High-transmittance ITO conductive glass and preparation method thereof

Abstract

The invention relates to the technical field of conductive glass, in particular to high-transmittance ITO conductive glass and a preparation method thereof.The high-transmittance ITO conductive glass is prepared by firstly cleaning a glass substrate, then sputtering a first SiO2 film on the surface of the glass substrate through the magnetron sputtering technology and then sputtering an ITO film on the surface of the first SiO2 film; and sequentially sputtering a second SiO2 thin film, a first Ag thin film, a third SiO2 thin film, a second Ag thin film, a fourth SiO2 thin film, a third Ag thin film and a fifth SiO2 thin film on the surface of the ITO thin film to finally obtain the high-transmittance ITO conductive glass. The method is simple and convenient in process and high in controllability, the used materials are cheap and easy to obtain, and the method has a good industrial application prospect. In the constructed structure, SiO2 and ITO cooperate to form a three-layer antireflection film system, and the visible light transmittance of the composite film layer can be remarkably improved. Meanwhile, by introducing multiple layers of ultrathin silver (Ag) films into the top layer SiO2, a composite nano conductive path is formed, and effective cross-layer transmission of carriers can be realized, so that the surface layer SiO2 is endowed with good surface conductivity.

Description

Technical Field

[0001] The present invention relates to the technical field of conductive glass, in particular to a high-transmittance ITO conductive glass and a preparation method thereof. Background Art

[0002] The rapid development of information display technology, optoelectronic devices, and smart terminal devices has placed increasingly stringent demands on the performance of transparent conductive materials. Indium tin oxide (ITO), currently the most widely used transparent conductive film material, is widely used in liquid crystal displays (LCDs), organic light-emitting diode displays (OLEDs), touchscreens, electrochromic devices, solar cells, photodetectors, and other fields due to its excellent conductivity and high light transmittance. In particular, ITO conductive glass is an indispensable core transparent electrode material in flat-panel display devices, such as plasma display panels (PDPs) and touch sensors. However, despite ITO's high carrier concentration and excellent visible light transmittance, its performance still faces several bottlenecks. First, the high refractive index of ITO (typically 2.0-2.2) differs significantly from that of air and glass, resulting in strong Fresnel reflection at its interface. This results in significant visible light loss, impacting the device's optical display quality, particularly poor visibility in sunlight. Secondly, ITO has limited electron mobility and often exists as a single layer or simple stacked layers in device structures, which easily forms an interface barrier to carrier transport, thereby limiting its uniform conductivity and response speed in large-area devices. In addition, traditional ITO thin film preparation technology often requires sacrificing its conductivity while improving its transmittance, making it difficult to simultaneously achieve a balance between high transmittance and low square resistance.

[0003] To address the above issues, existing technologies have attempted to improve the comprehensive performance of ITO conductive glass by adding anti-reflection films, optimizing interlayer designs, or introducing composite film systems. However, although these designs effectively improve the light transmittance of ITO conductive glass, the composite film layers used are all insulating dielectric film layers with low refractive index. After composite, the ITO conductive glass loses its conductivity. Summary of the Invention

[0004] To solve the above problems, the purpose of the present invention is to provide a high-transmittance ITO conductive glass and a preparation method thereof. By rationally regulating the film layer structure and utilizing the "carrier cross-layer transfer technology", the interface resistance is significantly reduced, the contact quality between the film layers is improved, and the electron transmission barriers existing in the traditional ITO multilayer structure are effectively broken. This provides a new technical path for the preparation of high-performance, high-transmittance ITO conductive glass, which has important theoretical value and application prospects.

[0005] The present invention provides a method for preparing high-transmittance ITO conductive glass, which specifically comprises the following steps: (1) After cleaning the glass substrate, a first SiO2 film is sputtered on the surface of the glass substrate using magnetron sputtering technology; (2) sputtering an ITO film on the surface of the first SiO2 film using magnetron sputtering technology; (3) Using magnetron sputtering technology, a second SiO2 film, a first Ag film, a third SiO2 film, a second Ag film, a fourth SiO2 film, a third Ag film, and a fifth SiO2 film are sputtered on the surface of the ITO film in sequence, and finally a high-transmittance ITO conductive glass is obtained.

[0006] Furthermore, the thickness of the first SiO2 film in step (1) is 80-130 nm.

[0007] Furthermore, during magnetron sputtering in step (1), the target material used is SiO2 target material, the deposition temperature is room temperature, the sputtering gas is an argon-oxygen mixture, the argon-oxygen ratio is 20:1, the sputtering pressure is 0.8-1.2 Pa, and the sputtering power is 80-120 W.

[0008] Furthermore, the thickness of the ITO film in step (2) is 80-130 nm.

[0009] Furthermore, in step (2), the target material used for magnetron sputtering is an ITO target material, the deposition temperature is 300-400° C., the sputtering gas is pure argon, the sputtering pressure is 0.8-1.2 Pa, and the sputtering power is 80-120 W.

[0010] Furthermore, in step (3), the thickness of the second SiO2 film, the third SiO2 film, the fourth SiO2 film, and the fifth SiO2 film is 20-30 nm.

[0011] Furthermore, when sputtering the second SiO2 film, the third SiO2 film, the fourth SiO2 film, and the fifth SiO2 film in step (3), the target material used is a SiO2 target material, the deposition temperature is room temperature, the sputtering gas is an argon-oxygen mixture, the argon-oxygen ratio is 20:1, the sputtering pressure is 0.8-1.2 Pa, and the sputtering power is 80-120 W.

[0012] Furthermore, in step (3), the thickness of the first Ag film, the second Ag film, and the third Ag film is 0.5 nm.

[0013] Furthermore, in step (3), when sputtering the first Ag film, the second Ag film, and the third Ag film, the target material used is a metallic silver target material, the deposition temperature is room temperature, the sputtering gas is pure argon, the sputtering pressure is 0.8-1.2 Pa, and the sputtering power is 20-40 W.

[0014] The present invention also provides a high-transmittance ITO conductive glass obtained according to the preparation method.

[0015] Compared with the prior art, the present invention has the following beneficial effects: (1) The method of the present invention has a simple process and strong controllability. The materials used are cheap and easily available, and have good prospects for industrial application. In the constructed structure, SiO2 and ITO work together to form a three-layer anti-reflection film system, which can significantly improve the visible light transmittance of the composite film layer. At the same time, SiO2 is an insulating material and its surface itself does not have conductivity. By introducing multiple layers of ultra-thin silver (Ag) film into the top layer of SiO2, a composite nano-conductive path is formed, which can achieve effective cross-layer transmission of carriers, thereby giving the surface SiO2 good surface conductivity.

[0016] (2) The resistance can be precisely adjusted by regulating the thickness of the ITO layer. The conductive glass based on this structure has excellent optoelectronic properties, with its surface resistance controlled at 10-20Ω / □ and visible light transmittance as high as 91-94%. This structure fully takes into account high transmittance and excellent conductivity, providing an effective solution for low-cost, high-performance transparent conductive glass. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 This is a schematic diagram of the cross-sectional structure of a high-transmittance ITO conductive glass of the present invention; Figure 2 This is the transmittance spectrum of the high-transmittance ITO conductive glass in Example 1 of the present invention. DETAILED DESCRIPTION

[0018] In order to better understand the content of the present invention, the present invention will be further described below in conjunction with specific examples and drawings. The following examples are implemented based on the technology of the present invention and provide detailed implementation methods and operating steps, but the scope of protection of the present invention is not limited to the following examples.

[0019] Please combine Figure 1 .

[0020] Example 1: (1) After cleaning the glass substrate, a first SiO2 film with a thickness of 120 nm was sputtered on the surface of the glass substrate using magnetron sputtering technology. The deposition temperature was room temperature, the sputtering gas was an argon-oxygen mixture with an argon-oxygen ratio of 20:1, the sputtering pressure was 1.0 Pa, and the sputtering power was 100 W. (2) After step (1), a 120 nm thick ITO film is sputtered on the surface of the first SiO2 film using magnetron sputtering technology, the deposition temperature is 350°C, the sputtering gas is pure argon, the sputtering pressure is 1.0 Pa, and the sputtering power is 100 W; (3) After step (2) is completed, the second SiO2 film, the first Ag film, the third SiO2 film, the second Ag film, the fourth SiO2 film, the third Ag film, and the fifth SiO2 film are sequentially sputtered on the surface of the ITO film using magnetron sputtering technology. The deposition temperature is room temperature. The thickness of the second, third, fourth, and fifth SiO2 films is 21 nm. When sputtering the second, third, fourth, and fifth SiO2 films, the sputtering gas is an argon-oxygen mixture with an argon-oxygen ratio of 20:1, a sputtering pressure of 1.0 Pa, and a sputtering power of 100 W. The thickness of the first, second, and third Ag films is 0.5 nm. When sputtering the first, second, and third Ag films, the sputtering gas is pure argon with a sputtering pressure of 1.0 Pa and a sputtering power of 30 W. Finally, a high-transmittance ITO conductive glass is obtained.

[0021] The surface resistance of the high-transmittance ITO conductive glass obtained by testing is 12.1Ω / □ and the transmittance is 92.3%.

[0022] Figure 2 This is the transmittance spectrum of the high-transmittance ITO conductive glass in this embodiment.

[0023] Example 2: (1) After cleaning the glass substrate, a first SiO2 film with a thickness of 80 nm was sputtered on the surface of the glass substrate using magnetron sputtering technology. The deposition temperature was room temperature, the sputtering gas was an argon-oxygen mixture with an argon-oxygen ratio of 20:1, the sputtering pressure was 0.8 Pa, and the sputtering power was 80 W. (2) After step (1), an ITO film with a thickness of 80 nm is sputtered on the surface of the first SiO2 film using magnetron sputtering technology, the deposition temperature is 300°C, the sputtering gas is pure argon, the sputtering pressure is 0.8 Pa, and the sputtering power is 80 W; (3) After step (2) is completed, the second SiO2 film, the first Ag film, the third SiO2 film, the second Ag film, the fourth SiO2 film, the third Ag film, and the fifth SiO2 film are sequentially sputtered on the surface of the ITO film using magnetron sputtering technology. The deposition temperature is room temperature. The thickness of the second, third, fourth, and fifth SiO2 films is 20 nm. When sputtering the second, third, fourth, and fifth SiO2 films, the sputtering gas is an argon-oxygen mixture with an argon-oxygen ratio of 20:1, a sputtering pressure of 0.8 Pa, and a sputtering power of 80 W. The thickness of the first, second, and third Ag films is 0.5 nm. When sputtering the first, second, and third Ag films, the sputtering gas is pure argon with a sputtering pressure of 0.8 Pa and a sputtering power of 20 W. Finally, a high-transmittance ITO conductive glass is obtained.

[0024] The surface resistance of the high-transmittance ITO conductive glass obtained by testing is 18.9Ω / □ and the transmittance is 92.7%.

[0025] Example 3: (1) After cleaning the glass substrate, a first SiO2 film with a thickness of 130 nm was sputtered on the surface of the glass substrate using magnetron sputtering technology. The deposition temperature was room temperature, the sputtering gas was an argon-oxygen mixture with an argon-oxygen ratio of 20:1, the sputtering pressure was 1.2 Pa, and the sputtering power was 120 W. (2) After step (1), a 130 nm thick ITO film is sputtered on the surface of the first SiO2 film using magnetron sputtering technology, the deposition temperature is 400°C, the sputtering gas is pure argon, the sputtering pressure is 1.2 Pa, and the sputtering power is 80 W; (3) After step (2) is completed, the second SiO2 film, the first Ag film, the third SiO2 film, the second Ag film, the fourth SiO2 film, the third Ag film, and the fifth SiO2 film are sequentially sputtered on the surface of the ITO film using magnetron sputtering technology. The deposition temperature is room temperature. The thickness of the second, third, fourth, and fifth SiO2 films is 30 nm. When sputtering the second, third, fourth, and fifth SiO2 films, the sputtering gas is an argon-oxygen mixture with an argon-oxygen ratio of 20:1, a sputtering pressure of 1.2 Pa, and a sputtering power of 120 W. The thickness of the first, second, and third Ag films is 0.5 nm. When sputtering the first, second, and third Ag films, the sputtering gas is pure argon with a sputtering pressure of 1.2 Pa and a sputtering power of 30 W. Finally, a high-transmittance ITO conductive glass is obtained.

[0026] The surface resistance of the high-transmittance ITO conductive glass obtained by testing is 11.5Ω / □ and the transmittance is 91.1%.

[0027] Example 4: (1) After cleaning the glass substrate, a first SiO2 film with a thickness of 120 nm was sputtered on the surface of the glass substrate using magnetron sputtering technology. The deposition temperature was room temperature, the sputtering gas was an argon-oxygen mixture with an argon-oxygen ratio of 20:1, the sputtering pressure was 1.0 Pa, and the sputtering power was 110 W. (2) After step (1), a 120 nm thick ITO film is sputtered on the surface of the first SiO2 film using magnetron sputtering technology, the deposition temperature is 350°C, the sputtering gas is pure argon, the sputtering pressure is 1.0 Pa, and the sputtering power is 100 W; (3) After step (2) is completed, the second SiO2 film, the first Ag film, the third SiO2 film, the second Ag film, the fourth SiO2 film, the third Ag film, and the fifth SiO2 film are sequentially sputtered on the surface of the ITO film using magnetron sputtering technology. The deposition temperature is room temperature. The thickness of the second, third, fourth, and fifth SiO2 films is 20 nm. When sputtering the second, third, fourth, and fifth SiO2 films, the sputtering gas is an argon-oxygen mixture with an argon-oxygen ratio of 20:1, a sputtering pressure of 1.0 Pa, and a sputtering power of 80 W. The thickness of the first, second, and third Ag films is 0.5 nm. When sputtering the first, second, and third Ag films, the sputtering gas is pure argon with a sputtering pressure of 1.0 Pa and a sputtering power of 20 W. Finally, a high-transmittance ITO conductive glass is obtained.

[0028] The surface resistance of the high-transmittance ITO conductive glass obtained by testing is 12.3Ω / □ and the transmittance is 92.6%.

[0029] Comparative Example 1: (1) This step is the same as step (1) in Example 1; (2) This step is the same as step (2) in Example 1; (3) After step (2) is completed, a second SiO2 film, a third SiO2 film, a fourth SiO2 film, and a fifth SiO2 film are sequentially sputtered on the surface of the ITO film using magnetron sputtering technology. The deposition temperature is room temperature. The thickness of the second, third, fourth, and fifth SiO2 films is 21 nm. When sputtering the second, third, fourth, and fifth SiO2 films, the sputtering gas is an argon-oxygen mixture with an argon-oxygen ratio of 20:1, a sputtering pressure of 1.0 Pa, and a sputtering power of 100 W, thereby finally obtaining ITO conductive glass.

[0030] The ITO conductive glass obtained by testing is non-conductive and has a light transmittance of 92.9%.

[0031] Comparative Example 2: (1) This step is the same as step (1) in Example 1; (2) This step is the same as step (2) in Example 1, and finally ITO conductive glass is obtained.

[0032] The surface resistance of the ITO conductive glass obtained by testing is 13.8Ω / □ and the transmittance is 84.3%.

[0033] Comparative Example 3: (1) This step is the same as step (1) in Example 1; (2) This step is the same as step (2) in Example 1. (3) After step (2), a second SiO2 film, a first Ag film, and a third SiO2 film are sequentially sputtered on the surface of the ITO film using magnetron sputtering technology. The deposition temperature is room temperature. The thickness of the second and third SiO2 films is 21 nm. When sputtering the second and third SiO2 films, the sputtering gas is an argon-oxygen mixture with an argon-oxygen ratio of 20:1, a sputtering pressure of 1.0 Pa, and a sputtering power of 100 W. The thickness of the first Ag film is 0.5 nm. When sputtering the first Ag film, the sputtering gas is pure argon, the sputtering pressure is 1.0 Pa, and the sputtering power is 30 W. Finally, ITO conductive glass is obtained.

[0034] The surface resistance of the ITO conductive glass obtained by testing is 12.5Ω / □ and the transmittance is 86.6%.

[0035] Comparative Example 4: (1) This step is the same as step (1) in Example 1; (2) This step is the same as step (2) in Example 1. (3) After step (2) is completed, a second SiO2 film, a first Ag film, a third SiO2 film, a second Ag film, and a fourth SiO2 film are sequentially sputtered on the surface of the ITO film using magnetron sputtering technology. The deposition temperature is room temperature. The thickness of the second, third, and fourth SiO2 films is 21 nm. When sputtering the second, third, and fourth SiO2 films, the sputtering gas is an argon-oxygen mixture with an argon-oxygen ratio of 20:1, a sputtering pressure of 1.0 Pa, and a sputtering power of 100 W. The thickness of the first and second Ag films is 0.5 nm. When sputtering the first and second Ag films, the sputtering gas is pure argon, the sputtering pressure is 1.0 Pa, and the sputtering power is 30 W. Finally, ITO conductive glass is obtained.

[0036] The surface resistance of the ITO conductive glass obtained by testing is 12.3 Ω / □ and the transmittance is 88.7%.

[0037] Table 1 shows the photoelectric performance test data of the high-transmittance ITO conductive glass prepared in Examples 1-4 and the ITO conductive glass prepared in Comparative Examples 1-4.

[0038] Table 1 As can be seen from Table 1, by overlapping the SiO2 and Ag layers at a certain thickness without affecting the conductivity of the ITO glass, the transmittance of the conductive glass can be effectively improved to above 91%.

[0039] The above description is merely an embodiment of the present invention and does not constitute any form of limitation to the present invention. The present invention may also have other forms of embodiments based on the above structures and functions, which are not listed here one by one. Therefore, any simple modification, equivalent changes, and modifications made to the above embodiments by any person skilled in the art in accordance with the technical essence of the present invention without departing from the scope of the technical solution of the present invention shall still fall within the scope of the technical solution of the present invention.

Claims

1. A method for preparing high-transmittance ITO conductive glass, characterized in that: The specific steps include: (1) After cleaning the glass substrate, a first SiO2 film is sputtered on the surface of the glass substrate using magnetron sputtering technology; (2) sputtering an ITO film on the surface of the first SiO2 film using magnetron sputtering technology; (3) Using magnetron sputtering technology, a second SiO2 film, a first Ag film, a third SiO2 film, a second Ag film, a fourth SiO2 film, a third Ag film, and a fifth SiO2 film are sputtered on the surface of the ITO film in sequence, and finally a high-transmittance ITO conductive glass is obtained.

2. The method for preparing the high-transmittance ITO conductive glass according to claim 1, wherein: The thickness of the first SiO2 film in step (1) is 80-130 nm.

3. The method for preparing the high-transmittance ITO conductive glass according to claim 1, wherein: During magnetron sputtering in step (1), the target material used is SiO2 target material, the deposition temperature is room temperature, the sputtering gas is an argon-oxygen mixture, the argon-oxygen ratio is 20:1, the sputtering pressure is 0.8-1.2 Pa, and the sputtering power is 80-120 W.

4. The method for preparing the high-transmittance ITO conductive glass according to claim 1, wherein: The thickness of the ITO film in step (2) is 80-130 nm.

5. The method for preparing the high-transmittance ITO conductive glass according to claim 1, wherein: In step (2), the magnetron sputtering target material used is an ITO target material, the deposition temperature is 300-400°C, the sputtering gas is pure argon, the sputtering pressure is 0.8-1.2 Pa, and the sputtering power is 80-120 W.

6. The method for preparing high-transmittance ITO conductive glass according to claim 1, wherein: In step (3), the thickness of the second SiO2 film, the third SiO2 film, the fourth SiO2 film, and the fifth SiO2 film is 20-30 nm.

7. The method for preparing high-transmittance ITO conductive glass according to claim 1, wherein: When sputtering the second SiO2 film, the third SiO2 film, the fourth SiO2 film, and the fifth SiO2 film in step (3), the target material used is a SiO2 target material, the deposition temperature is room temperature, the sputtering gas is an argon-oxygen mixture, the argon-oxygen ratio is 20:1, the sputtering pressure is 0.8-1.2 Pa, and the sputtering power is 80-120 W.

8. The method for preparing high-transmittance ITO conductive glass according to claim 1, wherein: In step (3), the thickness of the first Ag film, the second Ag film, and the third Ag film is 0.5 nm.

9. The method for preparing high-transmittance ITO conductive glass according to claim 1, wherein: When sputtering the first Ag film, the second Ag film, and the third Ag film in step (3), the target material used is a metallic silver target material, the deposition temperature is room temperature, the sputtering gas is pure argon, the sputtering pressure is 0.8-1.2 Pa, and the sputtering power is 20-40 W.

10. The high-transmittance ITO conductive glass obtained by the preparation method according to any one of claims 1 to 9.

Images