Microwave annealing equipment
The microwave annealing equipment uses microwave heating technology to generate internal friction heat, which solves the problems of low heating efficiency and uneven heating of existing rapid thermal annealing equipment, and achieves rapid and uniform heating and low energy consumption annealing effects.
Patent Information
- Application Number
- CN202510258335.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-03-05
- Publication Date
- 2025-06-27
AI Technical Summary
The existing rapid thermal annealing equipment has low heating efficiency, long heating time, and uneven heating, which affects the annealing effect of semiconductor workpieces.
Using microwave annealing equipment, the internal dipole molecules of the semiconductor workpiece are reciprocated at high frequency through microwave heating technology, generating internal friction heat, thereby achieving rapid and uniform heating.
The heating speed is improved and the uniformity of heating is achieved. The heating purpose is only required to achieve one-thousandth or one-thousandth of the traditional heating method, and the semiconductor workpiece is effectively annealed at a lower temperature.
Smart Images
Figure CN120221452A_ABST
Abstract
Description
Technical Field
[0001] The present disclosure relates to the technical field of semiconductor equipment, and particularly to a microwave annealing equipment. Background Art
[0002] After the semiconductor ion implantation process, annealing treatment is required to repair implantation damage, activate doped atoms, and restore the mobility of electrons and holes. In related technologies, rapid thermal annealing equipment usually transfers heat from the outside to the material according to the principles of heat conduction, convection or radiation; the radiation energy used mainly includes halogen lamps. However, this heating method has low efficiency and long heating time. Summary of the Invention
[0003] The present disclosure provides a microwave annealing equipment with fast and uniform heating speed.
[0004] According to an aspect of the present disclosure, there is provided a microwave annealing equipment, including: a chamber base body, the internal space of which is used to accommodate semiconductor workpieces; a microwave device, disposed adjacent to the chamber base body and used for annealing the semiconductor workpieces; a rotary clamping device, at least partially located in the chamber base body and used for supporting the semiconductor workpieces and driving the semiconductor workpieces to rotate; wherein, the rotary clamping device includes: a driving member, a belt transmission assembly and a supporting assembly, the driving member is connected to the belt transmission assembly, the belt transmission assembly is connected to the supporting assembly, the supporting assembly is used for supporting a plurality of semiconductor components, and the plurality of semiconductor components are spaced along the axial direction of the chamber base body; the driving member is used to drive the supporting assembly and the semiconductor workpieces to rotate through the belt transmission assembly; a temperature detection device, installed in the chamber base body and used for detecting the temperature of the semiconductor workpieces; a control device, communicatively connected to the microwave device, the driving member and the temperature detection device respectively.
[0005] In some embodiments, the rotary clamping device further includes: a fixed flange and a rotary flange; the fixed flange is fixedly connected to the chamber base body, the rotary flange is fixedly connected to the supporting assembly, and the rotary flange and the supporting assembly are located on one side of the fixed flange facing the internal space of the chamber base body.
[0006] In some embodiments, the belt transmission assembly includes: a driving wheel, a fixed shaft, a conveyor belt, a driven wheel and a rotating shaft, the driving wheel is fixedly connected to the output end of the driving member, the conveyor belt is respectively tensioned on the driving wheel and the driven wheel; the driving wheel is connected to the fixed flange through the fixed shaft; the driven wheel is fixedly connected to the rotating shaft, and the rotating shaft passes through the fixed flange and is fixedly connected to the rotary flange; wherein, the rotating shaft is rotatably and sealingly fitted with the fixed flange through a magnetic fluid seal.
[0007] In some embodiments, a first cooling channel is provided in the fixed flange. The input port of the first cooling channel is connected to an input pipeline for supplying a cooling medium, and the output port of the first cooling channel is connected to a recovery pipeline for recovering the cooling medium.
[0008] In some embodiments, the device further includes: a microwave shielding device disposed between the rotating flange and the fixed flange for preventing the microwave generated by the microwave device from leaking.
[0009] In some embodiments, the support assembly includes: a bottom support and support columns. The bottom support is fixedly connected to the rotating flange in the rotating clamping device, and the bottom support is also fixedly connected to the support columns. The cross-sectional area of the bottom support is larger than the cross-sectional area of the support columns; multiple placement grooves are provided in the support columns, and the multiple placement grooves are spaced along the axial direction of the chamber base. The notch of the placement groove is located on the surface of the support column facing the central axis of the chamber base.
[0010] In some embodiments, there are at least three support columns, and the three support columns are spaced along a preset curve; the number and distribution of the bottom supports are adapted to the support columns; the placement groove has a first groove wall opposite to the notch; the placement groove also has two second groove walls connected to the first groove wall, and the two second groove walls are spaced and opposite along the axial direction of the chamber base; the distance between the first groove walls of the placement grooves of at least two adjacent support columns is greater than the radius of the semiconductor workpiece, providing space for placing and removing the semiconductor workpiece.
[0011] In some embodiments, carriers are respectively provided in the placement groove near the top end of the support column and the placement groove near the bottom end of the support column, and the carrier is made of a material with a resistivity greater than or equal to a threshold value.
[0012] In some embodiments, the microwave device includes: at least one microwave source and a microwave connecting member connecting the microwave source to the chamber base; wherein, when there are multiple microwave sources, at least two of the microwave sources are symmetrically distributed with respect to a preset symmetry line; the preset symmetry line intersects and is perpendicular to the central axis of the chamber base; the frequency of the microwave source is 2.45 GHz or 5.8 GHz.
[0013] In some embodiments, the temperature detection device includes at least two non-contact temperature sensors, and the highest temperature in the measurement temperature range of one of the temperature sensors is less than or equal to the lowest temperature in the measurement temperature range of the other temperature sensor.
[0014] The microwave annealing equipment provided by the embodiments of the present disclosure can utilize microwave heating technology to generate "internal frictional heat" through the high-frequency reciprocating motion of dipole molecules inside the heated semiconductor workpiece, thereby increasing the temperature of the semiconductor workpiece. Without the process of heat conduction, the inside and outside of the semiconductor workpiece can be heated and heated simultaneously, with a fast and uniform heating speed.
[0015] It should be understood that the content described in this part is not intended to identify the key or important features of the embodiments of the present disclosure, nor is it used to limit the scope of the present disclosure. Other features of the present disclosure will become easily understood through the following description. BRIEF DESCRIPTION OF THE DRAWINGS
[0016] The drawings are used to better understand the solution and do not constitute a limitation to the present disclosure. Among them:
[0017] Figure 1 is a schematic structural diagram of a microwave annealing equipment according to an embodiment of the present disclosure;
[0018] Figure 2 is a schematic structural diagram of a rotary clamping device according to an embodiment of the present disclosure;
[0019] Figure 3 is a schematic structural diagram of a rotary clamping device according to another embodiment of the present disclosure.
[0020] Description of the reference numerals: 100 - chamber base; 101 - gas source cabinet; 102 - intake device; 103 - exhaust device; 104 - chamber door; 105 - window; 106 - pressure detection component; 107 - cooling device; 200 - microwave device; 201 - microwave source; 202 - microwave connection component; 300 - rotary clamping device; 301 - fixed flange; 301a - input pipeline; 302 - rotary flange; 303 - driving component; 304 - driving wheel; 305 - fixed shaft; 306 - conveyor belt; 307 - driven wheel; 308 - rotating shaft; 309 - microwave shielding device; 310 - bottom support; 311 - support column; 311a - placement groove; 312 - carrier; 400 - temperature detection device; 500 - control device; 600 - semiconductor workpiece. DETAILED DESCRIPTION OF THE EMBODIMENTS
[0021] The following describes exemplary embodiments of the present disclosure in conjunction with the drawings. Various details of the embodiments of the present disclosure are included to facilitate understanding, and they should be considered merely exemplary. Therefore, those of ordinary skill in the art should recognize that various changes and modifications can be made to the embodiments described herein without departing from the scope and spirit of the present disclosure. Similarly, for clarity and conciseness, the description of well-known functions and structures is omitted below.
[0022] In the related art, a rapid thermal annealing device transfers heat from the outside to the material according to the principles of heat conduction, convection or radiation; the radiation energy currently used is mainly halogen lamps. This heating method has low efficiency and long heating time; during the heating process, heat is always transferred from the surface to the inside to heat the wafer, and there is inevitably a temperature gradient in the wafer, so the heated wafer is uneven, resulting in local overheating and high thermal budget; moreover, as the process size continues to shrink, the above-mentioned rapid thermal annealing device is prone to excessive dopant diffusion when realizing impurity activation and lattice repair at a higher temperature, affecting performance.
[0023] To overcome the above problems, this embodiment provides a microwave annealing device, which adopts microwave heating technology. Through the high-frequency reciprocating motion of dipole molecules inside the heated semiconductor workpiece, "internal frictional heat" is generated to raise the temperature of the semiconductor workpiece. Without the heat conduction process, the inside and outside of the semiconductor workpiece can be heated and heated simultaneously, with a fast and uniform heating speed. Only a fraction or a few tenths of the energy consumption of the traditional heating method is required to achieve the heating purpose. Moreover, due to the special excitation during the microwave heating process, using microwave annealing can anneal the semiconductor workpiece at a lower temperature, effectively suppress the phenomenon of impurity redistribution, and can also effectively activate doped atoms and repair lattice damage to achieve the purpose of the traditional annealing process.
[0024] The following takes the drawings as an example to illustrate the structure, function and implementation process of the microwave annealing device provided in this embodiment.
[0025] Figure 1 It is a schematic structural diagram of a microwave annealing device according to an embodiment of the present disclosure, and specifically can be a schematic diagram of the relative positions of at least some components of the microwave annealing device in the orthographic projection on a preset horizontal plane. Figure 2 It is a schematic structural diagram of a rotary clamping device according to an embodiment of the present disclosure, and specifically can be a side view of the rotary clamping device.
[0026] Please refer to Figure 1 and Figure 2, this embodiment provides a microwave annealing device, including: a chamber base body 100, the internal space of the chamber base body 100 is used to accommodate a semiconductor workpiece 600; a microwave device 200, arranged adjacent to the chamber base body 100, for annealing the semiconductor workpiece 600; a rotary clamping device 300, at least partially located in the chamber base body 100, for supporting the semiconductor workpiece 600 and driving the semiconductor workpiece 600 to rotate; wherein, the rotary clamping device 300 includes: a driving member 303, a belt transmission assembly and a support assembly, the driving member 303 is connected to the belt transmission assembly, the belt transmission assembly is connected to the support assembly, the support assembly is used to support a plurality of semiconductor components, and the plurality of semiconductor components are distributed at intervals along the axial direction of the chamber base body 100; the driving member 303 can drive the support assembly and the semiconductor workpiece 600 to rotate through the belt transmission assembly; a temperature detection device 400, for detecting the temperature of the semiconductor workpiece 600; a control device 500, communicatively connected to the microwave device 200, the driving member 303 and the temperature detection device 400 respectively.
[0027] The chamber base body 100 can be a hollow columnar body in the shape of a prism or a cylinder. The internal space of the chamber base body 100 is used to accommodate a semiconductor workpiece 600 (such as a wafer) and other components.
[0028] The chamber base body 100 is connected with an air inlet device 102 and an exhaust device 103. The air inlet device 102 can include an air inlet pipeline, and the air inlet pipeline can be connected to an air source cabinet 101; the air source cabinet 101 is used to provide gases such as N2, O2, Ar, H2, NH3, etc., and the gases provided by the air source cabinet 101 enter the chamber base body 100 through the air inlet pipeline. Optionally, a first flow regulating valve is arranged in the air inlet pipeline, and the first flow regulating valve can be communicatively connected to the control device 500, so that the control device 500 can control the opening degree of the first flow regulating valve according to the process requirements, thereby controlling the amount of gas entering the chamber base body 100. The exhaust device 103 can include an exhaust pipeline, and the exhaust pipeline is used to guide the gas discharged from the chamber base body 100 to a corresponding collection component; optionally, a second flow regulating valve can be arranged in the exhaust pipeline, and the second flow regulating valve can be communicatively connected to the control device 500, so that the control device 500 can control the opening degree of the second flow regulating valve according to the process requirements. Among them, the control device 500 can include a processor and / or a controller, and the number of the controller and the processor can be set according to actual needs. In this example, during the annealing process, according to actual requirements, the inside of the chamber base body 100 can be in a negative pressure state or the like.
[0029] Optionally, the air inlet device 102 and the exhaust device 103 can be respectively located on opposite sides of the chamber base body 100, and the air inlet device 102 and the exhaust device 103 can also be located on adjacent sides of the chamber base body 100. The relative positions of the air inlet device 102 and the exhaust device 103 can be set according to actual needs.
[0030] Optionally, a pressure detection component 106 is further provided in the chamber base 100; the pressure detection component 106 is used to detect the pressure in the internal space of the chamber base 100 and is communicatively connected to the control device 500.
[0031] A microwave device 200 is disposed near the chamber base 100 for annealing the semiconductor workpiece 600. Compared with the air inlet device 102, the microwave device 200 can be disposed closer to the air outlet device.
[0032] Exemplarily, the microwave device 200 includes: at least one microwave source 201 and a microwave connection member 202 connecting the microwave source 201 to the chamber base 100. Wherein, the microwave source 201 is a device capable of providing microwaves, and the specific structure thereof is not limited in this embodiment as long as its corresponding function can be realized. Optionally, the microwave source 201 can extend along the axial direction of the chamber base 100 to facilitate the heating uniformity of multiple semiconductor workpieces 600. In the horizontal direction, the distance between the microwave source 201 and the chamber base 100 or the semiconductor workpiece 600 can also be set according to actual needs to ensure the best heating effect; for example, the distance between the microwave source 201 and the semiconductor workpiece 600 can be greater than or equal to the distance of two wavelengths to improve problems such as uneven field strength distribution at close range.
[0033] The microwave connection member 202 is used to detachably connect the microwave source 201 to the chamber base 100, facilitating the maintenance of the microwave source 201. Optionally, the microwave connection member 202 can be a hollow columnar seat body, one end of which is detachably connected to the microwave source 201 and the other end is fixedly connected to the chamber base 100; or one end of which is fixedly connected to the microwave source 201 and the other end is detachably connected to the chamber base 100; in addition, the material of the microwave connection member 202 can be reasonably set, or a functional layer can be provided on the inner surface of the microwave connection member 202 so that the microwave connection member 202 can introduce more microwaves into the chamber base 100.
[0034] In some examples, both the microwave source 201 and the microwave connection member 202 are one.
[0035] In some other examples, when there are multiple microwave sources 201, at least two microwave sources 201 are symmetrically distributed with respect to a preset symmetry line; the preset symmetry line intersects and is perpendicular to the central axis of the chamber base 100. Optionally, along the axial direction of the chamber base 100, the microwave source 201 may have a preset size, or multiple microwave sources 201 are evenly distributed. For example, there are two microwave sources 201 and two microwave connectors 202 respectively, and the microwave sources 201 are respectively connected to the chamber base 100 through the corresponding microwave connectors 202; the two microwave sources 201 may be located on the same side of the chamber base 100, and the two microwave sources 201 are symmetrically arranged; the semiconductor workpiece 600 is equally divided into two parts, and the two microwave sources 201 respectively correspond to the two parts of the semiconductor workpiece 600, so as to benefit the uniformity of the annealing effect.
[0036] In other examples, the two microwave sources 201 may be distributed along the axial direction of the chamber base 100; or, the microwave sources 201 may be respectively located on the adjacent sides of the chamber base 100, or the microwave sources 201 may be located on the opposite sides of the chamber base 100. When the number of microwave sources 201 is larger, their distribution may be similar to the above. It can be understood that the specific number and distribution of the microwave sources 201 can be set according to actual needs.
[0037] Optionally, the frequency of the microwave source 201 is 2.45 GHz or 5.8 GHz, and the heating temperature range can be from 150 °C to 700 °C. In this way, the thermal diffusion effect can be avoided, the low-temperature annealing effect can be achieved, the thermal budget is low, and the service life of the microwave annealing equipment is long and the maintenance cost is low.
[0038] The rotary clamping device 300 can be used to support one or more semiconductor workpieces 600, and can drive the semiconductor workpiece 600 to rotate or keep the semiconductor workpiece 600 stationary according to actual needs.
[0039] In some examples, the rotary clamping device 300 includes: a driving member 303 and a belt drive assembly. The driving member 303 is communicatively connected to the control device 500, and the output end of the driving member 303 is connected to the belt drive assembly. Under the control instruction of the control device 500, the driving member 303 can drive the belt drive assembly to move so as to transmit the rotational motion to the semiconductor workpiece 600.
[0040] The driving member 303 may include a motor. The belt drive assembly may include: a driving pulley 304, a fixed shaft 305, a conveyor belt 306, a driven pulley 307, and a rotating shaft 308. The driving pulley 304 is fixedly connected to the output end of the driving member 303. The conveyor belt 306 is tensioned around the driving pulley 304 and the driven pulley 307 respectively. Among them, the driving pulley 304 may be fixed on the output shaft of the driving member 303. The driven pulley 307 may be fixed on the rotating shaft 308, and the rotating shaft 308 may be connected to the support assembly for supporting the semiconductor workpiece 600.
[0041] In this example, by using the belt drive assembly to achieve the transmission of rotational motion, the lubrication requirements during the transmission can be reduced, and the maintenance cost can be lowered; the transmission motion runs smoothly and has low noise; the belt drive assembly can adapt to the transmission scenario with a relatively large center distance, improving the installation flexibility; the belt drive assembly has a buffering and vibration absorption effect, which can prevent weak components from being damaged; the belt drive assembly has an overload protection function. When encountering overload, the conveyor belt 306 will slip on the pulley.
[0042] In other examples, a gear drive assembly or the like can also be used to transmit motion, or the driving member can be directly fixedly connected to the rotating shaft.
[0043] The rotary support device may further include a support assembly for supporting a plurality of semiconductor components, and the plurality of semiconductor components are distributed at intervals along the axial direction of the chamber base 100; the driving member 303 can drive the support assembly and the semiconductor workpiece 600 to rotate through the belt drive assembly. Through the above settings, this embodiment can anneal a plurality of semiconductor workpieces 600 simultaneously, thereby improving the efficiency of the annealing process and further saving energy.
[0044] The microwave annealing equipment provided in this embodiment, by setting the microwave device 200, can utilize microwave heating technology. Through the high-frequency reciprocating motion of the dipole molecules inside the heated semiconductor workpiece 600, "internal frictional heat" is generated to raise the temperature of the semiconductor workpiece. Without the heat conduction process, the inside and outside of the semiconductor workpiece 600 can be heated and heated up simultaneously, with a fast and uniform heating speed. Moreover, using microwave annealing can anneal the semiconductor workpiece 600 at a relatively low temperature, effectively suppressing the impurity redistribution phenomenon, and can also effectively activate the doped atoms and repair the lattice damage to achieve the purpose of the traditional annealing process. In addition, by setting the rotary clamping device 300, the rotary clamping device 300 can support a plurality of semiconductor workpieces 600 simultaneously and drive the semiconductor workpieces 600 to rotate, thereby further facilitating the heating uniformity and improving the heating efficiency.
[0045] In some embodiments, the rotary clamping device 300 further includes a fixed flange 301 and a rotary flange 302. The fixed flange 301 is fixedly connected to the chamber base 100. The rotary flange 302 is fixedly connected to the support assembly. The rotary flange 302 and the support assembly are located on one side of the fixed flange 301 facing the inner space of the chamber base 100.
[0046] Exemplarily, a lower opening is provided at the lower part of the chamber base 100, and the fixed flange 301 can cover the lower opening. Wherein, the shape of the fixed flange 301 can be adapted to the shape of the chamber base 100. For example, when the chamber base 100 is cylindrical, the fixed flange 301 can also be circular. In other examples, the fixed flange 301 can also be located in the chamber base 100, and the lower surface of the fixed flange 301 can be connected to the bottom wall of the chamber base 100.
[0047] The driving wheel 304 in the belt transmission assembly is connected to the fixed flange 301 through a fixed shaft 305. The output shaft of the driving member 303 can extend to be connected to the fixed flange 301. At this time, the output shaft can serve as the fixed shaft 305. Alternatively, the output end of the driving member 303 is connected to the fixed shaft 305 through a shaft connecting member such as a coupling, and the fixed shaft 305 is connected to the fixed flange 301. Wherein, when the fixed shaft 305 can perform a rotational movement with the driving wheel 304, the fixed shaft 305 can be connected to the fixed flange 301 through a bearing. In other examples, the driving wheel 304 is fixedly connected to the output shaft of the driving member 303, the output shaft of the driving member 303 is connected to the fixed shaft 305 through a bearing, and the fixed shaft 305 is fixedly connected to the fixed flange 301. Through the above arrangement, the installation reliability of the driving member 303 can be improved, and the reliability of the transmission process can also be improved.
[0048] The fixed flange 301 is provided with a shaft hole, and the rotating shaft in the belt transmission assembly passes through the shaft hole, so that the rotating shaft 308 can rotate relative to the fixed flange 301. Wherein, in order to improve the sealing reliability of the inner space of the chamber base 100, the rotating shaft 308 is also in sealing cooperation with the fixed flange 301.
[0049] In some examples, a magnetorheological fluid seal is provided between the rotating shaft 308 and the shaft hole. The magnetorheological fluid seal may include non-magnetic seats, bearings, magnetic poles, permanent magnets, magnetic shafts, magnetorheological fluids, and other components; under the action of a uniform and stable magnetic field, the magnetorheological fluid fills a set space to establish multiple "O-ring seals", thereby achieving a sealing effect; each stage of the seal can generally withstand a pressure difference greater than 0.15 to 0.2 atmospheres, and the total pressure bearing is the sum of the pressure differences of each stage, generally designed to be 2.5 atmospheres, and the overall pressure resistance increases with the increase in the number of stages of the liquid "O"-shaped ring. Among them, the magnetorheological fluid is a colloidal solution; the magnetorheological fluid has the characteristics of good stability, no agglomeration, no precipitation, no decomposition, high saturation magnetization intensity, large initial magnetic permeability, low viscosity and low saturated vapor pressure.
[0050] In other examples, at least one bearing may also be provided between the rotating shaft 308 and the hole wall of the shaft hole, and at least one of the bearings has its own sealing structure.
[0051] The upper part of the rotating shaft 308 passes through the fixed flange 301 and is fixedly connected to the rotating flange 302. A support assembly is fixed on the upper surface of the rotating flange 302, so that the rotating shaft 308 can drive the rotating flange 302 and the support assembly to rotate synchronously. Among them, the rotating shaft 308 can be fixedly connected to the rotating flange 302 by welding, bolt connection, key connection, bonding, clamping or other means.
[0052] In some examples, a first cooling channel is provided in the fixed flange 301. The input port of the first cooling channel is connected to the input pipeline 301a for supplying the cooling medium, and the output port of the first cooling channel is connected to the recovery pipeline for recovering the cooling medium. Among them, the cooling medium may include coolant, cooling gas, etc.
[0053] Optionally, the first cooling channel is bent. For example, the first cooling channel includes a plurality of first sub-channels arranged side by side, and the water outlet end of one of the first sub-channels is communicated with the water inlet end of the adjacent first sub-channel through a second sub-channel. In this way, the first cooling channel can provide a longer flow path, so that the cooling medium can fully exchange heat with the fixed flange 301. Among them, the first cooling channel is arranged to avoid the area where the shaft hole is located.
[0054] Among them, in order to reduce the processing difficulty of the fixed flange 301, the fixed flange 301 may adopt a double-layer plate structure, and grooves are respectively provided on the opposite surfaces of the double-layer plates, so that when the double-layer plates are connected, the grooves of the double-layer plates enclose the first cooling channel.
[0055] In other examples, the first cooling channel may include a plurality of sub-channels extending along a preset direction, and the plurality of sub-channels are arranged side by side; a flow dividing block is correspondingly arranged at one end of each sub-channel, and the flow dividing block can be connected to the input pipeline 301a; a flow collecting block is arranged at the other end of each sub-channel, and the flow collecting block can be connected to the recovery pipeline.
[0056] It can be understood that the specific structure and shape of the first cooling channel can be set according to actual needs, as long as its corresponding functions can be realized.
[0057] In some embodiments, the microwave annealing device further includes: a microwave shielding device 309, which is arranged between the rotating flange 302 and the fixed flange 301 and is used to prevent the microwave generated by the microwave device 200 from leaking downward.
[0058] Exemplarily, the microwave shielding device 309 can be fixedly connected to the fixed flange 301, and the microwave shielding device 309 is provided with an avoidance hole for avoiding the rotating shaft 308. A preset gap can be provided between the upper surface of the microwave shielding device 309 and the lower surface of the rotating flange 302, so as to prevent friction between the microwave shielding device 309 and the rotating shaft 308 and the rotating flange 302.
[0059] The microwave shielding device 309 can be made of materials with good electrical conductivity such as metals like copper, aluminum, iron, etc. When the microwave propagates downward and encounters the microwave shielding device 309, reflection will occur on the surface of the microwave shielding device 309, causing most of the microwave to return to the original propagation direction, thereby improving the utilization rate of microwave energy.
[0060] In some examples, the microwave shielding device 309 may include an electromagnetic bandgap structure (EBG, Electromagnetic Band Gap). EBG is an artificial electromagnetic material with a periodic arrangement and has specific electromagnetic bandgap characteristics, which can prevent the propagation of electromagnetic waves with specific frequencies. By reasonably designing the parameters of the EBG, high-efficiency microwave shielding can be achieved within a specific frequency band.
[0061] In some examples, the microwave shielding device 309 may include a microwave shielding plate. The microwave shielding plate can be made of a metal material; or, the substrate of the microwave shielding plate can be made of a non-metal material such as plastic or quartz, and a shielding film layer made of a metal material is provided on the upper surface of the substrate.
[0062] In other examples, the microwave shielding device 309 may also include a microwave shielding net, a multi-layer composite shielding plate, a conductive rubber shielding plate, etc., as long as its corresponding functions can be realized.
[0063] In some embodiments, the support assembly includes a base 310 and a support column 311. The base 310 is fixedly connected to the rotary flange 302 in the rotary clamping device 300, and the base 310 is also fixedly connected to the support column 311.
[0064] The base 310 can be fixedly connected to the rotary flange 302 by at least one of the following methods: welding, plugging, clamping, screwing, bonding, etc. The base 310 can be fixedly connected to the support column 311 by at least one of the following methods: welding, plugging, clamping, screwing, bonding, etc.
[0065] Exemplarily, in order to balance the installation difficulty and installation reliability, the cross-sectional area of the base 310 is larger than that of the support column 311, and the base 310 can be detachably connected to the support column 311. The specific dimensions of the base 310 are set according to actual needs. The base 310 is cylindrical, and the base 310 is provided with a jack, and the support column 311 is inserted into the jack; in order to improve the connection reliability, the jack is provided with internal threads, and the part of the support column 311 that cooperates with the jack is provided with external threads. The rotary flange 302 is provided with a positioning hole, and the lower part of the base 310 is located in the positioning hole, and the base 310 can be bonded or welded or in interference fit with the rotary flange 302.
[0066] The support column 311 is provided with a plurality of placement grooves 311a, and the plurality of placement grooves 311a are spaced along the axial direction of the chamber base 100. The notch of the placement groove 311a is located on the surface of the support column 311 facing the central axis of the chamber base 100. Among them, the dimension of the placement groove 311a along the axial direction of the chamber base 100 can be slightly larger than the thickness of the semiconductor workpiece 600 to facilitate the picking and placing of the semiconductor workpiece 600.
[0067] In some examples, in order to improve the support reliability of the semiconductor workpiece 600, there are at least three support columns 311, and the three support columns 311 are spaced along a preset curve; the number and distribution of the bases 310 are adapted to the support columns 311. Among them, the preset curve can be circular, and its circle can be located on the central axis of the rotary flange 302.
[0068] The placement groove 311a has a first groove wall opposite to the notch; the placement groove 311a also has two second groove walls connected to the first groove wall, and the two second groove walls are spaced and opposite along the axial direction of the chamber base 100. The distance between the first groove walls of the placement grooves 311a of at least two adjacent support columns 311 is greater than the radius of the semiconductor workpiece 600, providing space for picking and placing the semiconductor workpiece 600 and reducing the difficulty of picking and placing the semiconductor workpiece 600.
[0069] Optionally, the distance between the first groove walls of the placement groove 311a is greater than the radius of the semiconductor workpiece 600, and the central angle corresponding to two adjacent support columns 311 can be approximately 150°, so as to balance the support reliability of the support column 311 and the convenience of placing and removing the semiconductor workpiece 600.
[0070] In other examples, there can be two support columns 311, and the two support columns 311 are arranged oppositely. The distance between the first groove walls of the placement groove 311a in the two support columns 311 is greater than the radius of the semiconductor workpiece 600.
[0071] It can be understood that: the number of the support columns 311 can be set according to actual needs as long as its corresponding functions can be realized. The number of the placement grooves 311a in the support columns 311 can also be set according to actual needs; among them, the distance between the second groove walls of two adjacent placement grooves 311a can also be set according to actual needs, which is beneficial to setting a larger number of placement grooves 311a and can also balance the strength of the support column 311 so as to ensure the support reliability for the semiconductor workpiece 600.
[0072] In other embodiments, the support assembly can also include a support column 311. The diameter of the support column 311 can be approximately equal to the diameter of the semiconductor workpiece 600, and the shape of the placement groove 311a on the support column 311 is adapted to the shape of the semiconductor workpiece 600. The support assembly further includes fixing connectors such as bolts or pins for fixedly connecting the support column 311 and the rotating flange 302.
[0073] Please refer to Figure 3 , in some examples, carriers 312 are arranged in the placement groove 311a at the uppermost position and the placement groove 311a at the lowermost position. The carriers 312 are made of a material with a resistivity greater than or equal to a threshold value. Among them, the semiconductor workpieces 600 placed in other placement grooves 311a are located between the above-mentioned carriers 312. The high-resistivity carriers 312 can enable microwaves to act better on the semiconductor workpieces 600, reduce dielectric loss and heat conduction loss, thereby helping to convert microwave energy into heat, accelerating the heating speed of the semiconductor workpieces 600 and ensuring heating uniformity. The resistivity can be set according to actual needs; in different scenarios, carriers 312 with corresponding resistivities can be selected according to actual needs and placed in the placement grooves 311a.
[0074] In some embodiments, the temperature detection device 400 includes at least two non-contact temperature sensors, and the highest temperature in the optimal measurement temperature range of one temperature sensor is less than or equal to the lowest temperature in the optimal measurement temperature range of another temperature sensor. For example, the measurement temperature range of one temperature sensor is 0 - 250 °C; the measurement temperature of another temperature sensor is 250 - 800 °C.
[0075] With the above settings, this embodiment can be applied to more heating scenarios and meet more process requirements.
[0076] In some embodiments, the microwave annealing device is configured with a cooling device 107, and the cooling device 107 can be used to dissipate heat from the chamber base 100. A second cooling channel can be provided in the chamber base 100, and the cooling device 107 is used to provide a cooling medium for the second cooling channel. The cooling medium can be a cooling gas or a coolant.
[0077] Exemplarily, the second cooling channel in the chamber base 100 can be spirally ascending along the axial direction of the chamber base 100, which is beneficial to improving the cooling uniformity; wherein, in order to reduce the processing difficulty of the chamber body, the chamber base 100 can adopt a double-layer structure, and grooves are respectively provided on the opposite surfaces of the inner layer and the outer layer. In this way, when the inner layer and the outer layer are connected, the grooves of the inner layer and the outer layer can enclose the second cooling channel.
[0078] Alternatively, a plurality of sub-channels arranged along the axial direction are provided in the chamber body, and a flow dividing block is correspondingly provided at one end of the sub-channels. The flow dividing block can be connected to the cooling device 107; a flow collecting block is correspondingly provided at the other end of the sub-channels, and the flow collecting block is used to return the cooled cooling medium to facilitate discharging the cooled cooling medium to the chamber base 100.
[0079] It can be understood that: the specific shape of the cooling channel can be set according to actual needs, and no specific limitation is made here in this embodiment.
[0080] It should be noted that: if it is necessary to dissipate heat from the internal space of the chamber base 100, the intake device 102 can be used to provide a cooling medium; or a control valve can be provided on the chamber base 100, and the control valve can connect or disconnect the second cooling channel of the chamber base 100 and the internal space of the chamber base 100.
[0081] In some embodiments, the chamber base 100 can be provided with a viewing window 105 to facilitate real-time observation of the situation inside the chamber base 100. The chamber base 100 can also be provided with an openable and closable chamber door 104. When the chamber door 104 is in the closed state, the chamber door 104 can isolate the internal space of the chamber base 100 from the external space.
[0082] It can be understood that: the other compositions and functions of the microwave annealing device in this embodiment are known to those skilled in the art. To reduce redundancy, no further description is given here.
[0083] In the description of this specification, the descriptions referring to terms such as "one embodiment", "some embodiments", "examples", "specific examples", or "some examples", etc., mean that the specific features, structures, materials, or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present disclosure. In this specification, the schematic expressions of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described can be combined in a suitable manner in any one or more embodiments or examples.
[0084] In the description of the present disclosure, it should be understood that the orientation or positional relationships indicated by terms such as "upper", "lower", "top", "bottom", "inner", "outer", "axial", etc. are based on the orientation or positional relationships shown in the drawings, and are only for the convenience of describing the present disclosure and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as a limitation to the present disclosure.
[0085] In addition, the terms "first", "second", etc. used in the embodiments of the present disclosure are only for descriptive purposes, and cannot be understood as indicating or implying relative importance, or implicitly indicating the number of technical features indicated in this embodiment. Thus, the features defined with terms such as "first", "second", etc. in the embodiments of the present disclosure can explicitly or implicitly indicate that at least one such feature is included in this embodiment. In the description of the present disclosure, the meaning of the word "plurality" is at least two or more than two, such as two, three, four, etc., unless otherwise specifically defined in the embodiments.
[0086] In the present disclosure, unless otherwise clearly specified or limited by relevant regulations in the embodiments, the terms "installed", "connected", "connected", and "fixed", etc. appearing in the embodiments should be understood in a broad sense. For example, the connection can be a fixed connection, a detachable connection, or integrated. It can be understood that it can also be a mechanical connection, an electrical connection, etc.; of course, it can also be directly connected, or indirectly connected through an intermediate medium, or it can be the communication inside two elements, or the interaction relationship between two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present disclosure can be understood according to specific implementation situations.
[0087] In this disclosure, unless otherwise clearly specified and defined, a first feature being "on" or "under" a second feature may mean that the first and second features are in direct contact, or the first and second features are indirectly in contact via an intermediate medium. Further, a first feature being "above", "over" and "on top of" a second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the horizontal height of the first feature is higher than that of the second feature. A first feature being "under", "below" and "beneath" a second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the horizontal height of the first feature is less than that of the second feature.
[0088] Although the embodiments of the present disclosure have been shown and described above, it is to be understood that the above embodiments are exemplary and should not be construed as limiting the present disclosure. Those of ordinary skill in the art can make changes, modifications, substitutions and variations to the above embodiments within the scope of the present disclosure.
Claims
1. A microwave annealing device, comprising: A chamber base, wherein the inner space of the chamber base is used to accommodate a semiconductor workpiece; A microwave device, disposed adjacent to the chamber substrate, for annealing the semiconductor workpiece; A rotating clamping device, at least partially located in the chamber base, is used to support the semiconductor workpiece and drive the semiconductor workpiece to rotate; wherein the rotating clamping device comprises: a driving member, a belt transmission assembly and a supporting assembly, the driving member is connected to the belt transmission assembly, the belt transmission assembly is connected to the supporting assembly, the supporting assembly is used to support a plurality of semiconductor assemblies, and the plurality of semiconductor assemblies are distributed at intervals along the axial direction of the chamber base; the driving member is used to drive the supporting assembly and the semiconductor workpiece to rotate through the belt transmission assembly; A temperature detection device, installed in the chamber base, for detecting the temperature of the semiconductor workpiece; The control device is respectively connected to the microwave device, the driving element and the temperature detection device for communication.
2. The device according to claim 1, wherein: The rotating clamping device also includes: a fixed flange and a rotating flange; the fixed flange is fixedly connected to the chamber base, the rotating flange is fixedly connected to the support assembly, and the rotating flange and the support assembly are located on the side of the fixed flange facing the internal space of the chamber base.
3. The device according to claim 2, wherein: The belt transmission assembly comprises: a driving wheel, a fixed shaft, a conveyor belt, a driven wheel and a rotating shaft, the driving wheel is fixedly connected to the output end of the driving member, and the conveyor belt is tensioned on the driving wheel and the driven wheel respectively; The driving wheel is connected to the fixed flange via a fixed shaft; The driven wheel is fixedly connected to the rotating shaft, and the rotating shaft passes through the fixed flange and is fixedly connected to the rotating flange; wherein the rotating shaft is rotatably sealed and matched with the fixed flange via a magnetic fluid seal.
4. The device according to claim 2, wherein: The fixed flange is provided with a first cooling channel, an input port of the first cooling channel is connected to an input pipeline for providing a cooling medium, and an output port of the first cooling channel is connected to a recovery pipeline for recovering the cooling medium.
5. The device according to claim 2, further comprising: The microwave shielding device is arranged between the rotating flange and the fixed flange, and is used to prevent the microwaves generated by the microwave device from leaking.
6. The device according to claim 1, wherein: The support assembly includes: a base and a support column, the base is fixedly connected to the rotating flange in the rotating clamping device, the base is also fixedly connected to the support column, and the cross-sectional area of the base is larger than the cross-sectional area of the support column; The support column is provided with a plurality of placement grooves, and the plurality of placement grooves are spaced apart and distributed along the axial direction of the chamber base, and the notches of the placement grooves are located on the surface of the support column facing the central axis of the chamber base.
7. The device according to claim 6, wherein: There are at least three support columns, which are spaced apart along a preset curve; the number and distribution of the bottom brackets are adapted to the support columns; The placement groove has a first groove wall opposite to the groove opening; the placement groove also has two second groove walls connected to the first groove wall, and the two second groove walls are spaced and distributed opposite to each other along the axial direction of the chamber base; The distance between the first groove walls of the placement grooves of at least two adjacent support pillars is greater than the radius of the semiconductor workpiece, thereby providing space for taking and placing the semiconductor workpiece.
8. The device according to claim 6, wherein: The placement groove near the top end of the support column and the placement groove near the bottom end of the support column are respectively provided with a carrier, and the carrier is made of a material with a resistivity greater than or equal to a threshold value.
9. The device according to claim 1, wherein: The microwave device comprises: at least one microwave source, and a microwave connector connecting the microwave source to a chamber substrate; Wherein, when there are multiple microwave sources, at least two of the microwave sources are symmetrically distributed about a preset symmetry line; the preset symmetry line intersects and is perpendicular to the central axis of the chamber base; The frequency of the microwave source is 2.45 GHz or 5.8 GHz.
10. The device according to claim 1, wherein: The temperature detection device includes at least two non-contact temperature sensors, wherein the highest temperature in the measurement temperature range of one of the temperature sensors is less than or equal to the lowest temperature in the measurement temperature range of another of the temperature sensors.