Method for removing attachments on surface of semiconductor

Abstract

The invention discloses a method for removing attachments on the surface of a semiconductor. The method comprises the steps that the semiconductor with the attachments on the surface is placed at the laser focal plane position of a pulse laser in a vacuum chamber; carrying out laser scanning on the surface of the semiconductor by adopting the pulse laser, so that the attachments are converted into dust particles; and dust particles in the vacuum chamber are removed, so that the attachments are removed. According to the technical scheme, laser scanning cleaning treatment is carried out on the surface of the semiconductor, attachments on the surface of the semiconductor can be effectively removed, and secondary pollution to the environment is avoided.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and in particular to a method for removing deposits on semiconductor surfaces. Background Technology

[0002] Currently, during the semiconductor manufacturing process, some deposits (such as oxides) often form on the surface. These deposits are generally difficult to remove directly, thus requiring surface cleaning. However, existing cleaning methods cannot effectively remove these deposits completely and can easily cause secondary pollution to the environment. Summary of the Invention

[0003] The purpose of this invention is to provide a method for removing deposits on semiconductor surfaces. By performing laser scanning cleaning on the semiconductor surface, deposits can be effectively removed without causing secondary pollution to the environment.

[0004] To achieve the above objectives, embodiments of the present invention provide a method for removing deposits on a semiconductor surface, comprising:

[0005] The laser focal plane of a pulsed laser is placed in a vacuum chamber with semiconductors having deposits on their surface.

[0006] The surface of the semiconductor is scanned using the pulsed laser, causing the deposits to be converted into dust particles;

[0007] Remove dust particles from the vacuum chamber to remove the attached material.

[0008] Furthermore, the pulsed laser has a wavelength of 532nm, a pulse frequency of 1-60Hz, and a pulse width of 60-65nm.

[0009] Furthermore, the pulsed laser has an average power of less than 800W and an energy density of 1.5–2.0 J / cm². 2 .

[0010] Furthermore, the laser scanning speed is 25 mm / s.

[0011] Furthermore, the laser scanning time is 100–150 min.

[0012] Compared with existing technologies, this invention provides a method for removing deposits from semiconductor surfaces. First, the semiconductor with deposits is placed at the focal plane of a pulsed laser within a vacuum chamber. Then, the surface of the semiconductor is scanned using the pulsed laser, causing the deposits to transform into dust particles. Finally, the dust particles in the vacuum chamber are removed to clean the deposits from the semiconductor surface. This invention effectively removes deposits from semiconductor surfaces through laser scanning cleaning without causing secondary pollution to the environment. Attached Figure Description

[0013] Figure 1 This is a flowchart of a preferred embodiment of a method for removing deposits on a semiconductor surface provided by the present invention. Detailed Implementation

[0014] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0015] This invention provides a method for removing deposits from semiconductor surfaces, see [link to relevant documentation]. Figure 1 The diagram shown is a flowchart of a preferred embodiment of a method for removing deposits on a semiconductor surface provided by the present invention, the method comprising steps S11 to S13:

[0016] Step S11: Place the semiconductor with deposits on its surface at the laser focal plane position of the pulsed laser in the vacuum chamber;

[0017] Step S12: Use the pulsed laser to perform laser scanning on the surface of the semiconductor, so that the deposits are transformed into dust particles;

[0018] Step S13: Remove dust particles from the vacuum chamber to remove the attached material.

[0019] In practice, firstly, a semiconductor with deposits (mainly deposited oxides and other impurities) on its surface is placed in a vacuum chamber, and the surface of the semiconductor is positioned at the focal plane of a pulsed laser. Then, under vacuum conditions, the surface of the semiconductor is scanned by a pulsed laser. After the laser scanning process, the deposits on the semiconductor surface are transformed into tiny dust particles suspended in the vacuum chamber. Finally, a vacuum pumping device is used to remove all the suspended dust particles from the vacuum chamber, thereby achieving the purpose of removing the deposits from the semiconductor surface.

[0020] In one optional embodiment, the pulsed laser has a wavelength of 532 nm, a pulse frequency of 1–60 Hz, and a pulse width of 60–65 nm.

[0021] Specifically, in conjunction with the above embodiments, the pulsed laser used in the embodiments of the present invention has a wavelength of 532nm, a pulse frequency of 1Hz to 60Hz, and a pulse width of 60nm to 65nm. Correspondingly, in a vacuum state, a pulsed laser with a wavelength of 532nm, a pulse frequency of 1Hz to 60Hz, and a pulse width of 60nm to 65nm can be used to perform laser scanning processing on the surface of a semiconductor.

[0022] For example, the pulse frequency can be 1Hz, 5Hz, 10Hz, 15Hz, 20Hz, 25Hz, 30Hz, 35Hz, 40Hz, 45Hz, 50Hz, 55Hz or 60Hz, and can also be set according to actual needs. This embodiment of the invention does not make specific limitations.

[0023] For example, the pulse width can be 60nm, 61nm, 62nm, 63nm, 64nm or 65nm, and can also be set according to actual needs. This embodiment of the invention does not make specific limitations.

[0024] In one alternative embodiment, the pulsed laser has an average power of less than 800 W and an energy density of 1.5–2.0 J / cm². 2 .

[0025] Specifically, in conjunction with the above embodiments, the pulsed laser used in these embodiments has an average power of less than 800W and an energy density of 1.5J / cm². 2 ~2.0J / cm 2 Correspondingly, under vacuum conditions, a wavelength of 532nm, a pulse frequency of 1Hz to 60Hz, a pulse width of 60nm to 65nm, an average power of less than 800W, and an energy density of 1.5J / cm² can be used. 2 ~2.0J / cm 2 A pulsed laser is used to perform laser scanning on the surface of a semiconductor.

[0026] For example, the energy density can be 1.5 J / cm³. 2 1.6J / cm 2 1.7J / cm 2 1.8J / cm 2 1.9J / cm 2 Or 2.0 J / cm 2 The settings can also be configured according to actual needs, and the embodiments of the present invention do not impose specific limitations.

[0027] In one alternative embodiment, the laser scanning speed is 25 mm / s.

[0028] Specifically, in conjunction with the above embodiments, when using a pulsed laser to perform laser scanning on the surface of a semiconductor, the laser scanning speed is 25 mm / s. Correspondingly, under vacuum conditions, a laser with a wavelength of 532 nm, a pulse frequency of 1 Hz to 60 Hz, a pulse width of 60 nm to 65 nm, an average power of less than 800 W, and an energy density of 1.5 J / cm² can be used. 2 ~2.0J / cm 2 A pulsed laser is used to perform laser scanning on the surface of a semiconductor at a laser scanning speed of 25 mm / s.

[0029] In one optional embodiment, the laser scanning time is 100–150 min.

[0030] Specifically, in conjunction with the above embodiments, when using a pulsed laser to perform laser scanning on the surface of a semiconductor, the laser scanning time is 100 min to 150 min. Correspondingly, under vacuum conditions, a wavelength of 532 nm, a pulse frequency of 1 Hz to 60 Hz, a pulse width of 60 nm to 65 nm, an average power of less than 800 W, and an energy density of 1.5 J / cm² can be used. 2 ~2.0J / cm 2 A pulsed laser is used to perform laser scanning on the surface of a semiconductor for 100 to 150 minutes at a laser scanning speed of 25 mm / s.

[0031] For example, the laser scanning time can be 100 minutes, 105 minutes, 110 minutes, 115 minutes, 120 minutes, 125 minutes, 130 minutes, 135 minutes, 140 minutes, 145 minutes or 150 minutes, and can also be set according to actual needs. This embodiment of the invention does not make specific limitations.

[0032] Based on all the above embodiments, the implementation process of this solution is described below through the first specific embodiment, including: (1) placing a semiconductor with deposits (mainly deposited oxides and other impurities) on its surface in a vacuum chamber, and placing the surface of the semiconductor at the laser focal plane of the pulsed laser; (2) in a vacuum state, using a wavelength of 532nm, a pulse frequency of 1Hz, a pulse width of 60nm, an average power of less than 800W, and an energy density of 1.5J / cm². 2The pulsed laser is used to perform laser scanning on the surface of the semiconductor for 150 minutes at a laser scanning speed of 25 mm / s. After the laser scanning, the deposits on the semiconductor surface will become tiny dust particles suspended in the vacuum chamber. (3) A vacuum pumping device is used to remove all the dust particles suspended in the vacuum chamber, thereby achieving the purpose of removing the deposits on the semiconductor surface.

[0033] Based on all the above embodiments, the implementation process of this solution is described below through a second specific embodiment, including: (1) placing a semiconductor with deposits (mainly deposited oxides and other impurities) on its surface in a vacuum chamber, and placing the surface of the semiconductor at the laser focal plane of the pulsed laser; (2) in a vacuum state, using a wavelength of 532nm, a pulse frequency of 30Hz, a pulse width of 62nm, an average power of less than 800W, and an energy density of 1.8J / cm². 2 The pulsed laser is used to perform laser scanning on the surface of the semiconductor for 125 minutes at a laser scanning speed of 25 mm / s. After the laser scanning, the deposits on the semiconductor surface will become tiny dust particles suspended in the vacuum chamber. (3) A vacuum pumping device is used to remove all the dust particles suspended in the vacuum chamber, thereby achieving the purpose of removing the deposits on the semiconductor surface.

[0034] Based on all the above embodiments, the implementation process of this solution is described below through a third specific embodiment, including: (1) placing a semiconductor with deposits (mainly deposited oxides and other impurities) on its surface in a vacuum chamber, and placing the surface of the semiconductor at the laser focal plane of the pulsed laser; (2) in a vacuum state, using a wavelength of 532nm, a pulse frequency of 60Hz, a pulse width of 65nm, an average power of less than 800W, and an energy density of 2.0J / cm². 2 The pulsed laser is used to perform laser scanning on the surface of the semiconductor for 100 minutes at a laser scanning speed of 25 mm / s. After the laser scanning, the deposits on the semiconductor surface will become tiny dust particles suspended in the vacuum chamber. (3) A vacuum pumping device is used to remove all the dust particles suspended in the vacuum chamber, thereby achieving the purpose of removing the deposits on the semiconductor surface.

[0035] For example, after repeated experiments, the process parameters shown in Table 1 are the best options for removing nanoparticles of different grades.

[0036] Table 1

[0037]

[0038] In summary, the method for removing deposits from a semiconductor surface provided by this invention involves first placing the semiconductor with deposits on its surface at the focal plane of a pulsed laser within a vacuum chamber; then, using the pulsed laser to scan the surface of the semiconductor, causing the deposits to transform into dust particles; finally, removing the dust particles from the vacuum chamber to remove the deposits from the semiconductor surface. This invention, through laser scanning cleaning of the semiconductor surface, effectively removes deposits without causing secondary pollution to the environment, thus effectively cleaning the semiconductor surface and reducing losses during the production process.

[0039] The above description is only a preferred embodiment of the present invention. It should be noted that for those skilled in the art, several improvements and modifications can be made without departing from the technical principles of the present invention, and these improvements and modifications should also be considered within the scope of protection of the present invention.

Claims

1. A method for removing deposits from a semiconductor surface, characterized in that, include: The laser focal plane of a pulsed laser is placed in a vacuum chamber with semiconductors having deposits on their surface. The surface of the semiconductor is scanned using the pulsed laser, causing the deposits to be converted into dust particles; Remove dust particles from the vacuum chamber to remove the attached material.

2. The method for removing deposits on a semiconductor surface as described in claim 1, characterized in that, The pulsed laser has a wavelength of 532nm, a pulse frequency of 1-60Hz, and a pulse width of 60-65nm.

3. The method for removing deposits on a semiconductor surface as described in claim 1, characterized in that, The pulsed laser has an average power of less than 800W and an energy density of 1.5–2.0 J / cm². 2 .

4. The method for removing deposits on a semiconductor surface as described in claim 1, characterized in that, The laser scanning speed is 25 mm / s.

5. The method for removing deposits on a semiconductor surface as described in claim 1, characterized in that, The laser scanning time is 100-150 minutes.

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