Microwave plasma chemical vapor high-efficiency deposition device

Abstract

The invention discloses a microwave plasma chemical vapor phase efficient deposition device which comprises a main body, a microwave generator is arranged above the main body, a rotating shaft is installed at the bottom of the inner side of the main body, and a first bevel gear is fixed to the rotating shaft. By arranging the rotatable and inclined annular sample table, in the deposition process, the driving mechanism drives the rotating shaft, the vertical rod, the cross-shaped fixing frame and the annular sample table to rotate, so that all positions on the surface of a substrate material on the annular sample table can sequentially pass through different gas concentration areas and plasma environments; inconsistent deposition thickness caused by different local environments is avoided, insufficient or excessive supply of the active particles in some areas possibly caused by influence of gas flow on transmission of the active particles is avoided, the directional effect of the gas flow on deposition of the active particles can be disrupted by rotating the substrate, and the deposition thickness of the active particles is increased. The active particles are more uniformly deposited on the substrate, and the uniformity and consistency of the film are improved.

Description

Technical Field

[0001] The present invention relates to the technical field of plasma chemical vapor deposition, and particularly to a microwave plasma chemical vapor efficient deposition device. Background Art

[0002] A microwave plasma chemical vapor deposition system is a new thin film deposition technology that uses high-energy electrons and ions generated by microwave plasma to excite reactant molecules, enabling them to deposit and form a thin film on the surface of a substrate. It has broad application prospects and can be used to prepare optoelectronic devices, nanomaterials, electronic components, etc. In addition, it can also be used in fields such as surface modification, anti-corrosion, and coating. In the new energy field, the microwave plasma chemical vapor deposition system can also be used to prepare solar cells, fuel cells, etc.

[0003] During the deposition process, due to the possible uneven distribution of reaction gases in the deposition chamber and the non-uniform density and activity of the plasma in space, the deposition rate is relatively fast, and the film thickness is relatively large in the regions with high reaction gas concentration, high plasma density, and strong activity. In the opposite regions, the deposition rate is slow, and the film is thinner, ultimately resulting in uneven film thickness and affecting the performance and usage effect of the film. Summary of the Invention

[0004] The purpose of the present invention is to provide a microwave plasma chemical vapor efficient deposition device to solve the problem proposed in the above background art, that is, due to the possible uneven distribution of reaction gases in the deposition chamber and the non-uniform density and activity of the plasma in space, the deposition rate is relatively fast, and the film thickness is relatively large in the regions with high reaction gas concentration, high plasma density, and strong activity. In the opposite regions, the deposition rate is slow, and the film is thinner, ultimately resulting in uneven film thickness.

[0005] To achieve the above purpose, the present invention provides the following technical solution: A microwave plasma chemical vapor efficient deposition device, including a main body, A microwave generator is arranged above the main body, and the microwave generator is connected to the main body through a rectangular waveguide. A vacuum pumping device is also arranged on the top of the main body. A rotating shaft is installed at the inner bottom of the main body, and a vertical rod is fixed to the top of the rotating shaft. A bevel gear one is fixed to the rotating shaft, a cross-shaped fixing frame is fixed to the vertical rod, and an annular sample stage is sleeved outside the vertical rod. The bottom of the annular sample stage is connected to the cross-shaped fixing frame through a spring; A driving mechanism is arranged outside the main body, and the driving mechanism is used to drive the rotating shaft and the vertical rod to rotate; A gas output device is also arranged outside the main body.

[0006] In the above technical solution, the substrate can be placed on the annular sample stage for deposition operations. During the deposition process, the driving mechanism drives the rotation of the rotating shaft, the vertical rod, and the cross-shaped fixing frame. The cross-shaped fixing frame will drive the annular sample stage to rotate through the traction of the spring. By rotating the substrate, each position on the substrate surface can sequentially pass through different gas concentration regions and plasma environments, thereby averaging these differences and avoiding inconsistent deposition thickness caused by different local environments, enabling the film to grow uniformly on the substrate surface. Moreover, since gas flow will affect the transport of active particles, it may lead to insufficient or excessive supply of active particles in some regions. By rotating the substrate, the directional effect of the gas flow on the deposition of active particles can be disrupted, making the active particles deposit more uniformly on the substrate and improving the uniformity and consistency of the film.

[0007] Preferably, the driving mechanism includes a servo motor. The servo motor is installed outside the main body, and the output end of the servo motor is connected to the second bevel gear. The second bevel gear is installed inside the main body and meshes with the first bevel gear.

[0008] In the above technical solution, by driving the second bevel gear to rotate through the servo motor, the second bevel gear can drive the meshing first bevel gear to rotate, and drive the rotating shaft, the vertical rod, the cross-shaped fixing frame, and the annular sample stage to rotate horizontally.

[0009] Preferably, multiple groups of the cross-shaped fixing frames and the annular sample stages are provided, and they are vertically arranged at equal intervals. Multiple groups of the springs are provided, and they are arranged at equal intervals around the central axis of the annular sample stage.

[0010] In the above technical solution, the spring serves to pull the annular sample stage.

[0011] Preferably, a porous gas pipeline is provided on the inner wall of the main body, and the porous gas pipeline is connected to a gas output device.

[0012] In the above technical solution, the porous gas pipeline can increase the gas distribution space and improve the gas distribution uniformity.

[0013] Preferably, a sliding strip is provided at one end of the inner wall of the main body, and a number of groups of grooves are formed on the sliding strip. An annular sliding sleeve is fixed on the outer side of the annular sample stage, and one end of the annular sliding sleeve is located in the groove. A sliding groove is formed at one end of the inner wall of the main body, and the sliding groove is slidably connected to the sliding strip. An adjusting component is provided at the bottom inside the main body, and the adjusting component is used to drive the sliding strip to perform vertical reciprocating motion.

[0014] In the above technical solution, during the rotation of the annular sample stage, it will drive the annular sliding sleeve to rotate simultaneously. The adjusting component can drive the slide bar to move vertically back and forth. During this process, since one end of the annular sliding sleeve is located in the groove on the side of the slide bar, when the slide bar moves vertically back and forth, it will drive one end of the annular sliding sleeve to swing vertically. Also, since the annular sample stage is connected to the cross-shaped fixing frame through a spring, the elastic force of the spring can make the annular sample stage swing vertically. In this way, during the process of the annular sample stage driving the substrate to rotate, it can also drive the annular sample stage and the substrate to swing vertically back and forth. For some substrates with irregular shapes, this can adjust the relative position and angle between the substrate surface and the plasma and reaction gas, enabling the deposition process to better adapt to the shape of the substrate, ensuring uniform deposition on the entire substrate surface, and expanding the applicability of the equipment to different types of substrates.

[0015] Preferably, the adjusting component includes an eccentric disk. An eccentric column is fixed to the side of the eccentric disk, and the eccentric column is connected to the slide bar through a connecting rod. Both ends of the connecting rod are rotatably connected to the eccentric column and the slide bar. A rotating mechanism is also provided at the inner bottom of the main body, and the rotating mechanism is used to drive the eccentric disk to rotate.

[0016] In the above technical solution, the rotating mechanism can drive the eccentric disk to rotate. The eccentric disk will drive the eccentric column to rotate around the central axis of the eccentric disk. During this process, both ends of the connecting rod will rotate on the eccentric column and the slide bar respectively, thereby driving the slide bar to move vertically back and forth. The chute plays a role in guiding the slide bar vertically.

[0017] Preferably, the rotating mechanism includes a cross bar. One end of the cross bar is connected to the eccentric disk, and a third bevel gear is fixed to the other end of the cross bar. The third bevel gear meshes with the first bevel gear.

[0018] In the above technical solution, when the second bevel gear drives the first bevel gear, the rotating shaft, the vertical rod, the cross-shaped fixing frame, and the annular sample stage to rotate, the first bevel gear will simultaneously drive the third bevel gear and the cross bar to rotate, thereby causing the cross bar to drive the eccentric disk to rotate.

[0019] Compared with the prior art, the beneficial effect of the present invention is that this microwave plasma chemical vapor deposition device 1. By setting a rotatable and tiltable annular sample stage, during the deposition process, the drive mechanism drives the rotation shaft, vertical rod, cross-shaped fixing frame, and annular sample stage to rotate, enabling each position on the surface of the substrate material on the annular sample stage to sequentially pass through different gas concentration regions and plasma environments. This avoids inconsistent deposition thickness caused by different local environments. Moreover, since gas flow affects the transport of active particles and may lead to insufficient or excessive supply of active particles in certain regions, by rotating the substrate, the directional effect of the gas flow on the deposition of active particles can be disrupted, allowing the active particles to be deposited more uniformly on the substrate, improving the uniformity and consistency of the thin film. Additionally, for some substrates with irregular shapes, the tiltable design of the annular sample stage can adjust the relative position and angle between the substrate surface and the plasma and reaction gas, enabling the deposition process to better adapt to the shape of the substrate and ensuring uniform deposition on the entire substrate surface, thereby expanding the applicability of the equipment to different types of substrates. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 is a front view structural schematic diagram of the present invention; Figure 2 is a structural schematic diagram of the rotation shaft and vertical rod of the present invention; Figure 3 is a side view structural schematic diagram of the main body of the present invention; Figure 4 is of the present invention Figure 1 structural schematic diagram at position A; Figure 5 is a structural schematic diagram of the annular sample stage and annular sliding sleeve after tilting of the present invention.

[0021] In the figure: 1, main body; 2, microwave generator; 3, rectangular waveguide; 4, vacuum pumping device; 5, rotation shaft; 6, vertical rod; 7, first bevel gear; 8, cross-shaped fixing frame; 9, annular sample stage; 10, spring; 11, drive mechanism, 1101, servo motor, 1102, second bevel gear; 12, gas output device; 13, porous gas transmission pipe; 14, slide bar; 15, groove; 16, annular sliding sleeve; 17, sliding groove; 18, adjustment assembly, 1801, eccentric disc, 1802, eccentric column, 1803, connecting rod; 19, rotation mechanism, 1901, cross bar, 1902, third bevel gear. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0022] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0023] Please refer to Figures 1-5 , the present invention provides a technical solution: a high-efficiency microwave plasma chemical vapor deposition device. As shown in Figure 1 , Figure 2 , Figure 3 , Figure 4 and Figure 5 , a microwave generator 2 is arranged above the main body 1, and the microwave generator 2 is connected to the main body 1 through a rectangular waveguide 3. A vacuum pumping device 4 is also arranged on the top of the main body 1. A rotating shaft 5 is installed at the inner bottom of the main body 1, and a vertical rod 6 is fixed at the top of the rotating shaft 5. A first bevel gear 7 is fixed on the rotating shaft 5. A cross-shaped fixing frame 8 is fixed on the vertical rod 6. An annular sample stage 9 is sleeved outside the vertical rod 6. The bottom of the annular sample stage 9 is connected to the cross-shaped fixing frame 8 through a spring 10; A driving mechanism 11 is arranged outside the main body 1, and the driving mechanism 11 is used to drive the rotating shaft 5 and the vertical rod 6 to rotate; A gas output device 12 is also arranged outside the main body 1.

[0024] Specifically, a hatch door is arranged on the side of the main body 1, and a sealing gasket is arranged on the hatch door.

[0025] As shown in Figure 1 and Figure 2 , the driving mechanism 11 includes a servo motor 1101. The servo motor 1101 is installed outside the main body 1, and the output end of the servo motor 1101 is connected to a second bevel gear 1102. The second bevel gear 1102 is installed inside the main body 1, and the second bevel gear 1102 meshes with the first bevel gear 7.

[0026] As shown in Figure 1 , multiple groups of cross-shaped fixing frames 8 and annular sample stages 9 are provided, and they are arranged at equal intervals vertically. Multiple groups of springs 10 are provided, and they are arranged at equal intervals around the central axis of the annular sample stage 9.

[0027] As shown in Figure 1 , a porous gas delivery pipe 13 is arranged on the inner wall of the main body 1, and the porous gas delivery pipe 13 is connected to the gas output device 12.

[0028] As shown in Figure 1 , Figure 3 , Figure 4 and Figure 5 , a slide bar 14 is arranged at one end of the inner wall of the main body 1, and a plurality of groups of grooves 15 are formed in the slide bar 14. An annular sliding sleeve 16 is fixed outside the annular sample stage 9, and one end of the annular sliding sleeve 16 is located in the groove 15. A sliding groove 17 is formed at one end of the inner wall of the main body 1, and the sliding groove 17 is slidably connected to the slide bar 14. An adjusting component 18 is arranged at the inner bottom of the main body 1, and the adjusting component 18 is used to drive the slide bar 14 to move vertically in a reciprocating manner.

[0029] As shown in Figure 1 , Figure 4 and Figure 5 shown, the adjusting assembly 18 includes an eccentric disk 1801. An eccentric column 1802 is fixed to the side of the eccentric disk 1801, and the eccentric column 1802 is connected to the slide bar 14 through a connecting rod 1803. Both ends of the connecting rod 1803 are rotatably connected to the eccentric column 1802 and the slide bar 14. A rotating mechanism 19 is further provided at the inner bottom of the main body 1, and the rotating mechanism 19 is used to drive the eccentric disk 1801 to rotate.

[0030] As shown in Figure 1 , Figure 2 , Figure 4 and Figure 5 shown, the rotating mechanism 19 includes a cross bar 1901. One end of the cross bar 1901 is connected to the eccentric disk 1801, and a third bevel gear 1902 is fixed to the other end of the cross bar 1901. The third bevel gear 1902 meshes with the first bevel gear 7.

[0031] Working principle: During use, the substrate material with deposition can be evenly placed on the annular sample stage 9. Then, close the door of the main body 1 and turn on the vacuum pumping device 4 to evacuate the inside of the main body 1 to remove air and impurities. When the vacuum degree reaches a certain requirement, turn on the gas output device 12, and the porous gas pipeline 13 will introduce the reaction gas into the main body 1. After the reaction gas is introduced and reaches a stable state, turn on the microwave generator 2. The microwave energy will excite the reaction gas to ionize and form plasma. The plasma has high activity, and ions, atoms, free radicals, etc. in it will undergo processes such as adsorption, reaction, diffusion, and deposition on the substrate surface, thereby forming the required thin film, coating, or other deposition products on the substrate. During the deposition process, turn on the servo motor 1101 to drive the second bevel gear 1102 to rotate. The second bevel gear 1102 will drive the first bevel gear 7, the rotating shaft 5, the vertical rod 6, the cross-shaped fixing frame 8, and the annular sample stage 9 to rotate horizontally, so that each position on the substrate surface passes through different gas concentration regions and plasma environments in sequence, avoiding inconsistent deposition thickness caused by different local environments, enabling the thin film to grow evenly on the substrate surface. And because gas flow will affect the transport of active particles, it may lead to insufficient or excessive supply of active particles in some regions. By rotating the substrate, the directional effect of the gas flow on the deposition of active particles can be disrupted, making the active particles deposit more evenly on the substrate, improving the uniformity and consistency of the thin film. During the rotation of the first bevel gear 7, it will also drive the eccentric disk 1801 to rotate. The eccentric disk 1801 will drive the eccentric column 1802 to rotate around the central axis of the eccentric disk 1801. During this process, both ends of the connecting rod 1803 will rotate on the eccentric column 1802 and the slide bar 14 respectively, and drive the slide bar 14 to move vertically back and forth on the slide groove 17. Since one end of the annular sliding sleeve 16 is located in the groove 15 on the side of the slide bar 14, when the slide bar 14 moves vertically back and forth, it will drive one end of the annular sliding sleeve 16 to swing vertically. And because the annular sample stage 9 is connected to the cross-shaped fixing frame 8 through the spring 10, the elastic force of the spring 10 can make the annular sample stage 9 swing vertically. In this way, during the process of the annular sample stage 9 driving the substrate to rotate, it can also drive the annular sample stage 9 and the substrate to swing vertically back and forth. For some substrates with irregular shapes, this can adjust the relative position and angle between the substrate surface and the plasma and the reaction gas, enabling the deposition process to better adapt to the shape of the substrate and ensuring uniform deposition on the entire substrate surface, expanding the applicability of the equipment to different types of substrates.

[0032] This completes the entire operation, and the content not described in detail in this specification belongs to the prior art well-known to those skilled in the art.

[0033] The orientation or positional relationship indicated by terms such as "center", "longitudinal", "transverse", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. is based on the orientation or positional relationship shown in the drawings, and is only a simplified description for facilitating the description of the present invention, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus cannot be construed as a limitation on the protected content of the present invention.

[0034] Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements for some of the technical features. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A high-efficiency microwave plasma chemical vapor deposition device, comprising a main body (1), characterized in that: A microwave generator (2) is arranged above the main body (1), and the microwave generator (2) is connected to the main body (1) through a rectangular waveguide (3). A vacuum pumping device (4) is also arranged at the top of the main body (1). A rotating shaft (5) is installed at the inner bottom of the main body (1), and a vertical rod (6) is fixed to the top of the rotating shaft (5). A first bevel gear (7) is fixed to the rotating shaft (5). A cross-shaped fixing frame (8) is fixed to the vertical rod (6), and an annular sample stage (9) is sleeved outside the vertical rod (6). The bottom of the annular sample stage (9) is connected to the cross-shaped fixing frame (8) through a spring (10); A driving mechanism (11) is arranged outside the main body (1), and the driving mechanism (11) is used to drive the rotating shaft (5) and the vertical rod (6) to rotate; A gas output device (12) is also arranged outside the main body (1).

2. The high-efficiency microwave plasma chemical vapor deposition device according to claim 1, wherein: The driving mechanism (11) includes a servo motor (1101). The servo motor (1101) is installed outside the main body (1), and the output end of the servo motor (1101) is connected to a second bevel gear (1102). The second bevel gear (1102) is installed inside the main body (1), and the second bevel gear (1102) meshes with the first bevel gear (7).

3. The microwave plasma chemical vapor high-efficiency deposition device according to claim 1, wherein: Both the cross-shaped fixing frame (8) and the annular sample stage (9) are provided with multiple groups, and they are vertically arranged at equal intervals. Multiple groups of springs (10) are provided, and they are arranged at equal intervals around the central axis of the annular sample stage (9).

4. A high-efficiency microwave plasma chemical vapor deposition device according to claim 1, characterized in that: A porous gas delivery pipe (13) is arranged on the inner wall of the main body (1), and the porous gas delivery pipe (13) is connected to the gas output device (12).

5. A high-efficiency microwave plasma chemical vapor deposition device according to claim 1, characterized in that: A sliding strip (14) is arranged at one end of the inner wall of the main body (1), and a number of groups of grooves (15) are formed on the sliding strip (14). An annular sliding sleeve (16) is fixed to the outside of the annular sample stage (9), and one end of the annular sliding sleeve (16) is located in the groove (15). A sliding groove (17) is formed at one end of the inner wall of the main body (1), and the sliding groove (17) is slidably connected to the sliding strip (14). An adjusting component (18) is arranged at the inner bottom of the main body (1), and the adjusting component (18) is used to drive the sliding strip (14) to move vertically in a reciprocating manner.

6. The high-efficiency microwave plasma chemical vapor deposition device according to claim 5, characterized in that: The adjusting component (18) includes an eccentric disc (1801). An eccentric column (1802) is fixed to the side of the eccentric disc (1801), and the eccentric column (1802) is connected to the sliding strip (14) through a connecting rod (1803). Both ends of the connecting rod (1803) are rotatably connected to the eccentric column (1802) and the sliding strip (14). A rotating mechanism (19) is also arranged at the inner bottom of the main body (1), and the rotating mechanism (19) is used to drive the eccentric disc (1801) to rotate.

7. The high-efficiency microwave plasma chemical vapor deposition device according to claim 6, characterized in that: The rotation mechanism (19) includes a cross bar (1901), one end of the cross bar (1901) is connected to an eccentric disc (1801), and a third bevel gear (1902) is fixed to the other end of the cross bar (1901), and the third bevel gear (1902) meshes with the first bevel gear (7).

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