Dimming photovoltaic glass for transparent enclosure structure and preparation method of dimming photovoltaic glass

Abstract

The invention discloses dimming photovoltaic glass for a transparent enclosure structure and a preparation method thereof, and the dimming photovoltaic glass for the transparent enclosure structure comprises a photovoltaic cell part and an electrochromic part which are deposited and stacked on the upper surface and the lower surface of the same glass substrate by functional film layers respectively, the photovoltaic cell part comprises a capacity area and a light-transmitting area which are arranged at an interval, sunlight enters from the photovoltaic cell part, one part of the sunlight is absorbed by the capacity area to generate electric energy, and the other part of the sunlight penetrates through the electrochromic part through the light-transmitting area to enter a room; and electric energy generated by the photovoltaic cell part is connected with an electrode lead of the electrochromic part through a bus bar via an electric control component. The dimming photovoltaic glass for the transparent enclosure structure is simple in structure, products with different light-transmitting areas can be customized according to needs, the total thickness is not larger than 3.5 mm, and the dimming photovoltaic glass is light in weight, convenient to install, firm in structure, stable, durable, convenient to use and maintain, excellent in heat stability and high in adaptability.

Description

TECHNICAL FIELD

[0001] The application belongs to the technical field of thin-film solar cells, and particularly relates to a light-adjustable photovoltaic glass for transparent envelope structures and a preparation method thereof.

[0002] The application belongs to 6.3.2 solar energy production equipment and heat utilization equipment in 6.3 solar energy industry in 6 of strategic new industry catalog, and also belongs to 7.1.7 photovoltaic integrated building outer wall glass in 7.1 high-efficiency energy-saving industry in 7 of strategic new industry catalog. BACKGROUND

[0003] In recent years, the concept of low-carbon life has been deeply rooted in people's minds. People invest a lot of money in the design and concept of indoor and transportation tools in order to pursue a comfortable and easy living and traveling environment, and the green environmental protection concept has become the consensus of people. Using solar energy to realize low-energy consumption living and traveling can make people's life comfortable and economical, which is currently widely recognized by people. The transparent envelope structure applied to building doors and windows, curtain walls, daylighting roofs and transportation tool doors and windows is a kind of building component or part with low energy efficiency, which loses about 60% of the total energy, because the traditional transparent envelope structure is based on the "static" light transmission of glass, which cannot adapt to the time-domain weather change.

[0004] In order to improve the energy efficiency of such transparent envelope structure, many transparent envelope structures that can dynamically adjust the sunlight entering have been formed. Among them, the electrochromic transparent envelope structure technology has become a solution to improve the energy efficiency of buildings and transportation tools because it can actively adjust the incident solar energy, and has been widely applied in buildings and transportation tools. At present, the electrochromic transparent envelope structure applied in the market mainly adjusts the solar transmittance by changing the absorption of solar radiation, and the transmittance is about 2%-70%. The solar energy reflected by the outer surface is wasted, and may cause light pollution. In addition, the electrochromic transparent envelope structure still needs external power supply when it works, and cannot generate power for its work. In the opaque state, only a small part of sunlight is reflected, and most of the sunlight is absorbed. Such electrochromic transparent envelope structure will re-emit 20% to 40% of the absorbed solar heat to the indoor, which will increase the cooling load in hot weather.

[0005] A Chinese invention patent with publication number CN117153922A provides a tunable cadmium telluride power generation energy-saving and its preparation method. The scheme considers that the electrochromic device is similar to the preparation process of cadmium telluride battery, uses laser scribing technology to remove the cadmium telluride battery functional film layer on the cadmium telluride power generation glass, exposes the transparent conductive front electrode surface, then repeatedly uses a mask plate and laser scribing technology, and then deposits an electrochromic layer, an electrolyte layer, an ion storage layer, and a transparent conductive electrode layer on the exposed transparent conductive front electrode surface in sequence to prepare a periodic cadmium telluride sub-cell and electrochromic device series structure. The electrochromic device and the cadmium telluride sub-cell are connected in series, the cadmium telluride sub-cell generates power, and the electrochromic device is powered. The scheme also solves the problems of light regulation, uniform color change of the electrochromic device, and compatibility with the cadmium telluride battery stacking process. However, in actual engineering practice, the scheme still has the following problems: (1) The visible light transmittance of the electrochromic device is proportional to the series voltage of the cadmium telluride sub-cell. When the series voltage of the cadmium telluride sub-cell is low, the visible light transmittance of the electrochromic device is low, especially in rainy weather and weak sunlight in the northern hemisphere in winter, which seriously affects indoor lighting. The need to turn on the light for illumination increases energy consumption, and full-time, full-season, and full-regional dynamic indoor dimming and thermal regulation cannot be achieved; (2) The mask plate and laser scribing are repeatedly used in the stacking process of the electrochromic device and the cadmium telluride battery, which is complex and harsh. The equipment control precision and complexity are high, the production cost is high, the maintenance cost is high, and it is not conducive to industrialization; (3) The cadmium telluride sub-cell and the electrochromic sub-device are connected in series, and the failure probability of the electrochromic sub-device is large. When the electrochromic sub-device is damaged, the life cycle of the entire dimming power generation glass is shortened. SUMMARY

[0006] To solve the problems of the existing technology that the tunable light photovoltaic glass cannot achieve full-time, full-season, and full-regional dynamic indoor dimming and thermal regulation, the production cost and maintenance cost are high, and the life cycle is short, the present application discloses a dimming photovoltaic glass for transparent enclosure and a preparation method thereof. The structure is simple, the preparation process is simple, the quality is light and convenient, the structure is firm, stable, durable, and easy to use and maintain, has excellent thermal stability and adaptability.

[0007] The purpose of the present application is achieved in the following manner: a dimming photovoltaic glass for transparent enclosure, comprising a photovoltaic cell part and an electrochromic part, the functional film layers of the photovoltaic cell part and the electrochromic part are respectively deposited and stacked on the upper and lower surfaces of the same glass substrate, the photovoltaic cell part comprises energy generating areas and light transmitting areas arranged at intervals, sunlight is incident from the photovoltaic cell part, a part of the sunlight is absorbed by the energy generating areas to generate electric energy, another part of the sunlight penetrates the electrochromic part through the light transmitting areas and enters the indoor, the electric energy generated by the photovoltaic cell part is connected with the electrode lead of the electrochromic part through the bus bar and the electric control component.

[0008] The energy production area of the photovoltaic cell part comprises, from bottom to top, a first transparent shielding layer, a transparent conductive back electrode layer, a back electrode buffer layer, a light absorption layer, a front electrode buffer layer and a transparent conductive front electrode layer deposited on a glass substrate, and bus bars are respectively bonded on the transparent conductive back electrode layer and the transparent conductive front electrode layer. The energy production area of the photovoltaic cell part further comprises at least one set of parallelly arranged first, second and third scribe lines, the first scribe line penetrates the transparent conductive back electrode layer and the back electrode buffer layer, and the first scribe line is filled with light absorption layer material, the second scribe line penetrates the transparent conductive back electrode layer, the back electrode buffer layer, the light absorption layer and the front electrode buffer layer, and the second scribe line is filled with transparent conductive front electrode layer material, and the third scribe line penetrates the back electrode buffer layer, the light absorption layer, the front electrode buffer layer and the transparent conductive front electrode layer.

[0009] The plating material of the first transparent shielding layer is porous silicon dioxide, the plating material of the transparent conductive back electrode layer and the transparent conductive front electrode layer is any one of fluorine-doped tin oxide, aluminum-doped zinc oxide and indium-doped tin oxide, the back electrode buffer layer is any one of molybdenum oxide, vanadium oxide, nickel oxide, tungsten oxide, nitrogen-doped tungsten oxide, titanium-doped tungsten oxide and molybdenum-doped tungsten oxide, or two or more materials are periodically plated, the light absorption layer is periodically plated with cadmium tellurium selenide and cadmium telluride, and the front electrode buffer layer is one of tin oxide, zinc oxide, magnesium-doped zinc oxide, cadmium sulfide, cadmium stannate and cadmium selenate, or two or more materials are periodically plated.

[0010] The plating thickness of the first transparent shielding layer is 50-100 nanometers, the plating thickness of the transparent conductive back electrode layer is 300-700 nanometers, the plating thickness of the back electrode buffer layer is 80-300 nanometers, the plating thickness of the light absorption layer is 1-6 micrometers, the plating thickness of the front electrode buffer layer is 50-100 nanometers, and the plating thickness of the transparent conductive front electrode layer is 300-700 nanometers.

[0011] The light transmission area is obtained by using laser or mechanical scribing technology to remove the transparent conductive back electrode layer, the back electrode buffer layer, the light absorption layer, the front electrode buffer layer and the transparent conductive front electrode layer.

[0012] The electrochromic part comprises, from top to bottom, a second transparent shielding layer, a first transparent conductive electrode layer, an ion storage layer, an electrolyte layer, an electrochromic layer and a second transparent conductive electrode layer deposited on a glass substrate, and electrode leads are respectively bonded on the first transparent conductive electrode layer and the second transparent conductive electrode layer.

[0013] The coating material of the second transparent shielding layer is porous silicon dioxide, the coating material of the first transparent conductive electrode layer and the second transparent conductive electrode layer is any one of fluorine-doped tin oxide, aluminum-doped zinc oxide and indium-doped tin oxide, the ion storage layer is any one of molybdenum oxide, vanadium oxide, nickel oxide, tungsten oxide, nitrogen-doped tungsten oxide, titanium-doped tungsten oxide and molybdenum-doped tungsten oxide, or is formed by periodic coating of two or more materials, the electrolyte layer is one of lithium tantalate, aluminum-doped lithium tantalate and lithium titanate, or is formed by periodic coating of two or more materials, and the electrochromic layer is one of tungsten, silver, molybdenum oxide, vanadium oxide, cobalt oxide, tungsten oxide, nitrogen-doped tungsten oxide, titanium-doped tungsten oxide and molybdenum-doped tungsten oxide, or is formed by periodic coating of two or more materials.

[0014] The coating thickness of the second transparent shielding layer is 50-100 nanometers, the coating thickness of the first transparent conductive electrode layer is 300-700 nanometers, the coating thickness of the ion storage layer is 80-300 nanometers, the coating thickness of the electrolyte layer is 150-350 nanometers, the coating thickness of the electrochromic layer is 150-350 nanometers, and the coating thickness of the second transparent conductive electrode layer is 300-700 nanometers.

[0015] The glass substrate is super white glass, the bus bar is a bus bar for photovoltaic use, and the electrode lead is a copper foil tape for electrochromic use.

[0016] The preparation method of the light-adjustable photovoltaic glass for a transparent envelope structure includes the following steps: 1) synchronously coating a first transparent shielding layer and a second transparent shielding layer on both sides of a clean glass substrate, and the coating thickness is 50-100 nanometers; 2) synchronously coating a transparent conductive back electrode layer and a first transparent conductive electrode layer on the first transparent shielding layer and the second transparent shielding layer, respectively, and the coating thickness is 300-700 nanometers; 3) synchronously coating a back electrode buffer layer and an electrochromic layer on the transparent conductive back electrode layer and the first transparent conductive electrode layer, respectively, and the coating thickness is 80-300 nanometers; 3) using laser or mechanical scribing technology to scribe the back electrode buffer layer, and the transparent conductive back electrode layer is scribed, and the width of the first scribe line is 30-80 micrometers; 4) coating a light-absorbing layer on the back electrode buffer layer, and the coating thickness is 1-6 micrometers, and the first scribe line is covered by the light-absorbing layer and filled with the light-absorbing layer material; 5) coating a front electrode buffer layer on the light-absorbing layer, and the coating thickness is 50-100 nanometers; 6) using laser or mechanical scribing technology to scribe the front electrode buffer layer, and the light-absorbing layer and the back electrode buffer layer are scribed, and the second scribe line does not coincide with the first scribe line, and the width of the second scribe line is 30-50 micrometers; 7) coating electrolyte layer on electrochromic layer, coating thickness is 150-350 nanometers; 8) coating ion storage layer on electrolyte layer, coating thickness is 150-350 nanometers; 9) synchronously coating transparent conductive front electrode layer and second transparent conductive electrode layer on front electrode buffer layer and ion storage layer respectively, coating thickness is 300-700 nanometers, transparent conductive front electrode layer covers second scribe line 032 and completely contacts with transparent conductive back electrode layer; 10) using laser or mechanical scribe technology to scribe on transparent conductive front electrode layer, scribe through front electrode buffer layer, light absorbing layer and back electrode buffer layer, and third scribe line does not coincide with first scribe line and second scribe line, third scribe line width is 20-30 microns; 11) according to light transmission area pattern requirement, using laser or mechanical scribe technology to scribe and clean photovoltaic cell part 010, scribe and clean through transparent conductive front electrode layer, front electrode buffer layer, light absorbing layer, back electrode buffer layer and transparent conductive back electrode layer, clean out light transmission area, and the rest is energy production area; 12) respectively bonding bus bar on transparent conductive back electrode layer and transparent conductive front electrode layer, respectively bonding electrode lead on first transparent conductive electrode layer and second transparent conductive electrode layer, forming a kind of light-adjustable photovoltaic glass for transparent enclosure.

[0017] Compared with the prior art, the light-adjustable photovoltaic glass for transparent enclosure provided by the application can realize energy production, indoor light adjustment and full-season dynamic heat regulation for transparent enclosure, effectively adjust the transmission and reflection energy of sunlight while producing energy, and improve the energy efficiency of buildings and vehicles. The light-adjustable photovoltaic glass has simple structure, simplified process and easy preparation, and the total thickness is not greater than 3.5 mm. The packaging can be customized according to customer requirements. The light-adjustable photovoltaic glass is light in quality, easy to install and maintain, solid in structure, stable and durable in use, easy to use and maintain, has excellent thermal stability, strong adaptability, and is suitable for buildings and vehicles. The device meets the national green low-carbon development concept, and is a new attempt to realize low-carbon energy saving in buildings and vehicles. BRIEF DESCRIPTION OF DRAWINGS

[0018] Figure 1 is a sectional view of the application.

[0019] Figure 2 is a structure schematic view of the photovoltaic cell part of the application.

[0020] Figure 3 is a structure schematic view of the photovoltaic cell part of the application. DETAILED DESCRIPTION

[0021] The present invention will be further described below with reference to the accompanying drawings and specific embodiments. It should be understood that these embodiments are for illustrative purposes only and are not intended to limit the scope of the invention. After reading the contents of this invention, those skilled in the art can make various alterations or modifications to the invention, and these equivalent forms also fall within the scope defined by this invention.

[0022] like Figures 1-3 As shown, a dimming photovoltaic glass for transparent enclosure structures includes a photovoltaic cell portion 010 and an electrochromic portion 020. The functional film layers of the photovoltaic cell portion 010 and the electrochromic portion 020 are respectively deposited and stacked on the upper and lower surfaces of the same glass substrate 001. The photovoltaic cell portion 010 includes a power generation area 040 and a light transmission area 041 arranged at intervals. Sunlight is incident on the photovoltaic cell portion 010. Part of the sunlight is absorbed by the power generation area 040 to generate electrical energy, and part of the sunlight passes through the light transmission area 041 and penetrates the electrochromic portion 020 to enter the room. The electrical energy generated by the photovoltaic cell portion 010 is connected to the electrode lead 061 of the electrochromic portion through a busbar 051 and an electronic control component. Figure 1 The middle arrow indicates the direction of current flow when the photovoltaic cell is working.

[0023] The photovoltaic cell section 010 is a cadmium telluride-based thin-film solar cell, and the busbar 017 is the power output terminal; the electrochromic section 020 is a device for dynamically adjusting indoor lighting, and the electrode lead 039 is the power input terminal. The photovoltaic cell section 010 and the electrochromic section 020 are electrically insulated from each other by a glass substrate 001.

[0024] Furthermore, the production capacity area 040 of the photovoltaic cell section 010 includes, from bottom to top, a first transparent shielding layer 012, a transparent conductive back electrode layer 013, a back electrode buffer layer 014, a light absorption layer 015, a front electrode buffer layer 016, and a transparent conductive front electrode layer 017 deposited on the glass substrate 001. Busbars 051 are respectively bonded to the transparent conductive back electrode layer 013 and the transparent conductive front electrode layer 017. The production capacity area 040 of the photovoltaic cell section 010 also includes at least one set of parallel first scribe lines 031 and second scribe lines 051. 32. The third slash 033, the first slash 031 cuts through the transparent conductive back electrode layer 013 and the back electrode buffer layer 014, and the first slash 031 is filled with light absorption layer material, the second slash 032 cuts through the transparent conductive back electrode layer 013, the back electrode buffer layer 014, the light absorption layer 015, and the front electrode buffer layer 016, and the second slash 032 is filled with transparent conductive front electrode layer material, the third slash 033 cuts through the back electrode buffer layer 014, the light absorption layer 015, the front electrode buffer layer 016 and the transparent conductive front electrode layer 017.

[0025] The coating material of the first transparent shielding layer 012 is preferably porous silicon dioxide, the coating material of the transparent conductive back electrode layer 013, the transparent conductive front electrode layer 017 is preferably any one of fluorine-doped tin oxide, aluminum-doped zinc oxide and indium-doped tin oxide, the back electrode buffer layer 014 is preferably any one of molybdenum oxide, vanadium oxide, nickel oxide, tungsten oxide, nitrogen-doped tungsten oxide, titanium-doped tungsten oxide, molybdenum-doped tungsten oxide, or two or more materials are periodically coated, the light absorption layer 015 is preferably periodically coated with cadmium tellurium selenide and cadmium telluride, and the front electrode buffer layer 016 is preferably one of tin oxide, zinc oxide, magnesium-doped zinc oxide, cadmium sulfide, cadmium stannate, cadmium selenate, or two or more materials are periodically coated.

[0026] Further, the coating thickness of the first transparent shielding layer 012 is 50-100 nanometers, the coating thickness of the transparent conductive back electrode layer 013 is 300-700 nanometers, the coating thickness of the back electrode buffer layer 014 is 80-300 nanometers, the coating thickness of the light absorption layer 015 is 1-6 microns, the coating thickness of the front electrode buffer layer 016 is 50-100 nanometers, and the coating thickness of the transparent conductive front electrode layer 017 is 300-700 nanometers.

[0027] Further, the light transmission area 041 is obtained by using laser or mechanical scribing technology to remove the transparent conductive back electrode layer 013, the back electrode buffer layer 014, the light absorption layer 015, the front electrode buffer layer 016 and the transparent conductive front electrode layer 017. Compared with other photovoltaic components, the cadmium telluride-based photovoltaic cell device structure has a unique advantage that the front electrode of a large-area component is a metal conductive layer, and the use of laser or mechanical scribing technology to remove each functional layer obtains the light transmission area 041, and by adjusting the area ratio of the light transmission area 041 to the area of the functional layer not removed (i.e. the power generation area 040), different light transmission ratios are obtained to realize the function of both power generation and light transmission.

[0028] The electrochromic part 020 includes a second transparent shielding layer 021, a first transparent conductive electrode layer 022, an ion storage layer 023, an electrolyte layer 024, an electrochromic layer 025, a second transparent conductive electrode layer 026 deposited on the glass substrate 001 from top to bottom, and the electrode lead 061 is bonded to the first transparent conductive electrode layer 022 and the second transparent conductive electrode layer 026, respectively.

[0029] The coating material of the second transparent shielding layer 021 is preferably porous silicon dioxide, the coating material of the first transparent conductive electrode layer 022 and the second transparent conductive electrode layer 026 is preferably any one of fluorine-doped tin oxide, aluminum-doped zinc oxide, and indium-doped tin oxide, the ion storage layer 023 is preferably any one of molybdenum oxide, vanadium oxide, nickel oxide, tungsten oxide, nitrogen-doped tungsten oxide, titanium-doped tungsten oxide, and molybdenum-doped tungsten oxide, or is periodically coated with two or more materials, the electrolyte layer 024 is preferably one of lithium tantalate, aluminum-doped lithium tantalate, and lithium titanate, or is periodically coated with two or more materials, and the electrochromic layer 025 is preferably one of tungsten, silver, molybdenum oxide, vanadium oxide, cobalt oxide, tungsten oxide, nitrogen-doped tungsten oxide, titanium-doped tungsten oxide, and molybdenum-doped tungsten oxide, or is periodically coated with two or more materials.

[0030] Further, the coating thickness of the second transparent shielding layer 021 is 50-100 nanometers, the coating thickness of the first transparent conductive electrode layer 022 is 300-700 nanometers, the coating thickness of the ion storage layer 023 is 80-300 nanometers, the coating thickness of the electrolyte layer 024 is 150-350 nanometers, the coating thickness of the electrochromic layer 025 is 150-350 nanometers, and the coating thickness of the second transparent conductive electrode layer 026 is 300-700 nanometers.

[0031] The glass substrate 001 is preferably super white glass. Super white glass is the most widely used solar photovoltaic glass today, which is a kind of super transparent low-iron glass, also known as low-iron glass and high-transparency glass. It is a new type of high-grade glass with high quality and multiple functions, with a light transmittance of more than 91.5%. Super white glass has all the processability of high-quality float glass and has superior physical, mechanical and optical properties, and can be processed like other high-quality float glass.

[0032] The bus bar 051 is a photovoltaic bus bar, and the electrode lead 061 is a copper foil tape for electrochromic use, and the thickness of the copper foil tape is preferably 0.01-0.2 mm.

[0033] A preparation method of a dimming photovoltaic glass for a transparent envelope, comprising the following steps: 1) synchronously coating the first transparent shielding layer 012 and the second transparent shielding layer 021 on both sides of a clean glass substrate 001, and the coating thickness is 50-100 nanometers; 2) synchronously coating the transparent conductive back electrode layer 013 and the first transparent conductive electrode layer 022 on the first transparent shielding layer 012 and the second transparent shielding layer 021, respectively, and the coating thickness is 300-700 nanometers; 3) synchronously coating the back electrode buffer layer 014 and the electrochromic layer 023 on the transparent conductive back electrode layer 013 and the first transparent conductive electrode layer 022, respectively, and the coating thickness is 80-300 nanometers; 3) Draw lines on the back electrode buffer layer 014 using laser or mechanical scribing technology, scribe through the transparent conductive back electrode layer 013, the width of the first scribe line 031 is 30-80 microns; 4) Coating the light absorption layer 015 on the back electrode buffer layer 014, the coating thickness is 1-6 microns, the first scribe line 031 is covered by the light absorption layer 015 and filled with light absorption layer 015 material; 5) Coating the front electrode buffer layer 016 on the light absorption layer 015, the coating thickness is 50-100 nanometers; 6) Draw lines on the front electrode buffer layer 016 using laser or mechanical scribing technology, scribe through the light absorption layer 015 and the back electrode buffer layer 014, and the second scribe line 032 does not coincide with the first scribe line 031, the width of the second scribe line 032 is 30-50 microns; 7) Coating the electrolyte layer 024 on the electrochromic layer 023, the coating thickness is 150-350 nanometers; 8) Coating the ion storage layer 025 on the electrolyte layer 024, the coating thickness is 150-350 nanometers; 9) Simultaneously coating the transparent conductive front electrode layer 017 and the second transparent conductive electrode layer 026 on the front electrode buffer layer 016 and the ion storage layer 025 respectively, the coating thickness is 300-700 nanometers, the transparent conductive front electrode layer 017 covers the second scribe line 032 and is in complete contact with the transparent conductive back electrode layer 013; 10) Draw lines on the transparent conductive front electrode layer 017 using laser or mechanical scribing technology, scribe through the front electrode buffer layer 016, the light absorption layer 015 and the back electrode buffer layer 014, and the third scribe line 033 does not coincide with the first scribe line 031 and the second scribe line 032, the width of the third scribe line is 20-30 microns; 11) According to the light transmission area pattern requirement, use laser or mechanical scribing technology to scribe and clean the photovoltaic cell part 010, scribe and clean through the transparent conductive front electrode layer 017, the front electrode buffer layer 016, the light absorption layer 015, the back electrode buffer layer 014 and the transparent conductive back electrode layer 013, clean out the light transmission area 041, and the rest is the power generation area 040; 12) Bond the bus bar 051 on the transparent conductive back electrode layer 013 and the transparent conductive front electrode layer 017 respectively, bond the electrode lead 061 on the first transparent conductive electrode layer 022 and the second transparent conductive electrode layer 026 respectively, to form a light-adjustable photovoltaic glass for transparent enclosure.

[0034] The application synchronously deposits functional film layers of photovoltaic cell part and electrochromic part on the upper and lower surfaces of the glass substrate respectively, and has high production efficiency; the first, second and third scribe lines are formed by laser or mechanical scribing technology, and the transparent conductive front electrode layer, front electrode buffer layer, light absorbing layer, back electrode buffer layer and transparent conductive back electrode layer are removed to form the photovoltaic cell part production area and the light transmission area, so that the preparation process is simple, easy to operate and low in production cost; the photovoltaic cell part and the electrochromic part are respectively located on the upper and lower surfaces of the glass substrate, compared with the series connection form of the cadmium telluride sub-cell and the electrochromic sub-device disclosed in CN117153922A, the maintenance cost is low, the light modulation and power generation glass has a long service life, and the industrialization is beneficial.

[0035] The prepared light modulation photovoltaic glass for transparent enclosure can realize energy production, indoor light modulation and full-season dynamic heat regulation for transparent enclosure, effectively adjusts the transmission and reflection energy of sunlight while producing energy, and improves the energy efficiency of buildings and vehicles. The light modulation photovoltaic glass has a simple structure, a total thickness of not more than 3.5 mm, light weight, easy installation, solid and stable structure, long service life, easy use and maintenance, excellent thermal stability, strong adaptability, and is suitable for buildings and vehicles. The light modulation photovoltaic glass conforms to the renewable green low-carbon development concept advocated by the country, is a new attempt to realize low-carbon energy saving in buildings and vehicles, and has excellent thermal stability and strong adaptability.

[0036] The above only describes the preferred embodiments of the application, and it should be noted that those skilled in the art can make several changes and improvements without departing from the overall concept of the application, and these should also be considered as the protection scope of the application.

Claims

1. A switchable photovoltaic glazing for a transparent enclosure comprising a photovoltaic cell portion (010) and an electrochromic portion (020), characterized in that: The functional film layers of the photovoltaic cell part (010) and the electrochromic part (020) are deposited on the upper and lower surfaces of the same glass substrate (001) respectively, the photovoltaic cell part (010) comprises energy generating areas (040) and light transmitting areas (041) arranged at intervals, sunlight is incident on the photovoltaic cell part (010), a part of the sunlight is absorbed by the energy generating areas (040) to generate electric energy, and another part of the sunlight penetrates the electrochromic part (020) through the light transmitting areas (041) to enter the room, the electric energy generated by the photovoltaic cell part (010) is connected to the electrode lead (061) of the electrochromic part through the bus bar (051) and the electric control component.

2. The switchable photovoltaic glazing for transparent enclosures of claim 1, wherein: The energy generating areas (040) of the photovoltaic cell part (010) comprise a first transparent shielding layer (012), a transparent conductive back electrode layer (013), a back electrode buffer layer (014), a light absorbing layer (015), a front electrode buffer layer (016) and a transparent conductive front electrode layer (017) deposited on the glass substrate (001) from bottom to top, the transparent conductive back electrode layer (013) and the transparent conductive front electrode layer (017) are respectively bonded with the bus bar (051), and the energy generating areas (040) of the photovoltaic cell part (010) further comprise at least one group of first, second and third scribe lines (031, 032, 033) arranged in parallel, the first scribe line (031) penetrates the transparent conductive back electrode layer (013) and the back electrode buffer layer (014), and the first scribe line (031) is filled with light absorbing layer material, the second scribe line (032) penetrates the transparent conductive back electrode layer (013), the back electrode buffer layer (014), the light absorbing layer (015) and the front electrode buffer layer (016), and the second scribe line (032) is filled with transparent conductive front electrode layer material, and the third scribe line (033) penetrates the back electrode buffer layer (014), the light absorbing layer (015), the front electrode buffer layer (016) and the transparent conductive front electrode layer (017).

3. The switchable photovoltaic glazing for transparent enclosures of claim 2, wherein: The coating material of the first transparent shielding layer (012) is porous silicon dioxide, the coating material of the transparent conductive back electrode layer (013) and the transparent conductive front electrode layer (017) is any one of fluorine-doped tin oxide, aluminum-doped zinc oxide and indium-doped tin oxide, the back electrode buffer layer (014) is any one of molybdenum oxide, vanadium oxide, nickel oxide, tungsten oxide, nitrogen-doped tungsten oxide, titanium-doped tungsten oxide and molybdenum-doped tungsten oxide, or two or more materials are periodically coated, the light absorbing layer (015) is periodically coated with cadmium tellurium selenide and cadmium telluride, and the front electrode buffer layer (016) is one of tin oxide, zinc oxide, magnesium-doped zinc oxide, cadmium sulfide, cadmium stannate and cadmium selenate, or two or more materials are periodically coated.

4. The switchable photovoltaic glazing for transparent enclosures of claim 2, wherein: The coating thickness of the first transparent shielding layer (012) is 50-100 nanometers, the coating thickness of the transparent conductive back electrode layer (013) is 300-700 nanometers, the coating thickness of the back electrode buffer layer (014) is 80-300 nanometers, the coating thickness of the light absorption layer (015) is 1-6 micrometers, the coating thickness of the front electrode buffer layer (016) is 50-100 nanometers, and the coating thickness of the transparent conductive front electrode layer (017) is 300-700 nanometers.

5. The switchable photovoltaic glazing for transparent enclosures of claim 1, wherein: The light transmission area (041) is obtained by removing the transparent conductive back electrode layer (013), the back electrode buffer layer (014), the light absorption layer (015), the front electrode buffer layer (016) and the transparent conductive front electrode layer (017) by using laser or mechanical scribing technology.

6. The switchable photovoltaic glazing for transparent enclosures of claim 1, wherein: The electrochromic part (020) comprises a second transparent shielding layer (021), a first transparent conductive electrode layer (022), an ion storage layer (023), an electrolyte layer (024), an electrochromic layer (025), and a second transparent conductive electrode layer (026) deposited on the glass substrate (001) from top to bottom, and the first transparent conductive electrode layer (022) and the second transparent conductive electrode layer (026) are respectively bonded with electrode leads (061).

7. The switchable photovoltaic glazing for transparent enclosures of claim 6, wherein: The coating material of the second transparent shielding layer (021) is porous silicon dioxide, the coating material of the first transparent conductive electrode layer (022) and the second transparent conductive electrode layer (026) is any one of fluorine-doped tin oxide, aluminum-doped zinc oxide, and indium-doped tin oxide, the ion storage layer (023) is any one of molybdenum oxide, vanadium oxide, nickel oxide, tungsten oxide, nitrogen-doped tungsten oxide, titanium-doped tungsten oxide, and molybdenum-doped tungsten oxide, or two or more materials are periodically coated, the electrolyte layer (024) is one of lithium tantalate, aluminum-doped lithium tantalate, and lithium titanate, or two or more materials are periodically coated, and the electrochromic layer (025) is one of tungsten, silver, molybdenum oxide, vanadium oxide, cobalt oxide, tungsten oxide, nitrogen-doped tungsten oxide, titanium-doped tungsten oxide, and molybdenum-doped tungsten oxide, or two or more materials are periodically coated.

8. The switchable photovoltaic glazing for transparent enclosures of claim 6, wherein: The coating thickness of the second transparent shielding layer (021) is 50-100 nanometers, the coating thickness of the first transparent conductive electrode layer (022) is 300-700 nanometers, the coating thickness of the ion storage layer (023) is 80-300 nanometers, the coating thickness of the electrolyte layer (024) is 150-350 nanometers, the coating thickness of the electrochromic layer (025) is 150-350 nanometers, and the coating thickness of the second transparent conductive electrode layer (026) is 300-700 nanometers.

9. The switchable photovoltaic glazing for transparent enclosures of claim 2 or 6, wherein: The glass substrate (001) is super white glass; the bus bar (051) is a bus bar for photovoltaic use; and the electrode lead (061) is a copper foil tape for electrochromic use.

10. The method of claim 1-9 for the production of switchable photovoltaic glazing for transparent enclosures, characterized in that: The method comprises the following steps, 1) synchronously coating the first transparent shielding layer (012) and the second transparent shielding layer (021) on both sides of a clean glass substrate (001), and the coating thickness is 50-100 nanometers; 2) Synchronously coating transparent conductive back electrode layer (013) and first transparent conductive electrode layer (022) on first transparent shielding layer (012) and second transparent shielding layer (021) respectively, coating thickness is 300-700 nanometers; 3) Synchronously coating back electrode buffer layer (014) and electrochromic layer (023) on transparent conductive back electrode layer (013) and first transparent conductive electrode layer (022) respectively, coating thickness is 80-300 nanometers; 3) Using laser or mechanical scribing technology to scribe on back electrode buffer layer (014), scribing through transparent conductive back electrode layer (013), the width of first scribe line (031) is 30-80 microns; 4) Coating light absorbing layer (015) on back electrode buffer layer (014), coating thickness is 1-6 microns, first scribe line (031) is covered by light absorbing layer (015) and filled with light absorbing layer (015) material; 5) Coating front electrode buffer layer (016) on light absorbing layer (015), coating thickness is 50-100 nanometers; 6) Using laser or mechanical scribing technology to scribe on front electrode buffer layer (016), scribing through light absorbing layer (015) and back electrode buffer layer (014), and second scribe line (032) does not coincide with first scribe line (031), the width of second scribe line (032) is 30-50 microns; 7) Coating electrolyte layer (024) on electrochromic layer (023), coating thickness is 150-350 nanometers; 8) Coating ion storage layer (025) on electrolyte layer (024), coating thickness is 150-350 nanometers; 9) Synchronously coating transparent conductive front electrode layer (017) and second transparent conductive electrode layer (026) on front electrode buffer layer (016) and ion storage layer (025) respectively, coating thickness is 300-700 nanometers, transparent conductive front electrode layer (017) covers second scribe line 032 and completely contacts with transparent conductive back electrode layer (013); 10) Using laser or mechanical scribing technology to scribe on transparent conductive front electrode layer (017), scribing through front electrode buffer layer (016), light absorbing layer (015) and back electrode buffer layer (014), and third scribe line (033) does not coincide with first scribe line (031) and second scribe line (032), the width of third scribe line is 20-30 microns; 11) According to the light transmission area pattern requirement, using laser or mechanical scribing technology to scribe and clean photovoltaic cell part 010, scribing and cleaning through transparent conductive front electrode layer (017), front electrode buffer layer (016), light absorbing layer (015), back electrode buffer layer (014) and transparent conductive back electrode layer (013), cleaning out light transmission area (041), the rest is energy production area (040); 12) Bonding bus bar (051) on transparent conductive back electrode layer (013) and transparent conductive front electrode layer (017) respectively, bonding electrode lead (061) on first transparent conductive electrode layer (022) and second transparent conductive electrode layer (026) respectively, forming a kind of light adjusting photovoltaic glass for transparent enclosure.

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