Evaporation source arrangement, vacuum deposition system and method of coating a substrate

Abstract

A deposition source arrangement for depositing at least two layers onto a substrate is described. The deposition source arrangement (100) comprises a deposition source (101) comprising: a first vapor distribution pipe (110) having a first row of nozzles (111) with a first main deposition direction (M1) for depositing a first material onto a substrate; a second vapor distribution pipe (120) having a second row of nozzles (121) with a second main deposition direction (M2) for depositing a second material onto a substrate; and a third vapor distribution pipe (130) having a third row of nozzles (131) with a third main deposition direction (M3) for depositing a third material onto a substrate. The deposition source arrangement further comprises a rotary drive (113) for rotating the deposition source about a rotation axis. The first main deposition direction (M1) and the second main deposition direction (M2) are tilted towards each other to enable co-deposition of a mixed material layer onto a substrate, and the third row of nozzles is configured to simultaneously deposit a further one of the layers containing the third material onto the substrate above or below the mixed material layer.

Description

Technical Field

[0001] Embodiments of this disclosure relate to methods and apparatus for coating a substrate using layer stacks. More specifically, embodiments of this disclosure relate to evaporation source arrangements and vacuum deposition systems for depositing materials for OLED layer stacks on a substrate. Metal and / or organic layers of the OLED layer stack can be deposited on the substrate. Embodiments of this disclosure specifically relate to evaporation source arrangements and vacuum deposition systems, as well as methods for manufacturing OLED displays via thermal evaporation. Background Technology

[0002] Organic light-emitting diodes (OLEDs) are light-emitting diodes in which the electroluminescent layer is an organic compound film that emits light in response to an electric current. Because OLEDs emit light directly without the need for backlighting or color filters, OLED displays offer a wider color gamut and viewing angle than conventional LCD displays. Furthermore, OLEDs can be fabricated on flexible substrates, making them suitable for a wide variety of applications. OLEDs are used to manufacture television screens, computer monitors, mobile phones, and other handheld devices for displaying information. OLEDs can also be used for general spatial lighting. OLED displays may, for example, include an organic material layer deposited on a substrate between two electrodes in a manner that facilitates the formation of a matrix display panel with individually excitable pixels.

[0003] Organic and metallic materials are deposited on a substrate in a vacuum processing chamber for OLED manufacturing. Metallic materials are used as, for example, electrode materials or electron injection layer (EIL) materials. The materials to be deposited are evaporated using a evaporation source, and the evaporated material is guided onto the substrate through a nozzle. Metallic materials are typically evaporated in the evaporation source at temperatures of 1,000°C or higher, or 1,500°C or higher. Organic materials are typically evaporated in the evaporation source at temperatures between 250°C and 500°C.

[0004] Metal and organic vapor depositors can be used to produce organic light-emitting diodes (OLEDs). Other applications utilize vapor depositors to deposit metal or organic layers onto, for example, large-area substrates. OLED displays may include, for example, multiple layers of organic material located between two electrodes deposited on the substrate. One of the electrodes may include a transparent conductive layer, such as ITO or other transparent conductive oxide (TCO) materials. The second electrode may include a metal or metal alloy.

[0005] OLED pixels can be deposited on a substrate using a fine metal mask (IMM), also known as a pixel mask, which has multiple small pixel holes defining individual pixel regions on the substrate. Precise alignment between the IMM and the substrate is necessary for pixel deposition, which is challenging because each of the small pixels involves multiple layers to be deposited on top of each other on the corresponding anode.

[0006] Another technique for forming OLED pixels on a substrate uses photolithography to pattern the pixels instead of a fine metal mask (IMM). Here, the structure used as a masking layer is formed directly on the substrate before the actual pixel deposition. Alignment issues are reduced. However, rapidly and reliably coating substrates using OLED layer stacking without an IMM requires complex equipment and is also challenging.

[0007] In view of the above, improved evaporation source arrangements, vacuum deposition systems, and device manufacturing methods suitable for OLED manufacturing would be beneficial. Summary of the Invention

[0008] In view of the foregoing, the independent claims provide an arrangement of vapor deposition sources, a vacuum deposition system, and a method for coating a substrate in a vacuum chamber. Further aspects, benefits, and features of this disclosure will be apparent from the claims, description, and drawings.

[0009] According to one aspect, a vapor deposition source arrangement for depositing at least two layers on a substrate is provided. The vapor deposition source arrangement includes a vapor deposition source having: a first vapor distribution conduit having a first row of nozzles having a first principal vapor deposition direction for depositing a first material onto the substrate; a second vapor distribution conduit having a second row of nozzles having a second principal vapor deposition direction for depositing a second material onto the substrate; and a third vapor distribution conduit having a third row of nozzles having a third principal vapor deposition direction for depositing a third material onto the substrate. The vapor deposition source arrangement further includes a rotary driver for rotating the vapor deposition source about a rotation axis. The first and second principal vapor deposition directions are inclined toward each other to enable a mixed material layer to be co-deposited onto the substrate by co-depositing the first and second materials. The third row of nozzles is configured to deposit another layer comprising the third material onto the substrate above or below the mixed material layer.

[0010] In particular, the first primary evaporation direction and the third primary evaporation direction may be tilted away from each other so that another layer can be deposited below or above the mixed material layer during the movement of the substrate past the evaporation source.

[0011] Specifically, the nozzles in the first row of nozzles and the nozzles in the second row of nozzles are tilted toward each other such that the corresponding vapor plumes ejected by the first and second rows of nozzles overlap in the substrate plane to form a mixed material layer on the substrate. The nozzles in the third row of nozzles can be directed in another direction, i.e., toward a different substrate region, such that when impacting the substrate, the vapor plume ejected by the third row of nozzles does not substantially overlap with the vapor plumes ejected by the first (and second) rows of nozzles. During the substrate's movement past the vapor deposition source, a second vapor distribution pipe, a third vapor distribution pipe, and other vapor distribution pipes can be used to simultaneously deposit an additional layer and a mixed material layer onto the substrate. The additional layer does not contain the first and second materials ejected by the first and second rows of nozzles. During a single movement of the substrate past the vapor deposition source, two stacked layers can be deposited on the substrate, wherein at least one of the stacked layers is a mixed material layer.

[0012] According to another aspect, a vacuum deposition system is provided. The vacuum deposition system includes a first vacuum chamber and an arrangement of vapor deposition sources according to any of the embodiments described herein.

[0013] The vacuum deposition system may include: a substrate transport track configured to move a substrate along a substrate transport path past an evaporation source arrangement; and a shielding transport track positioned between the substrate transport track and the evaporation source arrangement, and configured to move a movable shield in front of the substrate for shielding edge regions of the substrate and / or for shielding a substrate carrier. The substrate transport track may be configured to move a substrate having a substantially vertical orientation past the evaporation source arrangement.

[0014] According to another aspect, a method for coating a substrate using a vapor deposition source in a vacuum chamber is provided. The vapor deposition source includes a first vapor distribution pipe having a first row of nozzles, a second vapor distribution pipe having a second row of nozzles, and a third vapor distribution pipe having a third row of nozzles. The method includes: rotating the vapor deposition source about a rotation axis to a first deposition position; and transporting the substrate along a substrate transport path through the vapor deposition source, while guiding a first material from the first vapor distribution pipe toward the substrate, guiding a second material from the second vapor distribution pipe toward the substrate, and guiding a third material from the third vapor distribution pipe toward the substrate. The first and second vapor distribution pipes co-deposit a mixed material layer onto the substrate, and the third vapor distribution pipe deposits another layer onto the substrate below or above the mixed material layer.

[0015] The first material, the second material, and / or the third material may be different materials, or may be or include at least part of the same material.

[0016] The embodiments also relate to apparatus for performing the disclosed methods, and include device components for performing each described method aspect. The method aspects can be performed by hardware components, a computer programmed with suitable software, by any combination of both, or in any other manner. Furthermore, the embodiments also relate to methods for operating the described apparatus. Methods for operating the described apparatus include method aspects for performing each function of the apparatus. The embodiments also relate to methods for manufacturing processed substrates (particularly coated substrates) in the vacuum deposition system described herein, and substrates (such as OLED substrates, particularly OLED displays) manufactured according to the methods described herein and / or using the systems described herein. Other apparatuses besides OLED displays can also be manufactured using the apparatus and methods described herein. Attached Figure Description

[0017] To gain a more detailed understanding of the features described above in this disclosure, a more specific description of the disclosure, which has been briefly summarized above, can be obtained by referring to embodiments. The accompanying drawings illustrate embodiments of this disclosure and are described below:

[0018] Figure 1 A schematic diagram of a vacuum deposition system with an arrangement of vapor deposition sources according to an embodiment is shown;

[0019] Figure 2 A schematic diagram of the vapor deposition source arrangement according to an embodiment is shown in a vertical section;

[0020] Figure 3 A schematic diagram of the vapor deposition source arrangement according to an embodiment is shown in a horizontal cross section;

[0021] Figure 4 A schematic diagram of the vapor deposition source arrangement according to an embodiment is shown in a horizontal cross section;

[0022] Figure 5 A schematic diagram of the arrangement of vapor deposition sources according to an embodiment in an idle position in a horizontal cross section is shown;

[0023] Figure 6A and Figure 6B A schematic diagram of the vapor deposition source arrangement according to an embodiment is shown in a horizontal cross-section, wherein the baffles have two different configurations; and

[0024] Figure 7 A schematic cross-sectional view of a substrate with OLED layer stacks manufactured according to the method of this disclosure is shown. Detailed Implementation

[0025] Reference will now be made in detail to various embodiments, one or more examples of which are illustrated in each figure. Each example is provided in an illustrative manner and is not intended to be limiting. For example, a feature shown or described as part of one embodiment may be used on or in combination with any other embodiment to produce yet another embodiment. This disclosure is intended to include such modifications and variations. In the following description of the drawings, the same reference numerals denote the same or similar parts. Generally, only differences relative to individual embodiments are described. Unless otherwise indicated, the description of a part or aspect of one embodiment may also be applied to a corresponding part or aspect of another embodiment.

[0026] OLED pixels can be formed on a substrate using photolithography and patterning, especially without a fine metal mask (IMM). An IMM has multiple pixel holes and is positioned in front of and aligned relative to the substrate before material deposition, allowing individual pixels to be deposited onto the substrate. OLED pixel patterning without an IMM is based on a structure that acts as a “mask” and is formed directly on the substrate before coating it with multiple materials in a vacuum deposition system. The structures formed on the substrate can include sidewalls adjacent to the pixel region, particularly sidewalls surrounding the pixel region, and overhanging structures extending at least partially above the pixel region from the sidewalls, such as… Figure 7 As exemplarily depicted in the text.

[0027] Figure 7 This is a schematic cross-sectional view showing a portion of an OLED layer stack 760 on a substrate 10 manufactured using OLED pixel patterning technology. An adjacent pixel defining layer (PDL) structure 715 is formed on the upper surface of the substrate 10 defining the pixel region 13, and a cantilever structure 720 is disposed on the PDL structure 715. The cantilever structure 720 includes a lower portion 720B having sidewalls and an upper portion 720A having a cantilever portion extending partially over the pixel region 13 from the lower portion 720B. Figure 7 In the diagram, a first sidewall 11 adjacent to the pixel region 13 is schematically depicted, and a first overhang 12 extends partially from the first sidewall 11 over the pixel region 13. As will be understood, the pixel region 13 may be surrounded by two or more sidewalls, and the overhang may be formed on two or more sidewalls and extend partially over the pixel region from different sides.

[0028] Individually switchable pixels can be formed on a substrate by depositing various materials onto a defined location beneath the overhang in the pixel region, followed by subsequent etching / patterning. Depositing metal and organic layers in the designated area, particularly beneath the overhang, is challenging.

[0029] The lower portion 720B, having a first sidewall 11, may be made of a conductive material intended to contact the cathode layer 711 of the OLED layer stack 760, and may allow the cathode layer 711 to be connected to a cathode potential. Alternatively or additionally, at least a portion of the first sidewall 11 may include an auxiliary cathode 716 intended to contact the cathode layer 711 of the OLED layer stack. The upper portion 720A forming the overhang may be made of a non-conductive inorganic material, or alternatively, a conductive inorganic material.

[0030] The OLED layer stack 760 typically includes, in the following order, an anode layer 714, a hole injection layer 718, at least one organic layer 713 (made of one or more optically active organic materials), an electron injection layer 712, a cathode layer 711, and at least one encapsulation layer 710.

[0031] like Figure 7 As shown, at least one organic layer 713 does not contact the first sidewall 11, and the cathode layer 711 contacts the first sidewall 11 below the first overhang 12. To ensure that the organic layer substantially does not contact the first sidewall 11 below the first overhang, at least one organic layer 713 may be deposited with an organic vapor plume 732 having a small opening angle, particularly an organic vapor plume 732 having a smaller opening angle than the metal vapor plume 731 of the subsequently deposited metal layer. To ensure that the cathode layer 711 reliably contacts the first sidewall 11 below the overhang, the cathode layer may be deposited with a metal vapor plume 731 having a large opening angle. However, a vapor plume with a large opening angle may not always be advantageous: for example, because a vapor plume with a large opening angle causes significant shading effects in several directions, this results in stray coatings on areas of the deposition system and on substrates that should not be coated.

[0032] In view of the above, methods and apparatus are described herein, based on embodiments thereof, to allow reliable deposition of OLED layer stacks on a substrate, particularly on a substrate having overhang structures formed thereon. Some methods described herein ensure or improve electrical contact between the cathode layer and the conductive sidewalls beneath the overhangs, and some methods described herein prevent or reduce contact between the organic layer and the conductive sidewalls beneath the overhangs. Generally, low contact resistance and large contact area between the cathode layer and the conductive sidewalls are advantageous, for example, to reduce or prevent the impact of poor cathode contact on the IV curve of the manufactured OLED device.

[0033] The embodiments described herein provide evaporation sources configured to rapidly and reliably deposit several materials onto a substrate, for example, for coating a substrate with several layers of an OLED layer stack above each other. Furthermore, the vacuum deposition system described herein, having one or more evaporation sources, is compact, cost-effective, and has a small footprint. The embodiments described herein can be used to deposit layers of an OLED layer stack on a substrate having overhang structures formed thereon. The embodiments described herein can also be used for other applications, such as for depositing OLED layer stacks through pixel masks or fine metal masks, and / or for depositing two or more other types of layer stacks on a substrate.

[0034] Figure 1 A schematic top view illustrates a vacuum deposition system 1000 having an evaporation source arrangement 100 according to an embodiment described herein. The vacuum deposition system 1000 includes a first vacuum chamber 1001 housing an evaporation source 101, and optionally one or more additional vacuum chambers housing one or more additional evaporation sources (e.g., a second evaporation source 102 and / or a third evaporation source 103). The vacuum deposition system 1000 may include at least five or at least ten evaporation sources for coating a substrate in multiple layers. The evaporation sources may be configured to coat a vertically or substantially vertically oriented substrate transported via a substrate transport track 1013. A variety of materials, including one or more metals and one or more organic materials, may be sequentially deposited onto the substrate to provide layer stacks, particularly OLED layer stacks, on the substrate. For example, the vacuum deposition system 1000 may include ten or more evaporation sources for coating a substrate in multiple layers.

[0035] In this disclosure, "vacuum deposition system" should be understood as a system or arrangement configured for vacuum deposition of material on a substrate. A vacuum chamber or "vacuum processing chamber" should be understood as a chamber configured for vacuum deposition. The term "vacuum" as used herein can be understood as a technical vacuum with a vacuum pressure less than, for example, 10 mbar. Typically, the pressure in a vacuum chamber as described herein can be between 10 mbar and... -5 millibars and about 10 -8 Between millibars, especially between 10 -5 millibars and 10 -7 Between milligrams.

[0036] The vacuum deposition system 1000 may include a substrate transport track 1013 configured to move a substrate 10 along a substrate transport path T past a vapor deposition source 101 and optionally past another vapor deposition source. The substrate transport track 1013 may extend at least partially through a first vacuum chamber 1001 and through an optional additional vacuum chamber, and may include a substrate transport system configured for substrate transport, such as a roller transport system, one or more linear motors, and / or a magnetic levitation system adapted to move the substrate relative to and past the vapor deposition source. During transport and / or deposition, the substrate may be carried by a substrate carrier 1020.

[0037] The vacuum deposition system 1000 may further include a shielding transport track 1012 extending between a substrate transport track 1013 and an evaporation source arrangement in a first vacuum chamber 1001. The shielding transport track 1012 is configured to move a movable shield 1030 in front of the substrate 10 to shield one or more edge regions of the substrate 10 and / or to shield at least a portion of the substrate carrier 1020 supporting the substrate 10. The movable shield 1030 may be a movable edge exclusion shield having a shielding frame for covering one or more edge regions of the substrate. The shielding transport track 1012 may be located between the substrate transport track 1013 and the evaporation source 101 in the first vacuum chamber 1001 and may include a shielding transport system, such as a roller transport system, one or more linear motors and / or a magnetic levitation system, adapted to move the movable shield 1030 in front of the substrate 10 such that one or more edge regions of the substrate are covered during coating with the evaporation source 101. Figure 1 The illustration is shown in the middle.

[0038] The movable shielding component 1030 can move back and forth on the shielding component transport track 1012, such as... Figure 1 The corresponding arrows schematically indicate that during coating with vapor deposition source 101, subsequent substrates moving along the substrate transport path T can be shielded by movable shielding member 1030. Each vapor deposition source may have an associated movable shielding member that can move back and forth on a (corresponding) shielding transport track to prevent edge regions of the substrate from being coated as the substrate moves past the corresponding vapor deposition source.

[0039] Therefore, an online system is provided that allows for the continuous deposition of multiple layers on a substrate while the substrate moves through multiple evaporation sources via a vacuum deposition system 1000.

[0040] The embodiments described herein specifically relate to material deposition, such as for display fabrication on large-area substrates. According to some embodiments, the large-area substrate or the carrier supporting one or more substrates may have a diameter of 0.5 m.2 Or larger sizes, especially 1m 2 Or even larger sizes. For example, the deposition system can be adapted to process large-area substrates, such as 4.5 generation substrates (which correspond to approximately 0.67 μm). 2 The substrate (0.73 × 0.92 m) and the 5th generation substrate (which corresponds to approximately 1.4 m) 2 The substrate (1.1m × 1.3m) and the 6th generation substrate (which corresponds to approximately 2.7m) 2 (1.5m × 1.8m)), Generation 7.5 substrate (which corresponds to approximately 4.29m) 2 The substrate (1.95m × 2.2m) and the 8.5th generation substrate (which corresponds to approximately 5.7m) 2 The substrate (2.2m × 2.5m), or even a 10th generation substrate. This corresponds to approximately 8.7m. 2 The substrate (2.85m × 3.05m) can be similarly implemented, even larger generations (such as 11th and 12th generations) and corresponding substrate areas can be achieved. According to a further embodiment, half the size of the aforementioned substrate generation can be processed. Alternatively or additionally, semiconductor wafers can be processed and coated in a deposition system according to this disclosure.

[0041] Figure 2 A vapor deposition source arrangement 100 according to an embodiment described herein is shown in a vertical cross-section. In this disclosure, "vapor deposition source apparatus" should be understood as an arrangement configured for material deposition by vapor deposition on a substrate. The vapor deposition source arrangement 100 may have a crucible 112 and a vapor distribution conduit, the crucible 112 being configured to vapor deposit the same or different source material to be deposited onto the substrate, and the vapor distribution conduit being configured to guide the vaporized source material to the substrate through a plurality of nozzles. For example, the vapor distribution conduit or vapor distribution conduit may provide a line source having a plurality of nozzles arranged in a row (or "line array") one above the other along the longitudinal direction of the vapor distribution conduit. The nozzle rows may be arranged along the longitudinal direction of the vapor distribution conduit (generally a substantially vertical direction) to provide a substantially vertical line source. Each vapor distribution conduit may have a (single) row of nozzles, particularly suitable for coating a substrate having a substantially vertical orientation with a single vertical nozzle row.

[0042] As used in this article, "generally vertical direction" refers to a direction that corresponds to the direction of gravity or deviates from the direction of gravity by less than 10°.

[0043] For example, the source material to be deposited can be an inorganic material, especially a metallic material used as an electrode material or an electron transport layer material in OLED layer stacking, or the source material can be an organic material used in the production of organic light-emitting diodes (OLEDs).

[0044] like Figure 2The diagram schematically depicts a vapor deposition source 101 including a first vapor distribution conduit 110. Further vapor distribution conduits for the vapor deposition source are not shown. Figure 2 The vertical cross-sectional view is shown, but in, for example Figure 3 The first vapor distribution conduit 110 is shown in a horizontal cross-sectional view. The first vapor distribution conduit 110 has a row of nozzles 111, which may be arranged along the longitudinal direction of the first vapor distribution conduit 110, for example, in a substantially vertical linear array above each other. The vapor deposition source may be, for example, a line source for coating a substrate in a substantially vertical orientation. The vapor deposition source 101 may be configured to deposit at least three materials onto the substrate using three or more vapor distribution conduits arranged adjacent to each other.

[0045] The first row of nozzles 111 includes multiple nozzles, particularly twenty or more. Each nozzle has a primary vapor deposition direction. The "primary vapor deposition direction" of a nozzle can be understood as the direction defined by the nozzle opening and the nozzle channel of the nozzle (typically corresponding to the direction of the nozzle channel). The generally conical vapor plume ejected by the nozzle is typically centered on the primary vapor deposition direction of the nozzle; for example, the majority of vapor particles in the plume propagate along the primary vapor deposition direction. Specifically, the vapor plume ejected by the nozzle is defined by the primary vapor deposition direction and the opening angle of the plume. The vapor plume may be rotationally symmetrical with respect to the primary vapor deposition direction, and / or the vapor plume may be shaped by one or more shaping shields 203 to be symmetrical or asymmetrical with respect to the primary vapor deposition direction or with respect to the nozzle axis.

[0046] If the nozzle channels of the first row of nozzles 111 are substantially parallel to each other and arranged vertically relative to each other, the nozzles of the first row of nozzles 111 provide a first principal vapor deposition direction M1 relative to the substrate surface. Figure 2 The diagram schematically depicts a parallel vapor plume propagating in the first primary vapor deposition direction M1. Therefore, the first row of nozzles 111 is characterized by the (common) primary vapor deposition direction of the nozzles. Figure 2 The first row of nozzles 111 has a first principal vapor deposition direction M1. The other rows of nozzles described herein are defined by corresponding principal vapor deposition directions, which are common between the nozzles in the corresponding rows (see, for example...). Figure 3 ).

[0047] The vapor deposition source arrangement 100 further includes a rotary driver 113 for rotating the vapor deposition source 101 about a rotation axis R1. Additionally, a controller 114 may be provided for controlling the rotational motion of the vapor deposition source 101.

[0048] Figure 3A schematic diagram of a vapor deposition source arrangement 100 with a vapor deposition source 101 according to an embodiment described herein is shown in a horizontal cross section. The vapor deposition source 101 includes a first vapor distribution conduit 110, a second vapor distribution conduit 120, and a third vapor distribution conduit 130. The first vapor distribution conduit 110 has a first row of nozzles 111 with a first principal vapor deposition direction M1 for depositing a first material onto a substrate. The second vapor distribution conduit 120 has a second row of nozzles 121 with a second principal vapor deposition direction M2 for depositing a second material onto a substrate. The third vapor distribution conduit 130 has a third row of nozzles 131 with a third principal vapor deposition direction M3 for depositing a third material onto a substrate.

[0049] like Figure 3 As shown, the first primary evaporation direction M1 and the second primary evaporation direction M2 are inclined toward each other to enable the co-deposition of a mixed material layer onto the substrate via co-deposition, and the third row of nozzles is configured to simultaneously deposit another layer containing a third material onto the substrate below or above the mixed material layer during the substrate's movement past the evaporation source. Specifically, in some embodiments, the first primary evaporation direction M1 and the third primary evaporation direction M3 may be inclined away from each other to enable the deposition of a mixed material layer and another layer on the substrate, one above the other, during the substrate's movement past the evaporation source.

[0050] Specifically, the first and second primary evaporation directions may be inclined toward each other, particularly to impact the substrate at adjacent or corresponding deposition points, and the third primary evaporation direction may be pointed in another direction to impact the substrate at deposition points spaced apart from other deposition points. Specifically, when impacting the substrate, the vapor plume ejected by the third row of nozzles may substantially not overlap with the vapor plumes ejected by the first and second rows of nozzles. The evaporation source is configured to deposit the additional layer and the mixed material layer on top of each other onto the substrate during a single movement of the substrate through the evaporation source maintained at the first deposition position.

[0051] The first vapor distribution pipe 110, the second vapor distribution pipe 120, and the third vapor distribution pipe 130 may be mounted on the source body 301 to rotate together with the source body 301 about a rotation axis R1. In some embodiments, the first vapor distribution pipe 110, the second vapor distribution pipe 120, and the third vapor distribution pipe 130 are mounted adjacent to each other to provide a front side 60 of a vapor deposition source 101, the front side 60 of which includes a nozzle array and can be guided toward a substrate to coat the substrate by rotating the vapor deposition source to a deposition position. Figure 3 As exemplarily shown in the figure.

[0052] The first vapor distribution conduit 110 may be arranged between the second vapor distribution conduit 120 and the third vapor distribution conduit 130. For example, the first vapor distribution conduit 110 may be installed between the second vapor distribution conduit 120 and the third vapor distribution conduit 130, such that the first row of nozzles 111 acts as a central row of nozzles arranged between the two rows of nozzles in the second and third vapor distribution conduits. When the first vapor distribution conduit and the third vapor distribution conduit are mounted adjacent to each other on the source body 301, the inclination of the first principal evaporation direction M1 away from the third principal evaporation direction M3 can help reduce or avoid overlap between the third material and the first material on the substrate. For example, the distance between the first row of nozzles 111 and the third row of nozzles 131 may be 30 cm or less, particularly 10 cm or less, to provide a compact rotatable evaporation source. The distance between the first row of nozzles 111 and the second row of nozzles 121 may be 30 cm or less, particularly 10 cm or less, to improve the overlap rate between the first material and the second material.

[0053] Each vapor distribution pipe can be fluidly connected to a corresponding vapor deposition crucible configured to vapor deposit the corresponding source material. The vapor deposition crucible can be mounted at the vapor deposition source 101 so that it can rotate together with the source body 301.

[0054] The front side 60 of the vapor deposition source used herein includes a first row of nozzles, a second row of nozzles, and a third row of nozzles arranged adjacent to each other and opposite to the rear side 61 of the vapor deposition source. During material deposition onto the substrate, the front side 60 of the vapor deposition source typically faces the substrate. The front side 60 of the vapor deposition source may, for example, be defined as a horizontal line intersecting the first row of nozzles 111 (= the center row of nozzles of the vapor deposition source in the illustrated example) and extending tangentially along the rotational trajectory of the first row of nozzles 111. Alternatively, the front side 60 of the vapor deposition source may be defined as extending along a connecting line that connects the geometric center of the vapor distribution conduit of the vapor deposition source in a horizontal cross-section.

[0055] The first row of nozzles 111 and the second row of nozzles 121 are inclined such that the vapor plumes ejected from the first vapor distribution channel and the second vapor distribution channel overlap to form a mixed material layer by co-deposition on the substrate. Specifically, the first and second principal evaporation directions are not parallel, but approach each other in a direction away from the evaporation source (towards the substrate) to form an overlapping region on the substrate, wherein the first and second materials impact synchronously during material deposition. In some embodiments, the nozzle channels of the first row of nozzles and the nozzle channels of the second row of nozzles may be inclined toward each other, such as... Figure 3The diagram is schematically depicted. Alternatively or additionally, a shaping shield 203 may be arranged on the front side of the first and second vapor deposition tubes to limit the opening angle of the vapor plumes ejected by the first row of nozzles and the second row of nozzles. The shaping shield 203 may be configured to ensure a large overlap area on the substrate, for example, by limiting the vapor plume ejected by the first row of nozzles and / or by limiting the vapor plume ejected by the second row of nozzles. The first impact area of ​​the first material on the substrate may substantially overlap with the second impact area of ​​the second material on the substrate, particularly with an overlap ratio of 80% or greater, particularly 90% or greater. The overlap ratio may be defined as the ratio between the first impact area and the overlap area or the ratio between the second impact area and the overlap area. A high-quality mixed material layer may be deposited onto the substrate.

[0056] The third row of nozzles 131 can be arranged such that the vapor plume ejected by the third row of nozzles does not overlap or substantially does not overlap with the vapor plumes ejected by the first row of nozzles and the second row of nozzles in the substrate plane. Specifically, the third primary vapor deposition direction M3 is configured such that an additional layer can be deposited using the third vapor distribution conduit during the deposition of the mixed material layer, whereby this additional layer does not include the first and / or second materials of the mixed material layer ejected by the first and second vapor distribution conduits. Depending on the direction of movement of the substrate past the vapor deposition source and / or depending on the arrangement of the respective vapor distribution conduits at the vapor deposition source (e.g., a “mirror arrangement” is possible in the embodiment shown in the figures), the additional layer can be deposited above or below the mixed material layer. Figure 3 In the illustrated embodiment, the substrate 10 moves along the substrate transport path T past the vapor deposition source 101 so that, during the movement of the substrate past the vapor deposition source, another layer is deposited onto the substrate 10 using the third vapor distribution pipe 130, and a mixed material layer is deposited directly and continuously on top of the other layer using the first vapor distribution pipe and the second vapor distribution pipe.

[0057] Specifically, the first and third principal evaporation directions may not be parallel, but rather diverge from each other in a direction away from the evaporation source (towards the substrate) to avoid overlapping areas where the first and third materials simultaneously impact each other on the substrate during material deposition. In some embodiments, the nozzle channels of the first and third rows of nozzles may be inclined away from each other. Alternatively or additionally, a shaping shield 203 may be disposed on the front side of the first and third vapor deposition tubes to limit the opening angle of the vapor plumes ejected by the first and third rows of nozzles. The shaping shield 203 may be configured to reduce or prevent overlapping areas on the substrate, for example, by limiting the vapor plumes ejected by the first row of nozzles and / or by limiting the vapor plumes ejected by the third row of nozzles in the region between the vapor plumes. The first impact area of ​​the first material (and the second material) on the substrate may be offset from the second impact area of ​​the third material on the substrate, such that “separate” layers may be deposited on the substrate above each other.

[0058] According to the embodiments described herein, a rotatable vapor deposition source is configured to coat a substrate with at least two layers on top of each other by moving the substrate through the vapor deposition source. At least one of the layers is a mixed material layer comprising at least two materials co-deposited using at least two vapor distribution channels. This provides a compact and space-saving vacuum deposition system and reduces the need for a fewer number of vapor deposition sources to coat substrates with multilayer stacks, such as OLED layer stacks.

[0059] Furthermore, due to the rotatability of the vapor deposition source and the optional tilting of each nozzle array relative to each other (towards / away from each other), each vapor plume guided from the vapor deposition source to the substrate can have a tilted primary vapor deposition direction. For example, in Figure 3 In the embodiments depicted, the principal deposition direction of at least some of the nozzle rows may be tilted relative to the surface normal SN of the substrate. The first principal deposition direction M1 of the first row of nozzles 111 may be tilted more strongly relative to the surface normal SN than the third principal deposition direction M3 of the third row of nozzles. Therefore, two or more layers or materials deposited on the substrate may extend to different degrees below the first overhang 12, which may be suitable for OLED pixel patterning technology.

[0060] For example, in Figure 3In the illustrated embodiment, a first material deposited using the first row of nozzles 111 can reach a first position below the first overhang 12 (e.g., to provide contact between the first material and the first sidewall 11 below the overhang), a second material deposited using the second row of nozzles 121 can reach a second position below the first overhang 12, and / or a third material deposited using the first row of nozzles 131 can reach a third position below the first overhang 12. Specifically, the first primary evaporation direction M1 can be more strongly inclined relative to the surface normal SN compared to the second primary evaporation direction M2 and / or the third primary evaporation direction M3. Optionally, the second primary evaporation direction M2 can be more strongly inclined relative to the surface normal SN compared to the third evaporation direction M3. Deposition of the first material below the first overhang 12 can be increased by tilting the first primary evaporation direction M1 toward the region below the first overhang 12, for example, to increase or improve the contact area between the first material (which may be the metal of the cathode layer) and the first sidewall 11 below the first overhang. Alternatively or additionally, when the third primary vapor deposition direction M3 is inclined less towards or even away from the region below the first overhang 12, the deposition of the third material below the first overhang 12 can be reduced. For example, contact between the third material and the first sidewall 11 below the first overhang 12 can be reduced or prevented. Therefore, as Figure 7 As shown, this can promote the deposition of layers stacked at different locations below the overhang.

[0061] The vapor deposition source 101 can be configured to coat a substrate with one or more inorganic materials. In some embodiments that can be combined with other embodiments described herein, the vapor deposition source 101 is a metal source configured to deposit a first metal layer onto the substrate while co-depositing a mixed metal layer above or below the first metal layer. Specifically, the first material, the second material, and the second material can be metals or may include metals, and the vapor deposition source 101 can be configured to deposit (at least) two metal layers onto the substrate. Co-deposition can be performed by moving the substrate and the vapor deposition source relative to each other, so that the first metal layer from the third vapor distribution channel and the mixed metal layer from the first vapor distribution channel and the second vapor distribution channel simultaneously coat the substrate. Depending on the direction of movement of the substrate 10 through the vapor deposition source, the first metal layer can be deposited below or above the mixed metal layer.

[0062] In some implementations, the evaporation source 101 is configured to deposit an electron injection layer (EIL) comprising or composed of a third material, and to deposit a mixed metal cathode layer comprising a first material and a second material co-deposited above the electron injection layer. For example, refer to Figure 7The OLED substrate shown has an electron injection layer 712 and a cathode layer 711 deposited one on top of the other by moving the substrate 10 through the evaporation source 101. The cathode layer 711 can be deposited to reach the region below the first overhang 12 further than the electron injection layer 712 to provide good electrical contact between the cathode layer 711 and the first sidewall 11. For example, the first principal evaporation direction M1 of the first row of nozzles 111 (and optionally, the second principal evaporation direction M2 of the second row of nozzles 121) can be tilted more strongly toward the region below the first overhang 12 than the third principal evaporation direction M3 of the third row of nozzles 131. This can reduce or prevent contact between the electron injection layer 712 and the first sidewall 11.

[0063] exist Figure 3 In the middle, the evaporation source 101 is arranged at the first deposition site, specifically by using Figure 2 The rotary driver 113 shown rotates the vapor deposition source 101 to a first deposition position. In the first deposition position, the nozzles of the first row of nozzles 111 are tilted at a first tilt angle α1 relative to the surface normal SN of the substrate 10 to increase the deposition of the first material below the first overhang 12. The substrate 10 is transported past the vapor deposition source 101 in the first deposition position, while the first material is guided from the first row of nozzles 111 toward the substrate.

[0064] Specifically, compared to the primary evaporation direction perpendicular to the substrate surface, the first primary evaporation direction M1 may be inclined "towards" the region below the first overhang 12 to increase the deposition of the first material below the first overhang 12. Specifically, the first material may be a metal, particularly silver, and at the first deposition location, the first primary evaporation direction M1 is inclined to increase the contact area between the metal and the first sidewall below the first overhang. A cathode layer may be deposited together with the first vapor distribution conduit 110, which has improved electrical contact with the first sidewall 11.

[0065] In some embodiments, the first tilt angle α1 is 15° or greater relative to the surface normal sn, particularly 30° or greater, or even 45° or greater. Alternatively or additionally, the first opening angle α of the vapor plume ejected by the first row of nozzles 111 may be 40° or greater and 120° or less. The combination of the large opening angle α of the vapor plume and the first tilt angle α1 results in increased material deposition below the overhang and reliably ensures electrical contact between the deposited first material and the first sidewall 11. For example, in some embodiments, the first tilt angle α1 may be 25° or greater, and the first opening angle α may be between 40° and 80°, thereby ensuring that the material deposition below the overhang has an angle of inclination of the outermost vapor particles of the vapor plume relative to the surface normal, for example, 65°.

[0066] The opening angle of the steam plume can be limited and / or shaped by the shaping shield 203, which can be arranged in front of one or more rows of nozzles, such as... Figure 3 The diagram is schematically depicted. For example, one or more shaping shields 203 are arranged in front of the first row of nozzles to shape the vapor plume ejected by the first row of nozzles, to shape the vapor plume ejected by the second row of nozzles, and / or to shape the vapor plume ejected by the third row of nozzles. In some embodiments, the vapor plumes may be shaped asymmetrically with respect to the respective principal vapor deposition direction of the respective row of nozzles.

[0067] The controller of the vapor deposition source arrangement 100 can be configured to rotate the vapor deposition source to a first deposition position before the substrate is transported past the vapor deposition source. During the transport of the substrate 10 past the vapor deposition source for substrate coating, the controller can maintain the vapor deposition source in the first deposition position. After the substrate has been transported past the vapor deposition source, the controller can optionally cause the vapor deposition source to move (e.g., rotate) to another position, such as... Figure 5 The unused locations are shown.

[0068] At the first deposition location, at least the first primary evaporation direction M1 may be tilted relative to the surface normal of the substrate, for example, tilted by a first tilt angle of 15° or greater, particularly 30° or greater.

[0069] According to some embodiments described herein, at a first deposition location, the front side 60 of the vapor deposition source is inclined at a first sub-angle X1 relative to the substrate transport path T, and the front surface of the first vapor distribution conduit 110, which is provided with a first row of nozzles 111, is inclined at a second sub-angle X2 relative to the front side 60 of the vapor deposition source. The sum of the first sub-angle X1 and the second sub-angle X2 defines the first tilt angle α1 of the first primary vapor deposition direction M1 relative to the surface normal SN of the substrate. Specifically, the first sub-angle X1 may be 10° or greater, particularly 15° or greater, and the second sub-angle X2 may be 15° or greater, particularly 25° or greater. Therefore, the first tilt angle α1 of the first primary vapor deposition direction M1 relative to the surface normal may be 25° or greater, particularly 40° or greater.

[0070] In other words, the first tilt angle α1 of the first primary vapor deposition direction M1 relative to the surface normal can be based on two contributions: (1) the tilt of the first row of nozzles 111 relative to the front side 60 (i.e., the nozzle channel is not perpendicular to the front side 60), and (2) the tilt of the front side 60 of the entire vapor deposition source relative to the previous deposition position, wherein the front side 60 is parallel to the substrate transport path T. The first contribution can be obtained and adjusted by rotating the vapor deposition source about the rotation axis R1 to the tilted position, and the first contribution can be obtained and adjusted, for example, by the specific geometry and / or arrangement of the front surface of the first vapor distribution conduit and / or the first row of nozzles, such that the nozzle channel of the first row of nozzles is tilted relative to the front side 60 (i.e., not perpendicular).

[0071] The two contributions to the first tilt angle α1 described above can increase the total tilt of the first primary evaporation direction M1 relative to the surface normal SN, further increasing or decreasing deposition below the overhang, depending on the material or layer to be deposited. Furthermore, the primary evaporation directions of several nozzle rows can be tilted uniformly (e.g., via source rotation) and tilted relative to each other (e.g., via nozzles tilted relative to the front row by 60 degrees), increasing flexibility and allowing the deposition of specific layers on the substrate using a single evaporation source. This can improve deposition rate and deposition flexibility. In particular, the angle at which vapor particles impact the substrate can be adapted, for example, to provide tilted deposition under overhang structures, and / or vapor plumes ejected by nozzles in adjacent rows can be tilted relative to each other, enabling the co-deposition of mixed layers or the deposition of subsequent layers stacked on top of each other onto the substrate.

[0072] In some embodiments, the vapor deposition source 101 is an organic source, i.e., a vapor deposition source configured to coat a substrate with at least two organic layers (i.e., layers containing organic material). Specifically, the vapor deposition source may be configured to deposit a first organic layer using a third vapor distribution conduit 130, and to co-deposit a mixed organic layer using a first vapor distribution conduit 110 and a second vapor distribution conduit 120. In some embodiments, the OLED layer stack may include multiple organic layers, e.g., two or more, three or more, five or more, or even eight or more organic layers. The vapor deposition source described herein enables the simultaneous coating of a substrate with at least two organic layers (including at least one mixed organic layer), providing a compact and space-saving vacuum deposition system. Furthermore, as described above, one or more organic layers can be deposited via “angled deposition.” For example, the first principal vapor deposition direction of the first vapor distribution conduit configured for organic layer deposition may be tilted away from the area below the first overhang 12 to reduce or avoid contact between the organic layer and the first sidewall 11 and the first overhang 12.

[0073] In some embodiments that can be combined with other embodiments described herein, the vapor deposition source arrangement 100 further includes a shaping shield 203 configured to limit the opening angle of the vapor plume ejected by at least one of the first, second, and third rows of nozzles. For example, the shaping shield 203 may be disposed in front of the first and third rows of nozzles and configured to prevent overlap between the vapor plumes ejected from the first row of nozzles onto the substrate and the vapor plumes ejected from the third row of nozzles onto the substrate. Alternatively or additionally, the shaping shield 203 may be disposed in front of the first and second rows of nozzles and configured to ensure a large overlap area between the vapor plumes ejected from the first row of nozzles and the vapor plumes ejected from the second row of nozzles in the plane of the substrate.

[0074] In some embodiments, the shaping shield 203 may be attached to the front side of one or more vapor distribution pipes to rotate together with the vapor deposition source. For example, in Figure 3 In the illustrated embodiment, a shaping shield 203 is mounted at the vapor deposition source 101. The shaping shield 203 protrudes from the vapor distribution conduit to limit the opening angle of the vapor plume ejected by the nozzle rows. The shaping shield 203 may include a shaped surface extending between adjacent nozzle rows in the longitudinal direction of the vapor distribution conduit.

[0075] In some embodiments, the vapor deposition source arrangement 100 may include an idle shield 202 that partially surrounds the vapor deposition source, for example at an angle of 90° or greater or 120° or greater, wherein a rotary driver is configured to rotate the vapor deposition source 101 relative to the idle shield 202 to an idle position in which the first row of nozzles, the second row of nozzles, and the third row of nozzles point toward the idle shield 202. Figure 5 This is a schematic diagram of a vapor deposition source in an idle position, wherein the front side 60 of the vapor deposition source points to the inner surface of the idle shield 202.

[0076] When no substrate is being transported past the vapor deposition source, the vapor deposition source 101 can be rotated to an idle position to avoid stray coating, for example, on the chamber surface. In the idle position, the first, second, and third materials can be guided toward the inner surface of the idle shroud 202, which can act as a baffle to block the vapor propagation path of the nozzle array. Optionally, the idle shroud 202 can be at least partially cooled such that vapor materials impacting the inner surface of the idle shroud 202 condense on and accumulate thereon without being substantially reflected.

[0077] In some embodiments that can be combined with other embodiments described herein, the first row of nozzles, the second row of nozzles, and the third row of nozzles each comprise twenty or more nozzles arranged in a substantially vertical nozzle array, one above the other, and the first, second, and third vapor distribution conduits are configured as vertical sources arranged adjacent to each other on a common rotatable source body of the vapor deposition sources. The first vapor distribution conduit 110 may be arranged between the second vapor distribution conduit 120 and the third vapor distribution conduit. The first row of nozzles 111 may be arranged between the second row of nozzles 121 and the third row of nozzles 131.

[0078] In some embodiments, the first row of nozzles 111 is configured to spray a steam plume having a first opening angle, and the second row of nozzles 121 is configured to spray a steam plume having a second opening angle. The second opening angle may be greater than the first opening angle. Specifically, in a horizontal cross-section, the first opening angle may be 40° or greater and 60° or less, and the second opening angle may be 60° or greater and 85° or less. In particular, the first row of nozzles, the second row of nozzles, and the third row of nozzles may be configured to spray steam plumes with different opening angles. The opening angle of the steam plume may be adjusted, for example, by a corresponding shaping shield 203.

[0079] Compared to the second primary evaporation direction M2, the stronger inclination of the first primary evaporation direction M1 relative to the substrate surface can result in a larger impact area of ​​the vapor plume ejected by the first row of nozzles 111 compared to the impact area of ​​the vapor plume ejected onto the substrate by the second row of nozzles 121. However, different impact regions may not be beneficial when depositing a mixed material layer onto the substrate. To avoid different impact regions regardless of different inclination angles, the second opening angle can be configured to be different from, and in particular larger than, the first opening angle. The impact regions of the first and second rows of nozzles on the substrate can be substantially overlapping by appropriately adjusting the opening angle. Therefore, the embodiments described herein can achieve a combination of overhanging angled deposition and co-deposition of a mixed material layer with a high overlap rate using a rotatable evaporation source. The opening angle of the vapor plume can be appropriately set, for example by a shaping shield 203 arranged in front of the vapor distribution conduit.

[0080] In some embodiments, the first material, the second material, and the third material are different materials, such as three different inorganic materials (e.g., metals) and / or three different organic materials. The first material, the second material, and the third material may optionally comprise the same components. For example, the first, second, and / or third material may comprise the same main component but different sub-components, such as different dopants. In other embodiments, the first material and the second material are the same material, but the third material is a different material. In still other embodiments, at least two of the first material, the second material, and the third material are the same material.

[0081] Figure 4 This is a schematic diagram of the vapor deposition source arrangement 100 according to the embodiments described herein in a horizontal cross section. Except for the configuration of the shaping shield, Figure 4 The arrangement of the vapor deposition source can be similar to or correspond to Figure 3 The arrangement of the vapor deposition source is as described above and will not be repeated here.

[0082] The vapor deposition source arrangement 100 includes a vapor deposition source 101 rotatable about a rotation axis R1. The vapor deposition source 101 includes a first vapor distribution conduit 110, a second vapor distribution conduit 120, and a third vapor distribution conduit 130. The first vapor distribution conduit 110 has a first row of nozzles 111 for depositing a first material onto a substrate, the second vapor distribution conduit 120 has a second row of nozzles 121 for depositing a second material onto the substrate, and the third vapor distribution conduit 130 has a third row of nozzles for depositing a third material onto the substrate. The first row of nozzles 111 and the second row of nozzles 121 are configured to deposit a mixed material layer onto the substrate 10 through co-deposition of the first and second materials. The third row of nozzles 131 is configured to deposit another layer containing a third material onto the substrate above or below the mixed material layer.

[0083] According to the embodiments described herein, the vapor deposition source 101 can be rotated about a rotation axis R1 to a first deposition position, in which the nozzle array is guided toward the substrate transport path T. The substrate 10 is transported through the vapor deposition source 101 held in the first deposition position, while a first material is guided toward the substrate from a first vapor distribution pipe, a second material is guided toward the substrate from a second vapor distribution pipe, and a third material is guided toward the substrate from a third vapor distribution pipe.

[0084] like Figure 4 The diagram schematically depicts a first vapor distribution pipe and a second vapor distribution pipe depositing a mixed material layer onto a substrate via co-deposition, while a third vapor distribution pipe deposits another layer onto the substrate below or above the mixed material layer, particularly below the mixed material layer.

[0085] Specifically, the first principal evaporation direction M1 of the first row of nozzles and the second principal evaporation direction M2 of the second row of nozzles may be tilted toward each other to co-deposit a mixed material layer, while the third principal evaporation direction M3 of the third row of nozzles is tilted "away" from the first and second principal evaporation directions to deposit another layer directly and continuously below or above the mixed material layer during substrate transport past the evaporation source. As used herein, "away" refers to the evaporation direction of the third row of nozzles, which is adapted to prevent the third material from overlapping with the first and second materials on the substrate (i.e., in the substrate plane defined by the substrate transport path T), so that another layer can be deposited below or above the mixed material layer.

[0086] Specifically, a first metal layer can be deposited onto the substrate using a third vapor distribution conduit 130, while a mixed metal layer is co-deposited onto the substrate over the first metal layer using a first vapor distribution conduit 110 and a second vapor distribution conduit 120 during substrate transport through the vapor deposition source. Specifically, the first metal layer can be an electron injection layer, particularly a ytterbium layer, and the mixed metal layer can be a cathode layer of an OLED layer stack, particularly comprising co-deposited silver (Ag) and magnesium (Mg). In some embodiments, the first material is silver, the second material is magnesium, and / or the third material is ytterbium. More specifically, the first vapor distribution conduit 110 is disposed between the second vapor distribution conduit 120 and the third vapor distribution conduit 130, and the first material is silver and / or the second material is magnesium. A first primary vapor deposition direction can be tilted relative to the surface normal of the substrate at the first deposition location, particularly tilted at an angle of 15° or greater, and more particularly tilted at an angle of 30° or greater, specifically to increase silver deposition in the region below the first overhang. Compared to the first principal evaporation direction, the second and third principal evaporation directions can be tilted to a lesser degree relative to the surface normal.

[0087] Alternatively, in some embodiments, the mixed organic layer may be co-deposited on the substrate above another organic layer along with the first vapor distribution conduit and the second vapor distribution conduit, the other organic layer being deposited simultaneously above or below the mixed organic layer along with the third vapor distribution conduit.

[0088] Optionally, the vapor deposition source may include a fourth vapor distribution conduit having a fourth row of nozzles having a fourth primary vapor deposition direction (not shown in the figure). The fourth vapor distribution conduit is capable of depositing another layer above or below other layers (if the fourth row of nozzles is away from the other rows of nozzles), or can be tilted toward a first primary vapor deposition direction to be capable of depositing a mixed material layer comprising at least three materials ejected from at least three vapor distribution conduits. Alternatively, the fourth primary vapor deposition direction may be tilted toward a third primary vapor deposition direction to enable the deposition of another mixed material layer from the third and fourth vapor distribution conduits via co-deposition. Thus, during the movement of the substrate past the vapor deposition source, two mixed 2-material layers may be deposited on the substrate, three layers comprising one mixed 2-material layer may be deposited on the substrate, or two layers comprising one mixed 3-material layer may be deposited on the substrate.

[0089] At least a subset of the following layers of an OLED layer stack can be deposited onto a substrate according to the method described herein: an anode layer, a HIL, one or more organic layers, an EIL, and a cathode layer.

[0090] like Figure 4 As schematically depicted herein, substrate 10 may have a structure formed thereon, the structure including a first sidewall 11 adjacent to pixel region 13 and a first overhang 12 projecting partially above pixel region 13 from the first sidewall 11. In some embodiments described herein, a first material is deposited by angled deposition to contact the first sidewall 11 below the first overhang 12. The first material may be a metal that is part of a cathode layer, more specifically silver.

[0091] Specifically, at the first deposition position, the first principal deposition direction M1 of the first row of nozzles is inclined at a first tilt angle of 15° or greater, particularly 30° or greater, relative to the surface normal of the substrate, and the third principal deposition direction M3 of the third row of nozzles is inclined at a third tilt angle less than the first tilt angle relative to the surface normal, or parallel to the surface normal. Different materials can be deposited to reach different positions below the first overhang 12, such as... Figure 7 The diagram is schematically depicted. For example, the cathode material may extend further below the overhang than the previously deposited EIL layer and / or the previously deposited organic layer.

[0092] Figure 4 The vapor deposition source arrangement 100 includes a shaping shield 201, and the shaping shield 201 and Figure 3The shaping shield 203 shown is configured differently. The shaping shield 201 is configured to limit the opening angle (thus laterally "shaping") of the steam plumes ejected in the horizontal cross-sectional plane by at least one of the first row of nozzles 111, the second row of nozzles 121, and the third row of nozzles 131. Specifically, the shaping shield 201 may be configured to limit the opening angle of the steam plumes ejected by the first, second, and third rows of nozzles. Specifically, the shaping shield 201 may be configured to prevent overlap between the steam plumes ejected from the first row of nozzles 111 and the third row of nozzles 131 in the plane of the substrate. Alternatively or additionally, the shaping shield 201 may be configured to ensure a high degree of overlap between the steam plumes ejected from the first row of nozzles 111 and the second row of nozzles 121 in the plane of the substrate.

[0093] In some embodiments, the vapor deposition source apparatus includes a shielding device 200 that partially surrounds the vapor deposition source 101 and includes an idle shielding element 202 and a shaping shielding element 201. A rotary driver is configured to rotate the vapor deposition source 101 relative to the shielding device 200 between an idle position and a first deposition position. In the idle position, a first row of nozzles, a second row of nozzles, and a third row of nozzles point towards the idle shielding element 202. In the first deposition position, at least one of the first row of nozzles, the second row of nozzles, and the third row of nozzles faces the idle shielding element 202. The third row of nozzles is aligned with one or more openings provided in the shaping shielding element 201. The one or more openings provided in the shaping shielding element 201 may be configured as one or more vertical slit openings.

[0094] For example, such as Figure 4 As schematically depicted, the third row of nozzles 131 can be aligned with corresponding slits provided in the shaping shield 201, particularly with vertical slits at least as long as the third row of nozzles. Alternatively or additionally, the first row of nozzles can be aligned with corresponding slits provided in the shaping shield 201 and / or the second row of nozzles can be aligned with corresponding slits provided in the shaping shield 201. Optionally, a common slit aligned with the first and second rows of nozzles can be provided in the shaping shield 201.

[0095] In some embodiments, the height of the vapor deposition source 101 and the shielding arrangement 200 is 150 cm or higher, particularly 200 cm or higher, and the inner shielding surface of the shielding arrangement 200 facing the vapor deposition source can be 1 m. 2 Or higher, especially 2m 2 Or higher.

[0096] The idler shield 202 can be cylindrical or tubular, surrounding the vapor deposition source at an angle of 90° to 270°, such that rotation of the vapor deposition source about the rotation axis R1 causes the nozzle array to move across the inner surface of the idler shield. The curvature of the idler shield can be adapted to the curvature of the movement trajectory of the nozzle array during source rotation.

[0097] The shaping shield 201 and the idle shield 202 can be connected to each other in the circumferential direction to provide a continuous shielding interface between them. In other words, the shielding device 200 can be configured such that the evaporation source is in a first deposition position and an idle position (e.g., ... Figure 5 During rotation between the sources (as shown), the first, second, and third materials ejected by the vapor deposition source 101 can only escape from the shielding device 200 through the (vertical) slits provided in the shaping shield 201. During the rotation of the source around the rotation axis, stray coatings on other surfaces in the vacuum deposition system can be reduced or avoided.

[0098] Optionally, in Figure 4 After coating the substrate at the first deposition position shown, the vapor deposition source 101 can be rotated about the rotation axis R1 to a second deposition position different from the first deposition position. At the second deposition position, the third row of nozzles can be guided toward the idle shield 202, and the first and second rows of nozzles can be guided toward the substrate transport path T, optionally through an opening in the shaping shield. The substrate can then be transported a second time through the vapor deposition source to co-deposit a second mixed material layer containing the first and second materials on top of the (first) mixed material layer. The second mixed material layer can be a second mixed metal layer, particularly a second sublayer of the cathode layer. Therefore, the vapor deposition source arranged at the second deposition position can be used to coat the substrate moving through the vapor deposition source (only) with the mixed material layer using the first and second vapor distribution channels, while the third row of nozzles is guided toward the idle shield. Furthermore, the vapor deposition source arranged at the first deposition position can be used to coat the substrate moving through the vapor deposition source with both the mixed material layer and another layer above or below the mixed material layer. The other layer can be, for example, an electron injection layer, and the (first) mixed material layer (and optionally the second mixed layer) can be, for example, a sublayer of the cathode layer.

[0099] Figure 5 The vapor deposition source 101 is shown after being rotated to the idle position, with the nozzle array pointing towards the inner shielding surface of the idle shield 202. The vapor deposition source 101 can remain in the idle position until the substrate is arranged in front of the vapor deposition source, at which point the vapor deposition source can be rotated back to the first (or second) deposition position.

[0100] Figure 6A and Figure 6B This is a schematic diagram of a vapor deposition source arrangement 600 according to the embodiments described herein in a horizontal cross-section, wherein the baffle 610 has two different configurations. Besides the baffle 610, Figure 6A and Figure 6B The vapor deposition source arrangement 600 can be similar to or correspond to Figure 3 or Figure 4 The arrangement of the vapor deposition source is as described above and will not be repeated here.

[0101] The vapor deposition source arrangement 600 includes a vapor deposition source 101 rotatable about a rotation axis. A first vapor distribution conduit 110, a second vapor distribution conduit 120, and a third vapor distribution conduit 130, as described herein, are mounted at the vapor deposition source 101. The first and second vapor distribution conduits are configured to deposit a mixed material layer onto the substrate via co-deposition, while the third vapor distribution conduit deposits another layer onto the substrate above or below the mixed material layer.

[0102] Optionally, the idle shield 202 as described herein may partially surround the vapor deposition source 101, allowing the vapor deposition source to rotate to an idle position. Optionally, a shaping shield as described herein may be provided, configured to restrict vapor plumes ejected from one or more nozzle rows in a horizontal cross-sectional plane. The shaping shield may be mounted at the vapor deposition source to rotate with the vapor deposition source, such as... Figure 3 As shown, or it can be stationary relative to the rotation of the vapor deposition source, for example, by attaching a shaping shield to an idle shroud to provide, as Figure 4 and Figure 5 The continuous shield arrangement is shown.

[0103] In some embodiments that can be combined with other embodiments described herein, the vapor deposition source arrangement 600 further includes a baffle 610 movably mounted at the vapor deposition source 101, wherein the baffle is movable between different baffle positions. For example, as Figure 6A and Figure 6B As shown schematically, the baffle 610 is rotatably mounted at the vapor deposition source 101.

[0104] exist Figure 6B The first baffle position (“unlocked position”) is exemplarily depicted by dashed lines. In the first baffle position, the vapor paths of the first, second, and third rows of nozzles are unobstructed, allowing a first material to be guided onto the substrate from the first row of nozzles, a second material to be guided onto the substrate from the second row of nozzles, and a third material to be guided onto the substrate from the third row of nozzles when the vapor deposition source is positioned in the first deposition position. The first baffle position is provided during normal operation of the vapor deposition source, particularly for the simultaneous deposition of a substrate having a mixed material layer and another layer as described herein.

[0105] Figure 6AThe location of the second baffle is depicted. At the second baffle location, the vapor paths of the first and second rows of nozzles are blocked by the baffle body or baffle wall, while the vapor path of the third row of nozzles is unblocked, allowing the substrate to be coated with a third material. For example, the opening 611 in the baffle body can be aligned with the third row of nozzles, and the baffle body can be directly positioned in front of the first and second rows of nozzles, such as... Figure 6A As shown. At the second baffle position, when the vapor deposition source is positioned at the first deposition position, only the third material is guided from the vapor deposition source onto the substrate or test substrate. The second baffle position can be provided, for example, for testing or inspecting the material deposition provided by the third vapor distribution conduit, such as for inspecting the layer quality of another layer or for aligning the third row of nozzles.

[0106] exist Figure 6B The location of the third baffle is depicted. In this third baffle position, the steam paths of the first and second rows of nozzles are unobstructed, while the steam path of the third row of nozzles is blocked by the baffle body. For example, the opening 611 in the baffle body can be aligned with the first and second rows of nozzles, and the baffle body can be directly positioned in front of the third row of nozzles. Figure 6B As shown. At the third baffle position, when the vapor deposition source is positioned at the first deposition position, the first and second materials are guided from the vapor deposition source onto the substrate or test substrate, but the third material is not guided onto the substrate or test substrate. The third baffle position can be provided, for example, for testing or inspecting the co-deposition of materials supplied by the first and second vapor distribution pipes, such as for inspecting the layer quality of the mixed material layer or for aligning the first and second rows of nozzles.

[0107] Optionally, one or more additional baffle positions may be possible. For example, in an optional fourth baffle position (not shown in the figure), only the first row of nozzles is unobstructed, while the other rows of nozzles are blocked, such that only the first material is guided onto the substrate, and the remaining rows of nozzles are blocked by the baffle body. In an optional fifth baffle position, only the second row of nozzles is unobstructed, while the other rows of nozzles are blocked, such that only the second material is guided onto the substrate. The deposition quality of the first and / or second materials on the substrate can be tested or inspected, for example, individually or in combination.

[0108] In particular, in some embodiments, the baffle 610 includes a baffle body rotatably mounted at the vapor deposition source, the baffle body having an opening 611, particularly a vertical slit, wherein the opening 611 is at a second baffle position ( Figure 6A Aligned with the third row of nozzles in the diagram, and at the third baffle position (as shown). Figure 6B (as shown in the diagram) Aligned with the first row of nozzles and the second row of nozzles.

[0109] Baffles 610, which can be positioned at different locations relative to the vapor distribution pipe, allow for the testing or inspection of individual layers and / or individual materials that can be deposited onto a substrate using a vapor deposition source. Baffles 610 can be mounted at the vapor deposition source so that they rotate together with the vapor deposition source as the source rotates about its axis of rotation.

[0110] Therefore, in view of the embodiments described herein, improved evaporation source arrangements and improved coating methods are provided, particularly for “maskless” OLED pixel deposition in which multiple layers of OLED layer stacks are deposited at an angle below the overhang rather than using a fine metal mask.

[0111] While the foregoing describes embodiments of this disclosure, other and further embodiments of this disclosure may be designed without departing from the basic scope of this disclosure, and the scope of this disclosure is defined by the appended claims.

[0112] In particular, this written description uses examples to disclose the contents of this disclosure, including best practices, and also enables any person skilled in the art to practice the described subject matter, including making and using any apparatus or system and performing any combined methods. While various specific embodiments have been disclosed above, the mutually non-exclusive features of the embodiments described above can be combined with each other. The scope of patent protection is defined by the claims, and other examples are intended to be within the scope of the claims if the claims have structural elements that are not different from the literal language of the claims, or if the claims include equivalent structural elements that are not substantially different from the literal language of the claims.

Claims

1. A vapor deposition source arrangement (100, 600) for depositing at least two layers onto a substrate, comprising: The vapor deposition source (101) includes: A first vapor distribution conduit (110) has a first row of nozzles (111) having a first main vapor deposition direction (M1) for depositing a first material onto the substrate; A second vapor distribution conduit (120) has a second row of nozzles (121) having a second main vapor deposition direction (M2) for depositing a second material onto the substrate; and A third vapor distribution conduit (130) has a third row of nozzles (131) having a third main vapor deposition direction (M3) for depositing a third material onto the substrate; and A rotary driver (113) is used to rotate the vapor deposition source about a rotation axis. The first principal evaporation direction (M1) and the second principal evaporation direction (M2) are inclined towards each other to enable the co-deposition of the mixed material layer onto the substrate, and The third row of nozzles (131) is configured to deposit another layer containing the third material onto the substrate above or below the mixed material layer.

2. The vapor deposition source arrangement as claimed in claim 1, wherein the first principal vapor deposition direction (M1) and the third principal vapor deposition direction (M3) are inclined away from each other so that the other layer can be deposited above or below the hybrid material layer.

3. The vapor deposition source arrangement as claimed in claim 1 or 2, wherein the vapor deposition source (101) is a metal source, the metal source being configured to deposit a first metal layer and to co-deposit a mixed metal layer above or below the first metal layer.

4. The vapor deposition source arrangement as claimed in any one of claims 1 to 3, wherein the vapor deposition source is configured to deposit an electron injection layer comprising the third material and a cathode layer comprising the first material and the second material co-deposited over the electron injection layer.

5. The vapor deposition source arrangement as described in claim 1 or 2, wherein the vapor deposition source is an organic source, the organic source being configured to deposit a first organic layer and to co-deposit a mixed organic layer above or below the first organic layer.

6. The vapor deposition source arrangement as claimed in any one of claims 1 to 5, further comprising shaping shields (201, 203) for reducing or preventing overlap between the vapor plume ejected from the first row of nozzles (111) and the vapor plume ejected from the third row of nozzles (131).

7. The vapor deposition source arrangement as claimed in any one of claims 1 to 6, further comprising an idle shield (202) partially surrounding the vapor deposition source, the rotary driver being configured to rotate the vapor deposition source relative to the idle shield (202) to an idle position, wherein the first row of nozzles, the second row of nozzles and the third row of nozzles point toward the idle shield.

8. The vapor deposition source arrangement as claimed in any one of claims 1 to 7, comprising a shielding arrangement (200) partially surrounding the vapor deposition source and including an idle shielding element (202) and a shaping shielding element (201), the rotary driver being configured to rotate the vapor deposition source relative to the shielding arrangement between an idle position and a first deposition position, wherein in the idle position the first row of nozzles, the second row of nozzles, and the third row of nozzles are directed toward the idle shielding element (202), and in the first deposition position at least one of the first row of nozzles, the second row of nozzles, and the third row of nozzles is aligned with one or more slits located in the shaping shielding element (201).

9. The vapor deposition source arrangement as claimed in any one of claims 1 to 8, further comprising a baffle (610) movably mounted at the vapor deposition source, the baffle being movable between at least the following baffle positions: At the first baffle position, the steam paths of the first row of nozzles, the second row of nozzles, and the third row of nozzles are not blocked. At the second baffle position, the steam paths of the first row of nozzles and the second row of nozzles are blocked, while the steam path of the third row of nozzles is not blocked. as well as At the third baffle position, the steam paths of the first row of nozzles and the second row of nozzles are not blocked, but the steam path of the third row of nozzles is blocked.

10. The vapor deposition source arrangement as claimed in claim 9, wherein the baffle (610) includes a baffle body rotatably mounted at the vapor deposition source, the baffle body having a baffle opening (611) aligned with the third row of nozzles at the second baffle position, and aligned with the first row of nozzles and the second row of nozzles at the third baffle position.

11. The vapor deposition source arrangement as claimed in any one of claims 1 to 10, wherein the first row of nozzles, the second row of nozzles, and the third row of nozzles each comprise twenty or more nozzles, the twenty or more nozzles being arranged in a substantially vertical nozzle array one above the other, and the first vapor distribution conduit, the second vapor distribution conduit, and the third vapor distribution conduit being configured as vertical sources, the vertical sources being arranged adjacent to each other on a common rotatable source body of the vapor deposition sources.

12. The vapor deposition source arrangement as claimed in any one of claims 1 to 11, wherein the first row of nozzles is configured to spray a vapor plume having a first opening angle, and the second row of nozzles is configured to spray a vapor plume having a second opening angle greater than the first opening angle, particularly wherein, in a horizontal cross-section, the first opening angle is 40° or greater and 60° or less, and the second opening angle is 60° or greater and 85° or less.

13. The vapor deposition source arrangement as claimed in any one of claims 1 to 12, further comprising a controller (114) configured to rotate the vapor deposition source to a first deposition position before transporting the substrate past the vapor deposition source, wherein, At the first deposition location, at least the first primary evaporation direction is tilted at a first tilt angle of 15° or greater relative to the surface normal of the substrate.

14. A vacuum deposition system, comprising: First vacuum chamber (1001); According to any one of claims 1 to 13, the vapor deposition source arrangement (100) is in the first vacuum chamber; The substrate transport track (1013) is configured to move the substrate (10) along the substrate transport path (T) past the vapor deposition source arrangement; as well as A shielding transport track (1012) is located between the substrate transport track and the vapor deposition source arrangement (100) and is configured to move a movable shielding element (1030) in front of the substrate (10) to shield the edge region of the substrate.

15. A method for coating a substrate in a vacuum chamber using a vapor deposition source, the vapor deposition source comprising a first vapor distribution conduit (110) having a first row of nozzles, a second vapor distribution conduit (120) having a second row of nozzles, and a third vapor distribution conduit (130) having a third row of nozzles, the method comprising: The vapor deposition source (101) is rotated about the rotation axis (R1) to the first deposition position; as well as At the first deposition location, the substrate is transported along the substrate transport path (T) past the vapor deposition source (101), while a first material is guided toward the substrate from the first vapor distribution pipe, a second material is guided toward the substrate from the second vapor distribution pipe, and a third material is guided toward the substrate from the third vapor distribution pipe. The first and second vapor distribution pipes deposit a mixed material layer onto the substrate via co-deposition, while the third vapor distribution pipe deposits another layer onto the substrate below or above the mixed material layer.

16. The method of claim 15, wherein the first principal evaporation direction (M1) of the first row of nozzles and the second principal evaporation direction of the second row of nozzles are inclined toward each other to co-deposit the mixed material layer, and the third principal evaporation direction (M3) of the third row of nozzles is inclined away from the first principal evaporation direction and the second principal evaporation direction to deposit the other layer below or above the mixed material layer.

17. The method according to claim 15 or 16, wherein the shaping shield (201, 203) is arranged in front of the first row of nozzles, the second row of nozzles and the third row of nozzles to limit the vapor plume ejected by the first row of nozzles, the second row of nozzles and / or the third row of nozzles, in particular to prevent or reduce the overlap between the vapor plume ejected by the first row of nozzles and the vapor plume ejected by the third row of nozzles.

18. The method of any one of claims 15 to 17, wherein the first metal layer is deposited onto the substrate using the third vapor distribution conduit, and a mixed metal layer is co-deposited onto the substrate over the first metal layer using the first vapor distribution conduit and the second vapor distribution conduit during transport of the substrate through the vapor deposition source (101).

19. The method of claim 18, wherein the first metal layer is an electron injection layer, and the mixed metal layer is a cathode layer of an OLED layer stack.

20. The method of any one of claims 15 to 19, wherein the substrate has a structure formed thereon, the structure including a first sidewall (11) adjacent to the pixel region (13) and a first overhang (12) extending from the first sidewall (11), wherein at least the first material is deposited by angled deposition to contact the first sidewall below the first overhang.

21. The method according to any one of claims 15 to 20, wherein, At the first deposition location, the first principal evaporation direction (M1) of the first row of nozzles is inclined at a first tilt angle (α1) of 15° or greater relative to the surface normal of the substrate, and the third principal evaporation direction (M3) of the third row of nozzles is inclined at a third tilt angle less than the first tilt angle relative to the surface normal, or is parallel to the surface normal.

22. The method of any one of claims 15 to 21, further comprising: The vapor deposition source (101) is rotated about the rotation axis to a second deposition position, in which the third row of nozzles points to the idle shield, and the first row of nozzles and the second row of nozzles point to the substrate transport path (T); as well as The substrate is transported a second time through the vapor deposition source to co-deposit a second hybrid material layer on the hybrid material layer.

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