Highly integrated power semiconductor device

Abstract

The invention provides a highly integrated power semiconductor device, and belongs to the technical field of semiconductor devices. The problems that in the prior art, comprehensive consideration of a current loop, power loss and heat management is lacked, and the assembling and connecting strength is insufficient are solved. The highly-integrated power semiconductor device comprises a shell, a substrate, a plurality of loop modules arranged on the substrate and adopting upper and lower bridge design, a plurality of positioning holes arranged on the substrate, and a positioning piece, the lower part of the positioning piece is fixedly connected with the positioning holes, the upper part of the positioning piece is higher than the substrate, and the positioning piece is internally through and is provided with an internal thread. According to the scheme, the circuit layout is optimized, the energy efficiency and heat dissipation are improved, the electromagnetic interference is reduced, the integration level is higher, the overall size is reduced, the material cost is remarkably reduced, the structure is simple, production and assembly are more convenient, and the structural stability is enhanced while the assembly efficiency is improved.

Description

Technical Field

[0001] The present invention belongs to the technical field of semiconductor devices, and in particular relates to a highly integrated power semiconductor device. Background Art

[0002] In the field of power electronics and industrial automation, power semiconductor devices, as core components, undertake the important tasks of power conversion, distribution and control.

[0003] Chinese invention patent application number "2019109407726" discloses a bridge arm unit design for a power semiconductor module, comprising an upper bridge arm unit, a lower bridge arm unit, a connecting device, and a substrate. The upper and lower bridge arm units are arranged symmetrically on the substrate. By arranging the gate signal terminals at the center of symmetry, the control loop spurious parameters are balanced when multiple chips are connected in parallel, reducing the absolute value of the spurious parameters. However, the upper and lower bridge circuit designs of this solution lack comprehensive consideration of current loops, power loss, and thermal management, leading to electromagnetic interference (EMI) issues and poor heat dissipation under high loads, affecting system performance.

[0004] The Chinese invention patent with application number "2019106094927" discloses a method and structure for improving the insulation and heat dissipation performance of semiconductor devices relative to heat sinks, which discloses a solution of connecting a heat sink below the semiconductor device by passing a bolt through the semiconductor device. In addition, a PCB circuit board needs to be connected above the semiconductor device, and the connection between the semiconductor device and the upper PCB circuit board is generally achieved by welding, crimping, etc. In the above connection scheme, the semiconductor device, the heat sink, and the PCB circuit board are all independently connected, and the connection between the three lacks correlation. In actual use, the independent connection ends are easily affected by vibration and other factors, causing loosening and falling off, and the strength of the overall connection structure needs to be improved. Summary of the Invention

[0005] In view of the shortcomings of the existing technology, the purpose of the present invention is to provide a power semiconductor device that is highly integrated, has lower production cost, higher structural strength, is easy to produce and assemble, has better energy consumption and heat dissipation effects, and has stronger anti-electromagnetic interference ability.

[0006] The purpose of the present invention can be achieved through the following technical solutions: A highly integrated power semiconductor device includes a housing and a substrate, characterized in that: baffles are provided at intervals within the housing, which divide the substrate into several loop modules adopting an upper and lower bridge design, the loop modules including an upper bridge arm and a lower bridge arm, the upper and lower bridge arms respectively including several chips connected to the substrate, the substrate also being provided with a gate resistor, a thermistor, a power terminal and a signal terminal, the gate of each chip being connected to a corresponding gate resistor; the substrate being provided with several positioning holes, and also including a positioning piece, the lower portion of the positioning piece being fixedly connected to the positioning hole, the upper portion being higher than the substrate, the interior of the positioning piece being through-connected and provided with an internal thread.

[0007] The present invention wraps the substrate with a shell to provide support and fixation, and divides the substrate into several areas by a baffle, with a circuit module arranged in each area, forming a highly integrated structural layout, greatly reducing the overall volume and significantly reducing material costs. By providing positioning holes and positioning members, on the one hand, the precise installation of the components can be ensured, and the accurate alignment of the components can be ensured during the assembly process to avoid dislocation or offset; on the other hand, during subsequent assembly, the PCB circuit board and the heat sink need to be connected to the upper and lower parts of the device respectively. Under the coordinated action of the positioning holes and the positioning members, the PCB circuit board and the heat sink can be fixedly connected to the device by two bolts, or a long bolt can be passed through the PCB circuit board, the positioning member and the heat sink to achieve fixed connection. The PCB circuit board is subjected to a downward force, and the heat sink is subjected to an upward force, providing a stronger connection between the PCB circuit board, the substrate and the heat sink, forming a stable whole, improving assembly efficiency and enhancing structural stability. This convenient, low-cost, and high-structural-strength assembly structure does not exist in existing power semiconductor devices, and because of the presence of the positioning member, the positioning hole can be sealed to prevent leakage from the positioning hole during glue filling. In addition, within the same volume, this solution can install more chips to improve performance and achieve higher power output in a smaller volume. The modular design improves production efficiency and flexibility, reduces loss and waste, and achieves efficient utilization of raw materials, meeting the urgent needs of modern electronic systems for high performance, low cost and easy maintenance.

[0008] The circuit layout of this technical solution can simplify the circuit layout structure, ensure the effective flow of current, reduce uneven current distribution, optimize thermal management, reduce damage to devices caused by local overheating and thermal stress, and reduce the negative impact of parasitic effects on module performance by reducing the current loop area and electromagnetic interference. It improves the reliability and stability of the module, thereby improving the efficiency of the overall circuit and providing a basis for modular integration.

[0009] In this highly integrated power semiconductor device, the substrate is an aluminum substrate, consisting of a green oil layer, a copper layer, and an aluminum base layer from top to bottom. The green oil layer provides excellent electrical insulation; the copper layer serves as the circuit layer; and the aluminum base layer serves as the encapsulation and heat dissipation material for the circuit module. This aluminum substrate not only offers excellent mechanical strength and efficient heat dissipation, but also possesses high heat resistance, effectively preventing copper layer delamination. Furthermore, the use of an aluminum substrate can effectively reduce production costs, achieving cost reduction and efficiency improvement.

[0010] In this highly integrated power semiconductor device, the drain of the chip in the upper bridge arm is connected to the power supply through the power terminal, and the source is connected to the load; the source of the chip in the lower bridge arm is grounded, and the drain is connected to the load.

[0011] Furthermore, the housing is provided with a plurality of positioning grooves corresponding to the positioning holes, and the positioning grooves can cooperate with the positioning holes and the positioning members to further improve the stability of the structure.

[0012] In this highly integrated power semiconductor device, the baffle is S-shaped, with upper and lower cavities formed in the upper and lower portions of the baffle, respectively, for accommodating power terminals and / or signal terminals. A positioning block is formed between the upper and lower cavities, with positioning holes provided in the positioning block. The signal and power terminals are relatively large, so they are arranged around the upper and lower bridge arms. Simultaneously, the upper and lower cavities reserved by the S-shaped baffle accommodate the signal and / or power terminals within these cavities. This facilitates a more compact arrangement of the components within each circuit module, fully utilizing the space on the substrate and improving the level of integration.

[0013] Compared with the prior art, the technical effects of the present invention are: This solution uses a highly integrated design to divide the substrate into several areas, with a loop module set in each area, forming a highly integrated and compact structural layout. This greatly reduces the overall volume and significantly reduces material costs. During subsequent assembly, through the action of positioning parts, bolts can be passed through the PCB circuit board and the heat sink and fixed with the internal threads in the positioning parts, so that the PCB circuit board, substrate and heat sink are connected to form a stable whole, improving assembly efficiency while enhancing structural stability.

[0014] This solution uses an aluminum substrate as the packaging and heat dissipation material for the loop module, which not only provides excellent mechanical strength, but also has outstanding electrical insulation and efficient heat dissipation performance. It ensures the temperature control capability of the chip during long-term operation at high power and high frequency, effectively preventing the occurrence of overheating problems. In addition, the aluminum substrate can effectively reduce production costs and achieve cost reduction and efficiency improvement.

[0015] The circuit layout of this solution can simplify the circuit layout structure, ensure the effective flow of current, reduce uneven current distribution, optimize thermal management, reduce damage to devices caused by local overheating and thermal stress, reduce voltage spikes during operation, and reduce the negative impact of parasitic effects on module performance. Especially in high-voltage, high-current, and high-frequency scenarios, this layout can effectively reduce voltage drop and switching loss, suppress EMI, thereby improving the efficiency of the overall circuit and providing a foundation for modular integration. In addition, due to the reduction in current loop area, electromagnetic interference is reduced, module stability is improved, and the reliability and stability of the module are enhanced. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 It is a top view provided by the present invention.

[0017] Figure 2 It is a schematic diagram of the overall structure provided by the present invention.

[0018] Figure 3 It is an exploded view provided by the present invention.

[0019] Figure 4 It is a transverse cross-sectional view provided by the present invention.

[0020] In the figure, 1. outer shell; 11. baffle; 111. upper accommodating cavity; 112. lower accommodating cavity; 113. positioning block; 12. positioning groove; 2. substrate; 21. positioning hole; 22. positioning piece; 23. green oil layer; 24. copper layer; 25. aluminum base layer; 3. loop module; 31. upper bridge arm; 32. lower bridge arm; 33. chip; 4. gate resistor; 5. thermistor; 6. power terminal; 7. signal terminal; 8. PCB circuit board; 9. radiator. DETAILED DESCRIPTION

[0021] The following are specific embodiments of the present invention and the accompanying drawings to further describe the technical solutions of the present invention, but the present invention is not limited to these embodiments.

[0022] like Figure 1As shown, a highly integrated power semiconductor device includes a housing 1 and a substrate 2. The housing 1 encloses and secures the substrate 2. In this embodiment, two baffles 11 are spaced apart within the housing 1, dividing the substrate 2 into three mutually exclusive areas. Each area is provided with a circuit module 3. The substrate 2 is an aluminum substrate, which comprises, from top to bottom, a green oil layer 23, a copper layer 24, and an aluminum base layer 25. The green oil layer 23 provides good electrical insulation; the copper layer 24 serves as the circuit layer; and the aluminum base layer 25 serves as the packaging and heat dissipation material for the circuit module 3. This aluminum substrate not only provides excellent mechanical strength and efficient heat dissipation, but also has higher heat resistance than common substrates such as PCBs, effectively preventing copper layer peeling. Furthermore, the use of an aluminum substrate can effectively reduce production costs, achieving cost reduction and efficiency improvement. The baffle 11 is S-shaped, with an upper accommodating cavity 111 and a lower accommodating cavity 112 formed in the upper and lower portions of the baffle 11, respectively, for accommodating the power terminals 6 and / or the signal terminals 7. A positioning block 113 is formed between the upper accommodating cavity 111 and the lower accommodating cavity 112, and the positioning hole 21 is disposed in the positioning block 113. The signal terminals 7 and the power terminals 6 are relatively large in size. Arranging the signal terminals 7 and the power terminals 6 around the upper bridge arm 31 and the lower bridge arm 32, while simultaneously accommodating the signal terminals 7 and / or the power terminals 6 within the upper and lower accommodating cavities 112 reserved by the S-shaped baffle 11, facilitates a more compact arrangement of the components in each loop module 3, fully utilizes the space on the substrate 2, and improves the degree of integration.

[0023] Further, such as Figure 2 、 Figure 3 、 Figure 4 As shown, the substrate 2 is provided with four positioning holes 21 and also includes a positioning piece 22. The lower part of the positioning piece 22 is fixedly connected to the positioning hole 21, and the upper part is higher than the substrate 2. The interior of the positioning piece 22 is through and provided with an internal thread. By providing the positioning holes 21 and the positioning piece 22, on the one hand, the precise installation of the component can be ensured, and the accurate alignment of the components can be ensured during the assembly process to avoid dislocation or offset; on the other hand, during subsequent assembly, it is necessary to connect the PCB circuit board 8 and the heat sink 9 respectively at the upper and lower parts of the device. Under the action of the positioning piece 22, bolts can be passed through the PCB circuit board 8 and the heat sink 9 and fixed with the internal threads in the positioning piece 22. The PCB circuit board 8 is subjected to downward pressure under the action of the bolt cap, and a nut or threaded structure is preset in the heat sink 9. Under the action of the bolt, it is subjected to upward tension, so that the PCB circuit board 8, the substrate 2 and the heat sink 9 are connected to form a stable whole, thereby improving assembly efficiency and enhancing structural stability.

[0024] Further, such as Figure 1 、 Figure 2As shown, each loop module 3 adopts an upper and lower bridge design, including an upper bridge arm 31 and a lower bridge arm 32. The upper and lower bridge arms 32 respectively include three chips 33 connected to the substrate 2. The model and quantity of the chips 33 can be adjusted according to specific production requirements. The substrate 2 is also provided with a gate resistor 4, a thermistor 5, a power terminal 6 and a signal terminal 7. The drain of each chip 33 is welded to the corresponding conductive area of ​​the copper layer 24 of the aluminum substrate 2, and the source is connected to the corresponding conductive area of ​​the copper layer 24 of the aluminum substrate 2 through a bonding wire. The gate is connected to a corresponding gate resistor 4 to control the switching behavior of the gate and adjust the gate voltage, thereby ensuring the normal operation of the device. The thermistor 5 can realize temperature monitoring and overheating protection to ensure that the device can operate safely during operation. This solution encapsulates multiple chips 33 in a compact module, without the need to set up independent components for each chip 33, greatly reducing the overall volume and significantly reducing material costs. Furthermore, within the same volume, this solution can accommodate more chips 33 to improve performance, achieving higher power output within a smaller footprint. This modular design improves production efficiency and flexibility, reduces losses and waste, and achieves efficient utilization of raw materials, meeting the urgent needs of modern electronic systems for high performance, low cost, and ease of maintenance. Furthermore, the housing 1 is provided with several positioning slots 12 corresponding to the positioning holes 21. The positioning slots 12 can mate with the positioning holes 21 to further enhance structural stability.

[0025] In each bridge arm, the drains of the upper bridge chip 33 and the lower bridge chip 33 are connected. The drain of chip 33 in the upper bridge arm 31 is connected to the power supply through power terminal 6, while the source is connected to the load. Current flows from the drain to the source, and then into the load. Since the S of the upper bridge is the D of the lower bridge, the source of the upper bridge arm 31 is connected to the load, serving as the path for current to enter the load. The drain of the lower bridge arm 32 is connected to the load, and the source is grounded. When the gate of the lower bridge arm 32 receives a control signal, the lower bridge arm 32 is turned on, forming a complete current path. This circuit layout facilitates integrated and modular design, simplifies the circuit layout structure, ensures the effective flow of current, reduces uneven current distribution, and reduces electromagnetic interference by reducing the current loop area, improves module stability, optimizes thermal management, and enhances the module's reliability and service life.

[0026] The above embodiments are only preferred embodiments of the present invention and are not intended to limit the scope of protection of the present invention. Therefore, any equivalent changes made based on the structure, shape, and principle of the present invention should be included in the scope of protection defined by the claims of the present invention.

Claims

1. A highly integrated power semiconductor device, comprising a housing (1) and a substrate (2), characterized in that: Baffles (11) are provided at intervals within the housing (1), and the baffles (11) divide the substrate (2) into a plurality of loop modules (3) with upper and lower bridge designs; The base plate (2) is provided with a plurality of positioning holes (21), and further includes a positioning member (22), the positioning member (22) is fixedly connected to the positioning hole (21), the upper portion of the positioning member (22) is higher than the base plate (2), and the interior of the positioning member (22) is provided with an internal thread; The loop module (3) includes an upper bridge arm (31) and a lower bridge arm (32), and the upper bridge arm (31) and the lower bridge arm (32) respectively include a plurality of chips (33) connected to a substrate (2). The substrate (2) is also provided with a gate resistor (4), a thermistor (5), a power terminal (6) and a signal terminal (7), and the gate of each chip (33) is connected to a corresponding gate resistor (4).

2. The highly integrated power semiconductor device according to claim 1, wherein: The substrate (2) is an aluminum substrate, and the substrate (2) comprises a green oil layer (23), a copper layer (24) and an aluminum base layer (25) from top to bottom.

3. The highly integrated power semiconductor device according to claim 1, wherein: The drain of the chip (33) in the upper bridge arm (31) is connected to a power source through a power terminal (6), and the source is connected to a load; the source of the chip (33) in the lower bridge arm (32) is grounded, and the drain is connected to a load.

4. The highly integrated power semiconductor device according to claim 1, wherein: The housing (1) is provided with a plurality of positioning grooves (12) corresponding to the positioning holes (21).

5. The highly integrated power semiconductor device according to claim 4, characterized in that: The baffle (11) is S-shaped, and an upper accommodating cavity (111) and a lower accommodating cavity (112) are formed at the upper and lower parts of the baffle (11), respectively, for accommodating the power terminal (6) and / or the signal terminal (7), a positioning block (113) is formed between the upper accommodating cavity (111) and the lower accommodating cavity (112), and the positioning groove (12) is provided in the positioning block (113).

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