Photonic logic gate devices and logic circuits based on lateral heterojunctions

By using optoelectronic logic gate devices based on SnS and SnS2 heterojunctions and utilizing bipolar photoelectric response, the problem that traditional optoelectronic logic gate devices cannot realize complex logic functions is solved. Multiple logic operations can be performed on a single device, reducing system complexity and providing support for neuromorphic optical computing.

CN120882113BActive Publication Date: 2026-02-03NINGBO UNIV
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Patent Information

Application Number
CN202511366302.5
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2025-09-24
Publication Date
2026-02-03
Estimated Expiration
2045-09-24

AI Technical Summary

Technical Problem

Traditional optoelectronic logic gate devices are limited by the unidirectional transport characteristics of charge carriers, making it impossible to implement complex logic functions independently. This leads to increased system complexity and problems such as transmission delay and noise crosstalk.

Method used

The design incorporates optoelectronic logic gate devices based on lateral heterojunctions. By utilizing lateral heterojunctions formed from SnS and SnS2 materials, bipolar photoelectric response is achieved through a combination of excitation light of different wavelengths and external bias voltage. This enables the implementation of seven basic logic functions and multi-layer composite logic operations on a single device.

Benefits of technology

It reduces the complexity of photonic integrated circuits, avoids transmission delays and crosstalk noise in multi-device interconnection, and provides the hardware foundation for neuromorphic optical computing.

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Abstract

The application provides a kind of photoelectric logic gate device and logic circuit based on lateral heterojunction, belongs to photoelectric technology field.The photoelectric logic gate device includes substrate, functional layer, first electrode and second electrode.Functional layer is arranged on substrate, functional layer includes first material area and second material area, first material area includes SnS, second material area includes SnS2, and there is lateral heterojunction between first material area and second material area;First electrode is arranged on first material area;Second electrode is arranged on second material area.Photoelectric logic gate device generates photoelectric current with opposite polarity under the irradiation of first excitation light and second excitation light respectively, the wavelength of first excitation light is 280nm~564nm, and the wavelength of second excitation light is 564nm~1033nm.The photoelectric logic gate device of the application successfully constructs all-optical logic gate and hybrid photoelectric logic gate on a single device, thereby effectively reducing the complexity of photonic integrated circuit, and avoiding the transmission delay and crosstalk noise of multi-device interconnection.
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