Magnetic memory device

Abstract

A magnetic memory device includes: a first magnetic layer having a fixed magnetization direction; a layer containing a predetermined element that contains at least one predetermined element selected from the group consisting of bismuth (Bi), antimony (Sb), and tellurium (Te); a second magnetic layer disposed between the first magnetic layer and the layer containing the predetermined element, in which the second magnetic layer has a variable magnetization direction; and a first non-magnetic layer disposed between the first magnetic layer and the second magnetic layer. The second magnetic layer includes: a first layer portion having a (100) crystal orientation; and a second layer portion disposed between the layer containing the predetermined element and the first layer portion, where the second layer portion has a (110) crystal orientation.

Description

[0001] Cross-reference to related applications

[0002] This application is based upon and claims the benefit of priority from Japanese Patent Application No. 2024-041923, filed on March 18, 2024, the entire contents of which are incorporated herein by reference. Technical Field

[0003]

[0014] Embodiments described herein generally relate to a magnetic memory device. Background Art

[0004] There has been proposed a magnetic memory device configured such that a plurality of magnetoresistive effect elements are integrated on a semiconductor substrate. Summary of the Invention

[0005] Embodiments provide a magnetic memory device including a magnetoresistive effect element having favorable properties.

[0006] According to an embodiment, a magnetic memory device includes: a first magnetic layer having a fixed magnetization direction; a layer containing a predetermined element containing at least one predetermined element selected from bismuth (Bi), antimony (Sb), and tellurium (Te); a second magnetic layer disposed between the first magnetic layer and the layer containing the predetermined element, wherein the second magnetic layer has a variable magnetization direction; and a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer. The second magnetic layer includes: a first layer portion having a (100) crystal orientation; and a second layer portion disposed between the layer containing the predetermined element and the first layer portion, wherein the second layer portion has a (110) crystal orientation. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] Figure 1 is a schematic cross-sectional view illustrating a basic configuration of a magnetic memory device according to a first embodiment.

[0008] Figure 2 is a schematic cross-sectional view illustrating a basic configuration of a modification of the magnetic memory device according to the first embodiment.

[0009] Figure 3 is a schematic cross-sectional view illustrating a basic configuration of a magnetic memory device according to a second embodiment.

[0010] Figure 4 is a schematic cross-sectional view illustrating a basic configuration of a first modification of the magnetic memory device according to the second embodiment.

[0011] Figure 5is a schematic cross-sectional view illustrating a basic configuration of a second modification of the magnetic memory device according to the second embodiment.

[0012] Figure 6 is a schematic cross-sectional view illustrating a basic configuration of a third modification of the magnetic memory device according to the second embodiment. DETAILED DESCRIPTION

[0013] Hereinafter, embodiments will be described with reference to the drawings.

[0014] First embodiment

[0015] Figure 1 is a schematic cross-sectional view illustrating a basic configuration of a magnetic memory device according to a first embodiment.

[0016] Figure 1 The structure illustrated in FIG is provided on a lower structure (not illustrated) including a semiconductor substrate and serves as a magnetoresistive effect element. Specifically, the magnetoresistive effect element serves as a magnetic tunneling junction (MTJ) element exhibiting perpendicular magnetization.

[0017] Figure 1 The magnetic memory device of the first embodiment illustrated in FIG. 1 includes a reference layer 10 as a magnetic layer, a storage layer 20 as a magnetic layer, a tunnel barrier layer 30 as a nonmagnetic layer, an offset cancellation layer 40 as a magnetic layer, an intermediate layer 50 as a nonmagnetic layer, and a layer 60 containing a predetermined element. The magnetic memory device has a multilayer structure in which these layers 10 to 60 are stacked one above the other.

[0018] More specifically, the reference layer 10, the memory layer 20, the tunneling barrier layer 30, and the intermediate layer 50 are disposed between the offset cancellation layer 40 and the layer containing the predetermined element 60. The memory layer 20 is disposed between the reference layer 10 and the layer containing the predetermined element 60, the tunneling barrier layer 30 is disposed between the reference layer 10 and the memory layer 20, and the intermediate layer 50 is disposed between the reference layer 10 and the offset cancellation layer 40.

[0019] Reference layer 10 is a ferromagnetic layer with a fixed magnetization direction and exhibits perpendicular magnetization. That is, the magnetization direction of reference layer 10 is perpendicular to the upper or lower surface of reference layer 10. Reference layer 10 contains at least one element selected from iron (Fe) and cobalt (Co), and may further contain boron (B). In the first embodiment, reference layer 10 is formed of a CoFeB layer containing Co, Fe, and B.

[0020] The storage layer 20 is a ferromagnetic layer having a variable magnetization direction and exhibits perpendicular magnetization. That is, the magnetization direction of the storage layer 20 is perpendicular to the upper surface or the lower surface of the storage layer 20. The storage layer 20 includes a first layer portion 21, a second layer portion 22, and a third layer portion 23.

[0021] The first layer portion 21 contacts the tunneling barrier layer 30 and has a (100) crystal orientation parallel to the upper or lower surface of the first layer portion 21. As used herein, "having a (100) crystal orientation" means including a crystal structure oriented in the (100) plane. That is, the lower and upper surfaces of the first layer portion 21 are oriented in the (100) plane. The first layer portion 21 contains at least one element selected from iron (Fe) and cobalt (Co), and may further contain boron (B). In the first embodiment, the first layer portion 21 is preferably formed of a CoFeB layer containing all of Co, Fe, and B.

[0022] The second layer portion 22 is disposed between the layer 60 containing the predetermined element and the first layer portion 21, contacts the layer 60 containing the predetermined element, and has a (110) crystal orientation. As used herein, "having a (110) crystal orientation" means including a crystal structure oriented in the (110) plane. That is, the lower and upper surfaces of the second layer portion 22 have a (110) crystal orientation. The second layer portion 22 contains at least one element selected from iron (Fe) and cobalt (Co). In the first embodiment, the second layer portion 22 may be formed of a CoFe layer containing both Co and Fe.

[0023] The third layer portion 23 is disposed between the first layer portion 21 and the second layer portion 22 and contacts the first layer portion 21 and the second layer portion 22. The third layer portion 23 is disposed between the first layer portion 21 and the second layer portion 22 to separate the first layer portion 21 from the second layer portion 22. Separating these layer portions enables clear distinction between the orientation direction of the first layer portion 21 as a (100) plane and the orientation direction of the second layer portion 22 as a (110) plane. The third layer portion 23 is also disposed so that the second layer portion 22 is easily oriented in the (110) plane.

[0024] The third layer portion 23 is made of a material containing (1) at least one element selected from ruthenium (Ru), platinum (Pt), iridium (Ir), palladium (Pd), rhodium (Rh), silver (Ag), and gold (Au), or (2) an amorphous magnetic material. As the amorphous magnetic material, for example, a material containing cobalt (Co), zirconium (Zr), and niobium (Nb) (CoZrNb) or a material containing cobalt (Co), zirconium (Zr), and molybdenum (Mo) (CoZrMo) can be used.

[0025] The tunneling barrier layer 30 is an insulating layer and is formed of an MgO layer containing magnesium (Mg) and oxygen (O). The tunneling barrier layer 30 has a (100) crystal orientation parallel to the upper surface or lower surface of the tunneling barrier layer 30. That is, the lower surface and the upper surface of the tunneling barrier layer 30 are oriented in the same (100) plane as the orientation of the first layer portion 21 of the memory layer 20.

[0026] The offset cancellation layer 40 is a ferromagnetic layer having a fixed magnetization direction and exhibits perpendicular magnetization. That is, the magnetization direction of the offset cancellation layer 40 is perpendicular to the upper or lower surface of the offset cancellation layer 40. The offset cancellation layer 40 has the function of canceling the magnetic field applied from the reference layer 10 to the storage layer 20, and the magnetization direction of the offset cancellation layer 40 is antiparallel to the magnetization direction of the reference layer 10. The offset cancellation layer 40 has a superlattice crystal structure in which cobalt (Co) and platinum (Pt) are alternately stacked one above the other.

[0027] The intermediate layer 50 is formed of an iridium (Ir) layer or a ruthenium (Ru) layer, and the reference layer 10 and the offset cancel layer 40 are synthetically antiferromagnetically coupled (SAF coupled) via the intermediate layer 50 .

[0028] The layer 60 containing a predetermined element is provided on the storage layer 20 and serves as a cap layer. The layer 60 containing the predetermined element contains at least one predetermined element selected from bismuth (Bi), antimony (Sb), and tellurium (Te). That is, the layer 60 containing the predetermined element may be formed of a Bi layer containing substantially only Bi, a Sb layer containing substantially only Sb, or a Te layer containing substantially only Te. Alternatively, the layer 60 containing the predetermined element may be formed of a layer containing substantially two or more elements selected from Bi, Sb, and Te. In addition to at least one predetermined element selected from Bi, Sb, and Te, the layer 60 containing the predetermined element may further contain other elements. In the first embodiment, the layer 60 containing the predetermined element is formed of a Bi layer, a Sb layer, and / or a Te layer.

[0029] As used herein, “substantially contain” or “substantially formed of” means that a small amount of elements other than the given element (for example, other than one of Bi, Sb, or Te) is allowed to be contained in the layer containing the given element. The same applies to the following description.

[0030] In the first embodiment, the layer 60 containing a predetermined element is provided so that the perpendicular magnetic anisotropy of the storage layer 20 increases and a magnetoresistive effect element having favorable properties is obtained. An explanation of such favorable properties will now be described.

[0031] In order to obtain a magnetoresistance effect element having favorable properties, the perpendicular magnetic anisotropy of the storage layer 20 is increased. However, as the size of the magnetoresistance effect element decreases, it becomes more difficult to obtain a storage layer 20 exhibiting high perpendicular magnetic anisotropy.

[0032] In the first embodiment, the layer 60 containing the predetermined element, which is formed of a Bi layer, an Sb layer, and / or a Te layer, is disposed adjacent to the memory layer 20. Bi, Sb, and Te exhibit significant spin-orbit coupling, and the Bi layer, Sb layer, and / or Te layer disposed adjacent to the memory layer 20 increases the interfacial magnetic anisotropy of the memory layer 20.

[0033] In the case where the Bi layer, the Sb layer, and / or the Te layer are provided adjacent to the storage layer 20, the storage layer 20 is oriented in the (110) plane so as to exhibit high perpendicular magnetic anisotropy. However, in order to obtain favorable tunneling magnetoresistance (TMR) properties, the storage layer 20 is oriented in the (100) plane at least near the interface between the storage layer 20 and the tunneling barrier layer 30, wherein the tunneling barrier layer 30 is oriented in the (100) plane.

[0034] In the first embodiment, the first layer portion 21 of the storage layer 20 has a (100) crystal orientation parallel to the upper or lower surface of the first layer portion 21. The second layer portion 22 of the storage layer 20 has a (110) crystal orientation. Therefore, in the first embodiment, the first layer portion 21 ensures a high TMR, and the second layer portion 22 increases the perpendicular magnetic anisotropy. That is, the first layer portion 21 adjacent to the tunneling barrier layer 30 ensures a high TMR, and the second layer portion 22 exhibiting high perpendicular magnetic anisotropy increases the perpendicular magnetic anisotropy of the entire storage layer 20.

[0035] Use of the predetermined element-containing layer 60 containing at least one predetermined element selected from Bi, Sb, and Te generally results in advantages similar to those described above.

[0036] In the first embodiment, the third layer portion 23 is provided between the first layer portion 21 and the second layer portion 22, so that the orientation direction of the first layer portion 21 and the orientation direction of the second layer portion 22 are effectively distinguished from each other. That is, the first layer portion 21 is oriented in the (100) plane, which is the same as the orientation of the tunneling barrier layer 30, and the second layer portion 22 is oriented in the (110) plane, thereby achieving high perpendicular magnetic anisotropy based on the layer 60 containing the predetermined element.

[0037] In order to obtain the structure described above, first form Figure 1 10 to 60 of the multilayer structure illustrated in FIG. In this preliminary multilayer structure, the region corresponding to the first layer portion 21 of the memory layer 20 is in an amorphous state. That is, in the preliminary multilayer structure, boron is uniformly distributed over the entire region corresponding to the first layer portion 21, and therefore, the region corresponding to the first layer portion 21 is in an amorphous state. The layer structure of the preliminary multilayer structure except for the region corresponding to the first layer portion 21 is similar to Figure 1 The layer structure in the multilayer structure illustrated in . In the preliminary structure, the crystal orientation of the second layer portion 22 is differentiated from the crystal orientation of the first layer portion 21 due to the insertion of the third layer portion 23 .

[0038] As a result of the heat treatment performed on this preliminary multilayer structure, boron in the region corresponding to the first layer portion 21 diffuses outward, and the region corresponding to the first layer portion 21 changes from an amorphous state to a crystalline state. Specifically, the first layer portion 21 becomes oriented in the (100) plane, which is the same as the orientation of the tunnel barrier layer 30. Thus, Figure 1 The multi-layer structure illustrated in FIG.

[0039] Figure 2 is a schematic cross-sectional view illustrating a basic configuration of a modification of the magnetic memory device according to the first embodiment.

[0040] The basic structure of the modified embodiment is similar to that of the first embodiment. While the magnetoresistance effect element of the first embodiment is a top-free magnetoresistance effect element configured such that the storage layer 20 is located above the reference layer 10, the modified embodiment is a bottom-free magnetoresistance effect element configured such that the storage layer 20 is located below the reference layer 10. Therefore, the stacking order of layers 10 to 60 in the modified embodiment is opposite to that of the first embodiment. Furthermore, in the modified embodiment, layer 60 containing a predetermined element serves as the lower layer.

[0041] As described above, the basic structure of the modification is similar to that of the first embodiment, and the modification also obtains advantages similar to those of the first embodiment.

[0042] Second embodiment

[0043] Next, a magnetic memory device according to a second embodiment will be described. Basic matters are similar to those in the first embodiment, and description of such basic matters described in the first embodiment will be omitted.

[0044] Figure 3 is a schematic cross-sectional view illustrating a basic configuration of a magnetic memory device according to a second embodiment.

[0045] As in the first embodiment, Figure 3 The structure illustrated in FIG is provided on a lower structure (not illustrated) including a semiconductor substrate and serves as a magnetoresistive effect element. As in the first embodiment, the magnetoresistive effect element is an MTJ element exhibiting perpendicular magnetization.

[0046] As in the first embodiment, Figure 3 The magnetic memory device of the second embodiment illustrated in FIG includes a reference layer 10, a storage layer 20, a tunneling barrier layer 30, an offset cancellation layer 40, an intermediate layer 50, and a layer containing a predetermined element 60. The magnetic memory device has a multilayer structure in which these layers 10 to 60 are stacked one above the other.

[0047] More specifically, the reference layer 10, the memory layer 20, the tunneling barrier layer 30, and the intermediate layer 50 are disposed between the offset cancellation layer 40 and the layer containing the predetermined element 60. The memory layer 20 is disposed between the reference layer 10 and the layer containing the predetermined element 60, the tunneling barrier layer 30 is disposed between the reference layer 10 and the memory layer 20, and the intermediate layer 50 is disposed between the reference layer 10 and the offset cancellation layer 40.

[0048] The basic configuration of the reference layer 10 , the tunnel barrier layer 30 , the offset cancel layer 40 , and the intermediate layer 50 is similar to that of the first embodiment.

[0049] The memory layer 20 contacts the tunneling barrier layer 30 and the layer 60 containing a predetermined element, and includes a layer portion having a (100) crystal orientation parallel to the upper or lower surface of the layer portion. That is, the memory layer 20 includes a layer portion oriented in the (100) plane. This layer portion oriented in the (100) plane contacts the tunneling barrier layer 30. The layer portion oriented in the (100) plane contains at least one element selected from iron (Fe) and cobalt (Co), and may further contain boron (B). In the second embodiment, the layer portion oriented in the (100) plane is preferably formed of a CoFeB layer containing Co, Fe, and B. Furthermore, in the second embodiment, the entire memory layer 20 is formed of the layer portion oriented in the (100) plane.

[0050] The predetermined element-containing layer 60 is disposed on the storage layer 20 and serves as a cap layer. The predetermined element-containing layer 60 contains (1) at least one first predetermined element selected from bismuth (Bi), antimony (Sb), and tellurium (Te), (2) at least one second predetermined element selected from magnesium (Mg), titanium (Ti), zirconium (Zr), hafnium (Hf), scandium (Sc), yttrium (Y), aluminum (Al), silicon (Si), cerium (Ce), praseodymium (Pr), samarium (Sm), gadolinium (Gd), terbium (Tb), and dysprosium (Dy), and (3) oxygen (O). In addition to the at least one first predetermined element, the at least one second predetermined element, and oxygen, the predetermined element-containing layer 60 may further contain other elements.

[0051] In the second embodiment, the predetermined element-containing layer 60 includes a portion substantially consisting of the at least one first predetermined element, the at least one second predetermined element, and oxygen (O). In the second embodiment, the entire predetermined element-containing layer 60 is substantially consisting of the at least one first predetermined element, the at least one second predetermined element, and oxygen.

[0052] Specifically, the layer 60 containing the predetermined element may be formed of a compound of the at least one first predetermined element, the at least one second predetermined element, and oxygen. The layer 60 containing the predetermined element may have a structure in which the at least one second predetermined element is added to the compound of the at least one first predetermined element and oxygen, or may have a structure in which the at least one first predetermined element is added to the compound of the at least one second predetermined element and oxygen.

[0053] As described above, in the second embodiment, the layer 60 containing the predetermined element is provided so that a magnetoresistive effect element having favorable properties is obtained. An explanation of such favorable properties will now be described.

[0054] As described above, Bi, Sb, and Te used as the first predetermined element exhibit extremely large spin-orbit coupling. Therefore, the layer 60 containing the first predetermined element is provided adjacent to the memory layer 20, so that the perpendicular magnetic anisotropy of the memory layer 20 increases.

[0055] However, an element that exhibits extremely large spin-orbit coupling (a first predetermined element, such as Bi, Sb, or Te) generally exhibits an extremely large spin pumping effect. Therefore, in a comparative example in which the layer 60 containing the predetermined element is formed from a layer containing only the first predetermined element, the damping value increases, and the reversal current of the magnetoresistive effect element (the current required to reverse the magnetization direction of the storage layer 20) increases.

[0056] The layer 60 containing the predetermined element is formed of an oxide layer containing the first predetermined element and oxygen, which reduces the damping value and the reversal current of the magnetoresistive effect element. However, without the addition of the second predetermined element, the coupling between the first predetermined element and oxygen is weak and therefore unstable. When the second predetermined element is added, the resulting coupling between the first and second predetermined elements and oxygen is stable. Specifically, in the comparative example in which the second predetermined element is not added, the oxygen contained in the layer 60 containing the predetermined element couples to the boron diffused out of the storage layer 20. Therefore, in the comparative example, a large amount of oxygen in the layer 60 containing the predetermined element is already bonded to boron, and for this reason, it is difficult for the coupling between the first predetermined element and oxygen to exist stably in the layer 60 containing the predetermined element. Therefore, the advantage of reducing the damping value obtained by the coupling between the first predetermined element and oxygen is weakened.

[0057] In the second embodiment, in addition to the first predetermined element and oxygen, the predetermined element-containing layer 60 further contains a second predetermined element. The coupling between the second predetermined element and oxygen is stronger than the coupling between boron and oxygen. Therefore, in the second embodiment, the coupling between boron and oxygen is reduced. Therefore, in the second embodiment, the first predetermined element and oxygen are stably present in the predetermined element-containing layer 60, and the damping value is sufficiently reduced.

[0058] As described above, in the second embodiment, the predetermined element-containing layer 60 is provided, which contains the first predetermined element, the second predetermined element, and oxygen. Consequently, the perpendicular magnetic anisotropy of the storage layer 20 is increased, the damping value is substantially reduced by improving the stability of the predetermined element-containing layer 60, and the increase in the inversion current is effectively minimized. Consequently, a magnetoresistive element having favorable properties is obtained.

[0059] Figure 4 is a schematic cross-sectional view illustrating a basic configuration of a first modification of the magnetic memory device according to the second embodiment.

[0060] The basic structure of the first modification is similar to that of the second embodiment. The magnetoresistance effect element of the second embodiment is a top free magnetoresistance effect element configured so that the storage layer 20 is located above the reference layer 10. The first modification is a bottom free magnetoresistance effect element configured so that the storage layer 20 is located below the reference layer 10. Therefore, the stacking order of layers 10 to 60 in the first modification is opposite to the stacking order of layers 10 to 60 in the second embodiment. In addition, in the first modification, the layer 60 containing the predetermined element is used as the lower layer.

[0061] As described above, the basic structure of the first modification is similar to that of the second embodiment, and the first modification also obtains advantages similar to those of the second embodiment.

[0062] Figure 5 is a schematic cross-sectional view illustrating a basic configuration of a second modification of the magnetic memory device according to the second embodiment.

[0063] The basic structure of the second modification is similar to that of the second embodiment. The predetermined element-containing layer 60 contains at least one first predetermined element, at least one second predetermined element, and oxygen (O). As the at least one first predetermined element and the at least one second predetermined element, elements similar to those described above in the second embodiment are used.

[0064] In the second modification, the predetermined element-containing layer 60 includes a first predetermined element-containing layer portion 61 containing the at least one first predetermined element and oxygen (O). The predetermined element-containing layer 60 further includes a second predetermined element-containing layer portion 62 disposed between the memory layer 20 and the first predetermined element-containing layer portion 61. The second predetermined element-containing layer portion 62 contains the at least one second predetermined element and oxygen (O). Specifically, the predetermined element-containing layer 60 includes (1) the first predetermined element-containing layer portion 61 substantially formed of the at least one first predetermined element and oxygen (O), and (2) the second predetermined element-containing layer portion 62 substantially formed of the at least one second predetermined element and oxygen (O). That is, an oxide bonded with the first predetermined element is used as the first predetermined element-containing layer portion 61, and an oxide bonded with the second predetermined element is used as the second predetermined element-containing layer portion 62.

[0065] As described above, the basic structure of the second modification is similar to that of the second embodiment, and the second modification also obtains advantages similar to those of the second embodiment.

[0066] Specifically, the first predetermined element-containing layer portion 61 increases the perpendicular magnetic anisotropy of the memory layer 20 and minimizes an increase in the inversion current. The second predetermined element-containing layer portion 62 reduces degradation of the stability of the predetermined element-containing layer 60 due to diffusion of, for example, boron.

[0067] In the case where the second predetermined element-containing layer portion 62 is too thick, the advantage of enhancing the perpendicular magnetic anisotropy of the storage layer 20 by the first predetermined element-containing layer portion 61 is weakened. For this reason, the thickness of the second predetermined element-containing layer portion 62 is preferably smaller than the thickness of the first predetermined element-containing layer portion 61. For example, the thickness of the second predetermined element-containing layer portion 62 may preferably be substantially equal to the thickness of a monolayer of a compound of the second predetermined element and oxygen.

[0068] Figure 6 is a schematic cross-sectional view illustrating a basic configuration of a third modification of the magnetic memory device according to the second embodiment.

[0069] The basic structure of the third modification is similar to that of the second embodiment and the second modification. The magnetoresistance effect element of the second modification is a top free magnetoresistance effect element configured so that the storage layer 20 is located above the reference layer 10. The third modification is a bottom free magnetoresistance effect element configured so that the storage layer 20 is located below the reference layer 10. Therefore, the stacking order of the layers 10 to 60 in the third modification is opposite to the stacking order of the layers 10 to 60 in the second modification. In addition, in the third modification, the layer 60 containing the predetermined element is used as the lower layer.

[0070] As described above, the basic structure of the third modification is similar to that of the second embodiment and the second modification. The third modification also obtains advantages similar to those of the second embodiment and the second modification.

[0071] The first and second embodiments have been described above, but the configurations of the first embodiment and the second embodiment can be combined. For example, the configuration of the predetermined element-containing layer 60 of the second embodiment can be applied to the predetermined element-containing layer 60 of the first embodiment. In this case, for example, the predetermined element-containing layer 60 is formed so that the percentages of the at least one first predetermined element, the at least one second predetermined element, and oxygen (O) are adjusted so that the second layer portion 22 oriented in the (110) plane as described in the first embodiment is obtained.

[0072] Although specific embodiments have been described, these embodiments are presented by way of example only and are not intended to limit the scope of the present disclosure. Indeed, the novel embodiments described herein may be embodied in a variety of other forms; furthermore, various omissions, substitutions, and changes in form may be made to the embodiments described herein without departing from the spirit of the present disclosure. The appended claims and their equivalents are intended to cover such forms or modifications as would fall within the scope and spirit of the present disclosure.

[0073] [Explanation of symbols]

[0074] 10: Reference layer

[0075] 20: Storage layer

[0076] 21: First layer part

[0077] 22: Second layer

[0078] 23: The third layer

[0079] 30: Tunneling barrier layer

[0080] 40: Offset Cancel Layer

[0081] 50: Middle layer

[0082] 60: Layer containing predetermined elements

[0083] 61: Layer portion containing the first predetermined element

[0084] 62: A layer portion containing a second predetermined element.

Claims

1. A magnetic memory device comprising: a first magnetic layer having a fixed magnetization direction; a predetermined element-containing layer containing at least one predetermined element selected from bismuth (Bi), antimony (Sb), and tellurium (Te); a second magnetic layer disposed between the first magnetic layer and the layer containing the predetermined element, wherein the second magnetic layer has a variable magnetization direction; and a first non-magnetic layer disposed between the first magnetic layer and the second magnetic layer; The second magnetic layer comprises a first layer portion having a (100) crystal orientation, and A second layer portion is provided between the layer containing the predetermined element and the first layer portion, the second layer portion having a (110) crystal orientation.

2. The magnetic memory device according to claim 1, wherein The second magnetic layer further includes a third layer portion disposed between the first layer portion and the second layer portion, the third layer portion being made of a material containing (1) at least one element selected from ruthenium (Ru), platinum (Pt), iridium (Ir), palladium (Pd), rhodium (Rh), silver (Ag) and gold (Au) or (2) an amorphous magnetic material.

3. The magnetic memory device according to claim 2, wherein The amorphous magnetic material is selected from (1) a material containing cobalt (Co), zirconium (Zr) and niobium (Nb) and (2) a material containing cobalt (Co), zirconium (Zr) and molybdenum (Mo).

4. The magnetic memory device according to claim 1, wherein The first layer portion of the second magnetic layer contains at least one element selected from iron (Fe) and cobalt (Co).

5. The magnetic memory device according to claim 4, wherein The first layer portion of the second magnetic layer further contains boron (B).

6. The magnetic memory device according to claim 1, wherein The second layer portion of the second magnetic layer contains at least one element selected from iron (Fe) and cobalt (Co).

7. The magnetic memory device according to claim 1, wherein The first layer portion of the second magnetic layer contacts the first non-magnetic layer.

8. The magnetic memory device according to claim 1, wherein The second layer portion of the second magnetic layer contacts the layer containing the predetermined element.

9. The magnetic memory device according to claim 1, wherein The layer containing the predetermined element is formed of (1) a bismuth (Bi) layer substantially containing only bismuth (Bi), (2) an antimony (Sb) layer substantially containing only antimony (Sb), or (3) a tellurium (Te) layer substantially containing only tellurium (Te).

10. A magnetic memory device comprising: a first magnetic layer having a fixed magnetization direction; A predetermined element-containing layer containing (1) at least one first predetermined element selected from bismuth (Bi), antimony (Sb), and tellurium (Te), (2) at least one second predetermined element selected from magnesium (Mg), titanium (Ti), zirconium (Zr), hafnium (Hf), scandium (Sc), yttrium (Y), aluminum (Al), silicon (Si), cerium (Ce), praseodymium (Pr), samarium (Sm), gadolinium (Gd), terbium (Tb), and dysprosium (Dy), and (3) oxygen (O); a second magnetic layer disposed between the first magnetic layer and the layer containing the predetermined element, wherein the second magnetic layer has a variable magnetization direction; and The first non-magnetic layer is disposed between the first magnetic layer and the second magnetic layer.

11. The magnetic memory device according to claim 10, wherein The second magnetic layer includes a layer portion having a (100) crystal orientation.

12. The magnetic memory device according to claim 11, wherein The layer portion of the second magnetic layer contains at least one element selected from iron (Fe) and cobalt (Co).

13. The magnetic memory device according to claim 12, wherein The layer portion of the second magnetic layer further contains boron (B).

14. The magnetic memory device according to claim 11, wherein The layer portion of the second magnetic layer contacts the first non-magnetic layer.

15. The magnetic memory device according to claim 10, wherein The second magnetic layer contacts the layer containing the predetermined element.

16. The magnetic memory device according to claim 10, wherein The layer containing the predetermined element contains a portion substantially formed by the at least one first predetermined element, the at least one second predetermined element and oxygen (O), and the portion of the layer containing the predetermined element contains elements other than the at least one first predetermined element, the at least one second predetermined element and oxygen (O).

17. The magnetic memory device according to claim 10, wherein The layer containing the predetermined element includes: (1) a layer portion containing a first predetermined element, which is basically formed by the at least one first predetermined element and oxygen (O); and (2) a layer portion containing a second predetermined element, which is arranged between the second magnetic layer and the layer portion containing the first predetermined element, and the layer portion containing the second predetermined element is basically formed by the at least one second predetermined element and oxygen (O).

18. The magnetic memory device according to claim 17, wherein The thickness of the layer portion containing the second predetermined element is smaller than the thickness of the layer portion containing the first predetermined element.

19. The magnetic memory device according to claim 10, wherein The first non-magnetic layer contains magnesium (Mg) and oxygen (O).

20. The magnetic memory device of claim 10, further comprising: a third magnetic layer, wherein the first magnetic layer and the third magnetic layer are disposed on opposite sides of the first non-magnetic layer; and The second non-magnetic layer is disposed between the second magnetic layer and the third magnetic layer.

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