A method for fabricating an integrated device and its structure

Abstract

This invention discloses a method and structure for fabricating an integrated device. The method includes: dividing a substrate into a pre-modulator region, a post-modulator region, a pre-grating region, a gain region, and a post-grating region; fabricating a selected-area epitaxial mask pattern in the gain region, growing an AlInGaAs active layer in the region outside the mask pattern, and modulating the quantum well photofluorescence wavelength so that the wavelength of the modulator region is shorter than that of the gain region; removing the selected-area epitaxial mask pattern, and using quantum well hybridization technology to precisely control the quantum well photofluorescence wavelength of the pre-modulator region; growing an InGaAsP passive layer in the grating region using passive material bonding technology, and fabricating a sampling grating; finally forming a cladding layer, an electrical contact layer, and electrodes to achieve electrical isolation. This method solves the problem of integrating wide-wavelength tunable range with electrically absorbed modulator materials, simplifies the manufacturing process, reduces production costs, and provides a new solution for optical emission chips in optical communication and data center optical interconnects.

Description

Technical Field

[0001] This invention relates to the field of semiconductor optoelectronic integrated device technology, and in particular to a method for fabricating and structure of an integrated device. Background Technology

[0002] With the rapid development of optical communication and data center optical interconnects, higher requirements are being placed on optical transmitter chips, the core components of optical transmission. Higher bandwidth is desirable for single-channel optical transmitter chips; however, due to physical principles and technological limitations, the bandwidth of a single-channel optical transmitter chip has an upper limit. To overcome the bandwidth limitation of single-channel optical transmission, one approach is to employ integration technology, using monolithic integration of multifunctional devices to improve bandwidth; another approach is to use wavelength-tunable lasers, enabling multi-channel wavelength optical transmission on a single optical transmitter chip.

[0003] Existing technologies often employ multiple epitaxy processes to integrate wide-wavelength-range tunable lasers and electro-absorbers. However, each epitaxy requires precise control of process parameters such as growth temperature, growth rate, and reactive gas flow rate. Frequent parameter adjustments during multiple epitaxy cycles increase process complexity and uncertainty, and the frequent parameter variations make precise control of the entire epitaxial process difficult. Furthermore, multiple epitaxy cycles create interfaces between different epitaxial layers, and interface quality significantly impacts carrier transport and optical transmission between these layers. With increasing epitaxy cycles, interface defect density may increase; these defects scatter carriers and photons, reducing the device's photoelectric conversion efficiency and optical transmission efficiency.

[0004] Therefore, this invention proposes an integrated device fabrication method and structure. By combining selective epitaxial growth technology, quantum well hybrid technology, and passive material docking technology, a wide-wavelength tunable laser and two electroabsorption modulators are integrated. This solves the problem of integrating a wide-wavelength tunable range with electroabsorption modulator materials, and can improve the reliability of the integrated device and reduce manufacturing costs. Summary of the Invention

[0005] In view of this, the present invention provides an integrated device fabrication method and structure, which can solve the technical problems of interface quality degradation, complex process parameter control and low reliability that exist in the prior art when integrating a wide wavelength tunable range with an electroabsorption modulator through multiple epitaxy.

[0006] To achieve the above-mentioned technical objectives, the present invention adopts the following technical solution:

[0007] In a first aspect, the present invention provides a method for fabricating an integrated device, comprising:

[0008] The substrate is laid out by dividing the substrate surface into a front modulator region, a rear modulator region, a front grating region, a gain region, and a rear grating region along the length direction. A selected area epitaxial mask pattern is fabricated on the surface of the gain region. The selected area epitaxial mask pattern consists of two parallel stripes with the same length as the gain region and a preset spacing and width.

[0009] An AlInGaAs active layer is grown on the substrate surface in the area other than the selected region epitaxial mask pattern, and in the AlInGaAs active layer, the quantum well photofluorescence wavelengths of the front modulator region and the back modulator region are shorter than the photofluorescence wavelengths of the gain region.

[0010] Erosion removes the selected area epitaxial mask pattern, and quantum well hybrid mask pattern is fabricated in the area outside the pre-modulator region;

[0011] Phosphorus ion implantation is performed in the pre-modulator region using an ion implantation device. After implantation, rapid thermal annealing is performed to make the quantum well photofluorescence wavelength in the pre-modulator region shorter than that in the gain region.

[0012] The quantum well hybrid mask pattern is removed by erosion, and the docking mask pattern is created in the area outside the front and rear grating regions;

[0013] The active AlInGaAs layers in the front and rear grating regions are removed by etching, and passive InGaAsP layers are grown in the front and rear grating regions using a docking growth technique.

[0014] Remove the docking mask pattern and create sampling gratings in the front and rear grating areas;

[0015] A cladding layer and an electrical contact layer are sequentially grown on the surface of the entire device, and an inverted shallow ridge waveguide structure is fabricated on the cladding layer and the electrical contact layer.

[0016] Electrical isolation trenches are etched on the electrical contact layer to achieve electrical isolation between different areas;

[0017] P-side electrodes are fabricated on the electrical contact layers in each region. After the substrate is thinned, N-side electrodes are fabricated on the overall surface at the bottom of the substrate to complete the fabrication of the integrated device.

[0018] Furthermore, the quantum well photofluorescence wavelength of the post-modulator region is 30–70 nm shorter than that of the photofluorescence wavelength of the gain region.

[0019] Furthermore, the quantum well photofluorescence wavelength of the pre-modulator region is 60-100 nm shorter than that of the photofluorescence wavelength of the gain region.

[0020] Furthermore, the phosphorus ion implantation energy is 30~80 keV, and the implantation dose is 2~8×10⁻⁶. 13 / cm 3 ;

[0021] The rapid annealing temperature is 300 degrees Celsius.

[0022] Furthermore, the bandgap wavelength of the InGaAsP passive layer is 150-200 nm smaller than the photofluorescence wavelength of the gain region.

[0023] Furthermore, the AlInGaAs active layer comprises, from bottom to top, a lower waveguide layer, a multi-quantum well layer, and an upper waveguide layer. The thickness of the lower waveguide layer and the upper waveguide layer is 100 nm. The multi-quantum well layer is formed by alternating growth of multiple quantum well layers and barrier layers.

[0024] Furthermore, the step of creating a selected area epitaxial mask pattern on the surface of the gain region includes:

[0025] A 150 nm thick silicon dioxide film was grown on the device surface using plasma-enhanced chemical vapor deposition equipment, and a selected area epitaxial mask pattern was fabricated in the gain region using photolithography and wet etching techniques.

[0026] Furthermore, fabricating the quantum well hybrid mask pattern in the region outside the pre-modulator region includes:

[0027] A 500 nm thick silicon dioxide film was grown on the device surface using PECVD, and a silicon dioxide quantum well hybrid mask pattern outside the pre-modulator region was fabricated using photolithography and wet etching techniques.

[0028] Furthermore, the lengths of the front modulator region and the rear modulator region are both 150 micrometers, the length of the front grating region is 50 micrometers, the length of the gain region is 300 micrometers, and the length of the rear grating region is 250 micrometers. An electrical isolation region with a spacing of 50 micrometers is provided between adjacent regions.

[0029] On the other hand, the present invention also provides a structure of a photonic integrated device, which is fabricated using the preparation method described in the above technical solution. The device structure, from bottom to top, includes: an N-side electrode, a substrate, an active layer, a cladding layer, an electrical contact layer, and a P-side electrode.

[0030] The device is divided into a front modulator region, a rear modulator region, a front grating region, a gain region, and a rear grating region, starting from one side and proceeding along its length.

[0031] The bandgap width of the pre-modulator region relative to the gain region is achieved through quantum well hybridization technology, while the bandgap width of the post-modulator region relative to the gain region is achieved through selective epitaxial growth technology. The quantum well photofluorescence wavelength of the post-modulator region is 30-70 nm shorter than that of the gain region, and the quantum well photofluorescence wavelength of the pre-modulator region is 60-100 nm shorter than that of the gain region.

[0032] Compared with existing technologies, the integrated device fabrication method and structure provided by this invention have the following advantages:

[0033] (1) This method combines selective epitaxial growth technology, quantum well hybrid technology and passive material docking technology to achieve the integration of a wide wavelength tunable laser with two electroabsorption modulators, solving the problem of multiple epitaxy of wide wavelength tunable range and electroabsorption modulator material integration.

[0034] (2) The integration of three active layers with different bandgap widths—the gain region, the front and rear modulators—is achieved through a single selected region epitaxial growth and a single quantum well hybridization technique. The sampling grating technique is used to achieve a differentiated design of the modulator region and the gain region in terms of spectral characteristics, which is beneficial to improving the modulation efficiency. At the same time, it ensures that the gain region effectively amplifies the optical signal, and can achieve efficient modulation and amplification of the optical signal in the optical communication system.

[0035] (3) By integrating the sampling gratings of the front and rear grating areas and the two modulators, each modulator is responsible for a wavelength range, which can cover a wavelength modulation range of 40nm, thereby achieving the goal of external modulation of a tuning wavelength greater than 40nm, which can provide a new optical emission chip solution for optical communication and data center optical interconnection. Attached Figure Description

[0036] Figure 1 A schematic flowchart illustrating the fabrication method of the integrated device provided by the present invention;

[0037] Figure 2 This is a schematic diagram of the substrate and region division provided by the present invention;

[0038] Figure 3 A top view of the structure for fabricating a selected area epitaxial mask pattern on a substrate surface, provided by the present invention;

[0039] Figure 4 A schematic diagram of the device structure of the pre-phosphine ion implantation modulator region provided by the present invention;

[0040] Figure 5 A top view of the mating mask pattern outside the grating area provided by the present invention;

[0041] Figure 6 A schematic diagram of the structure of InGaAsP material obtained by using the butt joint growth technique to obtain the back grating region and the front grating region according to the present invention;

[0042] Figure 7 A schematic diagram of the structure after the growth cladding and electrical contact layer provided by the present invention;

[0043] Figure 8 A cross-sectional view of a fracturing shallow ridge waveguide structure fabricated on the cladding and electrical contact layers provided for this invention;

[0044] Figure 9 A side view of the device after it has been manufactured according to the present invention;

[0045] In the figure, 1-front modulator region, 2-rear modulator region, 3-front grating region, 4-gain region, 5-rear grating region, 10-substrate, 11-selective epitaxial mask pattern, 12-lower waveguide layer, 13-multiple quantum well layer, 14-upper waveguide layer, 15-docking mask pattern, 16-InGaAsP material, 17-grating, 18-cladding, 19-electrical contact layer, 20-P-side electrode, 21-N-side electrode. Detailed Implementation

[0046] Preferred embodiments of the present invention will now be described in detail with reference to the accompanying drawings, which form part of this application and are used together with the embodiments of the present invention to illustrate the principles of the present invention, but are not intended to limit the scope of the present invention.

[0047] Example 1

[0048] Please see Figure 1 , Figure 1 This embodiment illustrates a flowchart of a method for fabricating an integrated device, which includes:

[0049] Step S101: Perform surface layout on the substrate, dividing the substrate surface sequentially along the length direction into a front modulator region, a rear modulator region, a front grating region, a gain region, and a rear grating region; fabricate a selected area epitaxial mask pattern on the surface of the gain region, wherein the selected area epitaxial mask pattern is two parallel stripes with the same length as the gain region and a preset spacing and width.

[0050] Step S102: An AlInGaAs active layer is grown on the substrate surface in the portion other than the selected area epitaxial mask pattern, and in the AlInGaAs active layer, the quantum well photofluorescence wavelengths of the front modulator region and the back modulator region are shorter than the photofluorescence wavelengths of the gain region.

[0051] Step S103: Etch away the selected area epitaxial mask pattern and create a quantum well hybrid mask pattern in the area outside the pre-modulator region;

[0052] Step S104: Phosphorus ion implantation is performed in the pre-modulator region using an ion implantation device. After implantation, rapid thermal annealing is performed to make the quantum well photofluorescence wavelength in the pre-modulator region shorter than the photofluorescence wavelength in the gain region.

[0053] Step S105: Etch away the quantum well hybrid mask pattern and create a docking mask pattern in the area outside the front and rear grating regions;

[0054] Step S106: Etch away the AlInGaAs active layer in the front grating region and the rear grating region, and grow the InGaAsP passive layer in the front grating region and the rear grating region using the butt joint growth technique.

[0055] Step S107: Remove the docking mask pattern and create sampling gratings in the front and rear grating areas;

[0056] Step S108: Cladding and electrical contact layers are sequentially grown on the surface of the device, and a truncated shallow ridge waveguide structure is fabricated on the cladding and electrical contact layers;

[0057] Step S109: Etch electrical isolation trenches on the electrical contact layer to achieve electrical isolation between different areas;

[0058] Step S110: Fabricate P-side electrodes on the electrical contact layer in each region. After the substrate is thinned, fabricate N-side electrodes on the overall surface at the bottom of the substrate to complete the fabrication of the integrated device.

[0059] The integrated device fabrication method provided in this embodiment combines selected area epitaxial growth technology, quantum well hybridization technology, and passive material docking technology to achieve the integration of a wide-wavelength tunable laser with two electro-absorption modulators. This solves the problem of requiring multiple epitaxial growth steps for the integration of wide-wavelength tunable range and electro-absorption modulator materials. By using a single selected area epitaxial growth and a single quantum well hybridization technique, the integration of three active layers with different bandgap widths—the gain region, the front and rear modulators—can be achieved. Furthermore, by employing sampling grating technology, the target of external modulation with a tuning wavelength greater than 40nm can be achieved. This provides a new optical emission chip solution for optical communication and data center optical interconnection.

[0060] The following is combined Figures 2-9 The above steps will be demonstrated and explained in detail.

[0061] As a specific embodiment, the steps of this manufacturing method include:

[0062] (1) Select an N-type indium phosphide substrate 10, and according to the function of the integrated device, divide the surface of the substrate 10 along the length direction into a front modulator region 1, a rear modulator region 2, a front grating region 3, a gain region 4, and a rear grating region 5, as follows: Figure 2 As shown in the diagram, the lengths of the front modulator region 1 and the rear modulator region 2 are both 150 micrometers, the length of the front grating region 3 is 50 micrometers, the length of the gain region 4 is 300 micrometers, and the length of the rear grating region 5 is 250 micrometers. It should be noted that there are 50-micrometer-spaced electrical isolation regions between each functional region to facilitate subsequent etching of electrical isolation trenches to achieve electrical isolation between the regions.

[0063] (2) A 150 nm thick silicon dioxide film is grown on the surface of substrate 10 using plasma-enhanced chemical vapor deposition (PECVD). Selective epitaxial mask pattern 11 is fabricated in gain region 4 using photolithography and wet etching techniques, such as... Figure 3 As shown, Figure 3 This is a top view of the substrate surface. In the selected area epitaxial mask pattern 11, the length of the parallel strips is 300 micrometers, the width of the strips is 12 micrometers, and the spacing is 20 micrometers.

[0064] (3) An AlInGaAs active layer is grown on the surface of the substrate 10 except for the selected area epitaxial mask pattern 11 by a metal-organic chemical vapor deposition system (MOCVD), and in the AlInGaAs active layer, the quantum well photofluorescence wavelength of the front modulator region and the back modulator region is 30-70 nm shorter than the photofluorescence wavelength of the gain region.

[0065] The AlInGaAs active layer comprises, from bottom to top, a lower waveguide layer 12, a multiple quantum well layer 13, and an upper waveguide layer 14. The lower waveguide layer 12 and the upper waveguide layer 14 are 100 nm thick. The multiple quantum well layer 13 is formed by alternating growth of five pairs of 5 nm thick quantum well layers and 9 nm thick barrier layers, with the quantum well photofluorescence wavelength in the modulator region being 30-70 nm shorter than that in the gain region. It should be noted that the shorter photofluorescence wavelength in the modulator compared to the gain region serves the purpose of preventing laser absorption when the emitted laser is at zero bias voltage in the modulator region; however, when the modulator operates under directional bias, the bandgap changes, allowing it to absorb the emitted laser.

[0066] (4) Remove the selected area epitaxial mask pattern 11 by etching, and use PECVD to grow a 500nm thick silicon dioxide film on the device surface. Then, use photolithography and wet etching techniques to create a silicon dioxide quantum well hybrid mask pattern in the area outside the pre-modulator region 1.

[0067] (5) Phosphorus ion implantation is performed using an ion implantation device. The phosphorus ion implantation energy is 30~80keV and the implantation dose is 2~8×10⁻⁶. 13 / cm 3 After injection, rapid thermal annealing at 300 degrees Celsius is performed to achieve a quantum well photofluorescence wavelength in the pre-modulator region 1 that is 60-100 nm shorter than that in the gain region 4. Figure 4 As shown, Figure 4A side view of the device after phosphorus ion implantation is shown. The purpose of this step is explained here. Since each modulator has limited modulation capability, modulation efficiency is high when the modulation wavelength covers a range of 20 nm. If the bandwidth is too wide, the modulator will require a higher reverse bias voltage, which will reduce the modulation efficiency. Therefore, this invention uses two modulators in series. The front modulator is responsible for modulating the long wavelength 20 nm range laser, and the rear modulator is responsible for modulating the short wavelength 20 nm range laser.

[0068] (6) The quantum well hybrid mask pattern is removed by etching, and a docking mask pattern 15 is fabricated in the area outside the front grating region 3 and the rear grating region 5. The docking mask pattern 15 is a silicon dioxide docking mask pattern with a thickness of 250 nm. Figure 5 As shown, Figure 5 This is a top view of the device surface at this time.

[0069] (7) Use an inductively coupled plasma (ICP) device to etch away the AlInGaAs material in the back grating region 5 and the front grating region 3, i.e. the AlInGaAs active layer grown in step (3).

[0070] (8) Using docking growth technology, InGaAsP material 16 is grown in the rear grating region 5 and the front grating region 3. Its bandgap wavelength is 150-200 nm smaller than the photofluorescence wavelength of the gain region 4. Figure 6 As shown, by designing the photofluorescence wavelength of the grating region material to be more than 50 nm smaller than that of the gain region, the absorption of laser light during propagation in the grating region can be reduced, and the larger the difference, the smaller the absorption.

[0071] (9) Remove the docking mask pattern 15 by etching, and create sampling gratings 17 in the front grating area 3 and the rear grating area 5.

[0072] (10) A 1.5 μm thick InP cladding 18 and a 300 nm thick InGaAs electrical contact layer 19 are sequentially grown on the surface of the entire device. A truncated shallow ridge waveguide structure is then fabricated on the cladding 18 and the electrical contact layer 19. Please refer to [link to relevant documentation]. Figure 7 and Figure 8 , Figure 7 This is a side view of the device at this time. Figure 8 This is a cross-sectional view of the device.

[0073] (11) An electrical isolation trench with a width of 50 micrometers is etched on the electrical contact layer 19 of the ridge waveguide between each region to achieve electrical isolation between the front modulation region 1, the back modulation region 2, the front grating region 3, the gain region 4 and the back grating region 5.

[0074] (12) A P-side electrode 20 is fabricated on the electrical contact layer 19 of the front modulation region 1, the rear modulation region 2, the front grating region 3, the gain region 4, and the rear grating region 5. After the substrate 10 is thinned, an N-side electrode 21 is fabricated on the bottom of the entire device to complete the fabrication of the photonic integrated device, such as... Figure 9 As shown in the figure. The P-side electrode and the N-side electrode are both constructed of 50 nm thick titanium and 300 nm thick gold.

[0075] The method in this embodiment integrates three active layers with different bandgap widths—the gain region, the front and rear modulators—through a single selected area epitaxial growth and a single quantum well hybridization technique. It also employs sampling grating technology to achieve external modulation with a tuning wavelength greater than 40nm, providing a new optical emission chip solution for optical communication and data center optical interconnects.

[0076] Example 2

[0077] This invention also provides a structure for a photonic integrated device, which is fabricated using the integrated device fabrication method described in Example 1. Figure 9 As shown, the device comprises, from bottom to top, the following components: N-side electrode 21, substrate 10, active layer, cladding layer 18, electrical contact layer 19, and P-side electrode 20.

[0078] The laser is divided into a front modulator region 1, a rear modulator region 2, a front grating region 3, a gain region 4, and a rear grating region 5, starting from one side and extending along its length.

[0079] The bandgap of the front modulator region 1 relative to the gain region 4 is achieved through quantum well hybridization technology; the bandgap of the back modulator region 2 relative to the gain region 4 is achieved through selective epitaxial growth technology; the quantum well photofluorescence wavelength of the back modulator region 2 is 30-70 nm shorter than that of the gain region 4; and the quantum well photofluorescence wavelength of the front modulator region 1 is 60-100 nm shorter than that of the gain region 4.

[0080] In the integrated device structure provided in this embodiment, two modulators are connected in series. The front modulator is responsible for modulating laser light in the long wavelength range of 20nm, and the rear modulator is responsible for modulating laser light in the short wavelength range of 20nm. The two modulators can cover a wide wavelength tuning range of 40nm. Multiple functional regions are integrated on the same substrate, achieving high device integration and reducing device size. During device manufacturing, the integration of three active layers with different bandgap widths—the gain region, the front and rear modulators—can be achieved through a single selected area epitaxial growth and a single quantum well hybridization technique, providing a new optical emission chip solution for optical communication and data center optical interconnects.

[0081] The above description is only a preferred embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any changes or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in the present invention should be included within the scope of protection of the present invention.

Claims

1. A method for fabricating an integrated device, characterized in that, include: The substrate is laid out by dividing the substrate surface into a front modulator region, a rear modulator region, a front grating region, a gain region, and a rear grating region along the length direction. A selected area epitaxial mask pattern is fabricated on the surface of the gain region. The selected area epitaxial mask pattern consists of two parallel stripes with the same length as the gain region and a preset spacing and width. An AlInGaAs active layer is grown on the substrate surface in the area other than the selected region epitaxial mask pattern, and in the AlInGaAs active layer, the quantum well photofluorescence wavelengths of the front modulator region and the back modulator region are shorter than the photofluorescence wavelengths of the gain region. Erosion removes the selected area epitaxial mask pattern, and quantum well hybrid mask pattern is fabricated in the area outside the pre-modulator region; Phosphorus ion implantation is performed in the pre-modulator region using an ion implantation device. After implantation, rapid thermal annealing is performed to make the quantum well photofluorescence wavelength in the pre-modulator region shorter than that in the gain region. The quantum well hybrid mask pattern is removed by erosion, and the docking mask pattern is created in the area outside the front and rear grating regions; The AlInGaAs active layers in the front and rear grating regions are removed by etching, and InGaAsP passive layers are grown in the front and rear grating regions using a docking growth technique; the bandgap wavelength of the InGaAsP passive layer is 150-200 nm smaller than the photofluorescence wavelength of the gain region. Remove the docking mask pattern and create sampling gratings in the front and rear grating areas; A cladding layer and an electrical contact layer are sequentially grown on the surface of the entire device, and an inverted shallow ridge waveguide structure is fabricated on the cladding layer and the electrical contact layer. Electrical isolation trenches are etched on the electrical contact layer to achieve electrical isolation between different areas; P-side electrodes are fabricated on the electrical contact layers in each region. After the substrate is thinned, N-side electrodes are fabricated on the overall surface at the bottom of the substrate to complete the fabrication of the integrated device.

2. The method for fabricating an integrated device according to claim 1, characterized in that, The quantum well photofluorescence wavelength in the post-modulator region is 30–70 nm shorter than that in the gain region.

3. The method for fabricating an integrated device according to claim 1, characterized in that, The quantum well photofluorescence wavelength in the pre-modulator region is 60-100 nm shorter than that in the gain region.

4. The method for fabricating an integrated device according to claim 1, characterized in that, The phosphorus ion implantation energy is 30~80keV, and the implantation dose is 2~8×10⁻⁶. 13 / cm 3 ; The rapid thermal annealing temperature is 300 degrees Celsius.

5. The method for fabricating an integrated device according to claim 1, characterized in that, The AlInGaAs active layer comprises, from bottom to top, a lower waveguide layer, a multi-quantum well layer, and an upper waveguide layer. The thickness of the lower waveguide layer and the upper waveguide layer is 100 nm. The multi-quantum well layer is formed by alternating growth of multiple quantum well layers and barrier layers.

6. The method for fabricating an integrated device according to claim 1, characterized in that, The process of creating a selected area epitaxial mask pattern on the surface of the gain region includes: A 150 nm thick silicon dioxide film was grown on the device surface using plasma-enhanced chemical vapor deposition equipment, and a selected area epitaxial mask pattern was fabricated in the gain region using photolithography and wet etching techniques.

7. The method for fabricating an integrated device according to claim 1, characterized in that, The fabrication of the quantum well hybrid mask pattern in the region outside the pre-modulator region includes: A 500 nm thick silicon dioxide film was grown on the device surface using PECVD, and a silicon dioxide quantum well hybrid mask pattern outside the pre-modulator region was fabricated using photolithography and wet etching techniques.

8. The method for fabricating an integrated device according to claim 1, characterized in that, The lengths of the front modulator region and the rear modulator region are both 150 micrometers, the length of the front grating region is 50 micrometers, the length of the gain region is 300 micrometers, and the length of the rear grating region is 250 micrometers. An electrical isolation region with a spacing of 50 micrometers is provided between adjacent regions.

9. The structure of an integrated device, characterized in that, The device is fabricated using the preparation method described in any one of claims 1-8 above, and the device comprises, from bottom to top, an N-side electrode, a substrate, an active layer, a cladding layer, an electrical contact layer, and a P-side electrode; The device is divided into a front modulator region, a rear modulator region, a front grating region, a gain region, and a rear grating region, starting from one side and proceeding along its length. The bandgap width of the pre-modulator region relative to the gain region is achieved through quantum well hybridization technology, while the bandgap width of the post-modulator region relative to the gain region is achieved through selective epitaxial growth technology. The quantum well photofluorescence wavelength of the post-modulator region is 30-70 nm shorter than that of the gain region, and the quantum well photofluorescence wavelength of the pre-modulator region is 60-100 nm shorter than that of the gain region.

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