Method for improving subthreshold swing of molecular transistor device

Abstract

The invention relates to the technical field of electronic devices, and particularly discloses a method for improving the subthreshold swing of a molecular transistor device, which comprises the following steps of: 1, spin-coating a molecular A solution on a sink containing an electrode array to obtain the molecular transistor device; 2, controlling the on-off state of the molecular transistor device through voltage, and calculating the sub-threshold swing in the molecular transistor device; according to the invention, based on the molecular design, the interference effect between electronic states is constructed, so that the switching state of the molecular transistor device can be controlled under a smaller voltage, and the improvement of the subthreshold swing in the molecular transistor device is calculated; the invention provides a molecular structure design-based method for improving the sub-threshold swing of a molecular transistor device, which has important significance for future electronic components.

Description

Technical Field

[0001] The invention belongs to the technical field of electronic devices, and in particular relates to a method for improving the subthreshold swing of a molecular transistor device. Background Art

[0002] In a transistor, when the gate voltage is less than the threshold voltage, the device is completely off and the source-drain current is very small. When the gate voltage reaches the threshold voltage, the source-drain current increases and the transistor is in the on state. Generally, a small change in gate voltage can cause the current to change by several orders of magnitude. The magnitude of this change reflects the ability of the gate-controlled switch and is called subthreshold leakage current. The size of the subthreshold swing determines the efficiency of the transistor switch.

[0003] As an electronic component at the current limit of size, single-molecule transistors have attracted widespread attention. Generally, in molecular transistors, when the Fermi surface is at the energy level of the molecular state based on gate voltage regulation, the transistor is in the on state; when the Fermi surface is far away from the energy level of the molecular state, the transistor is in the off state. Among them, the broadening of the electronic state of the molecular energy level limits the efficiency of transistor switching and affects the subthreshold swing in the transistor. Summary of the Invention

[0004] The object of the present invention is to provide a method for increasing the subthreshold swing of a molecular transistor device, so as to solve the problems raised in the above background technology.

[0005] To achieve the above object, the present invention provides the following technical solutions:

[0006] A method for increasing the subthreshold swing of a molecular transistor device, comprising:

[0007] Follow these steps:

[0008] Step 1: Spin-coat the molecule A solution onto a substrate containing an electrode array to obtain a molecular transistor device;

[0009] Step 2: Control the switching state of the molecular transistor device through voltage and calculate the subthreshold swing in the molecular transistor device.

[0010] Preferably, the size of the molecule A is less than 10 nm.

[0011] Preferably, the molecule A includes path 1 and path 2.

[0012] Preferably, the electronic states between the path 1 and the path 2 may interfere with each other.

[0013] Preferably, the molecular structures of the pathway 1 and the pathway 2 are the same.

[0014] Preferably, the molecular structures of pathway 1 and pathway 2 are different.

[0015] Compared with the prior art, the present invention has the following beneficial effects:

[0016] The present invention is based on molecular design and constructs the interference effect between electronic states, thereby enabling the switching state of molecular transistor devices to be controlled at a lower voltage and calculating the improvement in the subthreshold swing in molecular transistor devices. The present invention proposes a method for improving the subthreshold swing of molecular transistor devices based on molecular structure design, which is of great significance to future electronic components. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 Schematic diagram of non-interference switching of the molecular transistor device of the present invention;

[0018] Figure 2 A schematic diagram of a switch after interference is performed on the molecular transistor device of the present invention; DETAILED DESCRIPTION

[0019] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0020] Example 1:

[0021] A method for increasing the subthreshold swing of a molecular transistor device, comprising:

[0022] Follow these steps:

[0023] Step 1: Spin-coat the molecule A solution onto a substrate containing an electrode array to obtain a molecular transistor device;

[0024] Establish an in-situ device electrical measurement device and test the device's IV curve using a high-precision current and voltage meter 6430;

[0025] Using a 2450 high-precision voltmeter, we applied an electric field to control the IV characteristics of the device and recorded the switching changes of the device under a certain source-drain bias voltage and the source-drain current with respect to the gate voltage.

[0026] Step 2: Control the switching state of the molecular transistor device through voltage and calculate the subthreshold swing in the molecular transistor device.

[0027] Furthermore, the size of molecule A is less than 10 nm.

[0028] Furthermore, molecule A includes path 1 and path 2.

[0029] Furthermore, the electronic states between path 1 and path 2 will interfere.

[0030] Furthermore, the molecular structures of Pathway 1 and Pathway 2 are the same.

[0031] Example 2:

[0032] A method for increasing the subthreshold swing of a molecular transistor device, comprising:

[0033] Follow these steps:

[0034] Step 1: Spin-coat the molecule A solution onto a substrate containing an electrode array to obtain a molecular transistor device;

[0035] Step 2: Control the switching state of the molecular transistor device through voltage and calculate the subthreshold swing in the molecular transistor device.

[0036] Furthermore, the size of molecule A is less than 10 nm.

[0037] Furthermore, molecule A includes path 1 and path 2.

[0038] Furthermore, the electronic states between path 1 and path 2 will interfere.

[0039] Furthermore, the molecular structures of pathway 1 and pathway 2 are different.

[0040] The experiment is as follows:

[0041] There is no interference between the devices with the same molecular structure in path 1 and path 2, and the switching results are as follows: Figure 1 As shown;

[0042] There is interference between the devices with different molecular structures in path 1 and path 2, and the switching results are as follows Figure 2 As shown;

[0043] By calculating the subthreshold swing in non-interference and interference molecular transistor devices respectively, it can be concluded that the subthreshold swing in the molecular transistor device after interference is much larger than the subthreshold in the non-interference molecular transistor device.

[0044] The present invention is based on molecular design and constructs the interference effect between electronic states, thereby enabling the switching state of molecular transistor devices to be controlled at a lower voltage and calculating the improvement in the subthreshold swing in molecular transistor devices. The present invention proposes a method for improving the subthreshold swing of molecular transistor devices based on molecular structure design, which is of great significance to future electronic components.

[0045] While embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions, and variations may be made to these embodiments without departing from the principles and spirit of the invention, and that the scope of the invention is defined by the appended claims and their equivalents.

Claims

1. A method for increasing the subthreshold swing of a molecular transistor device, characterized in that: Includes the following steps: Step 1: Spin-coat the molecule A solution onto a substrate containing an electrode array to obtain a molecular transistor device; Step 2: Control the switching state of the molecular transistor device through voltage and calculate the subthreshold swing in the molecular transistor device.

2. The method for increasing the subthreshold swing of a molecular transistor device according to claim 1, wherein: The size of the molecule A is less than 10 nm.

3. The method for increasing the subthreshold swing of a molecular transistor device according to claim 2, wherein: The molecule A includes path 1 and path 2.

4. The method for increasing the subthreshold swing of a molecular transistor device according to claim 3, wherein: The electronic states between the path 1 and the path 2 may interfere.

5. The method for increasing the subthreshold swing of a molecular transistor device according to claim 4, characterized in that: The molecular structures of the pathway 1 and the pathway 2 are the same.

6. The method for increasing the subthreshold swing of a molecular transistor device according to claim 4, characterized in that: The molecular structures of the pathway 1 and the pathway 2 are different.

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