Superconducting diode and preparation method thereof

Abstract

The invention provides a superconducting diode and a preparation method thereof. The preparation method comprises the following steps: modulating the high-temperature superconducting Josephson junction device: connecting the first electrode to a power supply, connecting the second electrode and the third electrode to a voltage measuring device, and grounding the fourth electrode; reducing the environment temperature of the high-temperature superconductive Josephson junction device to a preset temperature lower than the superconductive transition temperature; direct current pulse current with a preset pulse signal is applied to the first electrode, so that a volt-ampere characteristic curve of the high-temperature superconducting Josephson junction device has a rectification characteristic; and applying an alternating current with a predetermined microwave signal to the first electrode, so that a voltage step appears on one side of the volt-ampere characteristic curve, and the other side of the volt-ampere characteristic curve is in a superfluid state. The superconducting diode is obtained by carrying out direct current modulation and alternating current modulation on the high-temperature superconducting Josephson junction device, and high rectification efficiency and high working temperature can be achieved.

Description

Technical Field

[0001] This application relates to the field of diodes, and more specifically, to a superconducting diode and a method for fabricating the same. Background Technology

[0002] Traditional diodes are two-terminal devices made of semiconductor materials with unidirectional conductivity. Their unique rectification behavior makes them a core component of modern electronic devices, widely used in energy conversion, communications, and other fields. Superconducting diodes are a relatively new type of superconducting electronic device, a product of the combination of superconducting material development and electronic device technology. These diodes are made of superconducting materials and have dissipation-free conduction current, overcoming the energy consumption problem of traditional diodes and achieving a more efficient and lower-energy-consumption technological innovation.

[0003] Currently, superconducting diodes are mainly realized through two approaches: one is by constructing superconducting thin films of specific shapes to achieve unidirectional superconducting current; the other is by constructing superconducting Josephson junction devices. The superconducting materials used are primarily: traditional low-temperature superconducting materials (operating temperatures mainly within a certain range). 3 He or 4 He (refrigeration range) or high-temperature superconducting materials (operating temperatures above liquid nitrogen). Research on superconducting diodes based on low-temperature superconducting materials is extensive, but they are costly and complex to operate. Currently, research on high-temperature superconducting materials is relatively lacking.

[0004] The content of the background section is merely the technology known to the inventor and does not necessarily represent the prior art in this field. Summary of the Invention

[0005] To address at least one of the problems in the prior art, a first aspect of this application provides a method for fabricating a superconducting diode, the superconducting diode comprising a high-temperature superconducting Josephson junction device, the high-temperature superconducting Josephson junction device comprising an electrode and a dissociated single-crystal thin film attached to the electrode;

[0006] The electrodes include a first electrode, a second electrode, a third electrode, and a fourth electrode arranged in sequence. The dissociated single-crystal thin film includes a first dissociated single-crystal thin film and a second dissociated single-crystal thin film partially bonded to the first dissociated single-crystal thin film. The first dissociated single-crystal thin film and the second dissociated single-crystal thin film are obtained by dissociating the same single-crystal thin film. The first dissociated single-crystal thin film is bonded to the first electrode and the second electrode, and the second dissociated single-crystal thin film is bonded to the third electrode and the fourth electrode.

[0007] The method includes:

[0008] Modulation of the high-temperature superconducting Josephson junction device includes:

[0009] Connect the first electrode to a power source, connect the second and third electrodes to a voltage measuring device, and ground the fourth electrode;

[0010] The ambient temperature of the high-temperature superconducting Josephson junction device is cooled to a predetermined temperature below the superconducting transition temperature;

[0011] A DC pulse current with a predetermined pulse signal is applied to the first electrode, causing the current-voltage characteristic curve of the high-temperature superconducting Josephson junction device to exhibit rectifying characteristics; and

[0012] An alternating current with a predetermined microwave signal is applied to the first electrode, causing a voltage step to appear on one side of the current-voltage characteristic curve and a superfluid state (zero voltage state) to appear on the other side.

[0013] In some embodiments of this application, when a voltage step appears on one side of the current-voltage characteristic curve, the critical current on that side of the current-voltage characteristic curve is zero by adjusting the AC current power.

[0014] In some embodiments of this application, the method further includes:

[0015] The high-temperature superconducting Josephson junction device was fabricated.

[0016] In some embodiments of this application, fabricating the high-temperature superconducting Josephson junction device includes:

[0017] Single-crystal thin films are prepared on a first substrate;

[0018] The electrode is fabricated on the second substrate;

[0019] The single-crystal thin film is dissociated to obtain a dissociated single-crystal thin film;

[0020] The first electrode and the second electrode are bonded to the dissociated single crystal thin film on the second substrate;

[0021] The dissociated single-crystal thin film is further dissociated to obtain a first dissociated single-crystal thin film and a second dissociated single-crystal thin film, wherein the first dissociated single-crystal thin film is bonded to the first electrode and the second electrode, and the second dissociated single-crystal thin film is separated from the first dissociated single-crystal thin film; and

[0022] The second dissociated single crystal film is bonded to the first dissociated single crystal film, the third electrode, and the fourth electrode on the second substrate to obtain the high-temperature superconducting Josephson junction device.

[0023] In some embodiments of this application, the fabrication of the high-temperature superconducting Josephson junction device further includes:

[0024] The protective layer is attached to the overlapping area of ​​the first and second dissociated single crystal films.

[0025] In some embodiments of this application, the protective layer is a boron nitride thin film.

[0026] In some embodiments of this application, the first dissociated single-crystal thin film and the second dissociated single-crystal thin film include Bi2Sr2CaCu2O8, Bi2Sr2CuO6, and Bi2Sr2Ca2Cu3O. 10 and Bi2Sr2Ca3Cu4O 12 At least one of them.

[0027] A second aspect of this application provides a superconducting diode prepared by any of the above methods.

[0028] In some embodiments of this application, the rectification efficiency of the superconducting diode is 100%.

[0029] In some embodiments of this application, the superconducting diode operates at a temperature of 50–80 K (liquid nitrogen temperature).

[0030] The superconducting diode of this application is obtained by DC modulation and AC modulation of a high-temperature superconducting Josephson junction device, which can achieve high rectification efficiency and high operating temperature.

[0031] Additional aspects and advantages of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. Attached Figure Description

[0032] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. The above and other objectives, features, and advantages of this application will become more apparent by referring to the accompanying drawings and describing exemplary embodiments in detail.

[0033] Figure 1 A schematic diagram of the electrode structure of a high-temperature superconducting Josephson junction device for fabricating a superconducting diode according to an example embodiment of this application is shown.

[0034] Figure 2 A schematic diagram of a high-temperature superconducting Josephson junction device for fabricating a superconducting diode according to an example embodiment of this application is shown.

[0035] Figure 3 A fabrication process flow diagram of a superconducting diode according to an example embodiment of this application is shown.

[0036] Figure 4A process flow diagram of modulating a high-temperature superconducting Josephson junction device according to an example embodiment of this application is shown.

[0037] Figure 5 A process flow diagram for fabricating a high-temperature superconducting Josephson junction device according to an example embodiment of this application is shown.

[0038] Figure 6 The current-voltage characteristic curves of a high-temperature superconducting Josephson junction device modulated according to an example embodiment of this application are shown.

[0039] Figure 7 A partial process flow diagram is shown for fabricating a high-temperature superconducting Josephson junction device according to an example embodiment of this application. Detailed Implementation

[0040] Exemplary embodiments will now be described more fully with reference to the accompanying drawings. However, these exemplary embodiments can be implemented in many forms and should not be construed as limited to the embodiments set forth herein; rather, they are provided so that this application will be thorough and complete, and will fully convey the concept of the exemplary embodiments to those skilled in the art. The same drawings in the figures show the same or similar parts, and therefore repeated descriptions of them will be omitted.

[0041] The user information (including but not limited to user device information, user personal information, etc.) and data (including but not limited to data used for analysis, data stored, data displayed, etc.) involved in this application are all information and data authorized by the user or fully authorized by all parties. Furthermore, the collection, use and processing of the relevant data must comply with the relevant laws, regulations and standards of the relevant countries and regions, and corresponding operation entry points are provided for users to choose to authorize or refuse.

[0042] The described features, structures, or characteristics can be combined in any suitable manner in one or more embodiments. Numerous specific details are provided in the following description to give a full understanding of embodiments of this disclosure. However, those skilled in the art will recognize that the technical solutions of this disclosure can be practiced without one or more of these specific details, or other methods, components, materials, apparatus, or operations may be employed. In these cases, well-known structures, methods, apparatuses, implementations, materials, or operations will not be shown or described in detail.

[0043] The flowcharts shown in the accompanying drawings are merely illustrative and do not necessarily include all content and operations / steps, nor do they necessarily have to be performed in the described order. For example, some operations / steps can be broken down, while others can be combined or partially combined; therefore, the actual execution order may change depending on the specific circumstances.

[0044] The terms "first," "second," etc., in the specification, claims, and accompanying drawings of this application are used to distinguish different objects, not to describe a specific order. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion. For example, a process, method, system, product, or apparatus that includes a series of steps or units is not limited to the listed steps or units, but may optionally include steps or units not listed, or may optionally include other steps or units inherent to these processes, methods, products, or apparatuses.

[0045] The specific embodiments according to this application will now be described in detail with reference to the accompanying drawings.

[0046] The superconducting diode provided in this application is obtained by DC modulation and AC modulation of a high-temperature superconducting Josephson junction device. The high-temperature superconducting Josephson junction device used in this application includes electrodes and a dissociated single-crystal thin film attached to the electrodes.

[0047] Figure 1 The electrodes of a high-temperature superconducting Josephson junction device for fabricating a superconducting diode are shown in an exemplary embodiment of this application. For example... Figure 1 As shown, the electrode pack of the high-temperature superconducting Josephson junction device is arranged in sequence from the first electrode 11 to the fourth electrode 14. Figure 1 In the middle, the first electrode 11 to the fourth electrode 14 are arranged from left to right.

[0048] Figure 2 This application illustrates a high-temperature superconducting Josephson junction device for fabricating a superconducting diode, wherein... Figure 2 The electrode structure of the high-temperature superconducting Josephson junction device shown is as follows: Figure 1 As shown. The first electrode 11 to the fourth electrode 14 are located on the substrate B.

[0049] The dissociated single-crystal thin film includes a first dissociated single-crystal thin film 21 and a second dissociated single-crystal thin film 22, which are partially bonded together. The first dissociated single-crystal thin film 21 is bonded to the first electrode 11 and the second electrode 12, and the second dissociated single-crystal thin film 22 is bonded to the third electrode 13 and the fourth electrode 14. The first dissociated single-crystal thin film 21 and the second dissociated single-crystal thin film 22 are obtained by dissociating the same single-crystal thin film.

[0050] The superconducting diode of this application is obtained by DC modulation and AC modulation of a high-temperature superconducting Josephson junction device, which can achieve high rectification efficiency and high operating temperature. In some embodiments of this application, the rectification efficiency of the superconducting diode can be 100%. In embodiments of this application, the operating temperature of the superconducting diode can be 50-80K, for example 77K (liquid nitrogen temperature).

[0051] Optionally, the first dissociated single-crystal thin film 21 and the second dissociated single-crystal thin film 22 include Bi2Sr2CaCu2O8, Bi2Sr2CuO6, and Bi2Sr2Ca2Cu3O. 10 and Bi2Sr2Ca3Cu4O 12 At least one of them. These materials all have excellent properties.

[0052] Figure 2 In this process, the protective layer 23 is attached to the overlapping region of the first dissociated single-crystal thin film 21 and the second dissociated single-crystal thin film 22. Optionally, the protective layer 23 is a boron nitride thin film. In some embodiments of this application, the protective layer 23 may not be included.

[0053] Figure 3 The fabrication process of a superconducting diode according to an example embodiment of this application is illustrated, including step S1: modulating a high-temperature superconducting Josephson junction device. The structure of the high-temperature superconducting Josephson junction device is as follows... Figure 2 As shown, it will not be elaborated further here.

[0054] Optionally, such as Figure 4 Step S1 includes:

[0055] S11: Connect the first electrode to the power supply, the second and third electrodes to the voltage measuring device, and the fourth electrode to ground;

[0056] S12: Cool the ambient temperature of the high-temperature superconducting Josephson junction device to a predetermined temperature below the superconducting transition temperature;

[0057] S13: Apply a DC pulse current with a predetermined pulse signal to the first electrode, so that the current-voltage characteristic curve of the high-temperature superconducting Josephson junction device has rectification characteristics; and

[0058] S14: Apply an alternating current with a predetermined microwave signal to the first electrode, causing a voltage step to appear on one side of the current-voltage characteristic curve and a superfluid state to appear on the other side.

[0059] This application presents a superconducting diode obtained by DC and AC modulation of a high-temperature superconducting Josephson junction device, which can achieve high rectification efficiency and high operating temperature. The technical solution is simple to operate and easy to apply.

[0060] In implementation, step S1 can be:

[0061] The high-temperature superconducting Josephson junction is placed in a low-temperature environment. The first electrode is connected to a power source, the second and third electrodes are connected to a voltage measuring device, and the fourth electrode is grounded. Next, the ambient temperature of the high-temperature superconducting Josephson junction device is cooled to a predetermined temperature. This predetermined temperature is lower than the superconducting transition temperature of the superconducting material in the high-temperature superconducting Josephson junction device. The specific value can be set based on the superconducting transition temperature and actual needs, for example, 50–80 K. Then, a predetermined DC pulse current is applied to the first electrode. This predetermined DC pulse current is generally a specific pulse signal with an amplitude greater than three times the critical current in the current-voltage characteristic curve and a duration of 2–3 seconds; this ensures that the current-voltage characteristic curve of the high-temperature superconducting Josephson junction device has certain rectification characteristics—the critical current magnitudes are different in the positive and negative current directions. Figure 5 (The critical current in the positive direction is less than the critical current in the negative direction). When the input current is between the two critical currents, it will exhibit a resistive state on one side and a zero-voltage state on the other. See the predetermined pulse signal and the volt-ampere characteristic curve for details. Figure 5 Next, an alternating current with a predetermined microwave signal is applied to the first electrode (the Josephson junction responds to high-frequency microwave signals; by applying different microwave frequencies and powers, and through signal feedback, the frequency and power values ​​of the microwaves that produce the Shapino step can be obtained). This causes a voltage step (the Shapino step generated after applying microwaves to the Josephson junction) to appear on one side of the current-voltage characteristic curve (the side with the smaller critical current, shown in the positive current direction in the figure), while the other side exhibits a superfluid state (negative direction, zero voltage state), as shown below. Figure 5 As shown. At this point, the equivalent critical current on the side where the voltage step appears is approximately zero. When rectification modulation behavior of zero voltage on one side and a voltage step on the other side appears, it indicates that the superconducting diode with 100% rectification efficiency has been successfully fabricated. Figure 5 The operating temperature of the superconducting diode is 50K, and in other embodiments of this application, it can be 50-80K.

[0062] Figure 3 In the illustrated embodiment, the fabrication process of the superconducting diode further includes step S0: fabricating a high-temperature superconducting Josephson junction device. In some embodiments of this application, the fabrication process of the superconducting diode may not include step S0.

[0063] Optionally, such as Figure 6 As shown, step S0 includes:

[0064] S01: Prepare a single-crystal thin film on the first substrate.

[0065] In some embodiments of this application, a single crystal sample can be cleaved with adhesive tape, and the single crystal on the tape can be attached to the surface of a first substrate. After pressing for a certain period of time, the tape can be lifted off, at which point a large number of single crystal films remain on the first substrate.

[0066] S02: Electrodes are fabricated on the second substrate.

[0067] In some embodiments of this application, a corresponding photomask can be designed according to the required electrode shape, and then an electrode pattern can be formed on a second substrate by photolithography, followed by vapor deposition to obtain the first to fourth electrodes.

[0068] S03: Dissociate single-crystal thin films to obtain dissociated single-crystal thin films.

[0069] In some embodiments of this application, a transfer medium can be used to dissociate the single-crystal thin film on the first substrate to obtain a dissociated single-crystal thin film.

[0070] S04: The first electrode and the second electrode are bonded to the dissociated single crystal thin film on the second substrate.

[0071] In some embodiments of this application, the first electrode and the second electrode on the dissociated single crystal film and the second substrate can be bonded together by a transfer medium, and then the transfer medium is detached from the dissociated single crystal film, leaving the dissociated single crystal film on the second substrate.

[0072] S05: The dissociated single-crystal thin film is dissociated again to obtain the first dissociated single-crystal thin film and the second dissociated single-crystal thin film.

[0073] In some embodiments of this application, a transfer medium can be used to dissociate the single-crystal thin film to obtain a second and a third dissociated single-crystal thin film. In this case, the first dissociated single-crystal thin film is attached to the first and second electrodes, while the second dissociated single-crystal thin film is separated from the first dissociated single-crystal thin film and is located on the transfer medium.

[0074] S06: The second dissociated single crystal film is bonded to the first dissociated single crystal film, the third electrode, and the fourth electrode on the second substrate to obtain a high-temperature superconducting Josephson junction device.

[0075] In some embodiments of this application, the angle between the first and second dissociated single-crystal thin films can be adjusted by rotating the stage by a certain angle, and then the second dissociated single-crystal thin film is bonded to the first dissociated single-crystal thin film, the third electrode, and the fourth electrode to obtain a high-temperature superconducting Josephson junction device.

[0076] In some embodiments of this application, the fabrication of a high-temperature superconducting Josephson junction device further includes: attaching a protective layer to the overlapping region of the first and second dissociated single-crystal thin films. As mentioned above, the protective layer may be a boron nitride thin film.

[0077] In practice, step S0 can specifically be as follows:

[0078] 1) Preparation of transfer medium PDMS: Mix the Dow Corning Sylgard 184 matrix and curing agent in a 10:1 ratio, drop one drop onto a clean sapphire glass slide to form a droplet, and heat it with a hot plate at about 300°C for more than 10 minutes to fully bond the PDMS and the sapphire glass slide. Then, mount the sapphire with the PDMS drop onto the cantilever of the transfer stage.

[0079] 2) Processing the first substrate: Prepare a clean 4mm*10mm silicon dioxide / silicon substrate (i.e., a composite substrate of silicon dioxide and silicon), ultrasonically clean it in acetone and isopropanol for about 10 minutes, and further process the substrate with oxygen plasma to obtain the first substrate A. The conditions used are: power 100W, oxygen pressure 0.3mbar, time 3min.

[0080] 3) Cleaving single crystal thin film on the first substrate A: In the glove box, cleaving single crystal sample with tape and attaching the single crystal on the tape to the surface of the first substrate, pressing for about 10 seconds, and then peeling off the tape. At this time, a large number of single crystal thin films 20a remain on the first substrate.

[0081] 4) Processing the second substrate: Prepare a clean 4mm*10mm silicon dioxide / silicon substrate, and ultrasonically clean it in acetone and isopropanol for about 10 minutes to obtain the second substrate B.

[0082] 5) Electrode fabrication on the second substrate B: Spin-coat AZ5214 photoresist onto the cleaned surface of the second substrate under the following conditions: 6600 r / min for 1 min, followed by heating at 95°C for 2 min on a hot plate. Design a corresponding photomask according to the required electrode shape, and form the electrode pattern by exposure using a UV lithography machine. The exposure conditions are: exposure for 20 s, development with MF319 for approximately 45 s, and fixing with deionized water for approximately 1 min. Place the exposed second substrate into an electron beam deposition machine to sequentially deposit titanium and gold, thereby forming the first electrode 11 to the fourth electrode 14. The electrode structure shape is as follows: Figure 1 As shown, the thicknesses of titanium and gold in the first electrode 11 to the fourth electrode 14 are 5 nm and 30 nm, respectively. The substrate with the deposited electrodes is immersed in acetone for at least 3 hours, and the metal on the photoresist is removed using an ultrasonic cleaner. It is then cleaned again with acetone and isopropanol to complete the electrode fabrication. To increase the adhesion between the single-crystal thin film and the second substrate, the second substrate B is cleaned using oxygen plasma under the following conditions: power 60 W, oxygen pressure 0.4 mbar, and time 3 min.

[0083] 6) Transferring the single-crystal thin film 20a from the first substrate A to the second substrate B: Place the first substrate A and the second substrate B simultaneously on the transfer stage inside the glove box, and simultaneously cool the stage and the cantilever to -60°C. Using a microscope, locate the dissociated single-crystal thin film 20a on the first substrate A. Use PDMS on the cantilever to further cleave the selected dissociated single-crystal thin film, obtaining a new dissociated single-crystal thin film 20b; as shown... Figure 7 As shown in (a), the dissociated single-crystal thin film on PDMS is transferred to the second substrate B, and then... Figure 7 As shown in (b), the PDMS is bonded to the first electrode 11 and the second electrode 12, and the stage and cantilever are heated to above -20°C to remove the PDMS from the second substrate B, leaving the dissociated single crystal film 20b on the second substrate B.

[0084] 7) Low-Temperature Cleavage Transfer Summary: The stage and cantilever were cooled again to -60℃, and the dissociated single-crystal thin film 20b was cleaved using PDMS, as follows... Figure 7 As shown in (c), the first dissociated single-crystal thin film 21 and the second dissociated single-crystal thin film 22 are obtained at this time. The stage is rotated by a certain angle (from 0 degrees to 90 degrees, depending on the requirements), as shown... Figure 7 As shown in (d), the first dissociated single-crystal thin film 21 and the second dissociated single-crystal thin film 22 are bonded together, and the second dissociated single-crystal thin film 22 is bonded to the third electrode 13 and the fourth electrode 14. Then, the cantilever is heated to above -20°C, and the stage temperature is controlled at -40°C to slowly release PDMS, as shown in (d). Figure 7 As shown in (e).

[0085] 8) Transfer of Protective Layer: Controlling the stage temperature at -40℃, cleave boron nitride on PDMS, select a boron nitride film of suitable thickness (protective layer 23) (approximately 30-60 nm), and transfer it to the overlap region of the first cleaved single-crystal film 21 and the second cleaved single-crystal film 22, such as... Figure 7 As shown in (f), the stage is heated to above -20°C to slowly release PDMS, thus completing the preparation of the entire high-temperature Josephson junction.

[0086] This application combines AC (microwave) and DC modulation methods to obtain a high-temperature superconducting diode with high rectification efficiency and high operating temperature. The technical solution is simple to operate and easy to apply.

[0087] The embodiments of this application have been described in detail above. Specific examples have been used to illustrate the principles and implementation methods of this application. The descriptions of the embodiments above are only for the purpose of helping to understand the method and core ideas of this application. Furthermore, any changes or modifications made by those skilled in the art based on the ideas of this application, and on the specific implementation methods and application scope of this application, are all within the scope of protection of this application. Therefore, the content of this specification should not be construed as a limitation of this application.

Claims

1. A method for fabricating a superconducting diode, characterized in that, The superconducting diode includes a high-temperature superconducting Josephson junction device, which includes an electrode and a dissociated single-crystal thin film attached to the electrode. The electrodes include a first electrode, a second electrode, a third electrode, and a fourth electrode arranged in sequence. The dissociated single-crystal thin film includes a first dissociated single-crystal thin film and a second dissociated single-crystal thin film partially bonded to the first dissociated single-crystal thin film. The first dissociated single-crystal thin film and the second dissociated single-crystal thin film are obtained by dissociating the same single-crystal thin film. The first dissociated single-crystal thin film is bonded to the first electrode and the second electrode, and the second dissociated single-crystal thin film is bonded to the third electrode and the fourth electrode. The method includes: Modulation of the high-temperature superconducting Josephson junction device includes: Connect the first electrode to a power source, connect the second and third electrodes to a voltage measuring device, and ground the fourth electrode; The ambient temperature of the high-temperature superconducting Josephson junction device is cooled to a predetermined temperature below the superconducting transition temperature; A DC pulse current with a predetermined pulse signal is applied to the first electrode, causing the current-voltage characteristic curve of the high-temperature superconducting Josephson junction device to exhibit rectifying characteristics; and An alternating current with a predetermined microwave signal is applied to the first electrode, causing a voltage step to appear on one side of the current-voltage characteristic curve and a superfluid state to appear on the other side.

2. The method according to claim 1, characterized in that, When a voltage step appears on one side of the current-voltage characteristic curve, the critical current on that side of the current-voltage characteristic curve becomes zero by adjusting the power of the alternating current.

3. The method according to claim 1, characterized in that, Also includes: The high-temperature superconducting Josephson junction device was fabricated.

4. The method according to claim 3, characterized in that, Fabrication of the high-temperature superconducting Josephson junction device includes: Single-crystal thin films are prepared on a first substrate; The electrode is fabricated on the second substrate; The single-crystal thin film is dissociated to obtain a dissociated single-crystal thin film; The first electrode and the second electrode are bonded to the dissociated single crystal thin film on the second substrate; The dissociated single-crystal thin film is further dissociated to obtain a first dissociated single-crystal thin film and a second dissociated single-crystal thin film, wherein the first dissociated single-crystal thin film is bonded to the first electrode and the second electrode, and the second dissociated single-crystal thin film is separated from the first dissociated single-crystal thin film; and The second dissociated single crystal film is bonded to the first dissociated single crystal film, the third electrode, and the fourth electrode on the second substrate to obtain the high-temperature superconducting Josephson junction device.

5. The method according to claim 4, characterized in that, Fabrication of the high-temperature superconducting Josephson junction device further includes: The protective layer is attached to the overlapping area of ​​the first and second dissociated single crystal films.

6. The method according to claim 5, characterized in that, The protective layer is a boron nitride thin film.

7. The method according to claim 1, characterized in that, The first and second dissociated single-crystal thin films include Bi₂Sr₂CaCu₂O₈, Bi₂Sr₂CuO₆, and Bi₂Sr₂Ca₂Cu₃O₈. 10 and Bi2Sr2Ca3Cu4O 12 At least one of them.

8. A superconducting diode, characterized in that, It is prepared by the method described in any one of claims 1 to 7.

9. The superconducting diode according to claim 8, characterized in that, The superconducting diode has a rectification efficiency of 100%.

10. The superconducting diode according to claim 8, characterized in that, The superconducting diode operates at a temperature of 50–80 K.

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