Monolithic radiation source integrated with resonant tunneling diode oscillator and reflective amplifier

Abstract

The invention discloses a monolithic radiation source integrating a resonant tunneling diode oscillator and a reflective amplifier, which belongs to the technical field of radio transceiving and comprises a substrate, and an RTO, an RTA and an on-chip antenna which are positioned above the substrate, the RTA comprises an RTD tube core pair and an orthogonal hybrid coupler, and the RTD tube core pair comprises a first RTD and a second RTD; the RTO is used for generating an oscillation signal which is input to the RTA for reflection amplification, and the oscillation signal is radiated through the on-chip antenna after being output. The negative differential conductance formed by the resonance tunneling effect of the RTD is used for compensating the loss of the transmission line and the radiation antenna of the RTO to form an oscillation signal, and the orthogonal hybrid coupler is used for performing reflection enhancement on the oscillation signal to realize voltage gain output, so that the output power of a single integrated radiation source is improved; the monolithic radiation source can also serve as an array unit to be expanded into an RTD radiation source array structure, and the output power of the RTD radiation source is further amplified.

Description

Technical Field

[0001] The present invention belongs to the technical field of radio transceiver, and particularly relates to a monolithic radiation source integrating a resonant tunneling diode oscillator and a reflective amplifier. Background Art

[0002] A resonant tunneling diode (RTD) is a two-terminal device based on the quantum tunneling effect. Due to the very short electron tunneling time and extremely small device junction capacitance, the RTD has characteristics such as high frequency, high speed, low power consumption, bistability, and self-locking. RTD technology is expected to become one of the core enabling technologies for future 6G technology and play an important role in the space-ground integrated information network and all things intelligent connection. The RTD device is an ideal device for realizing a miniaturized and compact terahertz solid-state radiation source with low-power operation at room temperature. The radiation source fabricated using the RTD device has the characteristics of small volume, light weight, easy integration, room-temperature operation, and low power consumption, which is one of the main applications of RTD technology. However, the main technical bottleneck restricting the development of RTD radiation sources currently lies in their relatively low output power. Feasible solutions include breaking through the output power of a single-tube RTD radiation source and adopting an array design of RTD radiation sources.

[0003] Since the negative differential conductance (NDC) of the RTD device can compensate for the losses of the transmission line or the radiation antenna and be used to provide gain, an amplification function can be realized based on the RTD. A common RTD amplifier is a reflection-based RTD amplifier (RTA). In 2013, Jongwon Lee et al. from the Korea Advanced Institute of Science and Technology proposed a monolithic integrated low-power RTA circuit, adopting a reflective amplification architecture (DOI: 10.1109 / ICIPRM.2013.6562608); in 2014, Jongwon Lee further optimized the circuit structure and proposed a low DC power consumption RTA circuit; subsequently, in 2017 and 2020, Jongwon Lee further improved the circuit performance and conducted circuit noise analysis; meanwhile, in 2022, Ahmed Khalid A Alqurashi from the University of Manchester, UK, reported an RTA circuit operating in the X-band (Ph.D. thesis: Advanced Tunneling Diodes for High-Frequency Applications and Wireless Communication Systems).

[0004] In summary, by combining the RTA and RTD oscillators (RTD Oscillator, RTO) and integrating an on-chip antenna simultaneously, a homogeneous and isomorphic monolithic integrated radiation source can be realized, which is expected to increase the output power of a single integrated radiation source. Further expanding it into an array can achieve a further increase in radiation power. Summary of the Invention

[0005] Aiming at the technical bottleneck of the low output power faced by traditional RTD radiation sources, the present invention provides a monolithic radiation source integrating a resonant tunneling diode oscillator and a reflection amplifier, which can simultaneously generate and amplify microwave, millimeter-wave, and terahertz frequencies, and realize electromagnetic wave radiation through an on-chip antenna integrated on a single chip. The structure is compact and can be extended as an array unit into an array to further amplify the output power of the radiation source.

[0006] The technical solution adopted by the present invention is as follows:

[0007] A monolithic radiation source integrating a resonant tunneling diode oscillator and a reflection amplifier, comprising a substrate, and a resonant tunneling diode oscillator (RTO), a reflection resonant tunneling diode amplifier (RTA), and an on-chip antenna located above the substrate;

[0008] The RTO generates an oscillation signal under a first DC bias and inputs it to the RTA;

[0009] The RTA includes an RTD die pair and a quadrature hybrid coupler. The RTD die pair includes a first RTD and a second RTD. The quadrature hybrid coupler includes a first port, a second port, a third port, and a fourth port; wherein, the first port, the second port, the third port, and the fourth port are located at the intersections of 4 corresponding orthogonal arms; the first RTD is connected to the third port, and the second RTD is connected to the fourth port; the oscillation signal generated by the RTO is input to the RTA from the first port, and after reflection amplification, it is output from the second port;

[0010] The on-chip antenna is connected to the second port of the RTA to radiate the amplified oscillation signal.

[0011] Further, the RTO includes a stability resistor, a decoupling capacitor, a resonant inductor, a third RTD, and a DC blocking capacitor connected in sequence. By applying a first DC bias to the stability resistor, the RTO generates an oscillation signal and outputs it through the DC blocking capacitor.

[0012] Further, the first RTD, the second RTD, and the third RTD adopt the same structure and material system.

[0013] Further, the material system of the first RTD, the second RTD, and the third RTD is a GaN / AlN material system or an InP / InGaAs / AlAs material system.

[0014] Furthermore, the resonant inductor is implemented by using a coplanar waveguide microstrip line structure with a shorted end.

[0015] Furthermore, the first series capacitor, the second series capacitor, the third series capacitor, the fourth series capacitor, and the decoupling capacitor are all implemented by using Metal-Insulator-Metal (MIM) capacitors.

[0016] Furthermore, the stabilization resistor is implemented by using a thin film resistor.

[0017] Furthermore, the quadrature hybrid coupler further includes a first series capacitor, a second series capacitor, a third series capacitor, and a fourth series capacitor located at the intersections of the four corresponding orthogonal arms.

[0018] Furthermore, the first port, the second port, the third port, and the fourth port are each composed of two sub-ports; among them, one sub-port 1_1 of the first port is connected to the DC-blocking capacitor, and the other sub-port 1_2 is connected to the first inductor; one sub-port 2_1 of the second port is connected to the on-chip antenna, and the other sub-port 2_2 is connected to the second inductor; one sub-port 3_1 of the third port is connected to the first RTD, and the other sub-port 3_2 is connected to the second DC bias through the third inductor and the first bypass capacitor; one sub-port 4_1 of the fourth port is connected to the second RTD, and the other sub-port 4_2 is connected to the third DC bias through the fourth inductor and the second bypass capacitor.

[0019] Furthermore, the third DC bias is the same as the second DC bias.

[0020] Furthermore, the first inductor, the second inductor, the third inductor, and the fourth inductor are implemented by using a shorted sub-λ / 4 (sub-λ / 4) microstrip stub or a spiral inductor.

[0021] Furthermore, the on-chip antenna adopts structures such as an on-chip rectangular patch antenna, a bowtie patch antenna, a spiral patch antenna, a slot antenna, an antenna integrated with a micro resonator, an antenna integrated with a back cavity, etc.

[0022] Furthermore, the substrate adopts GaN or InP.

[0023] The present invention also proposes an RTD radiation source array structure, including a plurality of monolithic radiation sources integrating resonant tunneling diode oscillators and reflective amplifiers arranged in an array.

[0024] The beneficial effects of the present invention are as follows:

[0025] 1. The present invention proposes a monolithic radiation source integrating a resonant tunneling diode oscillator and a reflective amplifier, which compensates for the losses of the transmission line and the radiation antenna of the RTO by using the negative differential conductance formed by the resonant tunneling effect of the RTD to form an oscillation signal, and then reflects and enhances the oscillation signal through an orthogonal hybrid coupler to achieve voltage gain output, thereby enhancing the output power of a single integrated radiation source;

[0026] 2. The monolithic radiation source proposed by the present invention can be used as an array unit to expand into an RTD radiation source array structure to further amplify the output power of the RTD radiation source;

[0027] 3. The structure of the monolithic radiation source proposed by the present invention is compact, and it can realize a miniaturized, room-temperature-operating, and highly reliable radiation source, which is used for high-speed microwave millimeter-wave and terahertz communication and sensing integration. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Figure 1 Schematic layout structure diagram of the monolithic radiation source integrating a resonant tunneling diode oscillator and a reflective amplifier proposed in Embodiment 1 of the present invention;

[0029] Figure 2 Schematic layout structure diagram of the RTO in the monolithic radiation source integrating a resonant tunneling diode oscillator and a reflective amplifier proposed in Embodiment 1 of the present invention;

[0030] Figure 3 Schematic structure diagram of the GaN-based RTD device in the monolithic radiation source integrating a resonant tunneling diode oscillator and a reflective amplifier proposed in Embodiment 1 of the present invention;

[0031] Figure 4 Schematic layout structure diagram of the RTA in the monolithic radiation source integrating a resonant tunneling diode oscillator and a reflective amplifier proposed in Embodiment 1 of the present invention;

[0032] Figure 5 Schematic layout structure diagram of the on-chip antenna in the monolithic radiation source integrating a resonant tunneling diode oscillator and a reflective amplifier proposed in Embodiment 1 of the present invention;

[0033] Figure 6 Circuit schematic diagram of the monolithic radiation source integrating a resonant tunneling diode oscillator and a reflective amplifier proposed in Embodiment 1 of the present invention;

[0034] Figure 7 Oscillation characteristics of the RTO in the monolithic radiation source integrating a resonant tunneling diode oscillator and a reflective amplifier proposed in Embodiment 1 of the present invention; wherein, (a) is the curve of the output signal amplitude varying with time; (b) is the schematic diagram of the oscillation frequency;

[0035] Figure 8Amplification characteristics of RTA in the monolithic radiation source integrating a resonant tunneling diode oscillator and a reflective amplifier proposed in Embodiment 1 of the present invention; among them, (a) is the return loss curve; (b) is the power gain curve;

[0036] Figure 9 Overall output characteristics of the monolithic radiation source integrating a resonant tunneling diode oscillator and a reflective amplifier proposed in Embodiment 1 of the present invention;

[0037] Figure 10 Schematic diagram of the InP-based RTD device structure in the monolithic radiation source integrating a resonant tunneling diode oscillator and a reflective amplifier proposed in Embodiment 2 of the present invention;

[0038] Figure 11 Schematic diagram of the on-chip antenna structures in Embodiment 3 and Embodiment 4 of the present invention;

[0039] Explanations of the marks in the drawings are as follows:

[0040] 1: Substrate; 2: RTO; 3: RTA; 4: On-chip antenna; 5: Third RTD0; 6: Resonant inductor L OSC ; 7: Decoupling capacitor C E ; 8: Stabilizing resistor R E ; 9: DC-blocking capacitor C block ; 10: RTD die pair; 11: Quadrature hybrid coupler; 12: First RTD1; 13: Second RTD2; 14: Sub-port 1_1; 15: Sub-port 1_2; 16: Sub-port 2_1; 17: Sub-port 2_2; 18: Sub-port 3_1; 19: Sub-port 3_2; 20: Sub-port 4_1; 21: Sub-port 4_2; 22: First series capacitor C p1 ; 23: Second series capacitor C p2 ; 24: Third series capacitor C s1 ; 25: Fourth series capacitor C s2 ; 26: First inductor L1; 27: Second inductor L2; 28: Third inductor L3; 29: First bypass capacitor C pb1 ; 30: Fourth inductor L4; 31: Second bypass capacitor C pb2 。 Detailed implementation manners

[0041] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are some, but not all, of the embodiments of the present invention. Usually, the components of the embodiments of the present invention described and shown in the drawings here can be arranged and designed in various different configurations.

[0042] Accordingly, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the claimed invention, but merely represents selected embodiments of the present invention. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the scope of protection of the present invention.

[0043] Embodiment 1

[0044] This embodiment provides a monolithic radiation source integrating a resonant tunneling diode oscillator and a reflective amplifier, and the structure is as Figure 1 shown, including a substrate 1, and an RTO 2, an RTA 3, and an on-chip antenna 4 located above the substrate 1.

[0045] As Figure 2 shown, the RTO 2 includes a stable resistor R E 8, a decoupling capacitor C E 7, a resonant inductor L OSC 6, a third RTD 0 5, and a blocking capacitor C block 9; wherein, the third RTD 0 5 forms an RTD junction region through photolithography and etching processes, and adopts a GaN / AlN material system as Figure 3 shown. Its top is a collector metal layer connected to the signal line (the orange line is used as the signal line in the drawings of this embodiment), and its bottom is an emitter metal layer connected to the ground line (the yellow line is used as the ground line in the drawings of this embodiment); the resonant inductor L OSC 6 is realized by a coplanar waveguide microstrip line structure with a terminated short circuit. One end of it is connected to the collector metal layer of the third RTD 05, and the other end is connected to the top metal layer of the decoupling capacitor C E 7; the top metal layer of the decoupling capacitor C E 7 is connected to the signal line, and the bottom metal layer is connected to the ground line. The material of the intermediate dielectric layer is S i N x ; the stable resistor R E 8 is located between the signal line and the ground line and is formed by thin film sputtering deposition. Its material is N i C r ; the blocking capacitor C block 9 is located on the right side of the third RTD 05 and is specifically a series capacitor. Its bottom metal layer is interconnected with the signal line, and its top metal layer serves as the output RF signal line of the RTO 2. The material of the intermediate dielectric layer is S i N x . As Figure 2 shown, taking the left side of the stable resistor R E 8 as the input port of the first DC bias V bias1 , the blocking capacitor C blockOn the right side of 9 is the RF output port of RTO2.

[0046] As Figure 4 shown, the RTA3 includes an RTD die pair 10 and a quadrature hybrid coupler 11. The RTD die pair 10 includes a first RTD1 12 and a second RTD2 13. The quadrature hybrid coupler 11 includes a first port, a second port, a third port, a fourth port, a first series capacitor C p1 22, a second series capacitor C p2 23, a third series capacitor C s1 24, and a fourth series capacitor C s2 25. Among them, the first port, the second port, the third port, and the fourth port are located at the intersections of 4 corresponding orthogonal arms, and each is composed of two sub-ports. One sub-port 1_1 14 of the first port is connected to the DC-blocking capacitor C block 9, and the other sub-port 1_2 15 is connected to the first inductor L1 26. One sub-port 2_1 16 of the second port is connected to the on-chip antenna 4, and the other sub-port 2_2 17 is connected to the second inductor L2 27. One sub-port 3_1 18 of the third port is connected to the first RTD1 12, and the other sub-port 3_2 19 is connected to the second DC bias V pb1 through the third inductor L3 28 and the first bypass capacitor C bias2 ; One sub-port 4_1 20 of the fourth port is connected to the second RTD2 13, and the other sub-port 4_2 21 is connected to the third DC bias V pb2 through the fourth inductor L4 30 and the second bypass capacitor C bias3 ; The first inductor L1 26 and the fourth inductor L4 30 adopt microstrip lines with shorted ends, and the second inductor L2 27 and the third inductor L3 28 adopt sub-λ / 4 microstrip lines with shorted ends. The first series capacitor C p1 22 is located on the orthogonal arm between the first port and the second port; The second series capacitor C p2 23 is located on the orthogonal arm between the third port and the fourth port; The third series capacitor C s1 24 is located on the orthogonal arm between the first port and the third port; The fourth series capacitor C s2 25 is located on the orthogonal arm between the second port and the fourth port; The other ends of the first RTD1 12 and the second RTD2 13 are grounded; The second DC bias V bias2 and the third DC bias V bias3 are the same.

[0047] As Figure 5 shown, the on-chip antenna 4 adopts a rectangular microstrip patch structure, Figure 5 and its left end is connected to the sub-port 2_1 16.

[0048] In this embodiment, the structures and material systems of the first RTD1 12, the second RTD2 13 and the third RTD0 5 are the same; the first series capacitor C p1 22, the second series capacitor C p2 23, the third series capacitor C s1 24, the fourth series capacitor C s2 25 and the decoupling capacitor C E 7 all adopt MIM capacitors.

[0049] The working principle of the monolithic radiation source of the integrated resonant tunneling diode oscillator and the reflective amplifier provided in this embodiment is as Figure 6 shown as follows:

[0050] Apply a first DC bias V E to the stabilizing resistor R bias1 , so that the negative differential conductance (NDC) formed by the third RTD0 5 can compensate for the losses of the resonant circuit composed of the resonant inductor L OSC , the decoupling capacitor C E 7 and the stabilizing resistor R E 8. At this time, RTO2 satisfies the resonance condition and generates an oscillation signal, and its resonance frequency f OSC is determined by the following formula:

[0051]

[0052] where G n represents the negative differential conductance value of the third RTD0 5, R s represents the contact resistance of the third RTD0 5, and C n represents the self-capacitance of the third RTD0 5.

[0053] The generated oscillation signal is input to RTA3 through the DC-blocking capacitor C block 9 as the input signal V in of RTA3; under the drive of the second DC bias V bias2 and the third DC bias V bias3 , the input signal V in is reflected and amplified in the quadrature hybrid coupler 11 to obtain the output signal V out of RTA3; among them, there is a 270° phase difference between the output signal V out and the input signal V in , that is:

[0054] V out = Γ∠-270°

[0055] In the formula, Γ represents the reflection coefficient, which can be expressed as:

[0056]

[0057] Wherein, Z out is the output characteristic impedance of the quadrature hybrid coupler 11, and Z RTD is the input impedance of the quadrature hybrid coupler 11;

[0058] Furthermore, the power gain of RTA3 is obtained:

[0059] Power Gain = |Γ∠-270°| 2

[0060] Therefore, by cascading RTA3 at the end of RTO2, the amplification of the output signal of RTO3 can be realized, thereby increasing the output power of the oscillation signal, and radiating through the on-chip antenna 4.

[0061] Figure 7 For the oscillation characteristics of RTO in the monolithic radiation source integrating a resonant tunneling diode oscillator and a reflective amplifier proposed in this embodiment, the amplitude of its output signal is V RTO = V in = 400 mV, as shown in Figure 7 (a); its oscillation frequency is 10.8 GHz, as shown in Figure 7 (b).

[0062] Figure 8 For the amplification characteristics of RTA in the monolithic radiation source integrating a resonant tunneling diode oscillator and a reflective amplifier proposed in this embodiment, its return loss can reach 10.3 dB at a frequency of 10.8 GHz, as shown in Figure 8 (a); its power gain can reach 12.5 dB at a frequency of 10.8 GHz, as shown in Figure 8 (b).

[0063] Figure 9 For the overall output characteristics of the monolithic radiation source integrating a resonant tunneling diode oscillator and a reflective amplifier proposed in this embodiment, the voltage span of the input signal V in of RTA3 is 1.045 mV, and the voltage span of the output signal V out of RTA3 is 1.279 mV. Furthermore, the voltage amplification factor of RTA3 is 1.224, indicating that cascading RTA3 at the end of RTO2 can effectively amplify the oscillation signal output by RTO2.

[0064] In summary, this embodiment utilizes the resonant tunneling effect of the RTD to generate the NDC effect, uses the NDC to achieve negative resistance oscillation at room temperature, and further realizes a reflective amplifier based on the quadrature hybrid coupler 11 and the NDC effect, effectively improving the output power of a single integrated radiation source, and having the advantages of miniaturization, high integration, and low power consumption.

[0065] Embodiment 2

[0066] This embodiment proposes a monolithic radiation source integrating a resonant tunneling diode oscillator and a reflective amplifier. Compared with Embodiment 1, the difference is only that: the materials of the first RTD 112, the second RTD 213, and the third RTD 05 are all adjusted to use the InP material system, and its structure is as Figure 10 shown. From bottom to top in the longitudinal cross-section, there are an emitter (n++In 0.53 Ga 0.47 As), an emitter isolation layer (In 0.53 Ga 0.47 As), an emitter barrier layer (AlAs), a quantum well layer (In 0.8 Ga 0.2 As), a collector barrier layer (AlAs), a collector isolation layer (In 0.53 Ga 0.47 As), and a collector (n++In 0.53 Ga 0.47 As). Other structures and materials remain unchanged.

[0067] Embodiment 3

[0068] This embodiment proposes a monolithic radiation source integrating a resonant tunneling diode oscillator and a reflective amplifier. Compared with Embodiment 1, the difference is only that: the structure of the on-chip antenna 4 is adjusted to a bowtie antenna as Figure 11 shown. The left end of its feeder is connected to the sub-port 2_1 16, and the right end is connected to the coplanar ground of the bowtie antenna. This antenna is a hollow slit. Other structures and materials remain unchanged.

[0069] Embodiment 4

[0070] This embodiment proposes a monolithic radiation source integrating a resonant tunneling diode oscillator and a reflective amplifier. Compared with Embodiment 2, the difference is only that: the structure of the on-chip antenna 4 is adjusted to a bowtie antenna as Figure 11 shown. The left end of its feeder is connected to the sub-port 2_1 16, and the right end is connected to the coplanar ground of the bowtie antenna. This antenna is a hollow slit. Other structures and materials remain unchanged.

[0071] The above embodiments only illustrate the principles and advantages of the present invention, rather than being used to limit the present invention. They are only for helping to understand the principles of the present invention. The protection scope of the present invention is not limited to the above configurations and embodiments. Those skilled in the art can make various other specific deformations and combinations without departing from the essence of the present invention, but still within the protection scope of the present invention.

Claims

1. A monolithic radiation source integrating a resonant tunneling diode oscillator and a reflective amplifier, characterized in that: including a substrate, and an RTO, an RTA, and an on-chip antenna located above the substrate; The RTO generates an oscillation signal under a first DC bias and inputs the oscillation signal to the RTA; The RTA includes an RTD die pair and an orthogonal hybrid coupler, the RTD die pair includes a first RTD and a second RTD, the orthogonal hybrid coupler includes a first port, a second port, a third port and a fourth port located at the intersection of four corresponding orthogonal arms; wherein the first RTD is connected to the third port, and the second RTD is connected to the fourth port; the oscillation signal generated by the RTO is input from the first port to the RTA, and is output from the second port after reflection amplification; The on-chip antenna is connected to the second port of the RTA to radiate the amplified oscillation signal.

2. The monolithic radiation source integrating a resonant tunneling diode oscillator and a reflective amplifier according to claim 1, characterized in that: The RTO includes a stabilizing resistor, a decoupling capacitor, a resonant inductor, a third RTD and a DC blocking capacitor connected in sequence. By applying a first DC bias to the stabilizing resistor, the RTO generates an oscillating signal, which is output through the DC blocking capacitor.

3. The monolithic radiation source integrating a resonant tunneling diode oscillator and a reflective amplifier according to claim 2, characterized in that: The first RTD, the second RTD and the third RTD adopt the same structure and material system.

4. The monolithic radiation source integrating a resonant tunneling diode oscillator and a reflective amplifier according to claim 3, characterized in that: The material system of the first RTD, the second RTD and the third RTD is a GaN / AlN material system or an InP / InGaAs / AlAs material system.

5. The monolithic radiation source integrating a resonant tunneling diode oscillator and a reflective amplifier according to any one of claims 1 to 4, characterized in that: The orthogonal hybrid coupler further includes a first series capacitor, a second series capacitor, a third series capacitor and a fourth series capacitor located at the intersection of the four corresponding orthogonal arms.

6. The monolithic radiation source integrating a resonant tunneling diode oscillator and a reflective amplifier according to claim 5, characterized in that: The first port, the second port, the third port and the fourth port are each composed of two sub-ports; wherein, a sub-port 1_1 of the first port is connected to a DC blocking capacitor, and another sub-port 1_2 is connected to a first inductor; a sub-port 2_1 of the second port is connected to an on-chip antenna, and another sub-port 2_2 is connected to a second inductor; a sub-port 3_1 of the third port is connected to a first RTD, and another sub-port 3_2 is connected to a second DC bias through a third inductor and a first bypass capacitor; a sub-port 4_1 of the fourth port is connected to a second RTD, and another sub-port 4_2 is connected to a third DC bias through a fourth inductor and a second bypass capacitor.

7. The monolithic radiation source integrating a resonant tunneling diode oscillator and a reflective amplifier according to claim 6, characterized in that: The third DC bias is the same as the second DC bias.

8. The monolithic radiation source integrating a resonant tunneling diode oscillator and a reflective amplifier according to claim 6, characterized in that: The resonant inductor is realized by a coplanar waveguide microstrip line structure with a short-circuited terminal; the first series capacitor, the second series capacitor, the third series capacitor, the fourth series capacitor and the decoupling capacitor are all MIM capacitors; the stabilizing resistor is a thin film resistor; the first inductor, the second inductor, the third inductor and the fourth inductor are realized by a sub-λ / 4 microstrip stub or a spiral inductor with a short-circuited terminal.

9. The monolithic radiation source integrating a resonant tunneling diode oscillator and a reflective amplifier according to claim 1, characterized in that: The on-chip antenna adopts an on-chip rectangular patch antenna, a bowtie patch antenna, a spiral patch antenna, a slot antenna, an antenna with an integrated micro-resonant cavity or an antenna with an integrated back cavity; the substrate adopts GaN or InP.

10. An RTD radiation source array structure, characterized in that: A monolithic radiation source comprising a plurality of integrated resonant tunneling diode oscillators and reflective amplifiers as claimed in claim 6 arranged in an array.

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