Low-threshold MEMS inertial switch

By using a drive-support beam and a strategy of pre-stored energy at the holding contacts in MEMS inertial switches, the fabrication difficulty and power consumption issues of MEMS inertial switches in low threshold detection are solved. This results in a MEMS inertial switch with low threshold triggering, low power consumption, high sensitivity, and fast switching speed, which is suitable for power-sensitive fields.

CN121331702APending Publication Date: 2026-01-13TSINGHUA UNIVERSITY
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Patent Information

Application Number
CN202511315233.5
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-09-15
Publication Date
2026-01-13

AI Technical Summary

Technical Problem

Existing MEMS inertial switches face challenges in achieving low threshold detection, including increased fabrication difficulty, greater gravitational influence, and structural fragility. Furthermore, using electrical methods to lower the switching threshold introduces additional power consumption, limiting their application potential in power-sensitive fields.

Method used

By employing a strategy of pre-stored energy in the drive-support beam and holding contacts, the mass block is moved to the holding position via electrostatic drive. The threshold acceleration is determined by the difference between the contact force and the elastic restoring force, thereby achieving low threshold triggering and rapid switching and avoiding additional energy consumption.

Benefits of technology

A miniaturized MEMS inertial switch with low threshold triggering, low power consumption, high sensitivity, fast switching speed, and reliable structure has been realized, which is suitable for power-sensitive fields.

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Abstract

The invention relates to the technical field of micro electro mechanical system devices, and discloses a low-threshold MEMS inertial switch. A low threshold MEMS inertial switch includes an anchor region, a mass, a holding contact, a switch contact, a drive-support beam. The anchor areas are oppositely arranged at intervals in the x direction; the mass block is arranged between the anchor areas and is spaced from the anchor areas; the holding contact is arranged in the mass block; the switch contact is arranged in the mass block and is separated from the holding contact in the y direction; the driving-supporting beams are distributed on the two opposite sides of the mass block and connected with the anchor area so as to support and drive the mass block to move in the y direction. The switch provided by the invention has the advantages of low threshold triggering, low power consumption, high sensitivity, high switching speed, reliable structure and miniaturization.
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Description

TECHNICAL FIELD

[0001] The present application relates to the field of micro-electro-mechanical system (MEMS) devices, and in particular to a low threshold MEMS inertial switch. BACKGROUND

[0002] A MEMS inertial switch is a micro-mechanical switch manufactured using micro-nano technology, and its basic principle is to use the inertial force generated by a microstructure under external acceleration to realize the switching of the switch state. The MEMS inertial switch in the prior art usually uses a mass block suspended by a mechanical spring as a sensitive structure. When the external acceleration exceeds the set threshold, the mass block generates displacement and drives the switch contact to change state, thereby realizing the detection and response of the external acceleration signal. Such a switch has the advantages of simple structure, small size, low power consumption, fast response speed, and is applied in the fields of device health monitoring, automobile safety systems, smart phones, etc.

[0003] However, in the prior art, there are challenges in realizing low threshold detection for MEMS inertial switches. If the conventional spring-mass structure needs to reduce the trigger threshold, it usually needs to increase the mass block volume or reduce the spring stiffness, but this will cause problems such as increased processing difficulty, increased gravity influence, and fragile structure prone to damage. Using electrostatic or electromagnetic driving and other electrical means to reduce the switch threshold by continuously powering the driver will introduce significant additional power consumption, limiting the application potential of such switches in power-sensitive fields. SUMMARY

[0004] The present application aims to at least partially solve one of the technical problems in the related art. To this end, one object of the present application is to provide a low threshold MEMS inertial switch with the advantages of low threshold triggering, low power consumption, high sensitivity, fast switching speed, reliable structure, and miniaturization.

[0005] A low threshold MEMS inertial switch according to an embodiment of the present application comprises: an anchor region, the anchor region being arranged at a relative interval in the x direction; a mass block, the mass block being arranged between the anchor regions and having a spacing from the anchor regions; a holding contact, the holding contact being arranged in the mass block; a switch contact, the switch contact being arranged in the mass block and spaced apart from the holding contact in the y direction; a driving-support beam, the driving-support beam being distributed on opposite sides of the mass block and connected with the anchor regions to support and drive the mass block to move in the y direction; When the mass block is in an initial position, the holding contact and the switch contact are both in a non-contact state; When the drive-support beam drives the mass block to the holding position, the holding contact realizes the stable holding of the mass block in the holding position through the contact force between its own contacts, and the drive-support beam stores elastic potential energy. At this time, the switch contact is in the open state. When the mass block is in the holding position, the switch contact switches to the conducting state after the inertial force acting on the mass block causes the drive-support beam to release the pre-stored elastic energy.

[0006] In this embodiment of the invention, the low-threshold MEMS inertial switch operates by applying a one-time electrostatic driving force to the drive-support beam, causing the mass block to move from its initial position to the holding position along the y-direction. The drive-support beam connected to the mass block undergoes elastic deformation, generating elastic potential energy. Upon removal of the electrostatic driving force, the mass block remains stably held in this holding position by the contact force between the contacts themselves. The mass block does not return, and the switch contacts are in an open state, placing the entire low-threshold MEMS inertial switch in a ready-to-trigger state. When the switch is subjected to an external acceleration impact, the mass block generates inertial force. When the sum of this inertial force and the elastic restoring force of the drive-support beam exceeds the contact force of the holding contacts, the holding contacts release the holding state, releasing the elastic potential energy stored in the drive-support beam, which is converted into the kinetic energy of the mass block. The mass block returns along the y-direction to the accelerated conduction position. At this point, the switch contacts are in a conduction state, the circuit is connected, and a switching signal is output.

[0007] The low-threshold MEMS inertial switch based on an energy pre-storage strategy of this invention has the following advantages: Energy is pre-stored through the drive-support beam and holding contacts, and the threshold acceleration is determined by the difference between the contact force and the elastic restoring force, thus achieving low-threshold triggering. When the inertial force acting on the mass block reaches the trigger threshold, the energy pre-stored in the drive-support beam 1 is released, thereby achieving rapid switching of the switch state using minimal energy. This means that no additional signal processing circuitry is required to sensitively capture acceleration signals in the environment and generate a stable trigger signal using the mass block. Furthermore, no additional energy is consumed in the standby state awaiting triggering; energy is only consumed when entering the standby state from the initial state, resulting in low power consumption. In summary, the low-threshold MEMS inertial switch of this invention has significant advantages such as low-threshold triggering, low power consumption, high sensitivity, fast switching speed, reliable structure, and miniaturization, providing a more reliable, accurate, and energy-efficient solution for MEMS inertial switches.

[0008] In some embodiments, when the mass block is in the holding position, when the inertial force acting on the mass block reaches a threshold, the drive-support beam releases the pre-stored elastic energy, and the switch contact switches to the conducting state.

[0009] In some embodiments, the drive-support beam includes a movable beam, a forward drive electrode, and a reverse drive electrode; the two ends of the movable beam are respectively connected to the anchor area and the mass block, and the forward drive electrode and the reverse drive electrode are respectively arranged on opposite sides of the movable beam.

[0010] In some embodiments, the movable beam is a spring.

[0011] In some embodiments, the drive-support beam is arranged at both ends of each of the opposite sides of the mass block.

[0012] In some embodiments, the mass block defines a first space and a second space spaced apart in the y direction; The retaining contacts are arranged in the first space, including a first retaining contact and a second retaining contact. The first retaining contact is fixed in the first space and does not contact the wall of the first space, while the second retaining contact is fixed to the wall of the first space. The switch contacts are arranged in the second space, including a first switch contact and a second switch contact. The first switch contact is fixed in the second space and does not contact the wall of the second space, while the second switch contact is fixed to the wall of the second space.

[0013] In some embodiments, in the initial position, the first holding contact is located on one side of the second holding contact in the y-direction, the first switch contact is located on one side of the second switch contact in the y-direction, and the direction from the second holding contact to the first holding contact and the direction from the second switch contact to the first switch contact are the same; in the holding position, in the y-direction, the first holding contact and the second holding contact are interlocked, the first switch contact is located on the other side of the second switch contact and has a gap with the second switch contact.

[0014] In some embodiments, the cross-sectional shape of both the first holding contact and the second holding contact is semi-circular; both the first switch contact and the second switch contact are wedge-shaped; and in the y-direction, in the initial position, the inclined surfaces of the first switch contact and the second switch contact are opposite to each other, and when holding the holding state and the conducting state, the inclined surfaces of the first switch contact and the second switch contact are opposite to each other.

[0015] In some embodiments, in the initial position, the distance between the first holding contact and the second holding contact is 15 μm to 19 μm, and the distance between the second switch contact and the second switch contact is 10 μm to 15 μm.

[0016] In some embodiments, the anchor region is connected to the underlying silicon substrate through the buried oxide layer of the SOI silicon wafer.

[0017] Additional aspects and advantages of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. Attached Figure Description

[0018] Figure 1 This is a schematic diagram of a low-threshold MEMS inertial switch according to an embodiment of the present invention; Figure 2a This is a schematic diagram of the initialization process of a low-threshold MEMS inertial switch according to an embodiment of the present invention; Figure 2b yes Figure 2a Enlarged view of point A in the middle; Figure 3a This is a schematic diagram of the open state of a low-threshold MEMS inertial switch according to an embodiment of the present invention; Figure 3b yes Figure 3a Enlarged view of point B in the middle; Figure 3c yes Figure 3a Enlarged view of point C in the middle; Figure 4a This is a schematic diagram of the conduction state of a low-threshold MEMS inertial switch according to an embodiment of the present invention; Figure 4b yes Figure 4a Enlarged view of point D in the middle; Figure 4c yes Figure 4a Enlarged diagram of point E in the middle.

[0019] Figure Labels A low-threshold MEMS inertial switch 1000 includes an anchor area 5; a mass block 2; a holding contact 3; a first holding contact 301; a second holding contact 302; a switch contact 4; a first switch contact 401; a second switch contact 402; a drive-support beam 1; a movable beam 102; a forward drive electrode 101; and a reverse drive electrode 103. Detailed Implementation

[0020] Embodiments of the present invention are described in detail below, examples of which are illustrated in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and intended to explain the present invention, and should not be construed as limiting the present invention.

[0021] The following is combined Figures 1 to 4c The low-threshold MEMS inertial switch 1000 of the present invention is described below.

[0022] like Figures 1 to 4c As shown, the low-threshold MEMS inertial switch 1000 according to an embodiment of the present invention includes an anchor area 5, a mass block 2, a holding contact 3, a switch contact 4, and a drive-support beam 1.

[0023] Anchor regions 5 are arranged at relative intervals in the x-direction of the low-threshold MEMS inertial switch 1000; anchor regions 5 are connected to the underlying silicon substrate to provide mechanical support.

[0024] Mass block 2 is positioned between anchor areas 5 and is spaced apart from anchor areas 5; mass block 2 is sensitive to external acceleration and its area size ensures a low acceleration threshold.

[0025] The holding contact 3 is located inside the mass block 2; the holding contact 3 is used to stabilize the mass block 2 by means of the contact force between its own contacts in the holding state, and to allow the drive-support beam 1 to store elastic potential energy.

[0026] Switch contact 4 is disposed within mass block 2 and spaced apart from holding contact 3 in the y-direction; switch contact 4 is used for switching of the low-threshold MEMS inertial switch 1000. Switch contact 4 is used to provide a stable mechanical contact state transition after mass block 2 is triggered by acceleration, and output a reliable switching signal.

[0027] The drive-support beam 1 is distributed on opposite sides of the mass block 2 and connected to the anchor area 5 to support and drive the mass block 2 to move along the y direction; the drive-support beam 1 is used to support and drive the mass block to move, specifically the drive-support beam 1 drives the mass block 2 to move along the y direction by electrostatic drive; at the same time, the elastic structure of the drive-support beam 1 has the function of pre-stored energy.

[0028] like Figure 1 As shown, when the mass block 2 is in the initial position, both the holding contact 3 and the switch contact 4 are in a non-contact state, that is, both the holding contact 3 and the switch contact 4 are in the initial position. The drive-support beam 1 is in the initial position, without elastic deformation and without pre-stored elastic potential energy.

[0029] like Figures 3a to 3c As shown, when the drive-support beam 1 drives the mass block 2 to the holding position, the holding contact 3 remains in a holding state due to the contact force between its own contacts (e.g., Figure 3c (As shown) This ensures that the mass block 2 is stably held in its position, and that the drive-support beam 1 has pre-stored elastic potential energy. At this time, the switch contact 4 is in the open state (as shown). Figure 3b (As shown).

[0030] Specifically, by providing electrostatic driving force to the drive-support beam 1, the drive mass 2 moves from its initial position to its holding position in the y-direction. At this time, the holding contact 3 itself possesses contact force between contacts, i.e., static friction. Removing the electrostatic driving force from the drive-support beam 1, the holding contact 3 maintains the mass 2 stably in the holding position solely through its own contact force. Simultaneously, in the holding position, the drive-support beam 1 undergoes elastic deformation, pre-storing elastic potential energy converted from electrostatics, causing the mass 2 to tend to return to its initial state. Meanwhile, the switch contact 4 is in the open state, and the entire low-threshold MEMS inertial switch 1000 enters a standby state (i.e., a state awaiting triggering). The process of the low-threshold MEMS inertial switch 1000 entering the standby state from its initial state is the initialization process, and its power consumption is low.

[0031] When mass block 2 is in the holding position, such as Figures 4a to 4c As shown, when the inertial force acting on the mass block 2 causes the drive-support beam 1 to release its pre-stored elastic energy (as shown in the figure), Figure 4c As shown), switch contact 4 switches to the ON state (as shown). Figure 4b (As shown). Specifically, when the sum of the inertial force and the elastic restoring force of the drive-support beam 1 is greater than the contact force between the holding contacts 3, the holding contacts 3 release the holding state, the drive-support beam 1 releases the pre-stored elastic energy, causing the mass block 2 to return along the y-direction to the conducting position between the initial position and the holding position, so that the switch contact 4 forms a conducting state.

[0032] When the low-threshold MEMS inertial switch 1000 of this embodiment is used, a one-time electrostatic driving force is applied to the drive-support beam 1 to move the mass block 2 from the initial position to the holding position along the y-direction. The drive-support beam 1 connected to the mass block 2 undergoes elastic deformation and generates elastic potential energy. When the electrostatic driving force is removed, the mass block 2 is stably held in the holding position by the contact force between the contacts of the holding contact 3 itself. The mass block 2 will not return, and the switch contact 4 is in the open state. The entire low-threshold MEMS inertial switch 1000 is in the ready-to-trigger state. When the switch is subjected to an external acceleration impact, the mass block 2 generates an inertial force. When the sum of this inertial force and the elastic restoring force of the drive-support beam 1 exceeds the contact force of the holding contact 3, the holding contact 3 releases the holding state, the elastic potential energy stored in the drive-support beam 1 is released, and it is converted into the kinetic energy of the mass block 2. The mass block 2 will return to the accelerated motion conducting position along the y-direction. At this time, the switch contact 4 is in the conducting state, the circuit is connected, and a switching signal is output.

[0033] The low-threshold MEMS inertial switch 1000 based on an energy pre-storage strategy of this invention has the following advantages: Energy is pre-stored through the drive-support beam 1 and the holding contact 3, and the threshold acceleration is determined by the difference between the contact force and the elastic restoring force, thus achieving low-threshold triggering. When the inertial force acting on the mass block 2 reaches the trigger threshold, the energy pre-stored in the drive-support beam 1 is released, thereby achieving rapid switching of the switch state using minimal energy. This means that no additional signal processing circuitry is required to sensitively capture acceleration signals in the environment and generate a stable trigger signal using the mass block 2. Furthermore, no additional energy is consumed in the standby state awaiting triggering; energy is only consumed when entering the standby state from the initial state, resulting in low power consumption. In summary, the low-threshold MEMS inertial switch 1000 of this invention has significant advantages such as low-threshold triggering, low power consumption, high sensitivity, fast switching speed, reliable structure, and miniaturization, providing a more reliable, accurate, and energy-efficient solution for MEMS inertial switches.

[0034] In some embodiments, when the mass block 2 is in the holding position, when the inertial force acting on the mass block 2 reaches a threshold, the drive-support beam 1 releases pre-stored elastic energy, and the switch contact 4 switches to the conducting state. Here, the threshold is a trigger threshold, determined by the difference between the contact force and the elastic restoring force, using the pre-stored energy of the drive-support beam 1 and the holding contact 3, to achieve low-threshold triggering. Therefore, without additional signal processing circuitry, the mass block 2 can sensitively capture acceleration signals in the environment and generate a stable trigger signal, enabling rapid switching.

[0035] In some embodiments, such as Figure 1 As shown, the drive-support beam 1 includes a movable beam 102, a forward drive electrode 101, and a reverse drive electrode 103. The two ends of the movable beam 102 are connected to the anchor area 5 and the mass block 2, respectively, supporting the mass block 2 on the anchor area 5. The forward drive electrode 101 and the reverse drive electrode 103 are respectively arranged on opposite sides of the movable beam 102. The movable beam 102 is elastic, providing a mechanical restoring force for the mass block 2 to return to its equilibrium position, and can store elastic potential energy through its own elastic deformation. The function of the forward drive electrode 101 is to apply an electrostatic force in the +y direction to the movable beam 102, causing the movable beam 102 to drive the mass block 2 to move in the +y direction; when the forward drive electrode 101 is working, the reverse drive electrode 103 is not working. The function of the reverse drive electrode 103 is to apply an electrostatic force in the -y direction to the movable beam 102. During the initialization process of the low-threshold MEMS inertial switch 1000, the reverse drive electrode 103 can use the electrostatic driving force to unlock the low-threshold MEMS inertial switch 1000 instead of the inertial force. The magnitude of the acceleration threshold required to unlock the low-threshold MEMS inertial switch 1000 is determined by the magnitude of the driving voltage.

[0036] In some embodiments, the movable beam 102 is a spring. The spring supports the mass block 2, is elastic, and can be used to pre-store energy. Thus, only one power-on is needed to the low-threshold MEMS inertial switch 1000 to give the movable beam 102 elastic potential energy and maintain it; then the power is cut off, putting the low-threshold MEMS inertial switch 1000 into a standby state. In this way, the mass block 2 can sensitively capture acceleration signals from the environment and generate a stable trigger signal without the need for additional signal processing circuitry, and no additional energy is consumed in the standby state while waiting for triggering.

[0037] In some embodiments, a drive-support beam 1 is arranged at both ends of each of the opposite sides of the mass block 2. This allows for balanced support of the mass block 2. This arrangement effectively constrains all unnecessary degrees of freedom of motion of the mass block 2 except for translation along the Y direction.

[0038] In some embodiments, such as Figures 1 to 4c As shown, mass block 2 defines a first space and a second space that are spaced apart in the y direction.

[0039] The retaining contact 3 is arranged in the first space, including a first retaining contact 301 and a second retaining contact 302. The first retaining contact 301 is fixed in the first space and does not contact the wall of the first space, and the second retaining contact 302 is fixed on the wall of the first space.

[0040] The switch contact 4 is arranged in the second space, including a first switch contact 401 and a second switch contact 402. The first switch contact 401 is fixed in the second space and does not contact the wall of the second space, while the second switch contact 402 is fixed on the wall of the second space.

[0041] Thus, when the mass block 2 moves, the first holding contact 301 and the first switch contact 401 remain stationary, while the second holding contact 302 and the second switch contact 402 move synchronously with the mass block 2. When the mass block 2 is in its initial position, the first holding contact 301 and the second holding contact 302 are spaced apart, meaning the holding contact 301 is in a non-holding state, and the first switch contact 401 and the second switch contact 402 are spaced apart, meaning the switch contact 402 is in an open state.

[0042] When the drive-support beam 1 drives the mass block 2 to the holding position, the second holding contact 302 moves to the first holding contact 301 and engages with the first holding contact 301, so that the holding contact 3 generates contact force between the contacts, thereby achieving stable holding of the mass block 2 in the holding position and allowing the drive-support beam 1 to store elastic potential energy. The second switch contact 402 follows the mass block 2, passes the first switch contact 401, and then separates from the first switch contact 401, that is, the switch contact 4 is in the open state. When mass block 2 moves from the holding position to the conducting position, the first holding contact 301 and the first switch contact 401 remain stationary, while the second holding contact 302 and the second switch contact 402 move synchronously with mass block 2. The second holding contact 302 disengages from the first holding contact 301, and the holding contact 3 moves to a non-holding state (e.g., Figure 4c (As shown); the second switch contact 402 moves to the first switch contact 401 and engages with the first switch contact 401, making the switch contact 4 in a conductive state (as shown). Figure 4b (As shown).

[0043] In some embodiments, in the initial position, the first holding contact 301 is located on one side of the second holding contact 302 in the y-direction, and the first switch contact 401 is located on one side of the second switch contact 402 in the y-direction, and the direction from the second holding contact 302 to the first holding contact 301 is the same as the direction from the second switch contact 402 to the first switch contact 401; as Figure 3a As shown, in the holding position, in the y-direction, the first holding contact 301 and the second holding contact 302 are interlocked, and the first switch contact 401 is located on the other side of the second switch contact 402 and is spaced apart from the second switch contact 402. Specifically, in the holding position, the first holding contact 301 and the second holding contact 302 are in stable contact and interlocked, which is beneficial for the self-holding of the mass block 2 and for maintaining its position after the removal of the electrostatic driving force. In the conducting position, the first switch contact 401 and the second switch contact 402 are interlocked, which is beneficial for the stable contact between the first switch contact 401 and the second switch contact 402, thereby ensuring effective switching of the low-threshold MEMS inertial switch 1000.

[0044] In some embodiments, such as Figure 1 As shown, the cross-sectional shape of the first holding contact 301 and the second holding contact 302 is semi-circular; the first switch contact 401 and the second switch contact 402 are both wedge-shaped; and in the y direction, in the initial position, the inclined surface of the first switch contact 401 and the inclined surface of the second switch contact 402 are opposite to each other, and in the open and closed states, the inclined surface of the first switch contact 401 and the inclined surface of the second switch contact 402 are opposite to each other.

[0045] The first switch contact 401 and the second switch contact 402 are wedge-shaped, which guides the contact force to gradually increase, avoiding bouncing and wear caused by rigid collisions. In the ON state, the two contacts eventually make contact with flat surfaces. This results in a large contact area and the highest mechanical stability. This ensures effective switching of the low-threshold MEMS inertial switch 1000.

[0046] The arc-shaped contact surface allows the second holding contact 302 and the first holding contact 301 to have a slight self-alignment adjustment capability at the moment of contact; compared with the friction of two planes squeezing each other, the friction of the arc-shaped point contact is smaller, and the required external driving force and inertial force are also smaller, which helps to achieve a low threshold; the arc-shaped contact surface also makes the force applied when entering and leaving the holding state equal, which facilitates calibration.

[0047] In some embodiments, in the initial position, the distance between the first holding contact 301 and the second holding contact 302 is 15μm to 19μm, and the distance between the first switching contact 401 and the second switching contact 402 is 10μm to 15μm. The 15μm to 19μm spacing of the holding contacts 3 is a balance point determined after comprehensively considering the efficiency of the electrostatic driving force and the feasibility of the manufacturing process. This range ensures that sufficient electrostatic force can be generated to drive the mass block 2 to move and lock with the holding contacts 3 when a reasonable and low driving voltage is applied. The 10μm to 15μm spacing of the switching contacts 4 is mainly to ensure reliable electrical contact after triggering.

[0048] In some embodiments, the anchor region 5 is connected to the underlying silicon substrate through the buried oxide layer of the SOI silicon wafer. This allows for mechanical connection but electrical insulation between the anchor region 5 and the underlying silicon substrate, and the switching state of the low-threshold MEMS inertial switch 1000 is determined by the on / off state of the switch contact 4. Using the above-described process for the anchor region 5 allows for precise control of the spacing between the retaining contact 3 and the switch contact 4, while also offering the advantage of a simple process flow.

[0049] Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention. Those skilled in the art can make changes, modifications, substitutions and variations to the above embodiments within the scope of the present invention.

Claims

1. A low-threshold MEMS inertial switch, characterized in that, include: Anchor zones, which are spaced apart from each other in the x-direction; Mass blocks, wherein the mass blocks are disposed between the anchor areas and are spaced apart from the anchor areas; A retaining contact is disposed within the mass block; A switch contact, wherein the switch contact is disposed within the mass block and spaced apart from the holding contact in the y direction; A drive-support beam is provided, which is distributed on opposite sides of the mass block and connected to the anchor area to support and drive the mass block to move in the y direction. When the mass block is in its initial position, both the holding contact and the switch contact are in a non-contact state. When the drive-support beam drives the mass block to the holding position, the holding contact realizes the stable holding of the mass block in the holding position through the contact force between its own contacts, and the drive-support beam stores elastic potential energy. At this time, the switch contact is in the open state. When the mass block is in the holding position, the switch contact switches to the conducting state after the inertial force acting on the mass block causes the drive-support beam to release the pre-stored elastic energy.

2. The low-threshold MEMS inertial switch according to claim 1, characterized in that, When the mass block is in the holding position, when the inertial force acting on the mass block reaches a threshold, the drive-support beam releases the pre-stored elastic energy, and the switch contact switches to the conducting state.

3. The low-threshold MEMS inertial switch according to claim 1, characterized in that, The drive-support beam includes a movable beam, a forward drive electrode, and a reverse drive electrode; the two ends of the movable beam are respectively connected to the anchor area and the mass block, and the forward drive electrode and the reverse drive electrode are respectively arranged on opposite sides of the movable beam.

4. The low-threshold MEMS inertial switch according to claim 3, characterized in that, The movable beam is a spring.

5. The low-threshold MEMS inertial switch according to claim 3, characterized in that, The drive-support beam is arranged at both ends of each of the opposite sides of the mass block.

6. The low-threshold MEMS inertial switch according to any one of claims 1-5, characterized in that, The mass block defines a first space and a second space spaced apart in the y direction; The retaining contacts are arranged in the first space, including a first retaining contact and a second retaining contact. The first retaining contact is fixed in the first space and does not contact the wall of the first space, while the second retaining contact is fixed to the wall of the first space. The switch contacts are arranged in the second space, including a first switch contact and a second switch contact. The first switch contact is fixed in the second space and does not contact the wall of the second space, while the second switch contact is fixed to the wall of the second space.

7. The low-threshold MEMS inertial switch according to claim 6, characterized in that, In the initial position, the first holding contact is located on one side of the second holding contact in the y-direction, and the first switch contact is located on one side of the second switch contact in the y-direction, with the direction from the second holding contact to the first holding contact and the direction from the second switch contact to the first switch contact being the same; in the holding position, in the y-direction, the first holding contact and the second holding contact are interlocked, and the first switch contact is located on the other side of the second switch contact and has a gap with the second switch contact.

8. The low-threshold MEMS inertial switch according to claim 6, characterized in that, Both the first holding contact and the second holding contact have semi-circular cross-sectional shapes; both the first switch contact and the second switch contact are wedge-shaped; and in the y-direction, in the initial position, the inclined surfaces of the first switch contact and the second switch contact are opposite to each other, and when maintaining the holding state and the conducting state, the inclined surfaces of the first switch contact and the second switch contact are opposite to each other.

9. The low-threshold MEMS inertial switch according to claim 6, characterized in that, In the initial position, the distance between the first holding contact and the second holding contact is 15μm~19μm, and the distance between the second switch contact and the second switch contact is 10μm~15μm.

10. The low-threshold MEMS inertial switch according to any one of claims 1-5, characterized in that, The anchor area is connected to the underlying silicon substrate through the buried oxide layer of the SOI silicon wafer.

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