Ytterbium ion doped quasi-two-dimensional perovskite near-infrared light-emitting thin film material and preparation method and application thereof

By using a ytterbium ion-doped quasi-two-dimensional perovskite thin film preparation method, the stability and energy transfer efficiency issues of quasi-two-dimensional lead halide perovskite materials have been solved, achieving high-efficiency near-infrared luminescence and improved solar cell efficiency, thus expanding its application in the photovoltaic field.

CN121293970APending Publication Date: 2026-01-09JILIN UNIVERSITY
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Patent Information

Application Number
CN202511415575.4
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-09-30
Publication Date
2026-01-09

AI Technical Summary

Technical Problem

Quasi-two-dimensional lead halide perovskite materials suffer from insufficient chemical, optical, and thermal stability due to ion migration, resulting in low energy transfer efficiency and limiting their application in the photovoltaic field.

Method used

A ytterbium-doped quasi-two-dimensional perovskite thin film preparation method is adopted, which forms a ytterbium-doped quasi-two-dimensional perovskite near-infrared luminescent film on a substrate through a one-step spin coating method. Combined with a specific material layer structure, it can be used for light-emitting diodes and solar cells, optimizing the stability and energy transfer efficiency of the material.

Benefits of technology

It achieves high-efficiency near-infrared emission, improves the luminous efficiency and stability of light-emitting diodes, enhances the light conversion efficiency of solar cells, and broadens the application range of materials in the photovoltaic field.

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Abstract

The invention discloses an ytterbium-ion-doped quasi-two-dimensional perovskite near-infrared light-emitting thin film material and a preparation method and application thereof.According to the method, firstly, an ytterbium-ion-doped quasi-two-dimensional perovskite thin film is prepared, and efficient near-infrared quantum cutting emission can be achieved; the introduction of fluorophenylethylamine bromide can further improve the humidity stability of the material. Cesium ions are partially replaced by formamidine ions, the crystal quality of the film is improved, the phase distribution of the quasi-two-dimensional film is adjusted, the defects of a perovskite material are reduced, the energy transfer efficiency from a perovskite host to ytterbium ions is remarkably improved, the film can be applied to the photovoltaic field as a fluorescent layer and a fluorescent conversion layer, and preparation of high-performance photoelectric devices is achieved.
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