Photodiode array, optical encoder receiving chip and optical sensing device

Abstract

The invention relates to the technical field of photoelectricity, and discloses a photodiode array, an optical encoder receiving chip and an optical sensing device. The photodiode array comprises a plurality of photodiode sets, each photodiode set comprises a first photodiode group and a second photodiode group, and the first photodiode group and the second photodiode group have a 90-degree phase difference and are configured into two columns; the photodiodes in the first photodiode group and the photodiodes in the second photodiode group have a 90-degree phase difference. According to the invention, the first photodiode group and the second photodiode group with the phase difference of 90 degrees are respectively configured into two columns, only one photodiode needs to be configured in one line of the coding wheel, and the line width of the coding wheel can be reduced by two times to the maximum extent, so that the bipolar process can meet the requirements of a high-speed LPI optical encoder receiving chip.

Description

Technical Field

[0001] This invention relates to the field of optoelectronic technology, and in particular to a photodiode array, an optical encoder receiver chip, and an optical sensor. Background Technology

[0002] Optical encoder receiver chips (ICs, Integrated Circuits) typically have several photodiodes built in. These photodiodes have two spherical wave powers, A and B, which conform to the optical encoder specifications and have a 90-degree phase difference.

[0003] The size of a photodiode is determined by the LPI (Line Per Inch) of the code wheel in an optical encoder. That is, a higher LPI value means more lines on the circumference of the code wheel. Higher LPI at higher speeds results in more lines per inch, thus narrowing the linewidth and making the photodiode's x-axis size smaller.

[0004] In optical encoder receiver chips, the photocurrent characteristics of photodiodes based on bipolar technology are superior to those of CMOS technology based on silicon (Si) substrates. Optical encoder receiver chips generally use bipolar technology. However, under normal circumstances, the minimum size of bipolar technology is limited to above 20um. Therefore, bipolar technology cannot be used for rectangular photodiodes and cannot meet the requirements of high-speed LPI (e.g., above 400 LPI) optical encoder receiver chips. Summary of the Invention

[0005] The present invention aims to provide a photodiode array, an optical encoder receiver chip, and a light sensor, which can solve the problem that existing bipolar processes cannot meet the requirements of high-speed LPI optical encoder receiver chips.

[0006] To solve the above-mentioned technical problems, a first aspect of the present invention provides a photodiode array, comprising: a plurality of photodiode sets, each photodiode set including a first photodiode group and a second photodiode group, the first photodiode group and the second photodiode group having a 90-degree phase difference and being configured in two columns, wherein the photodiodes in the first photodiode group and the photodiodes in the second photodiode group have a 90-degree phase difference.

[0007] Optionally, the photodiodes in the first photodiode group and the photodiodes in the second photodiode group have a width in the same direction that is less than or equal to the line width of one line of the encoding wheel.

[0008] Optionally, the photodiodes in the first photodiode group and the photodiodes in the second photodiode group are both designed using bipolar technology.

[0009] Accordingly, a second aspect of the present invention provides an optical encoder receiving chip, including a photodiode array and an encoding wheel. The photodiode array includes a plurality of photodiode sets, each of the photodiode sets including a first photodiode group and a second photodiode group. The first photodiode group and the second photodiode group have a 90-degree phase difference and are configured in two columns. The photodiodes in the first photodiode group and the photodiodes in the second photodiode group have a 90-degree phase difference.

[0010] The encoding wheel is used to sense the photocurrent of the photodiodes in the first photodiode group and the second photodiode group after the light source is input.

[0011] Optionally, the photodiodes in the first photodiode group and the photodiodes in the second photodiode group have a width in the same direction that is less than or equal to the line width of one line of the encoding wheel.

[0012] Optionally, the photodiodes in the first photodiode group and the photodiodes in the second photodiode group are both designed using bipolar technology.

[0013] Optionally, the optical encoder receiving chip further includes an amplifier electrically connected to the encoding wheel, used to receive and amplify the photocurrent of the photodiodes in the first and second photodiode groups output by the encoding wheel, to obtain the photocurrent output values ​​of the first and second photodiode groups with a 90-degree phase difference.

[0014] Optionally, the optical encoder receiving chip further includes an amplifier and a computing circuit; the amplifier is electrically connected to the encoding wheel and is used to receive the photocurrent of the photodiodes in the first photodiode group and the second photodiode group output by the encoding wheel and perform a first amplification to obtain the first amplified photocurrent;

[0015] The operational circuit is electrically connected to the amplifier and is used to receive the first amplified photocurrent output by the amplifier and perform a second amplification to obtain the photocurrent output values ​​of the first photodiode group and the second photodiode group with a 90-degree phase difference.

[0016] Accordingly, a third aspect of the present invention provides a light sensor device, including the optical encoder receiver chip described in the second aspect of the present invention.

[0017] Compared to existing technologies, this invention provides a photodiode array, an optical encoder receiver chip, and a photosensitive device. The photodiode array includes several photodiode sets, each photodiode set comprising a first photodiode group and a second photodiode group. The first and second photodiode groups have a 90-degree phase difference and are configured in two columns. The photodiodes in the first photodiode group and the photodiodes in the second photodiode group have a 90-degree phase difference. By configuring the first and second photodiode groups with a 90-degree phase difference into two columns, this invention requires only one photodiode per line of the encoding wheel, reducing the linewidth of the encoding wheel by up to half. This allows bipolar processes to meet the requirements of high-speed LPI optical encoder receiver chips, thus solving the problem that existing bipolar processes cannot meet the requirements of high-speed LPI optical encoder receiver chips. Attached Figure Description

[0018] One or more embodiments are illustrated by way of example with reference numerals in the accompanying drawings. These illustrations do not constitute a limitation on the embodiments. Elements with the same reference numerals in the drawings are denoted as similar elements. Unless otherwise stated, the figures in the drawings are not to be limited by scale.

[0019] Figure 1 This is a schematic diagram of the structure of an existing optical encoder receiver chip;

[0020] Figure 2 This is a schematic diagram of the photocurrent characteristics of an existing optical encoder receiver chip;

[0021] Figure 3 This is a schematic diagram of the isolation of a photodiode using a bipolar process;

[0022] Figure 4 This is a schematic diagram of a photodiode array provided by the present invention;

[0023] Figure 5 This is a schematic diagram of the structure of an optical encoder receiver chip provided by the present invention;

[0024] Figure 6 This is a schematic diagram of the photocurrent characteristics of an optical encoder receiving chip provided by the present invention;

[0025] Figure 7 This is a schematic diagram of the structure of a light sensor device provided by the present invention. Detailed Implementation

[0026] To facilitate understanding of the present invention, a more detailed description is provided below with reference to the accompanying drawings and specific embodiments. It should be noted that when an element is described as being "fixed to" another element, it can be directly on the other element, or one or more intermediate elements may exist between them. When an element is described as being "connected" to another element, it can be directly connected to the other element, or one or more intermediate elements may exist between them. The terms "upper," "lower," "inner," "outer," "bottom," etc., used in this specification indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the present invention. Furthermore, the terms "first," "second," "third," etc., are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0027] Unless otherwise defined, all technical and scientific terms used in this specification have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. The terminology used in this specification is for the purpose of describing particular embodiments only and is not intended to limit the invention. The term "and / or" as used in this specification includes any and all combinations of one or more of the associated listed items.

[0028] Furthermore, the technical features involved in the different embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other.

[0029] Optical encoder receiver chips (ICs, integrated circuits) typically incorporate several photodiodes. These photodiodes possess two spherical wave powers, A and B, with a 90-degree phase difference, conforming to optical encoder specifications. Generally, four photodiodes are used to form these 90-degree phase-difference photodiode configurations A and B, and these four photodiodes are arranged in multiple clusters to improve accuracy and jitter characteristics.

[0030] The size of a photodiode is determined by the LPI (Line Per Inch) of the code wheel in an optical encoder. That is, a higher LPI value means a larger number of lines on the circumference of the code wheel (e.g., 150 LPI means 150 lines per inch on the circumference of the code wheel; the line width determines the size of the photodiode). Higher LPI speeds result in more lines per inch, thus narrower line widths and a smaller photodiode size in the x-direction.

[0031] In optical encoder receiver chips, when using bipolar technology, the photocurrent characteristics of photodiodes are superior to those of silicon (Si)-based CMOS technology. However, the precision of bipolar technology is lower than that of CMOS technology. Therefore, there are limitations to reducing the size of the photodiode in the x-direction in bipolar technology. For example, in a typical 2µm bipolar process, the minimum x-direction dimension of the photodiode is limited to approximately 20µm. Figure 3 As shown, at 400 LPI, the linewidth of the encoder wheel is 30 μm. The minimum x-axis dimension of the two photodiodes (A / B) in a line is approximately 20 μm. Therefore, 15 photodiode positions are ultimately required. Typically, bipolar processes can be designed to be at least 20 μm wide; therefore, only bipolar processes can be used in high-speed LPI systems above 400 LPI.

[0032] CMOS technology offers higher precision than bipolar technology, making it suitable for high-speed LPI applications. However, CMOS photodiodes exhibit decreased sensitivity and are significantly more expensive than bipolar diodes, limiting their utility in cost-effective products. Furthermore, bipolar technology boasts superior operating voltage tolerance compared to CMOS, allowing bipolar-based optical encoder receivers to offer a wider range of operating voltage characteristics, even for the same chip.

[0033] Figure 1 This refers to the existing optical encoder receiver chip, which can output two power values, A and B, with a 90-degree phase difference, using existing photodiodes. A photodiode set consists of four photodiodes arranged in a rectangular column. The width of each photodiode in the x-direction is determined by its LPI (Limited Portion Size), and is calculated to be 25.4 mm / (2 * LPI) / 2.

[0034] Taking a 400 LPI photodiode as an example, the width of one photodiode in the x-direction is 25.4 mm / (2 * 400) / 2 = 16 μm. Therefore, under typical bipolar process technology, the minimum size of the bipolar process is limited to 20 μm. Consequently, the bipolar process cannot be used for rectangular photodiodes and cannot meet the requirements of high-speed LPI (e.g., 400 LPI and above) optical encoder receiver chips.

[0035] Figure 2 Showing with Figure 1In the same structure, when combined with the encoding wheel, the photocurrent characteristics of each photodiode are sensed after the light source is input through the encoding wheel. This is the photocurrent of each photodiode expressed on the time axis as the encoding wheel moves. That is, if the photocurrents input through the movement of the encoding wheel are amplified by an amplifier and a computational circuit, output values ​​A and B with a 90-degree phase difference can be obtained.

[0036] like Figure 3 As shown, in typical bipolar junction diode (BJD) fabrication, to isolate each photodiode, an isolation layer must be used at a certain distance, for example, 4-5 μm. Therefore, in BJD fabrication, the photodiode is a PN structure, and the epitaxial layer used as the n-type layer requires N-type isolation, which also needs to be isolated from the aforementioned isolation layer, also 4-5 μm. Since the width of the epitaxial layer in the X direction is also 5 μm, the total width is only about 20 μm. Therefore, the minimum dimension of a typical bipolar junction photodiode in the X direction is 20 μm, which means it is impossible to design such a device.

[0037] To address this, the present invention provides a photodiode array and an optical encoder receiver chip. The photodiodes in the photodiode array with a phase difference of 90 degrees are arranged in two columns. Compared with the existing method of arranging all photodiodes in the photodiode array in one column, the linewidth of the encoding wheel can be reduced by up to two times. This allows the bipolar process to meet the requirements of high-speed LPI optical encoder receiver chips, solving the problem that the existing bipolar process cannot meet the requirements of high-speed LPI optical encoder receiver chips.

[0038] To facilitate understanding of the above-mentioned inventive concept of the present invention, the above-mentioned inventive concept of the present invention will be described in more detail below with reference to the accompanying drawings and specific embodiments.

[0039] In one embodiment, such as Figure 4 As shown, the present invention provides a photodiode array 10, comprising: a plurality of photodiode sets, each photodiode set including a first photodiode group and a second photodiode group, the first photodiode group and the second photodiode group having a 90-degree phase difference and being configured in two columns, the photodiodes in the first photodiode group having a 90-degree phase difference with the photodiodes in the second photodiode group.

[0040] In this embodiment, the photodiode array differs from the prior art where all photodiodes are arranged in a single column. Instead, the first and second photodiode groups, with a phase difference of 90 degrees, are each arranged in two separate columns. The first photodiode group is positioned in the first column, and the second photodiode group in the second column. Because they are arranged in two columns, the width of the photodiodes in the first and second photodiode groups in the same direction (e.g., the x-direction) is less than or equal to the line width of one line of the encoding wheel, allowing one photodiode to be placed in one line of the encoding wheel (e.g., ...). Figure 5 (As shown). Therefore, compared with the existing method of arranging all photodiodes in a single column in the photodiode array, requiring two photodiodes in one line of the encoding wheel, this invention configures the first and second photodiode groups with a phase difference of 90 degrees into two columns respectively. Only one photodiode is needed in one line of the encoding wheel, and the linewidth of the encoding wheel can be reduced by up to half. This allows the bipolar process to meet the requirements of high-speed LPI optical encoder receiver chips, solving the problem that the existing bipolar process cannot meet the requirements of high-speed LPI optical encoder receiver chips.

[0041] In one embodiment, the first photodiode group and the second photodiode group have a 90-degree phase difference and are configured in two columns, with the photodiodes in the first photodiode group having a 90-degree phase difference with the photodiodes in the second photodiode group.

[0042] Specifically, such as Figure 4 As shown, the first photodiode group (A, A') and the second photodiode group (B, B') have a 90-degree phase difference and are arranged in two columns. The first photodiode group (A, A') is arranged in the first column, including the first photodiode A and the second photodiode A', which belong to the first column. The second photodiode group (B, B') is arranged in the second column, including the third photodiode B and the fourth photodiode B', which belong to the second column. The first photodiode A and the third photodiode B have a 90-degree phase difference, and the first photodiode A' and the third photodiode B' have a 90-degree phase difference.

[0043] In this embodiment, the photodiode array configures a first photodiode group (A, A') and a second photodiode group (B, B') with a phase difference of 90 degrees into two columns. The first photodiode group (A, A') is configured in the first column, and the second photodiode group (B, B') is configured in the second column. The width of the first photodiode A and the second photodiode A' in the first photodiode group (A, A') and the third photodiode B and the fourth photodiode B' in the second photodiode group (B, B') in the same direction is less than or equal to the linewidth of one line of the encoding wheel, ensuring that only one photodiode is configured per line of the encoding wheel. Therefore, by configuring the first photodiode group (A, A') and the second photodiode group (B, B') with a phase difference of 90 degrees into two columns, only one photodiode needs to be configured per line of the encoding wheel, reducing the linewidth of the encoding wheel by up to two times. This allows the bipolar process to meet the requirements of high-speed LPI optical encoder receiver chips.

[0044] In one embodiment, the photodiodes in the first photodiode group and the photodiodes in the second photodiode group are both designed using bipolar technology.

[0045] Specifically, the first photodiode A and the second photodiode A' in the first photodiode group (A, A') are designed using a bipolar process, and the third photodiode B and the fourth photodiode B' in the second photodiode group (B, B') are designed using a bipolar process.

[0046] In this embodiment, each photodiode in the photodiode array is designed using bipolar technology and arranged in a two-column array. The photodiodes using bipolar technology can also have a wide range of operating voltage characteristics, which can meet the requirements of high-speed LPI optical encoder receiver chips.

[0047] Based on the same concept, in one embodiment, such as Figure 5 As shown, the present invention provides an optical encoder receiver chip 100, including a photodiode array 10 and an encoding wheel 20, wherein:

[0048] The photodiode array 10 includes: a plurality of photodiode sets, each photodiode set including a first photodiode group and a second photodiode group, the first photodiode group and the second photodiode group having a 90-degree phase difference and being configured in two columns, the photodiodes in the first photodiode group having a 90-degree phase difference with the photodiodes in the second photodiode group;

[0049] The encoding wheel 20 is used to sense the photocurrent of the photodiodes in the first and second photodiode groups of the photodiode array 10 after the input light source is used.

[0050] The optical encoder receiver chip in this embodiment includes a photodiode array and an encoding wheel. The encoding wheel is used to sense the photocurrent of the photodiodes in the first and second photodiode groups of the photodiode array after the input light source. The photodiode array arranges the first and second photodiode groups, which have a phase difference of 90 degrees, into two columns. The first photodiode group is arranged in the first column, and the second photodiode group is arranged in the second column. Because they are arranged in two columns, the width of the photodiodes in the first and second photodiode groups in the same direction (e.g., the x-direction) is less than or equal to the line width of one line of the encoding wheel, allowing one photodiode to be placed in one line of the encoding wheel. Therefore, compared to existing methods that arrange all photodiodes in a single column, requiring two photodiodes in one line of the encoding wheel, this invention arranges the first and second photodiode groups, which have a phase difference of 90 degrees, into two columns, requiring only one photodiode in one line of the encoding wheel. The line width of the encoding wheel can be reduced by up to two times, enabling bipolar technology to meet the requirements of high-speed LPI optical encoder receiver chips, thus solving the problem that existing bipolar technology cannot meet the requirements of high-speed LPI optical encoder receiver chips.

[0051] In one embodiment, the first photodiode group and the second photodiode group have a 90-degree phase difference and are configured in two columns, with the photodiodes in the first photodiode group having a 90-degree phase difference with the photodiodes in the second photodiode group.

[0052] Specifically, such as Figure 5 As shown, the first photodiode group (A, A') and the second photodiode group (B, B') have a 90-degree phase difference and are arranged in two columns. The first photodiode group (A, A') is arranged in the first column, including the first photodiode A and the second photodiode A', which belong to the first column. The second photodiode group (B, B') is arranged in the second column, including the third photodiode B and the fourth photodiode B', which belong to the second column. The first photodiode A and the third photodiode B have a 90-degree phase difference, and the first photodiode A' and the third photodiode B' have a 90-degree phase difference.

[0053] The encoding wheel 20 is used to sense the photocurrent of the photodiodes in the first and second photodiode groups of the photodiode array 10 after the light source is input. Specifically, after the light source is input, the encoding wheel 20 senses the photocurrent of the first photodiode A, the second photodiode A', the third photodiode B, and the fourth photodiode B' in the photodiode array 10.

[0054] In this embodiment, the photodiode array configures a first photodiode group (A, A') and a second photodiode group (B, B') with a phase difference of 90 degrees into two columns. The first photodiode group (A, A') is configured in the first column, and the second photodiode group (B, B') is configured in the second column. The width of the first photodiode A and the second photodiode A' in the first photodiode group (A, A') and the third photodiode B and the fourth photodiode B' in the second photodiode group (B, B') in the same direction is less than or equal to the linewidth of one line of the encoding wheel, ensuring that only one photodiode is configured per line of the encoding wheel. Therefore, by configuring the first photodiode group (A, A') and the second photodiode group (B, B') with a phase difference of 90 degrees into two columns, only one photodiode needs to be configured per line of the encoding wheel, reducing the linewidth of the encoding wheel by up to two times. This allows the bipolar process to meet the requirements of high-speed LPI optical encoder receiver chips.

[0055] In one embodiment, the first photodiode A and the second photodiode A' in the first photodiode group (A, A') are designed using a bipolar process, and the third photodiode B and the fourth photodiode B' in the second photodiode group (B, B') are designed using a bipolar process.

[0056] In this embodiment, each photodiode in the photodiode array is designed using bipolar technology and arranged in a two-column array. The photodiodes using bipolar technology can also have a wide range of operating voltage characteristics, which can meet the requirements of high-speed LPI optical encoder receiver chips.

[0057] Furthermore, the optical encoder receiver chip 100 also includes an amplifier electrically connected to the encoder wheel 20. The amplifier is used to receive and amplify the photocurrent of the photodiodes in the first and second photodiode groups of the photodiode array 10 output by the encoder wheel 20, so as to obtain the photocurrent output values ​​of the first and second photodiode groups with a 90-degree phase difference.

[0058] Specifically, the amplifier is used to receive and amplify the photocurrents of the first photodiode A, the second photodiode A', the third photodiode B, and the fourth photodiode B' output from the encoding wheel 20, to obtain the photocurrent output values ​​of the first photodiode A, the second photodiode A', the third photodiode B, and the fourth photodiode B' with a 90-degree phase difference, as well as the photocurrent output values ​​of the first photodiode group (A, A') and the second photodiode group (B, B') with a 90-degree phase difference.

[0059] Furthermore, the optical encoder receiver chip 100 also includes an amplifier and a processing circuit; the amplifier is electrically connected to the encoder wheel 20 and is used to receive the photocurrent of the photodiodes in the first and second photodiode groups in the photodiode array 10 output by the encoder wheel 20 and perform a first amplification to obtain the first amplified photocurrent; the processing circuit is electrically connected to the amplifier and is used to receive the first amplified photocurrent output by the amplifier and perform a second amplification to obtain the photocurrent output values ​​of the first and second photodiode groups with a 90-degree phase difference.

[0060] Specifically, the amplifier is used to receive the photocurrents of the first photodiode A, the second photodiode A', the third photodiode B, and the fourth photodiode B' output by the encoding wheel 20 and amplify them for the first time to obtain the first amplified photocurrent; the operational circuit is used to receive the first amplified photocurrent output by the amplifier and amplify it for the second time to obtain the photocurrent output values ​​of the first photodiode A, the second photodiode A', the third photodiode B, and the fourth photodiode B' with a 90-degree phase difference, as well as the photocurrent output values ​​of the first photodiode group (A, A') and the second photodiode group (B, B') with a 90-degree phase difference.

[0061] like Figure 6 The diagram shown is a schematic representation of the photocurrent characteristics of an optical encoder receiver chip provided by this invention. Figure 6 As can be seen, after the light source is input through the encoding wheel 20, as the encoding wheel 20 moves, the photocurrent output by each photodiode, such as the first photodiode A, the second photodiode A', the third photodiode B, and the fourth photodiode B', is represented by the time axis. Then, by amplifying the photocurrents of each photodiode through an amplifier or an amplifier and a computing circuit, the photocurrent output values ​​of the first photodiode group (A, A') and the second photodiode group (B, B'), which have a 90-degree phase difference, can be obtained.

[0062] It should be noted that the above-described optical encoder receiver chip embodiment and the above-described photodiode array embodiment belong to the same concept. For details of their implementation process, please refer to the photodiode array embodiment. Furthermore, the technical features in the photodiode array embodiment are all applicable to the above-described optical encoder receiver chip embodiment, and will not be repeated here.

[0063] Based on the same concept, in one embodiment, such as Figure 7 As shown, the present invention provides a light sensor device 500, including the optical encoder receiver chip 100 described in any of the above embodiments.

[0064] In this embodiment, the optical encoder receiver chip 100 is the same as the optical encoder receiver chip 100 described in any of the above embodiments. The specific structure and function can be referred to the optical encoder receiver chip 100 described in any of the above embodiments, and will not be repeated here.

[0065] In this embodiment, a light sensor is provided, including an optical encoder receiver chip. The optical encoder receiver chip includes a photodiode array and an encoding wheel. The encoding wheel is used to sense the photocurrent of the photodiodes in the first and second photodiode groups of the photodiode array after an input light source. The photodiode array arranges the first and second photodiode groups, with a phase difference of 90 degrees, into two columns. The first photodiode group is arranged in the first column, and the second photodiode group is arranged in the second column. Because they are arranged in two columns, the width of the photodiodes in the first and second photodiode groups in the same direction is less than or equal to the line width of one line of the encoding wheel, allowing only one photodiode to be configured in one line of the encoding wheel. Therefore, compared to existing methods that arrange all photodiodes in a single column in the photodiode array, requiring two photodiodes in one line of the encoding wheel, this invention arranges the first and second photodiode groups, with a phase difference of 90 degrees, into two columns, requiring only one photodiode in one line of the encoding wheel. The line width of the encoding wheel can be reduced by up to two times, enabling bipolar technology to meet the requirements of high-speed LPI optical encoder receiver chips and improving the application prospects of light sensors. This solves the problem that existing bipolar processes cannot meet the requirements of high-speed LPI optical encoder receiver chips.

[0066] It should be noted that the above-described optical sensor device embodiment and the above-described optical encoder receiver chip embodiment belong to the same concept. For details of their implementation process, please refer to the optical encoder receiver chip embodiment. Furthermore, the technical features in the optical encoder receiver chip embodiment are all applicable to the above-described optical sensor device embodiment, and will not be repeated here.

[0067] It should be noted that, in this document, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0068] The above embodiments are only used to illustrate the technical solutions of the present invention, and are not intended to limit it. Under the concept of the present invention, the technical features of the above embodiments or different embodiments can also be combined, the steps can be implemented in any order, and there are many other variations of different aspects of the present invention as described above. For the sake of brevity, they are not provided in detail. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. These modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A photodiode array, characterized in that, include: A plurality of photodiode sets, each photodiode set including a first photodiode group and a second photodiode group, the first photodiode group and the second photodiode group having a 90-degree phase difference and being configured in two columns, the photodiodes in the first photodiode group having a 90-degree phase difference with the photodiodes in the second photodiode group.

2. The photodiode array according to claim 1, characterized in that, The photodiodes in the first photodiode group and the photodiodes in the second photodiode group have a width in the same direction that is less than or equal to the line width of one line of the encoding wheel.

3. The photodiode array according to claim 1, characterized in that, Both the photodiodes in the first photodiode group and the photodiodes in the second photodiode group are designed using bipolar technology.

4. An optical encoder receiver chip, characterized in that, It includes a photodiode array and an encoding wheel. The photodiode array includes several photodiode sets. Each photodiode set includes a first photodiode group and a second photodiode group. The first photodiode group and the second photodiode group have a 90-degree phase difference and are configured in two columns. The photodiodes in the first photodiode group and the photodiodes in the second photodiode group have a 90-degree phase difference. The encoding wheel is used to sense the photocurrent of the photodiodes in the first photodiode group and the second photodiode group after the light source is input.

5. The optical encoder receiver chip according to claim 4, characterized in that, The photodiodes in the first photodiode group and the photodiodes in the second photodiode group have a width in the same direction that is less than or equal to the line width of one line of the encoding wheel.

6. The optical encoder receiver chip according to claim 4, characterized in that, Both the photodiodes in the first photodiode group and the photodiodes in the second photodiode group are designed using bipolar technology.

7. The optical encoder receiver chip according to claim 4, characterized in that, The optical encoder receiving chip also includes an amplifier, which is electrically connected to the encoding wheel. The amplifier is used to receive and amplify the photocurrent of the photodiodes in the first and second photodiode groups output by the encoding wheel to obtain the photocurrent output values ​​of the first and second photodiode groups with a 90-degree phase difference.

8. The optical encoder receiver chip according to claim 4, characterized in that, The optical encoder receiving chip also includes an amplifier and a computing circuit; the amplifier is electrically connected to the encoding wheel and is used to receive the photocurrent of the photodiodes in the first photodiode group and the second photodiode group output by the encoding wheel and perform a first amplification to obtain the first amplified photocurrent; The operational circuit is electrically connected to the amplifier and is used to receive the first amplified photocurrent output by the amplifier and perform a second amplification to obtain the photocurrent output values ​​of the first photodiode group and the second photodiode group with a 90-degree phase difference.

9. A light sensor device, characterized in that, Includes the optical encoder receiver chip as described in claim 8.

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