Micro-disk structure semiconductor laser and preparation method thereof

Abstract

The invention provides a micro-disk structure semiconductor laser and a preparation method, and belongs to the technical field of semiconductor lasers. The high-concentration Zn-doped p-GaAs multi-quantum-well multi-quantum-well light-emitting diode comprises a SiO2 barrier layer, an n-GaAs substrate with the thickness of 100 microns, an n-GaAs contact layer with the thickness of 100 nm, a Si-doped n-AlGaInP limiting layer with the thickness of 200 nm, an n-AlGaInP waveguide layer with the thickness of 400 nm, a first GaInP / AlGaInP multi-quantum-well layer, a GaAs barrier layer, a second GaInP / AlGaInP multi-quantum-well layer, an undoped p-AlGaAs waveguide layer with the thickness of 150 nm, a Zn-doped p-AlGaInP limiting layer with the thickness of 200 nm and a high-concentration Zn-doped p-GaAs contact layer with the thickness of 100 nm. By controlling the thickness and the doping concentration of each layer, efficient limitation and injection of carriers are realized; due to the design of the double multi-quantum well layer and the barrier layer, the device can realize stable lasing in two wavebands of 808nm and 650nm; the undoped waveguide layer effectively reduces the optical loss, prolongs the photon lifetime, and improves the laser output efficiency. And the quantum efficiency and the temperature stability of the device are improved.

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