Glass wafer as carrier with high reliability

Abstract

The invention relates to a glass wafer, in particular to a glass wafer that can be used as a carrier wafer, for example in a semiconductor package, in particular as a substrate for a semiconductor device or component. The glass wafer is provided with a first surface, a second surface and an edge which is provided with an edge surface and is connected with the first surface and the second surface, the first surface and the second surface are basically parallel to each other, and the distance between the first surface and the second surface measured orthogonally to the first surface and the second surface is the thickness T of the glass wafer. Wherein the maximum extent of the edge measured parallel to the first and second surfaces and orthogonal to the edge surface is the width W of the edge, where the ratio of the width W to the thickness T is greater than 5% and / or less than 70%, and where less than 100% of the surface area of the edge is a low surface roughness area, wherein the surface roughness Ra of the low surface roughness region of the edge is less than 300 nm and / or greater than 0.1 nm.

Description

Technical Field

[0001] The present invention relates to a glass wafer, and more particularly to a glass wafer that can be used as a carrier wafer, for example, as a substrate for semiconductor devices or components in semiconductor packaging.

[0002] The terms "glass sheet" and "glass wafer" are used interchangeably in this invention. Background Technology

[0003] Glass holds immense potential in consumer electronics, optics, and semiconductor packaging applications due to its high light transmittance and good flatness. In semiconductor packaging applications, glass sheets are used as carriers. Interfacial tension can exist between glass and other materials with different CTEs (coefficients of thermal expansion), such as adhesives, molding materials, and semiconductor chips. Furthermore, in the packaging process, glass bonded together is exposed to thermal cycling and chemical spraying. These are harsh conditions for glass applications. Due to the aforementioned conditions, glass with high edge strength and / or 4-point bending (4PB) strength is desired to avoid or substantially reduce the risk of breakage. Processes such as edge grinding and surface polishing focus on 4PB strength and can result in a limited increase in the strength of the glass. However, wafers with even higher edge strength are particularly desirable in this application.

[0004] Chen et al. (Microelectronic Engineering 87 (2010) 2065-2070) reported the relationship between the edge design of silicon wafers and their ultimate mechanical strength, finding that the overall wafer strength depends largely on the geometry (edge ​​profile and edge length control) and damage incurred during wafer fabrication. Specifically, they found that silicon wafers with a fully circular edge profile (referred to in this invention as "shape B" or "B-shaped" edges) exhibit the highest fracture energy and the lowest wafer breakage rate. However, it remains unclear whether these results can be transferred to glass wafers and how the edge strength of glass wafers can be further improved.

[0005] In semiconductor packaging processes, glass is used as a carrier wafer. In this application, glass is typically bonded to an adhesive layer, and further to a metal redistribution layer, integrated circuit, and epoxy molding, etc. The CTE difference between the glass and other materials can be greater than 2 ppm / K or even greater than 20 ppm / K. This results in high interfacial tension due to the CTE difference and thermal cycling. 4PB and / or edge strength is related to avoiding or substantially reducing the risk of glass breakage in this situation. The 4PB strength of the glass can depend on, for example, the size and number of debris, microcracks, and the like on the end surface. Edge strength can depend on, for example, the edge shape, roughness, and / or defects on the chamfered ramp. Microcracks and debris on the glass can extend and lead to lower glass strength due to exposure to thermal cycling, chemical solution etching, and mechanical treatment during the process. Therefore, the higher the defect ratio, the lower the glass strength. Edge grinding and surface polishing are common methods for reducing debris and microcracks on glass edges and surfaces, and edge polishing and chemical tempering result in higher glass edge strength. On the other hand, chemically tempered surfaces can also help balance warpage issues in the packaging process.

[0006] This invention provides glass wafers with high edge and / or 4PB or 3PB strength for use in semiconductor packaging applications, particularly when the CTE difference compared to the bonding material is greater than 2ppm / K or even greater than 20ppm / K. Processes for obtaining the glass wafers may include dicing, edge grinding, edge polishing, surface polishing, and / or chemical tempering. This significantly reduces debris and microcracks while introducing surface compressive stress. All these factors can be specifically controlled to achieve high glass reliability. Summary of the Invention

[0007] This invention relates to a glass wafer having a first surface, a second surface, and an edge connecting the first and second surfaces. The first and second surfaces are substantially parallel to each other. The distance between the first and second surfaces, measured orthogonally to the first and second surfaces, is the thickness T of the glass wafer. The maximum extension of the edge, measured parallel to the first and second surfaces and orthogonally to the edge surface, is the width W of the edge. The first and second surfaces of the glass wafer can also be referred to as the principal surfaces of the glass wafer. Therefore, the glass wafer has two principal surfaces, namely the first surface and the second surface.

[0008] Each point on the surface of a glass wafer can be assigned to a first surface, a second surface, or an edge. Therefore, the total surface area of ​​the glass wafer can be determined as the sum of the surface areas of the first surface, the second surface, and the edge.

[0009] The width W of the edge is usually measured based on the cross-section of the glass wafer, such as... Figures 1 to 3As shown in the diagram. This width can be defined as the distance between two lines in each cross-section. The first line is the line connecting two points, namely the transition point from the first surface to the edge surface and the transition point from the second surface to the edge surface. These transition points can be easily identified with reasonable accuracy in the cross-section. Each of the first lines is typically orthogonal to both the first and second surfaces. The second line is a tangent to the edge surface and is parallel to the first line. The distance between the first and second lines, measured orthogonally to both the first and second lines, is the edge width W.

[0010] In one aspect of the invention, the ratio of the edge width W to the glass wafer thickness T is greater than 5%, preferably greater than 10%, and / or less than 70%, preferably less than 50%. Such edge geometry is particularly advantageous for achieving high edge strength.

[0011] In one aspect of the invention, the main portion of the surface region of the edge (particularly including the outermost portion of the edge) is a low surface roughness region. Specifically, more than 50%, preferably more than 55%, preferably more than 60%, and / or less than 100%, preferably less than 98%, preferably less than 95% of the surface region of the edge is a low surface roughness region. The portion of the surface region of the edge that is not a low surface roughness region is preferably located in the transition zone from the edge toward the first and / or second surface.

[0012] The surface roughness of the low-roughness region at the edge is preferably less than 300 nm, preferably less than 250 nm, preferably less than 200 nm, preferably less than 150 nm, preferably less than 100 nm, preferably less than 75 nm, preferably less than 50 nm, preferably less than 20 nm, preferably less than 10 nm, and / or greater than 0.1 nm, greater than 0.2 nm, or greater than 0.5 nm. The low-roughness surface region is preferably obtained by polishing and / or by polishing. The low-roughness region may also be referred to as a polished region or a polished area.

[0013] The surface roughness of the non-low surface roughness region is higher than that of the low surface roughness region. Preferably, the difference between the surface roughness of the non-low surface roughness region and the low surface roughness region is in the range of 0.5 nm to 5.0 μm (e.g., 1.0 nm to 2.5 μm, 2.0 nm to 1.5 μm, 5.0 nm to 800 nm, 10 nm to 500 nm, 20 nm to 250 nm, or 50 nm to 100 nm). The difference between the surface roughness of the non-low surface roughness region and the low surface roughness region is preferably at least 0.5 nm, for example at least 1.0 nm, at least 2.0 nm, at least 5.0 nm, at least 10 nm, at least 20 nm, or at least 50 nm. The difference between the surface roughness of the non-low surface roughness region and the surface roughness of the low surface roughness region is preferably at most 5.0 μm, for example at most 2.5 μm, at most 1.5 μm, at most 800 nm, at most 500 nm, at most 250 nm or at most 100 nm.

[0014] Edge polishing may include polishing with, for example, bristle brushes, grinding wheels, and / or diamond grinding wheels.

[0015] Edge polishing can be associated with material removal from the edge. The edge polishing removal thickness is preferably less than 300 μm, preferably less than 150 μm, preferably less than 100 μm, preferably less than 80 μm, and / or greater than 0.3 μm, preferably greater than 1.0 μm, preferably greater than 5 μm, preferably greater than 10 μm.

[0016] In this invention, unless otherwise indicated, the term "surface roughness" refers to the arithmetic mean roughness R. a Average roughness (R) a R is a measure of surface texture. This average roughness is quantified by the perpendicular deviation of the real surface from its ideal form. Typically, the amplitude parameter characterizes the surface based on the perpendicular deviation of the roughness profile from the average line. a R is the arithmetic mean of the absolute values ​​of these vertical deviations. a It can be determined according to DIN EN ISO 4287:2010-07.

[0017] Generally, edge strength is particularly advantageous if the majority of the surface region at the edge is a low-roughness surface region. However, achieving the desired low surface roughness in the surface region near the transition zone from the edge to the first and / or second surfaces without compromising the surface quality of the first and / or second surfaces can be difficult. The inventors have surprisingly discovered that particularly high edge strength can also be achieved if less than 100% of the surface region at the edge is a low-roughness surface region. Therefore, an improved glass wafer is obtained without compromising the surface quality of the first and / or second surfaces, combining the advantages of high surface quality of the first and / or second surfaces with high edge strength achieved by ensuring that the majority of the surface region at the edge (particularly including the outermost portion of the edge) is a low-roughness surface region.

[0018] In one aspect of the invention, the edges may have various different shapes. Figures 1 to 3 Exemplary and non-limiting edge shapes are shown in the figure.

[0019] In one aspect of the invention, the edge may have, as Figure 1 The shape shown or a similar shape. Note Figure 1 The shapes depicted are not drawn to scale. Rather, they are schematic illustrations of one of the representative shapes for the present invention. Figure 1 The shape shown may be referred to, for example, as "shape A" or "A-shape". This shape is characterized by having three distinguishable surfaces at the edge (i.e., a surface substantially perpendicular to the first and second surfaces, and two connecting surfaces that connect the perpendicular surfaces to either the first or second surface). The connecting surface connecting the first surface of the glass wafer to the perpendicular surface of the edge may be referred to as the primary connecting surface. Similarly, the connecting surface connecting the second surface of the glass wafer to the perpendicular surface of the edge may be referred to as the secondary connecting surface. The primary connecting surface may, for example, form an angle of 30° to 60°, preferably 40° to 50°, and preferably approximately 45° with the first surface and the perpendicular surface of the edge. Similarly, the secondary connecting surface may, for example, form an angle of 30° to 60°, preferably 40° to 50°, and preferably approximately 45° with the second surface and the perpendicular surface of the edge. The primary and secondary connecting surfaces may, for example, be oriented such that the orientation of the primary connecting surface deviates from the orientation of the secondary connecting surface by 75° to 105°, preferably 85° to 95°, and preferably approximately 90°.

[0020] In one aspect of the invention, the edge may have, as Figure 2 The shape shown or a similar shape. Note Figure 2 The shapes depicted are not drawn to scale. Rather, they are schematic illustrations of one of the representative shapes for the present invention. Figure 2The shape shown in [ID] can be referred to, for example, as "Shape B" or "B-shaped". This shape is characterized by edges that are circular, particularly in the form of an approximate semi-ellipse that has a radius R equal to half the thickness T of the glass wafer and equal to the edge width W. s . In other words, approximately R s = W = T / 2. Generally, this shape is characterized by edges that are circular, particularly in the form of an approximate semi-ellipse that has a first semi-axis of length A1 equal to half the thickness T of the glass wafer and a second semi-axis of length A2 equal to the edge width W. In the case where W = T / 2, A1 = A2 = R s = W = T / 2. Preferably, the ratio A2 / A1 is in the range of 0.90 to 1.10, preferably 0.95 to 1.05, preferably 0.98 to 1.02, preferably 0.99 to 1.01, preferably approximately 1.00. The ratio A2 / A1 is preferably at least 0.90, preferably at least 0.95, preferably at least 0.98, preferably at least 0.99, preferably at least 1.00. The ratio A2 / A1 is preferably at most 1.10, preferably at most 1.05, preferably at most 1.02, preferably at most 1.01, preferably at most 1.00.

[0021] In some embodiments, the edge width W can be greater than T / 2, such that A2 > A1. Thus, the ratio A2 / A1 can be greater than 1.00, for example at least 1.01, at least 1.02 or at least 1.05. Preferably, the ratio A2 / A1 is less than 1.25, preferably at most 1.20, at most 1.15 or at most 1.10. The ratio A2 / A1 can be, for example, in the range of >1.00 to <1.25, 1.01 to​​​​​​​​​​​​ Figure 1 and Figure 2 a mixture of the two extreme cases shown in. This shape is characterized by having three distinguishable surfaces at the edge (i.e., one surface substantially perpendicular to the first and second surfaces and two connecting surfaces connecting the vertical surface to the first surface or the second surface respectively). However, compared with Figure 1 the A shape shown in, the main connecting surface and the secondary connecting surface are not formed as straight regions that appear as lines in the cross-section, but are formed as circular shapes, particularly in the form of an approximately quarter ellipse, which has a first semi-axis perpendicular to the first and second surfaces of the glass wafer and a second semi-axis parallel to the first and second surfaces of the glass wafer, where Q1 is the length of the first semi-axis and Q2 is the length of the second semi-axis. The length Q2 of the second semi-axis is equal to the width W of the edge.

[0024] Preferably, the ratio Q2 / Q1 is in the range of 0.90 to 1.10, preferably 0.95 to 1.05, preferably 0.98 to 1.02, preferably 0.99 to 1.01, preferably approximately 1.00. The ratio Q2 / Q1 is preferably at least 0.90, preferably at least 0.95, preferably at least 0.98, preferably at least 0.99, preferably at least 1.00. The ratio Q2 / Q1 is preferably at most 1.10, preferably at most 1.05, preferably at most 1.02, preferably at most 1.01, preferably at most 1.00.

[0025] In certain embodiments, Q2 > Q1. Thus, Q2 / Q1 can be greater than 1.00, such as at least 1.01, at least 1.02 or at least 1.05. Preferably, the ratio Q2 / Q1 is less than 1.25, preferably at most 1.20, at most 1.15 or at most 1.10. The ratio Q2 / Q1 can be, for example, in the range of >1.00 to <1.25, 1.01 to 1.20, 1.02 to 1.15 or 1.05 to 1.10.

[0026] In certain embodiments, Q2 < Q1. Thus, the ratio Q2 / Q1 can be less than 1.00, such as at most 0.99, at most 0.98 or at most 0.95. Preferably, the ratio Q2 / Q1 is greater than 0.75, preferably at least 0.80, at least 0.85 or at least 0.90. The ratio Q2 / Q1 can be, for example, in the range of >0.75 to <1.00, 0.80 to 0.99, 0.85 to 0.98 or 0.90 to 0.95.

[0027] Preferably, the main connecting surface and the secondary connecting surface are formed such that the two surfaces appear as an approximately quarter circle in the cross-section of the glass wafer, particularly as shown in Figure 3 and Figure 4 shown in. A quarter circle is a special case of a quarter ellipse with Q1 = Q2.

[0028] Figure 4 This is an enlarged view of a corner of a glass wafer showing the first surface, the vertical surface, and the main connecting surface. The main connecting surface is formed as a quarter circle. Note the radius R of the quarter circle. q The width W corresponds to the edge. Q1 = Q2 = R q =W. Preferably, the radius R q The ratio of the edge to the thickness T is greater than 5%, preferably greater than 10%, preferably greater than 15%, preferably greater than 20%, and / or less than 50%, preferably less than 45%, preferably less than 40%, preferably less than 35%. This type of edge geometry is particularly advantageous for achieving high edge strength. Preferably, the radius R... q At least 0.01 mm, preferably at least 0.02 mm, preferably at least 0.05 mm, preferably at least 0.1 mm, and / or at most 1.5 mm, preferably at most 1.2 mm, preferably at most 1.0 mm, preferably at most 0.7 mm, preferably at most 0.5 mm, preferably at most 0.3 mm.

[0029] Preferably, the edges are A-shaped, B-shaped, or M-shaped. These shapes are particularly advantageous for achieving high edge strength.

[0030] The edge shape is preferably symmetrical, such as... Figures 1 to 3 As shown. Specifically, the shape preferably such that the distance from the outermost point of the edge to the first surface is substantially the same as the distance from the outermost point of the edge to the second surface. Preferably, the ratio of the distance from the outermost point of the edge to the first surface to the distance from the outermost point of the edge to the second surface is at least 0.8, preferably at least 0.9, preferably at least 0.95, preferably at least 0.98, preferably at least 0.99, and / or at most 1.2, preferably at most 1.1, preferably at most 1.05, preferably at most 1.02, preferably at most 1.01. Preferably, the ratio of the distance from the outermost point of the edge to the first surface to the distance from the outermost point of the edge to the second surface is approximately 1:1. Symmetrical edge shapes are particularly advantageous for high edge strength.

[0031] However, in some embodiments, the edge shape may be asymmetrical. In such embodiments, the ratio of the distance from the outermost point of the edge to the first surface to the distance from the outermost point of the edge to the second surface is, for example, between 0.5 and 2.0.

[0032] The glass wafer of the present invention is not limited to a specific shape. When the shape of a glass wafer is mentioned in the present invention, unless otherwise indicated, it refers to the shape of the first and / or second surfaces. Preferably, the first and second surfaces of the glass wafer have substantially the same shape and / or size. Unless otherwise indicated, the term "size" refers to the surface area of ​​the first and / or second surfaces. The glass wafer can generally have any shape. The glass wafer may, for example, have a rectangular shape or may be circular. "Circular" may also be referred to as "annular." A rectangular shape includes a square glass wafer. The terms "shape of the glass wafer" and "shape of the first and second surfaces" refer to the same characteristics of the glass object. For example, if the first and second surfaces are circular, the glass wafer is circular. Similarly, if the first and second surfaces have a rectangular shape, the glass wafer has a rectangular shape.

[0033] The surface areas of the first and second surfaces of the glass wafer can each be, for example, at least 1 cm². 2 and / or up to 3000cm 2 .

[0034] The thickness T of the glass wafer may be, for example, at least 0.05 mm, for example at least 0.1 mm and / or at most 5.0 mm, for example at most 3.0 mm, at most 2.0 mm, at most 1.1 mm, at most 0.7 mm, at most 0.6 mm, at most 0.5 mm, at most 0.4 mm or at most 0.3 mm.

[0035] In one aspect of the invention, the glass wafer is chemically tempered or has undergone chemical tempering. Therefore, the glass wafer is ion-exchange treated or has undergone ion exchange treatment.

[0036] Compressive stress (CS) (also known as "compressive stress" or "surface stress") is the stress generated by the displacement effect on the glass network through the glass surface after ion exchange, without deformation occurring in the glass.

[0037] "Penetration depth" or "depth of ion exchange layer" ("layer depth" or "depth of ion exchange layer", DoL) is the thickness of the glass surface layer where ion exchange occurs and compressive stress is generated. The compressive stress CS and penetration depth DoL can be optically measured (specifically via a waveguide mechanism) using a commercially available stress gauge FSM 6000 (e.g., Luceo Co., Ltd., Tokyo, Japan).

[0038] When a stress CS is induced on one or both sides of a single glass sheet, tensile stress must be induced in the central region of the glass to balance the stress according to Newton's third principle; this tensile stress is called the central tensile force (CT). CT can be calculated from the measured CS and DoL values.

[0039] Ion exchange refers to the hardening or chemical tempering (also known as chemical tempering) of glass through an ion exchange process, a process well-known to those skilled in the art in the field of glass manufacturing and processing. Tempering is accomplished by immersing a glass wafer in a salt bath containing monovalent ions to exchange with the alkali ions within the glass. The monovalent ions in the salt bath have a larger radius than the alkali ions within the glass. After ion exchange, compressive stress is established in the glass due to the larger ions being compressed into the glass network. After ion exchange, the strength and flexibility of the glass are significantly improved. Furthermore, the CS (compressive stress) caused by chemical tempering improves the bending properties of the tempered glass wafer and increases its scratch resistance. Typical salts used for chemical tempering include those containing potassium (K). + Molten salt or salt mixture. Salt baths containing Na are selected for chemical tempering. + and / or containing K + A molten salt bath or a mixture thereof. Salts selected include NaNO3, KNO3, NaCl, KCl, Na2SO4, K2SO4, Na2CO3, K2CO3, and K2Si2O5. Additives such as NaOH, KOH, and other sodium or potassium salts are also used to better control the ion exchange rate for chemical tempering. Ion exchange can be completed, for example, in KNO3 at temperatures ranging from 300°C to 480°C, particularly 340°C to 450°C or 390°C to 450°C, over a time span of, for example, 30 seconds to 48 hours, particularly about 20 minutes. Chemical tempering is not limited to a single step. It can include multiple steps in one or more salt baths with various concentrations of alkali metal ions to achieve better tempering performance. Therefore, chemically tempered glass wafers can be tempered in one step or in a process of multiple steps (e.g., two steps). Two-step chemical tempering is particularly applicable to glasses containing Li2O, because lithium ions can be exchanged for sodium and potassium ions.

[0040] In one aspect of the invention, the glass wafer is chemically tempered. The glass wafer, for example, has a surface compressive stress CS of at least 150 MPa, preferably greater than 200 MPa, preferably at least 300 MPa, preferably greater than 400 MPa, preferably greater than 500 MPa and / or at most 900 MPa, preferably at most 700 MPa at the first and / or second surface. The depth DoL of the compressive stress layer at the first and / or second surface is preferably greater than 1 μm, preferably at least 2 μm, preferably greater than 3 μm, preferably at least 5 μm, preferably greater than 10 μm, preferably greater than 20 μm, for example greater than 50 μm and / or at most 50 μm, preferably at most 20 μm.

[0041] The glass objects of the present invention are not limited to specific glass compositions. However, certain glass compositions are particularly advantageous. In one embodiment, the glass may be a silicate glass, such as silicate glass, aluminosilicate glass, lithium aluminosilicate glass, or borosilicate glass. The glass may also be soda-lime glass. The glass may contain alkali metal oxides (such as Na₂O), particularly in sufficient amounts to allow for chemical tempering.

[0042] The glass may comprise the following components in wt%: SiO2 45.0 to 75.0 wt%, B2O 0 to 5.0 wt%, Al2O3 2.5 to 25.0 wt%, Li2O 0 to 10.0 wt%, Na2O 5.0 to 20.0 wt%, K2O 0 to 10.0 wt%, MgO 0 to 15.0 wt%, CaO 0 to 10.0 wt%, BaO 0 to 5.0 wt%, ZnO 0 to 5.0 wt%, TiO2 0 to 2.5 wt%, ZrO2 0 to 5.0 wt%, and P2O5 0 to 20.0 wt%. In a preferred embodiment, the glass is composed of the components mentioned in the foregoing list, wherein the range of these components is at least 95.0 wt%, preferably at least 97.0 wt%, and most preferably at least 99.0 wt%.

[0043] As used herein, the terms "free of X" and "free of component X" preferably refer to glass that substantially does not contain component X, i.e., such component may exist in the glass at most as an impurity or contaminant, but it is not added to the glass composition as an individual component. This means that component X is not added in a basic amount. The non-basic amount according to the invention is less than 100 ppm (m / m), preferably less than 50 ppm, and preferably less than 10 ppm. Herein, "X" can refer to any component, such as lead ions or arsenic ions. Preferably, the glass described herein substantially does not contain any components not mentioned in this invention.

[0044] In one embodiment, the glass may comprise the following components in wt%: SiO2 45.0 to 72.0 wt%, B2O3 0 to 4.7 wt%, Al2O3 4.0 to 24.0 wt%, Li2O 0 to 6.0 wt%, Na2O 8.0 to 18.0 wt%, K2O 0 to 8.0 wt%, MgO 0 to 10.0 wt%, CaO 0 to 3.0 wt%, BaO 0 to 2.0 wt%, ZnO 0 to 3.0 wt%, TiO2 0 to 1.0 wt%, ZrO2 0 to 4.6 wt%, and P2O5 0 to 15.0 wt%.

[0045] In one embodiment, the glass may include the following components in wt%: SiO2 51.0 to 65.0 wt%, B2O3 0 to 4.7 wt%, Al2O3 11.0 to 24.0 wt%, Li2O 0 to 6.0 wt%, Na2O 8.0 to 18.0 wt%, K2O 0 to 8.0 wt%, MgO 0 to 5.5 wt%, CaO 0 to 1.0 wt%, BaO 0 to 1.0 wt%, ZnO 0 to 3.0 wt%, TiO2 0 to 1.0 wt%, ZrO2 0 to 4.6 wt%, and P2O5 0 to 10.0 wt%.

[0046] In one embodiment, the glass may include the following components in wt%: SiO2 45.0 to 72.0 wt%, B2O3 0 to 4.7 wt%, Al2O3 4.0 to 24.0 wt%, Li2O 0 to 3.0 wt%, Na2O 8.0 to 18.0 wt%, K2O 0 to 8.0 wt%, MgO 0 to 5.5 wt%, CaO 0 to 1.0 wt%, BaO 0 to 2.0 wt%, ZnO 0 to 3.0 wt%, TiO2 0 to 1.0 wt%, ZrO2 0 to 3.0 wt%, and P2O5 0 to 15.0 wt%.

[0047] The lower limit of the amount of SiO2 may be, for example, at least 45 wt%, at least 51 wt%, or at least 55 wt%. The upper limit of the amount of SiO2 may be, for example, at most 75 wt%, at most 72 wt%, or at most 65 wt%.

[0048] The lower limit of the amount of B2O3 may be, for example, at least 0.1 wt%, at least 0.2 wt%, or at least 0.5 wt%. The upper limit of the amount of B2O3 may be, for example, at most 5 wt%, at most 2 wt%, or at most 1 wt%. For example, the glass may be free of B2O3.

[0049] The lower limit of the amount of Al2O3 may be, for example, at least 2.5 wt%, at least 4 wt%, or at least 11 wt%. The upper limit of the amount of Al2O3 may be, for example, at most 25 wt%, at most 24 wt%, or at most 20 wt%.

[0050] The lower limit of the amount of Li2O may be, for example, at least 0.1 wt%, at least 0.2 wt%, or at least 0.5 wt%. The upper limit of the amount of Li2O may be, for example, at most 10 wt%, at most 6 wt%, or at most 3 wt%. The glass may, for example, be free of Li2O.

[0051] The lower limit of the amount of Na2O may be, for example, at least 5 wt%, at least 8 wt%, or at least 10 wt%. The upper limit of the amount of Na2O may be, for example, at most 20 wt%, at most 18 wt%, or at most 16 wt%.

[0052] The lower limit of the amount of K2O may be, for example, at least 0.5 wt%, at least 1 wt%, or at least 2 wt% for certain variants. The upper limit of the amount of K2O may be, for example, at most 10 wt%, at most 8 wt%, at most 5 wt%, at most 3 wt%, or at most 2 wt% or at most 1.5 wt% for certain variants. The glass may, for example, be K2O-free.

[0053] The lower limit of the amount of MgO may be, for example, at least 0.5 wt%, at least 1 wt%, or at least 2 wt%. The upper limit of the amount of MgO may be, for example, at most 15 wt%, at most 10 wt%, or at most 5.5 wt%. The glass may, for example, be free of MgO.

[0054] The lower limit of the amount of CaO may be, for example, at least 0.1 wt%, at least 0.2 wt%, or at least 0.5 wt%. The upper limit of the amount of CaO may be, for example, at most 10 wt%, at most 3 wt%, or at most 1 wt%. The glass may, for example, be free of CaO.

[0055] The lower limit of the amount of P2O5 may be, for example, at least 0.1 wt%, at least 0.2 wt%, or at least 0.5 wt%. The upper limit of the amount of P2O5 may be, for example, at most 20 wt%, at most 15 wt%, or at most 10 wt%. The glass may, for example, be free of P2O5.

[0056] The lower limit of the amount of BaO may be, for example, at least 0.1 wt%, at least 0.2 wt%, or at least 0.5 wt%. The upper limit of the amount of BaO may be, for example, at most 5 wt%, at most 2 wt%, or at most 1 wt%. The glass may be free of BaO.

[0057] The lower limit of the amount of ZnO may be, for example, at least 0.1 wt%, at least 0.2 wt%, or at least 0.5 wt%. The upper limit of the amount of ZnO may be, for example, at most 5 wt%, at most 3 wt%, or at most 1 wt%. The glass may be free of ZnO.

[0058] The lower limit of the amount of ZrO2 may be, for example, at least 0.2 wt%, at least 0.5 wt%, or at least 1 wt%. The upper limit of the amount of ZrO2 may be, for example, at most 5 wt%, at most 4.6 wt%, or at most 3 wt%. The glass may, for example, be free of ZrO2.

[0059] The lower limit of the amount of TiO2 may be, for example, at least 0.1 wt%, at least 0.2 wt%, or at least 0.5 wt%. The upper limit of the amount of TiO2 may be, for example, at most 2.5 wt%, at most 1.5 wt%, or at most 1 wt%. The glass may, for example, be free of TiO2.

[0060] Preferably, the glass comprises the following components in the indicated amounts (in wt%):

[0061] In one embodiment, the glass comprises the following components in wt% as indicated amounts: SiO2 70.0 to 85.0 wt%, B2O3 5.0 to 15.0 wt%, Al2O3 1.0 to 10.0 wt%, Li2O 0 to 3.0 wt%, Na2O 1.0 to 10.0 wt%, K2O 0 to 5.0 wt%, MgO 0 to 5.0 wt%, CaO 0 to 5.0 wt%, BaO 0 to 2.0 wt%, ZnO 0 to 3.0 wt%, TiO2 0 to 1.0 wt%, ZrO2 0 to 1.0 wt%, and P2O5 0 to 15.0 wt%.

[0062] In one embodiment, the glass comprises the following components in wt% as indicated amounts: SiO2 60.0 to 80.0 wt%, B2O3 0 to 5.0 wt%, Al2O3 0.0 to 2.0 wt%, Li2O 0 to 3.0 wt%, Na2O 5.0 to 15.0 wt%, K2O 5.0 to 15.0 wt%, MgO 0 to 5.0 wt%, CaO 1.0 to 10.0 wt%, BaO 0 to 5.0 wt%, ZnO 1.0 to 10.0 wt%, TiO2 0 to 1.0 wt%, ZrO2 0 to 1.0 wt%, and P2O5 0 to 15.0 wt%.

[0063] In one embodiment, the glass comprises the following components in indicated amounts by weight: SiO2 45.0 to 70.0 wt%, B2O3 5.0 to 15.0 wt%, Al2O3 2.0 to 15.0 wt%, Li2O 0 to 3.0 wt%, Na2O 1.0 to 10.0 wt%, K2O 5.0 to 15.0 wt%, MgO 0 to 5.0 wt%, CaO 0 to 5.0 wt%, BaO 0 to 2.0 wt%, ZnO 1.0 to 12.0 wt%, TiO2 1.0 to 10.0 wt%, ZrO2 0 to 2.0 wt%, and P2O 50 to 15.0 wt%.

[0064] In one embodiment, the glass comprises the following components in wt% as indicated: SiO2 45.0 to 70.0 wt%, B2O3 5.0 to 15.0 wt%, Al2O3 5.0 to 25.0 wt%, Li2O 0 to 3.0 wt%, Na2O 0 to 3.0 wt%, K2O 0 to 3.0 wt%, MgO 0.5 to 10.0 wt%, CaO 1.0 to 10.0 wt%, BaO 0 to 10.0 wt%, SrO 0 to 10.0 wt%, ZnO 0 to 3.0 wt%, TiO2 0 to 1.0 wt%, ZrO2 0 to 1.0 wt%, and P2O5 0 to 15.0 wt%.

[0065] In one aspect of the invention, the glass wafer preferably has a curvature (absolute value) of less than 250 μm, preferably less than 200 μm, preferably less than 150 μm, and / or greater than 5 μm, greater than 10 μm, greater than 20 μm, or greater than 30 μm. The curvature is preferably determined according to ASTM F 534–02.

[0066] In one aspect of the invention, the glass wafer preferably has a warpage of less than 250 μm, preferably less than 200 μm, preferably less than 150 μm, and / or greater than 5 μm, greater than 10 μm, greater than 20 μm, or greater than 30 μm. The warpage is preferably determined according to ASTM F 657-92 (re-approved in 1999).

[0067] In one aspect of the invention, the surface roughness of the first and / or second surfaces is preferably less than 500 nm, preferably less than 400 nm, preferably less than 300 nm, preferably less than 200 nm, preferably less than 100 nm, preferably less than 50 nm, preferably less than 20 nm, preferably less than 10 nm, and / or greater than 0.1 nm, greater than 0.2 nm, or greater than 0.5 nm.

[0068] In one aspect of the invention, the glass wafer has a total thickness variation (TTV) of less than 20 μm, preferably less than 15 μm, preferably less than 10 μm, preferably less than 5 μm, preferably less than 3 μm, preferably less than 1 μm, preferably less than 0.5 μm, and / or greater than 1 μm or greater than 2 μm. TTV is the difference between the maximum thickness and the minimum thickness of the glass wafer.

[0069] In one aspect of the invention, the glass wafer has a 4PB strength greater than 100 MPa, preferably greater than 150 MPa, preferably greater than 200 MPa, and / or less than 900 MPa. Specifically, the 4PB strength is determined by using a 4PB point bending method. Preferably, a glass wafer with a rectangular shape, such as 100 mm * 60 mm, particularly 100 mm * 60 mm * 1.1 mm, is used. The glass wafer to be tested is placed on two support pins spaced 80 mm apart. Then, two loading pins spaced 40 mm apart are applied to the sides of the glass wafer opposite to the support pins at a speed of 10 mm / min until the glass breaks. The force at which the glass breaks is recorded and can be converted into strength. The loading pins are positioned symmetrically between the support pins, such that the following configuration exists: support pin—20 mm—loading pin—40 mm—loading pin—20 mm—support pin. Therefore, the horizontal distance between the loading pins is 40 mm and the horizontal distance between the support pins is 20 mm + 40 mm + 20 mm = 80 mm. The horizontal distance between loading pins is also called the loading span. The horizontal distance between support pins is also called the support span.

[0070] The relative 4PB strength is the 4PB strength divided by the square of the sample width and the sample thickness. The relative 4PB strength is preferably greater than 1.4 MPa / mm. 3 Preferably greater than 2.1 MPa / mm 3 Preferably greater than 2.8 MPa / mm 3 and / or less than 12.5 MPa / mm 3 .

[0071] In one aspect of the invention, the glass wafer has a static edge compressive strength of greater than 50N, preferably greater than 100N, preferably greater than 200N, preferably greater than 300N, and / or less than 800N.

[0072] In one aspect of the invention, the glass wafer has a drop ball breakage height greater than 70 mm, preferably greater than 75 mm, preferably greater than 80 mm, preferably greater than 90 mm, preferably greater than 100 mm, preferably greater than 110 mm, preferably greater than 120 mm, preferably greater than 150 mm, preferably greater than 200 mm, preferably greater than 300 mm, preferably greater than 400 mm, preferably greater than 500 mm, and preferably greater than 750 mm. The drop ball breakage height can be, for example, less than 7500 mm, less than 2500 mm, less than 1500 mm, less than 750 mm, less than 500 mm, less than 400 mm, less than 300 mm, less than 200 mm, less than 175 mm, less than 150 mm, less than 140 mm, or less than 130 mm. Preferably, the drop ball breakage height is determined based on a sample of 100*60*1.1 mm in size, placed vertically on a marble slab. The drop ball breakage height at which the glass wafer malfunctions is recorded as the drop ball breakage height. Preferably, a steel ball with a mass of 0.13 kg is used to determine the breaking height of the falling ball.

[0073] In one aspect of the invention, the glass wafer has a falling ball impact resistance greater than 0.1 J, preferably greater than 0.11 J, preferably greater than 0.12 J, preferably greater than 0.13 J, preferably greater than 0.14 J, preferably greater than 0.15 J, preferably greater than 0.16 J, preferably greater than 0.2 J, preferably greater than 0.25 J, preferably greater than 0.3 J, preferably greater than 0.5 J, and preferably greater than 1.0 J. The falling ball impact resistance can, for example, be less than 10 J, less than 5.0 J, less than 2.0 J, less than 1.5 J, less than 1.0 J, less than 0.5 J, less than 0.3 J, less than 0.25 J, less than 0.2 J, less than 0.19 J, less than 0.18 J, or less than 0.17 J. Preferably, the falling ball impact resistance is determined based on a sample with a size of 100*60*1.1 mm. The falling ball impact resistance can be determined based on the falling ball breakage height using the following formula: Impact resistance of falling ball [unit: J] = Height of ball breaking off [in meters] · Mass of ball [in kilograms] · Force [in m / s²] 2 ]

[0074] In one aspect of the invention, particularly at a reference thickness of 100 μm, the glass has a total transmittance of at least 40%, preferably at least 50%, and / or at most 75%, preferably at most 65%, at a wavelength of 250 nm.

[0075] In one aspect of the invention, particularly at a reference thickness of 100 μm, the glass has a total transmittance of at least 40%, preferably at least 50%, and / or at most 75%, preferably at most 65%, at a wavelength of 350 nm.

[0076] In one aspect of the invention, the glass has an average coefficient of linear thermal expansion (CTE) of up to 10.0 ppm / K, up to 9.0 ppm / K, up to 8.0 ppm / K, up to 7.0 ppm / K, up to 6.0 ppm / K, preferably up to 5.0 ppm / K, preferably up to 4.5 ppm / K, and / or at least 2.5 ppm / K, at least 3.0 ppm / K, or at least 3.5 ppm / K in the range of 20°C to 300°C. For certain applications, it may be advantageous if the CTE of the glass wafer is suitable for the CTE of other materials or combinations of different materials in one or different layers. (玻璃) With CTE (其他材料) The difference is preferably up to 2.0 ppm / K, preferably up to 1.5 ppm / K, preferably up to 1.0 ppm / K, and / or at least 0.2 ppm / K or at least 0.5 ppm / K. Attached Figure Description

[0077] Figure 1 A cross-section of the glass wafer 10 of the present invention, having a first surface 11 and a second surface 12, is schematically shown. The thickness T of the glass wafer 10 is the distance 13 between the first surface 11 and the second surface 12. The glass wafer 10 has an edge including a vertical surface 16 perpendicular to the first surface 11 and the second surface 12. The edge further includes a primary connecting surface 17 connecting the first surface 11 and the vertical surface 16 and a secondary connecting surface 18 connecting the second surface 12 and the vertical surface 16. The vertical surface 16 has a height 15. The width W of the edge is indicated by a double arrow 14. Connecting surfaces 17 and 18 form approximately 45° angles with the first surface 11 and the second surface 12, respectively, and with the vertical surface 16 of the edge. The primary connecting surface 17 and the secondary connecting surface 18 are oriented such that the orientation of the primary connecting surface 17 deviates from the orientation of the secondary connecting surface 18 by approximately 90°.

[0078] Figure 2 A cross-section of the glass wafer 20 of the present invention, having a first surface 21 and a second surface 22, is schematically shown. The thickness T of the glass wafer 20 is the distance 23 between the first surface 21 and the second surface 22. The glass wafer 20 has an edge with a width W indicated by a double arrow 24. The edge is in the form of a semicircle with a radius R equal to half the thickness T of the glass wafer and equal to the width W of the edge. s In other words, R s =W=T / 2.

[0079] Figure 3A cross-section of the glass wafer 30 of the present invention, having a first surface 31 and a second surface 32, is schematically shown. The thickness T of the glass wafer 30 is the distance 33 between the first surface 31 and the second surface 32. The glass wafer 30 has an edge including a vertical surface 36 perpendicular to the first surface 31 and the second surface 32. The edge further includes a primary connecting surface 37 connecting the first surface 31 and the vertical surface 36 and a secondary connecting surface 38 connecting the second surface 32 and the vertical surface 36. The vertical surface 36 has a height 35. The width W of the edge is indicated by a double arrow 34. The primary connecting surface 37 and the secondary connecting surface 38 are formed such that the two surfaces appear as quarter circles in the cross-section of the glass wafer 30.

[0080] Figure 4 schematically shown Figure 3 The image shows an enlarged view of a corner of the glass wafer 30. The first surface 31 and the vertical surface 36 are connected by a main connecting surface 37. The main connecting surface 37 is formed as a quarter circle. Note that the radius 39 of this quarter circle is equal to the width 34 of its edge.

[0081] Figure 5 The experimental setup for a static edge pressure test is schematically illustrated. To test edge strength resistance under static edge pressure, a glass wafer 50 is positioned at an angle between two blocks 51 and 52 located on a steel plate 53. A steel blade 54 applies force to the edge of the glass wafer 50 in the direction indicated by arrow 55. The force at which the glass wafer 50 fails is recorded as the edge strength resistance under static edge pressure. The failure is specifically a glass crack or breakage. When a failure occurs, the force decreases sharply, and the test is then stopped, with the peak force recorded as the edge strength resistance under static edge pressure.

[0082] Figure 6 The results of the static edge stress test are presented as box plots. Edge stress is shown in units of N on the y-axis. Boxes are plotted from the first quartile to the third quartile. The horizontal line within the box indicates the median. The upward-extending line shows the distribution from the third quartile to the maximum value. The downward-extending line shows the distribution from the minimum value to the first quartile. Four different types of glass wafer edges have been tested. Each box plot represents the results obtained for one of the four types.

[0083] Figure 7The experimental setup for testing the drop ball fracture height and drop ball impact resistance is schematically illustrated. To test these parameters, a glass wafer 70 is positioned vertically between two blocks 71 and 72 on a marble slab 73. A steel ball 74, weighing 130g, is dropped onto the edge of the glass wafer 70. Arrow 75 indicates the direction in which the steel ball 74 falls onto the glass wafer 70. Two dashed lines indicate the lower end of the steel ball 74 and the upper end of the glass wafer 70, respectively. The distance between the lower end of the steel ball 74 and the upper end of the glass wafer 70 is the drop height, as indicated by the double arrow 76. The drop height 76 at which the glass wafer 70 fails is recorded as the drop ball fracture height. Failures include, in particular, fragmentation, cracking, and glass breakage. The drop ball impact resistance (in J) can be calculated as the drop ball fracture height (in m), the mass of the ball (in kg), and g-force (in m / s²). 2 The product of ).

[0084] Figure 8 The results of the drop ball breakage height test are presented as box plots. The breakage height (i.e., the drop ball height at which the glass wafer fails) is shown in mm on the y-axis. Boxes are plotted from the first quartile to the third quartile. The horizontal line within the box indicates the median. The upward-extending line shows the distribution from the third quartile to the maximum value. The downward-extending line shows the distribution from the minimum value to the first quartile. Four different edge types of glass wafers were tested. Each box plot represents the results obtained for one of the four types. For the unpolished B-type sample, the median is equal to the third quartile.

[0085] Figure 9 The results of the 4PB test are presented as a bar chart. The fracture load (i.e., the force that records the glass fracture) is shown on the y-axis. The mean fracture load ± standard deviation is shown for the glass wafer of the indicated type. Detailed Implementation

[0086] The glass wafer of this invention has been tested for its static edge compressive strength, its drop ball impact resistance, and its 4PB strength.

[0087] Four different types of glass wafers have been tested. All four types of glass wafers differ only in their edges. Otherwise, the different types of glass wafers are identical.

[0088] All four types of glass wafers have the same glass composition of alkali borosilicate glass. All four types of glass wafers have a thickness T of 1.1 mm. All four types of glass wafers have a rectangular shape with a length of 100 mm and a width of 60 mm. In other words, each of the first and second surfaces has a surface area of ​​100 mm × 60 mm.

[0089] The differences between different types of glass wafers relative to their edges are as follows.

[0090] The edges of the first type of glass wafer are A-shaped. Figure 1 An A-shaped edge is schematically shown. In the A-shaped edge of the first type of glass wafer, the connecting surfaces form an angle of approximately 45° with the first surface and the second surface, respectively, and with the perpendicular surface 16 of the edge. The primary and secondary connecting surfaces are oriented such that the orientation of the primary connecting surface deviates from the orientation of the secondary connecting surface by approximately 90°. The height of the perpendicular surface is 0.4 ± 0.1 mm. The edge of the first type of glass wafer is unpolished.

[0091] The edge of the second type of glass wafer is B-shaped. Figure 2 The diagram schematically illustrates a B-shaped edge. The edge shape of the second type of glass wafer is a semi-circular circle with a radius R equal to half the thickness T of the glass wafer and equal to the width W of the edge. s In other words, R s =W=T / 2=0.55±0.1mm. The edges of the second type of glass wafer are unpolished.

[0092] The edge of the third type of glass wafer is B-shaped, as described for the second type of glass wafer. s =W = T / 2 = 0.55 ± 0.1 mm. However, compared to the second type of glass wafer, the edges of the third type of glass wafer are polished.

[0093] The edge of the fourth type of glass wafer is M-shaped (also known as a hybrid shape). Figure 3 and Figure 4 The diagram schematically illustrates an M-shaped edge. The M-shaped edge of the fourth type of glass wafer includes a primary connecting surface connecting the first surface to the vertical surface and a secondary connecting surface connecting the second surface to the vertical surface. The primary and secondary connecting surfaces are formed such that they appear as a quarter circle in the cross-section of the glass wafer. The edges of the fourth type of glass wafer are polished. 1. Static edge compressive strength

[0094] Utilize Figure 5 The experimental setup shown tests edge strength under static edge pressure (static edge compressive strength).

[0095] A glass wafer with different modified edges, measuring 100*60*1.1mm, is placed at approximately a 30° angle on a sample holder 53. The sample holder 53 is made of steel. The support height of block 51 is 30mm. During testing, a 2mm gap is maintained between the top edge of the glass wafer 50 on block 51 and the support point of the glass wafer 50 for pressure application. A steel blade 54 is a wedge made of steel. The wedge 54 is then loaded at a speed of 10mm / min until the glass breaks. The steel blade 54 is wedge-shaped and has a tip with a width of 0.7mm for contacting the edge of the glass wafer 50. The steel blade 54 has a 5° tilt angle and is applied to the glass wafer 50 such that the longer end of the steel blade 54 is positioned towards block 51 and the shorter end of the steel blade 54 is positioned towards block 52, such that... Figure 5 When force 55 is applied in the direction shown, a force component is generated that pushes the glass wafer 50 toward the block 52. The purpose of using a blade with a 5° tilt angle is to generate a force perpendicular to the surface of the glass edge.

[0096] Twenty samples were studied from each of the first, second, third, and fourth types of glass wafers. The measurements are shown in the table below: Type 1 Type II Type 3 Type 4 105 118 266 167 93 133 144 111 104 137 124 186 96 135 142 170 111 132 119 168 118 124 122 272 131 119 138 300 142 114 174 145 113 109 134 188 133 105 155 219 109 111 164 277 114 111 133 244 116 104 147 143 114 107 187 237 103 110 230 291 98 103 218 113 105 137 205 266 147 131 209 286 124 114 252 154 127 111 178 179

[0097] The results are shown as follows Figure 6 The box plots are summarized in the table below. Glass wafers Static edge compressive strength (mean ± standard deviation) Type 1 (A-shaped edge, unpolished) 115±15N Type 2 (B-shaped edge, unpolished) 118±12N Type 3 (B-shaped edge, polished) 172±44N Type 4 (M-shaped edge, polished) 206±61N

[0098] Glass wafers with A-shaped and B-shaped edges exhibit similar static edge compressive strength, as confirmed by results obtained for the first and second types of glass wafers. This contrasts with the findings of Chen et al. regarding the edge strength of silicon wafers, which, when possessing B-shaped edges, exhibited the strongest edge strength in mechanical drop tests.

[0099] Edge polishing has been found to significantly increase static edge compressive strength, as confirmed by results obtained for type 2 and type 3 glass wafers. 1. Drop ball breakup height and drop ball impact resistance

[0100] Utilize Figure 7 The experimental setup shown tests the height at which a falling ball breaks.

[0101] A 100*60*1.1mm glass pane with different edge weights is placed vertically on a marble slab. Then, a 130g steel ball is dropped from a height of 20mm in 10mm increments until the glass breaks.

[0102] Regarding the drop height, the same sample type described above for static edge compressive strength was used. Ten samples were tested for each of the first and second sample types. Nine samples of the third sample type and 15 samples of the fourth sample type were tested. The measurements are shown in the table below: Type 1 Type II Type III Type 4 65 75 130 85 60 75 140 120 50 65 115 110 65 65 140 150 55 65 85 120 55 60 125 140 55 55 145 110 50 65 140 140 50 55 110 135 55 55 140 160 110 120 110 100

[0103] The results are shown as follows Figure 8 The box plots are summarized in the table below. Glass wafers Drop ball breakup height (mean ± standard deviation) Type 1 (A-shaped edge, unpolished) 56±6mm Type 2 (B-shaped edge, unpolished) 64±7mm Type 3 (B-shaped edge, polished) 126±19mm Type 4 (M-shaped edge, polished) 123±20mm

[0104] The impact resistance of a falling ball (in J) can be calculated by taking the ball's breakup height (in m), the ball's mass (in kg), and the g-force (in m / s²). 2 The product of ) and . The mass of the ball is 0.13 kg. The g-force is approximately 9.81 m / s². 2 The following results are obtained by calculating the impact resistance of the falling ball based on the drop height, the mass of the ball, and the g-force values ​​shown above. glass wafers Impact resistance of falling ball (mean ± standard deviation) Type 1 (A-shaped edge, unpolished) 0.071±0.008J Type 2 (B-shaped edge, unpolished) 0.082±0.009J Type 3 (B-shaped edge, polished) 0.161±0.024J Type 4 (M-shaped edge, polished) 0.157±0.026J

[0105] Glass wafers with A-shaped and B-shaped edges exhibit similar drop ball impact resistance, as confirmed by results obtained for the first and second types of glass wafers. This contrasts with the edge strength findings of Chen et al. regarding silicon wafers, which, when possessing B-shaped edges, exhibited the strongest edge strength in mechanical drop tests.

[0106] Edge polishing has been found to significantly increase resistance to falling ball impact, as confirmed by results obtained for type 2 and type 3 glass wafers. 3.4 PB strength

[0107] The 4PB strength was tested by placing a glass wafer under test on two support pins spaced 80 mm apart. Then, two loading pins, each 40 mm apart, were applied to the sides of the glass wafer opposite the support pins at a speed of 10 mm / min until the glass broke. The force at which the glass broke (fracture load force) was recorded. The loading pins were positioned symmetrically between the support pins, resulting in the following configuration: support pin – 20 mm – loading pin – 40 mm – loading pin – 20 mm – support pin. Therefore, the horizontal distance between the loading pins was 40 mm (load span), and the horizontal distance between the support pins was 20 mm + 40 mm + 20 mm = 80 mm (support span).

[0108] The tests included glass wafers with different modified edges, each measuring 100*60*1.1mm, namely samples of the third type of glass wafer (B-shaped edge, polished) mentioned above, as well as samples of the newly introduced fifth type (A-shaped edge, polished) and sixth type (B-shaped edge, polished, chemically tempered) glass wafers.

[0109] The fifth type of glass wafer mainly corresponds to the first type of glass wafer described above. However, compared to the first type of glass wafer, the edges of the fifth type of glass wafer are polished.

[0110] Type VI glass wafers primarily correspond to Type III glass wafers described above. However, unlike Type III glass wafers, Type VI glass wafers are chemically tempered. The surface compressive stress (CS) is in the range of approximately 250 to 350 MPa, and the layer depth (DoL) is in the range of approximately 6 to 11 μm.

[0111] Twenty samples were tested for each of the third, fifth, and sixth types of glass wafers.

[0112] The results are shown as follows Figure 9 The bar charts are summarized in the following table. Glass wafers Fracture load (mean ± standard deviation) Type 5 (A-shaped edge, polished) 288±19N Type 3 (B-shaped edge, polished) 283±21N Type 6 (B-shaped edges, polished, chemically tempered) 628±33N

[0113] Considering the sample width and thickness, as well as the difference between the support span and the loading span, the fracture load can be converted into a 4PB strength. The following average 4PB strength values ​​are derived from the average fracture load values ​​shown above: Glass wafers Average strength of 4 PB Type 5 (A-shaped edge, polished) 238MPa Type 3 (B-shaped edge, polished) 234MPa Type 6 (B-shaped edge, polished and chemically hardened) 519MPa

[0114] Glass wafers with A-shaped and B-shaped edges have similar 4PB strength, as confirmed by results obtained for glass wafers of types 5 and 3.

[0115] Chemical tempering has been found to significantly increase strength by 4 PB, as confirmed by results obtained for Type VI glass wafers. List of reference numerals 10 Glass wafers 11 First Surface 12 Second Surface 13 Thickness 14 Edge width 15. Height of the vertical surface 16 Vertical surfaces 17 Main connecting surfaces 18 secondary connection surfaces 20 glass wafers 21 First Surface 22 Second Surface 23 Thickness 24 Edge width 30 glass wafers 31 First Surface 32 Second Surface 33 Thickness 34 Edge width 35. Height of the vertical surface 36 Vertical surfaces 37 Main connecting surfaces 38 secondary connection surfaces 39 radius 50 glass wafers 51 pieces 52 pieces 53 Steel plate (sample holder) 54 Steel Blade (Wedge) 55. Direction of force 70 glass wafers 71 pieces 72 pieces 73 Marble Slab 74 steel balls 75. Direction of fall 76 ball drop height

Claims

1. A glass wafer having a first surface, a second surface, and an edge having an edge surface connecting the first surface and the second surface. The first surface and the second surface are substantially parallel to each other. The distance between the first and second surfaces, measured orthogonally to the first and second surfaces, is the thickness T of the glass wafer. The maximum extension range of the edge, measured parallel to the first and second surfaces and orthogonal to the edge surface, is the width W of the edge. Where the ratio of width W to thickness T is greater than 5% and / or less than 70%, and The surface region with less than 100% edge roughness is a low surface roughness region, where the surface roughness Ra of the low surface roughness region at the edge is less than 300 nm and / or greater than 0.1 nm.

2. The glass wafer as claimed in claim 1, wherein, Surface areas with more than 50% edge roughness are low surface roughness areas.

3. The glass wafer as claimed in any of the preceding claims, wherein, The portion of the non-low surface roughness region of the surface area at the edge is located in the transition zone from the edge toward the first and / or second surface.

4. The glass wafer as claimed in any of the preceding claims, wherein, Low surface roughness areas can be obtained through polishing.

5. The glass wafer as claimed in claim 4, wherein, Polishing includes polishing with a boar bristle brush.

6. The glass wafer as claimed in claim 4 or 5, wherein, Polishing is associated with the removal of material from the edge where the removal thickness is less than 300 μm and / or greater than 0.3 μm.

7. The glass wafer as claimed in any of the preceding claims, wherein, The shape of an edge is characterized by the fact that the edge has three distinguishable surfaces, namely (i) a vertical surface substantially perpendicular to the first and second surfaces, (ii) a primary connecting surface connecting the first surface of the glass wafer to the vertical surface of the edge, and (iii) a secondary connecting surface connecting the second surface of the glass wafer to the vertical surface of the edge. The primary connecting surface forms an angle of 30° to 60° with the first surface and with the perpendicular surface of the edge, and / or the secondary connecting surface forms an angle of 30° to 60° with the second surface and with the perpendicular surface of the edge; Preferably, the primary connecting surface and the secondary connecting surface are oriented such that the orientation of the primary connecting surface deviates from the orientation of the secondary connecting surface by an angle of 75° to 105°.

8. The glass wafer as claimed in any one of claims 1 to 6, wherein, The shape of the edge is characterized by the fact that the edge is circular, and in particular, it is approximately semi-elliptical. The approximately semi-elliptical has a first semi-axis with a length A1 equal to half the thickness T of the glass wafer and a second semi-axis with a length A2 equal to the width W of the edge. Preferably, the edge has a semi-circular shape, the semi-circle having a radius Rs equal to half the thickness T of the glass wafer and equal to the width W of the edge, such that the following equation is true: Rs = W = T / 2.

9. The glass wafer as claimed in any one of claims 1 to 6, wherein, The shape of an edge is characterized by the fact that the edge has three distinguishable surfaces, namely (i) a vertical surface substantially perpendicular to the first and second surfaces, (ii) a primary connecting surface connecting the first surface of the glass wafer to the vertical surface of the edge, and (iii) a secondary connecting surface connecting the second surface of the glass wafer to the vertical surface of the edge. The main connecting surface and the secondary connecting surface are formed in a circular shape, particularly in an approximately quarter-ellipse shape. The approximately quarter-ellipse has a first semi-axis perpendicular to the first and second surfaces of the glass wafer and a second semi-axis parallel to the first and second surfaces of the glass wafer, wherein Q1 is the length of the first semi-axis and Q2 is the length of the second semi-axis. Preferably, the primary connecting surface and the secondary connecting surface are formed such that these two surfaces appear as a quarter circle in the cross section of the glass wafer, wherein the radius Rq of the quarter circle corresponds to the width W of the edge; Preferably, the radius Rq is at least 0.01 mm and at most 1.5 mm, and / or the ratio of radius Rq to thickness T is greater than 5% and less than 50%.

10. The glass wafer as claimed in any of the preceding claims, wherein, The ratio of the distance from the outermost point of the edge to the first surface to the distance from the outermost point of the edge to the second surface is at least 0.5 and at most 2.

0.

11. The glass wafer as claimed in any of the preceding claims, wherein, The first and second surfaces of the glass wafer have substantially the same shape and the same surface area.

12. The glass wafer as claimed in any of the preceding claims, wherein, The glass wafer has a rectangular shape or is circular.

13. The glass wafer as claimed in any of the preceding claims, wherein, The surface areas of the first surface and the second surface are both at least 1 cm². 2 And at most 3000cm 2 .

14. The glass wafer as claimed in any of the preceding claims, wherein, The thickness T of the glass wafer is at least 0.05 mm and at most 5 mm.

15. The glass wafer as claimed in any of the preceding claims, wherein, The glass wafers are chemically temperable or have been chemically tempered.

16. The glass wafer as claimed in any of the preceding claims, wherein, The glass wafers are chemically tempered, and The glass wafer has a surface compressive stress CS of at least 150 MPa and at most 900 MPa at the first and / or second surfaces, and / or The depth DoL of the compressive stress layer at the first and / or second surface is greater than 1 μm and at most 50 μm.

17. The glass wafer as claimed in any of the preceding claims, wherein, The glass wafer has 4PB strength greater than 100 MPa Static edge compressive strength greater than 50N, and / or Impact resistance of a falling ball greater than 0.1J.

18. A glass wafer having a first surface, a second surface, and an edge connecting the first surface and the second surface. The first surface and the second surface are substantially parallel to each other. The distance between the first and second surfaces, measured orthogonally to the first and second surfaces, is the thickness T of the glass wafer. The maximum extension range of the edge, measured parallel to the first and second surfaces and orthogonal to the edge surface, is the width W of the edge. The ratio of width W to thickness T is greater than 10% and / or less than 70%, and the glass wafer is chemically tempered. The glass wafer has a surface compressive stress CS of at least 150 MPa and at most 900 MPa at the first and / or second surfaces, and / or The depth DoL of the compressive stress layer at the first and / or second surface is greater than 1 μm and at most 50 μm.

19. The glass wafer of claim 18, wherein, The shape of an edge is characterized by the fact that the edge has three distinguishable surfaces, namely (i) a vertical surface substantially perpendicular to the first and second surfaces, (ii) a primary connecting surface connecting the first surface of the glass wafer to the vertical surface of the edge, and (iii) a secondary connecting surface connecting the second surface of the glass wafer to the vertical surface of the edge. The primary connecting surface forms an angle of 30° to 60° with the first surface and with the perpendicular surface of the edge, and / or the secondary connecting surface forms an angle of 30° to 60° with the second surface and with the perpendicular surface of the edge; Preferably, the primary connecting surface and the secondary connecting surface are oriented such that the orientation of the primary connecting surface deviates from the orientation of the secondary connecting surface by an angle of 75° to 105°.

20. The glass wafer of claim 18, wherein, The edge shape is characterized by the fact that the edge is circular, and in particular, it is approximately semi-elliptical, with a first semi-axis whose length A1 is equal to half the thickness T of the glass wafer and a second semi-axis whose length A2 is equal to the width W of the edge. Preferably, the edge has a semi-circular shape, the semi-circle having a radius Rs equal to half the thickness T of the glass wafer and equal to the width W of the edge, such that the following equation is true: Rs=W=T / 2.

21. The glass wafer as claimed in claim 18, wherein, The shape of an edge is characterized by the fact that the edge has three distinguishable surfaces, namely (i) a vertical surface substantially perpendicular to the first and second surfaces, (ii) a primary connecting surface connecting the first surface of the glass wafer to the vertical surface of the edge, and (iii) a secondary connecting surface connecting the second surface of the glass wafer to the vertical surface of the edge. The primary and secondary connecting surfaces are formed in a circular shape, particularly in an approximately quarter-ellipse shape. The approximately quarter-ellipse has a first semi-axis perpendicular to the first and second surfaces of the glass wafer and a second semi-axis parallel to the first and second surfaces of the glass wafer, wherein Q1 is the length of the first semi-axis and Q2 is the length of the second semi-axis. Preferably, the primary connecting surface and the secondary connecting surface are formed such that the two surfaces appear as a quarter circle in the cross section of the glass wafer, wherein the radius Rq of the quarter circle corresponds to the width W of the edge; Preferably, the radius Rq is at least 0.01 mm and at most 1.5 mm, and / or the ratio of radius Rq to thickness T is greater than 5% and less than 50%.

22. The glass wafer as claimed in any one of claims 18-21, wherein, The ratio of the distance from the outermost point of the edge to the first surface to the distance from the outermost point of the edge to the second surface is at least 0.8 and at most 1.

2.

23. The glass wafer as claimed in any one of claims 18-22, wherein, The first and second surfaces of the glass wafer have substantially the same shape and the same surface area.

24. The glass wafer as claimed in any one of claims 18-23, wherein, The glass wafer has a rectangular shape or is circular.

25. The glass wafer as claimed in any one of claims 18-24, wherein, The surface areas of the first surface and the second surface are both at least 1 cm². 2 And at most 3000cm 2 .

26. The glass wafer as claimed in any one of claims 18-25, wherein, The thickness T of the glass wafer is at least 0.1 mm and at most 3 mm.

27. The glass wafer as claimed in any one of claims 18-26, wherein, The glass wafer has a strength of 4 PB, greater than 100 MPa. Static edge compressive strength greater than 50N, and / or Impact resistance of a falling ball greater than 0.1J.

28. A glass wafer having a first surface, a second surface, and an edge connecting the first surface and the second surface. The first surface and the second surface are substantially parallel to each other. The distance between the first and second surfaces, measured orthogonally to the first and second surfaces, is the thickness T of the glass wafer. The maximum extension range of the edge, measured parallel to the first and second surfaces and orthogonal to the edge surface, is the width W of the edge. The ratio of width W to thickness T is greater than 5% and / or less than 70%, and the glass wafer has a strength of 4PB greater than 100 MPa. Static edge compressive strength greater than 50N, and / or Impact resistance of a falling ball greater than 0.1J.

29. The glass wafer of claim 28, wherein, The shape of an edge is characterized by the fact that the edge has three distinguishable surfaces, namely (i) a vertical surface substantially perpendicular to the first and second surfaces, (ii) a primary connecting surface connecting the first surface of the glass wafer to the vertical surface of the edge, and (iii) a secondary connecting surface connecting the second surface of the glass wafer to the vertical surface of the edge. The primary connecting surface forms an angle of 30° to 60° with the first surface and with the perpendicular surface of the edge, and / or the secondary connecting surface forms an angle of 30° to 60° with the second surface and with the perpendicular surface of the edge; Preferably, the primary connecting surface and the secondary connecting surface are oriented such that the orientation of the primary connecting surface deviates from the orientation of the secondary connecting surface by an angle of 75° to 105°.

30. The glass wafer of claim 28, wherein, The shape of the edge is characterized by the fact that the edge is circular, and in particular, it is approximately semi-elliptical, with a first semi-axis whose length A1 is equal to half the thickness T of the glass wafer and a second semi-axis whose length A2 is equal to the width W of the edge. Preferably, the edge has a semi-circular shape, the semi-circle having a radius Rs equal to half the thickness T of the glass wafer and equal to the width W of the edge, such that the following equation is true: Rs=W=T / 2.

31. The glass wafer as claimed in claim 28, wherein, The shape of an edge is characterized by the fact that the edge has three distinguishable surfaces, namely (i) a vertical surface substantially perpendicular to the first and second surfaces, (ii) a primary connecting surface connecting the first surface of the glass wafer to the vertical surface of the edge, and (iii) a secondary connecting surface connecting the second surface of the glass wafer to the vertical surface of the edge. The primary and secondary connecting surfaces are formed in a circular shape, particularly in an approximately quarter-ellipse shape. The approximately quarter-ellipse has a first semi-axis perpendicular to the first and second surfaces of the glass wafer and a second semi-axis parallel to the first and second surfaces of the glass wafer, wherein Q1 is the length of the first semi-axis and Q2 is the length of the second semi-axis. Preferably, the primary connecting surface and the secondary connecting surface are formed such that the two surfaces appear as a quarter circle in the cross section of the glass wafer, wherein the radius Rq of the quarter circle corresponds to the width W of the edge; Preferably, the radius Rq is at least 0.01 mm and at most 1.5 mm, and / or the ratio of radius Rq to thickness T is greater than 5% and less than 50%.

32. The glass wafer as claimed in any one of claims 28-31, wherein, The ratio of the distance from the outermost point of the edge to the first surface to the distance from the outermost point of the edge to the second surface is at least 0.8 and at most 1.

2.

33. The glass wafer as claimed in any one of claims 28-32, wherein, The first and second surfaces of the glass wafer have substantially the same shape and the same surface area.

34. The glass wafer as claimed in any one of claims 28-33, wherein, The glass wafer has a rectangular shape or is circular.

35. The glass wafer as claimed in any one of claims 28-34, wherein, The surface areas of the first surface and the second surface are both at least 1 cm². 2 And at most 3000cm 2 .

36. The glass wafer as claimed in any one of claims 28-35, wherein, The thickness T of the glass wafer is at least 0.1 mm and at most 3 mm.

37. The glass wafer as claimed in any of the preceding claims, wherein, The glass is silicate glass, aluminosilicate glass, lithium aluminosilicate glass, borosilicate glass, or soda lime glass.

38. The glass wafer as claimed in any of the preceding claims, wherein, The glass comprises the following components in wt%: SiO2 45.0 to 75.0 wt%, B2O3 0 to 5.0 wt%, Al2O3 2.5 to 25.0 wt%, Li2O 0 to 10.0 wt%, Na2O 5.0 to 20.0 wt%, K2O 0 to 10.0 wt%, MgO 0 to 15.0 wt%, CaO 0 to 10.0 wt%, BaO 0 to 5.0 wt%, ZnO 0 to 5.0 wt%, TiO2 0 to 2.5 wt%, ZrO2 0 to 5.0 wt%, and P2O5 0 to 20.0 wt%.

39. The glass wafer as claimed in any one of claims 1-37, wherein, The glass comprises the following components in wt% as indicated: SiO2 70.0 to 85.0 wt%, B2O3 5.0 to 15.0 wt%, Al2O3 1.0 to 10.0 wt%, Li2O 0 to 3.0 wt%, Na2O 1.0 to 10.0 wt%, K2O 0 to 5.0 wt%, MgO 0 to 5.0 wt%, CaO 0 to 5.0 wt%, BaO 0 to 2.0 wt%, ZnO 0 to 3.0 wt%, TiO2 0 to 1.0 wt%, ZrO2 0 to 1.0 wt%, and P2O5 0 to 15.0 wt%.

40. The glass wafer according to any one of claims 1-37, wherein, The glass comprises the following components in wt% as indicated: SiO2 60.0 to 80.0 wt%, B2O3 0 to 5.0 wt%, Al2O3 0.0 to 2.0 wt%, Li2O 0 to 3.0 wt%, Na2O 5.0 to 15.0 wt%, K2O 5.0 to 15.0 wt%, MgO 0 to 5.0 wt%, CaO 1.0 to 10.0 wt%, BaO 0 to 5.0 wt%, ZnO 1.0 to 10.0 wt%, TiO2 0 to 1.0 wt%, ZrO2 0 to 1.0 wt%, and P2O5 0 to 15.0 wt%.

41. The glass wafer as claimed in any one of claims 1-37, wherein, The glass comprises the following components in indicated amounts by weight: SiO2 45.0 to 70.0 wt%, B2O3 5.0 to 15.0 wt%, Al2O3 2.0 to 15.0 wt%, Li2O 0 to 3.0 wt%, Na2O 1.0 to 10.0 wt%, K2O 5.0 to 15.0 wt%, MgO 0 to 5.0 wt%, CaO 0 to 5.0 wt%, BaO 0 to 2.0 wt%, ZnO 1.0 to 12.0 wt%, TiO2 1.0 to 10.0 wt%, ZrO2 0 to 2.0 wt%, and P2O5 0 to 15.0 wt%.

42. The glass wafer as claimed in any one of claims 1-37, wherein, The glass comprises the following components in indicated amounts (wt%): SiO2 45.0 to 70.0 wt%, B2O3 5.0 to 15.0 wt%, Al2O3 5.0 to 25.0 wt%, Li2O 0 to 3.0 wt%, Na2O 0 to 3.0 wt%, K2O 0 to 3.0 wt%, MgO 1.0 to 10.0 wt%, CaO 1.0 to 10.0 wt%, BaO 1.0 to 10.0 wt%, ZnO 0 to 3.0 wt%, TiO2 0 to 1.0 wt%, ZrO2 0 to 1.0 wt%, and P2O5 0 to 15.0 wt%.

43. The glass wafer as claimed in any of the preceding claims, wherein, The glass wafer has a curvature of less than 250 μm.

44. The glass wafer as claimed in any of the preceding claims, wherein, The surface roughness Ra of the first and / or second surfaces is preferably less than 500 nm and greater than 0.1 nm.

45. The glass wafer as claimed in any of the preceding claims, wherein, The glass wafer has a total thickness variation (TTV) of less than 20 μm.

46. ​​The glass wafer as claimed in any of the preceding claims, wherein, The glass has a transmittance of at least 40% at a wavelength of 350 nm.

47. The glass wafer as claimed in any of the preceding claims, wherein, The glass has an average linear coefficient of thermal expansion (CTE) of up to 10.0 ppm / K in the temperature range of 20°C to 300°C.

48. The glass wafer as claimed in any of the preceding claims, wherein, The glass has CTE (玻璃) This makes CTE (玻璃) With CTE (硅酸盐) The difference is at most 2.0 ppm / K.

49. The glass wafer as claimed in any of the preceding claims, wherein, The glass wafer has a drop ball breakage height greater than 80 mm.

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