Semiconductor device and forming method thereof

By injecting auxiliary elements outside the N-type buried layer region to form a sacrificial layer, the step height difference problem between the N-type buried layer region and the non-N-type buried layer region is solved, ensuring the integrity of the flat surface and mask layer of the semiconductor device, and improving the reliability and stability of the device.

CN120264793APending Publication Date: 2025-07-04GTA SEMICON CO LTD
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Patent Information

Application Number
CN202510369444.0
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-03-26
Publication Date
2025-07-04

AI Technical Summary

Technical Problem

In the prior art, there is a step height difference between the N-type buried layer region and the non-N-type buried layer region, resulting in the problem of failure of semiconductor devices.

Method used

Before forming the N-type buried layer region, auxiliary elements are implanted to form a sacrificial layer, and doped elements are activated through the first thermal oxidation process to ensure that the oxidation rate of the N-type buried layer region and the non-N-type buried layer region is consistent, and the occurrence of height difference is avoided.

Benefits of technology

The N-type buried layer region is flush with the non-N-type buried layer region surface, avoiding device failure caused by mask layer residue, and improving the reliability and stability of semiconductor devices.

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Abstract

The invention relates to a semiconductor device and a forming method thereof. The forming method of the semiconductor device comprises the following steps of forming a substrate, wherein a first doping element is arranged in the substrate; injecting a second doping element into the substrate to form a first buried layer region, and taking the substrate at the periphery of the first buried layer region as a non-buried layer region; at least injecting auxiliary elements into the non-buried layer region to form a sacrificial layer exposed on the front surface of the substrate; processing the substrate by adopting a first thermal oxidation process to form a first thermal oxidation layer covering the front surface of the substrate, and activating the second doping element in the first buried layer region; the first thermal oxide layer is removed, the first buried layer area and the non-buried layer area are exposed, and the exposed surface of the first buried layer area is flush with the exposed surface of the non-buried layer area. According to the invention, the height difference between the first buried layer region and the non-buried layer region is avoided.
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