Micro magnetoelectric antenna based on MEMS resonance sound wave excitation and driving circuit thereof

Abstract

The invention discloses a micro magnetoelectric antenna based on MEMS resonance sound wave excitation and a driving circuit thereof. The micro magnetoelectric antenna comprises a PCB layer, an epoxy resin bonding layer, a bonding wire and a plurality of TPoS magnetoelectric antennas. The plurality of TPoS magnetoelectric antennas form a TPoS magnetoelectric antenna array; the TPoS magnetoelectric antenna comprises an SOI (Silicon On Insulator) wafer substrate and a magnetoelectric antenna structure arranged on the SOI wafer substrate; the SOI wafer substrate sequentially comprises a silicon substrate, a buried oxide layer and a device layer from bottom to top; the magnetoelectric antenna structure comprises a piezoelectric layer, an electrode layer and an Fe-Ga magnetostrictive material layer which are sequentially arranged above the device layer; the epoxy resin bonding layer is arranged on the PCB layer, and the TPoS magnetoelectric antenna array is bonded on the PCB layer through the epoxy resin bonding layer; and the bonding wire is used for establishing electrical connection between the electrode layer and the PCB layer. The miniature magnetoelectric antenna has the advantages of being small in size, adjustable in bandwidth, low in power consumption and easy to integrate, and can be effectively applied to the field of miniature wireless equipment.

Description

Technical Field

[0001] This invention relates to the field of microelectromechanical systems (MEMS) technology, specifically to a miniature magnetoelectric antenna based on MEMS resonant acoustic wave excitation and its driving circuit. Background Technology

[0002] Traditional antennas rely on electrical methods to drive the movement of electric charges to form current. The changing current interacts with electric and magnetic fields to radiate electromagnetic waves. Their size is strongly tied to the electromagnetic wavelength, and miniaturization inevitably leads to a decrease in radiation efficiency and a significant increase in impedance matching difficulty. To overcome this limitation, the industry has proposed two non-electrically driven antenna technology paths: one is the mechanically driven antenna, which generates electromagnetic radiation through the linear movement or rotation of electrets / permanent magnets. However, this technology has extremely high requirements for material selection, environmental adaptability, and control precision. Furthermore, the "mechanical movement" characteristic makes it difficult to achieve precise synchronization of array elements, severely limiting its application scenarios and making it unsuitable for miniaturization and integration requirements. The other type is the acoustically excited antenna, which does not require external mechanical drive. It relies on the piezoelectric properties of piezoelectric materials and the magnetostrictive properties of magnetostrictive materials to achieve electromagnetic radiation—by applying voltage to the piezoelectric material to generate sound waves, the strain transfer at the piezoelectric-ferromagnetic interface induces a time-varying magnetic current in the ferromagnetic material, ultimately radiating electromagnetic waves. This technology can adapt to different frequency requirements by selecting bulk or thin film materials, providing a feasible direction for the miniaturization and chip-based development of low-frequency antennas. However, stable and controllable micron-level mechanical vibration drive and material / structure design compatible with integrated processes remain key issues to be overcome.

[0003] The development of microelectromechanical systems (MEMS) manufacturing processes has provided technical support for solving the above problems: MEMS resonators can achieve micron-level mechanical vibration through alternating voltage driving, and their resonant frequency can be precisely controlled by structural geometry and material properties. Furthermore, the manufacturing process is compatible with integrated circuits (CMOS), enabling the integration of multi-frequency devices on a single wafer, laying the foundation for the miniaturization and integration of acoustically excited antennas. Further, the maturity of bulk acoustic wave (BAW) excitation technology ensures the performance optimization of acoustically excited antennas—BAW not only has a wide frequency coverage but also achieves strong magnetoelastic coupling at the target frequency, effectively improving antenna radiation efficiency. However, existing acoustically excited antennas still have two major shortcomings: first, the lack of a "miniaturized magnetoelectric composite structure" design adapted to MEMS processes makes it difficult to achieve a balance between "ultra-small size" and "high radiation efficiency"; second, the lack of scalable solutions for different operating bandwidths makes it impossible to meet the communication needs of various scenarios. Summary of the Invention

[0004] The purpose of this invention is to provide a miniature magnetoelectric antenna based on MEMS resonant acoustic wave excitation and its driving circuit. The miniature magnetoelectric antenna of this invention has the advantages of small size, adjustable bandwidth, low power consumption, and easy integration, and can be effectively applied in the field of miniature wireless devices.

[0005] To achieve the above objectives, the present invention provides the following technical solution: a miniature magnetoelectric antenna based on MEMS resonant acoustic wave excitation, characterized in that it comprises a PCB layer, an epoxy resin bonding layer, bonding wires, and multiple TPoS magnetoelectric antennas; the multiple TPoS magnetoelectric antennas constitute a TPoS magnetoelectric antenna array; the TPoS magnetoelectric antenna includes an SOI wafer substrate and a magnetoelectric antenna structure disposed on the SOI wafer substrate; the SOI wafer substrate comprises, from bottom to top, a silicon substrate, a buried oxide layer, and a device layer; the magnetoelectric antenna structure includes, sequentially disposed above the device layer, a piezoelectric layer, an electrode layer, and an Fe-Ga magnetostrictive material layer; the epoxy resin bonding layer is disposed on the PCB layer, and the TPoS magnetoelectric antenna array is bonded to the PCB layer through the epoxy resin bonding layer; the bonding wires are used to establish an electrical connection between the electrode layer and the PCB layer.

[0006] In the aforementioned micro magnetoelectric antenna based on MEMS resonant acoustic wave excitation, the silicon substrate has a thickness of 400 μm; the buried oxide layer is made of silicon dioxide with a thickness of 1 μm; and the device layer is made of silicon with a thickness of 10 μm.

[0007] The aforementioned micro magnetoelectric antenna based on MEMS resonant acoustic wave excitation has a piezoelectric layer in the shape of a circle, pentagon, ellipse, a circle with a central opening, a pentagon with a central opening, or an ellipse with a central opening; the material of the piezoelectric layer is aluminum nitride, lead zirconate titanate, or zinc oxide; the thickness of the piezoelectric layer is 0.5~2μm, used to correspond to different operating bandwidths.

[0008] The aforementioned micro magnetoelectric antenna based on MEMS resonant acoustic wave excitation has a cavity on its back, with a diameter ranging from 200 to 800 μm to correspond to different operating bandwidths.

[0009] The aforementioned micro magnetoelectric antenna based on MEMS resonant acoustic wave excitation has an electrode layer made of gold or aluminum with a thickness of 1 μm.

[0010] The aforementioned micro magnetoelectric antenna based on MEMS resonant acoustic wave excitation includes an electrode layer comprising a circular open-loop electrode, a circular electrode, electrode leads, a signal pin electrode, and a ground pin electrode. The circular open-loop electrode and the circular electrode are respectively connected to the signal pin electrode located at the edge of the device layer through the electrode lead; the ground pin electrode is provided on both sides of the signal pin electrode; The arrangement of the signal pin electrode and the ground pin electrode forms two sets of GSG probe pin electrodes, which are multiplexed as PCB bonding pin electrodes. The GSG probe pin electrodes are used to measure the performance parameters of the TPoS magnetoelectric antenna, and the PCB bonding pin electrodes are bonded to the antenna pin electrodes of the PCB layer through the bonding wire.

[0011] The aforementioned micro magnetoelectric antenna based on MEMS resonant acoustic wave excitation includes a PCB substrate, PCB ground pin electrodes, and PCB signal pin electrodes. The PCB signal pin electrodes are located at the edge of the PCB substrate, and two PCB ground pin electrodes are arranged on both sides of each PCB signal pin electrode. The layout design of the PCB signal pin electrodes and PCB ground pin electrodes forms eight sets of antenna pin electrodes. The PCB signal pin electrodes and PCB ground pin electrodes on the PCB substrate 101 correspond one-to-one with the signal pin electrodes and ground pin electrodes of the TPoS magnetoelectric antenna in the TPoS magnetoelectric antenna array, and are bonded together by bonding wires.

[0012] The aforementioned micro magnetoelectric antenna based on MEMS resonant acoustic wave excitation further includes a silicon dioxide insulating layer; the silicon dioxide insulating layer is disposed between the device layer and the signal pin electrode and the electrode lead, and its thickness is the same as that of the adjacent piezoelectric layer; the silicon dioxide insulating layer is used to separate the device layer from the electrode layer where the signal pin electrode and the electrode lead are located, so as to avoid grounding.

[0013] In the aforementioned micro magnetoelectric antenna based on MEMS resonant acoustic wave excitation, the Fe-Ga magnetostrictive material layer is circular and located above the electrode layer; the Fe-Ga magnetostrictive material layer is prepared using a high-vacuum magnetron sputtering apparatus, with Fe as the target material. 80 Ga 20 Alloy target.

[0014] The aforementioned micro magnetoelectric antenna based on MEMS resonant acoustic wave excitation, wherein the TPoS magnetoelectric antenna array consists of four TPoS magnetoelectric antennas with different operating bandwidths, the operating bandwidth of the TPoS magnetoelectric antennas being achieved by adjusting the thickness, shape, and aperture state of the piezoelectric layer and the diameter of the cavity on the back of the TPoS magnetoelectric antenna.

[0015] A driving circuit for driving the aforementioned micro magnetoelectric antenna based on MEMS resonant acoustic wave excitation includes a system-on-a-chip, a digital-to-analog converter, a power amplifier, four transmit channels, an impedance matching circuit, a data acquisition circuit, an execution circuit, a demodulation circuit, a low-noise amplifier, four receive channels, and a decoder. The system-on-a-chip is electrically connected to the digital-to-analog converter, data acquisition circuit, execution circuit, demodulation circuit, and decoder, respectively. The output of the digital-to-analog converter is electrically connected to the power amplifier, the output of the power amplifier is electrically connected to the four transmit channels, and the outputs of the four transmit channels are respectively connected to the impedance matching circuit and the receive channel. The output of the receive channel is electrically connected to the low-noise amplifier, and the low-noise amplifier is electrically connected to the demodulation circuit. The decoder is electrically connected to the four transmit channels and the four receive channels, respectively. The impedance matching circuit is electrically connected to the TPoS magnetoelectric antenna array.

[0016] Compared with existing technologies, the present invention has the following advantages: 1. This invention utilizes the core design of "acoustic resonance replacing electromagnetic resonance," leveraging the triple transduction characteristics of piezoelectric and magnetostrictive materials ("electro-acoustic-magnetic") to decouple antenna size from electromagnetic wave wavelength. Since the speed of sound (approximately 3000-11000 m / s) is much smaller than the speed of electromagnetic waves (speed of light), at the same operating frequency, the size of the TPoS magnetoelectric antenna can be reduced by four to five orders of magnitude compared to traditional metal antennas, completely breaking through the Chuharlington limit's constraint on the size of electrically small antennas. This miniaturization characteristic can be directly adapted to implantable medical devices (IMDs), miniature portable communication devices, and other scenarios, solving the core problems of traditional antennas being "too large to be implanted" and "too heavy to be portable."

[0017] 2. Traditional electrically small antennas rely on current resonance to radiate electromagnetic waves, resulting in inherent ohmic losses. Furthermore, their miniaturization necessitates precise tuning circuits, further increasing power consumption. In contrast, this invention excites a piezoelectric layer to generate mechanical vibrations, which are then transmitted through a strain-mediated Fe-Ga magnetostrictive material layer to produce magnetized oscillations that radiate electromagnetic waves. This significantly reduces ohmic losses caused by current thermal effects, resulting in a substantial decrease in overall antenna power consumption. Simultaneously, the use of MEMS technology ensures tight bonding between the various structural layers (such as the piezoelectric layer, electrode layer, and Fe-Ga magnetostrictive material layer), leading to high strain transfer efficiency and further reducing energy loss.

[0018] 3. This invention optimizes antenna bandwidth and radiation efficiency through a dual design: On one hand, the operating bandwidth of a single TPoS magnetoelectric antenna can be precisely adjusted by controlling the thickness, shape, and aperture state of the piezoelectric layer, as well as the diameter of the back cavity; on the other hand, the TPoS magnetoelectric antenna array consists of four TPoS magnetoelectric antennas with different operating bandwidths. Combined with the PCB layer packaging design, this significantly improves radiation efficiency while expanding the overall operating bandwidth of the antenna. At the same frequency, the radiation efficiency of this invention is far superior to existing electrically small antennas of the same size, meeting the needs of multi-frequency communication scenarios (such as military communication and multi-band mobile communication).

[0019] 4. The driving circuit of this invention can realize the full-link function of data acquisition, electromagnetic wave transmission, electromagnetic wave reception, and action execution: the on-chip system, as the core, can control data acquisition, signal modulation / demodulation, channel selection, and the action of the execution circuit; only one transmission / reception channel is selected at a time, ensuring the accuracy and stability of signal transmission. This complete and controllable function allows the antenna to be directly applied to implantable medical device scenarios, enabling it to transmit in-vivo monitoring data by transmitting electromagnetic waves and to receive external commands to drive the execution circuit for real-time intervention, solving the problem of existing micro-antennas being "single-function and difficult to control in a coordinated manner". Attached Figure Description

[0020] Figure 1 This is an exploded view of the structure of the miniature magnetoelectric antenna of the present invention; Figure 2 This is a schematic diagram of the structure of the miniature magnetoelectric antenna of the present invention; Figure 3 This is an exploded view of the TPoS magnetoelectric antenna of the present invention; Figure 4 This is a schematic diagram of the electrode design for the TPoS magnetoelectric antenna of the present invention; Figure 5 This is a cross-sectional view of the TPoS magnetoelectric antenna of the present invention; Figure 6 The shape design of the piezoelectric layer of this invention; Figure 7 This is a schematic diagram of the PCB layer structure of the present invention; Figure 8 This is the main functional circuit of the driving circuit of the present invention; Figure 9 This is a schematic diagram of the transmit / receive / bandwidth selection circuit in the driving circuit of the present invention; Figure 10 This is a schematic diagram illustrating the application of the present invention in the field of implantable medical devices; Figure 11 This is a schematic diagram illustrating the working principle of the present invention.

[0021] Figure Labels 1. PCB layer; 2. Epoxy bonding layer; 3. Silicon substrate; 4. Buried oxide layer; 5. Device layer; 6. Silicon dioxide insulating layer; 7. Piezoelectric layer; 8. Electrode layer; 9. Fe-Ga magnetostrictive material layer; 10. Bonding wire; 11. TPoS magnetoelectric antenna array; 101. PCB substrate; 102. PCB ground pin electrode; 103. PCB signal pin electrode; 104. Antenna pin electrode; 801. Circular open-loop electrode; 802. Circular electrode; 803. Electrode lead; 804. Signal pin electrode 805, Ground pin electrode; 806, GSG probe pin electrode; 807, PCB bonding pin electrode; 1101, TPoS magnetoelectric antenna; 12, Drive circuit; 1201, System-on-chip; 1202, Digital-to-analog converter; 1203, Power amplifier; 1204, Transmit channel; 1205, Impedance matching circuit; 1206, Data acquisition circuit; 1207, Execution circuit; 1208, Demodulation circuit; 1209, Low noise amplifier; 1210, Receive channel; 12011, Decoder. Detailed Implementation

[0022] The specific embodiments of the present invention will now be described in detail with reference to the accompanying drawings, but it should be understood that the scope of protection of the present invention is not limited to the specific embodiments. All other instances in which the components of the embodiments of the present invention described and shown in the accompanying drawings are arranged and designed in various different configurations are within the scope of protection.

[0023] Example 1: A miniature magnetoelectric antenna based on MEMS resonant acoustic wave excitation. For example... Figure 1 and Figure 2 As shown, it includes a PCB layer 1, an epoxy resin bonding layer 2, bonding wires 10, and multiple TPoS magnetoelectric antennas 1101; the multiple TPoS magnetoelectric antennas 1101 form a TPoS magnetoelectric antenna array 11, wherein the TPoS magnetoelectric antennas 1101 are used to radiate and receive electromagnetic wave signals, and the TPoS magnetoelectric antenna array 11 is designed to improve radiation efficiency and expand operating bandwidth.

[0024] The TPoS magnetoelectric antenna 1101 includes an SOI wafer substrate, on which a magnetoelectric antenna structure is disposed; such as Figure 3 As shown, the SOI wafer substrate includes a silicon substrate 3, a buried oxide layer 4, and a device layer 5. The buried oxide layer 4 is disposed on the silicon substrate 3, and the device layer 5 is disposed on the buried oxide layer 4. The magnetoelectric antenna structure includes a piezoelectric layer 7, an electrode layer 8, and an Fe-Ga magnetostrictive material layer 9 disposed above the device layer 5. See also... Figure 5The magnetoelectric antenna structure has a circular cavity on its back side, located below the resonant region of the magnetoelectric antenna. This circular cavity is obtained by deep reactive ion etching of the silicon substrate 3, and its diameter ranges from 200 to 800 μm to accommodate different operating bandwidths. In other embodiments, the cavity on the back side of the TPoS magnetoelectric antenna 1101 can be pentagonal, elliptical, or other shapes to improve the parasitic resonance of the TPoS magnetoelectric antenna 1101.

[0025] The piezoelectric layer 7 is made of aluminum nitride, is circular in shape, and has a thickness of 0.5~2μm. It is used to correspond to different resonant frequencies. The piezoelectric layer 7 is grown on the silicon surface of device layer 5 by magnetron sputtering as a seed layer, and then patterned using dry etching. In other embodiments, the piezoelectric layer 7 can be made of lead zirconate titanate or zinc oxide, and its shape can be pentagonal, elliptical, pentagonal with a central aperture, elliptical with a central aperture, or circular with a central aperture, etc., to generate different resonant modes and achieve bandwidth control. See [link to relevant documentation]. Figure 6 .

[0026] The electrode layer 8 is made of gold or aluminum and has a thickness of 1 μm. The electrode layer 8 can be grown on the device layer 5, the silicon dioxide insulating layer 6, and the piezoelectric layer 7 by electron beam evaporation or magnetron sputtering, and then the electrode is patterned.

[0027] In this embodiment, as Figure 4 As shown, the electrode layer 8 can be divided into a circular open-loop electrode 801, a circular electrode 802, an electrode lead 803, a signal pin electrode 804, and a ground pin electrode 805. The circular open-loop electrode 801 is connected to the signal pin electrode 804 located at the edge of the device layer 5 via the electrode lead 803; the circular electrode 802 is connected to the signal pin electrode 804 located at the edge of the device layer 5 via the electrode lead 803; ground pin electrodes 805 are respectively provided on both sides of the signal pin electrode 804; the layout design of the signal pin electrode 804 and the ground pin electrode 805 forms two sets of GSG probe pin electrodes 806, which can be reused as PCB bonding pin electrodes 807. A silicon dioxide insulating layer 6 is disposed below the signal pin electrode 804 and the electrode lead 803. The thickness of the silicon dioxide insulating layer 6 follows the thickness of the adjacent piezoelectric layer 7. It is formed by thermal evaporation and patterning using wet etching. The silicon dioxide insulating layer 6 separates the device layer 5 and the electrode layer 8 containing the signal pin electrode 804 and the electrode lead 803, preventing grounding. The GSG probe pin electrode 806 is used to directly measure the performance parameters of the TPoS magnetoelectric antenna 1101. The PCB bonding pin electrode 807 is used to bond to the antenna pin electrode 104 of the PCB layer 1 via bonding wire 10.

[0028] Preferably, the Fe-Ga magnetostrictive material layer 9 is prepared by high-vacuum magnetron sputtering equipment, the target material is Fe80Ga20 alloy target, and the Fe80Ga20 thin film is patterned by ion beam etching.

[0029] Preferably, the TPoS magnetoelectric antenna array 11 consists of four TPoS magnetoelectric antennas 1101 with different bandwidths. To obtain different operating bandwidths, the thicknesses of their piezoelectric layers 7 are set to 0.5 μm, 0.7 μm, 1.0 μm, and 1.5 μm, respectively, and the shape of the piezoelectric layers 7 is circular. In other embodiments, the thickness of the piezoelectric layers can be adjusted. The epoxy resin bonding layer 2 bonds the TPoS magnetoelectric antenna array 11 to the PCB layer 1.

[0030] like Figure 7 As shown, the PCB layer 1 can be divided into a PCB substrate 101, PCB ground pin electrodes 102, and PCB signal pin electrodes 103. The PCB signal pin electrodes 103 are located at the edge of the PCB substrate 101, and two PCB ground pin electrodes 102 are arranged on both sides of each PCB signal pin electrode 103. The layout design of the PCB signal pin electrodes 103 and PCB ground pin electrodes 102 forms eight sets of antenna pin electrodes 104, which facilitates the assembly of MEMS resonant acoustic wave excited miniature magnetoelectric antennas to target devices and testing. The PCB signal pin electrodes 103 and PCB ground pin electrodes 102 on the PCB substrate 101 correspond one-to-one with the signal pin electrodes 804 and ground pin electrodes 805 in the electrode layer 8 of the TPoS magnetoelectric antenna 1101 in the TPoS magnetoelectric antenna array 11, and the bonding wires 10 bond them one by one.

[0031] In this embodiment, as Figure 11 As shown, a signal is applied to both ends of the piezoelectric layer through the antenna pin electrodes. The piezoelectric layer is excited to generate a Lamb wave resonance. Through strain transfer at the interface between the piezoelectric layer and the Fe-Ga magnetostrictive material layer, a time-varying magnetic current is induced in the Fe-Ga magnetostrictive material layer, thus realizing the radiation of electromagnetic waves. Thanks to the decoupling of antenna size from electromagnetic wavelength and MEMS micro / nano manufacturing processes, a miniaturized Lamb wave-excited magnetoelectric antenna manufactured by MEMS has been realized. In this embodiment, the TPoS magnetoelectric antenna obtains different operating bandwidths by changing the thickness of the piezoelectric layer. By arranging four TPoS magnetoelectric antennas with different bandwidths into an array and packaging them together, the operating bandwidth of the miniature magnetoelectric antenna is expanded, and the radiation efficiency is also improved. The radiation efficiency of the miniature magnetoelectric antenna based on MEMS resonant acoustic wave excitation operating at the same frequency is far superior to that of existing electrically small antennas of the same size.

[0032] Example 2: Application of MEMS resonant acoustic wave-excited miniature magnetoelectric antennas in implantable medical devices, such as... Figure 10As shown. This embodiment includes a miniature magnetoelectric antenna based on MEMS resonant acoustic wave excitation and its driving circuit. The miniature magnetoelectric antenna based on MEMS resonant acoustic wave excitation is used to transmit and receive electromagnetic wave signals, and the driving circuit is used to drive the miniature magnetoelectric antenna based on MEMS resonant acoustic wave excitation to achieve the above processes.

[0033] like Figure 8 and Figure 9 As shown, the driving circuit includes a system-on-a-chip 1201, a digital-to-analog converter 1202, a power amplifier 1203, four transmit channels 1204, an impedance matching circuit 1205, a data acquisition circuit 1206, an execution circuit 1207, a demodulation circuit 1208, a low-noise amplifier 1209, four receive channels 1210, and a decoder 12011; The system-on-a-chip 1201 is electrically connected to the digital-to-analog converter 1202, the data acquisition circuit 1206, the execution circuit 1207, the demodulation circuit 1208, and the decoder 12011, respectively. The output terminal of the digital-to-analog converter 1202 is electrically connected to the power amplifier 1203, and the output terminal of the power amplifier 1203 is electrically connected to the four transmit channels 1204. The output terminals of the four transmit channels 1204 are respectively connected to the impedance matching circuit 1205 and the receive channel 1210. The output terminal of the receive channel 1210 is electrically connected to the low-noise amplifier 1209, and the low-noise amplifier 1209 is electrically connected to the demodulation circuit 1208. The decoder 12011 is electrically connected to the four transmit channels 1204 and the four receive channels 1210, respectively. The impedance matching circuit 1205 is electrically connected to the TPoS magnetoelectric antenna array 11.

[0034] The TPoS magnetoelectric antenna array 11 in the miniature magnetoelectric antenna is electrically connected to the driving circuit 12 through the antenna pin electrodes 104 on the PCB layer 1. A separate impedance matching circuit 1205 in the driving circuit is connected to two PCB signal pin electrodes 103 of the two antenna pin electrodes 104 corresponding to the same TPoS magnetoelectric antenna 1101.

[0035] like Figure 11As shown, the driving circuit 12 acquires the internal human body information collected by the data acquisition circuit 1206 through the system-on-chip (SoC) 1201. The SoC 1201 digitally modulates the acquired data, and the digitally modulated signal is converted into an analog signal by the digital-to-analog converter (DAC) 1202. The power of the analog signal is then amplified by the power amplifier (PA) 1203. After passing through four transmission channels 1204 (TX1 / TX2 / TX3 / TX4) and the impedance matching circuit 1205, the analog signal is applied to one of the TPoS magnetoelectric antennas 1101 in the TPoS magnetoelectric antenna array 11. Subsequently, the analog signal is radiated into space in the form of electromagnetic waves.

[0036] The TPoS magnetoelectric antenna 1101 in the TPoS magnetoelectric antenna array 11 captures electromagnetic wave signals and converts them into time-varying voltage signals. These signals pass through an impedance matching circuit 1205, four receiving channels 12010 (RX1 / RX2 / RX3 / RX4, respectively), and a low-noise amplifier (LNA) 1209. Subsequently, the time-varying voltage signals are demodulated by a demodulation circuit 1208 and transformed into readable signals that can be recognized by the system-on-chip 1201. After reading the signal, the system-on-chip 1201 makes a decision and controls the execution circuit 1207 to perform an action.

[0037] The decoder 12011 in the driving circuit 12 is controlled by the system-on-chip 1201. At the same time, it selects only one of the eight channels: TX1, TX2, TX3, TX4 transmit channels 1204 and RX1, RX2, RX3, RX4 receive channels 12010. This enables the conversion between transmitting and receiving electromagnetic waves, and selects TPoS magnetoelectric antennas 1101 with different operating bandwidths in the TPoS magnetoelectric antenna array 11 to achieve the purpose of switching the operating bandwidth.

[0038] In this embodiment, the driving circuit 12 drives a micro magnetoelectric antenna based on MEMS resonant acoustic wave excitation to radiate electromagnetic waves to transmit the data collected by the in vivo data acquisition circuit 1206 to the medical instrument, thereby realizing real-time monitoring of the in vivo condition. The medical instrument transmits the command modulated into an electromagnetic wave signal into space. The driving circuit 12 drives the micro magnetoelectric antenna based on MEMS resonant acoustic wave excitation to receive the electromagnetic wave signal containing the command information. After the on-chip system 1201 reads the command information, it drives the execution circuit 1207 to perform the action, thereby realizing real-time intervention on the target inside the body.

[0039] In summary, the miniature magnetoelectric antenna of the present invention has the advantages of small size, adjustable bandwidth, low power consumption, and easy integration, and can be effectively applied in the field of miniature wireless devices.

Claims

1. A miniature magnetoelectric antenna based on MEMS resonant acoustic wave excitation, characterized in that: The device includes a PCB layer (1), an epoxy resin bonding layer (2), bonding wires (10), and multiple TPoS magnetoelectric antennas (1101); the multiple TPoS magnetoelectric antennas (1101) form a TPoS magnetoelectric antenna array (11); the TPoS magnetoelectric antenna (1101) includes an SOI wafer substrate and a magnetoelectric antenna structure disposed on the SOI wafer substrate; the SOI wafer substrate consists of a silicon substrate (3), a buried oxide layer (4), and a device layer (5) from bottom to top; the magnetoelectric antenna structure includes a piezoelectric layer (7), an electrode layer (8), and an Fe-Ga magnetostrictive material layer (9) disposed sequentially above the device layer (5); the epoxy resin bonding layer (2) is disposed on the PCB layer (1), and the TPoS magnetoelectric antenna array (11) is bonded to the PCB layer (1) through the epoxy resin bonding layer (2); the bonding wires (10) are used to establish an electrical connection between the electrode layer (8) and the PCB layer (1).

2. The miniature magnetoelectric antenna based on MEMS resonant acoustic wave excitation according to claim 1, characterized in that: The silicon substrate (3) has a thickness of 400 μm; the buried oxide layer (4) is made of silicon dioxide and has a thickness of 1 μm; the device layer (5) is made of silicon and has a thickness of 10 μm.

3. The miniature magnetoelectric antenna based on MEMS resonant acoustic wave excitation according to claim 1, characterized in that: The piezoelectric layer (7) is circular, pentagonal, elliptical, circular with a central hole, pentagonal with a central hole, or elliptical with a central hole; the material of the piezoelectric layer (7) is aluminum nitride, lead zirconate titanate, or zinc oxide; the thickness of the piezoelectric layer (7) is 0.5~2μm, used to correspond to different working bandwidths.

4. The miniature magnetoelectric antenna based on MEMS resonant acoustic wave excitation according to claim 1, characterized in that: The TPoS magnetoelectric antenna (1101) has a cavity on its back, the diameter of which ranges from 200 to 800 μm to correspond to different operating bandwidths.

5. The miniature magnetoelectric antenna based on MEMS resonant acoustic wave excitation according to claim 1, characterized in that: The electrode layer (8) is made of gold or aluminum and has a thickness of 1 μm. The electrode layer (8) includes a circular open-loop electrode (801), a circular electrode (802), an electrode lead (803), a signal pin electrode (804), and a ground pin electrode (805). The circular open-loop electrode (801) and the circular electrode (802) are respectively connected to the signal pin electrode (804) located at the edge of the device layer (5) through the electrode lead (803); the ground pin electrode (805) is provided on both sides of the signal pin electrode (804). The arrangement of the signal pin electrode (804) and the ground pin electrode (805) forms two sets of GSG probe pin electrodes (806), which are multiplexed as PCB bonding pin electrodes (807). The GSG probe pin electrodes (806) are used to measure the performance parameters of the TPoS magnetoelectric antenna (1101), and the PCB bonding pin electrodes (807) are bonded to the antenna pin electrodes (104) of the PCB layer (1) through the bonding line (10).

6. The miniature magnetoelectric antenna based on MEMS resonant acoustic wave excitation according to claim 5, characterized in that: The PCB layer (1) includes a PCB substrate (101), a PCB ground pin electrode (102), and a PCB signal pin electrode (103). The PCB signal pin electrode (103) is located at the edge of the PCB substrate (101), and two PCB ground pin electrodes (102) are arranged on both sides of each PCB signal pin electrode (103). The layout design of the PCB signal pin electrode (103) and the PCB ground pin electrode (102) forms eight sets of antenna pin electrodes (104). The PCB signal pin electrode (103) and the PCB ground pin electrode (102) on the PCB substrate 101 correspond one-to-one with the signal pin electrode (804) and the ground pin electrode (805) of the TPoS magnetoelectric antenna (1101) in the TPoS magnetoelectric antenna array (11), and are bonded by bonding wire (10).

7. The miniature magnetoelectric antenna based on MEMS resonant acoustic wave excitation according to claim 5, characterized in that: It also includes a silicon dioxide insulating layer (6); the silicon dioxide insulating layer (6) is disposed between the device layer (5) and the signal pin electrode (804) and the electrode lead (803), and its thickness is the same as that of the adjacent piezoelectric layer (7); the silicon dioxide insulating layer (6) is used to separate the device layer (5) from the electrode layer (8) where the signal pin electrode (804) and the electrode lead (803) are located, so as to avoid grounding.

8. The miniature magnetoelectric antenna based on MEMS resonant acoustic wave excitation according to claim 1, characterized in that: The Fe-Ga magnetostrictive material layer (9) is circular and located above the electrode layer (8); the Fe-Ga magnetostrictive material layer (9) is prepared by high-vacuum magnetron sputtering equipment, and the target material is Fe. 80 Ga 20 Alloy target.

9. The miniature magnetoelectric antenna based on MEMS resonant acoustic wave excitation according to claim 1, characterized in that: The TPoS magnetoelectric antenna array (11) consists of four TPoS magnetoelectric antennas (1101) with different operating bandwidths. The operating bandwidth of the TPoS magnetoelectric antenna (1101) is achieved by adjusting the thickness, shape, and opening state of the piezoelectric layer (7) and the diameter of the cavity on the back of the TPoS magnetoelectric antenna (1101).

10. A driving circuit for driving the micro magnetoelectric antenna based on MEMS resonant acoustic wave excitation as described in any one of claims 1-9, characterized in that: It includes a system-on-a-chip (1201), a digital-to-analog converter (1202), a power amplifier (1203), four transmit channels (1204), an impedance matching circuit (1205), a data acquisition circuit (1206), an execution circuit (1207), a demodulation circuit (1208), a low-noise amplifier (1209), four receive channels (1210), and a decoder (12011). The system-on-a-chip (1201) is electrically connected to the digital-to-analog converter (1202), data acquisition circuit (1206), execution circuit (1207), demodulation circuit (1208), and decoder (12011), respectively. The output terminal of the digital-to-analog converter (1202) is electrically connected to the power amplifier (1203), and the output terminal of the power amplifier (1203) is electrically connected to the four transmission channels (1204). The output terminals of the four transmission channels (1204) are respectively connected to the resistors. Impedance matching circuit (1205) and receiving channel (1210); the output of receiving channel (1210) is electrically connected to low noise amplifier (1209), and low noise amplifier (1209) is electrically connected to demodulation circuit (1208); decoder (12011) is electrically connected to four transmitting channels (1204) and four receiving channels (1210) respectively; impedance matching circuit (1205) is electrically connected to TPoS magnetoelectric antenna array (11).

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