Tantalum-doped tin oxide thin film, preparation method thereof and photoelectric device
By using the magnetron sputtering method of tantalum-doped tin oxide thin films, regulating the sputtering atmosphere and preparation parameters, and combining it with in-situ annealing treatment, the problems of poor photoelectric performance and high preparation cost of tin oxide-based thin films were solved, and the preparation of low-cost, high-performance films was achieved.
Patent Information
- Application Number
- CN202410261633.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-03-07
- Publication Date
- 2025-09-12
AI Technical Summary
Existing tin oxide-based films and zinc oxide-based films have poor photoelectric performance, and the process optimization methods for improving photoelectric performance have high requirements for preparation conditions and equipment, resulting in high preparation costs.
By using the magnetron sputtering method of tantalum-doped tin oxide thin films, by regulating the sputtering atmosphere and preparation parameters, such as the ratio of argon, oxygen, and hydrogen, as well as the pressure and power of radio frequency magnetron sputtering, combined with in-situ annealing treatment, a film with good optoelectronic properties was prepared.
The low-cost preparation of high-performance tantalum-doped tin oxide thin films has been achieved, which has improved the photoelectric properties of the films while reducing the cost of the preparation process.
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Figure CN120624983A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the technical field of electronic materials, and in particular to a tantalum-doped tin oxide thin film, a preparation method thereof, and a photoelectric device. Background Art
[0002] In recent years, with the continuous development of solar cells, heterojunction solar cells and perovskite cells have great development potential. Among them, transparent conductive oxide (TCO) films play an important role in optical transmission and electrical transmission in the battery device structure. They need to have high transmittance and high conductivity. In addition, TCO is also used in many electronic device fields.
[0003] Tin-doped indium oxide (ITO) is the most commonly used TCO film in electronic devices and solar cells. However, due to the global shortage of indium resources, the production cost of ITO films is very high. To reduce production costs, the main TCO films currently available to replace ITO films include tin oxide-based films and zinc oxide-based films. However, current tin oxide-based and zinc oxide-based films often suffer from poor photoelectric performance, and to improve photoelectric performance, typical process optimization methods often require higher heating temperatures or highly precise production equipment. In other words, current process optimization methods for improving photoelectric performance place high demands on production conditions and equipment, resulting in high production costs. Summary of the Invention
[0004] Based on this, the present application provides a tantalum-doped tin oxide film with good photoelectric performance and low preparation process cost, a preparation method thereof, and a photoelectric device.
[0005] A first aspect of the present application provides a method for preparing a tantalum-doped tin oxide thin film, comprising: performing magnetron sputtering treatment on a tantalum-doped tin oxide target to prepare a tantalum-doped tin oxide thin film, wherein the sputtering atmosphere of the magnetron sputtering comprises argon, oxygen, and hydrogen, and in the volume of the sputtering atmosphere flowing into the sputtering chamber per unit time, the volume of the argon accounts for 95% to 97%, the volume of the oxygen accounts for 1% to 2%, and the volume of the hydrogen accounts for 1% to 4%.
[0006] In some embodiments of the present application, the doping amount of tantalum in the tantalum-doped tin oxide target is 2 wt.%~10 wt.%.
[0007] In some embodiments of the present application, the magnetron sputtering treatment of the tantalum-doped tin oxide target comprises:
[0008] Preheating the substrate;
[0009] Performing radio frequency magnetron sputtering on the tantalum-doped tin oxide target material to deposit tantalum and tin oxide on the substrate to form a deposition layer;
[0010] The deposited layer is subjected to in-situ annealing treatment.
[0011] In some embodiments of the present application, the temperature of the preheat treatment is 100°C to 200°C.
[0012] In some embodiments of the present application, at least one of the following conditions is met:
[0013] (1) The background pressure at the start of the RF magnetron sputtering is <4×10 -4 Pa;
[0014] (2) The sputtering pressure of the radio frequency magnetron sputtering is 0.3 Pa~1.0 Pa;
[0015] (3) The radio frequency power of the radio frequency magnetron sputtering is 1.5W / cm 2 ~2.0W / cm 2 .
[0016] In some embodiments of the present application, at least one of the following conditions is met:
[0017] (1) The temperature of the in-situ annealing treatment is 100°C to 200°C;
[0018] (2) The in-situ annealing treatment time is 20 min to 30 min.
[0019] In some embodiments of the present application, the method for preparing the tantalum-doped tin oxide target includes:
[0020] The tantalum-doped tin oxide target is prepared by grinding and tableting tantalum-doped tin oxide powder and then sintering.
[0021] The second aspect of the present application provides a tantalum-doped tin oxide thin film, which is prepared by the preparation method described in the first aspect of the present application.
[0022] In some embodiments of the present application, at least one of the following conditions is met:
[0023] (1) The doping amount of tantalum in the tantalum-doped tin oxide film is 2 wt.%~10 wt.%;
[0024] (2) The thickness of the tantalum-doped tin oxide film is 50 nm to 200 nm.
[0025] A third aspect of the present application provides a photoelectric device comprising the tantalum-doped tin oxide thin film described in the second aspect of the present application.
[0026] The preparation method provided in the present application reasonably controls the key preparation parameters in the magnetron sputtering process, namely, the tantalum doping amount in the tantalum-doped tin oxide target and the sputtering atmosphere of the magnetron sputtering. This not only enables the prepared tantalum-doped tin oxide film to have good photoelectric properties, but also, because the magnetron sputtering method has relatively low requirements for preparation conditions or preparation equipment, it can effectively reduce the preparation optimization cost of optimizing the performance of tin oxide-based films. BRIEF DESCRIPTION OF THE DRAWINGS
[0027] Figure 1 This is a surface electron scanning microscope morphology image of the tantalum-doped tin oxide film prepared in Example 1.
[0028] Figure 2 This is the absorption spectrum of the tantalum-doped tin oxide thin film prepared in Example 1.
[0029] Figure 3 This is the X-ray diffraction spectrum of the tantalum-doped tin oxide thin film prepared in Example 1.
[0030] Figure 4 This is the absorption spectrum of the tantalum-doped tin oxide film prepared in Comparative Example 1. DETAILED DESCRIPTION
[0031] To facilitate understanding of the present application, the present application will be described in more detail below. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. Rather, the purpose of providing these embodiments is to provide a more thorough and comprehensive understanding of the disclosure of the present application.
[0032] For simplicity, this application only explicitly discloses certain numerical ranges. However, any lower limit may be combined with any upper limit to form an unspecified range; and any lower limit may be combined with other lower limits to form an unspecified range, and similarly, any upper limit may be combined with any other upper limit to form an unspecified range. In addition, although not explicitly stated, each point or individual value between the endpoints of a range is included in the range. Thus, each point or individual value may serve as its own lower limit or upper limit and be combined with any other point or individual value, or with other lower limits or upper limits, to form an unspecified range.
[0033] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those skilled in the art to which this application belongs. The terms used herein in the specification of this application are for the purpose of describing specific embodiments only and are not intended to limit this application. It should be noted that, unless otherwise stated, the term "and / or" used herein includes any and all combinations of one or more related listed items, "above" and "below" are inclusive of the number, and the meaning of "multiple" in "one or more" is more than two.
[0034] The above disclosure of the present application is not intended to describe every disclosed embodiment or every implementation in the present application. The following description more specifically illustrates exemplary embodiments. In many places throughout the application, guidance is provided through a series of examples, which can be used in various combinations. In each example, the enumeration is intended only as a representative group and should not be construed as exhaustive.
[0035] A first aspect of the present application provides a method for preparing a tantalum-doped tin oxide thin film, which may include the following steps: performing magnetron sputtering treatment on a tantalum-doped tin oxide target to prepare a tantalum-doped tin oxide thin film, wherein the sputtering atmosphere of the magnetron sputtering includes argon, oxygen and hydrogen, and the volume of the sputtering atmosphere flowing into the sputtering chamber per unit time comprises 95% to 97% of the volume of argon, 1% to 2% of the volume of oxygen, and 1% to 4% of the volume of hydrogen.
[0036] This application uses magnetron sputtering to treat a tantalum-doped tin oxide target to prepare a tantalum-doped tin oxide thin film. During the magnetron sputtering process, the sputtering atmosphere used includes argon, oxygen, and hydrogen. Argon can be used as the basic atmosphere of the sputtering chamber. The inventor speculates that during the sputtering process, oxygen can reduce deep energy level defects in the film. On the one hand, hydrogen can promote the crystallization of the film and reduce internal defects in the film, thereby improving the photoelectric performance of the film; on the other hand, it can act as a shallow donor and be doped into the lattice of the thin film tin oxide, increasing the carrier concentration, thereby improving the conductive performance of the film. Moreover, hydrogen and oxygen may also form bonds and be doped into the crystal structure of the thin film tin oxide, synergistically improving the photoelectric performance of the film.
[0037] Therefore, the preparation method of the present application can not only make the prepared tantalum-doped tin oxide film have good photoelectric properties by reasonably regulating the key preparation parameters in the magnetron sputtering process, but also effectively reduce the preparation optimization cost of tin oxide-based films because the magnetron sputtering method has relatively low requirements for preparation conditions or preparation equipment.
[0038] In some embodiments, the volume proportion of argon gas in the sputtering atmosphere flowing into the sputtering chamber per unit time can be 95%, 95.5%, 96%, 96.5%, 97% or any range of the above values.
[0039] In some embodiments, the volume proportion of oxygen in the sputtering atmosphere in the gas volume flowing into the sputtering chamber per unit time can be 1%, 1.1%, 1.2%, 1.3%, 1.4%, 1.5%, 1.6%, 1.7%, 1.8%, 1.9%, 2% or any range of the above values.
[0040] In some embodiments, the volume proportion of hydrogen in the sputtering atmosphere in the gas volume flowing into the sputtering chamber per unit time can be 1%, 1.1%, 1.2%, 1.3%, 1.4%, 1.5%, 1.6%, 1.7%, 1.8%, 1.9%, 2%, 2.1%, 2.2%, 2.3%, 2.4%, 2.5%, 2.6%, 2.7%, 2.8%, 2.9%, 3%, 3.1%, 3.2%, 3.3%, 3.4%, 3.5%, 3.6%, 3.7%, 3.8%, 3.9%, 4% or within a range consisting of any of the above values.
[0041] In the volume of gas flowing into the sputtering chamber per unit time, the volume proportions of argon, oxygen and hydrogen are respectively within the above ranges, which is beneficial to further reduce deep energy level defects in the film; the volume proportion of hydrogen is within the above range, which is beneficial to further reduce internal defects in the film and further increase the carrier concentration in the film.
[0042] Moreover, the volume proportions of oxygen and hydrogen in the gas volume flowing into the sputtering chamber per unit time are both within the above-mentioned respective ranges, which is also conducive to enhancing the synergistic effect between the two, and further enhancing the photoelectric performance of the thin film through the enhancement of the synergistic effect.
[0043] In some embodiments, the tantalum doping amount in the tantalum-doped tin oxide target is 2 wt.% to 10 wt.%. For example, the tantalum doping amount in the tantalum-doped tin oxide target can be 2 wt.%, 2.5 wt.%, 3 wt.%, 3.5 wt.%, 4 wt.%, 4.5 wt.%, 5 wt.%, 5.5 wt.%, 6 wt.%, 6.5 wt.%, 7 wt.%, 7.5 wt.%, 8 wt.%, 8.5 wt.%, 9 wt.%, 9.5 wt.%, 10 wt.%, or any range thereof.
[0044] It should be noted that the doping amount of tantalum in the tantalum-doped tin oxide target refers to the mass percentage of tantalum in the tantalum-doped tin oxide target.
[0045] By controlling the tantalum doping level in the target material within the aforementioned range, on the one hand, the donor concentration in the prepared thin film can be controlled, ensuring that the donor concentration and carrier concentration in the film are within an appropriate range; on the other hand, the introduction of defects in the film can be reduced, thereby improving carrier mobility. Therefore, by controlling the tantalum doping level in the target material within the aforementioned range, the prepared thin film can achieve a balanced balance between carrier concentration and mobility, thereby improving the optoelectronic properties of the film.
[0046] In some embodiments, the magnetron sputtering treatment of the tantalum-doped tin oxide target may include the following steps:
[0047] S1, preheating the substrate;
[0048] S2, performing radio frequency magnetron sputtering on the tantalum-doped tin oxide target to deposit tantalum and tin oxide on the substrate to form a deposition layer;
[0049] S3. Performing in-situ annealing treatment on the deposited layer.
[0050] In some embodiments, the temperature of the preheat treatment is 100° C. to 200° C. For example, the temperature of the preheat treatment can be 100° C., 150° C., 200° C., or any range thereof.
[0051] The temperature of the preheat treatment is within the above range, which can not only reduce the defects generated during the thin film growth process and improve the photoelectric properties of the thin film, but also help control and reduce the cost of the preparation process.
[0052] In some embodiments, the background pressure at the start of the RF magnetron sputtering is less than 4×10 -4 Pa.
[0053] In some embodiments, the sputtering pressure of the RF magnetron sputtering is 0.3 Pa~1.0 Pa.
[0054] In some embodiments, the RF power of the RF magnetron sputtering is 1.5 W / cm 2 ~2.0W / cm 2 .
[0055] It can be understood that the background pressure at the beginning of RF magnetron sputtering refers to the pressure in the sputtering chamber when RF magnetron sputtering starts to generate glow discharge; the sputtering pressure of RF magnetron sputtering refers to the pressure in the sputtering chamber during the thin film deposition process.
[0056] During RF magnetron sputtering, excessive background pressure at the start of sputtering can introduce growth impurities, affecting film performance. A low sputtering pressure, or growth gas pressure, can affect the glow, while a high pressure can affect sputtering efficiency and film growth. Furthermore, the RF power during sputtering affects the film growth rate, while excessive power can introduce sputtering damage, affecting film performance. By regulating the background pressure, sputtering pressure, and RF power at the start of RF magnetron sputtering within these respective ranges, a balance and synergy can be achieved between the various preparation parameters, thereby providing a favorable growth environment for film preparation and growth, enabling films grown in this environment to achieve superior optoelectronic properties.
[0057] In some embodiments, the temperature of the in-situ annealing treatment is 100° C. to 200° C. For example, the temperature can be 100° C., 150° C., 200° C., or any range thereof.
[0058] It should be noted that the "in-situ annealing treatment" mentioned in this application means that after the thin film deposition is completed, the substrate is annealed directly at the location where the deposition is completed without transferring the substrate and the thin film.
[0059] The temperature of the in-situ annealing treatment is within the above range, which is conducive to balancing the optoelectronic properties of the film and the production cost.
[0060] In some embodiments, the in-situ annealing treatment lasts for 20 min to 30 min. For example, the in-situ annealing treatment lasts for 20 min, 25 min, 30 min, or any range thereof.
[0061] In some embodiments, the material of the substrate is not limited and can be selected according to actual needs, for example, silicon, glass, etc.
[0062] In some embodiments, the method for preparing the tantalum-doped tin oxide target may include: grinding tantalum-doped tin oxide powder, pressing the powder into tablets, and then sintering the powder to prepare the tantalum-doped tin oxide target.
[0063] In some embodiments, the purity of the tantalum-doped tin oxide powder is greater than 99.99%.
[0064] Thus, the present application uses tantalum-doped tin oxide as a target material to prepare TCO thin films, and uses low-cost production raw materials compared to traditional TCO thin films. The production process is simple to operate, the raw materials are easy to obtain, the production process temperature is low, the energy consumption is small, the device preparation process requirements are low, and higher optoelectronic performance can be achieved based on tin oxide-based materials.
[0065] The second aspect of the present application provides a tantalum-doped tin oxide thin film, which is prepared by the method of the first aspect of the present application.
[0066] In some embodiments, the doping amount of tantalum in the tantalum-doped tin oxide film is 2 wt.% to 10 wt.%.
[0067] It can be understood that the doping amount of tantalum in the tantalum-doped tin oxide film refers to the mass percentage of tantalum in the tantalum-doped tin oxide film.
[0068] In some embodiments, the thickness of the tantalum-doped tin oxide film is 50 nm to 200 nm. For example, the thickness of the tantalum-doped tin oxide film can be 50 nm, 100 nm, 150 nm, 200 nm, or any range thereof.
[0069] The film within the above-mentioned thickness range can effectively balance the influence of the crystallization state caused by the thickness on the film growth, so that the film has good optical and electrical properties.
[0070] In some embodiments, the tantalum-doped tin oxide film is a transparent film.
[0071] A third aspect of the present application provides a photoelectric device comprising the tantalum-doped tin oxide thin film of the second aspect of the present application.
[0072] In some implementations, optoelectronic devices include, but are not limited to, heterojunction solar cells, perovskite cells, and other transparent optoelectronic devices.
[0073] Example
[0074] The following are specific examples, which describe the present disclosure in more detail. These examples are intended for illustrative purposes only, as various modifications and variations within the scope of the present disclosure will be apparent to those skilled in the art. Unless otherwise stated, all parts, percentages, and ratios reported in the following examples are by weight, and all reagents used in the examples are commercially available or synthesized according to conventional methods and can be used directly without further processing. The instruments used in the examples are also commercially available.
[0075] Example 1
[0076] S1. 4 wt.% tantalum-doped tin oxide powder is measured, ground, stirred, tableted, and sintered to produce a target material.
[0077] S2. Use high-purity deionized water, acetone, and anhydrous ethanol to ultrasonically clean the glass substrate for 15 minutes in sequence, blow it dry with a high-purity nitrogen gun, and place it in the sputtering chamber as a substrate.
[0078] S3, using radio frequency magnetron sputtering equipment to form a film, preheat the substrate to 200 ° C, use the polished target material to form a film, and in a vacuum of 4×10 -4 Pa, 95 sccm (mL / min) of argon, 2 sccm of oxygen, and 2.5 sccm of hydrogen were introduced, the RF source power was 30 W, the sputtering pressure was 0.4 Pa, and the growth time was 27 min to obtain a deposited layer.
[0079] S4. The deposited layer was in-situ annealed at 200° C. for 30 min to obtain a tantalum-doped tin oxide thin film, which was recorded as sample 1.
[0080] Example 2
[0081] S1. 4 wt.% tantalum-doped tin oxide powder is measured, ground, stirred, tableted, and sintered to produce a target material.
[0082] S2. Use high-purity deionized water, acetone, and anhydrous ethanol to ultrasonically clean the glass substrate for 15 minutes in sequence, blow it dry with a high-purity nitrogen gun, and place it in the sputtering chamber as a substrate.
[0083] S3, using radio frequency magnetron sputtering equipment to form a film, preheat the substrate to 200 ° C, use the polished target material to form a film, and in a vacuum of 4×10 -4 Pa, 95 sccm of argon, 1 sccm of oxygen, and 3 sccm of hydrogen were introduced, the RF source power was 30 W, the sputtering pressure was 0.4 Pa, and the growth time was 27 min to obtain a deposited layer.
[0084] S4. The deposited layer was in-situ annealed at 200° C. for 30 min to obtain a tantalum-doped tin oxide thin film, which was recorded as sample 2.
[0085] Example 3
[0086] The preparation method is similar to that of Example 2, with the main difference being that in step S3, the argon flow rate is 97 sccm and the hydrogen flow rate is 1 sccm.
[0087] Example 4
[0088] The preparation method is similar to that of Example 1, with the main difference being that in step S1, the doping amount of tantalum in the tin oxide powder is approximately 15%.
[0089] Example 5
[0090] The preparation method is similar to that of Example 1, with the main difference being that in step S1, the doping amount of tantalum in the tin oxide powder is approximately 1%.
[0091] Comparative Example 1
[0092] The preparation method is similar to that of Example 1, with the main difference being that in step S3, the oxygen flow rate is 0 sccm and the hydrogen flow rate is 5 sccm.
[0093] Comparative Example 2
[0094] The preparation method is similar to that of Example 1, with the main difference being that in step S3, the oxygen flow rate is 3 sccm and the hydrogen flow rate is 0 sccm.
[0095] Comparative Example 3
[0096] The preparation method is similar to that of Example 1, with the main difference being that in step S3, the hydrogen flow rate is 0.5 sccm.
[0097] The tantalum-doped tin oxide thin films prepared in Examples 1 to 5 and Comparative Examples 1 to 3 were subjected to relevant performance tests, and the test results are shown in Table 1 below.
[0098] Among them, the test conditions or test standards for each performance test item are as follows:
[0099] (1) Film morphology and thickness: tested using a scanning electron microscope.
[0100] (2) Optical properties: The transmission spectrum and absorption spectrum were obtained by UV-visible spectrophotometer.
[0101] (3) Electrical properties: The resistivity, carrier concentration and mobility were obtained by using a Hall effect tester.
[0102] (4) XRD pattern: tested using an X-ray diffraction analyzer.
[0103] Table 1
[0104]
[0105] As can be seen from Table 1 above, the resistivity of the tantalum-doped tin oxide films (Examples 1 to 3) prepared by the preparation method of the present application can reach 2.9×10 -3 Ω / cm or less, and the carrier concentration can reach 9×10 19 cm -3 Above, the migration rate can reach 18cm 2 / V·s and above, with good photoelectric performance.
[0106] In addition, from Figure 1 It can be seen that the surface of the film prepared in Example 1 is uniform and flat, and the film thickness obtained by cross-sectional scanning is about 100 nm. Figure 2 It can be seen that the film prepared in Example 1 has good transmittance and low absorptivity in both the visible spectrum and the near-infrared light part. The average absorptivity is calculated to be about 1.6%. Figure 3 It can be seen that the film prepared in Example 1 has a polycrystalline-amorphous composite structure, and the amorphous structure can passivate the polycrystalline grain boundary defects, thereby enabling the film to achieve a good mobility level.
[0107] The surface of the film prepared in Comparative Example 1 is dark black, and Figure 4 As can be seen, the film has poor transmittance and high absorptivity in the short-wavelength region. When tested for resistance using a Hall effect meter, the film's electrical properties were extremely poor, with a surface insulation (corresponding to the test results in Table 1 being out of range), demonstrating the crucial role of oxygen in the sputtering atmosphere in improving film performance. While the film prepared in Comparative Example 2 is transparent, Table 1 shows that the film's photoelectric properties are extremely poor, demonstrating the crucial role of hydrogen in the sputtering atmosphere in improving film performance.
[0108] The technical features of the above-mentioned embodiments can be combined arbitrarily. In order to make the description concise, not all possible combinations of the technical features in the above-mentioned embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.
[0109] The above-described embodiments merely represent several implementation methods of the present application. While the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the present invention. It should be noted that a person skilled in the art could make various modifications and improvements without departing from the spirit of the present application, all of which fall within the scope of protection of the present application. Therefore, the scope of protection of the present patent application shall be determined by the appended claims.
Claims
1. A method for preparing a tantalum-doped tin oxide thin film, characterized in that: include: A tantalum-doped tin oxide target is subjected to magnetron sputtering treatment to prepare a tantalum-doped tin oxide thin film, wherein the sputtering atmosphere of the magnetron sputtering includes argon, oxygen and hydrogen. In the gas volume flowing into the sputtering chamber per unit time, the volume of the argon accounts for 95% to 97%, the volume of the oxygen accounts for 1% to 2%, and the volume of the hydrogen accounts for 1% to 4%.
2. The preparation method according to claim 1, characterized in that The doping amount of tantalum in the tantalum-doped tin oxide target is 2 wt.%~10 wt.%.
3. The preparation method according to claim 1 or 2, characterized in that The magnetron sputtering treatment of the tantalum-doped tin oxide target material comprises: Preheating the substrate; performing radio frequency magnetron sputtering on the tantalum-doped tin oxide target material to deposit tantalum and tin oxide on the substrate to form a deposition layer; The deposited layer is subjected to in-situ annealing treatment.
4. The preparation method according to claim 3, characterized in that The temperature of the preheating treatment is 100°C to 200°C.
5. The preparation method according to claim 3, characterized in that At least one of the following conditions is met: (1) The background pressure at the start of the RF magnetron sputtering is <4×10 -4 Pa; (2) The sputtering pressure of the radio frequency magnetron sputtering is 0.3 Pa~1.0 Pa; (3) The radio frequency power of the radio frequency magnetron sputtering is 1.5W / cm 2 ~2.0W / cm 2 .
6. The preparation method according to claim 3, characterized in that At least one of the following conditions is met: (1) The temperature of the in-situ annealing treatment is 100°C to 200°C; (2) The in-situ annealing treatment time is 20 min to 30 min.
7. The preparation method according to claim 3, characterized in that The preparation method of the tantalum-doped tin oxide target comprises: The tantalum-doped tin oxide target is prepared by grinding and tableting tantalum-doped tin oxide powder and then sintering.
8. A tantalum-doped tin oxide thin film, characterized in that: It is prepared by the preparation method according to any one of claims 1 to 7.
9. The tantalum-doped tin oxide thin film according to claim 8, characterized in that At least one of the following conditions is met: (1) The doping amount of tantalum in the tantalum-doped tin oxide film is 2 wt.%~10 wt.%; (2) The thickness of the tantalum-doped tin oxide film is 50 nm to 200 nm.
10. A photoelectric device, characterized in that: The method comprises the tantalum-doped tin oxide thin film according to claim 8 or 9.