Method, device and equipment for establishing high-frequency equivalent circuit of on-chip inductor and medium

Abstract

The invention discloses an on-chip inductor high-frequency equivalent circuit establishing method, device and equipment and a medium, and relates to the technical field of semiconductors, in order to reduce the complexity of on-chip inductor high-frequency equivalent circuit modeling, the on-chip inductor high-frequency equivalent circuit establishing method comprises the following steps: on the basis of a test piece containing a radio frequency GSG PAD of a target inductor device, establishing an on-chip inductor high-frequency equivalent circuit; the method comprises the following steps: constructing three standard components containing a radio frequency GSG PAD; the test piece comprises an input GSG PAD, a target inductance device and an output GSG PAD; the standard component is constructed based on an input GSG PAD and an output GSG PAD; determining admittance parameters of the target inductor device based on the test data of the scattering parameters of the test piece and the test data of the scattering parameters of the three standard components; establishing a pole-residue model of the target inductor device according to the admittance parameters of the target inductor device in a vector fitting black box modeling mode; and according to the pole-residue model, constructing an on-chip high-frequency equivalent circuit of the target inductance device, and determining the value of each element in the on-chip high-frequency equivalent circuit.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and in particular to a method, apparatus, device, and medium for establishing a high-frequency equivalent circuit of an on-chip inductor. Background Technology

[0002] Currently, the main method for establishing the equivalent circuit of on-chip inductors is the equivalent circuit parameter identification method. This involves using the I-II type equivalent circuit topology corresponding to the inductor's current return path, and employing analytical formulas for mutual inductance of concentric half-turn inductors (for shapes such as octagons, circles, and squares) to calculate the mutual inductance between the current return path and each inductor coil, as well as the self-inductance of the return path itself. The mutual inductance between the return path and all coils is then summed to obtain a corrected model considering the DC inductance value of the inductor after considering the return path. Next, by dividing the return path into several concentric sub-paths and combining the corrected model results, an equivalent impedance model of the return path considering the skin effect and proximity effect at high frequencies is obtained, thus establishing the equivalent circuit model of the return path. Based on the corrected model and the equivalent impedance model, an equivalent circuit model of the I-II circuit structure is established. Finally, curve fitting is performed on the equivalent circuit model using test data of a single-ended inductor to obtain the values ​​of each component in the equivalent circuit model.

[0003] However, the modeling process of this method is complex. How to simplify the modeling process of the equivalent circuit of on-chip inductor devices has become a technical problem that needs to be solved by those skilled in the art. Summary of the Invention

[0004] The purpose of this invention is to provide a method, apparatus, device and medium for establishing the high-frequency equivalent circuit of an on-chip inductor, so as to construct the high-frequency equivalent circuit of the on-chip inductor by simplifying the modeling method of the on-chip inductor.

[0005] To achieve the above objectives, the present invention provides the following technical solution: A method for establishing a high-frequency equivalent circuit for an on-chip inductor includes: constructing three standard components containing radio frequency GSG pads based on a test device containing a radio frequency GSG PAD for a target inductor; wherein the test device includes an input GSG pad, a target inductor, and an output GSG pad; the standard components are constructed based on the input GSG pad and the output GSG pad; determining the admittance parameters of the target inductor based on test data of the scattering parameters of the test device and the test data of the scattering parameters of the three standard components; establishing a pole-residue model of the target inductor based on the admittance parameters of the target inductor using a vector fitting black-box modeling method; constructing an on-chip high-frequency equivalent circuit for the target inductor based on the pole-residue model, and determining the values ​​of each component in the on-chip high-frequency equivalent circuit.

[0006] In one optional embodiment of this application, the pole-residue model is expressed by the following formula: ; in, ; ; ; ; ; ; ; ; The pole-residue model of the a-th part of the target inductor; d is the constant term of the pole-residue model; The number of real residues or real poles in the pole-residue model; This represents the nth real residue of the pole-residue model. This represents the nth real pole of the pole-residue model. The complex residue or the number of complex poles in the pole-residue model; This represents the k-th complex residue of the pole-residue model. for The conjugate of complex numbers; for The real part; for The imaginary part; Let k be the complex pole value of the pole-residue model. for The conjugate of complex numbers; for The real part; for The imaginary part; , Let represent the i-th test frequency point; d is the constant term of the pole-residue model. This indicates the resistance value of the first resistor of the target inductor; This represents the inductance value of branch n in the equivalent circuit of the target inductor device; This represents the resistance value of branch n in the equivalent circuit of the target inductor. This represents the inductance value of branch k in the equivalent circuit of the target inductor device; This represents the resistance value of branch k in the equivalent circuit of the target inductor. This represents the capacitance value of branch k in the equivalent circuit of the target inductor. This represents the conductance value of branch k in the equivalent circuit of the target inductor.

[0007] In one optional embodiment of this application, determining the admittance parameter of the target inductor based on test data of the scattering parameters of the test piece and test data of the scattering parameters of the three standard pieces includes: By combining the test data of the scattering parameters of the three standard components, the scattering parameters of the input GSG PAD and the output GSG PAD are determined; The test data of the scattering parameters of the input GSG PAD, the scattering parameters of the output GSG PAD, and the scattering parameters of the test piece are transformed to obtain the transmission parameters of the input GSG PAD, the output GSG PAD, and the test piece. Using the transmission parameters of the test piece, combined with the transmission parameters of the input GSG PAD and the output GSG PAD, the intrinsic transmission parameters of the target inductor are determined. The intrinsic transfer parameters of the target inductor are transformed into admittance parameters to obtain the admittance parameters of the target inductor.

[0008] In one alternative embodiment of this application, at least three types of standard components containing an RF GSD PAD include: a through standard component, an open standard component, and a transmission line standard component. The scattering parameters of the input GSG PAD and the output GSG PAD are determined by the following formula: ; ; ; ; in, , , , The test data represents the scattering parameters of the through-type standard component; This represents the reflection coefficient of the input GSG PAD in the through-type standard component; This represents the reflection coefficient of the output GSG PAD in the through-type standard component; This represents the forward transmission coefficient of the through standard component; This represents the reverse transmission coefficient of the through standard component; This represents the input reflection coefficient of the input GSG PAD; This represents the forward transmission coefficient of the input GSG PAD; This represents the reverse transmission coefficient of the input GSG PAD; This represents the output reflection coefficient of the input GSG PAD; This represents the input reflection coefficient of the output GSG PAD; This represents the forward transmission coefficient of the output GSG PAD; This represents the reverse transmission coefficient of the output GSG PAD; This represents the output reflection coefficient of the output GSG PAD.

[0009] ; ; in, , The test data represents the scattering parameters of the open-circuit standard component; This represents the input reflection coefficient of the input GSG PAD in the open-circuit standard component; This represents the output reflection coefficient of the output GSG PAD in the open-circuit standard component; This indicates the return loss of an open-circuit standard component under open-circuit load. ; ; ; ; in, , , , Test parameters representing the scattering parameters of the transmission line standard component; This indicates the reflectivity of the high-frequency electromagnetic wave signal of the input GSG PAD in the transmission line standard component; This indicates the reflectivity of the high-frequency electromagnetic wave signal of the output GSG PAD in the transmission line standard component; This represents the scattering rate of high-frequency electromagnetic wave signals from the output GSG PAD to the input GSG PAD in the transmission line standard component; L represents the scattering rate of high-frequency electromagnetic wave signals from the input GSG PAD to the output GSG PAD in the transmission line standard component; L represents the length of the transmission line. This represents the propagation constant of the transmission line.

[0010] In one optional embodiment of this application, the transmission parameters of the input GSG PAD and the transmission parameters of the output GSG PAD are obtained by the following formula transformation: ; ; in, This indicates the transmission parameters of the input GSG PAD; This indicates the transmission parameters of the output GSG PAD; This represents the input reflection coefficient of the input GSG PAD; This represents the forward transmission coefficient of the input GSG PAD; This represents the reverse transmission coefficient of the input GSG PAD; This represents the output reflection coefficient of the input GSG PAD; This represents the input reflection coefficient of the output GSG PAD; This represents the forward transmission coefficient of the output GSG PAD; This represents the reverse transmission coefficient of the output GSG PAD; The output reflection coefficient of the output GSG PAD represents the first element of the transmission parameter matrix of the input GSG PAD; This represents the second element of the transmission parameter matrix of the input GSG PAD; This represents the third element of the transmission parameter matrix of the input GSG PAD; This represents the fourth element of the transmission parameter matrix of the input GSG PAD; This represents the first element of the transmission parameter matrix of the output GSG PAD; This represents the second element of the transmission parameter matrix of the output GSG PAD; This represents the third element of the transmission parameter matrix of the output GSG PAD; This represents the fourth element of the transmission parameter matrix of the output GSG PAD.

[0011] In one optional embodiment of this application, the intrinsic transmission parameters of the target inductor are determined by combining the transmission parameters of the test piece with the transmission parameters of the input GSG PAD and the output GSG PAD using the following formula: ; in, This represents the i-th test frequency point; Indicates the test frequency point is In the case of the input GSGPAD transmission parameter matrix; Indicates the test frequency point is In the case of the output GSG PAD, the transmission parameter matrix; Indicates the test frequency point is In the case of the inductor containing the radio frequency GSG PAD, the transmission parameter matrix of the test piece; Indicates the test frequency point is In the case of the intrinsic transfer parameter matrix of the target inductor device; Indicates the test frequency point is In the case of the intrinsic transmission parameter matrix, the first element; Indicates the test frequency point is In the case of the second element of the intrinsic transmission parameter matrix; Indicates the test frequency point is In the case of the third element of the intrinsic transmission parameter matrix; Indicates the test frequency point is In the case of the intrinsic transmission parameter matrix, the fourth element is...

[0012] In one optional embodiment of this application, the admittance parameter of the target inductor is obtained by transforming the intrinsic transfer parameters of the target inductor into admittance parameters using the following formula: ; ; ; ; ; in, Indicates the test frequency point is In the case of the target inductor, the admittance parameter matrix; Indicates the test frequency point is In the case of the target inductor device, the first admittance parameter of the admittance parameter matrix; Indicates the test frequency point is In the case of the target inductor device, the second admittance parameter of the admittance parameter matrix; Indicates the test frequency point is In the case of the target inductor, the third admittance parameter of the admittance parameter matrix; Indicates the test frequency point is In the case of the target inductor, the fourth admittance parameter of the admittance parameter matrix; Indicates the test frequency point is In the case of the intrinsic transmission parameter matrix, the first element; Indicates the test frequency point is In the case of the second element of the intrinsic transmission parameter matrix; Indicates the test frequency point is In the case of the third element of the intrinsic transmission parameter matrix; Indicates the test frequency point is In the case of the fourth element of the intrinsic transmission parameter matrix; This represents the characteristic impedance.

[0013] Compared with existing technologies, the method for establishing the equivalent circuit of an on-chip high-frequency inductor provided by this invention determines the admittance parameters of the target inductor by combining test data of scattering parameters of three standard components containing RF GSG PADs. Simultaneously, based on the admittance parameters of the target inductor, a vector fitting black-box modeling approach is used to construct the pole-residue model of the target inductor. This model converts the admittance parameters into physical circuit elements, avoiding the complex analytical calculations of traditional methods. It directly models the circuit structure based on data, simplifying the modeling of the equivalent circuit of the on-chip high-frequency inductor and improving the modeling efficiency of the equivalent circuit.

[0014] This application also provides a device for constructing a high-frequency equivalent circuit for an on-chip inductor, comprising: A standard component construction unit is used to construct three standard components containing an RF GSG PAD based on a test component containing an RF GSG PAD of a target inductor device; wherein the test component includes: an input GSG PAD, a target inductor device, and an output GSG PAD; the standard components are constructed based on the input GSG PAD and the output GSG PAD.

[0015] The admittance parameter acquisition unit is used to determine the admittance parameter of the target inductor based on the test data of the scattering parameters of the test piece and the test data of the scattering parameters of the three standard pieces.

[0016] The vector fitting modeling unit is used to establish the pole-residue model of the target inductor device based on the admittance parameters of the target inductor device by means of vector fitting black-box modeling.

[0017] The equivalent circuit determination unit is used to construct the on-chip high-frequency equivalent circuit of the target inductor device based on the pole-residue model, and to determine the values ​​of each component in the on-chip high-frequency equivalent circuit.

[0018] Compared with the prior art, the beneficial effects of the on-chip inductor high-frequency equivalent circuit establishment device provided by the present invention are the same as those of the on-chip inductor high-frequency equivalent circuit establishment method described in the above technical solution, and will not be repeated here.

[0019] The present invention also provides an electronic device, comprising: processor; Memory used to store the processor's executable instructions; The processor is configured to execute the above-described method for establishing the high-frequency equivalent circuit of an on-chip inductor by running instructions in the memory.

[0020] Compared with the prior art, the beneficial effects of the electronic device provided by the present invention are the same as those of the on-chip inductor high-frequency equivalent circuit establishment method described in the above technical solution, and will not be repeated here.

[0021] The present invention also provides a computer storage medium storing instructions that, when executed, implement the above-described method for establishing the high-frequency equivalent circuit of an on-chip inductor.

[0022] Compared with the prior art, the beneficial effects of the computer storage medium provided by the present invention are the same as those of the on-chip inductor high-frequency equivalent circuit establishment method described in the above technical solution, and will not be repeated here. Attached Figure Description

[0023] The accompanying drawings, which are included to provide a further understanding of the invention and form part of this invention, illustrate exemplary embodiments of the invention and are used to explain the invention, but do not constitute an undue limitation of the invention. In the drawings: Figure 1 A flowchart illustrating the method for establishing the high-frequency equivalent circuit of an on-chip inductor provided in the embodiments of this application; Figure 2 A schematic diagram of the structure of a target inductor test piece for an RF GSG PAD provided in an embodiment of this application; Figure 3 Schematic diagrams of standard components for three types of radio frequency GSG PADs provided in the embodiments of this application; Figure 4 A signal flow diagram of a test piece containing an RF GSG PAD provided in an embodiment of this application; Figure 5 Signal flow diagram of a through-type standard component provided in the embodiments of this application; Figure 6 Signal flow diagram of an open-circuit standard component provided in the embodiments of this application; Figure 7 Signal flow diagram of the transmission line standard provided in the embodiments of this application; Figure 8 A structural diagram of a target inductor device provided in an embodiment of this application; Figure 9 An equivalent circuit diagram provided for an embodiment of this application; Figure 10 A structural diagram of the device for establishing the high-frequency equivalent circuit of the on-chip inductor provided in the embodiments of this application is shown. Figure 11 This is a structural diagram of an electronic device provided in an embodiment of this application. Detailed Implementation

[0024] To facilitate a clear description of the technical solutions in the embodiments of the present invention, the terms "first" and "second" are used to distinguish identical or similar items with essentially the same function and effect. For example, the first threshold and the second threshold are merely used to distinguish different thresholds and do not limit their order. Those skilled in the art will understand that the terms "first" and "second" do not limit the quantity or execution order, and that the terms "first" and "second" are not necessarily different.

[0025] It should be noted that in this invention, the terms "exemplary" or "for example" are used to indicate examples, illustrations, or descriptions. Any embodiment or design described as "exemplary" or "for example" in this invention should not be construed as being more preferred or advantageous than other embodiments or designs. Specifically, the use of terms such as "exemplary" or "for example" is intended to present the relevant concepts in a concrete manner.

[0026] In this invention, "at least one" refers to one or more, and "more than one" refers to two or more. "And / or" describes the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A alone, A and B simultaneously, or B alone, where A and B can be singular or plural. The character " / " generally indicates that the preceding and following related objects are in an "or" relationship. "At least one of the following" or similar expressions refer to any combination of these items, including any combination of single or plural items. For example, at least one of a, b, or c can represent: a, b, c, a combination of a and b, a combination of a and c, a combination of b and c, or a, b, and c, where a, b, and c can be single or multiple.

[0027] Currently, the main method for establishing the equivalent circuit of on-chip inductors is the equivalent circuit parameter identification method. This involves using the I-II type equivalent circuit topology corresponding to the inductor's current return path, and employing analytical formulas for mutual inductance of concentric half-turn inductors (for shapes such as octagons, circles, and squares) to calculate the mutual inductance between the current return path and each inductor coil, as well as the self-inductance of the return path itself. The mutual inductance between the return path and all coils is then summed to obtain a corrected model considering the DC inductance of the inductor. Next, by dividing the return path into several concentric sub-paths and combining the corrected model results, an equivalent impedance model of the return path considering the skin effect and proximity effect at high frequencies is obtained. This establishes the equivalent circuit model of the return path. Based on the corrected model and the equivalent impedance model, an equivalent circuit model of the I-II circuit structure is established. Finally, curve fitting is performed on the equivalent circuit model using test data of a single-ended inductor to obtain the parameters of each component in the equivalent circuit model.

[0028] However, the modeling process of this method is complex. How to simplify the modeling process of the equivalent circuit of on-chip inductor devices has become a technical problem that needs to be solved by those skilled in the art.

[0029] To address the problems existing in the prior art, this application provides a method, apparatus, device, and medium for establishing a high-frequency equivalent circuit of an on-chip inductor, which will be described in detail in the following embodiments.

[0030] Please refer to Figure 1 , Figure 1 A flowchart illustrating the method for establishing the high-frequency equivalent circuit of an on-chip inductor provided in this application embodiment.

[0031] like Figure 1 As shown, the method for establishing the high-frequency equivalent circuit of the on-chip inductor includes the following steps S101 to S104: S101, Based on the test piece containing the RF GSG PAD of the target inductor device, three standard pieces containing the RF GSG PAD are constructed; wherein, the test piece includes: an input GSG PAD, a target inductor device, and an output GSG PAD; the standard pieces are constructed based on the input GSG PAD and the output GSG PAD.

[0032] The RF GSG PAD test case for target inductors refers to a test structure specifically designed for RF applications. It is used to accurately measure small-signal parameters of target inductors, particularly critical characteristics such as gate capacitance. This test case optimizes electrical connections, reduces the effects of parasitic effects, and ensures high-precision measurement results by integrating a Ground-Signal-Ground (GSG) PAD.

[0033] In one alternative embodiment of this application, three standard components containing radio frequency GSG PADs are constructed, including: a through-hole (THRU) standard component, an open-hole (OPEN) standard component, and a transmission line (LINE) standard component.

[0034] Please refer to Figure 2 , Figure 2 This is a schematic diagram of the structure of a test piece for an RF GSG PAD provided in an embodiment of this application.

[0035] like Figure 2 As shown, the test piece includes: an input GSG PAD, a target inductor, and an output GSG PAD connected in series, where R represents the diameter of the target inductor, e represents the linewidth of the target inductor, and TL represents the length of the transmission line.

[0036] In practical applications, a short transmission line can lead to significant parasitic effects between the inductor, the input GSG PAD, and the output GSG PAD, affecting modeling accuracy. Conversely, a long transmission line results in a large test piece area. Therefore, in one optional embodiment of this application, the transmission line length TL of the test piece can be set to 100 μm.

[0037] Please refer to Figure 3 , Figure 3 A schematic diagram of the standard components for three radio frequency GSG PADs provided in the embodiments of this application.

[0038] like Figure 3 As shown, the straight-through standard refers to an ideal straight-through connection without any impedance mismatch, that is, the input GSG PAD and the output GSG PAD are directly connected; the open-circuit standard completely disconnects the input GSG PAD and the output GSG PAD, and is in an open-circuit state; the transmission line standard connects the input GSG PAD and the output GSG PAD through a transmission line of known length.

[0039] To ensure the modeling accuracy of the equivalent circuit at higher frequencies [50, 90] GHz, this application specifically sets the transmission line length L of the transmission line standard component, such as... Figure 3 As shown, the transmission line length of the standard transmission line component is 400μm.

[0040] Furthermore, the transmission parameters of the target inductor obtained through testing can be expressed by the following formula (1): (1); in, This indicates the transmission parameters of the test piece obtained during the test; This indicates the transmission parameters of the input GSG PAD; This represents the intrinsic transfer parameters of the target inductor device; This indicates the transmission parameters of the output GSG PAD.

[0041] Understandably, in the above formula (1) The target inductor can be tested. , , All of these are unknowns, and in order to obtain the intrinsic transfer parameters of the target inductor device... First, it is necessary to determine the transmission parameters of the input GSG PAD. and the transmission parameters of the output GSG PAD .

[0042] S102, based on the test data of the scattering parameters of the test piece and the test data of the scattering parameters of the three standard pieces, determine the admittance parameters of the target inductor.

[0043] Specifically, S102 refers to determining the transmission parameters of the input GSG PAD by combining test data of the scattering parameters of the three standard components containing the radio frequency GSG PAD. and the transmission parameters of the output GSG PAD The admittance parameters of the target inductor are then determined by the above formula (1).

[0044] By combining the test data of the scattering parameters of the three standard components containing radio frequency GSG PADs, the parasitic effects caused by the input GSG PAD and output GSG PAD connected in series with the target inductor during the testing of the test component are eliminated, so as to facilitate the subsequent construction of the equivalent circuit of the target inductor based on the admittance parameters of the target inductor.

[0045] Specifically, S102 above includes the following S1 to S4: S1. Based on the test data of the scattering parameters of the three standard components, determine the scattering parameters of the input GSG PAD and the output GSG PAD.

[0046] To calculate the transmission parameters of the input GSG PAD and the output GSG PAD, the signal flow diagram of the test piece containing the radio frequency GSG PAD is first introduced.

[0047] Please refer to Figure 4 , Figure 4 Signal flow diagram of a test piece containing an RF GSG PAD provided in an embodiment of this application.

[0048] like Figure 4 As shown, Figure 4 It includes an input GSG PAD, a target inductor, and an output GSG PAD.

[0049] Among them, E A00 E A10 E A01 E A11 This represents the scattering parameters of the input GSG PAD, which is also the signal error term that affects the actual transmission parameters of the target inductor device; E B22 E B32 E B23 E B33 This represents the scattering parameters of the output GSG PAD under the test data conditions, and is also the signal error term of the output GSG PAD that affects the actual transmission parameters of the target inductor; S11De S 21De S 12De S 22De This represents the scattering parameters of the target inductor.

[0050] For further details, please refer to... Figure 5 , Figure 5 The signal flow diagram of the through standard component provided in the embodiments of this application.

[0051] and Figure 4 Similarly, E A00 E A10 E A01 E A11 This indicates the scattering parameters input into the GSG PAD in the through-type standard component; E B22 E B32 E B23 E B33 This indicates the scattering parameters of the output GSG PAD in the through standard component.

[0052] Specifically, the relationship between the test data of the scattering parameters of the through standard component and the scattering parameters of the input GSG PAD and the output GSG PAD can be constructed using the following formulas (2) to (5).

[0053] (2); (3); (4); (5); in, , , , The test data represents the scattering parameters of the through-type standard component; This represents the reflection coefficient of the input GSG PAD in the through-type standard component; This represents the reflection coefficient of the output GSG PAD in the through-type standard component; This represents the forward transmission coefficient of the through standard component; This represents the reverse transmission coefficient of the through standard component; This represents the input reflection coefficient of the input GSG PAD; This represents the forward transmission coefficient of the input GSG PAD; This represents the reverse transmission coefficient of the input GSG PAD; This represents the output reflection coefficient of the input GSG PAD; This represents the input reflection coefficient of the output GSG PAD; This represents the forward transmission coefficient of the output GSG PAD; This represents the reverse transmission coefficient of the output GSG PAD; This represents the output reflection coefficient of the output GSG PAD.

[0054] For further details, please refer to... Figure 6 , Figure 6 Signal flow diagram of an open-circuit standard component provided in an embodiment of this application.

[0055] and Figure 4 and Figure 5 Similarly, E A00 E A10 E A01 E A11 This indicates the scattering parameters input into the GSG PAD in the open-circuit standard component; E B22 E B32 E B23 E B33 This indicates the scattering parameters of the output GSG PAD in the open-circuit standard component.

[0056] Specifically, the relationship between the test data of the scattering parameters of the open-circuit standard component and the scattering parameters of the input GSG PAD and the output GSG PAD can be constructed using the following formulas (6) and (7).

[0057] (6); (7); in, , The test data represents the scattering parameters of the open-circuit standard component; This represents the input reflection coefficient of the input GSG PAD in the open-circuit standard component; This represents the output reflection coefficient of the output GSG PAD in the open-circuit standard component; This indicates the return loss of an open-circuit standard component under open-circuit load. For further details, please refer to... Figure 7 , Figure 7 A signal flow diagram of the test piece for the inductor device of the transmission line standard provided in this application embodiment.

[0058] and Figures 4 to 6 Similarly, E A00 E A10 E A01 E A11 This indicates the scattering parameters input to the GSG PAD in the transmission line standard component; E B22 E B32 E B23E B33 This indicates the scattering parameters of the output GSG PAD in the transmission line standard component.

[0059] Specifically, the relationship between the test data of the scattering parameters of the transmission line standard and the signal errors of the input GSG PAD and the output GSG PAD can be constructed by the following formulas (8) to (11).

[0060] (8); (9); (10); (11); in, , , , Test parameters representing the scattering parameters of the transmission line standard component; This indicates the reflectivity of the high-frequency electromagnetic wave signal of the input GSG PAD in the transmission line standard component; This indicates the reflectivity of the high-frequency electromagnetic wave signal of the output GSG PAD in the transmission line standard component; This represents the scattering rate of high-frequency electromagnetic wave signals from the output GSG PAD to the input GSG PAD in the transmission line standard component; L represents the scattering rate of high-frequency electromagnetic wave signals from the input GSG PAD to the output GSG PAD in the transmission line standard component; L represents the length of the transmission line. This represents the propagation constant of the transmission line.

[0061] In the above formulas (2) to (11) , , , , , , , , , All data are known and obtained through testing. E A00 E A10 E A01 E A11 E B22 E B32 E B23 E B33For unknown data, an equation set can be constructed using the above formulas (2) to (11) to obtain the above unknown data and determine the scattering parameters of the input GSG PAD and the output GSG PAD.

[0062] S2, transform the test data of the scattering parameters of the input GSG PAD, the scattering parameters of the output GSG PAD, and the scattering parameters of the test piece to obtain the transmission parameters of the input GSG PAD, the output GSG PAD, and the test piece.

[0063] In practical applications, during the calculation of the signal error terms of the input GSG PAD and the output GSG PAD using the above formulas (2) to (11), the calculated E A00 E A10 E A01 E A11 E B22 E B32 E B23 E B33 It is in the form of high-frequency electromagnetic waves. To facilitate calculation, the electromagnetic wave parameters need to be converted to obtain relevant data in the form of electrical signals.

[0064] The specific transmission parameters of the input GSG PAD and the transmission parameters of the output GSG PAD are obtained by transformation using the following formulas (12) and (13): (12); (13); in, This indicates the transmission parameters of the input GSG PAD; This indicates the transmission parameters of the output GSG PAD; This represents the input reflection coefficient of the input GSG PAD; This represents the forward transmission coefficient of the input GSG PAD; This represents the reverse transmission coefficient of the input GSG PAD; This represents the output reflection coefficient of the input GSG PAD; This represents the input reflection coefficient of the output GSG PAD; This represents the forward transmission coefficient of the output GSG PAD; This represents the reverse transmission coefficient of the output GSG PAD; The output reflection coefficient of the output GSG PAD represents the first element of the transmission parameter matrix of the input GSG PAD; This represents the second element of the transmission parameter matrix of the input GSG PAD; This represents the third element of the transmission parameter matrix of the input GSG PAD; This represents the fourth element of the transmission parameter matrix of the input GSG PAD; This represents the first element of the transmission parameter matrix of the output GSG PAD; This represents the second element of the transmission parameter matrix of the output GSG PAD; This represents the third element of the transmission parameter matrix of the output GSG PAD; This represents the fourth element of the transmission parameter matrix of the output GSG PAD.

[0065] S3. Using the transmission parameters of the test piece, combined with the transmission parameters of the input GSG PAD and the output GSG PAD, determine the intrinsic transmission parameters of the target inductor.

[0066] Furthermore, after obtaining the transmission parameters of the input GSG PAD... and the transmission parameters of the output GSG PAD Then, the intrinsic transfer parameters of the target inductor can be determined by combining the above formula (1), that is: .

[0067] Furthermore, by mapping it to the test frequency of the target inductor, we can obtain the following formula (14): (14); in, This represents the i-th test frequency point; Indicates the test frequency point is In the case of the input GSGPAD transmission parameter matrix; Indicates the test frequency point is In the case of the output GSG PAD, the transmission parameter matrix; Indicates the test frequency point is In the case of the inductor containing the radio frequency GSG PAD, the transmission parameter matrix of the test piece; Indicates the test frequency point is In the case of the intrinsic transfer parameter matrix of the target inductor device; Indicates the test frequency point is In the case of the intrinsic transmission parameter matrix, the first element; Indicates the test frequency point is In the case of the second element of the intrinsic transmission parameter matrix; Indicates the test frequency point is In the case of the third element of the intrinsic transmission parameter matrix; Indicates the test frequency point is In the case of the intrinsic transmission parameter matrix, the fourth element is...

[0068] S4, the intrinsic transfer parameters of the target inductor are transformed into admittance parameters to obtain the admittance parameters of the target inductor.

[0069] Furthermore, in order to determine the equivalent circuit of the target inductor, it is necessary to further transform the intrinsic transfer parameters of the target inductor into admittance parameters.

[0070] Specifically, admittance parameters .

[0071] in, , , , It can be obtained through the following formulas (15) to (18): (15); (16); (17); (18); in, Indicates the test frequency point is In the case of the target inductor, the admittance parameter matrix; Indicates the test frequency point is In the case of the target inductor device, the first admittance parameter of the admittance parameter matrix; Indicates the test frequency point is In the case of the target inductor device, the second admittance parameter of the admittance parameter matrix; Indicates the test frequency point is In the case of the target inductor, the third admittance parameter of the admittance parameter matrix; Indicates the test frequency point is In the case of the target inductor, the fourth admittance parameter of the admittance parameter matrix; Indicates the test frequency point is In the case of the intrinsic transmission parameter matrix, the first element; Indicates the test frequency point is In the case of the second element of the intrinsic transmission parameter matrix; Indicates the test frequency point is In the case of the third element of the intrinsic transmission parameter matrix; Indicates the test frequency point is In the case of the fourth element of the intrinsic transmission parameter matrix; This indicates the characteristic impedance, typically 50 ohms.

[0072] S103, using vector fitting black-box modeling, a pole-residue model of the target inductor is established based on the admittance parameters of the target inductor.

[0073] The pole-residue model is a mathematical tool used to describe the frequency response characteristics of complex systems. In circuit modeling, this model approximates actual test data through combinations of poles and residues, thereby simplifying the dynamic behavior of high-frequency circuits into equivalent circuit networks. In the pole-residue model, each pole-residue pair corresponds to a parallel branch equivalent circuit. In the embodiments of this application, the pole-residue model is used to represent the relationship between the admittance parameter and frequency of the target inductor at each test frequency.

[0074] In this embodiment of the application, the admittance parameter is obtained through the above S102. Then, the admittance parameters can be... The pole-residue model is constructed based on this.

[0075] Specifically, the target inductor device can be understood as a kind of For devices with this type of structure, please refer to... Figure 8 , Figure 8 This is a structural diagram of a target inductor device provided in an embodiment of this application.

[0076] like Figure 8 As shown, the target inductor device comprises three parts, which They are Y1, Y2, and Y3 respectively. Its corresponding admittance parameters can be expressed by the following formulas (19) to (21): (19); (20); (twenty one); Furthermore, construct the above-mentioned structures respectively. , as well as pole-residue model pole-residue model Where a = 1, 2, 3 can be represented by the following formula (22): (twenty two); in, ; ; ; ; ; ; ; ; The pole-residue model of the a-th part of the target inductor device; d is the constant term of the pole-residue model; Ns is the real residue or the number of real poles in the pole-residue model; This represents the nth real residue of the pole-residue model. Nc represents the nth real pole of the pole-residue model; Nc is the complex residue or the number of complex poles in the pole-residue model. This represents the k-th complex residue of the pole-residue model. for The conjugate of complex numbers; for The real part; for The imaginary part; Let k be the complex pole value of the pole-residue model. for The conjugate of complex numbers; for The real part; for The imaginary part; , Let represent the i-th test frequency point; d is the constant term of the pole-residue model. This indicates the resistance value of the first resistor of the target inductor; This represents the inductance value of branch n in the equivalent circuit of the target inductor device; This represents the resistance value of branch n in the equivalent circuit of the target inductor. This represents the inductance value of branch k in the equivalent circuit of the target inductor device; This represents the resistance value of branch k in the equivalent circuit of the target inductor. This represents the capacitance value of branch k in the equivalent circuit of the target inductor. This represents the conductance value of branch k in the equivalent circuit of the target inductor.

[0077] To facilitate understanding of the row number pole-residue model, the following uses pole-residue model Let's take an example to explain in detail.

[0078] for In other words (i.e.) Figure 8The part corresponding to Y1), its corresponding pole-residue model can be expressed by the following formula (23).

[0079] (twenty three); in, , This represents the i-th test frequency point, obtained after obtaining the corresponding values ​​for each test frequency point. After that, I received The curve showing the change with the test frequency can be further adjusted by the above. , , , , , , The magnitude of the value is used to fit the change curve, thereby determining... , , , , , , , The numerical value.

[0080] S104. Based on the pole-residue model, construct the on-chip high-frequency equivalent circuit of the target inductor device, and determine the values ​​of each component in the on-chip high-frequency equivalent circuit.

[0081] In obtaining the pole-residue model , , , , , , Once the numerical value is determined, the on-chip high-frequency equivalent circuit of the target inductor device can be constructed.

[0082] In this embodiment of the application, the equivalent circuit structure corresponding to Y1 is still taken as an example.

[0083] Please refer to Figure 9 , Figure 9 An equivalent circuit structure diagram is provided for an embodiment of this application.

[0084] like Figure 9 As shown, the equivalent circuit structure includes: having a first resistor The side road; An inductor is connected in series. and resistance The branches, where n is a positive integer, n=1, 2, ... .

[0085] An inductor is connected in series. ,resistance And a branch of a parallel sub-circuit, the parallel sub-circuit comprising: parallel conductances and capacitor ,in, It is a positive integer. =1, 2, ..., .

[0086] In summary, the method for establishing the equivalent circuit of an on-chip high-frequency inductor provided in this application determines the admittance parameters of the target inductor by combining the scattering parameter test data of three standard target inductor devices containing RF GSG PADs. Simultaneously, based on the admittance parameters of the target inductor, a pole-residue model of the target inductor is constructed using vector fitting black-box modeling. This model converts the admittance parameters into physical circuit elements, avoiding the complex analytical calculations of traditional methods. It directly models the circuit structure based on data, simplifying the modeling of the equivalent circuit of the on-chip high-frequency inductor and improving the modeling efficiency of the equivalent circuit.

[0087] This application also provides an apparatus for constructing a high-frequency equivalent circuit for an on-chip inductor. Please refer to [link / reference]. Figure 10 , Figure 10 This is a structural diagram of the device for establishing the high-frequency equivalent circuit of the on-chip inductor provided in the embodiments of this application.

[0088] The test piece and standard piece construction unit 1001 is used to construct three standard pieces containing radio frequency GSG PADs based on the test piece containing the target inductor device; wherein, the test piece includes: an input GSG PAD, a target inductor device, and an output GSG PAD; the standard pieces are constructed based on the input GSG PAD and the output GSG PAD.

[0089] The admittance parameter acquisition unit 1002 is used to determine the admittance parameter of the target inductor based on the test data of the scattering parameters of the test piece and the test data of the scattering parameters of the three standard pieces.

[0090] The vector fitting modeling unit 1003 is used to establish the pole-residue model of the target inductor device based on the admittance parameters of the target inductor device by means of vector fitting black box modeling.

[0091] The equivalent circuit determination unit 1004 is used to construct the on-chip high-frequency equivalent circuit of the target inductor device based on the pole-residue model, and to determine the values ​​of each component in the on-chip high-frequency equivalent circuit.

[0092] In one optional embodiment of this application, the pole-residue model is expressed by the following formula: ; in, ; ; ; ; ; ; ; ; The pole-residue model of the a-th part of the target inductor; d is the constant term of the pole-residue model; The number of real residues or real poles in the pole-residue model; This represents the nth real residue of the pole-residue model. This represents the nth real pole of the pole-residue model. The complex residue or the number of complex poles in the pole-residue model; This represents the k-th complex residue of the pole-residue model. for The conjugate of complex numbers; for The real part; for The imaginary part; Let k be the complex pole value of the pole-residue model. for The conjugate of complex numbers; for The real part; for The imaginary part; , Let represent the i-th test frequency point; d is the constant term of the pole-residue model. This indicates the resistance value of the first resistor of the target inductor; This represents the inductance value of branch n in the equivalent circuit of the target inductor device; This represents the resistance value of branch n in the equivalent circuit of the target inductor. This represents the inductance value of branch k in the equivalent circuit of the target inductor device; This represents the resistance value of branch k in the equivalent circuit of the target inductor. This represents the capacitance value of branch k in the equivalent circuit of the target inductor. This represents the conductance value of branch k in the equivalent circuit of the target inductor.

[0093] In one optional embodiment of this application, determining the admittance parameter of the target inductor based on the test data of the scattering parameters of the test piece and the test data of the scattering parameters of the three standard pieces includes: determining the scattering parameters of the input GSG PAD and the output GSG PAD by combining the test data of the scattering parameters of the three standard pieces; transforming the test data of the scattering parameters of the input GSG PAD, the output GSG PAD, and the test piece to obtain the transmission parameters of the input GSG PAD, the output GSG PAD, and the test piece; using the transmission parameters of the test piece, combined with the transmission parameters of the input GSG PAD and the output GSG PAD, determining the intrinsic transmission parameters of the target inductor; and transforming the intrinsic transmission parameters of the target inductor into admittance parameters to obtain the admittance parameters of the target inductor.

[0094] In one alternative embodiment of this application, at least three types of standard components containing an RF GSD PAD include: a through standard component, an open standard component, and a transmission line standard component. The scattering parameters of the input GSG PAD and the output GSG PAD are determined by the following formula: ; ; ; ; in, , , , The test data represents the scattering parameters of the through-type standard component; This represents the reflection coefficient of the input GSG PAD in the through-type standard component; This represents the reflection coefficient of the output GSG PAD in the through-type standard component; This represents the forward transmission coefficient of the through standard component; This represents the reverse transmission coefficient of the through standard component; This represents the input reflection coefficient of the input GSG PAD; This represents the forward transmission coefficient of the input GSG PAD; This represents the reverse transmission coefficient of the input GSG PAD; This represents the output reflection coefficient of the input GSG PAD; This represents the input reflection coefficient of the output GSG PAD; This represents the forward transmission coefficient of the output GSG PAD; This represents the reverse transmission coefficient of the output GSG PAD; This represents the output reflection coefficient of the output GSG PAD.

[0095] ; ; in, , The test data represents the scattering parameters of the open-circuit standard component; This represents the input reflection coefficient of the input GSG PAD in the open-circuit standard component; This represents the output reflection coefficient of the output GSG PAD in the open-circuit standard component; This indicates the return loss of an open-circuit standard component under open-circuit load. ; ; ; ; in, , , , Test parameters representing the scattering parameters of the transmission line standard component; This indicates the reflectivity of the high-frequency electromagnetic wave signal of the input GSG PAD in the transmission line standard component; This indicates the reflectivity of the high-frequency electromagnetic wave signal of the output GSG PAD in the transmission line standard component; This represents the scattering rate of high-frequency electromagnetic wave signals from the output GSG PAD to the input GSG PAD in the transmission line standard component; L represents the scattering rate of high-frequency electromagnetic wave signals from the input GSG PAD to the output GSG PAD in the transmission line standard component; L represents the length of the transmission line. This represents the propagation constant of the transmission line.

[0096] In one optional embodiment of this application, the transmission parameters of the input GSG PAD and the transmission parameters of the output GSG PAD are obtained by the following formula transformation: ; ; in, This indicates the transmission parameters of the input GSG PAD; This indicates the transmission parameters of the output GSG PAD; This represents the input reflection coefficient of the input GSG PAD; This represents the forward transmission coefficient of the input GSG PAD; This represents the reverse transmission coefficient of the input GSG PAD; This represents the output reflection coefficient of the input GSG PAD; This represents the input reflection coefficient of the output GSG PAD; This represents the forward transmission coefficient of the output GSG PAD; This represents the reverse transmission coefficient of the output GSG PAD; The output reflection coefficient of the output GSG PAD represents the first element of the transmission parameter matrix of the input GSG PAD; This represents the second element of the transmission parameter matrix of the input GSG PAD; This represents the third element of the transmission parameter matrix of the input GSG PAD; This represents the fourth element of the transmission parameter matrix of the input GSG PAD; This represents the first element of the transmission parameter matrix of the output GSG PAD; This represents the second element of the transmission parameter matrix of the output GSG PAD; This represents the third element of the transmission parameter matrix of the output GSG PAD; This represents the fourth element of the transmission parameter matrix of the output GSG PAD.

[0097] In one optional embodiment of this application, the intrinsic transmission parameters of the target inductor are determined by combining the transmission parameters of the test piece with the transmission parameters of the input GSG PAD and the output GSG PAD using the following formula: ; in, This represents the i-th test frequency point; Indicates the test frequency point is In the case of the input GSGPAD transmission parameter matrix; Indicates the test frequency point is In the case of the output GSG PAD, the transmission parameter matrix; Indicates the test frequency point is In the case of the inductor containing the radio frequency GSG PAD, the transmission parameter matrix of the test piece; Indicates the test frequency point is In the case of the intrinsic transfer parameter matrix of the target inductor device; Indicates the test frequency point is In the case of the intrinsic transmission parameter matrix, the first element; Indicates the test frequency point is In the case of the second element of the intrinsic transmission parameter matrix; Indicates the test frequency point is In the case of the third element of the intrinsic transmission parameter matrix; Indicates the test frequency point is In the case of the intrinsic transmission parameter matrix, the fourth element is...

[0098] In one optional embodiment of this application, the admittance parameter of the target inductor is obtained by transforming the intrinsic transfer parameters of the target inductor into admittance parameters using the following formula: ; ; ; ; ; in, Indicates the test frequency point is In the case of the target inductor, the admittance parameter matrix; Indicates the test frequency point is In the case of the target inductor device, the first admittance parameter of the admittance parameter matrix; Indicates the test frequency point is In the case of the target inductor device, the second admittance parameter of the admittance parameter matrix; Indicates the test frequency point is In the case of the target inductor, the third admittance parameter of the admittance parameter matrix; Indicates the test frequency point is In the case of the target inductor, the fourth admittance parameter of the admittance parameter matrix; Indicates the test frequency point is In the case of the intrinsic transmission parameter matrix, the first element; Indicates the test frequency point is In the case of the second element of the intrinsic transmission parameter matrix; Indicates the test frequency point is In the case of the third element of the intrinsic transmission parameter matrix; Indicates the test frequency point is In the case of the fourth element of the intrinsic transmission parameter matrix; This represents the characteristic impedance.

[0099] Compared with the prior art, the beneficial effects of the on-chip inductor high-frequency equivalent circuit establishment device provided by the present invention are the same as those of the on-chip inductor high-frequency equivalent circuit establishment method described in the above technical solution, and will not be repeated here.

[0100] This application also provides an electronic device, please refer to... Figure 11 , Figure 11 This is a structural diagram of an electronic device provided in an embodiment of this application.

[0101] like Figure 11 As shown, the electronic device 400 includes a processor 410.

[0102] like Figure 11 As shown, the processor 410 described above can be a general-purpose central processing unit (CPU), a microprocessor, an application-specific integrated circuit (ASIC), or one or more integrated circuits used to control the execution of the program of the present invention.

[0103] like Figure 11 As shown, the electronic device 400 may further include a communication line 440. The communication line 440 may include a path for transmitting information between the components.

[0104] Optional, such as Figure 11 As shown, the above-described electronic device may further include a communication interface 420. There may be one or more communication interfaces 420. The communication interface 420 may use any transceiver-like device for communicating with other devices or communication networks.

[0105] Optional, such as Figure 11 As shown, the electronic device may further include a memory 430. The memory 430 stores computer execution instructions for implementing the present invention, and its execution is controlled by a processor. The processor executes the computer execution instructions stored in the memory to implement the method provided in the embodiments of the present invention.

[0106] like Figure 11As shown, memory 430 can be read-only memory (ROM) or other types of static storage devices capable of storing static information and instructions, random access memory (RAM) or other types of dynamic storage devices capable of storing information and instructions, or electrically erasable programmable read-only memory (EEPROM), compact disc read-only memory (CD-ROM) or other optical disc storage, optical disc storage (including compressed optical discs, laser discs, optical discs, digital universal optical discs, Blu-ray discs, etc.), magnetic disk storage media or other magnetic storage devices, or any other medium capable of carrying or storing desired program code in the form of instructions or data structures and accessible by a computer, but not limited thereto. Memory 430 can exist independently and be connected to processor 410 via communication line 440. Memory 430 can also be integrated with processor 410.

[0107] Optionally, the computer execution instructions in the embodiments of the present invention may also be referred to as application code, and the embodiments of the present invention do not specifically limit this.

[0108] In a specific implementation, as one example, such as Figure 11 As shown, processor 410 may include one or more CPUs, such as Figure 11 CPU0 and CPU1 in the CPU.

[0109] In a specific implementation, as one example, such as Figure 8 As shown, the terminal device may include multiple processors, such as Figure 11 The first processor 4101 and the second processor 4102 are included. Each of these processors can be a single-core processor or a multi-core processor.

[0110] The methods disclosed in the above embodiments of the present invention can be applied to a processor or implemented by a processor. The processor may be an integrated circuit chip with signal processing capabilities. During implementation, each step of the above methods can be completed by integrated logic circuits in the processor's hardware or by instructions in software form. The processor can be a general-purpose processor, a digital signal processor (DSP), an ASIC, a field-programmable gate array (FPGA), or other programmable logic devices, discrete gate or transistor logic devices, or discrete hardware components. It can implement or execute the methods, steps, and logic block diagrams disclosed in the embodiments of the present invention. The general-purpose processor can be a microprocessor or any conventional processor. The steps of the methods disclosed in the embodiments of the present invention can be directly embodied in the execution of a hardware decoding processor, or executed by a combination of hardware and software modules in the decoding processor. The software modules can reside in random access memory, flash memory, read-only memory, programmable read-only memory, electrically erasable programmable memory, registers, or other mature storage media in the art. This storage medium is located in memory; the processor reads information from the memory and, in conjunction with its hardware, completes the steps of the above methods.

[0111] This application also provides a computer-readable storage medium storing instructions that, when executed, implement the functions performed by the terminal device in the above embodiments.

[0112] In the above embodiments, implementation can be achieved entirely or partially through software, hardware, firmware, or any combination thereof. When implemented using software, it can be implemented entirely or partially in the form of a computer program product. The computer program product includes one or more computer programs or instructions. When the computer program or instructions are loaded and executed on a computer, the processes or functions described in the embodiments of the present invention are performed entirely or partially. The computer can be a general-purpose computer, a special-purpose computer, a computer network, a terminal, a user equipment, or other programmable device. The computer program or instructions can be stored in a computer-readable storage medium or transferred from one computer-readable storage medium to another. For example, the computer program or instructions can be transferred from one website, computer, server, or data center to another website, computer, server, or data center via wired or wireless means. The computer-readable storage medium can be any available medium that a computer can access or a data storage device such as a server or data center that integrates one or more available media. The available medium can be a magnetic medium, such as a floppy disk, hard disk, or magnetic tape; it can also be an optical medium, such as a digital video disc (DVD); or it can be a semiconductor medium, such as a solid-state drive (SSD).

[0113] Although the invention has been described herein in conjunction with various embodiments, those skilled in the art will understand and implement other variations of the disclosed embodiments by reviewing the accompanying drawings, the disclosure, and the appended claims in carrying out the claimed invention. In the claims, the word "comprising" does not exclude other components or steps, and "a" or "an" does not exclude a plurality. A single processor or other unit can implement several functions listed in the claims. While different dependent claims may recite certain measures, this does not mean that these measures cannot be combined to produce good results.

[0114] Although the invention has been described in conjunction with specific features and embodiments, it is obvious that various modifications and combinations can be made therein without departing from the spirit and scope of the invention. Accordingly, this specification and drawings are merely exemplary descriptions of the invention as defined by the appended claims, and are considered to cover any and all modifications, variations, combinations, or equivalents within the scope of the invention. Clearly, those skilled in the art can make various alterations and modifications to the invention without departing from its spirit and scope. Thus, if such modifications and modifications of the invention fall within the scope of the claims and their equivalents, the invention is also intended to include such modifications and modifications.

Claims

1. A method for establishing a high-frequency equivalent circuit of an on-chip inductor, characterized in that, include: Based on a test piece containing an RF GSG PAD for a target inductor, three standard pieces containing RF GSG PADs are constructed; wherein, the test piece includes: an input GSG PAD, a target inductor, and an output GSG PAD; the standard pieces are constructed based on the input GSG PAD and the output GSG PAD; Based on the test data of the scattering parameters of the test piece and the test data of the scattering parameters of the three standard pieces, the admittance parameters of the target inductor are determined. By using vector fitting black-box modeling, a pole-residue model of the target inductor is established based on the admittance parameters of the target inductor. Based on the pole-residue model, the on-chip high-frequency equivalent circuit of the target inductor is constructed, and the values ​​of each component in the on-chip high-frequency equivalent circuit are determined.

2. The method according to claim 1, characterized in that, The pole-residue model is expressed by the following formula: ； in, ; ; ; ; ; ; ; ; The pole-residue model of the a-th part of the target inductor; d is the constant term of the pole-residue model; The number of real residues or real poles in the pole-residue model; This represents the nth real residue of the pole-residue model. This represents the nth real pole of the pole-residue model. The complex residue or the number of complex poles in the pole-residue model; This represents the k-th complex residue of the pole-residue model. for The conjugate of complex numbers; for The real part; for The imaginary part; Let k be the complex pole value of the pole-residue model. for The conjugate of complex numbers; for The real part; for The imaginary part; , Let represent the i-th test frequency point; d is the constant term of the pole-residue model. This indicates the resistance value of the first resistor of the target inductor; This represents the inductance value of branch n in the equivalent circuit of the target inductor device; This represents the resistance value of branch n in the equivalent circuit of the target inductor. This represents the inductance value of branch k in the equivalent circuit of the target inductor device; This represents the resistance value of branch k in the equivalent circuit of the target inductor. This represents the capacitance value of branch k in the equivalent circuit of the target inductor. This represents the conductance value of branch k in the equivalent circuit of the target inductor.

3. The method according to claim 1, characterized in that, The determination of the admittance parameters of the target inductor based on the test data of the scattering parameters of the test piece and the test data of the scattering parameters of the three standard pieces includes: By combining the test data of the scattering parameters of the three standard components, the scattering parameters of the input GSG PAD and the output GSG PAD are determined; The test data of the scattering parameters of the input GSG PAD, the scattering parameters of the output GSG PAD, and the scattering parameters of the test piece are transformed to obtain the transmission parameters of the input GSG PAD, the output GSG PAD, and the test piece. Using the transmission parameters of the test piece, combined with the transmission parameters of the input GSG PAD and the output GSG PAD, the intrinsic transmission parameters of the target inductor are determined. The intrinsic transfer parameters of the target inductor are transformed into admittance parameters to obtain the admittance parameters of the target inductor.

4. The method according to claim 3, characterized in that, At least three types of standard components containing an RF GSD PAD include: through standard components, open-circuit standard components, and transmission line standard components; The scattering parameters of the input GSG PAD and the output GSG PAD are determined by the following formula: ； ； ； ； in, , , , The test data represents the scattering parameters of the through-type standard component; This represents the reflection coefficient of the input GSG PAD in the through-type standard component; This represents the reflection coefficient of the output GSG PAD in the through-type standard component; This represents the forward transmission coefficient of the through standard component; This represents the reverse transmission coefficient of the through standard component; This represents the input reflection coefficient of the input GSG PAD; This represents the forward transmission coefficient of the input GSG PAD; This represents the reverse transmission coefficient of the input GSG PAD; This represents the output reflection coefficient of the input GSG PAD; This represents the input reflection coefficient of the output GSG PAD; This represents the forward transmission coefficient of the output GSG PAD; This represents the reverse transmission coefficient of the output GSG PAD; This represents the output reflection coefficient of the output GSG PAD.

5. ； ； in, , The test data represents the scattering parameters of the open-circuit standard component; This represents the input reflection coefficient of the input GSG PAD in the open-circuit standard component; This represents the output reflection coefficient of the output GSG PAD in the open-circuit standard component; This indicates the return loss of an open-circuit standard component under open-circuit load. ； ； ； ； in, , , , Test parameters representing the scattering parameters of the transmission line standard component; This indicates the reflectivity of the high-frequency electromagnetic wave signal of the input GSG PAD in the transmission line standard component; This indicates the reflectivity of the high-frequency electromagnetic wave signal of the output GSG PAD in the transmission line standard component; This represents the scattering rate of high-frequency electromagnetic wave signals from the output GSG PAD to the input GSG PAD in the transmission line standard component; L represents the scattering rate of high-frequency electromagnetic wave signals from the input GSG PAD to the output GSG PAD in the transmission line standard component; L represents the length of the transmission line. This represents the propagation constant of the transmission line.

6. The method according to claim 3, characterized in that, The transmission parameters of the input GSG PAD and the transmission parameters of the output GSG PAD are obtained by the following formula: ； ； in, This indicates the transmission parameters of the input GSG PAD; This indicates the transmission parameters of the output GSG PAD; This represents the input reflection coefficient of the input GSG PAD; This represents the forward transmission coefficient of the input GSG PAD; This represents the reverse transmission coefficient of the input GSG PAD; This represents the output reflection coefficient of the input GSG PAD; This represents the input reflection coefficient of the output GSG PAD; This represents the forward transmission coefficient of the output GSG PAD; This represents the reverse transmission coefficient of the output GSG PAD; The output reflection coefficient of the output GSG PAD represents the first element of the transmission parameter matrix of the input GSG PAD; This represents the second element of the transmission parameter matrix of the input GSG PAD; This represents the third element of the transmission parameter matrix of the input GSG PAD; This represents the fourth element of the transmission parameter matrix of the input GSG PAD; This represents the first element of the transmission parameter matrix of the output GSG PAD; This represents the second element of the transmission parameter matrix of the output GSG PAD; This represents the third element of the transmission parameter matrix of the output GSGPAD; This represents the fourth element of the transmission parameter matrix of the output GSG PAD.

7. The method according to claim 3, characterized in that, The intrinsic transmission parameters of the target inductor are determined by using the transmission parameters of the test piece, combined with the transmission parameters of the input GSG PAD and the output GSG PAD, through the following formula: ； in, This represents the i-th test frequency point; Indicates the test frequency point is In the case of the input GSG PAD, the transmission parameter matrix; Indicates the test frequency point is In the case of the output GSG PAD, the transmission parameter matrix; Indicates the test frequency point is In the case of the inductor containing the radio frequency GSG PAD, the transmission parameter matrix of the test piece; Indicates the test frequency point is In the case of the intrinsic transfer parameter matrix of the target inductor device; Indicates the test frequency point is In the case of the intrinsic transmission parameter matrix, the first element; Indicates the test frequency point is In the case of the second element of the intrinsic transmission parameter matrix; Indicates the test frequency point is In the case of the third element of the intrinsic transmission parameter matrix; Indicates the test frequency point is In the case of the intrinsic transmission parameter matrix, the fourth element is...

8. The method according to claim 3, characterized in that, The admittance parameter of the target inductor is obtained by transforming its intrinsic transfer parameters into admittance parameters using the following formula: ； ； ； ； ； in, Indicates the test frequency point is In the case of the target inductor, the admittance parameter matrix; Indicates the test frequency point is In the case of the target inductor device, the first admittance parameter of the admittance parameter matrix; Indicates the test frequency point is In the case of the target inductor device, the second admittance parameter of the admittance parameter matrix; Indicates the test frequency point is In the case of the target inductor, the third admittance parameter of the admittance parameter matrix; Indicates the test frequency point is In the case of the target inductor, the fourth admittance parameter of the admittance parameter matrix; Indicates the test frequency point is In the case of the intrinsic transmission parameter matrix, the first element; Indicates the test frequency point is In the case of the second element of the intrinsic transmission parameter matrix; Indicates the test frequency point is In the case of the third element of the intrinsic transmission parameter matrix; Indicates the test frequency point is In the case of the fourth element of the intrinsic transmission parameter matrix; This represents the characteristic impedance.

9. A device for establishing a high-frequency equivalent circuit of an on-chip inductor, characterized in that, include: A standard component construction unit is used to construct three standard components containing an RF GSG PAD based on a test component containing an RF GSG PAD of a target inductor device; wherein, the test component includes: an input GSG PAD, a target inductor device, and an output GSG PAD; the standard component is constructed based on the input GSG PAD and the output GSG PAD; The admittance parameter acquisition unit is used to determine the admittance parameter of the target inductor based on the test data of the scattering parameters of the test piece and the test data of the scattering parameters of the three standard pieces. The vector fitting modeling unit is used to establish the pole-residue model of the target inductor device based on the admittance parameters of the target inductor device by means of vector fitting black box modeling. The equivalent circuit determination unit is used to construct the on-chip high-frequency equivalent circuit of the target inductor device based on the pole-residue model, and to determine the values ​​of each component in the on-chip high-frequency equivalent circuit.

10. An electronic device, characterized in that, include: Memory used to store the processor's executable instructions; The processor is configured to execute the on-chip inductor high-frequency equivalent circuit establishment method according to any one of claims 1 to 7 by running instructions in the memory.

11. A computer storage medium, characterized in that, The computer storage medium stores instructions that, when executed, implement the method for establishing the on-chip inductor high-frequency equivalent circuit according to any one of claims 1 to 7.

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