Preparation method of cuprous iodide transparent film
By depositing a copper film on a silicon substrate and spin-coating PMMA followed by iodination, the difficulty of preparing a smooth CuI film was solved, and high-quality CuI films were applied to inorganic transparent electronic devices.
Patent Information
- Application Number
- CN202510870871.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-06-26
- Publication Date
- 2025-09-12
AI Technical Summary
Existing technologies make it difficult to prepare smooth and bright cuprous iodide films, which limits their application in inorganic transparent electronic devices.
Copper thin film was deposited on silicon substrate by magnetron sputtering. PMMA thin film was spin-coated, iodinated in iodine atmosphere and removed by dissolving with acetone to prepare CuI thin film.
A continuous and dense CuI film with high surface brightness and weak light scattering was prepared, which is suitable for inorganic transparent electronic devices.
Smart Images
Figure CN120625002A_ABST
Abstract
Description
Technical Field
[0001] The invention belongs to the field of material preparation, and particularly relates to a method for preparing a cuprous iodide (CuI) transparent thin film. Background Art
[0002] Inorganic transparent electronic devices have broad application prospects in optoelectronic devices, wearable devices, smart devices, and other fields. However, the lack of high-performance p-type transparent conductive films has hindered the development of such products. Cuprous iodide films exhibit p-type transparent conductive properties and have become a popular material for p-type transparent conductive film research in recent years. However, conventional preparation methods, such as the iodination of metallic copper, produce CuI films with large grain size and high surface roughness, resulting in the film having the appearance of frosted glass. The difficulty in preparing CuI films is how to produce smooth and bright CuI films. Summary of the Invention
[0003] This patent addresses the deficiencies in the prior art and proposes a method for preparing a transparent cuprous iodide film.
[0004] The present invention uses silicon and ITO conductive films as substrates, obtains copper films on the surfaces of these substrates by magnetron sputtering; then spin-coats polymethyl methacrylate (PMMA) films on the surfaces; then places them in iodine vapor for iodination, and after iodination, uses acetone to dissolve and remove the PMMA films to obtain a CuI film.
[0005] The specific steps of the method for preparing a cuprous iodide transparent conductive film of the present invention are: Step (1). A single crystal silicon wafer with silicon dioxide grown on the surface is used as a substrate, and a copper film is deposited by magnetron sputtering to obtain a Cu / SiO2 / Si structure; Step (2). Spin-coating the anisole solution of PMMA onto the surface of the copper film obtained in step (1) by spin coating to obtain a PMMA film on the copper surface to obtain a PMMA / Cu / SiO2 / Si structure; Step (3). The product obtained in step (2) is placed in a glass container containing elemental iodine particles and kept warm at 5-40°C for 15-720 min to obtain a PMMA / CuI / SiO2 / Si structure; Step (4). The product of step (3) is dissolved in acetone to remove PMMA, thereby obtaining CuI grown on a surface having a silicon dioxide surface, namely, a CuI / SiO2 / Si structure.
[0006] Preferably, the thickness of the deposited copper film is 10-300 nm.
[0007] Preferably, a polymethyl methacrylate film is spin-coated, specifically a 0.05-1 mol / L PMMA anisole solution is spin-coated.
[0008] Preferably, the thickness of the PMMA film is 50-200 nm.
[0009] The present invention uses a spin-coated film on the copper surface to block the amount of iodine that reacts with copper, reducing the reaction rate and improving film quality. The CuI film produced by this patent has the advantages of being continuous and dense, with high surface brightness and low light scattering. The method of the present invention is simple, low-cost, and can be industrialized. BRIEF DESCRIPTION OF THE DRAWINGS
[0010] Figure 1 is the XRD pattern of the CuI thin film of the present invention.
[0011] Figure 2 This is a digital photo of a cuprous iodide thin film grown on the surface of a single-crystal silicon wafer with a 300 nm thick silicon dioxide layer. DETAILED DESCRIPTION
[0012] Example 1: A method for preparing a transparent cuprous iodide film, the method specifically comprising: Step (1). Using a single crystal silicon wafer with silicon dioxide grown on the surface as the substrate, a 10 nm copper film was deposited by magnetron sputtering to obtain a Cu / SiO2 / Si structure; Step (2). A 0.05 mol / L PMMA anisole solution was spin-coated onto the surface of the copper film obtained in step (1) to obtain a 50 nm thick PMMA film on the copper surface, thereby obtaining a PMMA / Cu / SiO2 / Si structure. Step (3). The product obtained in step (2) was placed in a glass container containing elemental iodine particles and kept at 5°C for 15 minutes to obtain a PMMA / CuI / SiO2 / Si structure; Step (4). The product of step (3) is dissolved in acetone to remove PMMA, thereby obtaining CuI grown on a surface having a silicon dioxide surface, i.e., a CuI / SiO2 / Si structure; Figure 1 Shown is the XRD pattern of the CuI film of the present invention; Figure 2 Shown is a digital photo of a cuprous iodide thin film grown on the surface of a single crystal silicon wafer with a 300 nm thick silicon dioxide layer grown on the surface.
[0013] Example 2: Step (1). A single crystal silicon wafer with silicon dioxide grown on the surface was used as a substrate, and a copper film with a thickness of 100 nm was deposited by magnetron sputtering to obtain a Cu / SiO2 / Si structure; Step (2) by spin coating a 0.5 mol / L PMMA anisole solution onto the copper film surface obtained in step (1), obtaining a PMMA film with a thickness of 100 nm on the copper surface to obtain a PMMA / Cu / SiO2 / Si structure; Step (3). The product obtained in step (2) was placed in a glass container containing elemental iodine particles and kept at 20°C for 220 minutes to obtain a PMMA / CuI / SiO2 / Si structure; Step (4). The product of step (3) is dissolved in acetone to remove PMMA, thereby obtaining CuI grown on a surface having a silicon dioxide surface, namely, a CuI / SiO2 / Si structure.
[0014] Example 3: Step (1). A single crystal silicon wafer with silicon dioxide grown on the surface was used as a substrate, and a copper film with a thickness of 300 nm was deposited by magnetron sputtering to obtain a Cu / SiO2 / Si structure; Step (2). A 1 mol / L PMMA anisole solution was spin-coated onto the surface of the copper film obtained in step (1) to form a 200 nm thick PMMA film on the copper surface, thereby obtaining a PMMA / Cu / SiO2 / Si structure. Step (3). The product obtained in step (2) was placed in a glass container containing elemental iodine particles and kept at 40°C for 700 min to obtain a PMMA / CuI / SiO2 / Si structure; Step (4). The product of step (3) is dissolved in acetone to remove PMMA, thereby obtaining CuI grown on a surface having a silicon dioxide surface, namely, a CuI / SiO2 / Si structure.
Claims
1. A method for preparing a cuprous iodide transparent conductive film, characterized in that: The method is specifically as follows: using silicon and ITO conductive films as substrates, copper films are obtained on the surfaces of these substrates by magnetron sputtering; then polymethyl methacrylate films are spin-coated on the surfaces; then the films are placed in iodine vapor for iodination, and after iodination, the PMMA films are dissolved and removed with acetone to obtain a CuI film.
2. The method for preparing a cuprous iodide transparent conductive film according to claim 1, wherein: The method specifically comprises the following steps: Step (1). A single crystal silicon wafer with silicon dioxide grown on the surface is used as a substrate, and a copper film is deposited by magnetron sputtering to obtain a Cu / SiO2 / Si structure; Step (2). Spin-coating the anisole solution of PMMA onto the surface of the copper film obtained in step (1) by spin coating to obtain a PMMA film on the copper surface to obtain a PMMA / Cu / SiO2 / Si structure; Step (3). The product obtained in step (2) is placed in a glass container containing elemental iodine particles and kept warm at 5-40°C for 15-720 min to obtain a PMMA / CuI / SiO2 / Si structure; Step (4). The product of step (3) is dissolved in acetone to remove PMMA, thereby obtaining CuI grown on a surface having a silicon dioxide surface, namely, a CuI / SiO2 / Si structure.
3. The method for preparing a cuprous iodide transparent conductive film according to claim 1 or 2, wherein: The thickness of the deposited copper film is 10-300 nm.
4. The method for preparing a cuprous iodide transparent conductive film according to claim 1 or 2, wherein: The polymethyl methacrylate film is spin-coated, specifically a PMMA-anisole solution having a molar ratio of 0.05 to 1 mol / L.
5. The method for preparing a cuprous iodide transparent conductive film according to claim 1, wherein: The thickness of PMMA film is 50-200 nm.