Full-wave rectification absorption circuit and full-bridge conversion circuit

Abstract

The invention provides a full-wave rectification absorption circuit and a full-bridge conversion circuit, and relates to the technical field of power electronics, and the full-wave rectification absorption circuit comprises a full-wave rectification module composed of switching devices, and a peak absorption module composed of a bleeder resistor, at least one absorption capacitor and at least one absorption diode. The absorption capacitor is connected in parallel with the absorption diode, the absorption capacitor is also connected in series with the bleeder resistor, and the switching device is connected in series between the absorption capacitor and the absorption diode; or the absorption capacitor is connected in parallel with the bleeder resistor, and the absorption capacitor is also connected in series with the switching device and the absorption diode. By adjusting the connection mode of a bleeder resistor, an absorption capacitor and an absorption diode in the peak absorption module, energy stored in the absorption capacitor discharged by the bleeder resistor can be reduced, and energy transmitted from the absorption capacitor to an output capacitor of the full-bridge conversion circuit can be increased. Therefore, the energy utilization rate of the full-wave rectification absorption circuit can be improved.

Description

Technical Field

[0001] This application belongs to the field of power electronics technology, and in particular relates to a full-wave rectifier absorption circuit and a full-bridge converter circuit. Background Technology

[0002] With the continuous development of switching power supplies, full-wave rectification technology is usually used at the output of the full-bridge converter circuit topology, combined with a resistor-capacitor-diode (RCD) snubber circuit, to eliminate voltage spikes caused by the parasitic capacitance and parasitic inductance of the transformer in the full-bridge converter circuit topology.

[0003] In related technologies, such as Figure 1 As shown, transformer T1 will generate parasitic inductance (Lρ2 and Lρ3) and parasitic capacitance (Cρ1), which will cause voltage spikes on Q5 and Q6 when the full-bridge converter circuit topology is working. Therefore, an RCD snubber circuit (D1\C1\R1 and D2\C2\R2) can be added to the output of transformer T1 to suppress the voltage spikes.

[0004] However, the process of absorbing and discharging energy through the RCD absorption circuit results in significant energy loss. Summary of the Invention

[0005] This application provides a full-wave rectifier absorption circuit and a full-bridge converter circuit, which solves the problem of large energy loss in the process of absorbing and discharging energy through the RCD absorption circuit in related technologies.

[0006] To achieve the above objectives, this application adopts the following technical solution:

[0007] In a first aspect, embodiments of this application provide a full-wave rectifier absorption circuit, the full-wave rectifier absorption circuit comprising: a full-wave rectifier module and a spike absorption module;

[0008] The full-wave rectifier module includes: switching devices;

[0009] The peak absorption module includes: a bleed resistor, at least one absorption capacitor, and at least one absorption diode;

[0010] The at least one absorption capacitor is connected in parallel with the at least one absorption diode, and the at least one absorption capacitor is also connected in series with the discharge resistor. The switching device is connected in series between the at least one absorption capacitor and the at least one absorption diode.

[0011] Alternatively, the at least one absorption capacitor is connected in parallel with the discharge resistor, and the at least one absorption capacitor is also connected in series with the switching device and the at least one absorption diode, respectively.

[0012] Optionally, when the at least one absorption capacitor is connected in parallel with the at least one absorption diode, the first end of the absorption diode is connected to the first end of the absorption capacitor, the second end of the absorption diode is connected to the first end of the switching device, and the second end of the absorption capacitor is connected to the second end of the switching device.

[0013] The first terminal of the absorption diode and the first terminal of the absorption capacitor are connected to the first terminal of the discharge resistor.

[0014] Optionally, the at least one absorption capacitor is connected in series, and the first end of each absorption capacitor is connected to the second end of the adjacent absorption capacitor.

[0015] Optionally, when the at least one absorption capacitor is connected in parallel with the discharge resistor, the first end of the absorption capacitor and the first end of the discharge resistor are both connected to the first end of the switching device.

[0016] The second terminal of the absorption capacitor and the second terminal of the discharge resistor are both connected to the second terminal of the absorption diode, and the first terminal of the absorption diode is connected to the second terminal of the switching device.

[0017] Optionally, the at least one absorption diode is connected in series, with the first end of each absorption diode connected to the second end of the adjacent absorption diode.

[0018] Optionally, the first terminal of the absorption diode is the positive terminal, the second terminal of the absorption diode is the negative terminal, the first terminal of the switching device is the input terminal, and the second terminal of the switching device is the output terminal;

[0019] Alternatively, the first terminal of the absorption diode is the negative terminal, the second terminal of the absorption diode is the positive terminal, the first terminal of the switching device is the output terminal, and the second terminal of the switching device is the input terminal.

[0020] Secondly, embodiments of this application provide a full-bridge converter circuit, which includes: an input capacitor, a full-bridge module, a transformer, an output capacitor, and a plurality of full-wave rectification and absorption circuits as described in any of the first aspects;

[0021] The plurality of full-wave rectifier absorption circuits include: a first full-wave rectifier absorption circuit and a second full-wave rectifier absorption circuit;

[0022] The first end of the input capacitor is connected to the first end of the primary-side full-bridge module, and the second end of the input capacitor is connected to the second end of the primary-side full-bridge module.

[0023] The two ends of the primary inductance of the transformer are connected between the third and fourth ends of the primary full-bridge module.

[0024] The transformer includes: a first secondary inductor and a second secondary inductor, the first secondary inductor and the second secondary inductor being connected in series, a first full-wave rectifier absorption circuit being connected to both ends of the first secondary inductor, and a second full-wave rectifier absorption circuit being connected to both ends of the second secondary inductor.

[0025] The output capacitor is connected to the first full-wave rectifier absorption circuit and the second full-wave rectifier absorption circuit.

[0026] Optionally, the second end of the first secondary inductor is connected to the first end of the second secondary inductor;

[0027] When at least one absorption capacitor and at least one absorption diode are connected in parallel in the first full-wave rectifier absorption circuit and the second full-wave rectifier absorption circuit, the second end of the discharge resistor, the second end of the first secondary inductor and the first end of the second secondary inductor are all connected to ground potential.

[0028] When at least one absorption capacitor is connected in parallel with the discharge resistor in the first full-wave rectifier absorption circuit and the second full-wave rectifier absorption circuit, the first end of at least one absorption diode, the second end of the first secondary inductor and the first end of the second secondary inductor are all connected to the ground potential.

[0029] Optionally, the first terminal of the switching device in the first full-wave rectifier absorption circuit is connected to the first terminal of the first secondary inductor;

[0030] The first terminal of the switching device in the second full-wave rectifier absorption circuit is connected to the second terminal of the second secondary inductor.

[0031] Optionally, the second terminal of the switching device in the first full-wave rectifier absorption circuit and the second full-wave rectifier absorption circuit is connected to the first terminal of the output capacitor, and the second terminal of the output capacitor is connected to ground potential.

[0032] This application provides a full-wave rectifier absorption circuit, comprising: a full-wave rectifier module and a spike absorption module. The full-wave rectifier module includes a switching device; the spike absorption module includes: a bleed resistor, at least one absorption capacitor, and at least one absorption diode. The at least one absorption capacitor is connected in parallel with the at least one absorption diode, and the at least one absorption capacitor is also connected in series with the bleed resistor. The switching device is connected in series between the at least one absorption capacitor and the at least one absorption diode; alternatively, the at least one absorption capacitor is connected in parallel with the bleed resistor, and the at least one absorption capacitor is also connected in series with both the switching device and the at least one absorption diode. The technical solution provided in this application, by adjusting the bleed resistor, the at least one absorption capacitor, and the at least one absorption diode in the spike absorption module, can reduce the energy stored in the absorption capacitor by discharging through the bleed resistor and increase the energy transferred from the absorption capacitor to the output capacitor of the full-bridge converter circuit. This reduces the energy consumption of the full-wave rectifier absorption circuit and increases its energy utilization rate. Attached Figure Description

[0033] Figure 1 A schematic diagram of a full-bridge converter circuit topology provided in related technologies;

[0034] Figure 2 This is a circuit structure diagram of a full-bridge converter circuit containing a full-wave rectifier absorption circuit proposed in an embodiment of this application;

[0035] Figure 3 This is a circuit diagram of the full-bridge converter circuit containing another full-wave rectifier absorption circuit proposed in an embodiment of this application;

[0036] Figure 4 This is a circuit diagram of a full-bridge converter circuit containing another full-wave rectifier absorption circuit proposed in an embodiment of this application.

[0037] Figure 5 A schematic diagram of a full-wave rectifier absorption circuit provided in an embodiment of this application;

[0038] Figure 6 A schematic diagram of another full-wave rectifier absorption circuit provided in an embodiment of this application;

[0039] Figure 7 A schematic diagram of another full-wave rectifier absorption circuit provided in the embodiments of this application;

[0040] Figure 8 A schematic diagram of another full-wave rectifier absorption circuit provided in an embodiment of this application;

[0041] Figure 9 A schematic diagram of another full-wave rectifier absorption circuit provided in an embodiment of this application;

[0042] Figure 10A A power consumption simulation waveform diagram without spike voltage absorption is provided for an embodiment of this application;

[0043] Figure 10B A power consumption simulation waveform diagram of conventional spike voltage absorption provided in an embodiment of this application;

[0044] Figure 10C A power consumption simulation waveform diagram of peak voltage absorption through a first peak absorption module is provided in an embodiment of this application;

[0045] Figure 10D This is a power consumption simulation waveform diagram for peak voltage absorption using a second type of peak absorption module, provided as an embodiment of this application. Detailed Implementation

[0046] In the following description, specific details such as particular system architectures and techniques are set forth for illustrative purposes and not for limitation, in order to provide a thorough understanding of the embodiments of this application. However, those skilled in the art will understand that this application can also be implemented in other embodiments without these specific details. In other instances, detailed descriptions of well-known full-bridge converter circuits, full-wave rectifier circuits, and spike absorption circuits are omitted so as not to obscure the description of this application with unnecessary detail.

[0047] The terminology used in the following embodiments is for the purpose of describing particular embodiments only and is not intended to be limiting of this application. As used in the specification and appended claims of this application, the singular expressions “a,” “the,” “the,” and “the” are intended to also include expressions such as “one or more,” unless the context clearly indicates otherwise.

[0048] See Figure 2 , Figure 2 This is a circuit diagram of a full-bridge converter circuit containing a full-wave rectifier absorption circuit proposed in an embodiment of this application. The full-bridge converter circuit may include: an input capacitor Cin, a full-bridge module 210, a transformer T1, an output capacitor Co, and multiple full-wave rectifier absorption circuits 220.

[0049] The full-bridge module 210 may include a first switch Q1, a second switch Q2, a third switch Q3, and a fourth switch Q4. The first switch Q1 and the second switch Q2 are connected in series, and then connected in parallel with the third switch Q3 and the fourth switch Q4, which are also connected in series.

[0050] Furthermore, the multiple full-wave rectifier absorption circuits 220 may include: a first full-wave rectifier absorption circuit 221 and a second full-wave rectifier absorption circuit 222. Further, each full-wave rectifier absorption circuit 220 may include: a full-wave rectifier module 2201 and a spike absorption module 2202.

[0051] The full-wave rectifier module 2201 may include a switching device Q. The spike absorption module 2202 may include a bleed resistor R, at least one absorption capacitor C, and at least one absorption diode D. For example, as... Figure 3 As shown, Figure 3 The circuit diagram shown is for another full-bridge converter circuit containing a full-wave rectifier absorption circuit proposed in this application embodiment. The first full-wave rectifier absorption circuit 221 may include: a switching device Q5, a bleeder resistor R1, an absorption capacitor C1, an absorption capacitor C3, and an absorption diode D1. The second full-wave rectifier absorption circuit 222 may include: a switching device Q6, a bleeder resistor R2, an absorption capacitor C2, an absorption capacitor C4, and an absorption diode D2.

[0052] In addition, the first end of the input capacitor Cin can be connected to the first end of the primary-side full-bridge module 210 (the first end of the first switch Q1 and the first end of the third switch Q3), and the second end of the input capacitor Cin can be connected to the second end of the primary-side full-bridge module 210 (the second end of the second switch Q2 and the second end of the fourth switch Q4).

[0053] Furthermore, the two ends of the primary inductance N1 of transformer T1 are connected between the third end (the second end of the first switch Q1 and the first end of the second switch Q2) and the fourth end (the second end of the third switch Q3 and the first end of the fourth switch Q4) of the primary full-bridge module 210.

[0054] Among them, such as Figure 3 As shown, after the primary-side inductor N1 is connected to the primary-side full-bridge module 210, parasitic inductance Lρ1 and parasitic capacitance Cr1 are generated.

[0055] Similarly, transformer T1 may also include a first secondary inductor N2 and a second secondary inductor N3. The first secondary inductor N2 and the second secondary inductor N3 are connected in series. For example, the second terminal of the first secondary inductor N2 can be connected to the first terminal of the second secondary inductor N3.

[0056] Furthermore, the first full-wave rectifier absorption circuit 221 is connected to both ends of the first secondary inductor N2, and the second full-wave rectifier absorption circuit 222 is connected to both ends of the second secondary inductor N3.

[0057] Specifically, in the first full-wave rectifier absorption circuit 221, the first terminal of the switching device Q5 can be connected to the first terminal of the first secondary inductor N2, and in the second full-wave rectifier absorption circuit 222, the first terminal of the switching device Q6 can be connected to the second terminal of the second secondary inductor N3.

[0058] Additionally, the output capacitor Co can be connected to the first full-wave rectifier absorption circuit 221 and the second full-wave rectifier absorption circuit 222. For example, the second terminal of the switching device Q in the first full-wave rectifier absorption circuit 221 and the second full-wave rectifier absorption circuit 222 can be connected to the first terminal of the output capacitor Co, and the second terminal of the output capacitor Co is connected to ground potential (GND).

[0059] It should be noted that, in this embodiment of the application, the full-bridge module 210 is described using a full-bridge structure consisting of four bridge arms as an example. However, in actual applications, the full-bridge module 210 can also be a three-phase bridge structure. This embodiment of the application does not specifically limit the specific circuit structure of the full-bridge module 210.

[0060] It should also be noted that in practical applications, the various circuit components included in the full-wave rectifier absorption circuit 220 can be connected in various ways. Correspondingly, based on different connection methods, the full-wave rectifier absorption circuit 220 can also be connected to the transformer T1 in different ways.

[0061] Method 1

[0062] like Figure 3 As shown, when at least one absorption capacitor R1 and at least one absorption diode D are connected in parallel in the first full-wave rectifier absorption circuit 221 and the second full-wave rectifier absorption circuit 222, the second end of the discharge resistor R1, the second end of the first secondary inductor N2 and the first end of the second secondary inductor N3 can all be connected to ground potential.

[0063] Correspondingly, after the second end of the bleed resistor R1, the second end of the first secondary inductor N2, and the first end of the second secondary inductor N3 are connected, parasitic inductances Lρ2 and Lρ3, as well as parasitic capacitance Cρ1, are generated.

[0064] Specifically, when the first switch Q1 and the fourth switch Q4 in the primary-side full-bridge module 210 of transformer T1 are turned on, the first secondary-side inductor N2 of transformer T1 will output energy. At this time, the switching device Q5 in the first full-wave rectifier absorption circuit 221 is turned on and charges the output capacitor Co. At the same time, the first secondary-side inductor N2, the second secondary-side inductor N3, the parasitic inductor Lρ2, the parasitic inductor Lρ3 and the parasitic capacitor Cρ1 will form a resonant circuit. Finally, the voltage of the second secondary-side inductor N3, the resonant voltage of the parasitic inductor Lρ3 and the voltage Vco across the output capacitor Co are added together and equal to the voltage across the switching device Q6 in the second full-wave rectifier absorption circuit 222.

[0065] Similarly, when the second switch Q2 and the third switch Q3 in the full-bridge module 210 are turned on, a spike voltage will be generated across the switching device Q5 in the first full-wave rectifier absorption circuit 221, just as when the first switch Q1 and the fourth switch Q4 are turned on.

[0066] Correspondingly, the peak voltage can be absorbed by the full-wave rectifier absorption circuit 220. When the first switch Q1 and the fourth switch Q4 in the primary full-bridge module 210 of transformer T1 are in the positive half-cycle, the resonant energy generated by the parasitic inductance Lρ2 and parasitic inductance Lρ3 will be stored through the loop formed by the second secondary inductance N3, the first secondary inductance N2, the absorption capacitor C4, the absorption capacitor C2 and the absorption diode D2. After the peak voltage, the energy absorbed by the absorption capacitors C4 and C2 is consumed by the output capacitor Co on the discharge resistor R2. In this process, nearly half of the energy will be stored in the output capacitor Co. At this time, the peak voltage of the switching device Q6 is clamped by the output capacitor Co, the absorption capacitor C1 and the absorption capacitor C3 and will not be too high.

[0067] Similarly, when the primary-side full-bridge module 210 of transformer T1 is operating in the negative half-cycle, the absorption process of the resonant energy generated by parasitic inductances Lρ2 and Lρ3 is similar to the process described above. Therefore, the peak voltage of switching device Q5 is clamped by output capacitor Co, absorption capacitor C2 and absorption capacitor C4 and will not be too high.

[0068] Therefore, in the process of calculating the energy consumption of the peak absorption module 2202, the resonant peak energy generated by the parasitic inductors Lρ2 and Lρ3 is first stored in the absorption capacitors C1, C2, C3, and C4. Then, half of the energy is released into the output capacitor Co for storage, and the remaining energy is consumed in the bleeder resistors R1 and R2. Throughout the process, the plateau voltage of the bleeder resistor R is close to the voltage Vco across the output capacitor Co. Compared with traditional absorption, the voltage plateau is reduced by half. Therefore, if U 2 / R performs calculations, reducing power consumption to 1 / 4 of the original.

[0069] Method 2

[0070] like Figure 4 As shown, Figure 4 This is a circuit diagram of a full-bridge converter circuit containing another full-wave rectifier absorption circuit proposed in an embodiment of this application. When at least one absorption capacitor C1 and a discharge resistor R1 are connected in parallel in the first full-wave rectifier absorption circuit 221 and the second full-wave rectifier absorption circuit 222, the first end of at least one absorption diode D1, the second end of the first secondary inductor N2, and the first end of the second secondary inductor N3 are all connected to ground potential.

[0071] Correspondingly, after the second end of the bleed resistor R1, the second end of the first secondary inductor N2, and the first end of the second secondary inductor N3 are connected, parasitic inductances Lρ2 and Lρ3, as well as parasitic capacitance Cρ1, are generated.

[0072] Specifically, when the first switch Q1 and the fourth switch Q4 in the primary-side full-bridge module 210 of transformer T1 are turned on, the first secondary-side inductor N2 of transformer T1 will output energy. At this time, the switching device Q5 in the first full-wave rectifier absorption circuit 221 is turned on and charges the output capacitor Co. At the same time, the first secondary-side inductor N2, the second secondary-side inductor N3, the parasitic inductor Lρ2, the parasitic inductor Lρ3 and the parasitic capacitor Cρ1 will form a resonant circuit. Finally, the voltage of the second secondary-side inductor N3, the resonant voltage of the parasitic inductor Lρ3 and the voltage Vco across the output capacitor Co are added together and equal to the voltage across the switching device Q6 in the second full-wave rectifier absorption circuit 222.

[0073] Similarly, when the second switch Q2 and the third switch Q3 in the full-bridge module 210 are turned on, a spike voltage will be generated across the switching device Q5 in the first full-wave rectifier absorption circuit 221, just as when the first switch Q1 and the fourth switch Q4 are turned on.

[0074] Correspondingly, the peak voltage can be absorbed by the full-wave rectifier absorption circuit 220. When the first switch Q1 and the fourth switch Q4 in the primary-side full-bridge module 210 of transformer T1 are in the positive half-cycle, the resonant energy generated by the parasitic inductances Lρ2 and Lρ3 will be stored through the loop formed by the second secondary inductance N3, the first secondary inductance N2, the absorption diode D2, the absorption diode D4, and the absorption capacitor C2. At the same time, the energy will be stored in the output capacitor Co through the first secondary inductance N2 in the form of induced current, while the energy absorbed by the absorption capacitor C2 will be consumed in the discharge resistor R2. At this time, the peak voltage of the switching device Q6 is clamped by the output capacitor Co and the absorption capacitor C2 and will not be too high.

[0075] Similarly, when the primary-side full-bridge module 210 of transformer T1 is operating in the negative half-cycle, the absorption process of the resonant energy generated by parasitic inductances Lρ2 and Lρ3 is similar to the process described above. Therefore, the peak voltage of switching device Q5 is clamped by the output capacitor Co and the absorption capacitor C1 and will not be too high.

[0076] Therefore, in the process of calculating the energy consumption of the peak absorption module 2202, the resonant peak energy generated by the parasitic inductances Lρ2 and Lρ3 is first stored in the absorption capacitors C1 and C2. At the same time, an equal amount of energy is stored in the output capacitor Co through the induction coil. Then, the energy in the absorption capacitors C1 and C2 is consumed in the discharge resistors R1 and R2. Throughout the process, the plateau voltage of the discharge resistors R1 and R2 is close to the voltage Vco across the output capacitor Co. Compared with traditional absorption, the voltage plateau is reduced by half. Therefore, if calculated according to U2 / R, the power consumption is reduced to 1 / 4 of the original.

[0077] The following is a detailed description of the full-wave rectifier absorption circuit in the above-mentioned full-bridge converter circuit.

[0078] Figure 5 A schematic diagram of a full-wave rectifier absorption circuit provided in an embodiment of this application is shown below. Figure 5 The full-wave rectifier absorption circuit includes a full-wave rectifier module 310 and a spike absorption module 320.

[0079] The full-wave rectifier module 310 may include a switching device 311.

[0080] Furthermore, the spike absorption module 320 may include: a bleed resistor 321, at least one absorption capacitor 322, and at least one absorption diode 323.

[0081] Accordingly, the bleeder resistor 321, the absorption capacitor 322, and the absorption diode 323 can be connected in different ways to obtain different spike absorption modules 320.

[0082] Specifically, at least one absorption capacitor 322 can be connected in parallel with at least one absorption diode 323, and at least one absorption capacitor 322 can also be connected in series with a discharge resistor 321, while a switching device 311 can be connected in series between at least one absorption capacitor 322 and at least one absorption diode 323.

[0083] Alternatively, at least one absorption capacitor 322 may be connected in parallel with the discharge resistor 321, and at least one absorption capacitor 322 may also be connected in series with the switching device 311 and at least one absorption diode 323 respectively.

[0084] Therefore, two different peak absorption modules 320 can be obtained in the above manner. Each peak absorption module 320 will be described in detail below.

[0085] The first type of peak absorption module

[0086] See Figure 5In the first type of peak absorption module, at least one absorption capacitor 322 may be connected in parallel with at least one absorption diode 323.

[0087] Correspondingly, the first terminal of the absorption diode 323 can be connected to the first terminal of the absorption capacitor 322, the second terminal of the absorption diode 323 can be connected to the first terminal of the switching device 311, and the second terminal of the absorption capacitor 322 can be connected to the second terminal of the switching device 311.

[0088] Furthermore, the first terminal of the absorption diode 323 and the first terminal of the absorption capacitor 322 can be connected to the first terminal of the discharge resistor 321.

[0089] Furthermore, at least one absorption capacitor 322 is connected in series, and the first end of each absorption capacitor 322 can be connected to the second end of the adjacent absorption capacitor 322.

[0090] The second type of peak absorption module

[0091] Figure 6 A schematic diagram of another full-wave rectifier absorption circuit provided in this application embodiment is shown below. Figure 6 In the second type of peak absorption module, at least one absorption capacitor 322 is connected in parallel with a discharge resistor 321.

[0092] Correspondingly, the first end of the absorption capacitor 322 and the first end of the discharge resistor 321 can both be connected to the first end of the switching device 311, the second end of the absorption capacitor 322 and the second end of the discharge resistor 321 can both be connected to the second end of the absorption diode 323, and the first end of the absorption diode 323 can be connected to the second end of the switching device 311.

[0093] Furthermore, at least one absorption diode 323 can be connected in series, and the first end of each absorption diode 323 can be connected to the second end of the adjacent absorption diode 323.

[0094] Furthermore, in practical applications, the positions of the switching device 311 and multiple absorption diodes 323 can be interchanged to obtain full-wave rectifier absorption circuits with different circuit structures.

[0095] For example, see Figure 7 , Figure 7 This is a schematic diagram of another full-wave rectifier absorption circuit provided in the embodiments of this application. The first end of the absorption capacitor 322 and the first end of the discharge resistor 321 can be connected to the first end of the absorption diode 323. The second end of the absorption capacitor 322 and the second end of the discharge resistor 321 can be connected to the second end of the switching device 311. The first end of the switching device 311 can be connected to the second end of the absorption diode 323.

[0096] It should be noted that, as Figures 3 to 6 As shown, in the first type of peak absorption module and the second type of peak absorption module, the first terminal of the absorption diode 323 can be the positive terminal, the second terminal of the absorption diode 323 can be the negative terminal, the first terminal of the switching device 311 can be the input terminal, and the second terminal of the switching device 311 can be the output terminal.

[0097] In practical applications, the first and second terminals of the absorption diode 323 and the switching device 311 can also be changed, see [reference needed]. Figure 8 and Figure 9 , Figure 8 and Figure 9 All of these are schematic diagrams of another full-wave rectifier absorption circuit provided in the embodiments of this application. The first end of the absorption diode 323 can be the negative terminal, and the second end of the absorption diode 323 can be the positive terminal. The first end of the switching device 311 can be the output terminal, and the second end of the switching device 311 can be the input terminal. The embodiments of this application do not specifically limit the first and second ends of the absorption diode 323 and the switching device 311.

[0098] See Figures 10A to 10D , Figure 10A This application provides a simulated power consumption waveform diagram without spike voltage absorption, as shown in the embodiment of the present application. Figure 10B This application provides a simulated power consumption waveform diagram for a conventional spike voltage absorption method, as shown in the embodiments of this application. Figure 10C This application provides a power consumption simulation waveform diagram for peak voltage absorption using a first peak absorption module, as shown in the embodiment of the present application. Figure 10D This is a power consumption simulation waveform diagram for peak voltage absorption using a second type of peak absorption module, provided as an embodiment of this application.

[0099] in, Figures 10A to 10D The upper half of the figure represents the peak voltage (VQ) corresponding to the switching device 311, the voltage across the bleeder resistor 321 (VR), and the voltage across the absorption capacitor 322 (VC), while the lower half represents the power (PR) corresponding to the absorption capacitor 322.

[0100] like Figures 10A to 10D As shown, under the same operating conditions, the peak voltage without peak voltage absorption can reach up to 1290V. However, when using conventional peak voltage absorption, the power consumption of the bleeder resistor 321 reaches 1.8 watts (W). After using the first peak absorption module or the second peak absorption module provided in this application embodiment to absorb the peak voltage, the power consumption of the bleeder resistor 321 is only 1W. Compared with the traditional solution, the power consumption of the bleeder resistor 321 is reduced by 44.4%.

[0101] In summary, the full-wave rectifier absorption circuit provided in this application includes a full-wave rectifier module and a spike absorption module. The full-wave rectifier module includes a switching device; the spike absorption module includes a bleed resistor, at least one absorption capacitor, and at least one absorption diode. The at least one absorption capacitor is connected in parallel with the at least one absorption diode, and the at least one absorption capacitor is also connected in series with the bleed resistor. The switching device is connected in series between the at least one absorption capacitor and the at least one absorption diode; alternatively, the at least one absorption capacitor is connected in parallel with the bleed resistor, and the at least one absorption capacitor is also connected in series with both the switching device and the at least one absorption diode. The technical solution provided in this application, by adjusting the bleed resistor, the at least one absorption capacitor, and the at least one absorption diode in the spike absorption module, can reduce the energy stored in the absorption capacitor by discharging through the bleed resistor and increase the energy transferred from the absorption capacitor to the output capacitor of the full-bridge converter circuit. This reduces the energy consumption of the full-wave rectifier absorption circuit and increases its energy utilization rate.

[0102] In the above embodiments, the descriptions of each embodiment have different focuses. For parts that are not described in detail or recorded in a certain embodiment, please refer to the relevant descriptions of other embodiments.

[0103] Those skilled in the art will recognize that the units and algorithm steps of the various examples described in conjunction with the embodiments disclosed herein can be implemented in electronic hardware, or a combination of computer software and electronic hardware. Whether these functions are implemented in hardware or software depends on the specific application and design constraints of the technical solution. Those skilled in the art can use different methods to implement the described functions for each specific application, but such implementation should not be considered beyond the scope of this application.

[0104] In the embodiments provided in this application, it should be understood that the disclosed apparatus / devices and methods can be implemented in other ways. For example, the apparatus / device embodiments described above are merely illustrative. For instance, the division of modules or units is only a logical functional division, and in actual implementation, there may be other division methods. For example, multiple units or components may be combined or integrated into another system, or some features may be ignored or not executed. Furthermore, the coupling or direct coupling or communication connection shown or discussed may be through some interfaces; the indirect coupling or communication connection between apparatuses or units may be electrical, mechanical, or other forms.

[0105] It should be understood that, when used in this application specification and the appended claims, the term "comprising" indicates the presence of the described features, integrals, steps, operations, elements and / or components, but does not exclude the presence or addition of one or more other features, integrals, steps, operations, elements, components and / or a collection thereof.

[0106] It should also be understood that the term “and / or” as used in this application specification and the appended claims means any combination of one or more of the associated listed items and all possible combinations, and includes such combinations.

[0107] As used in this application specification and the appended claims, the term "if" may be interpreted, depending on the context, as "when," "once," "in response to determination," or "in response to detection." Similarly, the phrase "if determined" or "if detected [the described condition or event]" may be interpreted, depending on the context, as meaning "once determined," "in response to determination," "once detected [the described condition or event]," or "in response to detection [the described condition or event]."

[0108] Furthermore, in the description of this application and the appended claims, the terms "first," "second," "third," etc., are used only to distinguish descriptions and should not be construed as indicating or implying relative importance.

[0109] References to "one embodiment" or "some embodiments" as described in this specification mean that one or more embodiments of this application include a specific feature, structure, or characteristic described in connection with that embodiment. Therefore, the phrases "in one embodiment," "in some embodiments," "in other embodiments," "in still other embodiments," etc., appearing in different parts of this specification do not necessarily refer to the same embodiment, but rather mean "one or more, but not all, embodiments," unless otherwise specifically emphasized. The terms "comprising," "including," "having," and variations thereof mean "including but not limited to," unless otherwise specifically emphasized.

[0110] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this application.

Claims

1. A full-wave rectifier absorption circuit, characterized in that, The full-wave rectifier absorption circuit includes: a full-wave rectifier module and a spike absorption module; The full-wave rectifier module includes: switching devices; The peak absorption module includes: a bleed resistor, at least one absorption capacitor, and at least one absorption diode; The at least one absorption capacitor is connected in parallel with the at least one absorption diode, and the at least one absorption capacitor is also connected in series with the discharge resistor. The switching device is connected in series between the at least one absorption capacitor and the at least one absorption diode. Alternatively, the at least one absorption capacitor is connected in parallel with the discharge resistor, and the at least one absorption capacitor is also connected in series with the switching device and the at least one absorption diode, respectively.

2. The full-wave rectifier absorption circuit according to claim 1, characterized in that, When the at least one absorption capacitor and the at least one absorption diode are connected in parallel, the first end of the absorption diode is connected to the first end of the absorption capacitor, the second end of the absorption diode is connected to the first end of the switching device, and the second end of the absorption capacitor is connected to the second end of the switching device. The first terminal of the absorption diode and the first terminal of the absorption capacitor are connected to the first terminal of the discharge resistor.

3. The full-wave rectifier absorption circuit according to claim 2, characterized in that, The at least one absorption capacitor is connected in series, and the first end of each absorption capacitor is connected to the second end of the adjacent absorption capacitor.

4. The full-wave rectifier absorption circuit according to claim 1, characterized in that, When the at least one absorption capacitor is connected in parallel with the discharge resistor, the first end of the absorption capacitor and the first end of the discharge resistor are both connected to the first end of the switching device. The second terminal of the absorption capacitor and the second terminal of the discharge resistor are both connected to the second terminal of the absorption diode, and the first terminal of the absorption diode is connected to the second terminal of the switching device.

5. The full-wave rectifier absorption circuit according to claim 4, characterized in that, The at least one absorption diode is connected in series, and the first end of each absorption diode is connected to the second end of the adjacent absorption diode.

6. The full-wave rectifier absorption circuit according to any one of claims 1 to 5, characterized in that, The first terminal of the absorption diode is the positive terminal, the second terminal of the absorption diode is the negative terminal, the first terminal of the switching device is the input terminal, and the second terminal of the switching device is the output terminal; Alternatively, the first terminal of the absorption diode is the negative terminal, the second terminal of the absorption diode is the positive terminal, the first terminal of the switching device is the output terminal, and the second terminal of the switching device is the input terminal.

7. A full-bridge converter circuit, characterized in that, The full-bridge converter circuit includes: an input capacitor, a full-bridge module, a transformer, an output capacitor, and multiple full-wave rectification and absorption circuits as described in any one of claims 1 to 6; The plurality of full-wave rectifier absorption circuits include: a first full-wave rectifier absorption circuit and a second full-wave rectifier absorption circuit; The first end of the input capacitor is connected to the first end of the primary-side full-bridge module, and the second end of the input capacitor is connected to the second end of the primary-side full-bridge module. The two ends of the primary inductance of the transformer are connected between the third and fourth ends of the primary full-bridge module. The transformer includes: a first secondary inductor and a second secondary inductor, the first secondary inductor and the second secondary inductor being connected in series, a first full-wave rectifier absorption circuit being connected to both ends of the first secondary inductor, and a second full-wave rectifier absorption circuit being connected to both ends of the second secondary inductor. The output capacitor is connected to the first full-wave rectifier absorption circuit and the second full-wave rectifier absorption circuit.

8. The full-bridge converter circuit according to claim 7, characterized in that, The second end of the first secondary inductor is connected to the first end of the second secondary inductor; When at least one absorption capacitor and at least one absorption diode are connected in parallel in the first full-wave rectifier absorption circuit and the second full-wave rectifier absorption circuit, the second end of the discharge resistor, the second end of the first secondary inductor and the first end of the second secondary inductor are all connected to ground potential. When at least one absorption capacitor is connected in parallel with the discharge resistor in the first full-wave rectifier absorption circuit and the second full-wave rectifier absorption circuit, the first end of at least one absorption diode, the second end of the first secondary inductor and the first end of the second secondary inductor are all connected to the ground potential.

9. The full-bridge converter circuit according to claim 7, characterized in that, The first terminal of the switching device in the first full-wave rectifier absorption circuit is connected to the first terminal of the first secondary inductor. The first terminal of the switching device in the second full-wave rectifier absorption circuit is connected to the second terminal of the second secondary inductor.

10. The full-bridge converter circuit according to any one of claims 7 to 9, characterized in that, In the first full-wave rectifier absorption circuit and the second full-wave rectifier absorption circuit, the second terminal of the switching device is connected to the first terminal of the output capacitor, and the second terminal of the output capacitor is connected to ground potential.

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