Atomic force microscope probe and magnetic measurement calibration method

Abstract

This application relates to an atomic force microscope probe and a magnetic measurement calibration method. The atomic force microscope probe includes a probe arm, one end of which is provided with a magnetic tunnel junction and a needle tip. The magnetic tunnel junction includes a first magnetic tunnel junction disposed between the probe arm and the needle tip, and a second magnetic tunnel junction disposed adjacent to the first magnetic tunnel junction. This method can reduce detection time and improve detection efficiency.

Description

Technical Field

[0001] The present application relates to the technical field of atomic force microscopy, and in particular to an atomic force microscopy probe and a magnetic measurement correction method. Background Art

[0002] An atomic force microscope (AFM) is a device that detects the morphology and physical properties of material surfaces at the atomic and molecular scales based on the atomic forces between the probe tip and the target object. It can be used to study a variety of materials including metals, semiconductors, and insulators.

[0003] In the traditional magnetic force microscope mode, during the measurement process, the sample surface needs to be scanned twice, respectively to detect and record the sample surface morphology. Then, based on the known sample surface morphology, a lifting mode is adopted to separate the probe from the sample surface and maintain a certain distance. The magnetic detection of the sample is achieved by detecting the changes in the amplitude and / or phase of the probe under the influence of the sample's magnetic force.

[0004] It can be seen that since two scans are required to obtain the magnetism of the target object, the current magnetic detection still has the problems of long detection time and low efficiency. Summary of the Invention

[0005] Based on this, it is necessary to provide an atomic force microscope probe and magnetic measurement correction method that can reduce detection time and improve detection efficiency to address the above technical problems.

[0006] In the first aspect, the present application provides an atomic force microscope probe, which includes a probe arm, one end of which is provided with a magnetic tunnel junction and a needle tip; the magnetic tunnel junction includes a first magnetic tunnel junction arranged between the probe arm and the needle tip, and a second magnetic tunnel junction arranged adjacent to the first magnetic tunnel junction.

[0007] In one embodiment, the easy magnetization axis of the first magnetic tunnel junction is arranged along the extending direction of the needle tip.

[0008] In one embodiment, the easy magnetization axes of the first magnetic tunnel junction and the second magnetic tunnel junction are perpendicular to each other.

[0009] In a second aspect, the present application provides a magnetic measurement correction method, which is applied to an atomic force microscope, wherein the atomic force microscope includes the atomic force microscope probe as described above, and the magnetic measurement correction method includes:

[0010] Acquiring temperature mapping relationship information of the magnetic tunnel junction at different temperatures and magnetic field intensities;

[0011] When the needle tip is close to the target object, obtaining a first resistance of the first magnetic tunnel junction;

[0012] The magnetism of the target object is calculated based on the current ambient temperature, the temperature mapping relationship information, and the first resistance of the first magnetic tunnel junction; the current ambient temperature is determined based on the second magnetic tunnel junction.

[0013] In one embodiment, obtaining temperature mapping relationship information of the magnetic tunnel junction at different temperatures and magnetic field intensities includes:

[0014] Based on a plurality of preset temperature values ​​and a plurality of preset magnetic field strengths, sequentially applying a magnetic field and adjusting the temperature to the easy magnetization axis of the magnetic tunnel junction to obtain a voltage and / or current of the magnetic tunnel junction corresponding to each preset temperature value and each preset magnetic field strength;

[0015] determining, based on the voltage and / or current, a resistance of the magnetic tunnel junction corresponding to each preset temperature value and each preset magnetic field strength;

[0016] Based on the multiple preset temperature values, the multiple preset magnetic field strengths, and the multiple resistors, temperature mapping relationship information of the magnetic tunnel junction at different temperatures and magnetic field strengths is generated.

[0017] In one embodiment, at least one preset temperature value is greater than a maximum operating temperature of the atomic force microscope probe, and / or at least one preset temperature value is less than a minimum operating temperature of the atomic force microscope probe.

[0018] In one embodiment, the process of determining the current ambient temperature includes:

[0019] Before obtaining the first resistance of the first magnetic tunnel junction and / or after obtaining the first resistance of the first magnetic tunnel junction, applying a magnetic field to the easy axis of the second magnetic tunnel junction based on a preset magnetic field strength to obtain a second resistance corresponding to the second magnetic tunnel junction;

[0020] Obtaining a mapping temperature corresponding to the preset magnetic field strength and the second resistance by mapping the relationship information among the preset magnetic field strength, the second resistance, and the temperature;

[0021] Based on the mapped temperature, a current ambient temperature is determined.

[0022] In one embodiment, the magnetic field applied to the easy magnetization axis of the second magnetic tunnel junction includes a forward magnetic field and a reverse magnetic field; the process of determining the current ambient temperature also includes: based on a preset acquisition rule, multiple acquisitions of the second resistance corresponding to the second magnetic tunnel junction; mapping the preset magnetic field strength, the second resistance and the temperature relationship information to obtain multiple mapping temperatures corresponding to the preset magnetic field strength and the second resistance respectively; and determining the current ambient temperature based on the multiple mapping temperatures.

[0023] In one embodiment, the resistance of the first magnetic tunnel junction is determined based on the voltage and / or current of the first magnetic tunnel junction; the resistance of the second magnetic tunnel junction is determined based on the voltage and / or current of the second magnetic tunnel junction.

[0024] In one embodiment, the calculating the magnetism of the target object based on the current ambient temperature, the temperature mapping relationship information, and the first resistance of the first magnetic tunnel junction includes:

[0025] Calculating a leakage magnetic field of the first magnetic tunnel junction corresponding to the target object based on the current ambient temperature, the temperature mapping relationship information, and a first resistance of the first magnetic tunnel junction;

[0026] The magnetism of the target object is determined based on the leakage magnetic field.

[0027] In one embodiment, when the needle tip approaches the target object, obtaining the first resistance of the first magnetic tunnel junction includes:

[0028] When the needle tip approaches the target object, the easy magnetization axis of the first magnetic tunnel junction extends toward the target object, and the easy magnetization axis of the second magnetic tunnel junction is parallel to the target object, a first resistance of the first magnetic tunnel junction is obtained.

[0029] The above-mentioned atomic force microscope probe and magnetic measurement correction method are provided with a magnetic tunnel junction and a needle tip at one end of the probe arm; the magnetic tunnel junction includes a first magnetic tunnel junction arranged between the probe arm and the needle tip, and a second magnetic tunnel junction arranged adjacent to the first magnetic tunnel junction. It can not only effectively capture the surface morphology of the target object and reduce the detection time, but also the second magnetic tunnel junction is used to correct the first magnetic tunnel junction, which can reduce the detection error of the first magnetic tunnel and improve the detection accuracy of the first magnetic tunnel junction on the magnetism of the target object, thereby achieving the effect of reducing the detection time and improving the detection efficiency while ensuring the accuracy. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Figure 1 is a schematic diagram of the interior of an atomic force microscope probe according to one embodiment;

[0031] Figure 2 is a schematic structural diagram of an atomic force microscope probe in one embodiment;

[0032] Figure 3 is a schematic diagram of the interior of an atomic force microscope probe in another embodiment;

[0033] Figure 4 Schematic diagram of a flow chart of a magnetic measurement correction method in one embodiment. DETAILED DESCRIPTION

[0034] In order to make the purpose, technical solutions and advantages of this application more clear, the following further describes this application in detail with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain this application and are not intended to limit this application.

[0035] In one embodiment, Figure 1 and Figure 2 As shown, an atomic force microscope probe is provided, which includes a probe arm 1, one end of which is provided with a magnetic tunnel junction 12 and a needle tip 11; the magnetic tunnel junction 12 includes a first magnetic tunnel junction 121 arranged between the probe arm 1 and the needle tip 11, and a second magnetic tunnel junction 122 arranged adjacent to the first magnetic tunnel junction 121.

[0036] The probe arm 1 provides mechanical support for the needle tip 11 and the magnetic tunnel junction 12. Exemplarily, the probe arm 1 is made of materials such as silicon and silicon nitride. The needle tip 11 is a tiny tip that directly contacts or approaches the surface of a target object, generating an interaction force with the target object to detect its topography. Exemplary materials for the needle tip 11 include diamond, silicon oxide, or metal.

[0037] Furthermore, the probe arm 1 may be provided with an extension section and a fixed end, the fixed end is used to connect the probe arm 1 to a fixed structure of the probe arm 1 , and the extension end is provided with a needle tip 11 and a magnetic tunnel junction 12 .

[0038] The magnetic tunnel junction 12 may be a sensor including a multi-layer thin film structure. For example, the magnetic tunnel junction 12 may include a reference layer with a fixed magnetization direction, a free magnetization layer, and an insulating layer sandwiched between the reference layer and the free magnetization layer.

[0039] In this embodiment, the magnetic tunnel junction 12 includes two types of magnetic tunnel junctions 12, namely a first magnetic tunnel junction 121 and a second magnetic tunnel junction 122. Among them, the first magnetic tunnel junction 121 is a sensor located between the probe arm 1 and the needle tip 11, and is used to detect the leakage magnetic field of the target object when an interaction force is generated between the needle tip 11 and the target object, so that the magnetism of the target object can be detected while the morphology of the target object is detected. The second magnetic tunnel junction 122 can be a sensor arranged in the direction of the probe arm 1 away from or close to the needle tip 11 and adjacent to the first magnetic tunnel junction 121, and is used to correct the first magnetic tunnel junction, thereby reducing the error of the detection of the first magnetic tunnel junction and improving the detection accuracy of the magnetism of the target object by the first magnetic tunnel junction. The second magnetic tunnel junction 122 is arranged at a position close to the first magnetic tunnel junction 121 of the probe arm 1 so that the temperatures of the two are similar or the same, thereby ensuring the correction effect of the detection signal / result of the first magnetic tunnel junction 121.

[0040] It is understood that in order to detect the topography of the target object, it is necessary to generate an interaction force between the needle tip 11 and the target object, and accordingly, the needle tip 11 needs to extend outside the probe arm 1. The needle tip 11 can be integrally formed with the probe arm 1, or the needle tip 11 can be formed on the probe arm 1.

[0041] In an exemplary embodiment, if Figure 1 The figure shows a structure in which a needle tip is formed on a probe arm, wherein the probe arm 1 is provided with a base layer 13, which is capable of supporting at least a magnetic tunnel junction 12 and a needle tip 11. The needle tip 11 is provided on one side of the base layer 13, and a first magnetic tunnel junction 121 is provided between the base layer 13 and the needle tip 11, so that the first magnetic tunnel junction 121 is as close to the needle tip 11 as possible, and so that the first magnetic tunnel junction 121 is as close to the target object as possible. The needle tip 11 can be formed on the base layer 13, or on the base layer 13 and the magnetic tunnel junction 12, or the needle tip 11 can be formed on the magnetic tunnel junction 12, so that the needle tip 11 is provided on the probe arm 1.

[0042] An atomic force microscope probe provided in this embodiment is provided with a magnetic tunnel junction and a needle tip at one end of the probe arm; the magnetic tunnel junction includes a first magnetic tunnel junction arranged between the probe arm and the needle tip, and a second magnetic tunnel junction arranged adjacent to the first magnetic tunnel junction. It can not only effectively capture the surface morphology of the target object and reduce the detection time, but also the second magnetic tunnel junction is used to correct the first magnetic tunnel junction, which can reduce the detection error of the first magnetic tunnel junction and improve the detection accuracy of the first magnetic tunnel junction on the magnetism of the target object, thereby achieving the effect of reducing the detection time and improving the detection efficiency while ensuring the accuracy.

[0043] In one embodiment, the easy magnetization axis of the first magnetic tunnel junction is arranged along the extending direction of the needle tip.

[0044] The easy magnetization axis can be the physical direction in which the magnetic moment arrangement in the magnetic material is easily flipped or oriented. The easy magnetization axis of the first magnetic tunnel junction is arranged along the extension direction of the needle tip, which can improve the magnetic tunnel junction's directional response to leakage magnetic fields in specific directions, especially its sensitivity to the poloidal leakage magnetic field of the target object, thereby enabling the detection of the target object's poloidal magnetism.

[0045] Furthermore, the extension direction setting can be similar to the extension direction of the needle tip, and there can be a certain angle difference between the two. It is only necessary that the actual angle is similar to the extension direction of the needle tip, and the first magnetic tunnel junction can be sensitive to the polar leakage magnetic field of the target object and can be used for detection.

[0046] For example, the direction of lowest magnetic anisotropy in the free layer of the first magnetic tunnel junction can be at an angle close to or parallel to the axial direction of the needle tip (e.g., within 15 degrees), thereby ensuring that the external vertical leakage magnetic field can maximize the change in the deflection angle of the free layer magnetic moment. When the target object has a vertically upward magnetization intensity on its surface, the generated leakage magnetic field gradient will drive the free layer magnetic moment to deflect along the easy magnetization axis, thereby amplifying the amplitude of the change in the tunneling current.

[0047] An atomic force microscope probe provided in this embodiment can form a better response angle by aligning the easy magnetization axis of the first magnetic tunnel junction with the axial direction of the needle tip. By using the signal correction of the adjacent second magnetic tunnel junction, the probe can directionally enhance the sensitivity to the vertical leakage magnetic field and suppress environmental interference. It can achieve the technical effect of synchronously acquiring sample morphology and vertical magnetic distribution data in a single scan, and significantly improving the signal-to-noise ratio and detection accuracy.

[0048] In one embodiment, the easy magnetization axes of the first magnetic tunnel junction and the second magnetic tunnel junction are perpendicular to each other.

[0049] The perpendicularity of the easy magnetization axes can be achieved by forming a 90-degree angle between the magnetic anisotropy directions of the two magnetic tunnel junctions. Due to the spatial orthogonality of the magnetic field sensitivity directions of the two magnetic tunnel junctions, the output signals of the two magnetic tunnel junctions do not interfere with each other, achieving signal independence.

[0050] The atomic force microscope probe provided in this embodiment forms a vertical spatial layout of the easy magnetization axes of the first and second magnetic tunnel junctions, and achieves physical isolation of magnetic coupling interference between sensors through orthogonal sensitive directions, thereby significantly improving the signal-to-noise ratio and anti-interference ability of the probe in complex environments, achieving the technical effect of improving the signal-to-noise ratio and detection accuracy.

[0051] In order to more clearly illustrate the structure of the atomic force microscope probe of the present application, the applicant also provides a detailed embodiment.

[0052] In one embodiment, Figure 1 and Figure 2 As shown, the probe arm 1 of the probe of the atomic force microscope is provided with an extension end 1a and a fixed end 1b. The fixed end 1b is used to connect the probe arm 1 to a fixed structure of the probe arm 1. In some cases, the fixed structure of the probe arm 1 can be a bracket of the probe arm 1 or an external device. Figure 1 The extended end 1a of the probe arm 1 of the probe is provided with a needle tip 11 and a magnetic tunnel junction 12. The needle tip 11 is used to generate an interaction force with the target object so as to detect the morphology of the target object. The magnetic tunnel junction 12 includes a first magnetic tunnel junction 121 and a second magnetic tunnel junction 122. The first magnetic tunnel junction 121 is provided between the needle tip 11 and the probe arm 1 and is used to detect the leakage magnetic field of the target object when an interaction force is generated between the needle tip 11 and the target object. Thus, while detecting the morphology of the target object, the leakage magnetic field of the target object is detected through the first magnetic tunnel junction 121 to detect the magnetism of the target object. The second magnetic tunnel junction 122 is provided at a position of the probe arm 1 close to the first magnetic tunnel junction 121 to correct the first magnetic tunnel junction 121, thereby reducing the detection error of the first magnetic tunnel junction 121 and improving the detection accuracy of the first magnetic tunnel junction 121 on the magnetism of the target object.

[0053] It is understood that in order to detect the morphology of the target object, it is necessary to generate an interaction force between the needle tip 11 and the target object. Accordingly, the needle tip 11 can be extended to the outside of the probe arm 1. The needle tip 11 is fixed to the extended end 1a of the probe arm 1. The needle tip 11 can be located at the extended end 1a of the probe arm 1 and fixed to the probe arm 1. The needle tip 11 and the probe arm 1 can be integrally formed, or the needle tip 11 can be formed on the probe arm 1. Figure 1 , shows a form in which a needle tip 11 is formed on a probe arm 1, wherein the probe arm 1 is provided with a base layer 13, which is capable of supporting at least a magnetic tunnel junction 12 and the needle tip 11; the needle tip 11 is disposed on one side of the base layer 13, and a first magnetic tunnel junction 121 is disposed between the base layer 13 and the needle tip 11, so that the first magnetic tunnel junction 121 is as close to the needle tip 11 as possible, and so that the first magnetic tunnel junction 121 is as close to the target object as possible. The needle tip 11 can be formed on the base layer 13, or on the base layer 13 and the magnetic tunnel junction 12, or the needle tip 11 can be formed on the magnetic tunnel junction 12, so that the needle tip 11 is disposed on the probe arm 1.

[0054] The second magnetic tunnel junction 122 is disposed at a position of the probe arm 1 close to the first magnetic tunnel junction 121 so that the temperatures of the two are similar or the same, thereby ensuring a correction effect on the detection signal / result of the first magnetic tunnel junction 121 .

[0055] The easy magnetization axis of the first magnetic tunnel junction 121 is arranged along the extension direction of the needle tip 11, so that the first magnetic tunnel junction 121 can be sensitive to the polar leakage magnetic field of the target object and detect the polar magnetism of the target object. Specifically, the easy magnetization axis of the first magnetic tunnel junction 121 is arranged along the extension direction of the needle tip 11. The easy magnetization axis can be similar in the extension direction of the needle tip 11, and there can be a certain angle difference between the two. As long as the first magnetic tunnel junction 121 can detect the polar leakage magnetic field of the target object, it is not necessary for the easy magnetization axis to be coaxial with the extension direction of the needle tip 11.

[0056] Optionally, the easy magnetization axes of the first magnetic tunnel junction 121 and the second magnetic tunnel junction 122 may be configured to be perpendicular to each other to avoid mutual interference therebetween while facilitating providing a magnetic field to the second magnetic tunnel junction 122 for correction.

[0057] See also Figure 1 In some cases, the first magnetic tunnel junction 121 and the second magnetic tunnel junction 122 can be formed on the base layer 13, the needle tip 11 can be formed on the first magnetic tunnel junction 121, and a covering layer 14 can be provided on the base layer 13 to further fix the first magnetic tunnel junction 121, the second magnetic tunnel junction 122, and the needle tip 11.

[0058] See also Figure 3 , shows a schematic diagram of the extension end 1a from another perspective in one embodiment. The needle tip 11 protrudes from the probe arm 1, the first magnetic tunnel junction 121 is set at the bottom of the needle tip 11 and is covered by the needle tip 11, and a small gap is left between the second magnetic tunnel junction 122 and the needle tip 11. In some cases, the directions of the first magnetic tunnel junction 121 and the second magnetic tunnel junction 122 can be set to meet the setting of the corresponding easy magnetization axis, for example, Figure 1 The figure shows a configuration in which the easy magnetization axis of the first magnetic tunnel junction 121 is substantially aligned with the extension direction of the needle tip, and the easy magnetization axis of the second magnetic tunnel junction 122 is perpendicular to the easy magnetization axis of the first magnetic tunnel junction 121. Based on the solution of the present application, specific configurations of the corresponding magnetic tunnel junctions 12 can be set as needed to meet specific requirements.

[0059] Optionally, a lead of the magnetic tunnel junction 12 may be provided to electrically connect an external device to the magnetic tunnel junction 12 , so as to detect signals such as the resistance of the magnetic tunnel junction 12 .

[0060] Based on the same inventive concept, the present application also provides a magnetic measurement calibration method for an atomic force microscope using the aforementioned probe. The solution provided by this method is similar to the solution described in the aforementioned probe. Therefore, the specific limitations in the embodiments of one or more magnetic measurement calibration methods provided below can be found in the above-mentioned limitations on the atomic force microscope probe and will not be further elaborated here.

[0061] In one embodiment, Figure 4 As shown, a magnetic measurement correction method is provided, which is applied to an atomic force microscope. The atomic force microscope includes the atomic force microscope probe in any of the above embodiments. The magnetic measurement correction method includes:

[0062] Step S100: obtaining temperature mapping relationship information of a magnetic tunnel junction under different temperatures and magnetic field intensities.

[0063] Among them, the resistance value of the magnetic tunnel junction will change with the changes in the external magnetic field and temperature. The temperature mapping relationship information can be a mathematical model that describes the correspondence between the resistance of the magnetic tunnel junction and the temperature and magnetic field strength, which can be obtained by gradually changing the temperature and applying different magnetic field strengths in a controlled experimental environment and measuring the resistance value. Exemplarily, the temperature mapping relationship information can include a temperature response curve or a parameter equation based on theoretical calculations, which can provide benchmark parameters for subsequent magnetic calculations, enabling the system to reversely infer the magnetic field strength based on the real-time resistance value.

[0064] Step S200 : When the needle tip approaches the target object, a first resistance of the first magnetic tunnel junction is obtained.

[0065] The needle tip is used to scan the surface of a target object at a nanometer-scale distance. The target object can be a material sample whose magnetism needs to be detected. It is understood that the resistance of the first magnetic tunnel junction changes due to proximity to the magnetic region of the target object, and this change is directly related to the local magnetic field strength of the target object.

[0066] The first resistance can be obtained by moving the probe to the vicinity of the surface of the target object, maintaining a nanometer-level distance between the probe tip and the surface of the object through scanning control, and monitoring the resistance value in real time.

[0067] Step S300 : calculating the magnetism of the target object based on the current ambient temperature, the temperature mapping relationship information, and the first resistance of the first magnetic tunnel junction.

[0068] The current ambient temperature is determined based on the second magnetic tunnel junction. Further, the current ambient temperature can be a temperature value obtained by inversely calculating the resistance value of the second magnetic tunnel junction.

[0069] The second magnetic tunnel junction is positioned adjacent to the first magnetic tunnel junction on the probe arm, with its easy axis perpendicular to the first magnetic tunnel junction. This ensures that its resistance change is primarily affected by ambient temperature rather than the magnetic field of the target object. For example, the easy axis of the second magnetic tunnel junction is positioned along the plane of the probe arm, while the easy axis of the first magnetic tunnel junction is positioned along the direction of extension of the probe tip.

[0070] Furthermore, the current ambient temperature can be determined by inferring the current ambient temperature value based on the real-time resistance value of the second magnetic tunnel junction combined with pre-established temperature mapping relationship information; the current ambient temperature value and the resistance value of the first magnetic tunnel junction are input into the temperature mapping relationship model, and through mathematical calculations, the influence of the ambient temperature on the resistance value can be eliminated, and the resistance change caused by the magnetic field of the target object can be separated. Based on the correspondence between the magnetic field and the resistance change, the magnetic parameters of the target object, such as magnetization intensity or magnetic domain distribution, are calculated.

[0071] A magnetic measurement correction method provided in this embodiment obtains the mapping relationship of the magnetic tunnel junction under different temperatures and magnetic fields, obtains the first resistance by close-range scanning between the needle tip and the target object, and calculates the magnetic parameters based on the temperature compensation mechanism of the second magnetic tunnel junction. Through the structure of the dual magnetic tunnel junction probe, the magnetic and temperature measurements can be completed simultaneously, the interference of temperature fluctuations on the magnetic measurement is eliminated, and the morphological displacement error caused by two scans in the traditional method is avoided. At the same time, compared with the traditional technology, there is no need to separate the probe for lifting scanning, thereby enhancing the accuracy and reliability of the measurement results while achieving the effect of reducing the detection time and improving the detection efficiency.

[0072] In one embodiment, obtaining temperature mapping relationship information of a magnetic tunnel junction at different temperatures and magnetic field intensities includes:

[0073] Based on multiple preset temperature values ​​and multiple preset magnetic field strengths, sequentially applying a magnetic field and adjusting the temperature to the easy magnetization axis of the magnetic tunnel junction to obtain a voltage and / or current of the magnetic tunnel junction corresponding to each preset temperature value and each preset magnetic field strength;

[0074] determining, based on the voltage and / or the current, a resistance of the magnetic tunnel junction corresponding to each preset temperature value and each preset magnetic field strength;

[0075] Based on multiple preset temperature values, multiple preset magnetic field strengths, and multiple resistors, temperature mapping relationship information of the magnetic tunnel junction at different temperatures and magnetic field strengths is generated.

[0076] The preset temperature values ​​can be discrete temperature points pre-set during the experiment that cover the material's operating temperature range. For example, temperature regulation can be achieved using a temperature control system (such as a temperature-controlled box or heating / cooling device). In one exemplary embodiment, the preset temperature values ​​can include a temperature sequence from 20°C to 80°C set in 5°C intervals. It is understood that other temperature ranges covering the probe's operating temperature range and other applicable temperature intervals can also be used, and these are not detailed here.

[0077] The preset magnetic field strength can be a discrete magnetic field value covering the target detection magnetic field range, and the strength can be controlled by an external magnetic field generator (such as an electromagnetic coil or a permanent magnet array). The applied magnetic field can be precisely controlled by the magnetic field generator in terms of direction and strength, ensuring that the magnetic field direction is aligned with the easy axis of the magnetic tunnel junction. For example, when the easy axis of the magnetic tunnel junction is along the direction of the needle tip extension, the magnetic field direction can be parallel to this axis.

[0078] The voltage and / or current of the magnetic tunnel junction may be electrical response parameters of the magnetic tunnel junction under specific temperature and magnetic field conditions, and may be measured, for example, by an electrical measuring device (eg, a precision voltmeter or ammeter).

[0079] The resistance of a magnetic tunnel junction can be calculated using Ohm's law. When a magnetic tunnel junction exhibits nonlinear characteristics (e.g., voltage and current are not proportional), the equivalent resistance can be calculated by repeatedly measuring current at different voltages to plot a volt-ampere characteristic curve and avoid error accumulation.

[0080] The temperature mapping relationship information can be a mathematical model or data set that characterizes the law of change of the magnetic tunnel junction resistance with the joint change of temperature and magnetic field. For example, different temperatures, magnetic fields and corresponding resistances can be organized into a three-dimensional data set. Furthermore, it can be combined with interpolation algorithms or regression analysis to construct a parametric equation or non-parametric model.

[0081] This embodiment provides a magnetic measurement correction method that measures the resistance of a magnetic tunnel junction under discrete temperature and magnetic field conditions and integrates the discrete data into a parameterized model. This method can accurately reflect how the resistance of the magnetic tunnel junction changes with temperature and magnetic field, provide high-confidence benchmark parameters for magnetic calculations, and effectively reduce measurement deviations caused by temperature fluctuations or nonlinear characteristics of the magnetic field, thereby improving detection resolution and anti-interference capabilities.

[0082] In one embodiment, at least one of the preset temperature values ​​is greater than a maximum operating temperature of the atomic force microscope probe, and / or at least one of the preset temperature values ​​is less than a minimum operating temperature of the atomic force microscope probe.

[0083] The extended range of the preset temperature value may be a temperature interval determined based on prior knowledge and the operating temperature of the probe.

[0084] For example, the extended range of the preset temperature value includes temperature values ​​above the tolerance limit of the probe material or below its lower operating limit. By covering a wider temperature range to obtain a data set of resistance magnetic field temperature, the comprehensiveness of the temperature mapping relationship information can be further improved.

[0085] This embodiment provides a magnetic measurement correction method, which extends the preset temperature value to a range beyond the probe operating temperature limit, uses precision temperature control equipment to construct an extreme temperature environment for data collection, and combines multi-temperature point data to improve the three-dimensional mapping model of temperature magnetic field resistance, thereby achieving the technical effects of improving temperature compensation accuracy, reducing the model's sensitivity to external interference, and enhancing adaptability to extreme conditions.

[0086] In one embodiment, the process of determining the current ambient temperature includes:

[0087] Before obtaining the first resistance of the first magnetic tunnel junction and / or after obtaining the first resistance of the first magnetic tunnel junction, applying a magnetic field to the easy axis of the second magnetic tunnel junction based on a preset magnetic field strength to obtain a second resistance corresponding to the second magnetic tunnel junction;

[0088] The preset magnetic field strength, the second resistance and the temperature mapping relationship information are used to obtain a mapping temperature corresponding to the preset magnetic field strength and the second resistance;

[0089] Based on the mapped temperature, the current ambient temperature is determined.

[0090] In this embodiment, the current ambient temperature can be obtained before obtaining the first resistance of the first magnetic tunnel junction, after obtaining the first resistance of the first magnetic tunnel junction, or at both times. It is understood that the ambient temperature may vary before and after scanning the target material. Therefore, the current ambient temperature can be calculated based on one or more of the second resistances before and after measurement.

[0091] The preset magnetic field strength, second resistance and temperature mapping relationship information are used to obtain a mapping temperature corresponding to the preset magnetic field strength and second resistance. The preset magnetic field strength and resistance value can be input into the temperature mapping relationship information to obtain the corresponding temperature value.

[0092] The current ambient temperature is determined based on the mapped temperature. For example, when the mapped temperature includes multiple measurement values, the multiple sets of data can be processed by algorithms such as weighted averaging, sliding average filtering, and Kalman filtering to determine the current ambient temperature.

[0093] This embodiment provides a magnetic measurement correction method that actively applies a preset magnetic field before and after magnetic detection to eliminate external magnetic field interference, and combines the temperature mapping relationship to achieve accurate temperature inversion. This solves the problem of temperature measurement errors caused by magnetic field interference in traditional methods, while maintaining the high efficiency of a single scan, and can achieve the technical effect of realizing high-precision temperature separation measurement in a complex magnetic field environment.

[0094] In one embodiment, the magnetic field applied to the easy magnetization axis of the second magnetic tunnel junction includes a forward magnetic field and a reverse magnetic field; the process of determining the current ambient temperature also includes: based on a preset acquisition rule, multiple acquisitions of the second resistance corresponding to the second magnetic tunnel junction; mapping the preset magnetic field strength, the second resistance and the temperature relationship information to obtain multiple mapping temperatures corresponding to the preset magnetic field strength and the second resistance respectively; and determining the current ambient temperature based on the multiple mapping temperatures.

[0095] Among them, the positive magnetic field can refer to an external magnetic field that is consistent with the direction of the easy magnetization axis of the second magnetic tunnel junction, so that the magnetic moment is arranged along the easy magnetization axis. For example, if the easy magnetization axis is transverse to the probe arm, the direction of the positive magnetic field can be the same as the transverse direction.

[0096] The reverse magnetic field may refer to an external magnetic field in the opposite direction to the easy magnetization axis of the second magnetic tunnel junction, so that the magnetic moment is arranged in the opposite direction to the easy magnetization axis. For example, if the easy magnetization axis is in the horizontal right direction, the reverse magnetic field direction may be in the horizontal left direction.

[0097] By alternating the application of forward and reverse magnetic fields, the direction of the magnetic field can be switched using an external magnetic field generator. For example, the magnetic field strength can be kept constant while the forward magnetic field is applied, while the resistance value is recorded. The reverse magnetic field can then be switched and the recording process repeated. By symmetric treatment of the forward and reverse magnetic fields, measurement deviations caused by the inherent magnetic anisotropy of the magnetic tunnel junction material or its dependence on the magnetic field direction can be eliminated, thereby improving the accuracy of temperature measurements.

[0098] The preset acquisition rules can be predefined magnetic field application sequence, number of times, time intervals or conditions, which are used to guide the data acquisition process, such as setting "alternately apply forward and reverse magnetic fields 5 times, each lasting 1 second", "continuously collect 10 sets of positive and reverse magnetic field data after the temperature stabilizes", etc.

[0099] By cyclically applying positive and negative magnetic fields and collecting data according to preset rules, multiple sets of data samples can be accumulated, reducing the impact of random noise and covering the resistance response under positive and negative field conditions. The temperature calculation provides more comprehensive input data, thereby enhancing the robustness of the measurement.

[0100] Correspondingly, the preset magnetic field strength, second resistance and temperature mapping relationship information is used to obtain multiple mapping temperatures corresponding to the preset magnetic field strength and second resistance respectively. This can be achieved by substituting multiple sets of preset magnetic field strength and second resistance into the temperature mapping relationship information to obtain multiple mapping temperature values.

[0101] Based on multiple mapped temperatures, the current ambient temperature is determined. For example, statistical methods such as averaging or median values ​​of the multiple mapped temperatures can be used. In one exemplary embodiment, the forward and reverse mapped temperatures can be averaged to obtain a forward average temperature and a reverse average temperature, respectively. The difference between the two can be calculated and a determination can be made as to whether it is within a preset error range. If the difference is within the allowable range, a weighted average of the forward and reverse average temperatures is taken as the final ambient temperature. If the difference exceeds the range, re-collection or fault diagnosis is triggered. Cross-validation of forward and reverse field measurements can further eliminate errors caused by magnetic field direction dependence or nonlinear response, improving measurement accuracy and reliability.

[0102] This embodiment provides a magnetic measurement correction method that alternately applies forward and reverse magnetic fields to offset magnetic anisotropy deviation, collects resistance data multiple times based on preset rules to reduce the impact of noise, and determines the final current ambient temperature value based on multiple mapped temperatures. This can achieve the technical effect of improving the anti-interference ability and accuracy of ambient temperature measurement.

[0103] In one embodiment, the resistance of the first magnetic tunnel junction is determined based on the voltage and / or current of the first magnetic tunnel junction; and the resistance of the second magnetic tunnel junction is determined based on the voltage and / or current of the second magnetic tunnel junction.

[0104] In one embodiment, calculating the magnetism of the target object based on the current ambient temperature, the temperature mapping relationship information, and the first resistance of the first magnetic tunnel junction includes:

[0105] Calculating a leakage magnetic field of the first magnetic tunnel junction corresponding to a target object based on the current ambient temperature, the temperature mapping relationship information, and the first resistance of the first magnetic tunnel junction;

[0106] Determine the magnetic properties of the target object based on the stray magnetic field.

[0107] Among them, the leakage magnetic field can be the magnetic field area radiating outward from the surface of the magnetic material. Its intensity is related to parameters such as the magnetization direction, magnetic domain structure and magnetization intensity of the target object, and can be indirectly deduced through the resistance change of the first magnetic tunnel junction.

[0108] Based on the current ambient temperature, the temperature mapping information, and the first resistance of the first magnetic tunnel junction, the leakage magnetic field of the first magnetic tunnel junction corresponding to the target object is calculated. The temperature mapping information can be used to perform temperature compensation on the first resistor to eliminate the influence of ambient temperature on the resistance value, thereby obtaining the resistance change caused solely by the leakage magnetic field. Based on the resistance-magnetic field sensitivity relationship of the magnetic tunnel junction, the resistance change is converted into the leakage magnetic field intensity through mathematical fitting or physical model calculation, thereby dynamically correcting for temperature interference so that the calculation result only reflects the magnetic contribution of the target object itself.

[0109] Furthermore, the magnetism of a target object can be determined based on the leakage magnetic field. This can be done by mapping the leakage magnetic field parameters to magnetic parameters using physical models or algorithms. For example, by integrating the target object's geometry and material properties and utilizing magnetic scalar potential theory or numerical simulation methods, the spatial distribution of the leakage magnetic field can be integrated to derive specific parameters such as magnetization intensity, remanence, or coercive force. This avoids positioning errors caused by temperature drift or double scanning in traditional methods.

[0110] This embodiment provides a magnetic measurement correction method that dynamically compensates for the magnetic tunnel junction resistance by utilizing a temperature mapping relationship to eliminate ambient temperature interference, calculates the leakage magnetic field strength in combination with the resistance-magnetic field sensitivity relationship, and converts the leakage magnetic field parameters into the magnetic properties of the target object through a physical model. This method can effectively improve the accuracy and data reliability of magnetic measurements, avoid the computational complexity brought about by multivariable coupling, and achieve the effect of reducing detection time and improving detection efficiency.

[0111] In one embodiment, when the needle tip is close to the target object, obtaining the first resistance of the first magnetic tunnel junction includes:

[0112] When the needle tip approaches the target object, the easy magnetization axis of the first magnetic tunnel junction extends toward the target object, and the easy magnetization axis of the second magnetic tunnel junction is parallel to the target object, the first resistance of the first magnetic tunnel junction is obtained.

[0113] Among them, the easy magnetization axis of the first magnetic tunnel junction extends toward the target object, which can be achieved by physical tilting of the probe arm, external magnetic field guidance, etc. For example, the probe orientation can be adjusted by driving a micro-electromechanical system to ensure that the easy magnetization axis is perpendicular to the contact plane between the probe and the target object.

[0114] The easy magnetization axis of the second magnetic tunnel junction is parallel to the target object, and the magnetic moment arrangement direction may be consistent with the surface of the target object. For example, the probe arm angle can be adjusted by the control system of the atomic force microscope to make the sensitive direction of the second magnetic tunnel junction parallel to the surface of the target object.

[0115] For example, when a perpendicular magnetic field is applied, the first magnetic tunnel junction should exhibit a significant resistance change, while the resistance change of the second magnetic tunnel junction should be primarily temperature-dependent. By gradually approaching the target object to a nanometer-scale distance while continuously monitoring the resistance change of the first magnetic tunnel junction and recording the resistance value of the second magnetic tunnel junction, real-time data acquisition can be achieved while simultaneously separating the magnetic field and temperature signals.

[0116] This embodiment provides a magnetic measurement correction method that constrains the easy magnetization axis of the first magnetic tunnel junction to be perpendicular to the surface of the target object to enhance its sensitivity to the normal magnetic field, while simultaneously aligning the easy magnetization axis of the second magnetic tunnel junction to be parallel to the surface of the target object to independently reflect changes in ambient temperature. This method can achieve the technical effect of accurately separating the target object's perpendicular magnetic field and temperature interference signals in complex environments.

[0117] In order to explain the technical solution of the present application in more detail, the present application also provides a detailed embodiment.

[0118] In one embodiment, a magnetic measurement correction method is provided, wherein the temperature mapping relationship information is a temperature response curve, and the method includes the following steps:

[0119] Step S1, obtaining a temperature response curve of the magnetic tunnel junction 12. The magnetic tunnel junction 12 includes at least a first magnetic tunnel junction 121 and a second magnetic tunnel junction 122. The first magnetic tunnel junction 121 and the second magnetic tunnel junction 122 may have the same or different temperature response curves; when the temperature response curves of the first magnetic tunnel junction 121 and the second magnetic tunnel junction 122 are different, a transformation relationship between the temperature response curve of the second magnetic tunnel junction 122 and the temperature response curve of the first magnetic tunnel junction 121 may be constructed based on the relationship between the temperature response curves of the two. The temperature response curve includes at least a mapping relationship between the resistance of the magnetic tunnel junction 12, the temperature of the magnetic tunnel junction 12, and the magnetic field strength of the magnetic field in which the magnetic tunnel junction 12 is located.

[0120] Step S2 , applying a magnetic field along the easy axis of the second magnetic tunnel junction 122 , and calculating the ambient temperature T according to the resistance R of the second magnetic tunnel junction 122 , the magnetic field intensity H of the applied magnetic field, and the temperature response curve.

[0121] The magnetic field may be applied to the easy magnetization axis of the second magnetic tunnel junction 122 before, during, or after the probe is used to detect the target object. In cases where the magnetic field is applied to the easy magnetization axis of the second magnetic tunnel junction 122 before or after detection, there are no special requirements for the orientation of the easy magnetization axis of the second magnetic tunnel junction 122.

[0122] Optionally, a second magnetic tunnel junction 122 having a specific easy magnetization axis can be used to achieve a corresponding function. For example, the easy magnetization axis of the second magnetic tunnel junction 122 can be made substantially perpendicular to the measured magnetism of the target object and perpendicular to the easy magnetization axis of the first magnetic tunnel junction 121, so that a magnetic field along the easy magnetization axis of the second magnetic tunnel junction 122 is applied to the probe during the detection process, thereby obtaining the temperature of the magnetic tunnel junction 12 at the corresponding time during the detection process, while avoiding the magnetic field from affecting the magnetism of the target object and avoiding interference with the detection of the magnetism of the target object by the first magnetic tunnel junction 121.

[0123] Optionally, for ease of use, the easy magnetization axes of the first magnetic tunnel junction 121 and the second magnetic tunnel junction 122 may be perpendicular to each other to avoid interference with detection of the first magnetic tunnel junction 121 when correction is performed through the second magnetic tunnel junction 122 .

[0124] Optionally, the direction of the easy magnetization axis of the first magnetic tunnel junction 121 can be configured to detect the polar leakage magnetic field of the target object. The direction of the easy magnetization axis of the second magnetic tunnel junction 122 can be set as needed.

[0125] Step S3 , calculating the magnetic properties of the target object according to the temperature response curve, the ambient temperature T, and the resistance of the first magnetic tunnel junction 121 .

[0126] Based on the above steps, the ambient temperature T of the second magnetic tunnel junction 122 has been obtained. Since the first magnetic tunnel junction 121 and the second magnetic tunnel junction 122 are very close to each other, the ambient temperatures of the two are roughly the same. The ambient temperature T calculated by the second magnetic tunnel junction 122 can be used as the ambient temperature of the first magnetic tunnel junction 121, and is used to calibrate the magnetism of the target object calculated using the resistance of the first magnetic tunnel junction 121.

[0127] By using the magnetic measurement correction method provided in this application, when the morphology and magnetism of the target object are simultaneously detected using the atomic force microscope probe provided in this application, the detected magnetism can be corrected to achieve synchronous and high-precision detection of the morphology and magnetism of the target object.

[0128] Optionally, the resistance of the magnetic tunnel junction 12 can be detected by measuring the voltage and / or current of the magnetic tunnel junction 12, that is, the resistance of the magnetic tunnel junction 12 can be obtained by measuring the signal of the magnetic tunnel junction 12; when it is necessary to calculate the resistance of the first magnetic tunnel junction 121, the voltage and / or current of the first magnetic tunnel junction 121 can be obtained to calculate the resistance of the first magnetic tunnel junction 121; when it is necessary to calculate the resistance of the second magnetic tunnel junction 122, the voltage and / or current of the second magnetic tunnel junction 122 can be obtained to calculate the resistance of the second magnetic tunnel junction 122. Therefore, the resistance of the magnetic tunnel junction 12 involved in this application can, in some cases, be equivalent to the signal of the magnetic tunnel junction 12, more specifically, to the voltage, current and other signals of the magnetic tunnel junction 12; accordingly, the resistance in the temperature response curve can also be equivalent to the signal of the magnetic tunnel junction 12, more specifically, to the voltage, current and other signals of the magnetic tunnel junction 12.

[0129] Optionally, for example, when the needle tip 11 approaches the target object to perform morphological detection and magnetic detection on the target object, the aforementioned S3 step also includes: when the needle tip 11 approaches the target object, according to the temperature response curve, the ambient temperature T, and the resistance R of the first magnetic tunnel junction 121, the leakage magnetic field of the target object where the first magnetic tunnel junction 121 is located is calculated, thereby calculating the magnetism of the target object, thereby achieving correction of the magnetic detection result of the target object.

[0130] Optionally, the ambient temperature T can also be obtained when the detection process is not in progress, so as to process the magnetic data obtained by detecting the target object using the probe to achieve correction. Specifically, the ambient temperature T can be determined according to S2 at at least one of the times before the detection of the target object begins and after the detection is completed; the leakage magnetic field of the target object where the first magnetic tunnel junction 121 is located is calculated based on the temperature response curve, the resistance of the first magnetic tunnel junction 121, and the ambient temperature T at at least one of the times before the detection begins and after the detection is completed, thereby calculating the magnetism of the target object. At this time, the resistance of the first magnetic tunnel junction 121 can be recorded during the process of the probe detecting the target object, and the magnetism of the corresponding target object can be calculated using the ambient temperature T at at least one of the times before the detection begins and after the detection is completed, as well as the temperature response curve.

[0131] Furthermore, when calibrating the magnetic detection results of the target object using the ambient temperature T before the start of detection, the calibration can be performed during the detection process; or it can be performed after the detection is completed, based on the recorded resistance and other data. When calibrating the magnetic detection results of the target object using the ambient temperature T after the detection is completed, the calibration can be performed based on the recorded resistance and other data. When calibrating the magnetic detection results of the target object using the ambient temperature T1 before the detection and the ambient temperature T2 after the detection are completed, the appropriate calibration method can be selected by comparing the difference between T1 and T2. For example, when the difference between T1 and T2 is large, the ambient temperature change curve of the first magnetic tunnel junction 121 is calculated using T1 and T2 to calculate the temperature change process of the first magnetic tunnel junction 121, and then the corresponding magnetic detection result is calculated based on the resistance and other data recorded by the temperature response curve. When the difference between T1 and T2 is small, the average of T1 and T2 is calculated, or a value that is more closely related to the detection result is selected to calculate the corresponding magnetic detection result based on the resistance and other data recorded by the temperature response curve.

[0132] Alternatively, the temperature response curve can be obtained as follows:

[0133] Step S1 may include the following steps:

[0134] Step S11, adjusting the temperature T of the magnetic tunnel junction 12 c;

[0135] Step S12, adjusting the magnetic field strength H applied to the easy magnetization axis of the magnetic tunnel junction 12 c ;

[0136] Step S13, calculating the resistance R of the magnetic tunnel junction 12 according to the voltage and / or current of the magnetic tunnel junction 12 c ;

[0137] Step S14, record the resistance R c , temperature T c , magnetic field strength H c ;

[0138] Step S15, changing the temperature T c , magnetic field strength H c At least one of them, perform steps S11 to S14 again;

[0139] Step S16, according to the resistance R c , temperature T c , magnetic field strength H c , obtaining a mapping relationship between resistance R and magnetic field strength H at different temperatures T as the temperature response curve.

[0140] Since the temperature response curve is closely related to the properties of the magnetic tunnel junction 12 , it is necessary to apply a magnetic field to the magnetic tunnel junction 12 and change the temperature to obtain the temperature response curve.

[0141] Optionally, the first magnetic tunnel junction 121 and the second magnetic tunnel junction 122 may have certain differences, and thus their temperature response curves may have certain differences. Accordingly, steps S11 to S16 may be performed on the first magnetic tunnel junction 121 and the second magnetic tunnel junction 122 respectively to obtain their respective temperature response curves.

[0142] When there is a difference in the temperature response curves of the first magnetic tunnel junction 121 and the second magnetic tunnel junction 122, the ambient temperature T can be obtained through the second magnetic tunnel junction 122, and then the magnetism of the target object or the correction magnetic detection result can be calculated based on the temperature response curve of the first magnetic tunnel junction 121, ambient temperature, resistance and other data.

[0143] Optionally, the temperature change range in step S15 may be set to be no less than the probe operating temperature range of the atomic force microscope to ensure that the temperature response curve can cover the operating temperature state of the atomic force microscope and ensure the available range of correction.

[0144] Optionally, the easy magnetization axis of the first magnetic tunnel junction 121 extends toward the target object so as to be able to detect the leakage magnetic field of the target object at least in the polar direction; the easy magnetization axis of the second magnetic tunnel junction 122 is parallel to the target object so as to facilitate application of a magnetic field to the second magnetic tunnel junction 122.

[0145] Optionally, in the aforementioned S2, the method for obtaining the ambient temperature T through the easy magnetization axis of the second magnetic tunnel junction 122 can be to apply a magnetic field along the easy magnetization axis of the second magnetic tunnel junction 122 to obtain the resistance of the second magnetic tunnel junction 122 and the magnetic field strength in which it is located; and search for a temperature value that matches the aforementioned resistance and magnetic field strength according to the temperature response curve as the ambient temperature T.

[0146] Optionally, in order to improve the accuracy of the determined ambient temperature T, multiple sets of resistance and magnetic field strength data may be collected, and the corresponding ambient temperature T may be obtained by combining the multiple sets of data with the temperature response curve.

[0147] In the aforementioned step S2, the secondary ambient temperature may be calculated multiple times, and the ambient temperature T may be calculated based on the secondary ambient temperature to improve the accuracy of the ambient temperature T. Specifically, the aforementioned step S2 may further include: applying a forward magnetic field and a reverse magnetic field along the easy magnetization axis of the second magnetic tunnel junction 122, obtaining the resistance of the second magnetic tunnel junction 122 and the magnetic field strength of the applied magnetic field multiple times, and calculating the secondary ambient temperature value; and calculating the ambient temperature T based on the multiple secondary ambient temperature values.

[0148] This embodiment provides a magnetic measurement correction method, which obtains the mapping relationship of the magnetic tunnel junction under different temperatures and magnetic fields, obtains the first resistance by scanning the needle tip and the target object at close range, and calculates the magnetic parameters based on the temperature compensation mechanism of the second magnetic tunnel junction. Through the structure of the dual magnetic tunnel junction probe, the magnetic and temperature measurements can be completed simultaneously, eliminating the interference of temperature fluctuations on the magnetic measurement and avoiding the morphological displacement error caused by two scans in the traditional method. At the same time, compared with the traditional technology, there is no need to separate the probe for lifting scanning, thereby enhancing the accuracy and reliability of the measurement results while reducing the detection time and improving the detection efficiency. Measuring the resistance of the magnetic tunnel junction under temperature and magnetic field conditions and integrating the discrete data into a parameterized model can accurately reflect the change pattern of the resistance of the magnetic tunnel junction with temperature and magnetic field, provide high-confidence benchmark parameters for magnetic calculations, and effectively reduce the measurement deviation caused by temperature fluctuations or nonlinear characteristics of the magnetic field, so as to improve the detection resolution and anti-interference ability. By extending the preset temperature value to a range beyond the probe operating temperature limit and using precision temperature control equipment to build an extreme temperature environment for data collection, and combining multi-temperature point data to improve the three-dimensional mapping model of temperature magnetic field resistance, it is possible to improve the temperature compensation accuracy, reduce the model's sensitivity to external interference, and enhance its adaptability to extreme conditions. The system can achieve the technical effect of high-precision temperature separation measurement in a complex magnetic field environment; by actively applying a preset magnetic field before and after magnetic detection to eliminate external magnetic field interference, and combining the temperature mapping relationship to achieve accurate temperature inversion, it solves the temperature measurement error problem caused by magnetic field interference in traditional methods, while maintaining the efficiency of a single scan, and can achieve the technical effect of high-precision temperature separation measurement in a complex magnetic field environment; by alternately applying positive and reverse magnetic fields to offset magnetic anisotropy deviation, collecting resistance data multiple times based on preset rules to reduce the influence of noise, and determining the final current ambient temperature value based on multiple mapped temperatures, it can achieve the technical effect of improving the anti-interference ability and accuracy of ambient temperature measurement; by using the temperature mapping relationship to measure the magnetic tunnel Dynamic compensation is performed on the junction resistance to eliminate ambient temperature interference, the leakage magnetic field strength is calculated in combination with the resistance-magnetic field sensitivity relationship, and the leakage magnetic field parameters are converted into the magnetic properties of the target object through a physical model. This can effectively improve the accuracy and data reliability of magnetic measurement, avoid the computational complexity brought by multi-variable coupling, and achieve the effect of reducing detection time and improving detection efficiency; by constraining the easy magnetization axis of the first magnetic tunnel junction to be perpendicular to the surface of the target object to enhance its sensitivity to the normal magnetic field, and at the same time making the easy magnetization axis of the second magnetic tunnel junction parallel to the surface of the target object to independently reflect ambient temperature changes, the technical effect of accurately separating the target object's vertical magnetic field and temperature interference signals in a complex environment can be achieved.

[0149] It should be understood that, although the various steps in the flowcharts involved in the various embodiments described above are displayed in sequence according to the instructions of the arrows, these steps are not necessarily executed in sequence in the order indicated by the arrows. Unless otherwise specified herein, there is no strict order restriction on the execution of these steps, and these steps can be executed in other orders. Moreover, at least a portion of the steps in the flowcharts involved in the various embodiments described above can include multiple steps or multiple stages, and these steps or stages are not necessarily executed and completed at the same time, but can be executed at different times, and the execution order of these steps or stages is not necessarily to be carried out in sequence, but can be executed in turn or alternately with other steps or at least a portion of steps or stages in other steps.

[0150] The technical features of the above embodiments can be combined arbitrarily. In order to make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0151] The above-described embodiments merely represent several implementation methods of the present application. While the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the present application. It should be noted that a person of ordinary skill in the art may make various modifications and improvements without departing from the spirit of the present application, and these modifications and improvements fall within the scope of protection of the present application. Therefore, the scope of protection of the present application shall be determined by the appended claims.

Claims

1. An atomic force microscope probe, characterized in that: The atomic force microscope probe includes a probe arm, one end of which is provided with a magnetic tunnel junction and a needle tip; the magnetic tunnel junction includes a first magnetic tunnel junction arranged between the probe arm and the needle tip, and a second magnetic tunnel junction arranged adjacent to the first magnetic tunnel junction; the easy magnetization axes of the first magnetic tunnel junction and the second magnetic tunnel junction are perpendicular to each other.

2. The atomic force microscope probe according to claim 1, characterized in that The easy magnetization axis of the first magnetic tunnel junction is arranged along the extending direction of the needle tip.

3. A magnetic measurement correction method, applied to an atomic force microscope, characterized in that: The atomic force microscope comprises an atomic force microscope probe according to any one of claims 1 to 2, and the magnetic measurement correction method comprises: Acquiring temperature mapping relationship information of the magnetic tunnel junction at different temperatures and magnetic field intensities; When the needle tip is close to the target object, obtaining a first resistance of the first magnetic tunnel junction; The magnetism of the target object is calculated based on the current ambient temperature, the temperature mapping relationship information, and the first resistance of the first magnetic tunnel junction; the current ambient temperature is determined based on the second magnetic tunnel junction.

4. The magnetic measurement correction method according to claim 3, characterized in that: The acquiring of temperature mapping relationship information of the magnetic tunnel junction at different temperatures and magnetic field intensities includes: Based on a plurality of preset temperature values ​​and a plurality of preset magnetic field strengths, sequentially applying a magnetic field and adjusting the temperature to the easy magnetization axis of the magnetic tunnel junction to obtain a voltage and / or current of the magnetic tunnel junction corresponding to each preset temperature value and each preset magnetic field strength; determining, based on the voltage and / or current, a resistance of the magnetic tunnel junction corresponding to each preset temperature value and each preset magnetic field strength; Based on the multiple preset temperature values, the multiple preset magnetic field strengths, and the multiple resistors, temperature mapping relationship information of the magnetic tunnel junction at different temperatures and magnetic field strengths is generated.

5. The magnetic measurement correction method according to claim 4, characterized in that: At least one preset temperature value is greater than a maximum operating temperature of the atomic force microscope probe, and / or at least one preset temperature value is less than a minimum operating temperature of the atomic force microscope probe.

6. The magnetic measurement correction method according to claim 3, characterized in that: The process of determining the current ambient temperature includes: Before obtaining the first resistance of the first magnetic tunnel junction and / or after obtaining the first resistance of the first magnetic tunnel junction, applying a magnetic field to the easy axis of the second magnetic tunnel junction based on a preset magnetic field strength to obtain a second resistance corresponding to the second magnetic tunnel junction; Obtaining a mapping temperature corresponding to the preset magnetic field strength and the second resistance by mapping the relationship information among the preset magnetic field strength, the second resistance, and the temperature; Based on the mapped temperature, a current ambient temperature is determined.

7. The magnetic measurement correction method according to claim 6, characterized in that: The magnetic field applied to the easy magnetization axis of the second magnetic tunnel junction includes a forward magnetic field and a reverse magnetic field; the process of determining the current ambient temperature also includes: based on a preset acquisition rule, multiple acquisitions of the second resistance corresponding to the second magnetic tunnel junction; mapping the preset magnetic field strength, the second resistance and the temperature relationship information to obtain multiple mapping temperatures corresponding to the preset magnetic field strength and the second resistance respectively; and determining the current ambient temperature based on the multiple mapping temperatures.

8. The magnetic measurement correction method according to claim 6, characterized in that: The resistance of the first magnetic tunnel junction is determined based on the voltage and / or current of the first magnetic tunnel junction; the resistance of the second magnetic tunnel junction is determined based on the voltage and / or current of the second magnetic tunnel junction.

9. The magnetic measurement correction method according to claim 3, characterized in that: The calculating the magnetism of the target object based on the current ambient temperature, the temperature mapping relationship information, and the first resistance of the first magnetic tunnel junction includes: Calculating a leakage magnetic field of the first magnetic tunnel junction corresponding to the target object based on the current ambient temperature, the temperature mapping relationship information, and a first resistance of the first magnetic tunnel junction; The magnetism of the target object is determined based on the leakage magnetic field.

10. The magnetic measurement correction method according to claim 3, characterized in that: When the needle tip approaches the target object, obtaining the first resistance of the first magnetic tunnel junction includes: When the needle tip approaches the target object, the easy magnetization axis of the first magnetic tunnel junction extends toward the target object, and the easy magnetization axis of the second magnetic tunnel junction is parallel to the target object, a first resistance of the first magnetic tunnel junction is obtained.

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