Diamond anvil cell microlithography and material transfer system

Abstract

The invention discloses a diamond anvil cell microlithography and material transfer system. The system comprises a bottom plate; the supporting piece is arranged on the bottom plate; the main light box is mounted on the supporting piece and is used for realizing microscopic imaging and micro-nano photoetching exposure; the focusing mechanism is connected with the main light box and used for driving the main light box to move in the vertical direction so as to adjust the focal length; the objective lens turntable is connected with the main light box and is provided with a microscopic imaging objective lens and a photoetching exposure objective lens; and the multi-axis alignment device is positioned below the main light box and comprises a sample table with heating and vacuum adsorption functions. The system integrates the functions of microscopic imaging, photoetching exposure and material transfer, and is suitable for high-precision micro-nano machining operation in a diamond anvil cell micro area. Through the double-channel optical path design and the multi-axis thermal adsorption alignment device, the machining precision and the experiment efficiency are effectively improved, and the technical threshold and the operation difficulty of high-pressure physical property research are remarkably reduced.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical fields of optics, micro-nano processing and the like, and particularly relates to a diamond anvil cell micro-lithography and material transfer system. BACKGROUND

[0002] Pressure is the most basic thermodynamic parameter. By applying pressure to a material, the gap between atoms in the material can be changed, and the physical properties of the material can be affected. For example, an insulator material can be converted into a metal or even a superconductor under pressure. In recent years, the exploration of basic frontier problems in the field of condensed matter physics, such as the exploration of copper oxide unconventional high-temperature superconductors, the exploration of correlated electron materials, and the discovery of hydrogen-rich superconductors, cannot be separated from high pressure as an extreme condition. Based on the diamond anvil technique, people can apply pressure to the sample to be measured from thousands of times atmospheric pressure (zero point several GPa) to millions of times atmospheric pressure (hundred GPa). How to realize the physical property measurement, especially the electrical property measurement, in the device based on the diamond anvil technique is the key to such research.

[0003] The traditional device mainly consists of a pair of anvil placed diamond, metal press, and sealing pad. The anvil surface and the pinhole of the sealing pad form a small sealed cavity for placing the sample to be measured. Since the diameter of the anvil surface is inversely proportional to the limit pressure that can be obtained, in order to realize the measurement under high pressure, the diameter of the anvil surface is usually between 800 microns and 30 microns. The diameter of the pinhole is usually half of the diameter of the anvil surface, i.e. between 400 microns and 15 microns. It is quite challenging to build a circuit in such a small and narrow area and realize electrical transport measurement.

[0004] Two traditional sample building methods for electrical transport measurement. Method A uses silver glue to connect a 10um diameter gold wire to the sample. This method can use oil, gas, etc. as a pressure transmission medium, which can ensure good hydrostatic pressure characteristics, but the operation is extremely difficult. And the sample has a minimum size limit (about 100 microns), which is difficult to apply to pressure experiments above 50 GPa. Method B uses a platinum strip attached to the surface of the diamond. The sample is adhered to the pinhole by sodium chloride, potassium chloride, cubic boron nitride, aluminum oxide, etc. When the pressure is loaded, the sample will contact the platinum strip and conduct. This method has the advantage of high pressure that can be obtained, up to hundreds of GPa, but the hydrostatic pressure effect is poor due to the use of solid pressure transmission medium. SUMMARY

[0005] In order to solve the above problems, the present application provides a diamond anvil cell micro-lithography and material transfer system, which is convenient to operate, moderate in cost, efficient and precise, and can effectively solve the problems in the prior art.

[0006] The diamond anvil cell micro-lithography and material transfer system is characterized in that the main light box comprises: a bottom plate; a support arranged on the bottom plate; a main light box mounted on the support and used for realizing micro-imaging and micro-nano lithography exposure; a focusing mechanism connected to the main light box and used for driving the main light box to move in a vertical direction to adjust a focal length; an objective lens turntable connected to the main light box and mounted with a micro-imaging objective lens and a lithography exposure objective lens; a multi-axis alignment device located below the main light box and comprising a sample stage with heating and vacuum adsorption functions; a control system used for controlling electric actions of the system.

[0007] The diamond anvil cell micro-lithography and material transfer system according to claim 1 is characterized in that the main light box comprises: a white light source and a 365 nm ultraviolet light source, which are respectively output through a multi-mode optical fiber; two collimating lenses, which are respectively used for collimating and homogenizing a white light beam and a 365 nm ultraviolet light beam to form a collimated light beam with a waist of about 8 mm; a first reflecting mirror, which is used for reflecting the white light output by the collimating lens to a subsequent light path; a 90% reflection and 10% transmission beam splitter, which is used for transmitting the white light from the first reflecting mirror to a subsequent light path and reflecting the ultraviolet light from the 365 nm ultraviolet light source to a subsequent light path; a first half-reflecting and half-transmitting lens, which is used for reflecting the white light or the ultraviolet light beam from the 90% reflection and 10% transmission beam splitter to a subsequent second half-reflecting and half-transmitting lens; a second half-reflecting and half-transmitting lens, which is used for further guiding the light beam into an imaging objective lens or an exposure objective lens and transmitting the light beam returned from the imaging objective lens to an imaging lens; an imaging lens, which is used for focusing the imaging light beam; a second reflecting mirror located behind the imaging lens and used for reflecting the imaging light beam into a camera; a camera, which is used for micro-imaging.

[0008] As a preferred technical solution, the 90% reflection and 10% transmission beam splitter has an optical property of 90% reflection and 10% transmission for incident light.

[0009] As a preferred technical solution, the first half-reflecting and half-transmitting lens and the second half-reflecting and half-transmitting lens both have a transmittance of 50% and a reflectance of 50%.

[0010] As a preferred technical solution, the turning on and light intensity of the white light source and the 365 nm ultraviolet light source are controlled through an analog voltage signal of 0-5 V.

[0011] As a preferred technical solution, the focusing mechanism comprises a manual focusing hand wheel to realize precise vertical displacement of the main light box and the objective lens turntable.

[0012] As a preferred technical solution, the sample stage is provided with a heating device and a vacuum adsorption hole, and has a temperature control function in the range of 50-180 DEG C and a vacuum adsorption function.

[0013] As a preferred technical solution, the multi-axis alignment device comprises XYZ three-axis linear displacement adjustment and rotation, pitch and yaw adjustment functions to realize multi-degree-of-freedom alignment of the mask plate or the material and the diamond anvil.

[0014] As a preferred technical solution, the objective lens turntable rotates to switch between a microscopic imaging objective lens and a photolithography exposure objective lens, wherein the exposure objective lens is used to expand 365nm ultraviolet light to a circular spot with a diameter of about 16mm to realize photolithography exposure.

[0015] The beneficial effects of the present application are: the diamond anvil micro-lithography and material transfer system provided by the present application integrates microscopic imaging, micro-nano lithography exposure and material transfer functions in one, realizes high-precision micro-nano processing on the surface of the diamond anvil; The system has compact structure and high degree of modularity, can accurately switch between imaging and exposure modes by using the double-channel light path structure in the main light box, significantly improves the micro-nano processing precision and experimental efficiency; the multi-axis alignment device is equipped with a controllable heating and vacuum adsorption sample stage, ensuring stable and reliable material transfer process, further improving the experimental operation success rate; The present application has simple operation, reduces the cost and difficulty of micro-nano processing, promotes the experimental method innovation and technology popularization in the field of high-pressure scientific research, has wide application prospect and significant technical and economic benefits. BRIEF DESCRIPTION OF DRAWINGS

[0016] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the drawings needed in the embodiment or prior art description will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the present application, and those skilled in the art can obtain other drawings according to these drawings without creating any creative labor.

[0017] Fig. 1 is a schematic diagram of the three-dimensional structure of the present application; Fig. 2 is a schematic diagram of the internal structure of the main light box of the present application; 1. Base plate; 2. Support component; 3. Main light box; 4. Focusing mechanism; 5. Objective lens turntable; 6. Multi-axis alignment device; 61. Sample stage; 7. Control system; 31. White light source; 32. 365nm ultraviolet light source; 33. Collimating lens; 34. First reflecting mirror; 36. First semi-reflective mirror; 37. Second semi-reflective mirror; 38. Imaging objective lens; 39. Exposure objective lens; 310. Imaging lens; 311. Second reflecting mirror; 312. Camera. Detailed Implementation

[0018] All features disclosed in this specification, or all steps in all disclosed methods or processes, may be combined in any way, except for mutually exclusive features and / or steps.

[0019] Any feature disclosed in this specification (including any appended claims, abstract, and drawings) may be replaced by other equivalent or similar features for a similar purpose, unless specifically stated otherwise. That is, unless specifically stated otherwise, each feature is merely one example of a series of equivalent or similar features.

[0020] like Figs. 1-2 As shown, the present invention discloses a diamond anvil cell microlithography and material transfer system, which includes a base plate 1, a support 2, a main optical box 3, a focusing mechanism 4, an objective lens turntable 5, a multi-axis alignment device 6, and a control system 7. The components work together to achieve high-precision microscopic imaging, micro-nano lithography, and precise transfer of two-dimensional materials on the surface of a diamond anvil cell.

[0021] The system is supported by a base plate 1 at the bottom, on which a support component 2 is mounted to house the main optical box 3 and its associated structures. The main optical box 3, mounted on the support component 2, is the core optical unit of the system, integrating a dual-channel optical path structure for imaging and photolithography. The main optical box 3 is connected to the support component 2 via a focusing mechanism 4, which uses a manual focusing handwheel to allow for precise vertical movement of the main optical box 3, thereby enabling fine-tuning of the focal length and ensuring focusing accuracy during microscopic imaging and exposure.

[0022] The objective turret 5 is positioned between the main light box 3 and the sample area, serving to carry and switch between the microscopic imaging objective 38 and the lithography exposure objective 39. The turret structure supports rotational switching; when microscopic imaging is required, it can be rotated to the imaging objective 38 position; when micro / nano lithography exposure is performed, it switches to the exposure objective 39 position, adapting to the optical path requirements of different operating modes. The exposure objective 39 has beam-expanding capabilities, able to expand 365nm ultraviolet light into a uniform circular spot with a diameter of approximately 16mm for exposing the sample surface and forming lithographic patterns.

[0023] Two light sources are provided in the main light box 3: one is a white light source 31, and the other is a 365 nm ultraviolet light source 32, both of which are coupled into the system through a multi-mode optical fiber. Each light source is equipped with an independent collimating lens 33, so that the light beam is collimated and homogenized before entering the subsequent optical system, forming a parallel light beam with a beam waist of about 8 mm, to ensure the imaging and exposure quality of the subsequent optical path.

[0024] After collimation, the white light is first reflected by the first mirror 34, and then passes through a beamsplitter with 90% reflection and 10% transmission characteristics. The function of the beamsplitter is to transmit most of the white light to the subsequent optical path, while allowing 365 nm ultraviolet light to enter from another path with high reflectivity, together forming a combined path of dual light source input. The white light or ultraviolet light continues to propagate along the optical path and enters the first half-reflective half-transmissive lens 36 arranged below it, which has a 50% reflection and 50% transmission characteristic, and can reflect the light beam to the second half-reflective half-transmissive lens 37. The second half-reflective half-transmissive lens 37 is also a 50% reflection and 50% transmission structure, used to guide the light beam into the objective lens system, completing the imaging or exposure operation on the sample area.

[0025] In the imaging mode, the white light is guided to the imaging objective lens 38, reflected back to the main light box 3 after being reflected by the sample, and then transmitted through the second half-reflective half-transmissive lens 37 into the subsequent optical system. The return light beam is focused by an imaging lens 310, and reflected by a second mirror 311 arranged behind it into a camera 312, realizing the capture of the sample image. The camera 312, as part of the main light box 3, provides high-resolution microscopic images to the operator through the image acquisition feedback system, for precise alignment and sample observation.

[0026] The system also includes a multi-axis alignment device 6 arranged below the main light box 3, which includes XYZ three-axis linear displacement adjustment mechanism, as well as rotation, pitch and yaw angle adjustment mechanism, for realizing high-precision alignment operation of the mask plate or two-dimensional material and the diamond anvil in multiple degrees of freedom. The alignment device is configured with a sample stage 61, which has a adjustable heating function of 50-180℃ and vacuum adsorption capability, for fixing the material during material transfer to prevent slipping, and improving the success rate and uniformity of material transfer through thermal assistance.

[0027] The control system 7, as the central management unit of the whole machine, can control the focusing operation of the main light box 3, the switching of the objective lens turntable 5, the heating and adsorption function of the sample stage 61, the opening and closing of the light source, and the light intensity adjustment function, etc. Some parameters can be finely controlled through 0-5V analog voltage, improving the automation level and operation convenience of the whole system.

[0028] The system has compact structure, high integration degree and simple operation, is especially suitable for micro-nano structure lithography and two-dimensional material transfer stacking in a micro area of a diamond anvil, and provides a high-precision, high-efficiency and low-cost technical solution for electrical testing and functional material research under extreme high pressure.

[0029] The above merely describes a specific implementation of the present application, but the protection scope of the present application is not limited thereto, any change or replacement without creative labor should be covered in the protection scope of the present application. Therefore, the protection scope of the present application should be limited by the protection scope defined in the claims.

Claims

1. A diamond anvil micro-lithography and material transfer system, comprising: The utility model relates to a kind of micro-nano lithography exposure systems, including: Bottom plate (1); Supporting piece (2), be located on the bottom plate (1); Main light box (3), is installed on the supporting piece (2), for realizing microimaging and micro-nano lithography exposure; Focusing mechanism (4), connecting the main light box (3), for driving the main light box (3) moves along vertical direction to adjust focal length; Objective lens turntable (5), with the main light box (3) is connected, is installed with microimaging objective lens and lithography exposure objective lens; Multi-axis alignment device (6), be located below the main light box (3), including with heating and vacuum adsorption function sample table (61); Control system, for controlling the electric action of system.

2. The diamond anvil microlithography and material transfer system of claim 1, wherein: The main light box (3) includes: White light source (31) and 365nm ultraviolet light source (32) respectively through multimode optical fiber output; Two collimating lenses (33), respectively collimate and homogenize white light beam and 365nm ultraviolet light beam, form about 8mm beam waist collimated light beam; First reflecting mirror (34), for reflecting the white light output by collimating lens (33) to subsequent optical path; 90 anti 10 transmission mirror, for transmitting white light from first reflecting mirror (34) to subsequent optical path, and reflecting ultraviolet light from 365nm ultraviolet light source (32) to subsequent optical path; First half reflecting half transmitting lens (36), for reflecting white light or ultraviolet light beam from 90 anti 10 transmission mirror to subsequent second half reflecting half transmitting lens (37); Second half reflecting half transmitting lens (37), for further guiding light beam to enter imaging objective lens (38) or exposure objective lens (39), and transmitting light beam returned from imaging objective lens (38) to imaging lens (310); Imaging lens (310), for focusing imaging light beam; Second reflecting mirror (311), located behind the imaging lens (310), for reflecting imaging light beam into camera (312); Camera (312), for microimaging.

3. The diamond anvil cell micro-lithography and material transfer system of claim 2, wherein: The 90 anti 10 transmission mirror has 90% reflection and 10% transmission optical properties to incident light.

4. The diamond anvil cell micro-lithography and material transfer system of claim 2, wherein: The first half reflecting half transmitting lens (36) and the second half reflecting half transmitting lens (37) both have 50% transmittance and 50% reflectance.

5. The diamond anvil cell micro-lithography and material transfer system of claim 2, wherein: The white light source (31) and the 365nm ultraviolet light source (32) are turned on and light intensity is controlled by 0-5V analog voltage signal.

6. The diamond anvil cell micro-lithography and material transfer system of claim 1, wherein: The focusing mechanism (4) includes a manual focusing hand wheel to realize precise vertical displacement of the main light box (3) and the objective lens turntable (5).

7. The diamond anvil cell micro-lithography and material transfer system of claim 1, wherein: The sample table (61) is provided with a heating device and a vacuum adsorption hole, and has a temperature control function in the range of 50-180 DEG C and a vacuum adsorption function.

8. The diamond anvil cell micro-lithography and material transfer system of claim 1, wherein: The multi-axis alignment device (6) includes XYZ three-axis linear displacement adjustment and rotation, pitch and yaw adjustment functions to realize multi-degree-of-freedom alignment of a mask or a material and a diamond anvil.

9. The diamond anvil cell micro-lithography and material transfer system of claim 2, wherein: The objective lens turntable (5) rotates to switch microimaging objective lens and lithography exposure objective lens, wherein the exposure objective lens is used to expand 365nm ultraviolet light to a circular spot with a diameter of about 16mm to realize lithography exposure.

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