Semiconductor chip

By introducing dielectric mirrors and thin contact layers into semiconductor chips, the problems of uneven carrier injection and low light extraction efficiency are solved, achieving more uniform radiative emission and higher light extraction efficiency, and improving the thermal stability of the chip.

CN121058367APending Publication Date: 2025-12-02AMS OSRAM INT GMBH
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Patent Information

Application Number
CN202480029373.3
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Priority Date
2023-05-04
Filing Date
2024-04-24
Publication Date
2025-12-02

AI Technical Summary

Technical Problem

Semiconductor chips suffer from problems such as non-uniform radiation emission due to uneven carrier injection and reduced light extraction efficiency due to the structure of the metal current diffuser.

Method used

The semiconductor chip structure employs a dielectric mirror, which consists of alternating sequences of low-refractive-index and high-reflectivity dielectric layers. Current injection is controlled through an opening configuration. Thin contact layers and graphene or metal contact layers are used to reduce lateral current diffusion. Radiation is reflected through a distributed Bragg reflector to improve light extraction efficiency.

Benefits of technology

This achieves uniformity in carrier injection and radiation output, improves light extraction efficiency, reduces absorption loss within the contact layer, and enhances the chip's thermal stability and optical coupling output.

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Abstract

Described is a semiconductor chip (1) comprising a semiconductor body (2) having a first semiconductor layer (21) of a first conductivity type, a second semiconductor layer (22) of a second conductivity type different from the first conductivity type, and an active region (20) configured for emitting radiation, the active region (20) is arranged between the first semiconductor layer (21) and the second semiconductor layer (22), the first semiconductor layer (21) being electrically connected to a first contact structure (3) comprising at least one first contact finger (31); -at least one first contact finger (31) comprises a contact layer (35) and a current distribution layer (36); -the contact layer (35) is arranged on the first semiconductor layer (21); a dielectric mirror (4) is arranged in a region between the contact layer (35) and the current distribution layer (36); -the dielectric mirror (4) comprises at least one opening (41); and-the current distribution layer (36) extends through the at least one opening (41) and is directly adjacent to the contact layer (35).
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