Solar cell and photovoltaic module

By forming two passivation layers on the uncut surface of the crystalline silicon solar cell and depositing a third passivation layer around both sides of the cut surface, a three-layer stacked passivation film structure is formed, which solves the hydrogen leakage problem caused by the heat treatment of the passivation film and improves the stability of the passivation of the cut surface and the performance of the cell.

CN121126970APending Publication Date: 2025-12-12CHINT NEW ENERGY TECH CO LTD
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Patent Information

Application Number
CN202510399132.4
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Priority Date
2024-11-29
Filing Date
2025-03-28
Publication Date
2025-12-12

AI Technical Summary

Technical Problem

In the existing technology, during the cutting process of crystalline silicon cells, the heat treatment of the passivation film layer causes hydrogen leakage, which affects the passivation stability. In particular, the hydrogen leakage is severe at the junction of the passivation film layer side edges where the cutting surface and the non-cutting surface meet.

Method used

After forming two passivation layers on the non-cut surface of the battery cell, a third passivation layer is deposited around the non-cut surface on both sides of the cut surface. The third passivation layer is deposited around the outside of the two passivation layers on the non-cut surface, forming a three-layer stacked passivation film structure. The proportion of the plating width on the non-cut surface is controlled to prevent hydrogen leakage.

Benefits of technology

It improves the stability of passivation of the cut surface, reduces hydrogen leakage during the passivation process, and enhances battery performance.

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Abstract

The invention discloses a solar cell and a photovoltaic module, and belongs to the technical field of photovoltaics. A cutting surface is formed on at least one side surface of the battery piece, and the side surfaces of the battery piece except the cutting surface are non-cutting surfaces; the non-cutting surface is provided with a first passivation layer and a second passivation layer which are sequentially arranged in the direction away from the non-cutting surface, the second passivation layer is a hydrogen passivation layer, and the first passivation layer and the second passivation layer do not cover the cutting surface; the cutting surface is provided with a third passivation layer; the third passivation layer is plated around a non-cutting surface adjacent to the cutting surface and covers part of the second passivation layer; and the ratio of the winding plating length of the third passivation layer to the overall length of the non-cutting surface subjected to winding plating is 1 / 60-1 / 8 and comprises values at the two ends. The three-layer laminated passivation film layer structure is formed in the side edge winding plating area, and the laminated passivation film layer structure is beneficial to preventing hydrogen from overflowing, so that the passivation stability of the cutting surface is improved.
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Description

[0001] This application claims priority to Chinese Patent Application No. 202411746359.3, filed on November 29, 2024, entitled "A Solar Cell and a Method for Preparing a Solar Cell", the entire contents of which are incorporated herein by reference. Technical Field

[0002] This application relates to the field of photovoltaic technology, and in particular to a solar cell and a photovoltaic module. Background Technology

[0003] As the mainstream technology in the photovoltaic market, crystalline silicon solar cells involve cutting half or multiple cells during their production. This cutting process generates numerous defects and dangling bonds at the edges, causing severe surface damage and leading to a decline in cell performance. Therefore, developing an effective passivation technology for the cut surfaces to mitigate cutting losses is crucial for improving the overall performance of the cells.

[0004] In recent years, researchers have developed a technique for passivating cut surfaces using passivation dielectric films. However, these techniques suffer from stability issues when applied to cut surface passivation. This stability is primarily related to the heat treatment process during passivation film preparation, which can lead to hydrogen leakage from the passivation film, resulting in poor passivation stability. Furthermore, in existing technologies, a passivation film is typically formed on the non-cut surface before cutting the solar cell; after cutting, another passivation film is formed on the cut surface. At the junction of the cut and non-cut surfaces, the two passivation film layers intersect at their edges, making hydrogen more likely to leak out and severely impacting passivation stability. Summary of the Invention

[0005] The purpose of this application is to provide a solar cell and photovoltaic module that improves the stability of passivation of the cut surface.

[0006] To achieve the above objectives, this application provides a solar cell, comprising: a solar cell; wherein at least one side of the solar cell has a cut surface, and the other side of the solar cell is a non-cut surface;

[0007] The non-cut surface is provided with a first passivation layer and a second passivation layer arranged sequentially in a direction away from the non-cut surface. The second passivation layer is a hydrogen passivation layer, and the first passivation layer and the second passivation layer do not cover the cut surface. The cut surface is provided with a third passivation layer. The third passivation layer is plated around the non-cut surface adjacent to the cut surface and covers part of the second passivation layer. The ratio of the length of the third passivation layer to the overall length of the non-cut surface to which it is plated is 1 / 60 to 1 / 8, including the values ​​at both ends.

[0008] Optionally, the length of the third passivation layer is 2mm-10mm, including the values ​​at both ends.

[0009] Optionally, the ratio of the thickness of the second passivation layer to the total thickness of the first passivation layer, the second passivation layer, and the third passivation layer is 1 / 3 to 5 / 6, including the values ​​at both ends.

[0010] Optionally, the thickness of the second passivation layer is 50nm-100nm, including the values ​​at both ends.

[0011] Optionally, the thickness of the first passivation layer is 5nm-100nm, including the values ​​at both ends;

[0012] And / or, the thickness of the third passivation layer is 5nm-100nm, including the values ​​at both ends.

[0013] Optionally, the first passivation layer is a non-hydrogen passivation layer; the non-hydrogen passivation layer is a hydrogen-poor SiO2 layer or a hydrogen-poor AlO2 layer. x The layer, a hydrogen-poor gallium oxide layer, or a hydrogen-poor zirconium oxide layer.

[0014] Optionally, the hydrogen passivation layer is hydrogen-rich AlO₂. x Layer, hydrogen-rich SIN x Layer, hydrogen-rich SiO x Layer, hydrogen-rich silicon oxynitride, hydrogen-rich SiO x N y or hydrogen-rich AlN x Any of the layers.

[0015] Optionally, the third passivation layer is a non-hydrogen passivation layer; the non-hydrogen passivation layer is a SiO2 layer or an AlO2 layer. x Any one of the following: a layer, a gallium oxide layer, or a zirconium oxide layer.

[0016] Optionally, the cutting surface includes a laser cutting surface and a stress cutting surface; in the length direction of the cutting surface, the laser cutting surface is located at both ends of the cutting surface, and the stress cutting surface is located between the two laser cutting surfaces; the thickness of the third passivation layer located on the laser cutting surface is greater than the thickness of the third passivation layer located on the stress cutting surface; the thickness difference between the third passivation layer located on the laser cutting surface and the third passivation layer located on the stress cutting surface is greater than 10 nm.

[0017] Optionally, the cut surface includes a fourth passivation layer covering the third passivation layer, the fourth passivation layer being a hydrogen passivation layer, and the fourth passivation layer being coated around the third passivation layer on the non-cut surface.

[0018] Optionally, the fixed charge density of the third passivation layer is greater than the fixed charge density of the fourth passivation layer.

[0019] Optionally, the battery cell has solder joints in the area near the edge of the third passivation layer but not covered by the third passivation layer;

[0020] The battery cell has a plurality of solder joints on at least one side surface; the solder joints are arranged sequentially along a direction perpendicular to the cut surface; along the direction perpendicular to the cut surface, the distance between adjacent solder joints on the side closer to the cut surface is less than the distance between adjacent solder joints on the side at least partially away from the cut surface.

[0021] To achieve the above objectives, this application also provides a photovoltaic module, including the aforementioned solar cell.

[0022] This application provides a solar cell, comprising: a solar cell; at least one side of the solar cell has a cut surface, and the other side of the solar cell is a non-cut surface; the non-cut surface is provided with a first passivation layer and a second passivation layer disposed sequentially in a direction away from the non-cut surface, the second passivation layer being a hydrogen passivation layer, and the first passivation layer and the second passivation layer not covering the cut surface; the cut surface is provided with a third passivation layer; the third passivation layer is deposited around the non-cut surface adjacent to the cut surface and partially covers the second passivation layer; the ratio of the length of the third passivation layer to the overall length of the non-cut surface to which it is deposited is 1 / 60 to 1 / 8, including the values ​​at both ends. Obviously, this application, after forming two passivation layers on the non-cut surface of the solar cell, performs a third passivation layer coating around the non-cut surfaces on both sides of the cut surface. This third passivation layer covers the two passivation layers on the non-cut surface, and the coating width is controlled to represent a portion of the non-cut surface, forming a three-layer stacked passivation film structure in the side coating area. This stacked passivation film structure helps prevent hydrogen leakage, thereby improving the stability of the passivation on the cut surface. This application also provides a photovoltaic module with the aforementioned beneficial effects. Attached Figure Description

[0023] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of this application. For those skilled in the art, other drawings can be obtained based on the provided drawings without creative effort.

[0024] Figure 1 This is a schematic diagram of the structure of a solar cell provided in an embodiment of this application;

[0025] Figure 2A-A' cross-sectional view of a solar cell provided in an embodiment of this application;

[0026] Figure 3 A-B' cross-sectional view of a solar cell provided in an embodiment of this application;

[0027] Figure 4 A flowchart illustrating a method for fabricating a solar cell, as provided in this application embodiment;

[0028] Figure 5 This is a trend diagram showing the change of side passivation before and after side passivation, provided in an embodiment of this application.

[0029] The annotations in the attached figures are explained as follows:

[0030] 1-Battery cell; 21-First passivation layer; 22-Second passivation layer; 23-Third passivation layer. Detailed Implementation

[0031] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0032] Please refer to Figures 1 to 3 , Figure 1 This is a schematic diagram of the structure of a solar cell provided in an embodiment of this application; Figure 2 A-A' cross-sectional view of a solar cell provided in an embodiment of this application; Figure 3 This is a cross-sectional view along line A-B' of a solar cell provided in an embodiment of this application. The solar cell provided in this application may include: a solar cell 1; at least one side of the solar cell 1 has a cut surface formed therein, and the other sides of the solar cell 1 are non-cut surfaces.

[0033] The non-cut surface is provided with a first passivation layer 21 and a second passivation layer 22 arranged sequentially in a direction away from the non-cut surface. The second passivation layer 22 is a hydrogen passivation layer, and the first passivation layer 21 and the second passivation layer 22 do not cover the cut surface. The cut surface is provided with a third passivation layer 23. The third passivation layer 23 is plated around to the non-cut surface adjacent to the cut surface and covers part of the second passivation layer 22. The ratio of the length of the third passivation layer 23 to the overall length of the non-cut surface to which it is plated is 1 / 60 to 1 / 8, including the values ​​at both ends.

[0034] It should be noted that a hydrogen passivation layer refers to a film layer that relies on hydrogen atoms for passivation, while a non-hydrogen passivation layer refers to a film layer that does not rely on hydrogen atoms for passivation.

[0035] It should be noted that in this embodiment, the third passivation layer 23 covers both the cut surface and a portion of the second passivation layer 22 on the non-cut surface adjacent to the cut surface. Moreover, in this embodiment, both sides of the cut surface are connected to the non-cut surface, so the non-cut surfaces on both opposite sides of the battery cell 1 are coated with the third passivation layer 23.

[0036] This embodiment does not limit the specific type of solar cell 1. Solar cell 1 can be, but is not limited to, a crystalline silicon solar cell. This embodiment does not limit the specific number of cut surfaces. The specific number of cut surfaces can be determined according to the actual cutting method. For example, when solar cell 1 is obtained by one cut, one side of solar cell 1 can have a cut surface, and the other three sides of solar cell 1 are non-cut surfaces. When solar cell 1 is obtained by two cuts, the opposite two sides of solar cell 1 can each have a cut surface, and the opposite two sides of solar cell 1 are non-cut surfaces.

[0037] It should be noted that in this embodiment, the non-cut surface adopts a stacked passivation film structure composed of a first passivation layer and a second passivation layer, which can achieve a better passivation effect.

[0038] This embodiment does not limit the specific type of the first passivation layer 21. For example, the first passivation layer 21 can be a non-hydrogen passivation layer; the non-hydrogen passivation layer can be a hydrogen-poor SiO2 layer or a hydrogen-poor AlO2 layer. x The first passivation layer 21 can be any one of a hydrogen-poor gallium oxide layer or a hydrogen-poor zirconium oxide layer. It should be noted that hydrogen-poor refers to a layer containing a low concentration of hydrogen atoms, while hydrogen-rich refers to a layer containing a high concentration of hydrogen atoms. This embodiment does not limit the specific thickness of the first passivation layer 21; for example, the thickness of the first passivation layer 21 can be 5 nm to 100 nm, including the values ​​at both ends.

[0039] This embodiment does not limit the specific type of the second passivation layer 22, i.e., the hydrogen passivation layer. For example, the hydrogen passivation layer can be hydrogen-rich AlO. x Layer, hydrogen-rich SIN x Layer, hydrogen-rich SiO x Layer, hydrogen-rich silicon oxynitride, hydrogen-rich SiO x N y or hydrogen-rich AlN xAny of the layers. This embodiment does not limit the specific ratio of the thickness of the second passivation layer 22 to the total thickness of all passivation layers. For example, the ratio of the thickness of the second passivation layer 22 to the total thickness of the first passivation layer 21, the second passivation layer 22, and the third passivation layer 23 can be 1 / 3 to 5 / 6, including the values ​​at both ends. This embodiment does not limit the specific thickness of the second passivation layer 22. For example, the thickness of the second passivation layer 22 can be 50nm to 100nm, including the values ​​at both ends.

[0040] This embodiment does not limit the specific plating width of the third passivation layer 23, as long as it ensures that a stacked passivation film layer can be formed on the side where the non-cut surface is connected to the cut surface. For example, the plating length of the third passivation layer 23 can be 2mm-10mm, including the values ​​at both ends.

[0041] like Figure 2 and Figure 3 As shown, a first passivation layer 21 and a second passivation layer 22 are sequentially disposed along the direction away from the non-cut surface, and a third passivation layer 23 is disposed on the cut surface. A stacked passivation film structure with three passivation layers is formed in the side-mounted area. By introducing a stacked passivation film structure on the side, the hydrogen overflow during the annealing process that is necessary in the side passivation process can be reduced, thereby improving the stability of the side passivation.

[0042] This embodiment does not limit the specific type of the third passivation layer 23. For example, the third passivation layer 23 can be a non-hydrogen passivation layer; the non-hydrogen passivation layer can be a SiO2 layer, AlO2 layer, etc. x The passivation layer can be any one of a gallium oxide layer or a zirconium oxide layer. It should be noted that in this embodiment, the first passivation layer 21 and the third passivation layer 31 can be made of the same type or different types of passivation dielectric materials. This embodiment does not limit the specific thickness of the third passivation layer 31; for example, the thickness of the third passivation layer 31 can be 5nm-100nm, including the values ​​at both ends.

[0043] Furthermore, in this embodiment, the cutting surface may include a laser-cut surface and a stress-cut surface; along the length direction of the cutting surface, the laser-cut surface is located at both ends of the cutting surface, and the stress-cut surface is located between the two laser-cut surfaces; the thickness of the third passivation layer 23 located on the laser-cut surface can be greater than the thickness of the third passivation layer 23 located on the stress-cut surface; the thickness difference between the third passivation layer 23 located on the laser-cut surface and the third passivation layer 23 located on the stress-cut surface can be greater than 10 nm. It should be noted that in this embodiment, the cutting surface can be formed by laser grooving and stress cleaving. The morphology of the cutting surface formed by this method is different in the laser-cutting area and the stress-cutting area. By setting passivation layers of different thicknesses in the laser-cutting area and the stress-cutting area, the flatness of the passivation layer of the entire cutting surface can be improved, thereby improving the passivation effect of the cutting surface.

[0044] Furthermore, in this embodiment, the cutting surface may include a fourth passivation layer covering the third passivation layer 23. The fourth passivation layer is a hydrogen passivation layer, and the fourth passivation layer is deposited around the third passivation layer 23 on the non-cutting surface. It should be noted that in this embodiment, the cutting surface adopts a stacked passivation film structure composed of the third passivation layer 23 and the fourth passivation layer, which can achieve a better passivation effect. Furthermore, when the cutting surface includes a laser cutting surface and a stress cutting surface, the total thickness of the third passivation layer 23 and the fourth passivation layer on the laser cutting surface can be greater than the total thickness of the third passivation layer 23 and the fourth passivation layer on the stress cutting surface; the difference between the total thickness of the third passivation layer 23 and the fourth passivation layer on the laser cutting surface and the total thickness of the third passivation layer 23 and the fourth passivation layer on the stress cutting surface can be greater than 10 nm. This embodiment does not limit the specific type of the fourth passivation layer; for example, the fourth passivation layer can be hydrogen-rich AlO. x Layer, hydrogen-rich SIN x Layer, hydrogen-rich SiO x Layered, hydrogen-rich SiON x Layer, hydrogen-rich AlN x The passivation layer can be either a layer or a hydrogen-rich AlON layer. Furthermore, in this embodiment, the fixed charge density of the third passivation layer 23 can be greater than that of the fourth passivation layer. It should be noted that fixed charge density refers to the concentration of fixed charge within the dielectric material caused by its chemical composition and defect type, and can be determined using a capacitance-voltage (CV) test method. The value of the fixed charge density affects the passivation effect; in this embodiment, using the aforementioned range for the fixed charge density of the third passivation layer 23 can improve the passivation effect.

[0045] Furthermore, in this embodiment, solder joints are provided in the area of ​​the battery cell 1 near the edge of the third passivation layer 23 but not covered by the third passivation layer 23; multiple solder joints are provided on at least one side surface of the battery cell 1; the solder joints are arranged sequentially along a direction perpendicular to the cutting surface; along the direction perpendicular to the cutting surface, the spacing between adjacent solder joints on the side near the cutting surface is less than the spacing between adjacent solder joints on the side at least partially away from the cutting surface. It should be noted that in this embodiment, solder joints are provided in the area near the edge of the third passivation layer 23 but not covered by the third passivation layer 23, and the spacing between adjacent solder joints on the side near the cutting surface is less than the spacing between adjacent solder joints on the side away from the cutting surface, so as to increase the distance from the solder joints on the side near the cutting surface to the edge of the cutting surface, which can effectively reduce the component cold solder joint problem caused by the passivation layer being deposited around the surface of the battery cell 1.

[0046] Based on the above embodiments, after forming two passivation layers on the non-cut surface of the battery cell, this application performs a third passivation layer wrap-around plating on the non-cut surfaces on both sides of the cut surface. The third passivation layer is wrapped around and covers the outside of the two passivation layers on the non-cut surface, and the proportion of the wrap-around plating width on the non-cut surface is controlled. A three-layer stacked passivation film structure is formed in the side wrap-around plating area. This stacked passivation film structure is beneficial to blocking hydrogen leakage, thereby improving the stability of the passivation of the cut surface.

[0047] This application also provides a photovoltaic module, which may include the solar cell described above.

[0048] Based on the above embodiments, the photovoltaic module of this application uses the above-mentioned solar cell and also has the above-mentioned beneficial effects.

[0049] Please refer to Figure 4 , Figure 4 A flowchart of a solar cell fabrication method provided in this application embodiment, the method may include:

[0050] S101: A first passivation layer is provided on the side of the battery cell to be cut.

[0051] This embodiment does not limit the specific type of solar cell to be cut; the solar cell to be cut may be, but is not limited to, crystalline silicon solar cells.

[0052] It should be noted that in this embodiment, step S101 involves setting a first passivation layer 21 on all four sides of the cut battery cell 1.

[0053] S102: After forming the first passivation layer, a second passivation layer is set on the surface of the first passivation layer away from the surface of the cell to be cut; the second passivation layer is a hydrogen passivation layer;

[0054] This embodiment does not limit the specific type and thickness of the first passivation layer 21, nor the specific type and thickness of the second passivation layer 22. Please refer to the above embodiment, which will not be repeated here.

[0055] S103: After forming the second passivation layer, the battery cell to be cut is cut along the thickness direction to obtain a single battery cell; at least one side of the battery cell has a cutting surface, and the side of the battery cell other than the cutting surface is a non-cutting surface; the non-cutting surface is provided with a first passivation layer and a second passivation layer, and the first passivation layer and the second passivation layer do not cover the cutting surface.

[0056] It should be noted that after the battery cell to be cut is cut in this embodiment, a new side surface will be formed at the cutting position. This side surface is the cutting surface, and the cutting surface is not provided with the first passivation film layer 2.

[0057] This embodiment does not limit the specific cutting method, as long as it can ensure that the battery cell to be cut can be cut into a single battery cell 1. For example, a laser can be used to cut the battery cell to be cut along the thickness direction to obtain a single battery cell 1.

[0058] This embodiment does not limit the specific number of cuts. The battery cell to be cut can be cut once along the thickness direction at one cutting position to obtain two battery cells 1; or the battery cell to be cut can be cut separately along the thickness direction at two cutting positions to obtain three battery cells 1. Among them, there are two types of battery cells 1. One type of battery cell 1 has a cutting surface formed on one side, and the other three sides of the battery cell 1 are non-cutting surfaces; the other type of battery cell 1 has cutting surfaces formed on the opposite two sides, and the opposite two sides of the battery cell 1 are non-cutting surfaces; or the battery cell to be cut can be cut separately along the thickness direction at multiple cutting positions to obtain multiple battery cells 1.

[0059] S104: A third passivation layer is provided on the cut surface of the solar cell, and the third passivation layer is deposited around the non-cut surface adjacent to the cut surface, and partially covers the second passivation layer. The ratio of the length of the third passivation layer to the overall length of the non-cut surface to which it is deposited is 1 / 60-1 / 8, including the values ​​at both ends, to obtain a solar cell.

[0060] This embodiment does not limit the specific plating length of the third passivation layer 23, nor the specific type and thickness of the third passivation layer 23. Please refer to the above embodiment for details, which will not be repeated here.

[0061] Based on the above embodiments, after forming two passivation layers on the non-cut surface of the battery cell, this application performs a third passivation layer wrap-around plating on the non-cut surfaces on both sides of the cut surface. The third passivation layer is wrapped around and covers the outside of the two passivation layers on the non-cut surface, and the proportion of the wrap-around plating width on the non-cut surface is controlled. A three-layer stacked passivation film structure is formed in the side wrap-around plating area. This stacked passivation film structure is beneficial to blocking hydrogen leakage, thereby improving the stability of the passivation of the cut surface.

[0062] The beneficial effects of the above-mentioned solar cells are illustrated below with specific examples. This embodiment uses the above-described solar cell fabrication method to prepare the solar cell. Figures 1 to 3 The solar cell shown is used, and experiments were conducted on it. The experimental data obtained are as follows: Figure 5As shown, the horizontal axis represents the open-circuit voltage (Voc), the left vertical axis represents the change in open-circuit voltage, and the right vertical axis represents the change in fill factor (pFF). This embodiment uses the SunsVoc method (an important method for characterizing the electrical properties of solar cells, which evaluates cell performance by measuring the open-circuit voltage under different illumination conditions) to characterize the trend of side passivation before and after passivation. After side-wrap protection, the Voc and pFF, as well as the convergence, are significantly improved before and after slicing.

[0063] This document uses specific examples to illustrate the principles and implementation methods of this application. The various embodiments are progressive, with each embodiment focusing on its differences from others. Similar or identical parts between embodiments can be referred to interchangeably. The descriptions of the embodiments above are merely illustrative of the method and core ideas of this application. For those skilled in the art, various improvements and modifications can be made to this application without departing from its principles, and these improvements and modifications also fall within the scope of protection of the claims of this application.

[0064] It should also be noted that, in this specification, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes the element.

Claims

1. A solar cell, characterized in that, include: Battery cells; The battery cell has a cut surface on at least one side, and the other side of the battery cell is a non-cut surface. The non-cut surface is provided with a first passivation layer and a second passivation layer arranged sequentially in a direction away from the non-cut surface. The second passivation layer is a hydrogen passivation layer, and the first passivation layer and the second passivation layer do not cover the cut surface. The cut surface is provided with a third passivation layer; the third passivation layer is plated around the non-cut surface adjacent to the cut surface and covers part of the second passivation layer; the ratio of the length of the third passivation layer to the overall length of the non-cut surface to be plated is 1 / 60-1 / 8, including the values ​​at both ends.

2. The solar cell according to claim 1, characterized in that, The length of the third passivation layer is 2mm-10mm, including the values ​​at both ends.

3. The solar cell according to claim 1, characterized in that, The ratio of the thickness of the second passivation layer to the total thickness of the first passivation layer, the second passivation layer, and the third passivation layer is 1 / 3 to 5 / 6, including the values ​​at both ends.

4. The solar cell according to claim 1, characterized in that, The thickness of the second passivation layer is 50nm-100nm, including the values ​​at both ends.

5. The solar cell according to claim 1, characterized in that, The thickness of the first passivation layer is 5nm-100nm, including the values ​​at both ends; And / or, the thickness of the third passivation layer is 5nm-100nm, including the values ​​at both ends.

6. The solar cell according to claim 1, characterized in that, The first passivation layer is a non-hydrogen passivation layer; the non-hydrogen passivation layer is a hydrogen-poor SiO2 layer or a hydrogen-poor AlO2 layer. x The layer, a hydrogen-poor gallium oxide layer, or a hydrogen-poor zirconium oxide layer.

7. The solar cell according to claim 1, characterized in that, The hydrogen passivation layer is hydrogen-rich AlO₂. x Layer, hydrogen-rich SIN x Layer, hydrogen-rich SiO x Layer, hydrogen-rich silicon oxynitride, hydrogen-rich SiO x N y or hydrogen-rich AlN x Any of the layers.

8. The solar cell according to claim 1, characterized in that, The third passivation layer is a non-hydrogen passivation layer; the non-hydrogen passivation layer is a SiO2 layer and an AlO2 layer. x Any one of the following: a layer, a gallium oxide layer, or a zirconium oxide layer.

9. The solar cell according to claim 1, characterized in that, The cutting surface includes a laser cutting surface and a stress cutting surface; along the length direction of the cutting surface, the laser cutting surface is located at both ends of the cutting surface, and the stress cutting surface is located between the two laser cutting surfaces; the thickness of the third passivation layer located on the laser cutting surface is greater than the thickness of the third passivation layer located on the stress cutting surface; the thickness difference between the third passivation layer located on the laser cutting surface and the third passivation layer located on the stress cutting surface is greater than 10 nm.

10. The solar cell according to claim 1, characterized in that, The cut surface includes a fourth passivation layer covering the third passivation layer. The fourth passivation layer is a hydrogen passivation layer, and the fourth passivation layer is coated around the third passivation layer on the non-cut surface.

11. The solar cell according to claim 10, characterized in that, The fixed charge density of the third passivation layer is greater than that of the fourth passivation layer.

12. The solar cell according to claim 1, characterized in that, Solder joints are provided in the area of ​​the battery cell near the edge of the third passivation layer but not covered by the third passivation layer; The battery cell has a plurality of solder joints on at least one side surface; the solder joints are arranged sequentially along a direction perpendicular to the cut surface; along the direction perpendicular to the cut surface, the distance between adjacent solder joints on the side closer to the cut surface is less than the distance between adjacent solder joints on the side at least partially away from the cut surface.

13. A photovoltaic module, characterized in that, include: The solar cell according to any one of claims 1 to 12.