Multi-element synergetic doped ATO target material and preparation method thereof

Through the preparation method of multivariate collaborative doping ATO target, the problem of difficulty in taking into account both densification and conductivity of ATO targets is solved, and high density and low resistance ATO targets are realized, which are suitable for the application of high-performance transparent conductive films.

CN120483707APending Publication Date: 2025-08-15GUANGXI CRYSTAL UNION PHOTOELECTRIC MATERIALS CO LTD
1 Cites 1 Cited by

Patent Information

Application Number
CN202510773761.9
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-06-11
Publication Date
2025-08-15

AI Technical Summary

Technical Problem

The existing ATO targets are difficult to take into account both densification and conductivity. Although single doping can increase density, the resistivity increases, and abnormal discharge is easily caused during sputtering.

Method used

Using a multivariate synergistic doping method, high-valent oxides such as tantalum pentoxide, niobium pentoxide, vanadium pentoxide, gallium trioxide, tungsten trioxide and low-valent oxides such as zinc oxide, copper oxide, cobalt oxide, manganese oxide, cerium oxide, ATO targets are prepared by spray-drying granulation and mold forming cold isostatic pressing, combining two-stage heat treatment and three-stage sintering process.

Benefits of technology

ATO targets with high density (relative density >98.5%) and low resistivity (<5×10-3Ω·cm) were prepared, which is suitable for magnetron sputtering coating process of high-performance transparent conductive films.

✦ Generated by Eureka AI based on patent content.
Patent Text Reader

Abstract

The invention relates to a multi-element synergistic doped ATO target material and a preparation method thereof. Comprising the following steps: 1) uniformly mixing water and a powder dispersant, then adding an oxide 1 (at least one of tantalum pentoxide, niobium pentoxide, vanadium pentoxide, gallium oxide and tungsten trioxide), an oxide 2 (at least one of zinc oxide, copper oxide, cobalt oxide, manganese oxide and cerium oxide) and ATO raw material powder, and mixing and homogenizing to prepare slurry; 2) grinding the slurry and adding a powder forming adhesive; 3) carrying out spray drying granulation on the ground slurry; according to the preparation method, the ATO target material with high compactness (relative density gt, 98.5%) and low resistance (resistivity lt, 5 * 10 <-3 > omega.cm) is prepared through multi-element synergistic doping of the oxide, and the problem that compactness and conductivity of the ATO target material are difficult to consider at the same time in the prior art is solved.
Need to check novelty before this filing date? Find Prior Art