Self-bias power amplification circuit and self-resonance power amplification circuit based on self-bias

Abstract

The invention discloses a self-bias power amplification circuit and a self-resonance power amplification circuit based on self-bias, and belongs to the technical field of radio frequency circuits. The source electrode of the power device is connected with the voltage dividing module, the internal resistor of the power device and the voltage dividing module divide the voltage of the drain electrode, the voltage divided at the two ends of the voltage dividing module serves as the voltage of the source electrode, the grid electrode of the power device is grounded, negative voltage difference is formed between the grid electrode and the source electrode, the voltage is provided for the source electrode of the power device, and self-biasing is achieved. Meanwhile, by designing a feedback resonance network composed of a fourth microstrip line, a coupling capacitor, a third microstrip line, an input capacitor, a first microstrip line and a sixth microstrip line, under the condition that no external periodic excitation signal exists, direct-current energy of drain current is converted into a radio-frequency signal with a specific frequency due to a feedback mechanism, and the radio-frequency signal is converted into a radio-frequency signal with a specific frequency. One part is coupled with the fourth microstrip line through the second microstrip line and then serves as an input signal to be input to the feedback resonance network, and the other part is output through the second microstrip line, the output capacitor and the fifth microstrip line.

Description

TECHNICAL FIELD

[0001] The present application belongs to the technical field of radio frequency circuit, and particularly relates to a self-bias circuit which makes the gate-source stage of an active transistor form a voltage drop as a negative voltage source and directly generate a microwave signal through a feedback resonant network. BACKGROUND

[0002] In the field of power amplifier energy generation, a traditional scheme usually relies on a signal source, a pre-stage driving module and a power amplification module to work cooperatively to realize large power output through multi-stage amplification, and uses an MCU (micro control unit) controller to control a voltage controlled oscillator (VCO) and a phase shifter to adjust frequency and phase, so as to finally realize power synthesis. GaAs-based and GaN-based high-power devices generally need to be powered by double power supplies, the gate needs to be connected to a negative voltage source and stabilized before the drain is powered, and in actual work, a timing control circuit must be used to ensure the power-on and power-off sequence of the gate voltage and the drain voltage so that the device can work normally, otherwise the device may be broken down or burned out. Such a product has problems of large number of devices, complex circuit, multiple power supplies, large size and high cost, and is significantly restricted in low-cost and miniaturized engineering applications. SUMMARY

[0003] The present application aims at the problems in the background art and provides a self-bias power amplification circuit and a self-resonance power amplification circuit based on self-bias.

[0004] To achieve the above object, the technical scheme adopted by the present application is as follows:

[0005] The self-bias power amplification circuit comprises a power device PA, a voltage dividing module, a source alternating current grounding capacitor C8, an input capacitor C1, an output capacitor C4, a first drain bypass capacitor C5, a choke inductor L1, an input terminal Pin, an output terminal Pout, a ground terminal GND and a power supply Vd, wherein the voltage dividing module is a source direct current voltage dividing resistor R1.

[0006] The source S of the power device PA is connected with the voltage dividing module R1, the drain D is connected with the power supply Vd through the choke inductor L1, the drain D is also connected with the output terminal Pout through the output capacitor C4, the gate G is connected with the ground terminal GND, the gate G is also connected with the input terminal Pin through the input capacitor C1, the choke inductor L1 is also connected with the ground terminal through the first drain bypass capacitor C5, and the source alternating current grounding capacitor C8 is connected in parallel with the voltage dividing module, one end of which is connected to the source S of the power device PA and the other end of which is grounded.

[0007] Further, the power device PA is a gallium nitride device or a gallium arsenide device.

[0008] The application provides a self-bias power amplification circuit, a source S of a power device PA is connected with a voltage division module R1, an internal resistance R of the power device PA is connected with the voltage division module R1 ds , and the voltage division module R1 divides a drain voltage V d , a voltage divided by the voltage division module R1 at two ends is used as a source voltage V S , since a gate of the power device PA is grounded (V G =0V), a negative voltage difference is formed between the gate and the source, a voltage is provided for the source of the power device PA , and self-bias is realized.

[0009] A self-resonance power amplification circuit based on self-bias includes a power device PA, a voltage division module, a source alternating current grounding capacitor C8, an input capacitor C1, an output capacitor C4, a first drain bypass capacitor C5, a choke inductor L1, a first microstrip line TL1, a second microstrip line TL2, a third microstrip line TL3, a fourth microstrip line TL4, a fifth microstrip line TL5, a sixth microstrip line TL6, a second drain bypass capacitor C6, a coupling capacitor C7, an output end Pout, a grounding end GND and a power supply Vd, wherein the voltage division module is a source direct current voltage division resistor R1.

[0010] The source S of the power device PA is connected with the voltage division module R1, the drain D is connected with the power supply Vd through the second microstrip line TL2 and the choke inductor L1, the drain D is also connected with the output end Pout through the second microstrip line TL2, the output capacitor C4 and the fifth microstrip line TL5, the gate G is connected with the grounding end GND through the first microstrip line TL1 and the sixth microstrip line TL6, the gate G is also connected with the grounding end GND through the first microstrip line TL1, the input capacitor C1, the third microstrip line TL3, the coupling capacitor C7 and the fourth microstrip line TL4, the choke inductor L1 is also connected with the grounding end through the first drain bypass capacitor C5 and connected with the grounding end through the second drain bypass capacitor C6, the source alternating current grounding capacitor C8 is connected in parallel with the voltage division module, one end is connected to the source S of the power device PA, and the other end is grounded.

[0011] The application provides a self-resonance power amplification circuit based on self-bias, a source S of a power device PA is connected with a voltage division module R1, an internal resistance R of the power device PA is connected with the voltage division module R1 ds , and the voltage division module R1 divides a drain voltage V d , a voltage divided by the voltage division module R1 at two ends is used as a source voltage V S , since a gate of the power device PA is grounded (V G =0V), a negative voltage difference is formed between the gate and the source, a voltage is provided for the source of the power device PA , and self-bias is realized.

[0012] The fourth microstrip line TL4, the coupling capacitor C7, the third microstrip line TL3, the input capacitor C1, the first microstrip line TL1 and the sixth microstrip line TL6 form a feedback resonance network, and under the condition that there is no external periodic excitation signal, the direct current energy of the drain current is converted into a radio frequency signal of a specific frequency due to the self feedback mechanism, and a stable radio frequency signal output is obtained.

[0013] The first microstrip line TL1 and the sixth microstrip line TL6 are connected to the ground terminal GND, and by adjusting the lengths of the first microstrip line TL1 and the sixth microstrip line TL6, the input impedance matching of the power amplifier circuit is realized; the second microstrip line TL2, the output capacitor C4 and the fifth microstrip line TL5 are connected to the output terminal, and by adjusting the lengths of the second and fifth microstrip lines and the capacitance value of the output capacitor, the output impedance matching of the power amplifier circuit is realized.

[0014] The first drain bypass capacitor C5 is connected between the choke inductor L1 and the ground terminal, and the second drain bypass capacitor C6 is connected between the choke inductor L1 and the ground terminal, and by adjusting the capacitance values of the first drain bypass capacitor C5 and the second drain bypass capacitor C6, the capacitor with a larger capacitance value is away from the second microstrip line TL2, and the capacitor with a smaller capacitance value is close to the second microstrip line TL2, thereby minimizing the influence of the parasitic inductance in the power amplifier circuit by minimizing the loop area of the high frequency signal generated by the power device PA itself, so as to realize high frequency decoupling.

[0015] Further, by adjusting the lengths of the third microstrip line TL3 and the fourth microstrip line TL4, and the capacitance value of the coupling capacitor C7, the frequency of the output signal of the self-resonant power amplifier circuit is regulated.

[0016] Further, the resistance value of the voltage dividing module R1 is determined according to the negative gate-source voltage bias voltage required by the self-resonant power amplifier circuit when it works, so as to provide an accurate self-bias voltage to the amplifier circuit, R1=-Ugs / Ids, Ids is the drain static working current of the amplifier circuit, and Ugs is the gate working voltage corresponding to the drain static working current Ids of the power amplifier circuit under the non-self-bias voltage circuit. Since the die material is a normally-on MOSFET of GaN transistor or GaAs transistor, a negative Ugs is required to turn off, so that it works in the amplification zone.

[0017] Further, the fourth microstrip line TL4, the coupling capacitor C7, the third microstrip line TL3, the input capacitor C1, the first microstrip line TL1 and the sixth microstrip line TL6 form a feedback resonance network, and under the condition that there is no external periodic excitation signal, the DC energy of the drain current is converted into a radio frequency signal of a specific frequency due to the self feedback mechanism, a part of the radio frequency signal is coupled through the second microstrip line TL2 and the fourth microstrip line TL4 and then input into the feedback resonance network formed by the fourth microstrip line TL4, the coupling capacitor C7, the third microstrip line TL3, the input capacitor C1, the first microstrip line TL1 and the sixth microstrip line TL6 as the input of the power device PA, and another part of the radio frequency signal is output through the second microstrip line TL2, the output capacitor C4 and the fifth microstrip line TL5. Specifically, the signal input into the feedback resonance network is amplified by the power device PA, and then coupled through the second microstrip line TL2 and the fourth microstrip line TL4 and then input into the power device PA to form positive feedback and realize stable output of the signal.

[0018] Compared with the prior art, the present application has the following beneficial effects:

[0019] 1. The self-resonant power amplification circuit based on self-bias provided by the present application is characterized in that the source of the power device is connected with the voltage dividing module, the internal resistance of the power device and the voltage dividing module divide the drain voltage, the voltage divided by the voltage dividing module is used as the source voltage, the gate of the power device is grounded, a negative voltage difference is formed between the gate and the source, the source of the power device is provided with the voltage, self-bias is realized, the problem of needing to use multiple power supplies for power supply in the traditional scheme is solved, the power supply sequence of first adding the gate and then adding the drain in the multiple power supply power supply is avoided, the complex timing and power supply circuit are reduced, the structure of the power amplification circuit is simplified, the hardware complexity is reduced, and low cost and miniaturization are realized.

[0020] 2. The self-resonant power amplification circuit based on self-bias provided by the present application is characterized in that the feedback resonance network composed of the fourth microstrip line, the coupling capacitor, the third microstrip line, the input capacitor, the first microstrip line and the sixth microstrip line is designed, under the condition that there is no external periodic excitation signal, the DC energy of the drain current is converted into a radio frequency signal of a specific frequency due to the self feedback mechanism, a part of the radio frequency signal is coupled through the second microstrip line and the fourth microstrip line and then input into the feedback resonance network, and another part of the radio frequency signal is output through the second microstrip line, the output capacitor and the fifth microstrip line. The signal input into the feedback resonance network is amplified by the power device, and then coupled through the second microstrip line and the fourth microstrip line and then input into the power device to form positive feedback and realize stable output of the radio frequency signal. BRIEF DESCRIPTION OF DRAWINGS

[0021] Figure 1 The schematic diagram of the self-bias power amplification circuit provided by the present application;

[0022] Figure 2 The present invention provides a schematic diagram of a self-biased self-resonant power amplifier circuit. Detailed Implementation

[0023] The technical solution of the present invention will be described in detail below with reference to the accompanying drawings and embodiments.

[0024] Figure 1 The schematic diagram of a self-biased power amplifier circuit provided by the present invention includes a power device PA, a voltage divider module, a source AC grounding capacitor C8, an input capacitor C1, an output capacitor C4, a first drain bypass capacitor C5, a choke inductor L1, an input terminal Pin, an output terminal Pout, a ground terminal GND, and a power supply Vd, wherein the voltage divider module is a source DC voltage divider resistor R1.

[0025] The source S of the power device PA is connected to the voltage divider module R1, the drain D is connected to the power supply Vd through the choke inductor L1, the drain D is also connected to the output terminal Pout through the output capacitor C4, the gate G is connected to the ground terminal GND, the gate G is also connected to the input terminal Pin through the input capacitor C1, the choke inductor L1 is also connected to the ground terminal through the first drain bypass capacitor C5, and the source AC grounding capacitor C8 is connected in parallel with the voltage divider module, with one end connected to the source S of the power device PA and the other end grounded.

[0026] In the self-biased power amplifier circuit provided by this invention, the source S of the power device PA is connected to the voltage divider module R1, and the internal resistance R of the power device PA is... ds And the voltage divider module R1 to the drain voltage V d Voltage division is performed, and the voltage across R1 is used as the source voltage V. S Because the gate of the power device PA is grounded (V G When the voltage is 0V, a negative voltage difference is formed between the gate and the source, providing voltage to the source of the power device PA. This achieves self-biasing. The resistance value of the voltage divider module R1 is determined based on the required negative bias voltage between the gate and source.

[0027] In this circuit, the source AC grounding capacitor C8 connected in parallel across the voltage divider module R1 stores energy and reduces the RF energy attenuation caused by R1, thereby stabilizing the power amplifier circuit. The input capacitor C1 connected between the gate G and the input pin of the power device PA, and the output capacitor C4 connected between the drain D and the output Pout of the power device PA, serve as DC blocking capacitors for the input and output, respectively. The first drain bypass capacitor C5 connected between the choke inductor L1 and the ground GND is used to suppress low-frequency oscillations and enhance the stability of the power amplifier circuit. The choke inductor L1 connected between the drain of the power device PA and the first drain bypass capacitor C5 works together with the first drain bypass capacitor C5 to form a low-pass filter to isolate RF signals.

[0028] The power device PA can adjust the transmission and conversion of power, and the gallium nitride (GaN) device or the gallium arsenide (GaAs) device is selected.

[0029] Figure 2 A schematic diagram of a self-resonant power amplification circuit based on self-bias provided by the application comprises a power device PA, a voltage division module, a source alternating current grounding capacitor C8, an input capacitor C1, an output capacitor C4, a first drain bypass capacitor C5, a choke inductor L1, a first microstrip line TL1, a second microstrip line TL2, a third microstrip line TL3, a fourth microstrip line TL4, a fifth microstrip line TL5, a sixth microstrip line TL6, a second drain bypass capacitor C6, a coupling capacitor C7, an output end Pout, a ground end GND and a power supply Vd, wherein the voltage division module is a source direct current voltage division resistor R1.

[0030] The source S of the power device PA is connected with the voltage division module R1, the drain D is connected with the power supply Vd through the second microstrip line TL2 and the choke inductor L1, the drain D is also connected with the output end Pout through the second microstrip line TL2, the output capacitor C4 and the fifth microstrip line TL5, the gate G is connected with the ground end GND through the first microstrip line TL1 and the sixth microstrip line TL6, the gate G is also connected with the ground end GND through the first microstrip line TL1, the input capacitor C1, the third microstrip line TL3, the coupling capacitor C7 and the fourth microstrip line TL4, the choke inductor L1 is also connected with the ground end through the first drain bypass capacitor C5 and the second drain bypass capacitor C6, the source alternating current grounding capacitor C8 is connected in parallel with the voltage division module, one end of the source alternating current grounding capacitor C8 is connected to the source S of the power device PA, and the other end is grounded.

[0031] The self-resonant power amplification circuit based on self-bias provided by the application, the source S of the power device PA is connected with the voltage division module R1, the internal resistance R ds of the power device PA and the voltage division module R1 divide the drain voltage V d , the voltage divided at both ends of R1 is used as the source voltage V S , since the gate of the power device PA is grounded (V G =0V), a negative voltage difference is formed between the gate and the source, the voltage V is provided for the source of the power device PA, and self-bias is realized.

[0032] The fourth microstrip line TL4, the coupling capacitor C7, the third microstrip line TL3, the input capacitor C1, the first microstrip line TL1 and the sixth microstrip line TL6 form a feedback resonance network, under the condition that there is no external periodic excitation signal, the direct current energy of the drain current is converted into a radio frequency signal of a specific frequency due to the self-feedback mechanism, and a stable radio frequency signal output is obtained.

[0033] The first microstrip line TL1 and the sixth microstrip line TL6 are connected to the ground terminal GND, and by adjusting the lengths of the first microstrip line TL1 and the sixth microstrip line TL6, the input impedance matching of the power amplifier circuit is realized; the second microstrip line TL2, the output capacitor C4, the fifth microstrip line TL5 and the output terminal are connected, and by adjusting the lengths of the second and fifth microstrip lines and the capacitance value of the output capacitor, the output impedance matching of the power amplifier circuit is realized.

[0034] The first drain bypass capacitor C5 is connected between the choke inductor L1 and the ground terminal, and the second drain bypass capacitor C6 is connected between the choke inductor L1 and the ground terminal, and by adjusting the capacitance values of the first drain bypass capacitor C5 and the second drain bypass capacitor C6, the capacitor with a larger capacitance value is away from the second microstrip line TL2, and the capacitor with a smaller capacitance value is close to the second microstrip line TL2, thereby minimizing the influence of the parasitic inductance in the power amplifier circuit by maximizing the loop area of the high-frequency signal generated by the power device PA itself, so as to realize high-frequency decoupling.

[0035] Further, by adjusting the lengths of the third microstrip line TL3 and the fourth microstrip line TL4, and the capacitance value of the coupling capacitor C7, the frequency of the output signal of the self-resonant power amplifier circuit is regulated.

[0036] Further, the resistance value of the voltage dividing module R1 is determined according to the negative gate-source voltage bias voltage required by the self-resonant power amplifier circuit when working, so as to provide an accurate self-bias voltage to the amplifier circuit, R1=-Ugs / Ids, Ids is the drain static working current of the amplifier circuit, and Ugs is the gate working voltage corresponding to the drain static working current Ids of the power amplifier circuit under the non-self-bias circuit. Since the die material is a normally-on MOSFET of GaN transistor or GaAs transistor, a negative Ugs is required to turn off, so that it works in the amplification zone.

[0037] Further, the fourth microstrip line TL4, the coupling capacitor C7, the third microstrip line TL3, the input capacitor C1, the first microstrip line TL1 and the sixth microstrip line TL6 form a feedback resonance network, under the condition that there is no external periodic excitation signal, the direct current energy of the drain current is converted into a radio frequency signal of a specific frequency due to the self feedback mechanism, a part of the radio frequency signal is coupled through the second microstrip line TL2 and the fourth microstrip line TL4 as an input signal, and is input to the feedback resonance network composed of the fourth microstrip line TL4, the coupling capacitor C7, the third microstrip line TL3, the input capacitor C1, the first microstrip line TL1 and the sixth microstrip line TL6, as the input of the power device PA, another part of the radio frequency signal is output through the second microstrip line TL2, the output capacitor C4 and the fifth microstrip line TL5. Specifically, the signal entering the feedback resonance network is amplified by the power device PA, and then coupled through the second microstrip line TL2 and the fourth microstrip line TL4 as the input of the power device PA, forming positive feedback and realizing stable output of the signal.

Claims

1. A self-biased power amplifier circuit, comprising: The power device, the voltage dividing module, the source alternating current grounding capacitor, the input capacitor, the output capacitor, the first drain bypass capacitor, the choke inductor, the input terminal, the output terminal, the grounding terminal and the power supply are provided. The source of the power device is connected with the voltage dividing module, the drain is connected with the power supply through the choke inductor, the drain is also connected with the output terminal through the output capacitor, the gate is connected with the grounding terminal, the gate is also connected with the input terminal through the input capacitor, the choke inductor is also connected with the grounding terminal through the first drain bypass capacitor, and the source alternating current grounding capacitor is connected with the voltage dividing module in parallel, one end of which is connected with the source of the power device and the other end of which is grounded.

2. The self-biased power amplification circuit of claim 1, wherein, The power device is a gallium nitride device or a gallium arsenide device.

3. The self-biased power amplification circuit of claim 1, wherein, The source of the power device is connected with the voltage dividing module, the internal resistance of the power device and the voltage dividing module divide the drain voltage, the voltage divided by the voltage dividing module is used as the source voltage, and since the gate of the power device is grounded, a negative voltage difference is formed between the gate and the source, thereby providing the voltage for the source of the power device and realizing self-bias.

4. The self-biased power amplification circuit of claim 1, wherein, The resistance value of the voltage dividing module is determined according to the required negative voltage bias voltage between the gate and the source.

5. A self-resonant power amplification circuit based on self-biasing, characterized by, The power device, the voltage dividing module, the source alternating current grounding capacitor, the input capacitor, the output capacitor, the first drain bypass capacitor, the choke inductor, the first microstrip line, the second microstrip line, the third microstrip line, the fourth microstrip line, the fifth microstrip line, the sixth microstrip line, the second drain bypass capacitor, the coupling capacitor, the output terminal, the grounding terminal and the power supply are provided. The source of the power device is connected with the voltage dividing module, the drain is connected with the power supply through the second microstrip line and the choke inductor, the drain is also connected with the output terminal through the second microstrip line, the output capacitor and the fifth microstrip line, the gate is connected with the grounding terminal through the first microstrip line and the sixth microstrip line, the gate is also connected with the grounding terminal through the first microstrip line, the input capacitor, the third microstrip line, the coupling capacitor and the fourth microstrip line, the choke inductor is also connected with the grounding terminal through the first drain bypass capacitor and the second drain bypass capacitor, and the source alternating current grounding capacitor is connected with the voltage dividing module in parallel, one end of which is connected with the source of the power device and the other end of which is grounded.

6. The self-bias-based self-resonant power amplification circuit according to claim 5, wherein The fourth microstrip line, the coupling capacitor, the third microstrip line, the input capacitor, the first microstrip line and the sixth microstrip line form a feedback resonance network, under the condition that there is no external periodic excitation signal, the direct current energy of the drain current is converted into a radio frequency signal, part of the radio frequency signal is coupled through the second microstrip line and the fourth microstrip line and used as an input signal, input into the feedback resonance network and used as the input of the power device, and the other part of the radio frequency signal is output through the second microstrip line, the output capacitor and the fifth microstrip line; the signal input into the feedback resonance network is amplified by the power device, coupled through the second microstrip line and the fourth microstrip line again and used as the input of the power device, thereby forming positive feedback and realizing stable output of the signal.

7. The self-bias-based self-resonant power amplification circuit according to claim 5, wherein The input impedance matching of the power amplifier circuit is realized by adjusting the lengths of the first microstrip line and the sixth microstrip line, and the output impedance matching of the power amplifier circuit is realized by adjusting the lengths of the second microstrip line and the fifth microstrip line and the capacitance value of the output capacitor.

8. The self-bias-based self-resonant power amplification circuit according to claim 5, wherein By adjusting the capacitance values of the first drain bypass capacitor and the second drain bypass capacitor, the capacitor with a larger capacitance value is far away from the second microstrip line, and the capacitor with a smaller capacitance value is close to the second microstrip line, so that high-frequency decoupling is realized.

9. The self-bias-based self-resonant power amplification circuit according to claim 5, wherein By adjusting the lengths of the third microstrip line and the fourth microstrip line and the capacitance value of the coupling capacitor, the output signal frequency of the self-resonant power amplifier circuit is regulated.

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