Perovskite quantum dot perovskite thin film laminated solar cell and preparation method thereof

Abstract

The invention provides a perovskite quantum dot perovskite thin film laminated solar cell structure and a preparation method thereof, and belongs to the technical field of perovskite laminated solar cells. Comprising a perovskite quantum dot top cell and a perovskite thin film bottom cell. The perovskite quantum dot perovskite thin film laminated solar cell structurally comprises a glass substrate, a transparent conductive film layer, a hole transport layer, a perovskite thin film layer, an electron transport layer, a buffer layer, a middle layer, a hole transport layer, a perovskite quantum dot layer, an electron transport layer, a buffer layer, a transparent electrode and a metal grid line electrode from bottom to top in sequence. According to the perovskite quantum dot perovskite thin film laminated solar cell prepared by the invention, the light absorption spectrum range is widened and the photoelectric conversion efficiency is improved through the laminated structure. The perovskite quantum dot perovskite thin film laminated solar cell prepared by the invention is simple in preparation method, low in cost and easy for large-scale preparation, and has remarkable commercial potential.

Description

Technical Field

[0001] The present invention relates to the technical field of tandem solar cells, and particularly relates to a method for preparing a perovskite quantum dot / perovskite thin film tandem solar cell. Background Art

[0002] Perovskite tandem solar cells are a new type of solar cell with high photoelectric conversion efficiency. The theoretical conversion efficiency of perovskite / silicon tandem solar cells can reach more than 33%, and the current highest certified efficiency in the laboratory is 33.2%, far exceeding the theoretical conversion efficiency of 29.4% of traditional single-crystalline silicon cells. At the same time, perovskite materials have the advantages of adjustable bandgap width, relatively low preparation cost, and simple production process.

[0003] The advantages of wide-bandgap quantum dot perovskite solar cells lie in their high stability, which is mainly due to the inhibition of ion migration and phase separation. For example, in wide-bandgap perovskite materials, the use of specific molecules can effectively inhibit photoinduced halogen phase separation, thereby improving the efficiency and stability of perovskite tandem solar cells. This strategy helps to reduce energy losses caused by ion migration and phase separation and enhance battery performance. At the same time, the photo-stability is improved. By introducing molecules with ultraviolet isomerization functions into the perovskite active layer, the perovskite material can be protected from ultraviolet damage and degradation. These molecules passivate defects through configurational transformation under ultraviolet light irradiation, thereby improving the photo-stability of perovskite solar cells. And the open-circuit voltage loss is reduced. Through molecular-induced strain regulation and interface passivation strategies, the open-circuit voltage loss can be reduced, which is one of the key factors for improving the efficiency of perovskite solar cells. Wide-bandgap quantum dot perovskite solar cells also improve the tolerance to humidity and temperature through material and structure optimization, which is one of the main challenges faced by traditional perovskite solar cells. This provides a solid foundation for their commercialization and large-scale application.

[0004] The present invention uses wide-bandgap quantum dots and narrow-bandgap perovskite to form a tandem solar cell, improving the efficiency and stability of perovskite solar cells and reducing the cost of photovoltaic cells. Summary of the Invention

[0005] The present invention relates to the technical field of two-terminal quantum dot perovskite tandem solar cells. To achieve the above object, the specific solutions provided by the present invention are as follows: A perovskite quantum dot / perovskite thin film tandem solar cell, characterized in that: the perovskite quantum dot / perovskite thin film tandem solar cell includes a glass substrate, a transparent conductive film layer, a hole transport layer, a perovskite thin film layer, an electron transport layer, a buffer layer, an intermediate layer, a hole transport layer, a perovskite quantum dot layer, an electron transport layer, a buffer layer, and a transparent electrode.

[0006] The glass substrate is one or several of the lead silicate glass layer, polymer layer, bilayer structure composed of graphene oxide and graphite flakes, three-layer mesoporous layer of titanium dioxide / zirconium oxide / carbon, borosilicate glass, quartz glass layer, low-iron glass layer, coated glass layer, glass-ceramic layer, and flexible glass layer, with a thickness ranging from 1 micron to 10 millimeters.

[0007] The transparent conductive film layer is a transparent conductive oxide thin film with a thickness between 5 nanometers and 10 microns.

[0008] The hole transport layer is one or several of self-assembled small molecule layers (SAMs), organic small molecule hole transport material spiro-OMeTAD, conductive polymer poly(3,4-ethylenedioxythiophene) polystyrene sulfonate, metal oxide nickel oxide nanoparticles, two-dimensional material MoS2 (molybdenum disulfide) quantum dot / graphene hybrids, polyaniline (PANI), polythiophene (PTHT), titanium dioxide (TiO2), zinc oxide (ZnO), nickel oxide (NiO), carbon nanotubes (CNTs), and conductive MOFs, with a thickness between 1 nanometer and 10 microns.

[0009] The perovskite thin film layer has a structure of ABX3, where A is a monovalent cation, including but not limited to one or several of lithium (Li), sodium (Na), potassium (K), cesium (Cs), rubidium (Rb), amino group, or amidinium group; B is a divalent cation, including but not limited to one or several of silver (Ag), gold (Au), lead (Pb), zinc (Zn), gallium (Ga), selenium (Se), rhodium (Rh), germanium (Ge), tin (Sn), tungsten (W), copper (Cu), arsenic (As), palladium (Pd), thallium (TI), bismuth (Bi), indium (In), antimony (Sb), mercury (Hg), iridium (Ir); X is a monovalent anion, including but not limited to one or several of bromine (Br), iodine (I), chlorine (Cl), or astatine (At); the mixed perovskite is composed of two mixed cations, or two halogen anions occupy the X position, with a thickness ranging from 1 nanometer to 100 microns.

[0010] The electron transport layer is one or several of metal oxides TiO2 (titanium dioxide), SnO2 (tin dioxide), organic small molecule Spiro-OMeTAD (2,2',7,7'-tetrakis(4-methoxyphenyl)-9,9'-spirobifluorene), graphene / TiO2 nanoparticle composite, graphene, carbon nanotube-doped TiO2, and organic molecular materials fullerene (C60, C70) and their derivatives, with a thickness between 1 nanometer and 10 microns.

[0011] The buffer layer is one or more of aluminum oxide (Al2O3), silicon dioxide (SiO2), silicon nitride (Si3N4), gallium nitride (GaN), silicon carbide (SiC), titanium (Ti), molybdenum (Mo), polyimide PI, polymethyl methacrylate PMMA, Cu2O, NiO, TPBi, and PEI, and the thickness is between 0.001 nanometers and 1000 nanometers.

[0012] The intermediate layer is one or several of AZO (ZnO∶Al), FTO (SnO2∶F), ITO (In2O3∶Sn), Spiro-OMeTAD (2,2',7,7'-tetrakis[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene), PEDOT:PSS (poly(3,4-ethylenedioxythiophene) polystyrene sulfonate), and TPBi (2,2',2'',2'''-tetrakis(4-fluorophenyl)-1,3,2-dioxolane), and the thickness of the intermediate layer is between 0.001 nanometers and 5 micrometers.

[0013] The perovskite quantum dots are one or several of ABX3 (A = Cs, FA, MA, or Rb, B = Pb, X = Cl, Br, or I) quantum dots, non-lead perovskite quantum dots, and core-shell structured perovskite quantum dots; the thickness of the quantum dot layer is between 0.5 nanometers and 1000 nanometers.

[0014] The transparent electrode is one or several of a transparent conductive film (TCO), graphene, carbon nanotubes (CNTs), conductive polymer poly(3,4-ethylenedioxythiophene) (PEDOT:PSS), metal grid, metal nanowire, conductive oxide / metal composite, and conductive perovskite thin film, and the thickness is between 1 nanometer and 10 micrometers.

[0015] The present invention provides a method for preparing a perovskite quantum dot / perovskite thin film stacked solar cell, including the following steps: Step 1: Fabricate a glass substrate by using, but not limited to, the melting method, sintering method, vapor deposition, and glass through via (TGV) technology.

[0016] Step 2: Fabricate an ITO layer by using, but not limited to, magnetron sputtering deposition, vacuum evaporation deposition, sol-gel method, chemical vapor deposition (CVD), pulsed laser deposition (PLD), and radio frequency magnetron sputtering.

[0017] Step 3: Prepare a hole transport layer by using, but not limited to, the doping method, chemical vapor deposition (CVD), physical vapor deposition (PVD), atomic layer deposition (ALD), sol-gel method, electrochemical deposition (ECD), spray pyrolysis, and hydrothermal / solvothermal method.

[0018] Step 4: Prepare the perovskite layer by, but not limited to, solution processing method, chemical vapor deposition method, ultrasonic assisted spray coating, roll-to-roll (R2R) manufacturing technology.

[0019] Step 5: Prepare the electron transport layer of mesoporous TiO2 by, but not limited to, sol-gel method, spin coating method, chemical vapor deposition (CVD), atomic layer deposition (ALD), spray pyrolysis method, hydrothermal / solvothermal method, chemical bath method.

[0020] Step 6: Prepare the buffer layer by, but not limited to, thermal evaporation method, magnetron sputtering method, ion beam sputtering method, spin coating method, chemical vapor deposition (CVD), atomic layer deposition (ALD), electrospray method, sol-gel method.

[0021] Step 7: Prepare the intermediate composite layer by, but not limited to, sputtering method.

[0022] Step 8: Prepare the hole transport layer by, but not limited to, doping method, chemical vapor deposition (CVD), physical vapor deposition (PVD), atomic layer deposition (ALD), sol-gel method, electrochemical deposition (ECD), spray pyrolysis method, hydrothermal / solvothermal method.

[0023] Step 9: Prepare the perovskite quantum dot layer by, but not limited to, thermal injection method, supersaturated recrystallization method, microwave assisted method, one-step spin coating method, anion exchange method, chemical vapor deposition method, metal-organic framework (MOF) confinement method, ultrasonic assisted method, template assisted method.

[0024] Step 10: Prepare the electron transport layer of mesoporous TiO2 by, but not limited to, sol-gel method, spin coating method, chemical vapor deposition (CVD), atomic layer deposition (ALD), spray pyrolysis method, hydrothermal / solvothermal method, chemical bath method.

[0025] Step 11: Prepare the transparent electrode by, but not limited to, chemical vapor deposition (CVD), sputtering, reactive ion plating, pyrolytic spraying, spin coating method, lithography technology, coating and dipping, laser etching, electroplating, self-assembly.

[0026] Step 12: Prepare the metal grid line electrode by, but not limited to, evaporation method. Description of the Drawings

[0027] Figure 1 It is a schematic structural diagram of the two-terminal quantum dot perovskite stacked solar cell described in the present invention.

[0028] Among them, 1 is the glass substrate, 2 is the ITO layer, 3 is the hole transport layer, 4 is the perovskite thin film layer, 5 is the electron transport layer, 6 is the buffer layer, 7 is the intermediate layer, 8 is the hole transport layer, 9 is the perovskite quantum dot layer, 10 is the electron transport layer, 11 is the buffer layer, 12 is the transparent electrode. Specific implementation solutions

[0029] To enable those skilled in the art to better understand the technical solutions of the present invention, the present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0030] See Figure 1 , where 1 is a glass substrate, 2 is an ITO layer, 3 is a hole transport layer, 4 is a perovskite thin film layer, 5 is an electron transport layer, 6 is a buffer layer, 7 is an intermediate layer, 8 is a hole transport layer, 9 is a perovskite quantum dot layer, 10 is an electron transport layer, 11 is a buffer layer, and 12 is a transparent electrode.

[0031] The glass substrate (1) is one or several of a lead silicate glass layer, a polymer layer, a bilayer structure composed of graphene oxide and graphite flakes, a three-layer mesoporous layer of titanium dioxide / zirconium oxide / carbon, a borosilicate glass, a quartz glass layer, a low-iron glass layer, a coated glass layer, a glass-ceramic layer, and a flexible glass layer, and the thickness ranges from 1 micron to 10 millimeters.

[0032] The transparent conductive film layer (2) is a transparent conductive oxide thin film, and the thickness is between 5 nanometers and 10 microns.

[0033] The hole transport layer (3) and the hole transport layer (8) are one or several of a self-assembled small molecule layer (SAM), an organic small molecule hole transport material spiro-OMeTAD, a conductive polymer poly(3,4-ethylenedioxythiophene) polystyrene sulfonate, metal oxide nickel oxide nanoparticles, two-dimensional material MoS2 (molybdenum disulfide) quantum dot / graphene hybrids, polyaniline (PANI), polythiophene (PTHT), titanium dioxide (TiO2), zinc oxide (ZnO), nickel oxide (NiO), carbon nanotubes (CNTs), and conductive MOFs, and the thickness is between 1 nanometer and 10 microns.

[0034] The perovskite thin film layer (4) has a structure of ABX3, where A is a monovalent cation, including but not limited to one or more of lithium (Li), sodium (Na), potassium (K), cesium (Cs), rubidium (Rb), amino group or amidino group; B is a divalent cation, including but not limited to one or more of silver (Ag), gold (Au), lead (Pb), zinc (Zn), gallium (Ga), selenium (Se), rhodium (Rh), germanium (Ge), tin (Sn), tungsten (W), copper (Cu), arsenic (As), palladium (Pd), thallium (TI), bismuth (Bi), indium (In), antimony (Sb), mercury (Hg), iridium (Ir); X is a monovalent anion, including but not limited to one or more of bromine (Br), iodine (I), chlorine (Cl) or astatine (At); the mixed perovskite is composed of two mixed cations, or two halogen anions occupy the X position, and the thickness ranges from 1 nanometer to 100 micrometers.

[0035] The electron transport layer (5), electron transport layer (10) is one or more of metal oxides TiO2 (titanium dioxide), SnO2 (tin dioxide), organic small molecule Spiro-OMeTAD (2,2',7,7'-tetrakis(4-methoxyphenyl)-9,9'-spirobifluorene), graphene / TiO2 nanoparticle composite, graphene, carbon nanotube doped TiO2, organic molecular material fullerene (C60, C70) and its derivatives, and the thickness ranges from 1 nanometer to 10 micrometers.

[0036] The buffer layer (6), buffer layer (11) is one or more of oxide alumina (Al2O3), silicon dioxide (SiO2), nitride silicon nitride (Si3N4), gallium nitride (GaN), carbide silicon carbide (SiC), metal titanium (Ti), molybdenum (Mo) and polymers polyimide PI, polymethyl methacrylate PMMA, Cu2O, NiO, TPBi, PEI, and the thickness ranges from 0.001 nanometer to 1000 nanometers.

[0037] The intermediate layer (7) is one or more of AZO (ZnO∶Al), FTO (SnO2∶F), ITO (In2O3∶Sn), Spiro-OMeTAD (2,2',7,7'-tetra[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene), PEDOT:PSS (poly(3,4-ethylenedioxythiophene) polystyrene sulfonate), TPBi (2,2',2'',2'''-tetrakis(4-fluorophenyl)-1,3,2-dioxolane), and the thickness ranges from 0.001 nanometer to 5 micrometers.

[0038] The perovskite quantum dots (9) are one or more of ABX3 (A = Cs, FA, MA or Rb, B = Pb, X = Cl, Br, I) quantum dots, non-lead perovskite quantum dots, and core-shell structured perovskite quantum dots; the thickness of the quantum dot layer is between 0.5 nanometers and 1000 nanometers.

[0039] The transparent electrode (12) is one or more of a transparent conductive film (TCO), graphene, carbon nanotubes (CNTs), the conductive polymer poly(3,4-ethylenedioxythiophene) (PEDOT:PSS), a metal grid, metal nanowires, a conductive oxide / metal composite material, and a conductive perovskite thin film, and the thickness is between 1 nanometer and 10 micrometers.

[0040] A method for preparing a perovskite quantum dot / perovskite thin film stacked solar cell, comprising the following steps: Step 1: Fabricate a glass substrate using, but not limited to, a melting method, a sintering method, chemical vapor deposition, or a glass through via (TGV) technique.

[0041] Step 2: Fabricate an ITO layer using, but not limited to, magnetron sputtering deposition, vacuum evaporation deposition, a sol-gel method, chemical vapor deposition (CVD), pulsed laser deposition (PLD), or radio frequency magnetron sputtering.

[0042] Step 3: Prepare a hole transport layer using, but not limited to, a doping method, chemical vapor deposition (CVD), physical vapor deposition (PVD), atomic layer deposition (ALD), a sol-gel method, electrochemical deposition (ECD), spray pyrolysis, or a hydrothermal / solvothermal method.

[0043] Step 4: Prepare a perovskite layer using, but not limited to, a solution treatment method, chemical vapor deposition, ultrasonic assisted spray coating, or roll-to-roll (R2R) manufacturing technology.

[0044] Step 5: Prepare an electron transport layer of a mesoporous TiO2 electron transport layer using, but not limited to, a sol-gel method, a spin coating method, chemical vapor deposition (CVD), atomic layer deposition (ALD), spray pyrolysis, a hydrothermal / solvothermal method, a chemical bath method.

[0045] Step 6: Prepare a buffer layer using, but not limited to, a thermal evaporation method, a magnetron sputtering method, an ion beam sputtering method, a spin coating method, chemical vapor deposition (CVD), atomic layer deposition (ALD), an electrospray method, or a sol-gel method.

[0046] Step 7: Prepare an intermediate composite layer using, but not limited to, a sputtering method.

[0047] Step 8: The hole transport layer is prepared by, but not limited to, doping method, chemical vapor deposition (CVD), physical vapor deposition (PVD), atomic layer deposition (ALD), sol-gel method, electrochemical deposition (ECD), spray pyrolysis method, hydrothermal / solvothermal method.

[0048] Step 9: The perovskite quantum dot layer is prepared by, but not limited to, thermal injection method, supersaturated recrystallization method, microwave-assisted method, one-step spin coating method, anion exchange method, chemical vapor deposition method, metal-organic framework (MOF) confinement method, ultrasonic-assisted method, template-assisted method.

[0049] Step 10: The electron transport layer of mesoporous TiO2 electron transport layer is prepared by, but not limited to, sol-gel method, spin coating method, chemical vapor deposition (CVD), atomic layer deposition (ALD), spray pyrolysis method, hydrothermal / solvothermal method, chemical bath method.

[0050] Step 11: The transparent electrode is prepared by, but not limited to, using chemical vapor deposition (CVD), sputtering, reactive ion plating, pyrolytic spraying, spin coating method, photolithography technology, coating and dipping, laser etching, electroplating, self-assembly.

[0051] Step 12: The metal grid line electrode is prepared by, but not limited to, using evaporation method.

[0052] The following is a more detailed description with more specific examples: In this example, the stacked perovskite solar cell is prepared by using the glass substrate / ITO layer / hole layer / perovskite thin film / electron transport layer / buffer layer / intermediate layer / hole layer / perovskite quantum dot / hole layer / buffer layer / transparent electrode structure from bottom to top.

[0053] The specific preparation process is as follows: NiO is sputter-deposited on ITO glass x layer as the hole transport layer. SAM is deposited on the NiO x layer as the hole transport layer; a perovskite layer CsFAMAPbI3 with a band gap of about 1.6 eV is spin-coated on the hole transport layer to complete the preparation of the perovskite thin film layer; then a C60 layer is deposited on the perovskite layer as the electron transport layer. A 20-nm SnO2 layer is added on the C60 layer by atomic layer deposition technology (ALD). A 1-nm Au and 10-nm NiO are deposited on the ALD SnO2 layer x, a SnO2 / Au / NiO composite layer is formed for use in a tandem device. CsPbBrI2 quantum dots are deposited on the NiO layer to form a perovskite quantum dot absorption layer with an energy of approximately 1.9 eV. A 25-nm C60 layer is deposited on the CsPbBrI2 quantum dots as the electron transport layer of the top cell; again, a 20-nm SnO2 layer is deposited by ALD technology as the buffer layer of the top cell; a 100-nm ITO layer is added on the ALD SnO2 buffer layer by magnetron sputtering technology, and the device area is defined as 0.09 cm² by the ITO area. Finally, the open-circuit voltage of the tandem cell is measured to be 1.87 V.

Claims

1. A perovskite quantum dot-perovskite thin film tandem solar cell, characterized in that: The perovskite quantum dot-perovskite thin film tandem solar cell includes a glass substrate (1), a transparent conductive film layer (2), a hole transport layer (3), a perovskite thin film (4), an electron transport layer (5), a buffer layer (6), an intermediate layer (7), a hole transport layer (8), perovskite quantum dots (9), an electron transport layer (10), a buffer layer (11), and a transparent electrode (12).

2. The perovskite quantum dot perovskite thin film tandem solar cell according to claim 1, wherein: The glass substrate (1) is one or more of a lead silicate glass layer, a polymer layer, a bilayer structure composed of graphene oxide and graphite flakes, a three-layer mesoporous layer of titanium dioxide / zirconium oxide / carbon, a borosilicate glass, a quartz glass layer, a low-iron glass layer, a coated glass layer, a glass-ceramic layer, and a flexible glass layer, and the thickness ranges from 1 micrometer to 10 millimeters.

3. The perovskite quantum dot perovskite thin film tandem solar cell according to claim 1, characterized in that: The transparent conductive film layer (2) is a transparent conductive oxide thin film with a thickness between 5 nanometers and 10 micrometers.

4. The perovskite quantum dot / perovskite thin film tandem solar cell according to claim 1, characterized in that: The hole transport layer (3) or the hole transport layer (8) is one or more of a self-assembled small molecule layer (SAM), an organic small molecule hole transport material spiro-OMeTAD, a conductive polymer poly(3,4-ethylenedioxythiophene) polystyrene sulfonate, metal oxide nickel oxide nanoparticles, a two-dimensional material MoS2 (molybdenum disulfide) quantum dot / graphene hybrids, polyaniline (PANI), polythiophene (PTHT), titanium dioxide (TiO2), zinc oxide (ZnO), nickel oxide (NiO), carbon nanotubes (CNTs), and conductive MOFs, and the thickness ranges from 1 nanometer to 10 micrometers.

5. The perovskite quantum dot perovskite thin film tandem solar cell according to claim 1, characterized in that: The perovskite thin film layer (4) has a structure of ABX3, where A is a monovalent cation: including but not limited to one or more of lithium (Li), sodium (Na), potassium (K), cesium (Cs), rubidium (Rb), an amino group, or an amidino group; B is a divalent cation: including but not limited to one or more of silver (Ag), gold (Au), lead (Pb), zinc (Zn), gallium (Ga), selenium (Se), rhodium (Rh), germanium (Ge), tin (Sn), tungsten (W), copper (Cu), arsenic (As), palladium (Pd), thallium (TI), bismuth (Bi), indium (In), antimony (Sb), mercury (Hg), and iridium (Ir); X is a monovalent anion: including but not limited to one or more of bromine (Br), iodine (I), chlorine (Cl), or astatine (At); the mixed perovskite is composed of two mixed cations, or two halogen anions occupy the X position, and the thickness ranges from 1 nanometer to 100 micrometers.

6. The perovskite quantum dot perovskite thin film tandem solar cell according to claim 1, wherein: The electron transport layer (5) or the electron transport layer (10) is one or more of metal oxides TiO2 (titanium dioxide), SnO2 (tin dioxide), an organic small molecule Spiro-OMeTAD (2,2',7,7'-tetrakis(4-methoxyphenyl)-9,9'-spirobifluorene), a graphene / TiO2 nanoparticle composite material, graphene, carbon nanotube-doped TiO2, and an organic molecular material fullerene (C60, C70) and its derivatives, and the thickness ranges from 1 nanometer to 10 micrometers.

7. The perovskite quantum dot perovskite thin film tandem solar cell according to claim 1, characterized in that: The buffer layers (6) and buffer layer (11) are one or more of aluminum oxide (Al2O3), silicon dioxide (SiO2), silicon nitride (Si3N4), gallium nitride (GaN), silicon carbide (SiC), titanium (Ti), molybdenum (Mo), polyimide PI, polymethyl methacrylate PMMA, Cu2O, NiO, TPBi, and PEI, and the thickness is between 0.001 nanometers and 1000 nanometers.

8. The perovskite quantum dot / perovskite thin film tandem solar cell according to claim 1, wherein: The intermediate layer (7) is one or several of AZO (ZnO∶Al), FTO (SnO2∶F), ITO (In2O3∶Sn), Spiro-OMeTAD (2,2',7,7'-tetrakis[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene), PEDOT:PSS (poly(3,4-ethylenedioxythiophene) polystyrene sulfonate), and TPBi (2,2',2'',2'''-tetrakis(4-fluorophenyl)-1,3,2-dioxolane), and the thickness is between 0.001 nanometers and 5 micrometers.

9. The perovskite quantum dot / perovskite thin film tandem solar cell according to claim 1, wherein: The perovskite quantum dot layer (9) is one or several of ABX3 (A = Cs, FA, MA, or Rb, B = Pb, X = Cl, Br, I) quantum dots, non-lead perovskite quantum dots, and core-shell structured perovskite quantum dots; the thickness of the quantum dot layer is between 0.5 nanometers and 1000 nanometers.

10. A method for preparing a perovskite quantum dot perovskite thin film stacked solar cell according to any one of claims 1-9, characterized in that, Including the following steps: Step 1: Fabricate a glass substrate by, but not limited to, the melting method, sintering method, vapor deposition, and glass through via (TGV) technology; Step 2: Fabricate an ITO layer by, but not limited to, magnetron sputtering deposition, vacuum evaporation deposition, sol-gel method, chemical vapor deposition (CVD), pulsed laser deposition (PLD), and radio frequency magnetron sputtering; Step 3: Prepare a hole transport layer by, but not limited to, doping method, chemical vapor deposition (CVD), physical vapor deposition (PVD), atomic layer deposition (ALD), sol-gel method, electrochemical deposition (ECD), spray pyrolysis, and hydrothermal / solvothermal method; Step 4: Prepare a perovskite layer by, but not limited to, solution processing method, vapor deposition method, ultrasonic assisted spray coating, and roll-to-roll (R2R) manufacturing technology; Step 5: Prepare an electron transport layer of mesoporous TiO2 electron transport layer by, but not limited to, sol-gel method, spin coating method, chemical vapor deposition (CVD), atomic layer deposition (ALD), spray pyrolysis, hydrothermal / solvothermal method, chemical bath method; Step 6: Prepare a buffer layer by, but not limited to, thermal evaporation method, magnetron sputtering method, ion beam sputtering method, spin coating method, chemical vapor deposition (CVD), atomic layer deposition (ALD), electrospraying method, and sol-gel method; Step 7: Prepare an intermediate composite layer by, but not limited to, using sputtering method; Step 8: Prepare a hole transport layer by, but not limited to, doping method, chemical vapor deposition (CVD), physical vapor deposition (PVD), atomic layer deposition (ALD), sol-gel method, electrochemical deposition (ECD), spray pyrolysis, and hydrothermal / solvothermal method; Step 9: Prepare the perovskite quantum dot layer by, but not limited to, hot injection method, oversaturation recrystallization method, microwave-assisted method, one-step spin coating method, anion exchange method, chemical vapor deposition method, metal-organic framework (MOF) confinement method, ultrasonic-assisted method, template-assisted method; Step 10: Prepare the electron transport layer of mesoporous TiO2 electron transport layer by, but not limited to, sol-gel method, spin coating method, chemical vapor deposition (CVD), atomic layer deposition (ALD), spray pyrolysis method, hydrothermal / solvothermal method, chemical bath method; Step 11: Prepare the transparent electrode by, but not limited to, using chemical vapor deposition (CVD), sputtering, reactive ion plating, pyrolytic spraying, spin coating method, photolithography technology, coating and dipping, laser etching, electrodeposition, self-assembly; Step 12: Prepare the metal grid line electrode by, but not limited to, using evaporation coating method.

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