characterized in that: The mixed liquid circulation system (25) is equipped with an online conductivity monitor (35) and an automatic liquid replenishing unit (36). When the conductivity changes by more than ±5%, the addition of hydrofluoric acid or nitric acid solution is started, and the acid concentration fluctuation is achieved by a fuzzy PID controller of ≤±0.3 vol%.
7. The device for preparing a titanium cathode plate for an acidic etching solution according to claim 1, characterized in that: The silane coupling agent of the nanoporous ceramic diaphragm (14) arranged between the cathode region and the anode region of the electrolytic cell (9) is γ-aminopropyltriethoxysilane, and the surface hydroxyl density after modification is ≤5 groups / nm².
8. The device for preparing a titanium cathode plate for an acidic etching solution according to claim 1, characterized in that: The transmission assembly comprises a group of belt conveyors (38) and a plurality of mechanical arms (39), wherein the belt conveyors (38) are respectively installed on the front and back sides of the processing box (1), and the bases of the mechanical arms (39) are fixed to the inner wall of the processing box (1).
9. The method for using the device for preparing a titanium cathode plate for acidic etching solution according to claim 6, characterized in that: The working steps of the device for preparing the titanium cathode plate for acidic etching solution are as follows: S1, the titanium substrate is sent to the titanium substrate pretreatment unit (2) in the processing box (1), and after preliminary cleaning in the ultrasonic cleaning tank (7), it is sandblasted and acid-etched by the surface roughening treatment mechanism (8) to enhance the surface roughness and improve the adhesion of subsequent treatment; S2. The pretreated titanium substrate is transferred to the anodizing treatment module (3) by the transmission component and anodized in the electrolytic cell (9). The electrolytic cell (9) is provided with a cathode region and an anode region, which are separated by a nanoporous ceramic diaphragm (14) to ensure the stability and efficiency of the electrolysis process. The pulsed DC power supply (10) outputs a pulse signal with specific parameters to promote the uniform growth of the oxide layer. At the same time, the electrolyte circulation system (11) maintains the temperature and pH value of the electrolyte within the optimal range to ensure the quality of the oxide layer. S3, the titanium substrate enters the composite conductive layer deposition system (4), a platinum nanoparticle layer is deposited through a magnetron sputtering target group (18), and then a nitrogen-doped carbon coating layer is generated through a plasma enhanced chemical vapor deposition chamber (19), thereby forming a composite conductive layer with excellent conductivity and corrosion resistance; S4, the titanium substrate is sent to the post-treatment unit (5) for heat treatment and electrochemical passivation treatment to further improve its performance. The heat treatment furnace (20) is used to eliminate internal stress and improve the stability of the material. The electrochemical passivation tank (21) uses ethylene glycol solution containing citric acid to perform passivation treatment to enhance the corrosion resistance of the surface. S5. During the entire preparation process, the central control system (6) connects the actuators and sensors of each unit through the industrial bus to achieve closed-loop control of process parameters, ensuring that the key indicators of pore size and porosity of the oxide layer on the surface of the prepared titanium cathode plate meet the design requirements.
10. The method for using the device for preparing a titanium cathode plate for acidic etching solution according to claim 9, characterized in that: The S1 also includes the following steps: S11, the sandblasting unit (22) uses silicon carbide abrasives with specific pressure and particle size, while the acid etching unit (23) uses a mixture of hydrofluoric acid and nitric acid for precise etching. The three-dimensional motion platform (24) is integrated with a visual positioning system (26) to ensure the uniformity and consistency of the processing process.
Citation Information
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