Solar thin film cell laser scribing detection and repair system and method

Abstract

The invention relates to the technical field of solar thin film cell manufacturing, and provides a solar thin film cell laser scribing detection and repair system and method. Aiming at the problems of lack of probe contact verification, low detection efficiency and asynchronous repair in the prior art, the system comprises a loading and unloading module, a probe module, a state detection circuit, a cross measurement circuit and a repair unit. The method comprises the steps of substrate transfer and fixation, probe contact, state detection, cross measurement and defect repair. Detection-positioning-repairing integration is realized through modularization cooperation, the detection accuracy and efficiency and the battery yield are improved, and the method is suitable for large-scale production of solar thin film batteries.

Description

Technical Field

[0001] This invention belongs to the field of solar thin-film battery manufacturing technology, specifically relating to a control system and method for resistance detection and short-circuit repair after laser scribing of solar thin-film batteries, applicable to quality inspection and defect repair of laser scribing process in photovoltaic cell production. Background Technology

[0002] Solar thin-film batteries are formed by depositing multiple layers of semiconductor thin films (such as CIGS, CdTe, etc.) on a glass substrate to create power generation units. To prevent short circuits between adjacent sub-cell areas, the continuous thin film needs to be cut into independent sub-cell areas using laser scribing. The quality of the laser scribing directly affects the photoelectric conversion efficiency and long-term reliability of the battery. If the scribing is too shallow (not penetrating) or contains burrs or micro-connections (tiny conductive connections), it can cause short circuits between adjacent sub-cell areas, reducing battery performance.

[0003] In existing technologies, the quality inspection of laser scribing mainly relies on manual visual inspection or offline electrical performance testing, which has the following problems: The probe contact status cannot be effectively verified: During the test, the electrical signal needs to be collected by the probe contacting the coating surface of the sub-cell area. However, the probe may not make full contact with the coating due to reasons such as offset or coating contamination, which will lead to the distortion of the test data (such as misjudging it as a scribing defect) and affect the accuracy of the test. Low efficiency of scribing quality inspection: Traditional methods require each sub-cell area to be inspected one by one, and cannot achieve batch or cross-measurement by switching circuits. The inspection efficiency is difficult to meet the needs of large-scale production. Untimely repair of short circuit hazards: After abnormal laser scribing is detected, the defect location needs to be manually located and repaired through additional equipment. The repair cannot be completed simultaneously within the detection system, resulting in extended production cycle time and reduced yield. Summary of the Invention

[0004] To address the shortcomings of the existing technology, the present invention aims to provide a laser scribing detection and repair system and method for solar thin-film batteries. According to an embodiment of the present invention, the first embodiment is provided as follows: A laser scribing inspection and repair system for thin-film solar cells includes: The loading and unloading module includes an air flotation device, a gripping module, and a vacuum adsorption component. The air flotation device can float or drop the glass substrate, the gripping module can grip and transfer the glass substrate, and the vacuum adsorption component can adsorb and fix the glass substrate. The probe module includes a first probe group, a second probe group, and a probe up-down displacement control module. The first probe group includes n first probes, and the second probe group includes m second probes, where n and m are positive integers greater than or equal to 1. The probe up-down displacement control module can control the first probe group and / or the second probe group to press down and fully contact the glass substrate. The first probe group and the second probe group are respectively arranged on both sides of the glass substrate. The probe state detection circuit module includes a state resistor and a state detection conduction circuit. The state resistor conducts the first and second probes on both sides of any sub-cell area through the state detection conduction circuit and obtains the initial detection resistance value for judging the probe contact state. The cross-measurement circuit module includes a quality inspection resistor and a cross-measurement conduction circuit. The quality inspection resistor conducts the cross-measurement conduction circuit to connect adjacent sub-cell regions on both sides of any laser scribing line and obtains the quality inspection resistance value. The repair unit filters abnormal resistance values ​​based on the quality inspection resistance values, locates abnormal laser scribing lines based on the abnormal resistance values, and repairs the abnormal laser scribing lines.

[0005] Furthermore, it also includes a switching circuit, which connects the probe status detection circuit module, the cross measurement circuit module, or the repair unit according to the control command of the control chip.

[0006] Furthermore, when the switching circuit switches from the probe state detection circuit module to the cross measurement circuit module, the quality inspection resistor and the state resistor are the same resistor. Only the state detection conduction circuit is disconnected and the cross measurement conduction circuit is connected.

[0007] Furthermore, the repair unit is a repair circuit module, which includes a repair conduction circuit. When the repair conduction circuit is turned on, it outputs a high current to eliminate the short-circuit risk of abnormal laser scribing.

[0008] According to an embodiment of the present invention, utilizing the solar thin-film battery laser scribing detection and repair system in the first solution provided by the present invention, a second solution is provided as follows: A method for laser scribing detection and repair of thin-film solar cells includes the following steps: S101: The glass substrate with laser scribing completed is lifted from the laser scribing station by the air flotation device, and the glass substrate is transferred to the detection station by the gripping module. The glass substrate is then adsorbed and fixed at the detection station by the vacuum adsorption component. S102: Synchronously control the first probe group and the second probe group to press down and fully contact the thin film coating on the surface of the glass substrate, wherein the first probe of the first probe group and the corresponding second probe of the second probe group respectively contact the two sides of the sub-cell area formed after laser scribing. S103: Turn on the first and second probes on any sub-battery area and obtain the sub-initial detection resistance value of the probe contact state of the sub-battery area; obtain the initial detection resistance value of the first probe group and the second probe group based on all sub-initial detection resistance values. S104: After the initial resistance value is passed, the adjacent sub-cell areas on both sides of any laser scribing line are connected and the sub-quality inspection resistance value is obtained. The quality inspection resistance value of the glass substrate is obtained based on all the sub-quality inspection resistance values. S105: Screen abnormal resistance values ​​based on the quality inspection resistance values, locate abnormal laser scribings based on the abnormal resistance values, and repair the abnormal laser scribings.

[0009] Furthermore, the step of determining the contact state of the first and second probes on the sub-cell region based on the initial detection resistance value includes: Obtain the initial detection resistance values ​​measured by the first and second probes on both sides of the sub-cell region; If the initial resistance value is infinite, an alarm will be triggered indicating abnormal probe contact. If the initial resistance value is within the preset initial test range, then good contact is confirmed.

[0010] Furthermore, the steps for determining the quality of laser scribing between adjacent sub-cell regions based on the sub-cell resistance value include: The x-th first probe and y-th second probe of adjacent sub-cell regions on both sides of any laser scribing line are turned on, where x=y+1 or x=y-1, and the sub-quality inspection resistance value is obtained. The baseline value is obtained based on the material of the glass substrate film. If the sub-quality inspection resistance value is outside the baseline value range, the quality of the laser scribing is judged to be a potential short circuit.

[0011] Furthermore, the step of locating and repairing the abnormal laser scribing based on the abnormal resistance value includes: The connection circuit of the first and second probes for locating abnormal resistance values ​​is switched to the repair circuit module. The first and second probes output high current to repair the short circuit hazard of abnormal laser scribing.

[0012] Furthermore, when an alarm indicates abnormal probe contact, the following steps are executed: Connect the kth first probe of the sub-cell region to the (k+1)th second probe of the adjacent sub-cell region and measure the cross resistance value R1; Connect the kth second probe of the sub-cell region to the (k+1)th first probe of the adjacent sub-cell region and measure the cross resistance value R2; If R1 is within the normal range and R2 is infinite, then the k-th second probe is determined to have poor contact. If R2 is within the normal range and R1 is infinite, then the first probe of the kth generation is considered to have poor contact. If both R1 and R2 are infinite, then it is determined that the k-th first probe and the k-th second probe have poor contact.

[0013] Furthermore, if the sub-inspection resistance value is outside the reference range, the following steps shall be performed: Preset resistance threshold range for laser scribing quality: The threshold range for micro-connection defects is: R < R_a, where R_a is the critical value of micro-connection; The threshold range for burr defects is: R_a < R < R_b, where R_b is the critical value for burrs; The threshold range for incomplete penetration defects is R > R_b; Compare the measured resistance value of the sub-quality inspection with the preset resistance threshold range for laser scribing quality: If R < R_a, it is determined to be a micro-connection defect, and the repair circuit module outputs micro-connection current to repair the micro-connection defect. If R_a < R < R_b, it is determined to be a glitch defect, and the repair circuit module outputs a glitch current to repair the glitch defect. If R > R_b, it is determined to be an incomplete scratch defect. The repair circuit module outputs an incomplete scratch current to repair the incomplete scratch defect.

[0014] Compared with the prior art, the unique advantages of the technical solution provided in this application are as follows: The glass substrate is automatically lifted, transferred, and fixed using an air flotation device, gripping module, and vacuum adsorption assembly, avoiding substrate displacement or contamination caused by manual operation and improving the stability and consistency of the testing process. A first probe group, a second probe group, and a probe vertical displacement control module ensure that the probe group is pressed down and contacts the coating surface on both sides of the sub-cell area, guaranteeing uniform contact pressure between the probe and the coating and reducing poor contact caused by probe displacement. A state resistance meter connects the probe pairs on both sides of the sub-cell area to obtain initial resistance values ​​to verify the probe contact status, avoiding misjudgments of test data due to poor probe contact and improving the accuracy of subsequent scribing quality testing. A quality inspection resistance meter connects adjacent sub-cell areas on both sides of the laser scribing to quickly obtain quality inspection resistance values, enabling batch or random inspection of laser scribing quality, significantly improving efficiency compared to traditional one-by-one inspection methods. Abnormal laser scribing is located by abnormal resistance values, and a repair circuit is simultaneously activated, outputting high current to eliminate short-circuit hazards, achieving integrated "detection-location-repair," shortening production cycle time and improving battery yield. Attached Figure Description

[0015] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0016] in: Figure 1 This is a structural block diagram of a laser scribing detection and repair system for a solar thin-film battery in one embodiment. Figure 2 This is a flowchart of a laser scribing detection and repair method for a solar thin-film battery in one embodiment; Figure 3 This is a schematic diagram of common laser scribing defects. Detailed Implementation

[0017] To enable those skilled in the art to better understand the technical solutions in this application, the technical solutions in the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of the embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0018] Example 1 The technical problem solved by this embodiment is that traditional methods require each sub-cell area to be inspected one by one, and cannot achieve batch or cross-measurement through circuit switching. The inspection efficiency is difficult to meet the needs of large-scale production. After abnormal laser scribing is detected, the defect location needs to be manually located and repaired through additional equipment. The repair cannot be completed synchronously within the inspection system, resulting in extended production cycle and reduced yield.

[0019] To address the aforementioned technical problems, this embodiment provides a laser scribing detection and repair system for thin-film solar cells, such as... Figure 1 As shown, it includes: The loading and unloading module includes an air flotation device, a gripping module, and a vacuum adsorption component. The air flotation device can float or drop the glass substrate, the gripping module can grip and transfer the glass substrate, and the vacuum adsorption component can adsorb and fix the glass substrate. Specifically, the air flotation device is an array-type air flotation platform, including 100 air nozzles evenly distributed on the platform surface. The air nozzles are connected to a compressed air source, and the airflow ejected from the air nozzles levitates the glass substrate to a height of 2mm above the platform surface. The gripping module is a six-axis robotic arm and gripping claw, with a vacuum suction cup assembly installed at the end. The suction cups provide a vacuum of -80kPa through a vacuum generator, which can stably grip glass substrates weighing ≤30kg. The vacuum adsorption component is an adsorption platform on the detection position, with 200 adsorption holes on the surface. The adsorption holes are connected to a vacuum pump through a vacuum tube, which can provide an adsorption force of -90kPa to ensure that the glass substrate is fixed without displacement.

[0020] The probe module includes a first probe group, a second probe group, and a probe up-down displacement control module. The first probe group includes n first probes, and the second probe group includes m second probes, where n and m are positive integers greater than or equal to 1. The probe up-down displacement control module can control the first probe group and / or the second probe group to press down and fully contact the glass substrate. The first probe group and the second probe group are respectively arranged on both sides of the glass substrate. Specifically, the first probe group and the second probe group each consist of 100 gold-plated copper probes, which are respectively arranged on the left and right sides of the glass substrate, corresponding to the two sides of the length direction of the elongated sub-cell area, and the probe spacing is consistent with the width of the sub-cell area; the probe up and down displacement control module includes two sets of servo motors, ball screws and pressure sensors, and each set of motors drives the first probe group and the second probe group to move along the Z-axis direction (perpendicular to the substrate surface). Specifically, after the glass substrate is fixed, the control chip sends a command to the servo motor to drive the first probe group and the second probe group to press down synchronously. When the probe tip contacts the substrate coating surface, the pressure sensor begins to provide feedback on the contact force. The control chip adjusts the pressing distance based on the pressure sensor signal until the contact force of each probe stabilizes at 0.5N±0.1N, ensuring that all probes are in full contact with the coating. After the test is completed, the servo motor drives the probe group to move up to the initial position.

[0021] The probe state detection circuit module includes a state resistor and a state detection conduction circuit. The state resistor conducts the first and second probes on both sides of any sub-cell area through the state detection conduction circuit and obtains the initial detection resistance value for judging the probe contact state. The cross-measurement circuit module includes a quality inspection resistor and a cross-measurement conduction circuit. The quality inspection resistor conducts the cross-measurement conduction circuit to connect adjacent sub-cell regions on both sides of any laser scribing line and obtains the quality inspection resistance value. Specifically, the quality inspection resistor and the status resistor share the same multimeter; the cross-measurement conduction circuit consists of 100×2 relays, each relay corresponding to a laser scribing line, and the relays are controlled to conduct through the GPIO port of the control chip.

[0022] The repair unit filters abnormal resistance values ​​based on the quality inspection resistance values, locates abnormal laser scribing lines based on the abnormal resistance values, and repairs the abnormal laser scribing lines. Specifically, the repair unit is a repair circuit module, which includes a repair conduction circuit. When the repair conduction circuit is turned on, it outputs a high current to eliminate the short circuit hazard of the abnormal laser scribing lines.

[0023] It also includes a switching circuit, which connects the probe status detection circuit module, the cross measurement circuit module, or the repair unit according to the control command of the control chip.

[0024] The glass substrate is automatically lifted, transferred, and fixed using an air flotation device, gripping module, and vacuum adsorption assembly, avoiding substrate displacement or contamination caused by manual operation and improving the stability and consistency of the testing process. A first probe group, a second probe group, and a probe vertical displacement control module ensure that the probe group is pressed down and contacts the coating surface on both sides of the sub-cell area, guaranteeing uniform contact pressure between the probe and the coating and reducing poor contact caused by probe displacement. A state resistance meter connects the probe pairs on both sides of the sub-cell area to obtain initial resistance values ​​to verify the probe contact status, avoiding misjudgments of test data due to poor probe contact and improving the accuracy of subsequent scribing quality testing. A quality inspection resistance meter connects adjacent sub-cell areas on both sides of the laser scribing to quickly obtain quality inspection resistance values, enabling batch or random inspection of laser scribing quality, significantly improving efficiency compared to traditional one-by-one inspection methods. Abnormal laser scribing is located by abnormal resistance values, and a repair circuit is simultaneously activated, outputting high current to eliminate short-circuit hazards, achieving integrated "detection-location-repair," shortening production cycle time and improving battery yield.

[0025] Example 2 The technical problem solved by this embodiment is that traditional methods require each sub-cell area to be inspected one by one, and cannot achieve batch or cross-measurement through circuit switching. The inspection efficiency is difficult to meet the needs of large-scale production. After abnormal laser scribing is detected, the defect location needs to be manually located and repaired through additional equipment. The repair cannot be completed synchronously within the inspection system, resulting in extended production cycle and reduced yield.

[0026] To address the aforementioned technical problems, this embodiment provides a method for detecting and repairing laser-etched lines on thin-film solar cells, such as... Figure 2 As shown, the steps include: S101: The glass substrate with laser scribing completed is lifted from the laser scribing station by the air flotation device, and the glass substrate is transferred to the detection station by the gripping module. The glass substrate is then adsorbed and fixed at the detection station by the vacuum adsorption component. S102: Synchronously control the first probe group and the second probe group to press down and fully contact the thin film coating on the surface of the glass substrate, wherein the first probe of the first probe group and the corresponding second probe of the second probe group respectively contact the two sides of the sub-cell area formed after laser scribing. S103: Turn on the first and second probes on any sub-battery area and obtain the sub-initial detection resistance value of the probe contact state of the sub-battery area; obtain the initial detection resistance value of the first probe group and the second probe group based on all sub-initial detection resistance values. The steps for determining the contact state of the first and second probes on the sub-cell area based on the initial detection resistance value include: Obtain the initial detection resistance values ​​measured by the first and second probes on both sides of the sub-cell region; If the initial resistance value is infinite, an alarm will be triggered indicating abnormal probe contact. If the initial resistance value is within the preset initial test range, then good contact is confirmed.

[0027] S104: After the initial resistance value is passed, the adjacent sub-cell areas on both sides of any laser scribing line are connected and the sub-quality inspection resistance value is obtained. The quality inspection resistance value of the glass substrate is obtained based on all the sub-quality inspection resistance values. The steps for determining the quality of laser scribing between adjacent sub-cell areas by checking the resistance value include: The x-th first probe and y-th second probe of adjacent sub-cell regions on both sides of any laser scribing line are turned on, where x=y+1 or x=y-1, and the sub-quality inspection resistance value is obtained. The baseline value is obtained based on the material of the glass substrate film. If the sub-quality inspection resistance value is outside the baseline value range, the quality of the laser scribing is judged to be a potential short circuit.

[0028] S105: Screen abnormal resistance values ​​based on the quality inspection resistance values, locate abnormal laser scribings based on the abnormal resistance values, and repair the abnormal laser scribings.

[0029] The glass substrate is automatically lifted, transferred, and fixed using an air flotation device, gripping module, and vacuum adsorption assembly, avoiding substrate displacement or contamination caused by manual operation and improving the stability and consistency of the testing process. A first probe group, a second probe group, and a probe vertical displacement control module ensure that the probe group is pressed down and contacts the coating surface on both sides of the sub-cell area, guaranteeing uniform contact pressure between the probe and the coating and reducing poor contact caused by probe displacement. A state resistance meter connects the probe pairs on both sides of the sub-cell area to obtain initial resistance values ​​to verify the probe contact status, avoiding misjudgments of test data due to poor probe contact and improving the accuracy of subsequent scribing quality testing. A quality inspection resistance meter connects adjacent sub-cell areas on both sides of the laser scribing to quickly obtain quality inspection resistance values, enabling batch or random inspection of laser scribing quality, significantly improving efficiency compared to traditional one-by-one inspection methods. Abnormal laser scribing is located by abnormal resistance values, and a repair circuit is simultaneously activated, outputting high current to eliminate short-circuit hazards, achieving integrated "detection-location-repair," shortening production cycle time and improving battery yield.

[0030] Example 3 This embodiment provides a preferred method for laser scribing detection and repair of thin-film solar cells, including the following steps: The glass substrate with laser scribing completed is lifted from the laser scribing station by an air flotation device, and then transferred to the detection station by a gripping module. At the detection station, the glass substrate is adsorbed and fixed by a vacuum adsorption component. The first probe group and the second probe group are synchronously controlled to press down and fully contact the thin film coating on the surface of the glass substrate. The first probe of the first probe group and the corresponding second probe of the second probe group respectively contact the two sides of the sub-cell area formed after laser scribing. The control chip sequentially turns on the analog switches of the 1st to 100th sub-cell areas; the state resistor measures the initial detection resistance value R_k of each sub-cell; Preset initial inspection range: 1Ω≤R_k≤100Ω; If R_k > 100Ω (considered as infinite), an alarm is triggered, and a cross-measurement positioning process is executed. For example, if probe k = 50 is abnormal, cross-connect probe k (first probe) and probe k (second probe) (fifth ... If all R_k values ​​are within the preset range, proceed to the next step.

[0031] The switching circuit module disconnects the status detection circuit, connects the cross measurement circuit, and sequentially activates the 1st to 99th laser scribing lines; A common resistance meter was used to measure the sub-quality inspection resistance value R'_k of each marked line; Short circuit hazard assessment: Preset reference value: CIGS thin film resistivity 1×10 -3 Ω·cm, normal scribing resistance ≥1000Ω; If R'_k < 1000Ω, the line is considered to have a short circuit risk. For example, the 30th line has R'_30 = 450Ω and is marked as abnormal. After the test is completed, all sub-test resistance values ​​are summarized to obtain the overall test resistance value of the substrate.

[0032] The defect type is further subdivided according to the R'_k value, with preset thresholds: micro-connection R < 100Ω, burr 100Ω ≤ R ≤ 500Ω, and incomplete scratch R > 500Ω; for example, the 30th scratch has R'_30 = 450Ω, and is judged as a burr defect; like Figure 3 The diagram shows the morphology of various defects. The glass substrate includes a glass layer 10 and a perovskite coating 11. Laser scribing is performed on the perovskite coating to obtain laser scribing lines 12. The micro-connection curve is shown in QX1, the burr defect is shown in QX2, and the incomplete scribing defect is shown in QX3.

[0033] For the ablation parameters of burr defects, the repair unit outputs a 2A current for 0.2s. The switching circuit connects to the repair circuit. The positive terminal of the constant current source is connected to the 30th probe and the negative terminal is connected to the 31st probe, outputting a 2A current for 0.2s. After repair, the R'_30 of the 30th line was remeasured and found to be 1200Ω (≥1000Ω), indicating successful repair. If the re-inspection is still abnormal, repeat the repair process.

[0034] Example 4 This embodiment further addresses the technical problem that, during probe status detection, when the initial resistance value of a certain sub-cell area is infinite, it can only be determined that the first or second probe in that area has poor contact, but it cannot pinpoint which probe is faulty. If accurate location is not possible, all probes must be manually checked one by one, which is time-consuming and labor-intensive, affecting detection efficiency.

[0035] Taking the initial detection anomaly in the 30th sub-cell area as an example, perform the following steps: Cross-continuity measurement R1: The control chip turns on the 30th first probe (P1-30) and the 31st second probe (P2-31), and the cross resistance value R1 is measured by the state resistance meter to be 85Ω, which is within the preset normal range of 1Ω≤R≤100Ω.

[0036] Cross-continuity measurement R2: The control chip connects the 30th second probe (P2-30) and the 31st first probe (P1-31) to measure the cross resistance value R2=∞ (>100Ω, considered infinite).

[0037] Defect location: R1 being normal (85Ω) indicates that P1-30 and P2-31 are making good contact; An infinite R2 indicates poor contact in P2-30 or P1-31. The initial inspection revealed an anomaly in the 30th sub-cell (a combination of P1-30 and P2-30). It was determined that P2-30 had poor contact, since P1-31 and P2-31 had been verified to have good contact in the R1 measurement.

[0038] By measuring the cross-conduction of R1 and R2, the specific probe with poor contact can be accurately located within 30 seconds, such as P2-30 in this case, avoiding manual troubleshooting and effectively improving detection efficiency. At the same time, after accurate location, the problematic probe can be directly replaced or adjusted, reducing the false repair rate and lowering maintenance costs.

[0039] Example 5 The technical problem further addressed by this embodiment is that traditional detection methods can only identify potential short-circuit hazards in laser scribing, but cannot distinguish specific defect types such as micro-connections, burrs, or incomplete scribing. If high-current repair is uniformly applied, micro-connection defects may be excessively melted, or incomplete scribing defects may be unable to be repaired due to insufficient current, affecting battery yield and production efficiency.

[0040] Taking the 45th laser scribing defect as an example, the measured sub-inspection resistance value R'_45 = 300Ω, and the benchmark value range is ≥1000Ω. The following steps should be performed: Preset defect threshold range: Based on experimental data of CIGS thin film material, the preset thresholds are: micro-connection critical value R_a = 100Ω; burr critical value R_b = 500Ω; that is: micro-connection defect: R' < 100Ω; burr defect: 100Ω ≤ R' ≤ 500Ω; incomplete scratch defect: R' > 500Ω.

[0041] Defect type determination: The measured R'_45 = 300Ω, which satisfies 100Ω≤R'≤500Ω, and is therefore determined to be a burr defect.

[0042] Targeted fixes: The repair unit outputs a glitch current parameter of 2A for 0.2s, which is applied to the glitch area by conducting through the 45th first probe (P1-45) and the 46th second probe (P2-46).

[0043] By subdividing defect types by resistance threshold and matching targeted repair parameters, the repair success rate has been increased from 75% to 95% compared to traditional methods: micro-connection defects are melted by 1A current in 0.1s to avoid excessive damage to the coating; incomplete scratching defects are enhanced by 3A current in 0.3s to increase the scratching depth, eliminating the need for secondary laser scratching; in this case, after the burr defect was repaired, the re-inspection showed R'_45=1200Ω (≥1000Ω), resulting in a 15%-20% improvement in yield and a shorter production cycle.

[0044] Those skilled in the art will understand that all or part of the processes in the above embodiments can be implemented by a computer program instructing related hardware. The program can be stored in a non-volatile computer-readable storage medium, and when executed, it can include the processes of the embodiments of the above methods. Any references to memory, storage, databases, or other media used in the embodiments provided in this application can include non-volatile and / or volatile memory. Non-volatile memory can include read-only memory (ROM), programmable ROM (PROM), electrically programmable ROM (EPROM), electrically erasable programmable ROM (EEPROM), or flash memory. Volatile memory can include random access memory (RAM) or external cache memory. By way of illustration and not limitation, RAM is available in various forms, such as static RAM (SRAM), dynamic RAM (DRAM), synchronous DRAM (SDRAM), dual data rate SDRAM (DDRSDRAM), enhanced SDRAM (ESDRAM), synchronous link DRAM (SLDRAM), Rambus direct RAM (RDRAM), direct memory bus dynamic RAM (DRDRAM), and memory bus dynamic RAM (RDRAM), etc.

[0045] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0046] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are specific and detailed, they should not be construed as limiting the scope of this patent application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this patent application should be determined by the appended claims.

Claims

1. A laser scribing detection and repair system for thin-film solar cells, characterized in that, include: The loading and unloading module includes an air flotation device, a gripping module, and a vacuum adsorption component. The air flotation device can float or drop the glass substrate, the gripping module can grip and transfer the glass substrate, and the vacuum adsorption component can adsorb and fix the glass substrate. The probe module includes a first probe group, a second probe group, and a probe up-down displacement control module. The first probe group includes n first probes, and the second probe group includes m second probes, where n and m are positive integers greater than or equal to 1. The probe up-down displacement control module can control the first probe group and / or the second probe group to press down and fully contact the glass substrate. The first probe group and the second probe group are respectively arranged on both sides of the glass substrate. The probe state detection circuit module includes a state resistor and a state detection conduction circuit. The state resistor conducts the first and second probes on both sides of any sub-cell area through the state detection conduction circuit and obtains the initial detection resistance value for judging the probe contact state. The cross-measurement circuit module includes a quality inspection resistor and a cross-measurement conduction circuit. The quality inspection resistor conducts the cross-measurement conduction circuit to connect adjacent sub-cell regions on both sides of any laser scribing line and obtains the quality inspection resistance value. The repair unit filters abnormal resistance values ​​based on the quality inspection resistance values, locates abnormal laser scribing lines based on the abnormal resistance values, and repairs the abnormal laser scribing lines.

2. The solar thin-film battery laser scribing detection and repair system according to claim 1, characterized in that, It also includes a switching circuit, which connects the probe status detection circuit module, the cross measurement circuit module, or the repair unit according to the control command of the control chip.

3. The solar thin-film battery laser scribing detection and repair system according to claim 2, characterized in that, When the switching circuit switches from the probe status detection circuit module to the cross measurement circuit module, the quality inspection resistor and the status resistor are the same resistor. Only the status detection circuit is disconnected and the cross measurement circuit is connected.

4. The solar thin-film battery laser scribing detection and repair system according to claim 1, characterized in that, The repair unit is a repair circuit module, which includes a repair conduction circuit. When the repair conduction circuit is turned on, it outputs a high current to eliminate the short-circuit risk of abnormal laser scribing.

5. A method for laser scribing detection and repair of thin-film solar cells, characterized in that, Including the following steps: The glass substrate with laser scribing completed is lifted from the laser scribing station by an air flotation device, and then transferred to the detection station by a gripping module. At the detection station, the glass substrate is adsorbed and fixed by a vacuum adsorption component. The first probe group and the second probe group are synchronously controlled to press down and fully contact the thin film coating on the surface of the glass substrate. The first probe of the first probe group and the corresponding second probe of the second probe group respectively contact the two sides of the sub-cell area formed after laser scribing. The first and second probes on any sub-cell area are turned on and the initial detection resistance value of the probe contact state of the sub-cell area is obtained. The initial detection resistance values ​​of the first probe group and the second probe group are obtained based on all the initial detection resistance values. After the initial resistance value is passed, the adjacent sub-cell areas on both sides of any laser scribing line are connected and the sub-quality inspection resistance value is obtained. The quality inspection resistance value of the glass substrate is obtained based on all the sub-quality inspection resistance values. Abnormal resistance values ​​are screened based on the quality inspection resistance values, and abnormal laser scribings are located and repaired based on the abnormal resistance values.

6. The method for laser scribing detection and repair of solar thin-film batteries according to claim 5, characterized in that, The steps for determining the contact state of the first and second probes on the sub-cell area based on the initial detection resistance value include: Obtain the initial detection resistance values ​​measured by the first and second probes on both sides of the sub-cell region; If the initial resistance value is infinite, an alarm will be triggered indicating abnormal probe contact. If the initial resistance value is within the preset initial test range, then good contact is confirmed.

7. The method for laser scribing detection and repair of solar thin-film batteries according to claim 5, characterized in that, The steps for determining the quality of laser scribing between adjacent sub-cell areas by checking the resistance value include: The x-th first probe and y-th second probe of adjacent sub-cell regions on both sides of any laser scribing line are turned on, where x=y+1 or x=y-1, and the sub-quality inspection resistance value is obtained. The baseline value is obtained based on the material of the glass substrate film. If the sub-quality inspection resistance value is outside the baseline value range, the quality of the laser scribing is judged to be a potential short circuit.

8. The method for laser scribing detection and repair of solar thin-film batteries according to claim 5, characterized in that, The steps of locating and repairing abnormal laser scribings based on abnormal resistance values ​​include: The connection circuit of the first and second probes for locating abnormal resistance values ​​is switched to the repair circuit module. The first and second probes output high current to repair the short circuit hazard of abnormal laser scribing.

9. The method for laser scribing detection and repair of solar thin-film batteries according to claim 6, characterized in that, When an alarm indicates abnormal probe contact, perform the following steps: Connect the kth first probe of the sub-cell region to the (k+1)th second probe of the adjacent sub-cell region and measure the cross resistance value R1; Connect the kth second probe of the sub-cell region to the (k+1)th first probe of the adjacent sub-cell region and measure the cross resistance value R2; If R1 is within the normal range and R2 is infinite, then the k-th second probe is determined to have poor contact. If R2 is within the normal range and R1 is infinite, then the first probe of the kth generation is considered to have poor contact. If both R1 and R2 are infinite, then it is determined that the k-th first probe and the k-th second probe have poor contact.

10. The method for laser scribing detection and repair of solar thin-film batteries according to claim 7, characterized in that, If the sub-inspection resistance value is outside the reference range, perform the following steps: Preset resistance threshold range for laser scribing quality: The threshold range for micro-connection defects is: R < R_a, where R_a is the critical value of micro-connection; The threshold range for burr defects is: R_a < R < R_b, where R_b is the critical value for burrs; The threshold range for incomplete penetration defects is R > R_b; Compare the measured resistance value of the sub-quality inspection with the preset resistance threshold range for laser scribing quality: If R < R_a, it is determined to be a micro-connection defect, and the repair circuit module outputs micro-connection current to repair the micro-connection defect. If R_a < R < R_b, it is determined to be a glitch defect, and the repair circuit module outputs a glitch current to repair the glitch defect. If R > R_b, it is determined to be an incomplete scratch defect. The repair circuit module outputs an incomplete scratch current to repair the incomplete scratch defect.

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