Signal amplification circuit, ultra wide band amplifier and electronic equipment

Abstract

The invention provides a signal amplification circuit, an ultra-wideband amplifier and electronic equipment, and relates to the technical field of amplifiers. The signal amplification circuit comprises: an input transmission line for receiving an input signal; the first end of each amplification unit is connected with the input transmission line, and every two adjacent amplification units are connected through a stabilizing module; wherein the amplifying unit is used for amplifying the signal, and the stabilizing module at least comprises a stabilizing resistor; the second end of each amplification unit is connected with the output transmission line; wherein the output transmission line is used for outputting a signal amplified by the amplification unit. The stability of the signal amplification circuit can be improved, the signal amplification circuit can stably work in the terahertz wave band, and the working frequency application range of the signal amplification circuit is widened.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of amplifier technology, and in particular to a signal amplification circuit, an ultra-wideband amplifier and an electronic device. BACKGROUND

[0002] Modern wireless electronic systems play a very important role in many fields. With the development of wireless communication technology, many applications have requirements for the operating bandwidth of wireless communication systems, and a wideband multifunctional radio frequency system can simultaneously meet the needs of communication, detection, electronic warfare and other requirements. The corresponding radio frequency transceiver front end needs to have characteristics such as ultra-wideband and large dynamic range. The bandwidth of the ultra-wideband amplifier can exceed 10 octaves, and it has a wide range of applications in the field of radio frequency front-end technology.

[0003] Terahertz (THz) waves are electromagnetic waves with a frequency in the range of 0.1-10 THz, where 1 THz = 1000 GHz. Terahertz waves occupy an important position in the electromagnetic wave spectrum and are an internationally recognized important cross-frontier field.

[0004] In related technologies, ultra-wideband amplifiers rarely involve the terahertz band. One of the main reasons is that the frequency of the terahertz band is relatively high, and the relative bandwidth is large. The ultra-wideband amplifier is prone to self-excitation instability in high-frequency circuit design. The stability directly determines whether the ultra-wideband amplifier is successfully designed. If the ultra-wideband amplifier cannot work stably, the ultra-wideband amplifier may evolve into an oscillation circuit, and its gain will tend to infinity. At this time, other design indicators of the ultra-wideband amplifier become meaningless.

[0005] Therefore, it is a design difficulty for the ultra-wideband amplifier circuit to ensure the stability of the circuit in the full frequency band with a relative bandwidth of more than 100%. It is necessary to ensure that the ultra-wideband amplifier can work stably in the full frequency band, prevent the ultra-wideband amplifier from being self-excited, and prevent the ultra-wideband amplifier from being unable to work normally or even burning the circuit. SUMMARY

[0006] Embodiments of the present application provide a signal amplification circuit, an ultra-wideband amplifier and an electronic device to solve the problem of low stability of the ultra-wideband amplifier in the full frequency band in related technologies.

[0007] In a first aspect, embodiments of the present application provide a signal amplification circuit, comprising: an input transmission line configured to receive an input signal; a plurality of amplification units, a first end of each amplification unit being connected to the input transmission line, and two adjacent amplification units being connected through a stabilization module; wherein the amplification unit is configured to amplify the signal, and the stabilization module comprises at least one stabilization resistor; An output transmission line is connected with the second end of each amplification unit respectively, and the output transmission line is used to output the signal amplified by the amplification unit.

[0008] In the embodiment, the adjacent amplification units are connected through the stabilizing module, and the stabilizing module at least includes a stabilizing resistor. When the current of a certain amplification unit changes, the current of the adjacent amplification unit is relatively stable, and the unbalanced current formed by the two can be transmitted through the stabilizing resistor to indirectly adjust the effective working voltage of the amplification unit, so that the currents of the multiple amplification units tend to be balanced, the performance fluctuation of the signal amplification circuit caused by the current change of a single amplification unit is effectively avoided, the self-excitation phenomenon is avoided, the stability of the signal amplification circuit is improved, the signal amplification circuit can stably work in the terahertz wave band, and the working frequency application range is improved.

[0009] In a possible implementation, the amplification unit includes a transistor, the gate of the transistor is the first end of the amplification unit and is connected with the input transmission line, the drain of the transistor is the second end of the amplification unit and is connected with the output transmission line, and the source of the transistor is grounded. The drain of the two adjacent transistors is connected through the stabilizing module.

[0010] In the embodiment, the drains of the adjacent transistors are connected through the stabilizing module, so that the stabilizing module can directly act on the drain current. When the drain current of a certain transistor changes, the unbalanced current formed between the drain of the transistor and the drain of the adjacent transistor can be directly transmitted through the stabilizing module, the adjustment path of the unbalanced current is shortened, and the drain current balance efficiency is improved.

[0011] In a possible implementation, a first microstrip line is arranged between the gate of the transistor and the input transmission line, and a second microstrip line is arranged between the drain of the transistor and the output transmission line.

[0012] In the embodiment, the impedance matching between the gate of the transistor and the input transmission line is realized based on the first microstrip line, and the impedance matching between the drain of the transistor and the output transmission line is realized based on the second microstrip line, so that the signal reflection loss is effectively reduced.

[0013] In a possible implementation, the signal amplification circuit further includes a first resistor and a second resistor. The first end of the first resistor is grounded, and the second end is connected with the first microstrip line and the input transmission line respectively. The first end of the second resistor is grounded, and the second end is connected with the second microstrip line and the output transmission line respectively.

[0014] In the embodiment, the first resistor is used to absorb the residual signal reaching the end of the input transmission line to prevent the reflection of the residual signal, wherein the end of the input transmission line is the end of the input transmission line connected with the first resistor. The second resistor is used to absorb the reflected signal due to impedance mismatch to avoid the formation of standing wave of the reflected signal. In addition, the connection node of the first microstrip line and the input transmission line is taken as an input port, and the first resistor provides a direct current grounding path for the input port, which is conducive to stabilizing the direct current potential of the input port and avoiding the direct current signal on the input transmission line or the first microstrip line from interfering with the gate voltage of the transistor to ensure the normal amplification of the transistor. Similarly, the connection node of the second microstrip line and the output transmission line is taken as an output port, and the second resistor is conducive to stabilizing the direct current potential of the output port and avoiding the direct current fluctuation on the output transmission line or the second microstrip line from affecting the drain voltage of the transistor, thereby improving the stability of the signal amplification circuit.

[0015] In a possible implementation, the signal amplification circuit further comprises a plurality of first inductors and a plurality of second inductors. The two adjacent first microstrip lines are connected through the input transmission line and the first inductor. The two adjacent second microstrip lines are connected through the output transmission line and the second inductor.

[0016] In the embodiment, the first inductor and the second inductor can form an artificial transmission line together with the parasitic capacitance of the transistor, and the required characteristic impedance can be obtained by flexibly designing the inductance values of the first inductor and the second inductor.

[0017] In a possible implementation, the second microstrip line comprises a first sub-microstrip line and a second sub-microstrip line, and the characteristic impedances of the first sub-microstrip line and the second sub-microstrip line are different.

[0018] In the embodiment, the combination of the sub-microstrip lines with different characteristic impedances can better realize the matching of the characteristic impedances of the transistor drain and the output transmission line and reduce the signal reflection loss.

[0019] In a possible implementation, the stabilizing module further comprises an inductor connected in parallel with the stabilizing resistor or a capacitor connected in series with the stabilizing resistor.

[0020] In the embodiment, when the stabilizing module comprises the inductor connected in parallel with the stabilizing resistor, the inductor and the stabilizing resistor can form a high-frequency compensation network based on the parasitic parameters of the inductor, thereby further improving the stability. When the stabilizing module comprises the capacitor connected in series with the stabilizing resistor, the capacitor can suppress the direct current coupling between adjacent amplification units to avoid the imbalance of the drain current caused by the direct current potential deviation, thereby improving the stability of the signal amplification circuit.

[0021] In a possible implementation, the stable resistor is a resistor with adjustable resistance.

[0022] In this embodiment, the resistance of the stable resistor is adjustable, so the resistance of the stable resistor can be flexibly adjusted according to the actual working state of the signal amplification circuit, and then the stability of the signal amplification circuit is adjusted, so that the signal amplification circuit can reach a better stable state under different working conditions. In addition, when the working environment of the signal amplification circuit changes, the parameters of the signal amplification circuit may change, at this time, the resistance of the stable resistor can be adjusted to maintain the stability of the signal amplification circuit, and the environmental adaptability is improved.

[0023] In a second aspect, the embodiments of the present application provide an ultra-wideband amplifier, including the signal amplification circuit of any one of the first aspect.

[0024] In a third aspect, the embodiments of the present application provide an electronic device, including the ultra-wideband amplifier of the second aspect.

[0025] It can be understood that the beneficial effects of the above-mentioned second aspect to the third aspect can be referred to the related description in the first aspect, which will not be repeated here.

[0026] It should be understood that the above general description and the following detailed description are only exemplary and explanatory, and cannot limit the present specification. BRIEF DESCRIPTION OF DRAWINGS

[0027] Figure 1 is a structural schematic diagram of a signal amplification circuit provided by the embodiments of the present application Figure One ; Figure 2 is a comparative schematic diagram of the stability of a signal amplification circuit provided by the embodiments of the present application Figure 3 is a structural schematic diagram of a signal amplification circuit provided by the embodiments of the present application Figure Two . DETAILED DESCRIPTION

[0028] In order to make the person skilled in the art better understand the present scheme, the technical solutions in the embodiments of the present scheme will be clearly described below in conjunction with the drawings in the embodiments of the present scheme. Obviously, the described embodiments are part of the embodiments of the present scheme, not all. Based on the embodiments in the present scheme, all other embodiments obtained by those of ordinary skill in the art without creative labor shall belong to the scope of protection of the present scheme.

[0029] The terms "including", "comprising" and any other variant within the descriptions and claims of the present application and the above-mentioned drawings mean "including but not limited to", and are intended to cover a non-exclusive inclusion, and are not limited to the examples listed in the text. In addition, the terms "first" and "second" and the like are used to distinguish different objects, and are not used to describe a specific order.

[0030] In the related art, the THz band not only has high frequency characteristics, but also has a relative bandwidth significantly larger than the conventional microwave or millimeter wave band, which brings unique challenges to the high-frequency circuit design of the ultra-wideband amplifier. In this band, the parasitic parameters of the active device of the amplifier, the electromagnetic coupling between the transmission lines, and the impedance mismatch within the wide frequency band will be further amplified, which is easy to cause circuit self-oscillation, resulting in unstable working state of the amplifier.

[0031] Stability is the core prerequisite for the design of the ultra-wideband amplifier, and directly determines the feasibility and practicality of the entire design scheme. From the working principle of the circuit, if the amplifier cannot maintain a stable working state, its closed-loop gain will break through the critical threshold, and the circuit property will change from amplification to oscillation. At this time, the gain of the amplifier will show an uncontrolled growth trend, completely deviating from the design target, and the key indicators such as noise figure, linearity, and bandwidth flatness, which are originally optimized, will lose their practical application value because the circuit loses its normal amplification function, ultimately leading to the failure of the entire amplifier design.

[0032] In order to improve the stability of the ultra-wideband amplifier in the full frequency band, in the embodiments of the present application, for the signal amplification circuit in the ultra-wideband amplifier, a stabilizing module is added between any two adjacent amplification units included in the signal amplification circuit. The stabilizing module at least includes a stabilizing resistor. When the current of a certain amplification unit changes, due to the relatively stable current of the adjacent amplification unit, the unbalanced current formed by the two can be transmitted through the stabilizing resistor, indirectly adjusting the effective working voltage of the amplification unit, so that the currents of the multiple amplification units tend to be balanced, thereby effectively avoiding the performance fluctuation of the signal amplification circuit caused by the current change of a single amplification unit, and the phenomenon of self-excitation, improving the stability, so that the signal amplification circuit can stably work in the terahertz band, and the working frequency application range is improved.

[0033] The embodiments of the present application will be described in detail below with reference to the accompanying drawings.

[0034] Figure 1 is a structural schematic of a signal amplification circuit provided by the embodiments of the present application Figure One , as shown in Figure 1 , the signal amplification circuit comprises: an input transmission line 10 for receiving an input signal; a plurality of amplification units 20, the first end of each amplification unit 20 is connected with the input transmission line 10 respectively, and two adjacent amplification units 20 are connected through a stabilizing module 30; wherein, the amplification unit 20 is used for amplifying the signal, and the stabilizing module 30 at least includes one stabilizing resistor R0; an output transmission line 40, the second end of each amplification unit 20 is connected with the output transmission line 40 respectively; wherein, the output transmission line 40 is used for outputting the signal amplified by the amplification unit 20.

[0035] In an implementation scenario, the input transmission line 10 and the output transmission line 40 can be artificial transmission lines with a preset characteristic impedance, and the signal received by the input transmission line 10 can be a signal with a frequency in the terahertz wave band.

[0036] The signal can be injected from the input transmission line 10 and transmitted along the input transmission line 10 to each amplification unit 20. The amplification unit 20 can amplify the signal and output the amplified signal to the output transmission line 40. The amplified signals output by the plurality of amplification units 20 are combined on the output transmission line 40, and finally output from the right end of the output transmission line 40.

[0037] When the current of a certain amplification unit 20 changes due to factors such as load fluctuation and environmental change, since the current of the adjacent amplification unit 20 is relatively stable, the unbalanced current formed by the two can be transmitted through the stabilizing resistor R0, indirectly adjusting the effective working voltage of the amplification unit 20, so that the currents of the plurality of amplification units 20 tend to be balanced, effectively avoiding the performance fluctuation of the signal amplification circuit caused by the current change of a single amplification unit 20, and improving the stability of the signal amplification circuit.

[0038] Among them, the stabilizing resistor is a resistor element that dynamically adapts the working state of the signal amplification circuit and environmental changes to balance the current of adjacent amplification units and suppress the performance fluctuation of the signal amplification circuit.

[0039] Figure 2 is a comparison diagram of the stability of a signal amplification circuit provided by an embodiment of the present application, Figure 2 shows a signal amplification circuit working in the terahertz low frequency band, the abscissa is the signal frequency, and the ordinate is the Mu value, which represents the stability of the signal amplification circuit. When the Mu value is greater than 1, it indicates that the stability of the signal amplification circuit is good, and the larger the Mu value, the better the stability of the circuit. Figure 2In the figure, the solid line represents the Mu value of the signal amplification circuit after the stable resistance R0 is added, and the dotted line represents the Mu value of the signal amplification circuit without adding the stable resistance R0. It can be seen that the Mu value of the signal amplification circuit is less than 1 when the stable resistance R0 is not added, and the signal amplification circuit can only work stably under certain load impedance, and there is a risk of self-excitation. After adding the stable resistance R0, the Mu value of the signal amplification circuit is greater than 1, indicating that the signal amplification circuit can work stably under all load impedances, and the stability is high.

[0040] The stability of the signal amplification circuit is related to the resistance value of the stable resistance R0. In some embodiments, the stable resistance R0 is a resistance with adjustable resistance value, so the resistance value of the stable resistance R0 can be flexibly adjusted according to the actual working state of the signal amplification circuit, and then the stability of the signal amplification circuit is adjusted to enable the signal amplification circuit to achieve a better stable state under different working conditions.

[0041] In addition, when the working environment of the signal amplification circuit changes, the parameters of the signal amplification circuit may change, and at this time, the resistance value of the stable resistance can be adjusted to maintain the stability of the signal amplification circuit, thereby improving the environmental adaptability.

[0042] In another implementation scenario, the stable resistance R0 can also be a resistance with a fixed resistance value.

[0043] In some embodiments, the stable module 30 further includes an inductor connected in parallel with the stable resistance R0, or a capacitor connected in series with the stable resistance R0.

[0044] In one implementation scenario, when the stable module 30 further includes an inductor connected in parallel with the stable resistance R0, based on the parasitic parameters of the inductor, the inductor and the stable resistance R0 can form a high-frequency compensation network, thereby facilitating further improvement of the stability of the signal amplification circuit.

[0045] In one implementation scenario, when the stable module 30 further includes a capacitor connected in series with the stable resistance R0, based on the capacitor, the direct current coupling between adjacent amplification units 20 can be suppressed to avoid imbalance of the drain current caused by the direct current potential deviation, thereby facilitating improvement of the stability of the signal amplification circuit.

[0046] In another implementation scenario, the stable module 30 can also be a filter structure composed of the stable resistance R0, the inductor and the capacitor, or a π-type network, etc.

[0047] The embodiment of the present application provides a signal amplification circuit, which comprises an input transmission line 10, an output transmission line 40 and a plurality of amplification units 20, wherein, after receiving a signal, the signal can be transmitted to each amplification unit 20 to be amplified and then output through the output transmission line 40. Since the adjacent amplification units 20 are connected through a stabilizing module 30 comprising at least one stabilizing resistor R0, when the current of a certain amplification unit 20 changes, the current of the adjacent amplification unit 20 is relatively stable, and the unbalanced current formed by the two can be transmitted through the stabilizing resistor R0, thereby indirectly adjusting the effective working voltage of the amplification unit 20, so that the currents of the plurality of amplification units 20 tend to be balanced, the performance fluctuation of the signal amplification circuit caused by the current change of a single amplification unit 20 is effectively avoided, the self-excitation phenomenon is avoided, the stability of the signal amplification circuit is improved, the signal amplification circuit can stably work in the terahertz wave band, the working frequency application range is improved, and the present application plays an important role in filling the blank of the signal amplification circuit working in the terahertz band and developing terahertz technology.

[0048] On the basis of the above embodiment, an embodiment is provided below to describe the structure of the amplification unit 20.

[0049] Figure 3 It is a structure schematic of a signal amplification circuit provided by the embodiment of the present application Figure Two , as shown in Figure 3 , the amplification unit 20 comprises a transistor T, the gate of the transistor T is the first end of the amplification unit 20 and is connected with the input transmission line 10, the drain of the transistor T is the second end of the amplification unit 20 and is connected with the output transmission line 40, and the source of the transistor T is grounded. Among them, the drains of two adjacent transistors T are connected through the stabilizing module 30.

[0050] The parasitic capacitance of the transistor T and the first inductor and the second inductor form an artificial transmission line, the signal is injected from the input transmission line 10, each transistor T is excited in turn, and the signal is transmitted along the output transmission line 40 after being amplified step by step.

[0051] In an implementation scenario, when the drain current of a certain transistor T increases or decreases, the drain currents of the adjacent transistors T are relatively stable, and thus an unbalanced current is formed between the two. The unbalanced current is transmitted through the stabilizing resistor R0, thereby indirectly reducing or increasing the effective drain voltage of the transistor T, further inhibiting the drain current of the transistor T from increasing or decreasing, and finally the currents between the drains of the plurality of transistors T tend to be balanced. Therefore, the stabilizing resistor R0 can balance the working states of different transistors T, thereby improving the stability of the signal amplification circuit.

[0052] When the current of the transistor T increases, the stable resistor R0 divides the voltage to reduce the voltage of the transistor T to avoid further increase of the current. When the current of the transistor T decreases, the stable resistor R0 divides the voltage to increase the voltage of the transistor T to avoid further decrease of the current.

[0053] In some embodiments, the first microstrip line M1 is arranged between the gate of the transistor T and the input transmission line 10, and the second microstrip line M2 is arranged between the drain of the transistor T and the output transmission line 40.

[0054] Since the impedances of the input transmission line 10 and the output transmission line 40 are usually 50Ω, and the impedances of the gate and the drain of the transistor T are different, if the transistor T is directly connected to the input transmission line 10 and the output transmission line 40, a large amount of signal reflection may occur. Therefore, the first microstrip line M1 is arranged between the gate of the transistor T and the input transmission line 10 to match the impedance of the gate of the transistor T and the input transmission line 10, and the second microstrip line M2 is arranged between the drain of the transistor T and the output transmission line 40 to match the impedance of the drain of the transistor T and the output transmission line 40.

[0055] The microstrip line is a microwave transmission line composed of a conductor strip on a dielectric substrate and a back ground metal plate.

[0056] In one implementation scenario, the second microstrip line M2 includes a first sub-microstrip line M21 and a second sub-microstrip line M22, and the characteristic impedances of the first sub-microstrip line M21 and the second sub-microstrip line M22 are different.

[0057] The first sub-microstrip line M21 is used to adapt the impedance of the drain of the transistor T, and the second sub-microstrip line M22 is used to adapt the impedance of the output transmission line 40, so that the characteristic impedances of the drain of the transistor T and the output transmission line 40 can be better matched, and the signal reflection loss can be reduced.

[0058] It should be noted that the specific characteristic impedances of the first sub-microstrip line M21 and the second sub-microstrip line M22 can be designed according to actual needs, for example, the characteristic impedance of the first sub-microstrip line M21 is designed as 40Ω, and the characteristic impedance of the second sub-microstrip line M22 is designed as 60Ω, and the present application does not limit the specific values.

[0059] In another implementation scenario, the characteristic impedances of the first sub-microstrip line M21 and the second sub-microstrip line M22 can also be the same.

[0060] It should be noted that, Figure 3As shown in the figure, the two ends of the stabilizing resistor R0 are connected between the first sub-microstrip line M21 and the second sub-microstrip line M22. However, the two ends of the stabilizing resistor R0 can also be connected between the first sub-microstrip line M21 and the gate of the transistor T, or between the second sub-microstrip line M22 and the output port A, which is the connection node of the second microstrip line M2 and the output transmission line 40.

[0061] In summary, the drain electrodes of adjacent transistors T are connected through the stabilizing module 30, so that the stabilizing module 30 can directly act on the drain current. When the drain current of a certain transistor T changes, the unbalanced current formed between the drain electrode of the transistor T and the drain electrode of the adjacent transistor T can be directly transmitted through the stabilizing module 30, shortening the adjustment path of the unbalanced current, thereby improving the drain current balancing efficiency. In addition, the first microstrip line M1 is arranged between the gate of the transistor T and the input transmission line 10 to realize impedance matching between the gate of the transistor T and the input transmission line 10; the second microstrip line M2 is arranged between the drain electrode of the transistor T and the output transmission line 40 to realize impedance matching between the drain electrode of the transistor T and the output transmission line 40, thereby effectively reducing signal reflection loss.

[0062] On the basis of the above embodiment, an embodiment is provided below to describe the structure of the signal amplification circuit.

[0063] In some embodiments, the signal amplification circuit further comprises a first resistor R1 and a second resistor R2; The first end of the first resistor R1 is grounded, and the second end is connected with the first microstrip line M1 and the input transmission line 10 respectively; The first end of the second resistor R2 is grounded, and the second end is connected with the second microstrip line M2 and the output transmission line 40 respectively.

[0064] The first resistor R1 is used to absorb the remaining signal reaching the end of the input transmission line 10 to prevent the remaining signal from reflecting. In addition, the connection node of the first microstrip line M1 and the input transmission line 10 is taken as the input port B, and the first resistor R1 can provide a direct current grounding path for the input port B, stabilize the direct current potential of the input port B, and avoid the direct current signal on the input transmission line 10 or the first microstrip line M1 interfering with the gate voltage of the transistor T, so as to ensure that the transistor T can normally amplify the signal.

[0065] The second resistance R2 is used to absorb the reflected signal due to impedance mismatch, so as to avoid the reflected signal from forming a standing wave. In addition, the connection node of the second microstrip line M2 and the output transmission line 40 is taken as an output port A, and based on the second resistance R2, the direct current potential of the output port A can be stabilized, the direct current fluctuation on the output transmission line 40 or the second microstrip line M2 is avoided to affect the drain voltage of the transistor T, the drain current imbalance is caused, and therefore the stability of the signal amplification circuit is improved.

[0066] In some embodiments, the signal amplification circuit further comprises a plurality of first inductors L1 and a plurality of second inductors L2. Two adjacent first microstrip lines M1 are connected through the input transmission line 10 and the first inductor L1. Two adjacent second microstrip lines M2 are connected through the output transmission line 40 and the second inductor L2.

[0067] The first inductor L1 and the second inductor L2 can form an artificial transmission line together with the parasitic capacitance of the transistor T, and by designing the inductance values of the first inductor L1 and the second inductor L2, the required characteristic impedance can be obtained, and the flexibility is high.

[0068] It should be noted that the resistance values of the first resistance R1 and the second resistance R2 and the inductance values of the first inductor L1 and the second inductor L2 can be set according to actual needs, and the present application does not make specific limitations thereto.

[0069] In summary, the signal amplification circuit further comprises the first resistance R1 and the second resistance R2, wherein the first resistance R1 can absorb the remaining signal reaching the end of the input transmission line 10 and also stabilize the direct current potential of the input port B; the second resistance R2 can absorb the reflected signal and also stabilize the direct current potential of the output port A. In addition, the signal amplification circuit can further comprise a plurality of first inductors L1 and a plurality of second inductors L2, and the first inductor L1 and the second inductor L2 can form an artificial transmission line with the required characteristic impedance together with the parasitic capacitance of the transistor T to meet different needs.

[0070] The embodiment of the present application provides an ultra-wideband amplifier comprising the signal amplification circuit provided by any of the above embodiments.

[0071] The embodiment of the present application provides an electronic device comprising the ultra-wideband amplifier provided by the above embodiment.

[0072] The electronic device includes but is not limited to a mobile communication technology base station, a radar device, and a high-speed digital oscilloscope and the like.

[0073] In the above embodiments, the description of each embodiment is focused on, and the part not described or recorded in a certain embodiment can be referred to the relevant description of other embodiments. If there is no special description and logical conflict, the terms and / or descriptions between different embodiments are consistent and can be mutually referred to, and the technical features in different embodiments can be combined to form new embodiments according to their inherent logical relationship.

[0074] The above-described embodiments are only used to illustrate the technical solutions of the present application, rather than limit them; although the present application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that the technical solutions recorded in the foregoing embodiments can still be modified, or some technical features can be replaced by equivalents; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the embodiments of the present application, and should be included in the protection scope of the present application.

Claims

1. A signal amplification circuit, characterized by, The signal amplification circuit comprises: an input transmission line for receiving an input signal; a plurality of amplification units, each of which has a first end connected to the input transmission line, and two adjacent amplification units are connected through a stabilizing module; wherein the amplification unit is used for amplifying the signal, and the stabilizing module comprises at least one stabilizing resistor; an output transmission line, each of which has a second end connected to the output transmission line; wherein the output transmission line is used for outputting the signal amplified by the amplification unit.

2. The signal amplification circuit according to claim 1, characterized by The amplification unit comprises a transistor, the gate of the transistor is the first end of the amplification unit, and the input transmission line is connected, the drain of the transistor is the second end of the amplification unit, and the output transmission line is connected, and the source of the transistor is grounded. Wherein, the drain of two adjacent transistors is connected through the stabilizing module.

3. The signal amplification circuit according to claim 2, characterized by The gate of the transistor and the input transmission line are provided with a first microstrip line, and the drain of the transistor and the output transmission line are provided with a second microstrip line.

4. The signal amplification circuit according to claim 3, characterized by The signal amplification circuit further comprises a first resistor and a second resistor; The first end of the first resistor is grounded, and the second end is connected to the first microstrip line and the input transmission line respectively; The first end of the second resistor is grounded, and the second end is connected to the second microstrip line and the output transmission line respectively.

5. The signal amplification circuit according to claim 3, wherein The signal amplification circuit further comprises a plurality of first inductors and a plurality of second inductors; Two adjacent first microstrip lines are connected through the input transmission line and the first inductor; Two adjacent second microstrip lines are connected through the output transmission line and the second inductor.

6. The signal amplification circuit according to claim 3, wherein The second microstrip line comprises a first sub-microstrip line and a second sub-microstrip line, and the characteristic impedance of the first sub-microstrip line and the second sub-microstrip line is different.

7. The signal amplification circuit according to any one of claims 1 to 6, characterized by, The stabilizing module further comprises an inductor connected in parallel with the stabilizing resistor, or a capacitor connected in series with the stabilizing resistor.

8. The signal amplification circuit according to any one of claims 1 to 6, characterized by, The stabilizing resistor is a resistance with adjustable resistance value.

9. An ultra-wideband amplifier, characterized by The signal amplification circuit comprises any one of claims 1-8.

10. An electronic device, comprising: The ultra-wideband amplifier comprises claim 9.

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