Glass edge chamfer correction processing method

Abstract

The invention relates to a glass edge chamfer correction processing method. The glass edge chamfer correction processing method comprises the steps of 101, pretreatment and protection, 102, measurement and laser profiling modification, 103, chemical etching and 104, laser splitting. According to the design provided by the invention, the three-dimensional shape of the modified area is actively controlled by utilizing the spatial light modulation technology, the glass side edge with the compensation inclination angle is generated, and finally, the chamfer shape meeting the design requirement is obtained through etching, so that the consistency of the product size is remarkably improved. The two key procedures of chamfering correction and splitting are organically integrated in one flow, the number of times of workpiece clamping, transferring and aligning is reduced, and the machining efficiency and the overall yield are improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of glass processing, in particular to a glass edge chamfer correction processing method. BACKGROUND

[0002] In the field of consumer electronics, the edges of glass components often need to be chamfered to improve the feel, aesthetics and safety. For example, patent document CN120136444A discloses a UTG ultra-thin glass edge chamfering method, which avoids the risk of glass breakage caused by stress concentration and eliminates the problem of dust pollution. Compared with chemical etching technology, the precise controllability of laser pretreatment greatly reduces the sensitivity to etching parameters, ensuring the stability of processing precision and surface quality.

[0003] However, the above technical solution has obvious limitations. After single-sided liquid phase polishing of the glass, the etching solution penetrates from one side of the glass to the other side during the liquid phase polishing process. The etching solution stays on the top of the glass and the straight body for a long time and corrodes the glass. Therefore, the side and bottom of the glass become non-vertical. The above technical solution cannot correct the chamfer deformation caused by the previous process. Moreover, the existing cracking method usually uses mechanical cracking, which can easily cause edge collapse, micro-cracks, poor precision and other problems. Therefore, it is necessary to develop a new technical design that can correct the chamfer deformation caused by the previous process and efficiently and accurately crack to solve the above problems. SUMMARY

[0004] The present application relates to the technical field of glass processing, in particular to a glass edge chamfer correction processing method.

[0005] The present application provides the following technical solution: a glass edge chamfer correction processing method, comprising: By means of a laser, a profiled chamfer beam is generated using the side body line of the glass substrate and the back surface or the perpendicular front surface of the glass substrate, and then chemical etching is performed. After the chemical etching, a side body line of the glass substrate and a back surface or a non-perpendicular edge chamfer of the glass substrate are obtained. The offset angle θ of the side body line of the glass substrate is measured using an optical microscope. The side body line of the glass substrate obtained in step 102 is symmetrically offset around the X-axis to obtain a correction angle α. Then, the intersection of the extended chamfer line and the offset side body line of the glass substrate is obtained by means of a spatial light modulator to obtain a corrected profiled beam. According to the modified profiling light, the chamfering is performed.

[0006] The step 104 comprises: 1042, laser profiling modification: by scanning the glass substrate (1) along the modified profiling light beam by a laser, a scanning path one is formed, and a continuous modification area is formed in the glass substrate (1); 1043, chemical etching again: the glass substrate treated by step 1042 is immersed in an etching solution for chemical etching, the etching solution preferentially corrodes the modification area, and then etches the glass substrate along the modification area, to preliminarily form a chamfering structure with the modified angle α; 1044, laser splitting: a laser beam is emitted by a second laser, and the laser beam is controlled to scan along the scanning path one to form a scanning path two, and the alkali-resistant protective ink is removed and the glass substrate and the glass waste are separated at the same time.

[0007] Preferably, the step 1044, laser splitting, comprises: Ablation of the protective ink: the energy of the second laser heats, vaporizes and removes the alkali-resistant protective ink on the scanning path two, and removes the connection between the glass substrate and the glass waste; Thermal stress splitting: the thermal stress generated by the second laser and the microstructure weakening caused by the step 1043, chemical etching again, are combined to separate the glass substrate and the glass waste along the modification area and along the etching path of the etching solution.

[0008] Preferably, after the step 104, there is further a step 105, ink removal cleaning: the glass obtained after completing the step 104 is placed in an ink removal cleaning solution for cleaning to remove the alkali-resistant protective ink on the glass.

[0009] Preferably, the alkali-resistant protective ink is an epoxy resin type alkali-resistant ink.

[0010] Preferably, the thickness of the alkali-resistant protective ink is 30-50 μm.

[0011] Preferably, the etching solution used in the step 103, chemical etching, is a sodium hydroxide or potassium hydroxide solution.

[0012] Preferably, the first laser is an infrared laser or an ultrafast laser.

[0013] Preferably, the second laser is a carbon dioxide laser.

[0014] Preferably, the power of the second laser is 10-30w, the scanning speed of the second laser is 400-800mm / s, and the spot diameter of the second laser is 14-15mm.

[0015] Compared with the prior art, the present application has the following advantages: 1. The glass edge chamfer correction processing method of the present application generates a profiled chamfer beam by using the side line of the glass substrate and the back surface or the perpendicular front surface of the glass substrate through the first laser, and then performs chemical etching; 102. After the chemical etching, a side line of the glass substrate and a chamfered edge of the back surface or the non-perpendicular edge of the glass substrate are obtained, and the offset angle θ of the side line of the glass substrate is measured by using an optical microscope; 103. The side line of the glass substrate after step 102 is symmetrically offset around the X axis to obtain a correction angle α, and then the intersection of the elongated chamfer line and the offset side line of the glass substrate is obtained through a spatial light modulator to obtain a correction profiled beam; 104. Chamfer processing is performed according to the correction profile. By actively controlling the three-dimensional shape of the modification area through the above-mentioned spatial light modulation technology, a glass side edge with a compensation inclination angle is generated, and a chamfer structure with a glass side line perpendicular to the glass surface is obtained.

[0016] 2. The glass edge chamfer correction processing method of the present application comprises 1041. pretreatment and protection, 1042. measurement and laser profiled modification, 1043. chemical etching, and 1044. laser splitting. By actively controlling the three-dimensional shape of the modification area through the above-mentioned spatial light modulation technology, a glass side edge with a compensation inclination angle is generated, and finally a chamfer shape perpendicular or any other design requirement is obtained through etching, which significantly improves the consistency of product size. The two key processes of chamfer correction and splitting are organically integrated into one process, reducing the number of workpiece clamping, transferring and positioning, improving the processing efficiency and overall yield.

[0017] 3. The glass edge chamfer correction processing method of the present application, step 1044, laser splitting, comprises (a) ablation of protective ink and (b) thermal stress splitting. By the above-mentioned method, the splitting process is free of mechanical contact, avoiding defects such as edge collapse and micro-cracks, and the splitting path is accurate, resulting in high quality of the product edge.

[0018] 4. The glass edge chamfer correction processing method of the present application further comprises step 105, ink removal cleaning, after step 104. The glass obtained after step 104 is placed in ink removal cleaning for cleaning to remove the alkali-resistant protective ink on the glass. After the alkali-resistant protective ink is removed, the glass is convenient for subsequent processing in other processes.

[0019] 5. In the glass edge chamfering correction method of the present invention, the alkali-resistant protective ink is an epoxy resin-based alkali-resistant ink. The thickness of the alkali-resistant protective ink is 30-50 μm. The benzene rings and ether bonds in the epoxy resin molecular structure form a dense cross-linked network, which can effectively block the penetration of etching solution, and is especially suitable for strongly alkaline environments. The 30-50 μm thickness forms an elastic protective layer through the synergistic effect of polymer and inorganic filler.

[0020] 6. In the glass edge chamfering correction method of the present invention, step 103, the etching solution used in the chemical etching is a sodium hydroxide or potassium hydroxide solution. Using sodium hydroxide or potassium hydroxide solution as the etching solution can effectively promote the dissolution reaction of the glass and improve the etching efficiency.

[0021] 7. In the glass edge chamfering correction method of the present invention, the laser is either an infrared laser or an ultrafast laser. By selecting the appropriate laser, the processing accuracy and efficiency can be effectively improved.

[0022] 8. In the glass edge chamfering correction method of the present invention, the second laser is a carbon dioxide laser. By optimizing the processing parameters, the carbon dioxide laser can effectively avoid cracks and edge chipping during glass splitting, achieving high-precision non-destructive cutting.

[0023] 9. In the glass edge chamfering correction method of the present invention, the power of the second laser is 10-30W, the scanning speed of the second laser is 400-800mm / s, and the spot diameter of the second laser is 14-15mm. By setting these parameters, the laser instantly ablates the protective ink on the vaporization path, and uses the generated thermal stress to completely separate the product from the outer waste frame. Attached Figure Description

[0024] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0025] Figure 1 This is a flowchart illustrating the glass edge chamfering correction method of the present invention. Figure 1 ; Figure 2 This is a flowchart illustrating the glass edge chamfering correction method of the present invention. Figure 2 ; Figure 3 This is a schematic diagram of the laser dicing process for the glass edge chamfering correction method of the present invention; Figure 4The glass structure diagram after the glass edge chamfer correction processing method of the present application is processed by the patent method; Figure 5 The glass physical object diagram after the driving assembly of the glass edge chamfer correction processing method of the present application is processed by the patent method.

[0026] In each figure, 1, glass substrate; 2, alkali-resistant protective ink; 3, glass waste. DETAILED DESCRIPTION

[0027] The embodiments of the present application are described in detail below, examples of which are shown in the accompanying drawings, wherein the same or similar notations represent the same or similar elements having the same or similar functions throughout. The embodiments described below by referring to the drawings are exemplary only, for the purpose of explanation, and are not to be understood as a limitation of the present application.

[0028] In the description of the present application, it needs to be understood that the terms "first", "second" are only for the purpose of description, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined with "first", "second" can explicitly or implicitly include one or more of the features. In the description of the present application, the meaning of "multiple" is two or more, unless otherwise specifically limited.

[0029] In the description of the present application, it needs to be explained that, unless otherwise specifically specified and limited, the terms "mounting", "connection" should be understood broadly, for example, it can be fixed connection, or detachable connection, or integrally connected; it can be mechanical connection, or electrical connection or can communicate with each other; it can be directly connected, or indirectly connected through intermediate medium, or the internal communication of two elements or the interaction relationship between two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0030] In the description of the present application, it needs to be understood that the terms "up", "down", "side", "front", "back" and the like indicate the orientation or positional relationship based on the installation, and are only for the convenience of describing the present application and simplifying the description, and are not intended to indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, therefore, it cannot be understood as a limitation of the present application.

[0031] In the description of the present application, it needs to be explained that the term "and / or" is only a description of the association relationship between the associated objects, which means that there are three kinds of relationships, for example, A and / or B, which can represent the three cases of A alone, A and B together, and B alone.

[0032] It should be noted that the same reference signs in the embodiments of the present application represent the same component or the same part, and for the same parts in the embodiments of the present application, only one part or component may be labeled with a reference sign in the drawings, and it should be understood that the reference signs are also applicable to other identical parts or components.

[0033] In addition, in the technical features described in an open manner in the present application, a closed technical solution composed of the listed features is also included, as well as an open technical solution containing the listed features.

[0034] In order to further understand the invention content, characteristics and effects of the present application, the following embodiments are exemplified and described in detail as follows with reference to the drawings: As shown in Figures 1-5 The glass edge chamfer correction processing method comprises: 101, by means of the laser, a profiled chamfer beam is generated by using the side line of the glass substrate 1 and the back surface of the glass substrate 1 or the perpendicular front surface of the glass substrate 1, and then chemical etching is performed; it can be understood that the chamfer structure is pre-processed first, which facilitates subsequent measurement of the side line and the inclination angle of the glass surface; 102, after chemical etching, a chamfer is obtained on the side line of the glass substrate 1 and the back surface of the glass substrate 1 or the non-perpendicular edge of the glass substrate 1, and the optical microscope is used to measure the offset angle θ of the side line of the glass substrate 1; it can be understood that the offset angle of the side line of the glass substrate before correction can be measured after pre-processing in step 101, which facilitates subsequent compensation and correction of the angle; 103, the side line of the glass substrate 1 after step 102 is symmetrically offset around the X axis to obtain a correction angle α, and then the chamfer line and the offset side line of the glass substrate 1 intersect by means of the spatial light modulator to obtain a corrected profiled beam; it can be understood that the corrected profiled beam obtained by the above steps facilitates subsequent processing of the side line of the glass substrate and the chamfer structure perpendicular to the surface of the glass substrate; 104, chamfer processing is performed according to the corrected profiled light.

[0035] Specifically, as shown in Figure 2 The step 104 comprises: 1041, pretreatment and protection: alkali-resistant protective ink 2 is silk-screen printed on the back surface of the glass substrate 1, and the alkali-resistant protective ink 2 is subjected to curing treatment, and the front surface of the glass substrate 1 is exposed to the subsequent processing environment; it can be understood that the back surface of the glass substrate is protected by the alkali-resistant ink, which facilitates the occurrence of the phenomenon of edge collapse and cracks caused by sudden cracking in the subsequent chemical etching; of course, other methods that can protect the back surface of the glass substrate can also be used; 1042、laser profile modification: by laser one scanning along the modified profile beam to form a scanning path one and a continuous modification area inside the glass substrate 1; it can be understood that controlling the laser to scan along the modified profile beam can obtain the glass substrate side body line and the perpendicular chamfer structure of the glass substrate surface, and the modified profile beam is a multi-focus profile beam; of course, it is not limited thereto, and other structures that can achieve the same effect can be used.

[0036] 1043、chemical etching again: after the glass substrate treated by step 1042 is immersed in the etching liquid for chemical etching, the etching liquid preferentially corrodes the modification area, and then etches the glass substrate along the modification area to preliminarily form a chamfer structure with a modified angle α; it can be understood that the chamfer structure is formed by the chemical etching liquid penetrating into the modification area to etch the glass substrate, so that the glass substrate and the glass waste are separated, but due to the alkali-resistant protective ink on the back, the glass substrate and the glass waste are connected through the alkali-resistant protective ink; of course, it is not limited thereto, and other structures that can etch out the chamfer structure can be used. 1044、laser splitting: laser two is used to emit a laser beam, and the laser beam is controlled to scan along the scanning path one to form a scanning path two, and the alkali-resistant protective ink 2 and the glass substrate and the glass waste 3 are separated synchronously. It can be understood that by controlling the laser to scan the glass substrate along the scanning path one, the alkali-resistant protective ink at the connection between the glass substrate and the glass waste is ablated, so that the glass waste is separated from the glass substrate, mechanical contact is avoided, and the phenomenon of cracks and edge collapse is avoided. Of course, it is not limited thereto, and other structures that can avoid the phenomenon of cracks and edge collapse can be used.

[0037] As shown in Figure 3 , the order of step 1041, pretreatment and protection, and step 1042, measurement and laser profile modification, can be interchanged, that is, the pretreatment and protection can be performed first, and then the measurement and laser profile modification can be performed, or the measurement and laser profile modification can be performed first, and then the pretreatment and protection can be performed.

[0038] Further, as shown in Figure 3 , step 1044, laser splitting, includes: Ablation of protective ink: the energy of laser two heats, vaporizes and removes the alkali-resistant protective ink on the scanning path two, removing the connection between the glass substrate and the glass waste 3; Thermal stress splitting: the thermal stress generated by laser two and the microstructure weakening caused by step 103, chemical etching, are combined to separate the glass substrate and the glass waste along the modification area and along the etching path of the etching liquid.

[0039] It can be understood that the two necessary steps of ablation protection ink and cracking are carried out at the same time by laser two, and the back alkali-resistant ink and thermal stress cracking are completed by laser two once scanning, which simplifies the process flow and improves the processing efficiency. Of course, it is not limited to this, and other methods that can achieve the same effect can be used.

[0040] Further, after step 104, step 105, ink removal cleaning, is also included, that is, the glass obtained after step 104 is placed in ink removal cleaning for cleaning to remove the alkali-resistant protective ink on the glass. It can be understood that the removal of the alkali-resistant protective ink facilitates the use of the glass in subsequent other processes.

[0041] Further, the alkali-resistant protective ink 2 is an epoxy resin type alkali-resistant ink. It can be understood that the benzene ring and ether bond in the molecular structure of the epoxy resin form a dense cross-linked network, which can effectively block the penetration of the etching solution. Of course, it is not limited to this, and other methods that can effectively block the penetration of the etching solution can be used.

[0042] Further, the thickness of the alkali-resistant protective ink 2 is 30-50 μm. It can be understood that the thickness of 30-50 μm forms an elastic protective layer through the synergistic effect of high molecular polymers and inorganic fillers. Of course, it is not limited to this, and other thicknesses that can achieve the same effect can be used.

[0043] Further, the etching solution used in step 103, chemical etching, is sodium hydroxide or potassium hydroxide solution. It can be understood that by using sodium hydroxide or potassium hydroxide solution as the etching solution, the dissolution reaction of the glass can be effectively promoted, and the etching efficiency can be improved. Of course, it is not limited to this, and other etching solutions that can improve the etching efficiency can be used.

[0044] Further, the laser one is an infrared laser or an ultrafast laser. It can be understood that by selecting the laser, the processing precision and processing efficiency can be effectively improved. Of course, it is not limited to this, and other methods that can improve the processing precision and processing efficiency can be used.

[0045] Further, the laser two is a carbon dioxide laser. It can be understood that by optimizing the parameters of the carbon dioxide laser, the occurrence of cracks and edge collapse during cracking can be effectively avoided, and high-precision non-destructive cutting can be achieved. Of course, it is not limited to this, and other methods that can effectively avoid cracks and edge collapse during cracking can be used.

[0046] Further, the power of the second laser is 10-30w, the scanning speed of the second laser is 400-800mm / s, and the spot diameter of the second laser is 14-15mm. Through the setting of these parameters, the alkali-resistant protective ink at the connecting part of the glass substrate and the glass waste is ablated and gasified by the laser in an instant, and the generated thermal stress makes the product and the glass waste frame completely separated. Of course, it is not limited to this, and other methods that can achieve the same effect can be used. Embodiment

[0047] 101. By the first laser, a profiled chamfering beam is generated using the side line of the glass substrate 1 and the back or the perpendicular front of the glass substrate 1, and then chemical etching is performed; 102. After chemical etching, a chamfering of the side line of the glass substrate 1 and the back or the non-perpendicular edge of the glass substrate 1 is obtained, and the optical microscope is used to measure that the side line of the glass substrate 1 is inclined inward by about 5°; 103. The side line of the glass substrate 1 after step 102 is offset around the X axis to obtain a revised angle of 5°, and then the chamfering line and the offset side line of the glass substrate 1 intersect through the spatial light modulator to obtain a revised profiled beam; 104. According to the revised profiled chamfering, the chamfering is processed.

[0048] 1041. Pretreatment and protection: a layer of epoxy alkali-resistant ink with a thickness of about 30μm is coated on the back of the glass substrate by silk screen printing, and is cured at 150℃ for 30 minutes. The front of the glass substrate remains clean; 1042. Laser profiled modification: an infrared laser is used to scan along the revised profiled chamfering beam to form a continuous modified area in the glass at a depth of about 500μm below the surface; 1043. Chemical etching again: the glass substrate is immersed in a sodium hydroxide etching solution at 120℃ for 180 minutes. The sodium hydroxide etching solution corrodes the modified area, and finally forms a chamfering with an inclination angle of 90° at the edge of the glass substrate and the front or back of the glass substrate; at the same time, the etching solution penetrates from the front to the back edge, slightly corroding the local back edge; 1044. Laser splitting: a 10W carbon dioxide laser with a spot diameter of 14mm is used. The laser beam is controlled to accurately scan along the scanning path of step 102 at a speed of 400mm / s; the alkali-resistant protective ink between the glass substrate and the glass waste is ablated and gasified by the laser in an instant, and the generated thermal stress makes the glass substrate and the glass waste frame completely separated.

[0049] 105. Ink removal cleaning: the glass obtained after step 104 is placed in an ink removal cleaning solution for cleaning to remove the alkali-resistant protective ink on the glass. The ink removal cleaning solution is a potassium hydroxide solution. Embodiment

[0050] 101. By laser No. 1, a profiled chamfering light beam is generated by using the side line of the glass substrate 1 and the back surface of the glass substrate 1 or the perpendicular front surface of the glass substrate 1, and then chemical etching is performed; 102. After chemical etching, a chamfering of the side line of the glass substrate 1 and the back surface of the glass substrate 1 or the non-perpendicular edge of the glass substrate 1 is obtained, and the inward inclination of the side line of the glass substrate 1 is about 5° by using an optical microscope; 103. The side line of the glass substrate 1 after step 102 is offset around the X axis to obtain a revised angle of 5°, and then a revised profiled light beam is obtained by extending the chamfering line and the offset side line of the glass substrate 1 to intersect each other through a spatial light modulator; 104. Chamfering is performed according to the revised profiled light.

[0051] 1041. Laser profiled modification: an infrared laser is used to scan along the revised profiled chamfering light beam to form a continuous modification zone in the glass substrate at a depth of about 500 μm below the surface; 1042. Pretreatment and protection: an epoxy alkali-resistant ink with a thickness of about 40 μm is applied to the back surface of the glass substrate by silk screen printing, and is cured at 150°C for 30 minutes. The front surface of the glass substrate remains clean; 1043. Re-chemical etching: the glass substrate is immersed in a sodium hydroxide etching solution at 120°C for 180 minutes. The sodium hydroxide etching solution corrodes the modification zone, and finally forms a chamfering with an inclination of 90° at the edge of the glass substrate and the front surface or the back surface of the glass substrate; at the same time, the etching solution penetrates from the front surface to the edge of the back surface, and slightly corrodes the local edge of the back surface; 1044. Laser cleaving: a 10W carbon dioxide laser is used, and the spot diameter is 14.5 mm. The laser beam is controlled to accurately scan along the scanning path of step 102 again at a speed of 600 mm / s; the alkali-resistant protective ink between the glass substrate and the glass waste is ablated and vaporized instantaneously by the laser, and the generated thermal stress completely separates the glass substrate from the glass waste frame.

[0052] 105. Ink removal cleaning: the glass obtained after step 104 is cleaned in an ink removal cleaning solution to remove the alkali-resistant protective ink on the glass. The ink removal cleaning solution is a potassium hydroxide solution. Embodiment

[0053] 101. By laser No. 1, a profiled chamfering light beam is generated by using the side line of the glass substrate 1 and the back surface of the glass substrate 1 or the perpendicular front surface of the glass substrate 1, and then chemical etching is performed; 102、After chemical etching, a side line of the glass substrate 1 and a chamfer of the back surface or a non-perpendicular edge of the glass substrate 1 are obtained, and the inward inclination of the side line of the glass substrate 1 is about 5° measured by an optical microscope; 103、The side line of the glass substrate 1 after step 102 is offset around the X axis to obtain a modified angle of 5°, and then a modified profiling light beam is obtained by extending the intersection of the chamfer line and the offset side line of the glass substrate 1 through a spatial light modulator; 104、Chamfering is performed according to the modified profiling light.

[0054] 1041、Pre-treatment and protection: an alkali-resistant ink of epoxy resin type with a thickness of about 50 μm is applied to the back surface of the glass substrate by silk screen printing, and is cured at 150°C for 30 minutes. The front surface of the glass substrate remains clean; 1042、Laser profiling modification: a continuous modification zone is formed at a depth of about 500 μm in the skin of the glass by scanning the glass substrate along the modified profiling chamfer light beam through an infrared laser; 1043、Chemical etching again: the glass substrate is immersed in a sodium hydroxide etching solution at 120°C for 180 minutes. The sodium hydroxide etching solution corrodes the modification zone, and finally forms a chamfer with an inclination of 90° on the side edge of the glass substrate and the front surface or the back surface of the glass substrate; at the same time, the etching solution penetrates from the front surface to the back surface edge, slightly corroding the local back surface edge; 1044、Laser fragmentation: a 10W carbon dioxide laser with a spot diameter of 15mm is used. The laser beam is controlled to accurately scan along the scanning path of step 102 again at a speed of 600mm / s; the alkali-resistant protective ink between the glass substrate and the glass waste is ablated and gasified instantaneously by the laser, and the generated thermal stress completely separates the glass substrate from the glass waste frame.

[0055] 105、Ink removal cleaning: the glass obtained after step 104 is cleaned in an ink removal cleaning solution to remove the alkali-resistant protective ink on the glass. The ink removal cleaning solution is a potassium hydroxide solution.

[0056] The technical features of the above-described embodiments can be combined in any manner. In order to make the description concise, all possible combinations of the technical features in the above-described embodiments are not described, but as long as the combinations of the technical features do not contradict, they should be considered as within the scope of the present disclosure.

[0057] The above embodiments only express several implementation manners of the present application, and the description is more specific and detailed, but it should not be understood as a limitation on the scope of the patent. It should be noted that for ordinary skilled persons in the art, without departing from the concept of the present application, several modifications and improvements can be made, which are within the scope of protection of the present application. Therefore, the protection scope of the patent of the present application should be subject to the appended claims.

Claims

1. A method for chamfering and correcting glass edges, characterized in that: include: A contoured chamfered beam is generated using a laser, utilizing the side line of the glass substrate (1) and the back side of the glass substrate (1) or the front side perpendicular to the glass substrate (1), and then chemical etching is performed. After the chemical etching, a side line of the glass substrate (1) and the back of the glass substrate (1) or a non-perpendicular edge chamfer of the glass substrate (1) are obtained. The offset angle θ of the side line of the glass substrate (1) is measured using an optical microscope. After the side line of the glass substrate (1) after step 102 is symmetrically offset around the X-axis to obtain the correction angle α, the chamfer line is extended by a spatial light modulator to intersect with the offset side line of the glass substrate (1) to obtain the corrected contour beam. The chamfering process is performed based on the modified contour light.

2. The glass edge chamfering correction method according to claim 2, characterized in that: Step 104 includes: 1041. Pretreatment and protection: Alkali-resistant protective ink (2) is screen-printed on the back side of the glass substrate (1) to be processed, and the alkali-resistant protective ink (2) is cured. The front side of the glass substrate (1) is exposed to the subsequent processing environment. 1042. Laser contouring modification: The glass substrate (1) is scanned along the modified contouring beam by a laser to form a scanning path and a continuous modification zone is formed inside the glass substrate. 1043. Chemical etching again: The glass substrate (1) after step 1042 is immersed in an etching solution for chemical etching. The etching solution preferentially corrodes the modified area and then etches the glass substrate along the modified area to initially form a chamfered structure with the correction angle α. 1044. Laser cleaving: Laser II is used to emit a laser beam and control the laser beam to scan along the scanning path I to form scanning path II, so as to simultaneously separate the alkali-resistant protective ink (2) and the glass substrate and glass waste (3).

3. The glass edge chamfering correction method according to claim 1, characterized in that: Step 1044, laser dicing, includes: Ablation protection ink: The energy of the second laser heats, vaporizes and removes the alkali-resistant protection ink on the second scanning path, thereby removing the connection between the glass substrate and the glass waste (3); Thermal stress cleavage: The thermal stress generated by the laser and the microstructure fragility caused by step 1043 and the second chemical etching combine to separate the glass substrate and the glass waste along the modified region and along the etching path of the etching solution.

4. The glass edge chamfering correction method according to any one of claims 1-3, characterized in that: After step 104, step 105, ink removal cleaning, is also included: the glass obtained after step 104 is placed in an ink removal cleaning solution for cleaning to remove the alkali-resistant protective ink (2) on the glass.

5. The glass edge chamfering correction method according to claim 4, characterized in that: The alkali-resistant protective ink (2) is an epoxy resin-type alkali-resistant ink.

6. The glass edge chamfering correction method according to claim 5, characterized in that: The thickness of the alkali-resistant protective ink (2) is 30-50 μm.

7. The glass edge chamfering correction method according to claim 6, characterized in that: The etching solution used in step 1043, the second chemical etching, is a sodium hydroxide or potassium hydroxide solution.

8. The glass edge chamfering correction method according to any one of claims 5-7, characterized in that: The laser is either an infrared laser or an ultrafast laser.

9. The glass edge chamfering correction method according to claim 8, characterized in that: The second laser is a carbon dioxide laser.

10. The glass edge chamfering correction method according to claim 9, characterized in that: The second laser has a power of 10-30W, a scanning speed of 400-800mm / s, and a spot diameter of 14-15mm.

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